CN204067370U - Wide band gap semiconductor device - Google Patents
Wide band gap semiconductor device Download PDFInfo
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- CN204067370U CN204067370U CN201420436988.1U CN201420436988U CN204067370U CN 204067370 U CN204067370 U CN 204067370U CN 201420436988 U CN201420436988 U CN 201420436988U CN 204067370 U CN204067370 U CN 204067370U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a kind of wide band gap semiconductor device, belongs to technical field of semiconductor preparation.It solve the problem of easy thermal expansion effects in existing wide band gap semiconductor device.This wide band gap semiconductor device comprises the base using the chip that semiconductor material with wide forbidden band is substrate to make with use semiconductor material with wide forbidden band, and on described base, be provided with the groove structure of chip placement.The chip substrate of wide band gap semiconductor device of the present utility model and base all adopt semiconductor material with wide forbidden band to make, and can reach the object of quick heat radiating; Simultaneously because thermal coefficient of expansion and coefficient of heat transfer are substantially identical, therefore the various materials increasing adjustment thermal coefficient of expansion on bottom or accessory are not needed, greatly simplify wide band gap semiconductor device structure, reduce the impact of thermal expansion, improve stability.
Description
Technical field
The utility model belongs to technical field of semiconductor preparation, relates to a kind of semiconductor device, particularly a kind of wide band gap semiconductor device using semiconductor material with wide forbidden band to make.
Background technology
Semiconductor material with wide forbidden band refers to that energy gap is more than or equal to the semi-conducting material of 2.3eV, and it is called as third generation semi-conducting material.Mainly comprise diamond, carborundum, gallium nitride etc.Compare with the first generation, second generation semi-conducting material, it is large that third generation semi-conducting material has energy gap, and electron drift saturated velocity is high, dielectric constant is little, the feature that conducts electricity very well, itself has superior character and potential huge prospect.
In existing chip technology, the bottom of chip need to be connected successively copper heat dissipating layer, insulating barrier, copper heat dissipating layer, be welded to connect layer and copper heat dissipating layer, in order to increase thermal diffusivity, also need the fin that is finally connected, these insulating barriers and metallic radiating layer are requisite radiator structures in semiconductor device, arranging insulating barrier is to draw both positive and negative polarity, and the heat dissipating layer of multilayer is the radiating efficiency in order to ensure chip.
Although wide band gap semiconductor device has good application prospect, the wide band gap semiconductor device of existing use wide-band gap material, due to the high price of backing material, thus causes the speed popularized very slow.In addition, the substrate of insulating barrier and copper heat dissipating layer and chip adopts different materials, and its coefficient of thermal expansion is different.Therefore semiconductor device or module need the thermal coefficient of expansion and the coefficient of heat transfer that adjust accessory, and cause semiconductor device or module to become complex structure and high price, reliability is not high.Because wide band gap semiconductor device can normally can work under the high temperature of 350 degree Celsius, but under the high/low temperature of switch, the thermal fatigue of the accessory of semiconductor device and the reliability of existing semiconductor device is significantly reduced, the life-span shortening device even can not realize industrialization.
Summary of the invention
There are the problems referred to above in the utility model for prior art, propose a kind of wide band gap semiconductor device, technical problem to be solved in the utility model is that the impact how eliminating each several part thermal expansion difference opposite sex in wide band gap semiconductor device improves its heat dispersion simultaneously.
The utility model is realized by following technical proposal: a kind of wide band gap semiconductor device, it is characterized in that, comprise and use the chip that semiconductor material with wide forbidden band is substrate and the base using semiconductor material with wide forbidden band to make, and on described base, be provided with the groove structure of chip placement.
The substrate of this wide band gap semiconductor device chips adopts semiconductor material with wide forbidden band to make, and base also adopts semiconductor material with wide forbidden band to make, so only, a base just can replace existing insulating barrier and multiple metal level, realize the dual-use function of insulation and heat radiation, structure is simplified greatly, simultaneously because the substrate of chip and base all adopt semiconductor material with wide forbidden band to make, both coefficient of heat transfers are identical with thermal coefficient of expansion or close, eliminate the problem that in wide band gap semiconductor device, each several part thermal expansion coefficient difference is large, do not need to make special matched coefficients of thermal expansion process to base, understructure is simplified.Base arranges the groove of chip placement, can the position of quick and precisely positioning chip by this groove, simultaneously also can be fixed by chip.
In above-mentioned wide band gap semiconductor device, connected between described base and chip by heat-conducting layer, described heat-conducting layer is by metal sinteredly forming or fixing by being welded to connect of being filled in groove structure place.Carry out heat trnasfer by the heat-conducting layer between base and chip and can realize heat sinking function, the radiating effect of this wide band gap semiconductor device can be ensured.Can adopt by metal sintered at this groove structure place, spot welding, Reflow Soldering etc. also can be adopted to be welded, and groove structure can play heat-conducting layer and limit position effect, limit the degree of freedom of its surrounding, above-mentioned connected mode is solid and reliable, and not easily sliding comes off, and also facilitates fixed chip.
In above-mentioned wide band gap semiconductor device, heat-conducting layer has conductivity.Heat-conducting layer also has good conductivity while heat conduction and heat radiation, can simplify the structure of semiconductor device.
In above-mentioned wide band gap semiconductor device, metal powder is the argent of powdery.Heat-conducting layer is preferably argent and makes, because silver has higher cost performance, use the heat conductivility of the metals such as tin, copper, aluminium not have silver good, and gold is expensive, use cost is high.Use the particle diameter of its particle during silver powder the smaller the better, the particle diameter of silver powder is when Nano grade, and compared with the silver powder of micron level, the temperature of sintering can decline 30 DEG C ~ 80 DEG C.
In above-mentioned wide band gap semiconductor device, the thickness of described heat-conducting layer is 10 μm ~ 75 μm.Should ensure radiating effect, that also will consider heat-conducting layer makes cost, comprehensive consideration, and the cost performance of this thickness is high, can meet the requirements.
In above-mentioned wide band gap semiconductor device, the backing material of described chip and the material of described base contain identical chemical composition.The chemical composition of wide-band gap material is identical, ensure that thermal coefficient of expansion and coefficient of heat transfer are substantially identical, in radiation processes, can not as there is phenomenons such as causing that distortion comes off by the coefficient of thermal expansion that unlike material is different affects as the prior art, do not need the material increasing adjustment thermal expansion in addition, can this semiconductor device be simplified yet.
In above-mentioned wide band gap semiconductor device, described base comprises conductivity wide-band gap material layer and half insulation wide-band gap material layer, conductivity wide-band gap material layer and half insulation wide-band gap material ply or multilayer alternately stacked.The conductivity wide-band gap material layer of base ensure that its electric conductivity, and chip is normally used, and half insulation wide-band gap material layer plays the effect intercepting electric current, and differentiation the two poles of the earth, prevent short circuit.Adopt the alternately stacked mode of multilayer can strengthen radiating effect further.
Conductivity wide-band gap material makes wide-band gap material have conductivity, for the making of chip by the element such as doping process doped with boron, nitrogen in semiconducter process; Half insulation wide-band gap material can be the carborundum, gallic oxide etc. of half insulation.
In above-mentioned wide band gap semiconductor device, the substrate of described chip adopts conductivity wide-band gap material to make, and described base adopts half insulation wide-band gap material to make, and is connected between the substrate of described chip and described base by described heat-conducting layer.Heat-conducting layer can be chip conductive and transmit and distribute heat.
In above-mentioned wide band gap semiconductor device, be provided with between described conductivity wide-band gap material layer and half insulation wide-band gap material layer and can conduct electricity and/or the conductor of heat conduction.This conductor effectively can ensure heat conducting continuation and stability on base, also may be used for conductivity.Can also use as drawing negative or positive electrode simultaneously.
In above-mentioned wide band gap semiconductor device, described chip bottom has the chip metal coating of conductivity, and described chip metal coating has concaveconvex structure.Connect chip and heat-conducting layer by chip metal coating, thus chip is electrically connected with base, the forming position of chip electrode is changed, enables to play radiating effect better by heat-conducting layer, to such an extent as in all case can both high efficiencyly dispel the heat; Chip metal coating has concaveconvex structure can increase contact area, improves conductivity and heat conducting effect.This chip metal coating can adopt silver-plated or gold-plated or nickel plating, and it conducts electricity very well.
In above-mentioned wide band gap semiconductor device, the concaveconvex structure of described chip metal coating is be evenly distributed on the pit of chip metal coating surface or the hangnail for the evagination that is evenly distributed on chip metal coating surface.Adopt the hangnail of pit separately or evagination to reach to increase contact area and chip and base contacts more firmly acted on, other variant can certainly be adopted to realize this purpose, its effect basic.
In above-mentioned wide band gap semiconductor device, the outward-dipping setting of inner side cell wall of described groove structure, forms the groove shapes that the large bottom land of notch is little.As the angle be obliquely installed, the vertical plane of relative 90 degree, outward-dipping angle is within 10 degree, comprises 10 degree.The best is 8 degree.Adopt the little groove shapes of the large bottom land of notch to be convenient to fill metal powder in groove structure, to facilitate follow-up being sintered to fix, be also convenient to be welded and fixed.This angle of inclination is preferably 8 °, and the contact area of heat radiation heat-conducting layer and wide bandgap semiconductor chip is large, is convenient to transmit timely and distribute heat, can ensure that the radiating effect of heat radiation heat-conducting layer is unaffected.
As the first scheme of groove structure, in above-mentioned wide band gap semiconductor device, described groove structure comprises and is opened in groove on base and excess metal conductor, and the conductor filled full groove of described excess metal is also extended down to outside groove outward, and excess metal conductor offers conductor recesses.The conductor filled full groove of excess metal is to notch, ensure that the firm stable of base conductor, this excess metal conductor can play conductivity effect, and the contact area of this excess metal conductor and base is large, the enough stable of conductivity can be ensured, also ensure that stability and the high efficiency of radiating effect; Excess metal conductor is also formed with same conductor recesses, is convenient to the fixed installation of heat-conducting layer, increase fastness.
In above-mentioned wide band gap semiconductor device, the surface of described excess metal conductor has concaveconvex structure.This concaveconvex structure can increase contact area, improves conductivity and heat conducting effect.
As the first scheme of groove structure, in above-mentioned wide band gap semiconductor device, bottom and the inner side cell wall of part or all of described groove structure are coated with excess metal coating, are extended down to the susceptor surface of groove structure notch periphery outside described excess metal coating.The inner side cell wall of groove structure and the area of base are large, are plated excess metal coating, can improve chip by the conductivity of heat-conducting layer and base and heat trnasfer, make full use of contact-making surface to ensure the stability of conductivity and heat trnasfer.Identical with the first scheme effect above-mentioned, this excess metal coating can play conductivity effect, also ensure that stability and the high efficiency of radiating effect; This excess metal coating only covers recess sidewall and bottom simultaneously, and thickness is thin, can save the making material of excess metal coating, thus saves production cost.
In above-mentioned wide band gap semiconductor device, described excess metal coating is for one or more layers and surperficial one deck excess metal coating has concaveconvex structure.This concaveconvex structure also can increase contact area, improves conductivity and heat conducting effect, also can increase the fastness be connected with miscellaneous part.
In above-mentioned wide band gap semiconductor device, by the bottom of described chip, outward-dipping extension between the position a of arrival base bottom and base outward flange b has a segment distance L.According to diffusion zone and the scope of heat conduction, such setting can ensure heat conducting regional extent, thus ensures radiating effect.If inclination extension can not arrive base bottom, then heat can be accumulated in the sidepiece of base and can not be distributed by base bottom in time.
In above-mentioned wide band gap semiconductor device, the outward-dipping range of tilt angles extending arrival base bottom in the bottom of described chip is 25 ° ~ 65 °.Heat is when transmitting to surrounding, it is mainly guided to pass through heat-conducting layer going down, in order to ensure its heat-transfer effect, base edge is enough large, ensure heat radiation, according to the comprehensive consideration made cost, take up room of radiating effect, set such reference angle from the direction of heat trnasfer, reach higher cost performance, in this angular range, be preferably 45 °.
In above-mentioned wide band gap semiconductor device, by the bottom of described chip, outward-dipping extension between the position c of arrival base upper surface and excess metal coating outward flange d has a segment distance L '.According to diffusion zone and the scope of heat conduction, carrying out smoothly of heat radiation can be ensured like this, reach good radiating effect.
As the improvement of base, in above-mentioned wide band gap semiconductor device, base bottom is provided with fin.After the heat that wide bandgap semiconductor chip produces is delivered to base, then distributed in time by fin, keep chip to be operated in normal temperature levels, reliability and the useful life of device also significantly improve.
In above-mentioned wide band gap semiconductor device, semiconductor material with wide forbidden band is carborundum.
Compared with prior art, the chip substrate of wide band gap semiconductor device of the present utility model and base all adopt semiconductor material with wide forbidden band to make, the heat that chip produces can be transferred on base and distribute, adopts the semiconductor material with wide forbidden band of perfect heat-dissipating can reach the object of quick heat radiating; Simultaneously because thermal coefficient of expansion and coefficient of heat transfer are substantially identical, therefore the various materials increasing adjustment thermal coefficient of expansion on bottom or accessory are not needed, greatly simplify wide band gap semiconductor device structure, reduce the impact of thermal expansion, improve stability; Chip is fixed on base by the groove on base, can quick and precisely locate, simultaneously also can be fixed.The heat conduction that chip can both produce by the excess metal coating in groove or excess metal conductor, to outside chip, has the effect improving chip cooling.
Accompanying drawing explanation
Fig. 1 is the perspective view of this wide band gap semiconductor device;
Fig. 2 is the perspective view of base in this wide band gap semiconductor device;
Fig. 3 is the cross section structure schematic diagram in embodiment one after wide band gap semiconductor device sintering;
Fig. 4 is the rear cross section structure schematic diagram of wide band gap semiconductor device sintering in embodiment two;
Fig. 5 is the schematic cross-section of wide band gap semiconductor device in embodiment three;
Fig. 6 is the schematic cross-section in embodiment four before wide band gap semiconductor device sintering;
Fig. 7 is the schematic cross-section in embodiment five before wide band gap semiconductor device sintering;
Fig. 8 is the perspective view of wide band gap semiconductor device in embodiment six.
In figure, 1, chip; 2, base; 21, conductivity wide-band gap material layer; 22, half insulation wide-band gap material layer; 3, heat-conducting layer; 4, groove structure; 41, groove; 42, excess metal coating; 43, excess metal conductor; 44, conductor recesses; 5, chip metal coating; 6, fin.
Embodiment
Be below specific embodiment of the utility model, and by reference to the accompanying drawings the technical solution of the utility model be further described, but the utility model is not limited to these embodiments.
Embodiment one
As depicted in figs. 1 and 2, this wide band gap semiconductor device comprises the base 2 using the chip 1 that semiconductor material with wide forbidden band is substrate to make with use semiconductor material with wide forbidden band, and on base 2 groove structures 4 being provided with chip placement 1, and the material of the backing material of chip and base contains identical chemical composition.The substrate of chip 1 and base 2 all adopt the carborundum in semiconductor material with wide forbidden band to make, and the heat that chip 1 produces can be transferred on base 2 and distributes, and base 2 adopts the carborundum semiconductor material with wide forbidden band of perfect heat-dissipating can quick heat radiating; Simultaneously because thermal coefficient of expansion is substantially identical, therefore the various materials increasing adjustment hot expansion system on the bottom or accessory of chip 1 are not needed, greatly simplify wide band gap semiconductor device structure, reduce the impact of thermal expansion, improve the stability of its heat conduction and conduction; Chip 1 is fixed on base 2 by the groove structure 4 on base, can quick and precisely locate, simultaneously also can be fixed.Position and the thickness of sintering heat-conducting layer 3 can be controlled when sintering by the position of adjusting grooves structure 4 and the degree of depth.
Specifically, as shown in Figures 2 and 3, the outward-dipping setting of inner side cell wall of groove structure 4, form the groove shapes that the large bottom land of notch is little, as the angle be obliquely installed, the vertical plane of relative 90 degree, the outward-dipping angle [alpha] of inner side cell wall of groove structure 4 is 8 degree, as the situation of common product, tilt angle alpha within 10 degree, can comprise 10 degree.Bottom and whole inner side cell walls of groove structure 4 are coated with excess metal coating 42, are extended down to base 2 surface of groove structure 4 notch periphery outside excess metal coating 42.Excess metal coating 42 adopts ag material coating.Product instead, groove structure 4 can be that bottom and part inner side cell wall are coated with excess metal coating 42, i.e. one, two or three sides of four sides.
As shown in Figure 2, the substrate of chip 1 adopts conductivity wide-band gap material to make, and base 2 adopts half insulation wide-band gap material to make, and is connected between chip 1 and base 2 by heat-conducting layer 3, and heat-conducting layer 3 is formed by the silver powder sintering being filled in groove structure 4 place.Position and the thickness of sintering heat-conducting layer 3 can be controlled when sintering by the position of adjusting grooves structure 4 and the degree of depth.Except sintering processing, welding manner can also be adopted to be connected by heat-conducting layer 3, and concrete welding manner can be spot welding or Reflow Soldering.The thickness of heat-conducting layer 3 is 20 μm, and as ordinary circumstance, the thickness of heat-conducting layer 3 can be arbitrary value in 10 μm ~ 75 μm.As shown in Figure 2, the bottom of chip 1 start outward-dipping extend to arrive between position a bottom base 2 and base 2 outward flange b there is a segment distance L, the outward-dipping angle of inclination beta arrived bottom base 2 that extends in the bottom of chip 1 is 45 °, as ordinary circumstance, it also can be arbitrary value in 25 ° ~ 65 °.By the bottom of chip 1, outward-dipping extension between the position c of arrival base 2 upper surface and excess metal coating 42 outward flange d has a segment distance L '.Heat can be made to reach bottom instead of be gathered in the centre of base sidepiece and can not distribute in time by this structure.
The heat-conducting layer 3 of the present embodiment further groove structure 4 preferably adopts argent, the particle diameter of its particle is the smaller the better, the particle diameter of silver powder is when Nano grade, and compared with the silver powder of micron level, the temperature of sintering can decline 30 DEG C ~ 80 DEG C, this groove structure 4 can play well location and fixation, heat-conducting layer 3 and chip 1 are installed in this groove structure 4 place, location is precisely convenient, limits the degree of freedom of its surrounding simultaneously, solid and reliable, not easily slide and come off; Heat-conducting layer adopts the heat conductivility of argent and conducts electricity very well, and can ensure the radiating effect of chip 1 when connecting base 2 and chip 1.Such scheme decreases the generation of metal fever fatigue in wide band gap semiconductor device, makes its good heat resistance, while its heat dispersion of raising, also ensure that its conductivity.The material of the former coefficient of expansion in order to adjust various accessory significantly reduces by it, make structure very brief, and the thermal coefficient of expansion of the material of various accessory use is all after Matching and modification, even if at high temperature, reliability also significantly improves, and significantly reduces cost simultaneously.Use formation of the present utility model, structure, material, not how are the substrate of die 1, the conductivity of base 2 and insulating properties, also combine howsoever, all can provide the highest heat dissipation characteristics, and owing to not needing the integration of thermal coefficient of expansion, useful life and the reliability of device significantly improve.
Embodiment two
As shown in Figure 3, the content of the present embodiment is substantially identical with embodiment one, and difference is, the bottom of chip 1 has the chip metal coating 5 of conductivity; Chip metal coating 5 has concaveconvex structure.The concaveconvex structure of chip metal coating 5 is the pit being evenly distributed on chip metal coating 5 surface, adopt pit separately to reach to increase contact area that chip 1 is contacted with base 2 more firmly to act on, other the variant such as hangnail of the evagination being evenly distributed on chip metal coating 5 surface can certainly be adopted to realize this purpose, and concaveconvex structure can improve conductivity and heat conducting effect.Same, the excess metal coating 42 on base is for one deck and excess metal coating 42 has concaveconvex structure, and concaveconvex structure is the pit being evenly distributed on excess metal coating 42 surface.Certainly above-mentioned concaveconvex structure also can adopt uneven distribution.
Embodiment three
As shown in Figure 5, the content of the present embodiment substantially with embodiment one or embodiment two identical, difference is, as shown in Figure 5, difference is, excess metal coating 42 is for multilayer and surperficial one deck excess metal coating 42 has concaveconvex structure, and concaveconvex structure is the pit being evenly distributed on excess metal coating 42 surface.Adopt pit separately to reach to increase contact area that chip 1 is contacted with base 2 more firmly to act on, other the variant such as the hangnail of the evagination being evenly distributed on excess metal coating 42 surface can certainly be adopted to realize this purpose, and its effect is basic the same.Conductivity and heat conducting effect can be improved.
Embodiment four
As shown in Figure 6, the present embodiment and embodiment one or embodiment two or embodiment three substantially identical, difference is, base 2 comprises conductivity wide-band gap material layer 21 and half insulation wide-band gap material layer 22, conductivity wide-band gap material layer 21 and half insulation wide-band gap material layer 22 are overlapping or multilayer is alternately stacked, be provided with one deck between conductivity wide-band gap material layer 21 and half insulation wide-band gap material layer 22 can conduct electricity and the conductor of heat conduction, by heat-conducting layer 3, half insulation wide-band gap material layer 22 and conductivity wide-band gap material layer 21 weaken conductivity successively and can accelerate radiating effect, conductivity wide-band gap material layer 21 and half insulation wide-band gap material layer 22 between overlapping part be provided with conductor, this conductor effectively can ensure that heat that chip produces is rapidly by half insulation wide-band gap material layer 22 and conductivity wide-band gap material layer 21, in present stage, the cost of conductivity wide-band gap material is lower than the cost of half insulation wide-band gap material, and the present embodiment effectively can reduce the cost of broad stopband device.
Embodiment five
As shown in Figure 7, the present embodiment and embodiment one or embodiment two or embodiment three or embodiment four substantially identical, difference is, as the first scheme of groove structure 4, groove structure 4 comprises and is opened in groove 41 on base 2 and excess metal conductor 43, the full groove 41 of excess metal conductor 43 filling is also outer to be extended down to outside groove 41, excess metal conductor 43 offers conductor recesses 44, the floor height of conductor recesses 44 is higher than base 2 surface, and the surface of excess metal conductor 43 has concaveconvex structure.The conductor filled full groove of excess metal is to notch, ensure that the firm stable of base conductor, this excess metal conductor 43 can play conductivity effect, this excess metal conductor 43 is large with the contact area of base 2, the enough stable of conductivity can be ensured, also ensure that stability and the high efficiency of radiating effect; Excess metal conductor 43 is also formed same conductor recesses 44, is convenient to the fixed installation of heat-conducting layer 3, increase fastness.This concaveconvex structure can increase contact area, improves conductivity and heat conducting effect.
Embodiment six
The present embodiment and any one in embodiment one to five are substantially identical, difference is, as shown in Figure 8, fin 6 is provided with bottom base 2, after the heat that chip 1 produces is delivered to base 2, distributed in time by fin 6, keep the working temperature of chip 1 to be in normal level, reliability and the useful life of device also significantly improve again.
Specific embodiment described herein is only to the explanation for example of the utility model spirit.The utility model person of ordinary skill in the field can make various amendment or supplements or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present utility model or surmount the scope that appended claims defines.
Claims (21)
1. a wide band gap semiconductor device, it is characterized in that, comprise and use the chip (1) that semiconductor material with wide forbidden band is substrate and the base (2) using semiconductor material with wide forbidden band to make, and on described base (2), be provided with the groove structure (4) of chip placement (1).
2. wide band gap semiconductor device according to claim 1, it is characterized in that, connected by heat-conducting layer (3) between described base (2) and chip (1), described heat-conducting layer (3) is by metal sinteredly forming or fixing by being welded to connect of being filled in groove structure (4) place.
3. wide band gap semiconductor device according to claim 2, is characterized in that, described heat-conducting layer (3) has conductivity.
4. the wide band gap semiconductor device according to Claims 2 or 3, is characterized in that, metal powder is the argent of powdery.
5. the wide band gap semiconductor device according to Claims 2 or 3, is characterized in that, the thickness of described heat-conducting layer (3) is 10 μm ~ 75 μm.
6. wide band gap semiconductor device according to claim 1, is characterized in that, the backing material of described chip (1) and the material of described base (2) contain identical chemical composition.
7. the wide band gap semiconductor device according to claim 1 or 2 or 3, it is characterized in that, described base (2) comprises conductivity wide-band gap material layer (21) and half insulation wide-band gap material layer (22), and conductivity wide-band gap material layer (21) and half insulation wide-band gap material layer (22) are overlapping or multilayer is alternately stacked.
8. the wide band gap semiconductor device according to Claims 2 or 3, it is characterized in that, the substrate of described chip (1) adopts conductivity wide-band gap material to make, described base (2) adopts half insulation wide-band gap material to make, and is connected between the substrate of described chip (1) and described base (2) by described heat-conducting layer (3).
9. wide band gap semiconductor device according to claim 7, is characterized in that, is provided with one deck and can conducts electricity and the conductor of heat conduction between described conductivity wide-band gap material layer (21) and half insulation wide-band gap material layer (22).
10. the wide band gap semiconductor device according to Claims 2 or 3, it is characterized in that, described chip (1) bottom has the chip metal coating (5) of conductivity, and described chip metal coating (5) has concaveconvex structure.
11. wide band gap semiconductor devices according to claim 10, it is characterized in that, the concaveconvex structure of described chip metal coating (5) is for being evenly distributed on the pit on chip metal coating (5) surface or the hangnail for being evenly distributed on the surperficial evagination of chip metal coating (5).
12. wide band gap semiconductor devices according to claim 1 or 2 or 3, is characterized in that, the outward-dipping setting of inner side cell wall of described groove structure (4), form the groove shapes that the large bottom land of notch is little.
13. wide band gap semiconductor devices according to claim 12, it is characterized in that, bottom and the inner side cell wall of part or all of described groove structure (4) are coated with excess metal coating (42), are extended down to base (2) surface of groove structure (4) notch periphery outside described excess metal coating (42).
14. wide band gap semiconductor devices according to claim 13, is characterized in that, described excess metal coating (42) is for one or more layers and one deck excess metal coating (42) on surface has concaveconvex structure.
15. wide band gap semiconductor devices according to claim 12, it is characterized in that, described groove structure (4) comprises and is opened in groove (41) on base (2) and excess metal conductor (43), described excess metal conductor (43) is filled full groove (41) and is extended down to groove (41) outward outward, and excess metal conductor (43) offers conductor recesses (44).
16. wide band gap semiconductor devices according to claim 15, is characterized in that, the surface of described excess metal conductor (43) has concaveconvex structure.
17. wide band gap semiconductor devices according to claim 1 or 2 or 3, it is characterized in that, by the bottom of described chip (1), outward-dipping extension between the position a of arrival base (2) bottom and base (2) outward flange b has a segment distance L.
18. wide band gap semiconductor devices according to claim 17, is characterized in that, the outward-dipping range of tilt angles arrived bottom base (2) that extends in the bottom of described chip (1) is 25 ° ~ 65 °.
19. wide band gap semiconductor devices according to claim 13, it is characterized in that, by the bottom of described chip (1), outward-dipping extension between the position c of arrival base (2) upper surface and excess metal coating (42) outward flange d has a segment distance L '.
20. wide band gap semiconductor devices according to claim 1 or 2 or 3, is characterized in that, base (2) bottom is provided with fin (6).
21. wide band gap semiconductor devices according to claim 1 or 2 or 3, it is characterized in that, semiconductor material with wide forbidden band is carborundum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420436988.1U CN204067370U (en) | 2014-08-04 | 2014-08-04 | Wide band gap semiconductor device |
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| CN201420436988.1U CN204067370U (en) | 2014-08-04 | 2014-08-04 | Wide band gap semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016019720A1 (en) * | 2014-08-04 | 2016-02-11 | 台州市一能科技有限公司 | Wide bandgap semiconductor device and method of manufacturing same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016019720A1 (en) * | 2014-08-04 | 2016-02-11 | 台州市一能科技有限公司 | Wide bandgap semiconductor device and method of manufacturing same |
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