CN106384811B - A kind of indigo plant phosphorus/transition metal dichalcogenide hetero-junctions anode material and preparation method - Google Patents
A kind of indigo plant phosphorus/transition metal dichalcogenide hetero-junctions anode material and preparation method Download PDFInfo
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- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
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Abstract
The present invention relates to a kind of blue phosphorus/transition metal dichalcogenide hetero-junctions anode materials and preparation method thereof, the technical solution adopted is that: the first-principles method calculating simulation based on Density Functional Theory, blue phosphorus/transition metal dichalcogenide hetero-junctions is screened, the preparation method of the hetero-junctions is further designed；It first uses chemical vapor deposition method to prepare transition metal dichalcogenide；Then transition metal dichalcogenide, white phosphorus powder and organic solvent are uniformly mixed, then after centrifugal treating, are then made annealing treatment in vacuum or argon atmosphere, obtain blue phosphorus/transition metal dichalcogenide hetero-junctions anode material.The anode material that the present invention is prepared has good structural stability, electric conductivity, flexibility, biggish lithium adsorption capacity and good electric property, and preparation process is simple, and repeatability is strong, and high yield rate is at low cost, is suitable for industrialization large-scale production.
Description
Technical field
The present invention relates to technical field of nano material, propose a kind of two chalkogenide hetero-junctions anode of blue phosphorus/transition metal
Material.
Background technique
Two-dimentional two chalkogenide of transition metal (transition metal dichalcogenides, TMDs), generalization
Formula form is MX2, wherein M can be Section IV, V, VI main group transition metal, and X is chalcogen S, Se, Te, such as MoS2With
NbS2, extensive concern is caused, not only due to its unique electronics and catalytic performance, due also to by answering in its wider range
Become or vertical electric field is to the adjustability of its energy band engineering.
Elemental phosphorous there are four types of allotropes, it may be assumed that white phosphorus, red phosphorus, violet phosphorus and black phosphorus (BP).From experimentally discovery two dimension
Material black phosphorus, Zhu etc. further provide only there are two atomic layers thick another form phosphorus: blue phosphorus (Blue
Phosphorus, BlueP) [Zhen Zhu, and David Tom á nek, Semiconducting Layered Blue
Phosphorus: A Computational Study, Phys. Rev. Lett, 2014, 112(17): 176802]。
BlueP has with BP the same thermal stability, and has outstanding physical and chemical properties.BlueP, MX of stratiform2It is all six
The crystal of square structure, and only 2% lattice mismatch, this is conducive to the Van der Waals hetero-junctions for constructing high quality.And
BlueP and MX2There are a big specific surface area, therefore, BlueP/MX2Van der Waals hetero-junctions can form a fold
Surface, this for storage lithium ion provide bigger space.It is simple to have by " cooking formula " research and development of test preparation
Blindness, research cost is high, and efficiency of research and development is low.
Present invention building structure first carries out material prescription and microcosmic using the first-principles calculations based on Density functional
Structure design, systematically has studied a variety of BlueP/MX2The structural stability of Van der Waals hetero-junctions, electronic structure be modified,
Mechanical property, electrochemical properties of lithium absorption etc.；Further screening obtains with satisfactory electrical conductivity, mechanical flexibility and has higher
Lithium memory capacity two chalkogenide hetero-junctions of blue phosphorus/transition metal；Finally by the technology of preparing of unique low-dimensional materials,
Realize high-performance BlueP/MX2Heterojunction material is synthetically prepared.
Summary of the invention
It is developed to solve the blindness experimental study of " the cooking formula " of time-consuming consuming, improves research and development efficiency, reduce
Cost is researched and developed, the present invention is based on the first principles of Density functional, systematically have studied BlueP/MX2The structure of hetero-junctions
Stability, electronic structure modification, mechanical property, lithium absorption electrochemical properties etc., carry out the recipe calculation of material and microcosmic
Structure design proposes two chalkogenide hetero-junctions anode material of a kind of blue phosphorus/transition metal and preparation method thereof, the material obtained
Material has good structural stability and mechanical flexibility as lithium ion battery anode material, while its electrical performance is good
It is good.
A kind of indigo plant two chalkogenide hetero-junctions anode material of phosphorus/transition metal, is made of following raw material: oxo transition metal
Compound, white phosphorus powder, sulfur family non-metal powder and organic solvent.
Wherein according to the molar ratio, transition metal oxide: white phosphorus powder: sulfur family non-metal powder: organic solvent=2:1:7:
16。
The sulfur family non-metal powder is sulphur powder, the one of which of selenium powder, tellurium powder.
The transition metal oxide is MoO3、WO3、NbO3、TaO3One of which.
The organic solvent be dimethyl sulfoxide, N,N-dimethylformamide, N-Methyl pyrrolidone and isopropanol its
One of or two kinds.
The method for preparing the anode material, the specific steps are as follows:
(1) each material is weighed respectively according to formula rate；
(2) successively glass substrate is cleaned by ultrasonic with acetone, alcohol, then rinses glass substrate table with deionized water
Face 3-5 times；
(3) glass substrate and transition metal oxide are placed in the reaction chamber of plasma enhanced chemical vapor deposition,
It is evacuated down to 3 × 104~4×104Pa is passed through argon gas with 35 ~ 45sccm flow；Sulfur family non-metal powder is passed through into heating stove heating
It is changed into the nonmetallic steam of sulfur family to 450 ~ 990 DEG C；The temperature of the reaction chamber is heated to 650 ~ 950 DEG C of 2 ~ 3h of holding, then
It is heated to 750 ~ 1050 DEG C of 4 ~ 6h of holding；The nonmetallic steam of gained sulfur family is blown into reaction chamber using argon gas simultaneously, and is persistently led to
Entering to heating terminates；Finally two chalkogenide film of transition metal is formed in the substrate surface；
(4) lower two chalkogenide film of transition metal is cut from glass substrate with pocket knife, is placed in mortar and slowly grinds
To powder；
(5) two chalkogenide powder of transition metal, white phosphorus powder and the organic solvent obtained step (4) stirs 2 ~ 20h
It is uniformly mixed, stands 8 ~ 10h, then by centrifugation, filtering, then with alcohol washes, obtain blue two chalkogenide of phosphorus/transition metal
Heterojunction composite；
(6) product made from step (5) is made annealing treatment in vacuum or argon atmosphere in 700 ~ 900 DEG C, is annealed
Time is 5 ~ 8h, obtains the two chalkogenide hetero-junctions anode material of blue phosphorus/transition metal.
The present invention has the advantage that compared with the prior art
(1) the present invention is based on the first-principles methods of Density Functional Theory, avoid blindness " cooking formula " repeatedly
Experiment carries out the recipe calculation and microcosmic structure design of material, is prepared by vapour deposition process with good structure
Stability, electric conductivity, Van der Waals hetero-junctions-indigo plant phosphorus/two sulfur family of transition metal of flexibility and biggish lithium adsorption capacity
Compound hetero-junctions, and in this, as lithium ion battery anode material；
(2) present invention further proposes the controllable two chalkogenide hetero-junctions of low-dimensional indigo plant phosphorus/transition metal of the number of plies is flexible
The preparation method of anode material.Existed by control two chalkogenide powder of transition metal, white phosphorus powder and ORGANIC SOLVENT MIXTURES
Cutting mixing time in agitator equipped with high speed rotation cutter head realizes the control of the number of plies.Mixing time is longer, is prepared into
The two chalkogenide heterojunction material of blue phosphorus/transition metal arrived is thinner, and the corresponding number of plies is fewer.
(3) preparation process of the present invention is simple, and repeatability is strong, and high yield rate is at low cost, and it is extensive raw to be suitable for industrialization
It produces, there is significant social benefit and economic benefit.
Detailed description of the invention
Fig. 1 is single layer indigo plant phosphorus/NbS2, indigo plant phosphorus/TaS2The band structure of hetero-junctions, wherein fermi level is arranged in 0eV.
Fig. 2 is (a) single layer indigo plant phosphorus/NbS2, (b) indigo plant phosphorus/TaS2Hetero-junctions is respectively along zigzag and armchair shape side
To uniaxial stress-strain curve.
Fig. 3 is blue phosphorus/NbS2, indigo plant phosphorus/TaS2The XRD spectrum of hetero-junction thin-film.
Specific embodiment
Combined with specific embodiments below, the present invention is described in further detail, and of the invention protects content not limit to
In following embodiment.It is all according to equivalent changes and modifications within the scope of the patent application of the present invention, should all belong to of the invention and cover model
It encloses.
Embodiment 1
A kind of indigo plant two chalkogenide hetero-junctions anode material of phosphorus/transition metal, raw material composition are as follows: according to the molar ratio:
NbO3: white phosphorus powder: sulphur powder: dimethyl sulfoxide=2:1:7:16.
Specific preparation process is as follows:
(1) NbO is weighed respectively according to formula rate3, white phosphorus, sulphur powder, each material of dimethyl sulfoxide；
(2) glass substrate is cleaned by ultrasonic using acetone soln, removes organic dirt of glass substrate surface, and adopt
The acetone of ultrasonic cleaning removal glass substrate surface is carried out to the glass substrate with alcohol, deionized water is rinsed 3 times；
(3) by glass substrate and NbO3Powder is placed in the reaction chamber of plasma enhanced chemical vapor deposition, is vacuumized
To 3 × 104Pa is passed through high pure protective gas Ar, and flow control is in 35sccm；Sulphur powder is heated to 450 DEG C by heating furnace to turn
Become sulphur steam；The sulphur steam is blown into using carrier gas and is equipped with glass substrate and NbO3The reaction chamber of powder；By the reaction
The temperature of chamber is heated to the first preset temperature (650 DEG C) and keeps the first preset time (2h), and solid powder evaporates at this time,
So that the NbO3Powder and the sulphur steam reaction generate gaseous NbO3-xAnd deposit on the substrate, wherein 0 < x≤1,
The specific reaction equation of the process are as follows: NbO3+SNbO3-x+x/2SO2；The temperature of the reaction chamber is heated to the second preset temperature
(750 DEG C) and the second preset time (4h) is kept, continue to be passed through sulphur steam, so that the sulphur steam continues and NbO3-xReaction,
Substrate surface forms stratiform NbS2Film, the specific reaction equation of the process are as follows: NbO3-x+(7-x)/2SNbS2+(3-x)/2SO2；
(4) then by NbS2It is 300r/min rotary cutter that powder, white phosphorus powder and dimethyl sulfoxide, which are placed in equipped with revolving speed,
Agitator in, cutting stirring 20h, is then allowed to stand 8h at room temperature, then by centrifugation, filtering and cleaning, obtains with NbS2For base
The blue phosphorus of the hexagonal structure at bottom, so that single layer indigo plant phosphorus/NbS be made2Heterojunction composite；
(5) finally by indigo plant phosphorus/NbS obtained above2Heterojunction composite is annealed in vacuum atmosphere in 700 DEG C
Processing, soaking time 5h obtain the controllable blue phosphorus/NbS of the low-dimensional number of plies2Hetero-junctions flexible anode material.
Embodiment 2
A kind of indigo plant two chalkogenide hetero-junctions anode material of phosphorus/transition metal, raw material composition are as follows: according to the molar ratio:
TaO3: white phosphorus: sulphur powder: organic solvent=2:1:7:16.
The wherein organic solvent are as follows: in molar ratio, n,N-Dimethylformamide: N-Methyl pyrrolidone=1:3.
(1) TaO is weighed respectively according to formula rate3, white phosphorus, sulphur powder, N,N-dimethylformamide and N- crassitude
The each material of ketone mixed organic solvents；
(2) glass substrate is cleaned by ultrasonic using acetone soln, removes organic dirt of glass substrate surface, and adopt
The acetone of ultrasonic cleaning removal glass substrate surface is carried out to the glass substrate with alcohol, deionized water is rinsed 3 times；
(3) by glass substrate and TaO3Powder is placed in the reaction chamber of plasma enhanced chemical vapor deposition, is vacuumized
To 4 × 104Pa is passed through high pure protective gas Ar, and flow control is in 45sccm；Sulphur powder is heated to 450 DEG C by heating furnace to turn
Become sulphur steam；The sulphur steam is blown into using carrier gas and is equipped with glass substrate and TaO3The reaction chamber of powder；By the reaction
The temperature of chamber is heated to the first preset temperature (750 DEG C) and keeps the first preset time (3h), and solid powder evaporates at this time,
So that the TaO3Powder and the sulphur steam reaction generate gaseous TaO3-xAnd deposit on the substrate, wherein 0 < x≤1,
The specific reaction equation of the process are as follows: TaO3+STaO3-x+x/2SO2；The temperature of the reaction chamber is heated to the second preset temperature
(800 DEG C) and the second preset time (5h) is kept, continue to be passed through sulphur steam, so that the sulphur steam continues and TaO3-xReaction,
Substrate surface forms stratiform TaS2Film, the specific reaction equation of the process are as follows: TaO3-x+(7-x)/2STaS2+(3-x)/2SO2；
(4) then by TaS2Powder, white phosphorus powder and N,N-dimethylformamide mix organic with N-Methyl pyrrolidone
Solvent is placed in the agitator equipped with high speed rotation cutter head, at room temperature cutting stirring 10h, stand 8h, then by centrifugation, filtering and
Cleaning, obtains with TaS2For the blue phosphorus of the hexagonal structure of substrate, so that five layers of blue phosphorus/TaS be made2Heterojunction composite.
(5) finally by above-mentioned obtained indigo plant phosphorus/TaS2Heterojunction composite carries out at annealing in vacuum atmosphere in 750 DEG C
Reason, soaking time 7h obtain the controllable blue phosphorus/TaS of the number of plies2Hetero-junctions flexible anode material.
Embodiment 3
A kind of indigo plant two chalkogenide hetero-junctions anode material of phosphorus/transition metal, raw material composition are as follows: according to the molar ratio:
MoO3: white phosphorus: tellurium powder: methanol=2:1:7:16.
(1) MoO is weighed respectively according to formula rate3, white phosphorus, tellurium powder, each material of methanol；
(2) glass substrate is cleaned by ultrasonic using acetone soln, removes organic dirt of glass substrate surface, and adopt
The acetone of ultrasonic cleaning removal glass substrate surface is carried out to the glass substrate with alcohol, deionized water is rinsed 5 times；
(3) by glass substrate and MoO3Powder is placed in the reaction chamber of plasma enhanced chemical vapor deposition, is vacuumized
To 3.5 × 104Pa is passed through high pure protective gas Ar, and flow control is in 45sccm；Tellurium powder is heated to 990 DEG C by heating furnace
It is changed into tellurium steam；The tellurium steam is blown into using carrier gas and is equipped with glass substrate and MoO3The reaction chamber of powder；It will be described anti-
It answers the temperature of chamber to be heated to the first preset temperature (950 DEG C) and keeps the first preset time (3h), solid powder steams at this time
Hair, so that the MoO3Powder and the tellurium steam reaction generate gaseous MoO3-xAnd deposit on the substrate, wherein 0 < x
≤ 1, the specific reaction equation of the process are as follows: MoO3+TeMoO3-x+x/2TeO2；It is pre- that the temperature of the reaction chamber is heated to second
If temperature (1050 DEG C) simultaneously keeps the second preset time (6h), continue to be passed through tellurium steam, so that the tellurium steam continues and MoO3-x
Reaction forms stratiform MoTe in substrate surface2Film, the specific reaction equation of the process are as follows: MoO3-x+(7-x)/2TeMoTe2+
(3-x)/2TeO2；
(4) then by MoTe2Powder, white phosphorus powder and isopropanol organic solvent are placed in the stirring equipped with high speed rotation cutter head
In bucket, cutting stirring 4h, stands 8h, then by centrifugation, filtering and cleaning, obtain with MoTe at room temperature2It is tied for six sides of substrate
The blue phosphorus of structure, so that blue phosphorus/MoTe of three-dimensional structure be made2Compound.
(5) finally by above-mentioned obtained indigo plant phosphorus/MoTe2Heterojunction composite carries out at annealing in vacuum atmosphere in 900 DEG C
Reason, soaking time 8h obtain three-dimensional blue phosphorus/MoTe2Hetero-junctions anode material.
The present invention uses the first-principles calculations based on density functional theory, and screening is obtained with satisfactory electrical conductivity (energy
Band passes through fermi level, as shown in Figure 1), mechanical flexibility (uniaxial limit tensile strain be 17%, as shown in Figure 2) and have higher
Lithium adsorption capacity (528 mAhg−1) blue phosphorus/NbS2Hetero-junctions is better than graphene (372 mAhg−1, limit tensile strain
For 15%).And in lithium ion adsorption process, BlueP/NbS2The open-circuit voltage of hetero-junctions be always it is positive, as shown in table 1.
BlueP/NbS2Hetero-junctions is expected to apply as lithium battery flexible anode material.In XRD spectrum, peak is more sharp, and crystallinity is better.
Therefore as can be seen from Figure 3, BlueP/NbS2Maximum peak value is presented in hetero-junctions on (002) face, and peak width is only 1 °, remaining is brilliant
Face is presented the peak value of very little or does not occur peak, illustrating BlueP/NbS2Hetero-junctions has good crystallinity, with good
Good structural stability.
Table 1
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, is all covered by the present invention.
Claims (1)
1. a kind of preparation method of indigo plant two chalkogenide hetero-junctions anode material of phosphorus/transition metal, it is characterised in that: it is by following
Raw material composition: transition metal oxide, white phosphorus powder, sulfur family non-metal powder and organic solvent；According to the molar ratio, transition metal
Oxide: white phosphorus powder: sulfur family non-metal powder: organic solvent=2:1:7:16；The sulfur family non-metal powder be sulphur powder,
The one of which of selenium powder, tellurium powder；The transition metal oxide is MoO3、WO3、NbO3、TaO3One of which；Described
Organic solvent be dimethyl sulfoxide, N, dinethylformamide, N-Methyl pyrrolidone and isopropanol it is one such or
It is two or more；A kind of method of the two chalkogenide hetero-junctions anode material of blue phosphorus/transition metal, the specific steps are as follows:
(1) each material is weighed respectively according to formula rate；
(2) successively glass substrate is cleaned by ultrasonic with acetone, alcohol, then rinses glass substrate surface 3- with deionized water
5 times；
(3) glass substrate and transition metal oxide are placed in the reaction chamber of plasma enhanced chemical vapor deposition, are taken out true
Sky is to 3 × 104~4×104Pa is passed through argon gas with 35 ~ 45sccm flow；Sulfur family non-metal powder is heated to by heating furnace
450 ~ 990 DEG C are changed into the nonmetallic steam of sulfur family；The temperature of the reaction chamber is heated to 650 ~ 750 DEG C of 2 ~ 3h of holding, then plus
Heat is to 750 ~ 800 DEG C of 4 ~ 6h of holding；Using argon gas the nonmetallic steam of gained sulfur family is blown into reaction chamber simultaneously, and be continually fed into
Heating terminates；Finally two chalkogenide film of transition metal is formed in the substrate surface；
(4) lower two chalkogenide film of transition metal is cut from glass substrate with pocket knife, is placed in mortar and is slowly ground to powder
End；
(5) two chalkogenide powder of transition metal, white phosphorus powder and the organic solvent obtained step (4) stirs 2 ~ 20h mixing
Uniformly, 8-10h is stood, then by centrifugation, filtering, then with alcohol washes, obtains the heterogeneous of blue two chalkogenide of phosphorus/transition metal
Tie compound；
(6) product made from step (5) is made annealing treatment, annealing time in vacuum or argon atmosphere in 700 ~ 900 DEG C
For 5-8h, the two chalkogenide hetero-junctions anode material of blue phosphorus/transition metal is obtained；
High speed rotation cutter head is being housed by control two chalkogenide powder of transition metal, white phosphorus powder and ORGANIC SOLVENT MIXTURES
Agitator in cutting mixing time realize the control of the number of plies.
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| CN107919464B (en) * | 2017-10-27 | 2018-08-17 | 长江大学 | A kind of lithium ion battery telluride molybdenum anode material and preparation method thereof |
| CN108408772B (en) * | 2018-04-27 | 2019-10-15 | 福州大学 | A kind of preparation method of black phosphorus/transition metal trisulfide heterojunction material |
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| CN110714224B (en) * | 2019-09-17 | 2021-06-22 | 南京理工大学 | Preparation method of large-area high-stability single-layer blue phospholene based on molecular beam epitaxial growth |
| CN111470538B (en) * | 2020-03-25 | 2022-08-05 | 深圳先进技术研究院 | Method for modifying transition metal chalcogenide by phosphorus in molten system |
| CN113053474A (en) * | 2021-04-13 | 2021-06-29 | 南京信息工程大学 | Light chargeable material screening system and operation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102892709A (en) * | 2010-03-10 | 2013-01-23 | 耶达研究与发展有限公司 | Nanostructures, their use and process for their production |
| CN103641173A (en) * | 2013-11-04 | 2014-03-19 | 江苏大学 | Preparation method of graphite alkene like tungsten disulfide nanometer sheet |
| CN104846434A (en) * | 2015-04-10 | 2015-08-19 | 武汉大学 | Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof |
| CN105271800A (en) * | 2015-11-06 | 2016-01-27 | 天津大学 | Preparation method of large-area molybdenum disulfide film material |
| CN106024861A (en) * | 2016-05-31 | 2016-10-12 | 天津理工大学 | Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor |
-
2016
- 2016-10-14 CN CN201610895587.6A patent/CN106384811B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102892709A (en) * | 2010-03-10 | 2013-01-23 | 耶达研究与发展有限公司 | Nanostructures, their use and process for their production |
| CN103641173A (en) * | 2013-11-04 | 2014-03-19 | 江苏大学 | Preparation method of graphite alkene like tungsten disulfide nanometer sheet |
| CN104846434A (en) * | 2015-04-10 | 2015-08-19 | 武汉大学 | Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof |
| CN105271800A (en) * | 2015-11-06 | 2016-01-27 | 天津大学 | Preparation method of large-area molybdenum disulfide film material |
| CN106024861A (en) * | 2016-05-31 | 2016-10-12 | 天津理工大学 | Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor |
Non-Patent Citations (2)
| Title |
|---|
| "Blue Phosphorene/MS2 (M = Nb, Ta) Heterostructures As Promising Flexible Anodes for Lithium-Ion Batteries";Qiong Peng等;《ACS Appl. Mater. Interfaces》;20160511;第8卷(第21期);第13449-13457页 |
| "一些二维材料的第一性原理计算与设计";胡麟;《中国博士学位论文全文数据库 工程科技Ⅰ辑》;20160915(第2016/09年期);第24页倒数第1段到底30页倒数第1段，第71页倒数第2段到底80页倒数第1段 |
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