CN204324890U - A kind of equipment preparing Graphene at ambient pressure continuously fast - Google Patents
A kind of equipment preparing Graphene at ambient pressure continuously fast Download PDFInfo
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- CN204324890U CN204324890U CN201420786372.7U CN201420786372U CN204324890U CN 204324890 U CN204324890 U CN 204324890U CN 201420786372 U CN201420786372 U CN 201420786372U CN 204324890 U CN204324890 U CN 204324890U
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Abstract
The utility model relates to Graphene and manufactures field, particularly relates to a kind of equipment preparing Graphene at ambient pressure continuously fast.Comprise casing, cycle annealing chamber, cooling growth chamber, cooling chamber, casing becomes cycle annealing chamber by baffle for separating, cooling growth chamber, cooling chamber, cycle annealing chamber, cooling growth chamber inside is provided with inlet pipe from top to bottom all successively, mixing chamber, reaction cavity, inlet pipe stretches in mixing chamber through casing, mixing chamber is communicated with reaction cavity, refrigerating unit is provided with in cooling chamber, box house is also provided with pay-off, refrigerator pipe, pay-off is successively through the reaction cavity of cycle annealing chamber with cooling growth chamber, refrigerating unit, cycle annealing chamber, cooling growth chamber, cooling chamber is equipped with pressure release pipe.The beneficial effects of the utility model are: device structure is simple, easy to operate, arrange cycle annealing chamber, cooling growth chamber, cooling chamber can carry out in synchronous operation, improve production efficiency, high financial profit.
Description
Technical field
The utility model relates to Graphene and manufactures field, particularly relates to a kind of equipment preparing Graphene at ambient pressure continuously fast.
Background technology
Graphene is the hexagonal honey comb structure that carbon atom forms based on sp2 hydridization, the only two dimensional crystal of an atomic layers thick.2004, the people such as Andre Geim and Konstantin Novoselov found the single-layer graphene of stable existence, also obtained Nobel Prize in physics in 2010 because of its initiative work in Graphene.In recent years, Graphene all shows many stem-winding performances and potential application prospect in fields such as microelectronics, quantum physics, material, chemistry, has attracted the extensive concern of scientific circles and industry member.Graphene has excellent power, heat, the character such as optical, electrical.Electronic mobility under Graphene normal temperature, more than 15000cm2/Vs, exceedes carbon nanotube and silicon crystal, and resistivity only about 10
-6Ω cm, lower than copper or silver is the material that resistivity is minimum in the world at present.And its up to 97.7% all wave band transmittance be that other electro-conductive materials are difficult to be equal to.
Industrial chemical vapour deposition (CVD) method that generally adopts is as the method preparing large-area graphene at present.But the speed of process for preparing graphenes by chemical vapour deposition is comparatively slow, equipment is complicated, and preparation cycle is long, affects production efficiency, and economic benefit is low.Current shortage is a kind of may be used for equipment that Graphene prepared continuously fast and method.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of equipment preparing continuously Graphene at ambient pressure fast, overcomes that Graphene preparation cycle is long, production efficiency is low, the defect of complex process, deficiency in economic performance.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of equipment preparing Graphene at ambient pressure continuously fast, comprise casing, cycle annealing chamber, cooling growth chamber, cooling chamber, described casing becomes described cycle annealing chamber by baffle for separating, described cooling growth chamber, described cooling chamber, described cycle annealing chamber, described cooling growth chamber inside is provided with inlet pipe from top to bottom all successively, mixing chamber, reaction cavity, described inlet pipe stretches in described mixing chamber through described casing, described mixing chamber is communicated with described reaction cavity, refrigerating unit is provided with in described cooling chamber, described box house is also provided with pay-off, refrigerator pipe, described pay-off passes the reaction cavity of described cycle annealing chamber and described cooling growth chamber successively, described refrigerating unit, described cycle annealing chamber, described cooling growth chamber, described cooling chamber is equipped with pressure release pipe.
The beneficial effects of the utility model are: device structure is simple, easy to operate, arrange cycle annealing chamber, cooling growth chamber, cooling chamber can carry out in synchronous operation, improve production efficiency, high financial profit.
On the basis of technique scheme, the utility model can also do following improvement.
Further, the dividing plate between described cycle annealing chamber and described cooling growth chamber is provided with the first valve, and the dividing plate between described cooling growth chamber and described cooling chamber is provided with the second valve.
The beneficial effect of above-mentioned further scheme is adopted to be: valve to be set and to make can be interconnected between cycle annealing chamber, cooling growth chamber, cooling chamber, be conducive to the reaction that pay-off transported material does not affect again each chamber simultaneously, make each chamber autonomous closure.
Further, described pay-off comprises discharge mechanism, discharging mechanism, travelling belt, described discharge mechanism is arranged in described cycle annealing chamber, described discharging mechanism is arranged in described cooling chamber, one end of described travelling belt is connected with described discharge mechanism, and the other end of described travelling belt is connected with described discharging mechanism through after the reaction cavity in described cycle annealing chamber, described first valve, the reaction cavity of described cooling growth chamber, described second valve, described refrigerating unit successively.
The beneficial effect of above-mentioned further scheme is adopted to be: the automatic transportation being achieved equipment by pay-off, easy to operate, improve production efficiency.
Further, the top of each described reaction cavity and bottom are provided with well heater.
Adopt the beneficial effect of above-mentioned further scheme to be: the temperature of reaction effectively being controlled the inside of reaction cavity by well heater, be easy to control, make to remain in suitable range of reaction temperature during reaction.
Further, the inlet pipe quantity in described cycle annealing chamber is at least two, and the inlet pipe quantity of described cooling growth chamber is at least three.
Adopt the beneficial effect of above-mentioned further scheme to be: the gas passed into can be passed into respectively simultaneously, save time, enhance productivity, avoid inlet pipe quantity very few simultaneously, after having an inlet pipe to damage, affect production efficiency.
Adopt a kind of method preparing Graphene according to aforesaid device, comprise the following steps:
1) by described pay-off, metal base is sent in described cycle annealing chamber, inlet pipe to described cycle annealing chamber passes into inert protective gas and reducing gas, carry out annealing reaction, by described pay-off, metal base is sent in described cooling growth chamber after completing annealing reaction;
2) inlet pipe to described cooling growth chamber passes into reactant gases, and carry out hypothermic response, in hypothermic response process, metal base (13) to film forming, then is sent in described cooling chamber by described pay-off by the Graphene nucleating growth in metal base (13);
3) in described cooling chamber, pass into rare gas element, the temperature reduced in described cooling chamber by described refrigerating unit is room temperature, after completing the Graphene cooling in metal base (13), carries out discharging, completes the preparation of Graphene.
Beneficial effect is: step is simple, easy to operate, and can synchronised recycling carry out, and improves the manufacture efficiency of Graphene, shortens preparation cycle.
Further, in described step 1) in, the quantity of the inlet pipe in described cycle annealing chamber is at least two, and described two inlet pipe pass into described inert protective gas and described reducing gas respectively, and described inert protective gas can be Ar, and described reducing gas can be H
2, described Ar and described H
2be enter the reaction of described reaction cavity again after 1000sccm and 200sccm enters the mixing of described mixing chamber respectively with flow, the temperature of reaction of described reaction cavity 900 ~ 1000 DEG C, reaction times is 30 ~ 60 minutes, and is normal pressure by the described pressure release pipe relief pressure air pressure adjusted in described cycle annealing chamber.
Adopt the beneficial effect of above-mentioned further scheme to be: energy efficient, provides good reaction environment by suitable gas mixing ratio, improve output and the quality of Graphene.
Further, in described step 2) in, the quantity of the inlet pipe of described cooling growth chamber is at least three, and described three inlet pipe pass into three kinds of described reactant gasess respectively, and three kinds of described reactant gasess are respectively Ar, H
2, CH
4, described Ar, described H
2, described CH
4be enter the reaction of described reaction cavity again after 500sccm, 200sccm, 10sccm enter the mixing of described mixed air vessel respectively with flow, the temperature of reaction of described reaction cavity is reduced to 800 DEG C by 1000 DEG C, the time of temperature-fall period is 10 ~ 30 minutes, and is normal pressure by the described pressure release pipe relief pressure air pressure adjusted in described cooling growth chamber.
The beneficial effect of above-mentioned further scheme is adopted to be: energy efficient, adopts cooling temperature suitable cooling time, enhance productivity under the guarantee of Graphene quality simultaneously.
Further, in described step 3) in, be normal pressure by the described pressure release pipe relief pressure air pressure adjusted in described cooling chamber, be that the speed of 200sccm passes into Ar to the refrigerator pipe of described cooling chamber with flow, room temperature is cooled under described refrigerating unit, cooling time is 20 minutes, and the type of cooling is water-cooled or air-cooled.
Adopt the beneficial effect of above-mentioned further scheme to be: energy efficient, fast the Graphene that generates of cooling, production efficiency is high.
Further, described metal base is Copper Foil, and the form of described metal base is sheet material or coiled material, and each described reaction cavity is made up of quartz.
Adopt the beneficial effect of above-mentioned further scheme to be: the reaction efficiency being conducive to improving Graphene, adopts the reaction cavity of quartzy material, make reaction chamber physical efficiency adapt to high temperature change.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation preparing the equipment of Graphene at ambient pressure continuously fast of the utility model.
In accompanying drawing, the list of parts representated by each label is as follows:
1, cycle annealing chamber, 2, inlet pipe, 3, mixing chamber, 4, well heater, 5, cooling growth chamber, 6, refrigerator pipe, 7, the second valve, 8, cooling chamber, 9, discharging mechanism, 10, pressure release pipe, 11, reaction cavity, 12, refrigerating unit, 13, metal base, 14, travelling belt, 15, discharge mechanism, 16, casing, the 17, first valve, 18, dividing plate.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, the utility model is for the preparation of the equipment of Graphene, comprise casing 16, cycle annealing chamber 1, cooling growth chamber 5, cooling chamber 8, described casing 16 is separated into described cycle annealing chamber 1, described cooling growth chamber 5, described cooling chamber 8 by dividing plate 18, and one end to the other end of casing 16 inside is arranged cycle annealing chamber 1, cooling growth chamber 5, cooling chamber 8 successively.Described cycle annealing chamber 1, described cooling growth chamber 5 inside are provided with inlet pipe 2, mixing chamber 3, reaction cavity 11 from top to bottom all successively, and Graphene is placed on reaction in reaction cavity 11.Inlet pipe 2 quantity in described cycle annealing chamber 1 is at least two, and inlet pipe 2 quantity of described cooling growth chamber 5 is at least three.Described inlet pipe 2 stretches in described mixing chamber 3 through described casing 16, and described mixing chamber 3 is communicated with described reaction cavity 11, and gas passes into after mixing in mixing chamber 3 in reaction cavity 11 and reacts.Top and the bottom of each described reaction cavity 11 are provided with well heater 4, and each described reaction cavity 11 is made up of quartz, and other resistant to elevated temperatures materials also can be taked to make, to bear pyroreaction.
As shown in Figure 1, be provided with refrigerating unit 12 in described cooling chamber 8, described casing 16 inside is also provided with pay-off, refrigerator pipe 6, passes into Ar by refrigerator pipe 6, and refrigerating unit 12 adopts mode that is air-cooled or water-cooled to carry out cooling down to Graphene simultaneously.Described pay-off passes reaction cavity 11, the described refrigerating unit 12 of described cycle annealing chamber 1 and described cooling growth chamber 5 successively, and described cycle annealing chamber 1, described cooling growth chamber 5, described cooling chamber 8 are equipped with pressure release pipe 10.Pressure release pipe 10 blowdown presssure in Graphene reaction process makes device interior remain normal pressure.Dividing plate 18 between described cycle annealing chamber 1 and described cooling growth chamber 5 is provided with the first valve 17, and the dividing plate 18 between described cooling growth chamber 5 and described cooling chamber 8 is provided with the second valve 7.Driven by motor pay-off moves, described pay-off comprises discharge mechanism 15, discharging mechanism 9, travelling belt 14, described discharge mechanism 15 is arranged in described cycle annealing chamber 1, described discharging mechanism 9 is arranged in described cooling chamber 8, one end of described travelling belt 14 is connected with described discharge mechanism 15, and the other end of described travelling belt 14 is connected with described discharging mechanism 9 through after the reaction cavity 11 in described cycle annealing chamber 1, described first valve 17, the reaction cavity 11 of described cooling growth chamber 5, described second valve 7, described refrigerating unit 12 successively.Material is placed on a conveyor belt 14 by discharge mechanism 15, be introduced in cycle annealing chamber 1 and react, after having reacted, travelling belt 14 drives material to pass the first valve 17 and enters cooling growth chamber 5, in cooling growth chamber 5 after reaction, driven to enter in cooling chamber 8 by travelling belt 14 again and cool, by discharging mechanism 9 discharging after having cooled, complete the preparation of Graphene.
Following preparation method is adopted to complete the preparation of Graphene by equipment of the present utility model, comprise the following steps: 1) by described pay-off, metal base 13 is sent in described cycle annealing chamber 1, inlet pipe 2 to described cycle annealing chamber 1 passes into inert protective gas and reducing gas, carry out annealing reaction, by described pay-off, metal base 13 is sent in described cooling growth chamber 5 after completing annealing reaction; 2) inlet pipe 2 to described cooling growth chamber 5 passes into reactant gases, and carry out hypothermic response, in hypothermic response process, metal base 13 to film forming, then is sent in described cooling chamber 8 by described pay-off by the Graphene nucleating growth in metal base 13; 3) in described cooling chamber 8, pass into rare gas element, the temperature reduced in described cooling chamber 8 by described refrigerating unit 12 is room temperature, after completing the Graphene cooling in metal base 13, carries out discharging, completes the preparation of Graphene.The metal base 13 adopted can adopt Copper Foil, and the form of described metal base 13 is sheet material or coiled material, to improve the growth response efficiency of Graphene.
Above-mentioned three steps can simultaneously in the cycle annealing chamber 1 of correspondence, cooling growth chamber 5, cooling chamber 8 carry out, cycle annealing chamber 1 keeps steady temperature, and cooling growth chamber 5 carries out gradient of temperature, cooling chamber 8 cools, three chamber synchronised recycling are carried out, and can save time, enhance productivity.For above-mentioned three steps, specifically proceed as follows.
In described step 1) in, the quantity of the inlet pipe 2 in described cycle annealing chamber 1 is at least two, and described two inlet pipe 2 pass into described inert protective gas and described reducing gas respectively, and described inert protective gas can be Ar, and described reducing gas can be H
2, described Ar and described H
2be enter described reaction cavity 11 again after 1000sccm and 200sccm enters the mixing of described mixing chamber 3 to react respectively with flow.The temperature of reaction of described reaction cavity 11 900 ~ 1000 DEG C, preferable temperature is 1000 DEG C, and the reaction times is 30 ~ 60 minutes, preferably 30 minutes, and is normal pressure by the described pressure release pipe 10 relief pressure air pressure adjusted in described cycle annealing chamber 1.
In described step 2) in, the quantity of the inlet pipe 2 of described cooling growth chamber 5 is at least three, and described three inlet pipe 2 pass into three kinds of described reactant gasess respectively, and three kinds of described reactant gasess are respectively Ar, H
2, CH
4, described Ar, described H
2, described CH
4be enter described reaction cavity 11 again after 500sccm, 200sccm, 10sccm enter the mixing of described mixed air vessel to react respectively with flow, the temperature of reaction of described reaction cavity is reduced to 800 DEG C by 1000 DEG C, the time of temperature-fall period is 10 ~ 30 minutes, and the preferred time is 10 minutes.Graphene nucleating growth in slow cooling process, until film forming, and is normal pressure by the described pressure release pipe 10 relief pressure air pressure adjusted in described cooling growth chamber 5.
In described step 3) in, be normal pressure by the described pressure release pipe 10 relief pressure air pressure adjusted in described cooling chamber 8, be that the speed of 200sccm passes into Ar to the refrigerator pipe 6 of described cooling chamber 8 with flow, room temperature is cooled to 12 times at described refrigerating unit, cooling time is 20 minutes, and the type of cooling is water-cooled or air-cooled.
In the continuous circulation growth of Graphene, the temperature in cycle annealing chamber 1 remains normal pressure, and gas remains Ar and H
2, flow is respectively 1000sccm and 200sccm; In cooling growth chamber 5, when there is no material, namely material to be in cooling chamber 8 or in cycle annealing chamber 1 time, the temperature-rise period from 800 DEG C to 1000 DEG C can be carried out, in the process without the need to passing into carbon-source gas, as CH
4. time in cooling chamber 8 without material, the atmospheric pressure environment of Ar can be kept, close air inlet and valve of giving vent to anger, save unnecessary gas consumption.
Can adopt for above-mentioned steps but be not limited to following examples:
Embodiment one:
Metal base 13 is delivered on travelling belt 14 by discharge mechanism 15, and metal base 13 is sent in the reaction cavity 11 in cycle annealing chamber 1 by travelling belt 14, and two inlet pipe 2 in cycle annealing chamber 1 are corresponding respectively passes into Ar and H that flow is 1000sccm and 200sccm
2, the pressure in cycle annealing chamber 1 is adjusted to normal pressure by pressure release tracheae, and the temperature in cycle annealing chamber 1 is 1000 DEG C, after annealing 30 minutes in reaction cavity 11.Open the first valve 17, metal base 13 be sent in the reaction cavity 11 in cooling growth chamber 5, three inlet pipe 2 of cooling growth chamber 5 are corresponding respectively passes into Ar, H that flow is 500sccm, 200sccm, 10sccm
2, CH
4, by cooling growth chamber 5 in pressure be adjusted to normal pressure by pressure release tracheae, temperature was dropped to 800 DEG C from 1000 DEG C by 10 minutes by metal base 13 Copper Foil, the Graphene in metal base 13 in slow cooling process nucleating growth until film forming.After the graphene growth that metal base 13 is completes, by opening the second valve 7, metal base 13 is sent in cooling chamber 8, the Ar that flow is 200sccm is passed in refrigerator pipe 6, pressure in cooling chamber 8 is adjusted to normal pressure by pressure release tracheae, adopt water-cooled or air-cooled mode to cool 20 minutes to room temperature by refrigerating unit 12, finally by discharging mechanism 9 discharging, complete the preparation of Graphene.
Embodiment two:
Metal base 13 is delivered on travelling belt 14 by discharge mechanism 15, and metal base 13 is sent in the reaction cavity 11 in cycle annealing chamber 1 by travelling belt 14, and two inlet pipe 2 in cycle annealing chamber 1 are corresponding respectively passes into Ar and H that flow is 1000sccm and 200sccm
2, the pressure in cycle annealing chamber 1 is adjusted to normal pressure by pressure release tracheae, and the temperature in cycle annealing chamber 1 is 900 DEG C, after annealing 60 minutes in reaction cavity 11.Open the first valve 17, metal base 13 be sent in the reaction cavity 11 in cooling growth chamber 5, three inlet pipe 2 of cooling growth chamber 5 are corresponding respectively passes into Ar, H that flow is 500sccm, 200sccm, 10sccm
2, CH
4, by cooling growth chamber 5 in pressure be adjusted to normal pressure by pressure release tracheae, temperature was dropped to 800 DEG C from 1000 DEG C by 30 minutes by metal base 13 Copper Foil, the Graphene in metal base 13 in slow cooling process nucleating growth until film forming.After graphene growth in metal base 13 completes, by opening the second valve 7, metal base 13 is sent in cooling chamber 8, the Ar that flow is 200sccm is passed in refrigerator pipe 6, pressure in cooling chamber 8 is adjusted to normal pressure by pressure release tracheae, adopt water-cooled or air-cooled mode to cool 20 minutes to room temperature by refrigerating unit 12, finally by discharging mechanism 9 discharging, complete the preparation of Graphene.
Embodiment three:
Metal base 13 is delivered on travelling belt 14 by discharge mechanism 15, and metal base 13 is sent in the reaction cavity 11 in cycle annealing chamber 1 by travelling belt 14, and two inlet pipe 2 in cycle annealing chamber 1 are corresponding respectively passes into Ar and H that flow is 1000sccm and 200sccm
2, the pressure in cycle annealing chamber 1 is adjusted to normal pressure by pressure release tracheae, and the temperature in cycle annealing chamber 1 is 950 DEG C, after annealing 45 minutes in reaction cavity 11.Open the first valve 17, metal base 13 be sent in the reaction cavity 11 in cooling growth chamber 5, three inlet pipe 2 of cooling growth chamber 5 are corresponding respectively passes into Ar, H that flow is 500sccm, 200sccm, 10sccm
2, CH
4, by cooling growth chamber 5 in pressure be adjusted to normal pressure by pressure release tracheae, temperature was dropped to 800 DEG C from 1000 DEG C by 15 minutes by metal base 13 Copper Foil, the Graphene in metal base 13 in slow cooling process nucleating growth until film forming.After graphene growth in metal base 13 completes, by opening the second valve 7, metal base 13 is sent in cooling chamber 8, the Ar that flow is 200sccm is passed in refrigerator pipe 6, pressure in cooling chamber 8 is adjusted to normal pressure by pressure release tracheae, adopt water-cooled or air-cooled mode to cool 20 minutes to room temperature by refrigerating unit 12, finally by discharging mechanism 9 discharging, complete the preparation of Graphene.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (5)
1. prepare the equipment of Graphene at ambient pressure continuously fast for one kind, it is characterized in that, comprise casing (16), cycle annealing chamber (1), cooling growth chamber (5), cooling chamber (8), described casing (16) is separated into described cycle annealing chamber (1) by dividing plate (18), described cooling growth chamber (5), described cooling chamber (8), described cycle annealing chamber (1), described cooling growth chamber (5) inside is provided with inlet pipe (2) from top to bottom all successively, mixing chamber (3), reaction cavity (11), described inlet pipe (2) stretches in described mixing chamber (3) through described casing (16), described mixing chamber (3) is communicated with described reaction cavity (11), refrigerating unit (12) is provided with in described cooling chamber (8), described casing (16) inside is also provided with pay-off, refrigerator pipe (6), described pay-off passes the reaction cavity (11) of described cycle annealing chamber (1) and described cooling growth chamber (5) successively, described refrigerating unit (12), described cycle annealing chamber (1), described cooling growth chamber (5), described cooling chamber (8) is equipped with pressure release pipe (10).
2. a kind of equipment preparing Graphene at ambient pressure continuously fast according to claim 1, it is characterized in that, dividing plate (18) between described cycle annealing chamber (1) and described cooling growth chamber (5) is provided with the first valve (17), and the dividing plate (18) between described cooling growth chamber (5) and described cooling chamber (8) is provided with the second valve (7).
3. a kind of equipment preparing Graphene at ambient pressure continuously fast according to claim 2, it is characterized in that, described pay-off comprises discharge mechanism (15), discharging mechanism (9), travelling belt (14), described discharge mechanism (15) is arranged in described cycle annealing chamber (1), described discharging mechanism (9) is arranged in described cooling chamber (8), one end of described travelling belt (14) is connected with described discharge mechanism (15), the other end of described travelling belt (14) is successively through the reaction cavity (11) of described cycle annealing chamber (1), described first valve (17), the reaction cavity (11) of described cooling growth chamber (5), described second valve (7), described refrigerating unit (12) is connected with described discharging mechanism (9) afterwards.
4. a kind of equipment preparing Graphene at ambient pressure continuously fast according to claim 1, it is characterized in that, top and the bottom of each described reaction cavity (11) are provided with well heater (4).
5. a kind of equipment preparing Graphene at ambient pressure continuously fast according to any one of Claims 1-4, it is characterized in that, inlet pipe (2) quantity of described cycle annealing chamber (1) is at least two, and inlet pipe (2) quantity of described cooling growth chamber (5) is at least three.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104477896A (en) * | 2014-12-12 | 2015-04-01 | 中国科学院重庆绿色智能技术研究院 | Equipment and method of continuously and rapidly preparing graphene under normal pressure |
| CN116553527A (en) * | 2023-06-20 | 2023-08-08 | 烯格沃(上海)纳米技术有限公司 | Industrial synthesis device for single-walled carbon nanotubes |
-
2014
- 2014-12-12 CN CN201420786372.7U patent/CN204324890U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104477896A (en) * | 2014-12-12 | 2015-04-01 | 中国科学院重庆绿色智能技术研究院 | Equipment and method of continuously and rapidly preparing graphene under normal pressure |
| CN116553527A (en) * | 2023-06-20 | 2023-08-08 | 烯格沃(上海)纳米技术有限公司 | Industrial synthesis device for single-walled carbon nanotubes |
| CN116553527B (en) * | 2023-06-20 | 2023-12-15 | 烯格沃(上海)纳米技术有限公司 | Industrial synthesis device for single-walled carbon nanotubes |
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