CN204166421U - A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio - Google Patents
A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio Download PDFInfo
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- CN204166421U CN204166421U CN201420517690.3U CN201420517690U CN204166421U CN 204166421 U CN204166421 U CN 204166421U CN 201420517690 U CN201420517690 U CN 201420517690U CN 204166421 U CN204166421 U CN 204166421U
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- depletion mode
- transistor
- mode transistor
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- reference source
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Abstract
The utility model discloses a kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio, comprise the first resistance, the second resistance, the first depletion mode transistor, the second depletion mode transistor, the 3rd depletion mode transistor, enhancement transistor and electric capacity, first resistance, the second resistance, the first depletion mode transistor, the second depletion mode transistor, the 3rd depletion mode transistor and enhancement transistor are connected successively, and the second resistance and electric capacity composition RC wave filter are connected in parallel between enhancement transistor drain electrode and source electrode.Voltage reference source circuit described in the utility model utilizes depletion mode transistor and the distinctive zero threshold current source of enhancement transistor and negative temperature coefficient threshold voltage characteristic, and RC filter construction realizes voltage reference source, be particularly suitable for the voltage reference source of high-performance power management chip, structure is simple, performance is given prominence to, and is more suitable for the requirement of the power management chip of RF field application.
Description
Technical field
The utility model relates to a kind of voltage reference source circuit of switching power source chip inside, particularly relates to a kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio.
Background technology
For a switching power source chip, the performance of internal reference voltage source determines the precision of output voltage, noisiness, the characteristics such as power consumption size and supply-voltage rejection ratio.Current advanced semiconductor processes processing procedure can provide more high precision high performance semiconductor devices, when design voltage reference source structure, can be utilized widely, to increase substantially the electric property of voltage-reference.Also can reduce simultaneously and trim circuit structure and the cost that produces.
The electric property of traditional voltage references source circuit is not ideal enough, such as: as shown in Figure 1, traditional band gap voltage reference source circuit comprises the first metal-oxide-semiconductor M1 ', the second metal-oxide-semiconductor M2 ', the first resistance R1 ', the second resistance R2 ', the 3rd resistance R3 ', the first diode D1, the second diode D2 and comparer A, the output terminal of comparer A is the cathode output end Vref of voltage reference source circuit, and this circuit exists that power consumption is higher, supply-voltage rejection ratio and the poor problem of noise suppression feature.Traditional CMOS type voltage-reference also needs to consume certain quiescent current, and general quiescent current consumption is all greater than 5 microamperes, and its power consumption is higher.
Utility model content
The purpose of this utility model is just the voltage reference source circuit providing a kind of low-power consumption low noise high power supply voltage rejection ratio in order to solve the problem.
The utility model is achieved through the following technical solutions above-mentioned purpose:
A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio, comprise the first resistance, second resistance, first depletion mode transistor, second depletion mode transistor, 3rd depletion mode transistor, enhancement transistor and electric capacity, the first end of described first resistance is the electrode input end of described voltage reference source circuit, second end of described first resistance is connected with the drain electrode of described first depletion mode transistor, the grid of described first depletion mode transistor is all connected with the drain electrode of described second depletion mode transistor with source electrode, the grid of described second depletion mode transistor is all connected with the drain electrode of described 3rd depletion mode transistor with source electrode, the grid of described 3rd depletion mode transistor and source electrode all with the drain electrode of described enhancement transistor, the grid of described enhancement transistor is connected with the first end of described second resistance, second end of described second resistance is connected with the first end of described electric capacity and as the cathode output end of described voltage reference source circuit, the source electrode of described enhancement transistor is connected with the second end of described electric capacity also simultaneously as negative input and the cathode output end of described voltage reference source circuit.
In said structure, transistor is NMOS tube, has good 1/f noise characteristic and lower noise current, by increasing the RC wave filter be made up of the second resistance and electric capacity, the noise that its structure is produced is low-frequency noise, in 100uV/sqrt (Hz) left and right.
The beneficial effects of the utility model are:
Voltage reference source circuit described in the utility model utilizes depletion mode transistor and the distinctive zero threshold current source of enhancement transistor and negative temperature coefficient threshold voltage characteristic, and RC filter construction realizes voltage reference source, be particularly suitable for the voltage reference source of high-performance power management chip, structure is simple, performance is given prominence to, the supply voltage that especially can also meet 30dB at high-frequency region 10MHz place suppresses, and is more suitable for the requirement of the power management chip of RF field application.
Accompanying drawing explanation
Fig. 1 is traditional bandgap reference source circuit structural drawing;
Fig. 2 is the circuit diagram of voltage reference source circuit described in the utility model;
Fig. 3 is depletion type NMOS and enhancement mode NMOS threshold voltage temperature coefficient figure;
Fig. 4 is the temperature characteristics of voltage-reference described in the utility model;
Fig. 5 is the power voltage rejection ratio characteristic curve of voltage-reference described in the utility model;
Fig. 6 is the noisiness curve of voltage-reference described in the utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
As shown in Figure 2, the voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio described in the utility model comprises the first resistance R1, second resistance R2, first depletion mode transistor M1, second depletion mode transistor M2, 3rd depletion mode transistor M3, enhancement transistor M4 and electric capacity C, the first end of the first resistance R1 is the electrode input end Vcc of described voltage reference source circuit, second end of the first resistance R1 is connected with the drain electrode of the first depletion mode transistor M1, the grid of the first depletion mode transistor M1 is all connected with the drain electrode of the second depletion mode transistor M2 with source electrode, the grid of the second depletion mode transistor M2 is all connected with the drain electrode of the 3rd depletion mode transistor M3 with source electrode, the grid of the 3rd depletion mode transistor M3 and source electrode all with the drain electrode of enhancement transistor M4, the grid of enhancement transistor M4 is connected with the first end of the second resistance R2, second end of the second resistance R2 is connected with the first end of electric capacity C and as the cathode output end Vref of described voltage reference source circuit, the source electrode of enhancement transistor M4 is connected also simultaneously as negative input and the cathode output end of described voltage reference source circuit with second end of electric capacity C, illustrate with ground connection in figure.
The principle of work of this voltage reference source circuit is as follows: depletion mode transistor (being N channel depletion type MOSFET in the utility model) applies ion implantation in the fabrication process in advance on the surface of substrate, conducting channel is manufactured between drain D, grid S, be referred to as original trench, its principle is the SiO of side under the gate
2a large amount of positive metal ions is mixed with in insulation course.So work as V
gSwhen=0, these positive ions induce inversion layer, define raceway groove, so, as long as there is drain-source voltage, just there is drain current to exist; Work as V
gSduring > 0, ID will be made to increase further; V
gSduring < 0, along with the reduction drain current of VGS reduces, gradually until ID=0.The V of corresponding ID=0
gSbe called pinch-off voltage, use symbol V
gS(off) represent, sometimes also use V
prepresent.According to the characteristic principle of depletion mode transistor, only need by its grid and source shorted, i.e. V
gS=0, there is conducting channel and certain equiva lent impedance in depletion mode transistor now, can be equivalent to the current source that has variable resistor effect.In variable resistor district, i
dwith V
gS, V
dSpass be:
i
D＝K[2(V
GS-U
p)V
DS-V
DS 2]≈K(V
GS-U
P)
2
Work as V
gSwhen=0, i
d≈ KU
p 2, wherein
For enhancement mode nmos pass transistor, this devices function in saturation region, i
dwith V
gS, V
dSpass be:
I
d=K'(V
gS-V
tH)
2, wherein
v
tHfor the threshold voltage of enhancement mode nmos pass transistor.
Because depletion mode transistor is connected with enhancement transistor, the electric current flowing through enhancement mode nmos pass transistor provides for depletion mode transistor, the drain-to-gate voltage of reference voltage and enhancement mode nmos pass transistor, and relational expression is:
Visible, reference voltage V
refby K expression formula and the threshold voltage V of two type transistors
tH, U
pdetermine.The semiconductor technology that this patent structure uses, the threshold voltage of depletion type NMOS is negative temperature coefficient, and the threshold voltage of enhancement mode NMOS is positive temperature coefficient (PTC), as shown in Figure 3.Pass through the breadth length ratio of adjusting device in the design process with the requirement of satisfied temperature compensating proportion, realize the voltage-reference of zero-temperature coefficient.As shown in Figure 4, be the temperature characteristics of voltage-reference.
As shown in Figure 5, when low frequency, supply-voltage rejection ratio determines primarily of the partial pressure effects of series impedance the power voltage rejection ratio characteristic curve of this patent novel voltage reference source circuit, and principle is as follows: as depletion mode transistor V
gSwhen=0, i
d≈ KU
p 2.Wherein
equivalence conduction impedance
the breadth length ratio that three series connection exhaust pipe is all consistent with type.The equiva lent impedance of enhancement mode NMOS tube is
then supply-voltage rejection ratio
The noisiness curve of this patent novel voltage reference source circuit as shown in Figure 6, in this circuit structure, because the grid of depletion type NMOS is connected with source electrode, substrate terminal is connected with source, grid gain and the backgate gain of this device are negligible, and namely the contribution of 1/f noise electric current at low frequency can be considered.And enhancement mode nmos pass transistor is maximum for the contribution of low frequency 1/f noise and thermonoise, the equivalent output noise voltage relationship of reference voltage before device is after filtering:
Illustrate: above-mentioned principle of work is inherent characteristic based on depletion mode transistor and enhancement transistor and is described, to prove progressive of the present utility model, not technological innovation of the present utility model.
Above-described embodiment is preferred embodiment of the present utility model; it is not the restriction to technical solutions of the utility model; as long as without the technical scheme that creative work can realize on the basis of above-described embodiment, all should be considered as falling within the scope of the rights protection of the utility model patent.
Claims (1)
1. the voltage reference source circuit of a low-power consumption low noise high power supply voltage rejection ratio, it is characterized in that: comprise the first resistance, second resistance, first depletion mode transistor, second depletion mode transistor, 3rd depletion mode transistor, enhancement transistor and electric capacity, the first end of described first resistance is the electrode input end of described voltage reference source circuit, second end of described first resistance is connected with the drain electrode of described first depletion mode transistor, the grid of described first depletion mode transistor is all connected with the drain electrode of described second depletion mode transistor with source electrode, the grid of described second depletion mode transistor is all connected with the drain electrode of described 3rd depletion mode transistor with source electrode, the grid of described 3rd depletion mode transistor and source electrode all with the drain electrode of described enhancement transistor, the grid of described enhancement transistor is connected with the first end of described second resistance, second end of described second resistance is connected with the first end of described electric capacity and as the cathode output end of described voltage reference source circuit, the source electrode of described enhancement transistor is connected with the second end of described electric capacity also simultaneously as negative input and the cathode output end of described voltage reference source circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420517690.3U CN204166421U (en) | 2014-09-10 | 2014-09-10 | A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420517690.3U CN204166421U (en) | 2014-09-10 | 2014-09-10 | A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio |
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| Publication Number | Publication Date |
|---|---|
| CN204166421U true CN204166421U (en) | 2015-02-18 |
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|---|---|---|---|
| CN201420517690.3U Expired - Fee Related CN204166421U (en) | 2014-09-10 | 2014-09-10 | A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110134175A (en) * | 2018-02-08 | 2019-08-16 | 艾普凌科有限公司 | Reference voltage circuit and semiconductor device |
| CN110224831A (en) * | 2019-05-08 | 2019-09-10 | 深圳大学 | A kind of high reliability physics unclonable function circuit based on four tube voltage a reference sources |
| CN112947659A (en) * | 2021-02-22 | 2021-06-11 | 北京迪浩永辉技术有限公司 | Band-gap voltage reference circuit applied to 1/f noise of MEMS (micro-electromechanical systems) inertial device |
| CN115037150A (en) * | 2022-06-10 | 2022-09-09 | 西安博瑞集信电子科技有限公司 | Voltage stabilizing circuit for gallium arsenide circuit and radio frequency circuit adopting same |
| CN115202430A (en) * | 2021-04-13 | 2022-10-18 | 拓尔微电子股份有限公司 | Reference voltage generating circuit and oscillator |
| CN115220517A (en) * | 2021-04-19 | 2022-10-21 | 中国科学院微电子研究所 | Reference voltage generating circuit based on PMOS temperature compensation characteristic and design method and device |
| CN115220518A (en) * | 2021-04-19 | 2022-10-21 | 中国科学院微电子研究所 | Reference voltage generating circuit based on NMOS temperature compensation characteristic and design method and device |
-
2014
- 2014-09-10 CN CN201420517690.3U patent/CN204166421U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110134175A (en) * | 2018-02-08 | 2019-08-16 | 艾普凌科有限公司 | Reference voltage circuit and semiconductor device |
| CN110134175B (en) * | 2018-02-08 | 2022-05-03 | 艾普凌科有限公司 | Reference voltage circuit and semiconductor device |
| CN110224831A (en) * | 2019-05-08 | 2019-09-10 | 深圳大学 | A kind of high reliability physics unclonable function circuit based on four tube voltage a reference sources |
| CN112947659A (en) * | 2021-02-22 | 2021-06-11 | 北京迪浩永辉技术有限公司 | Band-gap voltage reference circuit applied to 1/f noise of MEMS (micro-electromechanical systems) inertial device |
| CN112947659B (en) * | 2021-02-22 | 2022-04-12 | 北京迪浩永辉技术有限公司 | Band-gap voltage reference circuit applied to 1/f noise of MEMS (micro-electromechanical systems) inertial device |
| CN115202430A (en) * | 2021-04-13 | 2022-10-18 | 拓尔微电子股份有限公司 | Reference voltage generating circuit and oscillator |
| CN115202430B (en) * | 2021-04-13 | 2024-05-24 | 拓尔微电子股份有限公司 | Reference voltage generating circuit and oscillator |
| CN115220517A (en) * | 2021-04-19 | 2022-10-21 | 中国科学院微电子研究所 | Reference voltage generating circuit based on PMOS temperature compensation characteristic and design method and device |
| CN115220518A (en) * | 2021-04-19 | 2022-10-21 | 中国科学院微电子研究所 | Reference voltage generating circuit based on NMOS temperature compensation characteristic and design method and device |
| CN115220517B (en) * | 2021-04-19 | 2024-01-16 | 中国科学院微电子研究所 | Reference voltage generating circuit based on PMOS temperature compensation characteristic and design method and device |
| CN115220518B (en) * | 2021-04-19 | 2024-03-12 | 中国科学院微电子研究所 | Reference voltage generating circuit based on NMOS temperature compensation characteristic and design method and device |
| CN115037150A (en) * | 2022-06-10 | 2022-09-09 | 西安博瑞集信电子科技有限公司 | Voltage stabilizing circuit for gallium arsenide circuit and radio frequency circuit adopting same |
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Granted publication date: 20150218 Termination date: 20160910 |
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| CF01 | Termination of patent right due to non-payment of annual fee |