CN206432271U - Solar energy is without main gate line crystal-silicon battery slice - Google Patents

Solar energy is without main gate line crystal-silicon battery slice Download PDF

Info

Publication number
CN206432271U
CN206432271U CN201621478306.9U CN201621478306U CN206432271U CN 206432271 U CN206432271 U CN 206432271U CN 201621478306 U CN201621478306 U CN 201621478306U CN 206432271 U CN206432271 U CN 206432271U
Authority
CN
China
Prior art keywords
grid line
thin grid
rectangle
cell piece
main gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201621478306.9U
Other languages
Chinese (zh)
Inventor
胡志刚
熊华平
牛海燕
四建方
罗学涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Raysolar New Energy Co Ltd
Original Assignee
Qingdao Raysolar New Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Raysolar New Energy Co Ltd filed Critical Qingdao Raysolar New Energy Co Ltd
Priority to CN201621478306.9U priority Critical patent/CN206432271U/en
Application granted granted Critical
Publication of CN206432271U publication Critical patent/CN206432271U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The purpose of this utility model is to provide a kind of based on prior art device, on the premise of largely equipment and technique is not changed, reduces production cost and improve the solar energy of generated energy without main gate line crystal-silicon battery slice.Including cell piece, thin grid line and backplate, laterally gather thin grid line in the front of cell piece, the back side is provided with the aluminium back of the body and array is provided with backplate, also include the thin grid line of thickening and welding enhancing point, the two ends of the vertical direction of the thin grid line of cell piece are provided with the thin grid line termination of rectangle, the thin grid line of thickening perpendicular to thin grid line is provided between the thin grid line termination of rectangle, welding enhancing point is interval between the thin grid line termination of rectangle and the thin grid line of thickening.The utility model is outside the basic function for ensureing solar energy crystal-silicon battery slice, cost is reduced, generated energy is improved, there is directive significance for whole solar cell board industry, the progress in China's solar panel field has been promoted significantly, with good market promotion prospect.

Description

Solar energy is without main gate line crystal-silicon battery slice
Technical field
The utility model belongs to field of new energy technologies, more particularly to solar energy, specifically a kind of solar energy dereliction Grid line crystal-silicon battery slice.
Background technology
Global fossil energy crisis has promoted the fast development of photovoltaic industry with environmental pollution.At present, with crystal silicon electricity Component based on the piece of pond occupies more than the 80% of global photovoltaic module market;Crystal-silicon battery slice is developed so far, its cost of manufacture And generated energy turns into the main restricting factor of its development.In terms of cost of manufacture, silicon materials in occupation of about 60-70% material into Originally, material cost of the consumption of silver paste in occupation of about 15-25%;So the cost of high-purity crystal silicon material and its usage amount, with And the usage amount of silver paste all has significant effect to the cost of cell piece or component.In terms of generated energy, it is mainly by the sun The influence of the energy effective illuminating area of cell piece and photoelectric transformation efficiency;The photoelectric transformation efficiency heavy dependence crystal silicon material of cell piece The structure of material, effective illuminating area of cell piece itself is to depend on cell piece master, the area coverage of thin grid line.
The generating matrix of crystal-silicon battery slice is silicon chip, conventional cell piece be printed on the thin grid line of many bars to collect silicon chip by The electric current produced after to illumination, and 2-5 bars main gate line is also printed on to collect the electric current on thin grid line.In low cost, high generating Under the urgency for measuring this target of cell piece, dereliction grid line cell chip technology arises at the historic moment.Dereliction grid line cell piece, generally referred to as On the basis of conventional batteries piece, remove main gate line and retain thin grid line;This cell piece, on the one hand can be significantly because without main gate line The usage amount of silver paste is reduced, can additionally increase effective illuminating area of cell piece.
On dereliction grid line cell chip technology, there are many methods at present and to enumerate part case as follows.
1. German Schmid removes the main gate line of cell piece without main gate line technology, and width thin grid line and Away from some adjustment have been done, common welding additionally is replaced come Series connection welding polylith cell piece with 15 copper wires.
2. Canadian Day4Electrode patented technologies remove the main gate line of cell piece and retain thin grid line, afterwards It is covered on thin grid, then copper wire and thin grid is welded with the film for being embedded with row plating low-melting-point metal copper wire by laminating technology Come.
3. Lin Jianwei《Without main grid, high efficiency back contact solar module, component and preparation technology》[the patent No.:CN 104282788A] in mention, the main gate line of cell piece is removed the series connection point of cell piece is positioned over the cell piece back side simultaneously, this The method of kind will further improve effective illuminating area of cell piece.
4. it is yellow strong《Photovoltaic battery module and preparation method thereof》[the patent No.:The A of CN 104716213] in mention, electricity The main gate line of pond piece removes and retains thin grid line, while replacing common welding with conductive tape come Series connection welding cell piece.
5. publication No. is authorized in CN201820762U patents, it is proposed that a kind of technical scheme without main gate line completely, Only retain thin grid line.
6. there is provided a kind of skill that main gate line is substituted using some weldings and some conductive tapes in CN103618011A patents Art scheme.
It is right but these prior arts all have ignored an objective fact, that is, existing equipment and known technology Above-mentioned technical proposal can not realize volume production, if using above-mentioned technical proposal, need large area to change production equipment, also, Change or improve crystal silicon battery chip architecture come reduce cell piece cost and improve cell piece generated energy, these methods typically have or Complex process, cost is high, or technique is not yet ripe, it is impossible to obtain for example above-mentioned patent of high volume applications 3..And change photovoltaic module The material of production, will bring substantial amounts of work to adjust, such as matching problem and equipment between the research and development of material, new material Update, 2., 4. this undoubtedly add for example above-mentioned patent of component production cost.For similar to patent 1. without main gate line Battery chip technology, although do not change battery chip architecture and existing component production technology, but pass through our substantial amounts of realities Checking, it is found that the adhesive force between copper wire and thin grid is too small, the electricity at its welding of battery film in the test of TC cycle reliabilities Connection is learned to be deteriorated, and easily there is rosin joint and disconnected grid phenomenon (as shown in accompanying drawing 6-7), square frame in the welding position at cell piece two ends It is rosin joint and disconnected grid phenomenon to iris out part.Similar to prior art 5. 6., that it changes the whole of existing solar battery sheet Production technology, therefore, does not have the possibility of volume production.
How on the basis of original component production technology is kept, the front electrode of cell piece is changed on a small quantity, significantly Cell piece and component production cost are reduced, and improves the generated energy of monolithic battery piece.Be current solar battery sheet field urgently The problem of must solving.
The content of the invention
The purpose of this utility model be to provide it is a kind of be based on prior art device, in not largely modification equipment and technique Under the premise of, the solar energy of reduction production cost and raising generated energy is without main gate line crystal-silicon battery slice.
In order to achieve the above object, the technical solution adopted in the utility model is:A kind of solar energy is without main gate line crystal silicon electricity Pond piece, including cell piece, thin grid line and backplate, the horizontal thin grid line that gathers in the front of cell piece, the back side is provided with the aluminium back of the body and battle array Row are provided with backplate, in addition to the thin grid line of thickening and welding enhancing point, and the two ends of the vertical direction of the thin grid line of cell piece are provided with The thin grid line of thickening perpendicular to thin grid line, the thin grid line end of rectangle are provided between the thin grid line termination of rectangle, the thin grid line termination of rectangle Welding enhancing point is interval between head and the thin grid line of thickening.
The utility model removes main gate line, takes the thin grid line of overstriking and welding enhancing point, and use rectangle in end The mode of thin grid line termination, the thin grid line termination of rectangle, the thin grid line of overstriking and welding enhancing band point, ensure that and removing main gate line Afterwards, cell piece remains to normal work, so as to reduce because the high cost that main gate line silver consuming amount is brought greatly.
Simultaneously as main gate line is wider, remove after main gate line, the cell piece part blocked originally by it also assists in hair Electricity, therefore generated energy has 1%-2% lifting, it is significant.
The rectangle that the thin grid line termination of rectangle is surrounded by thin grid line, its long * is wide=4mm*3m, thin grid line is conventional thin grid line, Size is 0.036mm.
The thin grid line width of thickening is 2-3 times of conventional thin grid line.
The problem of thin grid line of vertical overstriking can preferably solve EL images, IV curves test percent of pass, the thin grid line of rectangle Termination, the thin grid line of overstriking and welding enhancing band point help to solve the problems, such as two ends rosin joint in welding process, disconnected grid, vertical thin grid Line can solve the problems, such as the rosin joint of TC agings, disconnected grid.
The mode one of addition welding enhancing point:Welding enhancing point is extended inward from the thin grid line termination of rectangle, welding enhancing The size 0.6mm*0.6mm of point, quantity is 7, and the distance between welding enhancing point is 2-4mm.
The mode two of addition welding enhancing point:Welding enhancing point is extended inward from the thin grid line termination of rectangle, and size is by big To small, spacing is ascending, and the dimensions of welding enhancing point is 1.1*1.1mm, minimum 0.4*0.4mm to the maximum, and quantity is 7 Individual, spacing is followed successively by 1mm, 1mm, 2mm, 3mm, 4mm, 5mm.
The thin grid line of thickening is 4 or 5.The setting of the thin grid line termination of corresponding rectangle and welding enhancing point is also 4 or 5 It is individual.
Conventional crystal silicon solar batteries piece it is main by:Light is converted into the conduction of electric high-purity crystal silicon material, collected current Material includes positive main gate line, the silver electrode of thin grid line and the back side, aluminium backboard, according to current cell piece material cost meter Calculate, silicon materials account for 60-70%, and silver-colored consumption accounts for 15-25%;And silver usage amount in terms of on, the silver amount of front electrode Relatively good, backplate quality is not as the fine silver in front, generally front, the silver-aluminium alloy at the back side.
According to the related experiment carried out as foundation, other performance of the present utility model reaches that prior art is equal Level, the design based on this cell piece, we both ensure that the generating effect and reliability of cell piece and component, reduce cell piece Cost and improve its generated energy.Wherein, the removal of main gate line can reduce 50%-the 70% of front side silver paste usage amount, can drop 10%-the 21% of the cost of low cell piece;Illustrated with more intuitive data, calculated by 10 megawatts of photovoltaic plant of generated energy, Nearly 230-380 ten thousand yuans of material cost can be saved.In addition, in terms of generated energy, the removal and cooperation of main gate line are special The use of welding, it can increase 1%-the 2% of generating efficiency;Illustrated with more intuitive data, using generated energy as 10 megawatts of light Overhead utility is calculated, and annual electricity generating capacity can at least increase by 30-60MW.
The utility model is in actual production process, it is only necessary to can be produced the progress transformation of printed portions half tone, Original production technology is not changed, will not increase production cost.
The connected mode of polylith cell piece, which remains unchanged, uses Series connection welding, without changing welding material and need not change component Production technology and equipment.
Therefore the utility model reduces cost, improves hair outside the basic function for ensureing solar energy crystal-silicon battery slice Electricity, has directive significance for whole solar cell board industry, entering for China's solar panel field has been promoted significantly Step, with good market promotion prospect.
Brief description of the drawings
Fig. 1 the utility model positive structure schematics;
Fig. 2 is A portions partial enlargement structural representation in Fig. 1;
Fig. 3 the utility model structure schematic diagrams;
The positive structure schematic of Fig. 4 the utility model embodiment 2;
Fig. 5 is Fig. 4 partial enlargement structural representations;
Fig. 6 prior arts are directly removed after main gate line, rosin joint, the disconnected grid problem figure produced in welding process;
Fig. 7 prior arts are directly removed after main gate line, rosin joint, the disconnected grid problem figure produced in TC Thermal Cyclings.
In figure:The thin grid line termination of 1 rectangle;The thin grid line of 2 overstrikings;3 welding enhancing points;4 cell pieces;5 backplates;6 aluminium are carried on the back.
Embodiment
The utility model is further described below in conjunction with the accompanying drawings.
Embodiment 1
As Figure 1-3
A kind of solar energy without main gate line crystal-silicon battery slice, including cell piece 4, thin grid line and backplate 5, cell piece 4 The positive thin grid line that laterally gathers, the back side is provided with the aluminium back of the body 6 and array is provided with backplate 5, in addition to the thin grid line 2 of thickening and welding increase Strong point 3, the two ends of the vertical direction of the thin grid line of cell piece 4 are provided with the thin grid line termination 1 of rectangle, the thin grid line termination 1 of rectangle it Between be provided with perpendicular to thin grid line the thin grid line 2 of thickening, be interval with welding between the thin grid line termination 1 of rectangle and the thin grid line 2 of thickening Enhancing point 3.
The rectangle that the thin grid line termination 1 of rectangle is surrounded by thin grid line, its long * is wide=4mm*3mm, and thin grid line width is 0.036mm。
The thin width of grid line 2 of thickening is 2-3 times of conventional thin grid line.
Welding enhancing point is extended inward from the thin grid line termination of rectangle, the size 0.6mm*0.6mm of welding enhancing point, quantity For 7, the distance between welding enhancing point is 2-4mm.
The thin grid line 2 of thickening is 4 or 5.
Embodiment 2
As illustrated in figures 4-5
Welding enhancing point is extended inward from the thin grid line termination of rectangle, and size is descending, and spacing is ascending, and welding increases The dimensions of strong point is 1.1*1.1mm to the maximum, minimum 0.4*0.4mm, and quantity is 7, spacing be followed successively by 1mm, 1mm, 2mm、 3mm、4mm、5mm。
Other be the same as Examples 1.
According to the related experiment carried out as foundation, the other performance of this cell piece reaches the equal water of prior art It is flat, the design based on this cell piece, we both ensure that the generating effect and reliability of cell piece and component, reduction cell piece Cost and improve its generated energy.Wherein, the removal of main gate line can reduce 50%-the 70% of front side silver paste usage amount, it is possible to decrease 10%-the 21% of the cost of cell piece;Illustrated with more intuitive data, calculated by 10 megawatts of photovoltaic plant of generated energy, can To save nearly 230-380 ten thousand yuans of material cost.In addition, in terms of generated energy, the removal and the special weldering of cooperation of main gate line The use of band, it can increase 1%-the 2% of generating efficiency;Illustrated with more intuitive data, using generated energy as 10 megawatts of photovoltaic Power station is calculated, and annual electricity generating capacity can at least increase by 30-60MW.
Certainly, the above is only preferred embodiment of the present utility model, it is impossible to be considered as being used to limit to utility model Scope of embodiments.The utility model is also not limited to the example above, and those skilled in the art are in this practicality The equivalent change made in new essential scope and improvement etc., all should belong to the utility model patent covering scope.

Claims (6)

1. a kind of solar energy is without main gate line crystal-silicon battery slice, including cell piece(4), thin grid line and backplate(5), cell piece (4)Front laterally gather thin grid line, the back side provided with aluminium the back of the body(6)And array is provided with backplate(5), it is characterised in that:Also wrap Include the thin grid line of thickening(2)With welding enhancing point(3), cell piece(4)Thin grid line vertical direction two ends be provided with the thin grid of rectangle End(1), the thin grid line termination of rectangle(1)Between be provided with perpendicular to thin grid line the thin grid line of thickening(2), the thin grid line end of rectangle Head(1)With the thin grid line of thickening(2)Between be interval with welding enhancing point(3).
2. solar energy according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that:The thin grid line termination of rectangle (1)The rectangle surrounded by thin grid line, its long * is wide=4mm*3mm, thin grid line width is 0.036mm.
3. solar energy according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that:The thin grid line of thickening(2)It is wide Spend for 2-3 times of conventional thin grid line.
4. solar energy according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that:Welding enhancing point(3)From The thin grid line termination of rectangle is extended inward, the size 0.6mm*0.6mm of welding enhancing point, and quantity is 7, between welding enhancing point Distance be 2-4mm.
5. solar energy according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that:Welding enhancing point(3)From The thin grid line termination of rectangle is extended inward, and size is descending, and spacing is ascending, and the dimensions of welding enhancing point is maximum For 1.1*1.1mm, minimum 0.4*0.4mm, quantity is 7, welding enhancing point(3)Spacing be followed successively by 1 mm, 1 mm, 2 mm、3 mm、4 mm、5mm。
6. solar energy according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that:The thin grid line of thickening(2)For 4 Bar or 5.
CN201621478306.9U 2016-12-30 2016-12-30 Solar energy is without main gate line crystal-silicon battery slice Expired - Fee Related CN206432271U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201621478306.9U CN206432271U (en) 2016-12-30 2016-12-30 Solar energy is without main gate line crystal-silicon battery slice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201621478306.9U CN206432271U (en) 2016-12-30 2016-12-30 Solar energy is without main gate line crystal-silicon battery slice

Publications (1)

Publication Number Publication Date
CN206432271U true CN206432271U (en) 2017-08-22

Family

ID=59585535

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201621478306.9U Expired - Fee Related CN206432271U (en) 2016-12-30 2016-12-30 Solar energy is without main gate line crystal-silicon battery slice

Country Status (1)

Country Link
CN (1) CN206432271U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238985A (en) * 2023-11-16 2023-12-15 浙江晶科能源有限公司 Solar cell and photovoltaic module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238985A (en) * 2023-11-16 2023-12-15 浙江晶科能源有限公司 Solar cell and photovoltaic module

Similar Documents

Publication Publication Date Title
CN101609848B (en) Front and back surface electrodes of screen printing crystalline silicon solar cell and manufacturing method thereof
CN205985031U (en) High -efficient solar energy does not have main grid line crystal silicon battery piece
CN102779861B (en) Electrode structure with grid lines on front surface
CN202142542U (en) X type positive electrode structure used for solar battery
CN102738302A (en) Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell
CN201796897U (en) Front contact structure of crystalline silicon solar cell
CN206432271U (en) Solar energy is without main gate line crystal-silicon battery slice
CN206471338U (en) Cleavable solar energy is without main gate line crystal-silicon battery slice
CN206401326U (en) Solar energy is without main gate line crystal-silicon battery slice
CN205248287U (en) No main grid battery pack
CN206727078U (en) Efficient dereliction grid cell piece solar components
CN103545386A (en) Solar cell electrode shape
CN206401334U (en) It is cleavable without main grid crystal-silicon battery slice solar components
CN204303822U (en) A kind of crystal silicon solar cell sheet
CN107895748A (en) High-efficiency solar is without main grid crystal-silicon battery slice
CN203055923U (en) Solar cell front face grid line and solar cell sheet printed with same
CN206441743U (en) The solar energy that strengthening electric current is collected is without main gate line crystal-silicon battery slice
CN205609534U (en) Highlight high photoelectric conversion rate anti -aging solar wafer that shows up
CN206516646U (en) Strengthen the dereliction grid cell piece solar components of welding effect
CN205081126U (en) Solar cell's grid line electrode structure
CN206349375U (en) Solar energy is without main gate line crystal-silicon battery slice
CN206727079U (en) Dereliction grid cell piece solar components
CN201112391Y (en) Electrode of solar energy battery
CN206332036U (en) Without main grid crystal-silicon battery slice solar components
CN203277402U (en) Solar cell light receiving face grate line

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170822

Termination date: 20201230

CF01 Termination of patent right due to non-payment of annual fee