CN204290777U - A kind of single-phase inverter for high voltage direct current - Google Patents
A kind of single-phase inverter for high voltage direct current Download PDFInfo
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- CN204290777U CN204290777U CN201420654574.6U CN201420654574U CN204290777U CN 204290777 U CN204290777 U CN 204290777U CN 201420654574 U CN201420654574 U CN 201420654574U CN 204290777 U CN204290777 U CN 204290777U
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Abstract
The utility model belongs to electric energy switch technology field, discloses a kind of single-phase inverter for high voltage direct current, comprises counnter attack protective circuit, voltage reduction module, becomes the switching circuit of interchange and the control circuit of control switch circuit working for direct current; The input termination high voltage direct current outside input of counnter attack protective circuit, export the input of termination voltage reduction module and the direct-flow input end of switching circuit, the power input of the output connection control circuit of voltage reduction module, the control signal of control circuit exports the control signal input of termination switching circuit; Described switching circuit comprises the semiconductor switch device that four adopt bridge-type syndeton; Control circuit exports the pwm signal of at least one road for driving switch circuit breaker in middle break-over of device or disconnection.The utility model circuit structure is simple, and practical flexibly, safety and stability is reliable.
Description
Technical field
The utility model belongs to electric energy switch technology field, particularly relates to a kind of reforming unit high voltage direct current being transformed into alternating current, specifically a kind of single-phase inverter being applicable to high voltage direct current conversion.
Background technology
Inverter is that direct current energy is transformed into alternating current (being generally 220v/50HZ sine or square wave).Popular says, inverter is a kind of device direct current (DC) being converted into alternating current (AC), generally comprise inverter bridge, control logic and filter circuit etc., its extensive use in our daily life, as: computer, TV, fan, illumination and automobile etc., the inverter but used in daily life is all a kind of electronic equipment low pressure (12V or 24V or 48V) direct current being changed into 220V alternating current substantially, and by transformer efficiency, the restriction of switching device parameter and heat radiation etc., the inverter output power sold on the market is general all less.Inverter for high voltage direct current is not yet visible at present.
Summary of the invention
The purpose of this utility model is the defect for existing inverter technology, provides a kind of single-phase inverter, thus solves the design defect that above-mentioned inverter can not realize high input voltage, high-power output.
For achieving the above object, the utility model adopts following technical scheme: a kind of single-phase inverter for high voltage direct current, comprises counnter attack protective circuit, voltage reduction module, becomes the switching circuit of interchange and the control circuit of control switch circuit working for direct current; The input termination high voltage direct current outside input of counnter attack protective circuit, export the input of termination voltage reduction module and the direct-flow input end of switching circuit, the power input of the output connection control circuit of voltage reduction module, the control signal of control circuit exports the control signal input of termination switching circuit; Described switching circuit comprises the semiconductor switch device that four adopt bridge-type syndeton; Control circuit exports the pwm signal of at least one road for driving switch circuit breaker in middle break-over of device or disconnection.
Further, described switching circuit comprises direct current positive input terminal for inputting high voltage direct current and direct current negative input end, the first ac output end, the second ac output end, first via pwm signal incoming end, the second road pwm signal incoming end; Field effect transistor Q1 is connected between direct current positive input terminal and the first ac output end, field effect transistor Q2 is connected between direct current negative input end and the first ac output end, field effect transistor Q3 is connected between direct current positive input terminal and the second ac output end, and field effect transistor Q4 is connected between direct current negative input end and the second ac output end; The high and low level Direct driver field effect transistor Q4 conducting of first via pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q3 to disconnect and conducting; The conducting of the high and low level Direct driver field effect transistor Q2 of the second road pwm signal and disconnection, and the drive circuit of band bootstrapping function drives field effect transistor Q1 to disconnect and conducting.
Further, described counnter attack protective circuit comprises at least one diode or at least one rectifier bridge, connects anti-ballisticly send a telegraph device in road and burn for preventing input direct current both positive and negative polarity.Described counnter attack protective circuit is divided into two kinds of patterns according to the multi-form of design circuit, and when one is the reversal connection of input both positive and negative polarity, this single-phase inverter does not work, and when another kind is the reversal connection of input both positive and negative polarity, this single-phase inverter normally works.
Further, described voltage reduction module, for the high voltage direct current of input being converted to the low-voltage DC that control circuit needs, ensure the normal operation of control circuit, the utility model preferably has the DC-DC module of buck functionality.
Particularly, described counnter attack protective circuit comprises a rectifier bridge D7, and described voltage reduction module comprises a DC-DC and falls
Pressure chip U2; The input of two-way high voltage direct current outside connects two inputs of rectifier bridge D7 respectively, the positive and negative output of rectifier bridge D7 connects two inputs of DC-DC step-down chip U2 respectively, electric capacity C3 is connected between the positive and negative output of rectifier bridge D7, the positive output end of step-down chip U2 exports low-voltage DC through resistance R13, electric capacity C4 is connected between one end that negative output terminal and the resistance R13 of negative output termination GND, step-down chip U2 export low-voltage DC.
Further, in described switching circuit, the positive output end of anti-protective circuit is taken over control in field effect transistor Q1 drain electrode, source electrode connects the first ac output end, grid connects the positive output end of voltage reduction module through resistance R2, resistance R1, diode D1, and between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, base stage meets GND through resistance R4, and connects voltage reduction module positive output end through resistance R3, resistance R5; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 anode connects field effect transistor Q1 source electrode, and negative electrode connects field effect transistor Q1 grid.
Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode meets GND, and grid connects diode D3 anode.
Anti-protective circuit positive output end is taken over control in field effect transistor Q3 drain electrode, and source electrode connects the second ac output end, and grid connects voltage reduction module positive output end through resistance R8, resistance R7, diode D4; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and connects the positive output end of voltage reduction module through resistance R9, resistance R11; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 anode connects field effect transistor Q3 source electrode, and negative electrode connects field effect transistor Q3 grid.
Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode meets GND, and grid connects diode D6 anode.
With diode D6 anode between first control signal input connecting resistance R9 and R11, and connect field effect transistor Q4 grid through resistance R12.
With diode D3 anode between second control signal input connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
Further, control circuit of telling, for driving the break-make of said switching circuit breaker in middle device, described control circuit comprises a pwm chip U1, the power input pin Vcc of pwm chip U1 connects the positive output end of voltage reduction module, and pwm signal output pin CS1 connects the first control signal input of switching circuit.Pwm signal output pin CS2 connects the second control signal input of switching circuit.
Further, the preferred TL494C chip of described pwm chip U1, the positive output end of a termination rectifier bridge D7 of resistance R14, the other end meets GND through resistance R5; Diode D8 negative electrode connects the positive output end of rectifier bridge D7, between anode connecting resistance R14 and resistance R15; Electric capacity C6 positive terminating diode D8 anode, negative terminal meets GND; Resistance R17 mono-terminating diode D8 anode, the first negative input pin 1IN-of another termination control chip U1; Resistance R16 mono-termination capacitor C6 negative terminal, the DTC pin of another termination control chip U1 and electric capacity C6 anode; Connect between the DTC pin of control chip U1 and CS1 pin and be connected with electric capacity C8, and be connected with electric capacity C9 between CS2 pin; The RT pin of control chip U1 meets GND through resistance R18; The CT of control chip U1 draws foot meridian capacitor C7 and meets GND; Control chip U1 first negative input pin 1IN-, second negative input pin 2IN-, Verf pin, Ctrl pin are interconnected; First positive input pin 1IN+, the second positive input pin 2IN+ of control chip U1 meet GND.
The utility model beneficial effect comprises: the function that the conversion 1, achieving high voltage direct current by global design exchanges, and has filled up the blank of high-voltage d. c inverse transform device on market.2, create the switching circuit that two-way pwm signal controls four switching devices that bridge-type connects, simplify circuit structure, and greatly reduce the requirement to control circuit.3, full-bridge type counnter attack protection, connects arbitrarily outside input, practical flexibly.Selecting of DC-DC voltage reduction module, before realizing the function that step-down powers under topic, ensure that the safety and stability of circuit is reliable.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the utility model high-voltage d. c inverse transform device.
Fig. 2 is a kind of feasible program schematic diagram of the utility model counnter attack protective circuit.
Fig. 3 is the another kind of feasible program schematic diagram of the utility model counnter attack protective circuit.
Fig. 4 is another feasible program schematic diagram of the utility model counnter attack protective circuit.
Fig. 5 is the complementary PWM signals figure of the utility model high-voltage d. c inverse transform device.
Fig. 6 is the schematic diagram of the utility model high-voltage d. c inverse transform device.
Fig. 7 is the utility model switching circuit schematic diagram.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the utility model is further described.
With reference to Fig. 1, the utility model provides a kind of high-voltage d. c inverse transform device, comprises counnter attack protective circuit, DC-DC module, switching circuit and control circuit.
The input termination high voltage direct current of counnter attack protective circuit; output connects the input of DC-DC module and the input of switching circuit respectively; the input of the output connection control circuit of DC-DC module; the control end of the output termination switching circuit of control circuit; the input of the output termination filter circuit of switching circuit, the output output AC signal of filter circuit.
With reference to Fig. 2-4, counnter attack protective circuit comprises at least one diode or at least one rectifier bridge, connects anti-ballisticly send a telegraph device in road and burn for preventing input direct current both positive and negative polarity.Described counnter attack protective circuit is divided into two kinds of patterns according to the multi-form of design circuit, when one is the reversal connection of input both positive and negative polarity, this single-phase inverter does not work, as shown in Figure 2, as can be seen from Figure 2, when HVCC+ and HVCC-reversal connection, be subject to the reverse cut-off effect of diode, can not loop be formed; When another kind is the reversal connection of input both positive and negative polarity, this single-phase inverter normally works, as shown in Figure 3,4, wherein Fig. 3 is the rectification circuit be made up of four diodes, no matter HVCC+ and HVCC-is just connecing or reversal connection, the polarity exported is all constant, in like manner Fig. 4 is all-wave or the halfwave rectifier bridge module of some diodes formation, and principle is consistent with Fig. 3.
DC-DC module, for the high voltage direct current of input being converted to the low-voltage DC that control circuit needs, for control circuit provides necessary power supply supply.
With reference to Fig. 5, control circuit is used for the break-make of driving switch circuit breaker in middle device, this control circuit at least exports two-way complementary PWM signals, wherein PWM1 and PWM2 is one group of complementary signal, this drive singal ensures that in Fig. 6, while first hush pipe Q1 and the 4th field effect transistor Q4 conducting, the second field effect transistor Q2 and the 3rd field effect transistor Q3 ends, the second field effect transistor Q2 and the 3rd field effect transistor Q3 conducting while first hush pipe Q1 and the 4th field effect transistor Q4 ends.
With reference to Fig. 6, intermediate portion is divided into switching circuit, comprises at least one semiconductor switch, at least one resistance, at least one diode, at least one electric capacity, the utility model inverter comprises the first field effect transistor Q1, second field effect transistor Q2, 3rd field effect transistor Q3, 4th field effect transistor Q4, first diode D1, second diode D2, 3rd diode D3, 4th diode D4, 5th diode D5, 6th diode D6, first triode Q5, second triode Q6, first resistance R1, second resistance R2, 3rd resistance R3, 4th resistance R4, 5th resistance R5, 6th resistance R6, 7th resistance R7, 8th resistance R8, 9th resistance R9, tenth resistance R10, 11 resistance R11, 12 resistance R12, 13 resistance R13, 14 resistance R14, 15 resistance R15, 16 resistance R16, 17 resistance R17, 18 resistance R18, first electric capacity C1, second electric capacity C2, 3rd electric capacity C3, 4th electric capacity C4, 5th electric capacity C5, 6th electric capacity C6, 7th electric capacity C7, 8th electric capacity C8, power module U2, rectifier bridge D7, fuse F1, control chip U1, high-voltage DC power supply HVCC, low-voltage dc power supply VCC and ground GND.
Outside is input as DC power supply, and concrete connected mode is as follows:
The one termination outside input of fuse F1, an input of another termination rectifier bridge D7, another input termination outside input of rectifier bridge D7, the positive output end of rectifier bridge D7 connects the anode of the 3rd electric capacity C3 and an input of rectification module U2 respectively, the negative output of rectifier bridge D7 connects another input of rectification module U2, one end of output termination the 13 resistance R13 of rectification module U2, the anode of the 13 another termination of resistance R13 the 4th electric capacity C4, the negative terminal of the 4th electric capacity C4 connects rectification module U2 negative output terminal, the anode of the positive termination first diode D1 of the 4th electric capacity C4,
First field effect transistor Q1 drain electrode is connected with high-voltage DC power supply HVCC, first field effect transistor Q1 grid is connected with second resistance R2 one end and the second diode D2 negative electrode respectively, the second resistance R2 other end is connected with first resistance R1 one end and the first triode Q5 collector electrode respectively, the first resistance R1 other end is connected with the first diode D1 negative electrode and the first electric capacity C1 positive pole respectively, first diode D1 anode is connected with low-voltage dc power supply VCC, first field effect transistor Q1 source electrode respectively with the second diode D2 anode, first electric capacity C1 negative pole is connected with the second field effect transistor Q2 drain electrode, low-voltage dc power supply VCC is connected with the 5th resistance R5 one end, the 5th resistance R5 other end is connected with the 3rd resistance R3 and the 3rd diode D3 negative electrode respectively, the 3rd resistance R3 other end is connected with the 4th resistance R4 one end and the first triode Q5 base stage respectively, the 4th resistance R4 other end is connected with the one or three extreme Q5 emitter.
Second field effect transistor Q2 grid is connected with the 3rd diode D3 anode and the 6th resistance R6 one end respectively, the 6th resistance R6 other end is connected with the 3rd diode D3 negative electrode, 3rd diode D3 negative electrode connects control signal, and the second field effect transistor Q2 source electrode is connected with the 3rd field effect transistor Q4 source electrode and GND respectively.
3rd field effect transistor Q3 drain electrode is connected with high-voltage DC power supply HVCC, 3rd field effect transistor Q3 grid is connected with the 8th resistance R8 one end and the 5th diode D5 negative electrode respectively, the 5th resistance R5 other end is connected with the 7th resistance R7 one end and the second triode Q6 collector electrode respectively, the 7th resistance R7 other end is connected with the 4th diode D4 negative electrode and the second electric capacity C2 positive pole respectively, 4th diode D4 anode is connected with low-voltage dc power supply VCC, 3rd field effect transistor Q3 source electrode respectively with the 5th diode D5 anode, second electric capacity C2 negative pole is connected with the 4th field effect transistor Q4 drain electrode, low-voltage dc power supply VCC is connected with the 11 resistance R11 one end, the other end of the 11 resistance R11 is connected with the 9th resistance R9 and the 6th diode D6 negative electrode respectively, the 9th resistance R9 other end is connected with the tenth resistance R10 one end and the second triode Q6 base stage respectively, the tenth resistance R10 other end is connected with the two or three extreme Q6 emitter.
4th field effect transistor Q4 grid is connected with the 6th diode D6 anode and the 12 resistance R12 one end respectively, and the 12 resistance R12 other end is connected with the 6th diode D6 negative electrode, and the 6th diode D6 negative electrode is connected with pwm control signal.
The anode of the 3rd electric capacity C3 connects one end of the 14 resistance R14 and the negative electrode of the 8th diode D8 respectively, the other end of the 14 resistance R14 connects the anode of the 8th diode D8 respectively, one end of 15 resistance R15 and the anode of the 6th electric capacity C6, the 15 resistance R15 other end connects the negative terminal of the 6th electric capacity C6 and one end of the 16 resistance R16 respectively, another termination pwm chip U1 the 4th pin of the 16 resistance R16, 2nd pin of the one termination pwm chip U1 of the 17 resistance R17, the anode of another termination the 6th electric capacity C6 of the 17 resistance R17, 1 pin of control chip U1 meets GND, 2nd pin of control chip U1 connects the 13rd of control chip U1 the respectively, 14 and 15 pin, 4th pin of control chip U1 connects the anode of the 16 resistance R16 and one end of the 8th electric capacity C8 respectively, 8th pin of another termination control chip U1 of the 8th electric capacity C8, 8th pin of control chip U1 connects the negative electrode of the 6th diode D6, 5th pin of control chip U1 connects one end of the 7th electric capacity C7, the other end of the 7th electric capacity C7 connects one end of the 18 resistance R18 and the 7th pin of control chip U1 respectively, 6th pin of another termination control chip U1 of the 18 resistance R18, 7th pin of control chip U1 meets GND, 9th pin of control chip U1 connects the 10th pin of control chip U1 and meets GND simultaneously, 11st pin of control chip U1 connects the negative electrode of the 3rd diode D3 and one end of the 9th electric capacity C9 respectively, the anode of another termination the 6th electric capacity C6 of the 9th electric capacity C9, 12nd pin of control chip U1 meets low-voltage dc power supply VCC, 16th pin of control chip U1 meets GND.
The anode of the one termination second diode D2 of the 5th electric capacity C5, the anode of another termination the 5th diode D5 of the 5th electric capacity C5, the two ends of the 5th electric capacity C5 are the output of inverter.
Claims (9)
1., for a single-phase inverter for high voltage direct current, comprise counnter attack protective circuit, voltage reduction module, become the switching circuit of interchange and the control circuit of control switch circuit working for direct current; The input termination high voltage direct current outside input of counnter attack protective circuit, export the input of termination voltage reduction module and the direct-flow input end of switching circuit, the power input of the output connection control circuit of voltage reduction module, the control signal of control circuit exports the control signal input of termination switching circuit; Described switching circuit comprises the semiconductor switch device that four adopt bridge-type syndeton; Control circuit exports the pwm signal of at least one road for driving switch circuit breaker in middle break-over of device or disconnection.
2. the single-phase inverter for high voltage direct current according to claim 1, is characterized in that, described counnter attack protective circuit comprises a rectifier bridge D7, and described voltage reduction module comprises DC-DC step-down chip U2; The input of two-way high voltage direct current outside connects two inputs of rectifier bridge D7 respectively, the positive and negative output of rectifier bridge D7 connects two inputs of DC-DC step-down chip U2 respectively, electric capacity C3 is connected between the positive and negative output of rectifier bridge D7, the positive output end of step-down chip U2 exports low-voltage DC through resistance R13, electric capacity C4 is connected between one end that negative output terminal and the resistance R13 of negative output termination GND, step-down chip U2 export low-voltage DC.
3. the single-phase inverter for high voltage direct current according to claim 1, it is characterized in that, described switching circuit comprises four field effect transistor Q1-Q4, the positive output end of anti-protective circuit is taken over control in field effect transistor Q1 drain electrode, source electrode connects the first ac output end, grid connects the positive output end of voltage reduction module through resistance R2, resistance R1, diode D1, between triode Q5 collector electrode connecting resistance R1 and R2, emitter meets GND, base stage meets GND through resistance R4, and connects voltage reduction module positive output end through resistance R3, resistance R5; Electric capacity C1 anode connects between diode D1 and resistance R1, and negative electrode connects field effect transistor Q1 source electrode; Diode D2 anode connects field effect transistor Q1 source electrode, and negative electrode connects field effect transistor Q1 grid; Field effect transistor Q2 drain electrode connects the first ac output end, and source electrode meets GND, and grid connects diode D3 anode.
4. the single-phase inverter for high voltage direct current according to claim 3, it is characterized in that, anti-protective circuit positive output end is taken over control in field effect transistor Q3 drain electrode, and source electrode connects the second ac output end, and grid connects voltage reduction module positive output end through resistance R8, resistance R7, diode D4; Between triode Q6 collector electrode connecting resistance R7 and R8, emitter meets GND, and base stage meets GND through resistance R10, and connects the positive output end of voltage reduction module through resistance R9, resistance R11; Electric capacity C2 anode connects between diode D4 and resistance R7, and negative electrode connects field effect transistor Q3 source electrode; Diode D5 anode connects field effect transistor Q3 source electrode, and negative electrode connects field effect transistor Q3 grid; Field effect transistor Q4 drain electrode connects the second ac output end, and source electrode meets GND, and grid connects diode D6 anode.
5. the single-phase inverter for high voltage direct current according to claim 4, is characterized in that, with diode D6 anode between the first control signal input connecting resistance R9 and R11, and connects field effect transistor Q4 grid through resistance R12; With diode D3 anode between second control signal input connecting resistance R3 and R5, and connect field effect transistor Q2 grid through resistance R6.
6. the single-phase inverter for high voltage direct current according to claim 1, it is characterized in that, control circuit of telling comprises a pwm chip U1, the power input pin Vcc of pwm chip U1 connects the positive output end of voltage reduction module, pwm signal output pin CS1 connects the first control signal input of switching circuit, and pwm signal output pin CS2 connects the second control signal input of switching circuit.
7. the single-phase inverter for high voltage direct current according to claim 6, is characterized in that, described pwm chip U1 selects TL494C chip.
8. the single-phase inverter for high voltage direct current according to claim 7, is characterized in that, the positive output end of a termination rectifier bridge D7 of resistance R14, and the other end meets GND through resistance R5; Diode D8 negative electrode connects the positive output end of rectifier bridge D7, between anode connecting resistance R14 and resistance R15; Electric capacity C6 positive terminating diode D8 anode, negative terminal meets GND; Resistance R17 mono-terminating diode D8 anode, the first negative input pin 1IN-of another termination control chip U1; Resistance R16 mono-termination capacitor C6 negative terminal, the DTC pin of another termination control chip U1 and electric capacity C6 anode; Connect between the DTC pin of control chip U1 and CS1 pin and be connected with electric capacity C8, and be connected with electric capacity C9 between CS2 pin; The RT pin of control chip U1 meets GND through resistance R18; The CT of control chip U1 draws foot meridian capacitor C7 and meets GND; Control chip U1 first negative input pin 1IN-, second negative input pin 2IN-, Verf pin, Ctrl pin are interconnected; First positive input pin 1IN+, the second positive input pin 2IN+ of control chip U1 meet GND.
9. the single-phase inverter for high voltage direct current according to claim 1, is characterized in that, described counnter attack protective circuit comprises at least one diode or at least one rectifier bridge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420654574.6U CN204290777U (en) | 2014-11-05 | 2014-11-05 | A kind of single-phase inverter for high voltage direct current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420654574.6U CN204290777U (en) | 2014-11-05 | 2014-11-05 | A kind of single-phase inverter for high voltage direct current |
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| Publication Number | Publication Date |
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| CN204290777U true CN204290777U (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420654574.6U Expired - Fee Related CN204290777U (en) | 2014-11-05 | 2014-11-05 | A kind of single-phase inverter for high voltage direct current |
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| Country | Link |
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| CN (1) | CN204290777U (en) |
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2014
- 2014-11-05 CN CN201420654574.6U patent/CN204290777U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20150422 Termination date: 20211105 |