CN204045582U - The luminescence chip of the ac high-voltage that chip light emitting area utilization is high - Google Patents
The luminescence chip of the ac high-voltage that chip light emitting area utilization is high Download PDFInfo
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- CN204045582U CN204045582U CN201420086679.6U CN201420086679U CN204045582U CN 204045582 U CN204045582 U CN 204045582U CN 201420086679 U CN201420086679 U CN 201420086679U CN 204045582 U CN204045582 U CN 204045582U
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Abstract
The utility model provides the luminescence chip of the ac high-voltage that chip light emitting area utilization is high, comprising: dielectric substrate, at least one unit chipset, pad; Unit chipset comprises the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip, at least one common light unit chip; Common light unit chip comprises first group of electrode and second group of electrode; Pad comprises the first pad and the second pad; First group of electrode of the first luminous rectification unit chip, common light unit chip, the second luminous rectification unit chip form first and are connected in series luminescence unit; Second group of electrode of the 4th luminous rectification unit chip, common light unit chip, the 3rd luminous rectification unit chip form second and are connected in series luminescence unit; First string and second be connected in series luminescence unit reverse parallel connection, is formed with the first and second pads and is electrically connected, make common light unit chip the positive half cycle of alternating current and negative half period all luminous, raising chip light emitting area utilization.
Description
Technical field
The utility model relate to the chip light emitting area utilization that is applied to LED and OLED illumination high, the luminescence chip of the ac high-voltage of low stroboscopic.
Background technology
Reduce one of method of LED with OLED lighting cost be adopt alternating current to drive exchange chip, one of scheme is reverse parallel connection scheme (United States Patent (USP): 8053791, United States Patent (USP): 13/890878, Korean Patent: 1020090011325, United States Patent (USP): 7586129, United States Patent (USP): 8062916, Korean Patent: 1020080030045, Deng), the program adopts the unit chip reverse parallel connection the direct current driven of two string series connection, forms one and exchanges chip.Its weak point is, (1) chip light emitting area utilization only has 50%, and at positive half cycle and the negative half period of alternating current, only have a string location chip light emitting respectively, another string location chip is not luminous; (2) there is stroboscopic; (3) luminous efficiency is lower.
Need a kind of chip light emitting area utilization higher, stroboscopic can be alleviated, baroluminescence chip that employing alternating current that luminous efficiency is higher drives.
Utility model content
Primary and foremost purpose of the present utility model is to provide the higher luminescence chip of a kind of chip light emitting area utilization.
Second object is to provide a kind of ac high-voltage luminescence chip that can alleviate stroboscopic.
While reaching above-mentioned two objects, obtain the luminescence chip that luminous efficiency is higher.
The utility model provides a kind of baroluminescence chip that the alternating current that chip light emitting area utilization brings up to 60+% is driven: the limit of chip light emitting area utilization can reach 66.7%, and the utilance of the chip light emitting area than traditional 50% improves 33.3%.
The utility model provides a kind of while maintenance light-emitting area utilance 60+% further, alleviates the ac high-voltage luminescence chip of stroboscopic.
An embodiment of luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair pad;
Unit chipset comprises the first luminous rectification unit chip; Second luminous rectification unit chip; 3rd luminous rectification unit chip; 4th luminous rectification unit chip; A common light unit chip;
Common light unit chip comprises first group of electrode and second group of electrode respectively;
A pair pad comprises the first pad and the second pad;
First luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip and common light unit chip are formed on an insulating substrate, and are separated from each other;
First group of electrode of the first luminous rectification unit chip, common light unit chip, the second luminous rectification unit chip form first and are connected in series luminescence unit;
Second group of electrode of the 4th luminous rectification unit chip, common light unit chip, the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, formed with the first pad and the second pad and be electrically connected, luminescence chip can directly be driven by alternating current, make common light unit chip the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: luminescence chip comprises LED luminescence chip and OLED luminescence chip.
An embodiment: comprising:
Dielectric substrate;
N number of unit chipset, N >=2; The N corresponding with N number of unit chipset is to pad;
M unit chipset in N number of unit chipset comprises: the luminous rectification unit chip of M1, the luminous rectification unit chip of M2, the luminous rectification unit chip of M3, the luminous rectification unit chip of M4, M common light unit chip, wherein, and N >=M >=2.
N number of M common light unit chip in N number of unit chipset comprises first group of electrode and second group of electrode respectively;
The M corresponding with M unit chipset comprises M1 pad and M2 pad to pad;
The luminous rectification unit chip of the M1 of M unit chipset, the luminous rectification unit chip of M2, the luminous rectification unit chip of M3, the luminous rectification unit chip of M4 and M common light unit chip are formed in described dielectric substrate, and are separated from each other;
The luminous rectification unit chip of M1, first group of electrode of M common light unit chip, the luminous rectification unit chip of M2 form M-1 and are connected in series luminescence unit;
The luminous rectification unit chip of M4, second group of electrode of M common light unit chip, the luminous rectification unit chip of M3 form M-2 and are connected in series luminescence unit;
Wherein, M-1 is connected in series luminescence unit and M-2 is connected in series luminescence unit reverse parallel connection, formed with corresponding M1 pad and M2 pad and be electrically connected, M unit chipset can directly be driven the alternating current that pad inputs by from M, make M common light unit chip the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: have a predetermined angular different from from another to the phase place of the alternating current that pad inputs from the phase place of the alternating current of a pair pad input, the light sent from a unit chipset is superposed mutually with the light sent from another unit chipset, reduces stroboscopic.
An embodiment: a kind of luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair pad;
Unit chipset comprises the first luminous rectification unit chip; Second luminous rectification unit chip; 3rd luminous rectification unit chip; 4th luminous rectification unit chip; X common light unit chip, X >=2:
Each common light unit chip comprises first group of electrode and second group of electrode respectively;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two common light unit chips, luminous rectification unit chip in the middle of total (X-1) individual first, luminous rectification unit chip in the middle of total (X-1) individual second;
In the middle of first, luminous rectification unit chip is connected with first group of electrode of adjacent two common light unit chips, and in the middle of second, luminous rectification unit chip is connected with second group of electrode of adjacent two common light unit chips;
A pair pad comprises the first pad and the second pad;
In the middle of first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip, an X common light unit chip, (X-1) individual first, in the middle of luminous rectification unit chip, (X-1) individual second, luminous rectification unit chip is formed on an insulating substrate, and is separated from each other;
In the middle of first luminous rectification unit chip, first group of electrode of each common light unit chip, (X-1) individual first, luminous rectification unit chip, the second luminous rectification unit chip form first and are connected in series luminescence unit;
In the middle of 4th luminous rectification unit chip, second group of electrode of each common light unit chip, (X-1) individual second, luminous rectification unit chip, the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, is formed and is electrically connected, luminescence chip can directly be driven by alternating current with the first pad and the second pad, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: luminescence chip, comprising:
Dielectric substrate;
P unit chipset, P >=2; The P corresponding with P unit chipset is to pad;
Q unit chipset in P unit chipset comprises: the luminous rectification unit chip of Q1; The luminous rectification unit chip of Q2; The luminous rectification unit chip of Q3; The luminous rectification unit chip of Q4; Wherein, P >=Q >=2;
Each unit chipset of P unit chipset comprises X common light unit chip, X >=2 respectively:
Each common light unit chip comprises first group of electrode and second group of electrode respectively;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two common light unit chips in each group unit chip in P unit chipset, luminous rectification unit chip in the middle of total (X-1) individual first, luminous rectification unit chip in the middle of total (X-1) individual second; In the middle of first, luminous rectification unit chip is connected with first group of electrode of adjacent two common light unit chips, and in the middle of second, luminous rectification unit chip is connected with second group of electrode of adjacent two common light unit chips;
The Q corresponding with Q unit chipset comprises Q1 pad and Q2 pad to pad;
In the middle of the whole luminous rectification unit chip of P group unit chip, all common light unit chip, whole first, in the middle of luminous rectification unit chip, whole second, luminous rectification unit chip is formed on an insulating substrate, and is separated from each other;
The luminous rectification unit chip of Q1 of Q unit chipset in P unit chipset, first group of electrode of an X common light unit chip, (X-1) individual first luminous rectification unit chip in centre, the luminous rectification unit chip of Q2 form Q-1 and are connected in series luminescence unit.
The luminous rectification unit chip of Q4 of Q unit chipset in P unit chipset, second group of electrode of an X common light unit chip, (X-1) individual second luminous rectification unit chip in centre, the luminous rectification unit chip of Q3 form Q-2 and are connected in series luminescence unit;
Wherein, Q-1 is connected in series luminescence unit and Q-2 is connected in series luminescence unit reverse parallel connection, formed with corresponding Q1 pad and Q2 pad and be electrically connected, Q unit chipset can directly be driven the alternating current that pad inputs by from Q, make the X of Q unit chipset common light unit chip the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: have a predetermined angular different from from another to the phase place of the alternating current that pad inputs from the phase place of the alternating current of a pair pad input, the light sent from a unit chipset is superposed mutually with the light sent from another unit chipset, reduces stroboscopic.
The angle of the phase difference of the alternating current of any two inputs selects from one group of angle, comprising: 90 °, 80 °, 72 °, 60 °, 48 °, 45 °, 40 °, 36 °, 30 °, 24 °, 22.5 °, 20 °, 18 °, 16 °, 15 °, 12 °, 10 °, 9 °, 8 °, 6 °, 5 °, 4 °, 3 °, 2 °, 1 °.
Note: luminescence chip of the present utility model comprises LED unit chip and OLED unit chip.
Accompanying drawing explanation
Fig. 1 a, Fig. 1 b, Fig. 1 c show that traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip respectively.
Fig. 2 a, Fig. 2 b, Fig. 2 c show equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present utility model respectively.
Fig. 3 a shows that traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip.
Fig. 3 b and Fig. 3 c shows equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present utility model respectively.
Fig. 4 shows the schematic diagram of the embodiment of luminescence chip of the present utility model.
Fig. 5 shows the schematic diagram of the embodiment of luminescence chip of the present utility model.
The implication of the numerical chracter representative in figure is as follows:
100 represent luminescence chip of the present utility model,
10a, 10b represent the first pad of alternating current input and second pad to external world respectively,
20a, 20b represent another the first pad of alternating current input and the second pad to external world respectively,
11,12,13,14, the 15 a string luminescence units be connected in series representing luminescence chip respectively,
11a, 11b represent rectifying part and the luminous component of a luminous rectification unit chip respectively,
21, a string luminescence unit be connected in series of 22,23,24,25 luminescence chips represented respectively,
21a, 21b represent rectifying part and the luminous component of a luminous rectification unit chip respectively,
50,60a, 60b, 70a, 70b, 80,90 represent common light unit chip respectively,
101,102,103,104 represent the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip of a unit chipset respectively,
101a, 102a, 103a, 104a represent first of a unit chipset the luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip respectively,
101b, 102b, 103b, 104b represent first of a unit chipset the luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip respectively,
112,122 represent first and second of a unit chipset the middle luminous rectification unit chips respectively,
112a, 122a represent first and second of a unit chipset the middle luminous rectification unit chips respectively,
112b, 122b represent first and second of a unit chipset the middle luminous rectification unit chips respectively,
501 and 502 the first and second electrodes representing first group of electrode of common light unit chip 50 respectively,
511 and 512 the first and second electrodes representing second group of electrode of common light unit chip 50 respectively,
601 and 602 the first and second electrodes representing first group of electrode of common light unit chip 60 respectively,
611 and 612 the first and second electrodes representing second group of electrode of common light unit chip 60 respectively,
601a and 602a represents the first and second electrodes of first group of electrode of common light unit chip 60a respectively,
701 and 702 the first and second electrodes representing first group of electrode of common light unit chip 70 respectively,
711 and 712 the first and second electrodes representing second group of electrode of common light unit chip 70 respectively,
701a and 702a represents the first and second electrodes of first group of electrode of common light unit chip 70a respectively,
801 and 802 the first and second electrodes representing first group of electrode of common light unit chip 80 respectively,
811 and 812 the first and second electrodes representing second group of electrode of common light unit chip 80 respectively,
901 and 902 the first and second electrodes representing first group of electrode of common light unit chip 90 respectively,
911 and 912 the first and second electrodes representing second group of electrode of common light unit chip 90 respectively,
Embodiment
For making the object of embodiment of the present utility model, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in embodiment of the present utility model, technical scheme in embodiment of the present utility model is clearly and completely described, obviously, described embodiment is a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Fig. 1 a, Fig. 1 b, Fig. 1 c show that traditional reverse parallel connection exchanges the schematic diagram of the equivalent electric circuit of semiconductor chip respectively.Direct current component chip 21,22,23 reverse parallel connection of direct current component chip 11,12,13 and second series connection of the first string series connection, is connected with the first pad 10a of alternating current input and the second pad 10b.Be two parts each direct current component chip according to Function Decomposition, a part plays the effect (as shown in 11a and 21a) of rectification, and another part plays luminous effect (as shown in 11b and 21b).Each direct current component chip only has half the time to have electric current to flow through.Therefore, the utilance of chip light emitting area only has 50%, and luminous efficiency is low.
Fig. 2 a, Fig. 2 b, Fig. 2 c show equivalent circuit diagram and the schematic diagram of an embodiment of luminescence chip of the present utility model respectively.In order to improve chip light emitting area utilization, improve luminous efficiency, the utility model provides a kind of new luminescence chip 100, namely, a unit chip 22 in the direct current component chip that a unit chip 12 in the direct current component chip of the first string series connection in Fig. 1 a and the second string are connected is merged into the common light unit chip 50 that has two arrays of electrodes, common light unit core 50 is made no longer to have rectification function, but, common light unit chip 50 the positive half cycle of alternating current and negative half period all luminous, improve the utilance of chip light emitting area, improve luminous efficiency.
Fig. 2 b shows: luminescence chip 100 comprises: dielectric substrate (not indicating in the drawings), a unit chipset and a pair pad.Unit chipset comprises: the luminous rectification unit chip 102 of the first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 50.A pair pad comprises: the first pad 10a and the second pad 10b.The luminous rectification unit chip 102 of first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 50, first pad 10a and the second pad 10b, formed on an insulating substrate, be separated from each other.
Connect the first luminous rectification unit chip 101, common light unit core 50 the luminous rectification unit chip 102 of first group of electrode 501 and 502, second form the luminescence unit that the first string is connected in series.Connect the 4th luminous rectification unit chip 104, common light unit core 50 the luminous rectification unit chip 103 of second group of electrode the 511 and 512, the 3rd form the luminescence unit that the second string is connected in series.
The luminescence unit reverse parallel connection that first luminescence unit be connected in series and second is connected in series, is electrically connected with the first pad 10a and the second pad 10b.
The positive half cycle of alternating current inputs from the first pad 10a, flows through the luminescence unit that the first string is connected in series, and exports from the second pad 10b.
The negative half period of alternating current inputs from the second pad 10b, flows through the luminescence unit that the second string is connected in series, and exports from the first pad 10a.
At positive half cycle and the negative half period of alternating current, common light unit core 50 is all luminous, this improves the utilance of chip light emitting area, improves luminous efficiency.
An embodiment: arrange the luminous rectification unit chip 102 of the first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 50 area identical, the utilance of chip light emitting area reaches 60%, and the utilance of the chip light emitting area than traditional 50% improves 20%.
First pad 10a and the second pad 10b can be formed on an insulating substrate, as shown in Figure 2 b.Or the first pad 10a is formed on the first luminous rectification unit chip 101 and the 3rd luminous rectification unit chip 103; Second pad 10b is formed on the second luminous rectification unit chip 102 and the 4th luminous rectification unit chip 104, as shown in Figure 2 c.
Fig. 3 a shows that traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip.Fig. 3 b and Fig. 3 c shows equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present utility model respectively.
One of structure of traditional interchange chip is as shown in Figure 3 a: luminous rectification unit 21,22,23,24,25 reverse parallel connection that the first luminous rectification unit be connected in series 11,12,13,14,15 and second is connected in series, and is connected with the first pad of alternating current input and the second pad 10a and 10b.Therefore, each luminous rectification unit only has half the time to have electric current to flow through.Therefore, the utilance of chip light emitting area only has 50%.
In order to improve the utilance of chip light emitting area, a unit chip 22 in the luminous rectification unit that the unit chip 12 in the luminous rectification unit of the first string series connection and the second string are connected is merged into the common light unit chip 60 that has two arrays of electrodes; A unit chip 24 in the luminous rectification unit that a unit chip 14 in the luminous rectification unit of the first string series connection and the second string are connected is merged into the common light unit chip 70 that has two arrays of electrodes, as shown in Figure 3 b.Make common light unit chip 60 and 70 no longer have rectification function, but, common light unit chip 60 and 70 the positive half cycle of alternating current and negative half period all luminous, therefore, improve the utilance of chip light emitting area, improve luminous efficiency.
Fig. 3 c shows: luminescence chip 100 comprises: dielectric substrate (not indicating in the drawings), a unit chipset and a pair pad.Unit chipset comprises: luminous rectification unit chip 122, first pad 10a and the second pad 10b in the middle of luminous rectification unit chip 112, second in the middle of the luminous rectification unit chip 102 of the first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 60, common light unit core 70, first.
Luminous rectification unit chip 122, first pad 10a and the second pad 10b in the middle of luminous rectification unit chip 112, second in the middle of the luminous rectification unit chip 102 of first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 60, common light unit core 70, first, formed on an insulating substrate, be separated from each other.
Connect the first luminous rectification unit chip 101, common light unit core 60 first group of electrode 601 and 602, first in the middle of luminous rectification unit chip 112, common light unit core 70 the luminous rectification unit chip 102 of first group of electrode 701 and 702, second form the luminescence unit that the first string is connected in series.
Connect the 4th luminous rectification unit chip 104, common light unit core 70 second group of electrode 711 and 712, second in the middle of luminous rectification unit chip 122, common light unit core 60 the luminous rectification unit chip 103 of second group of electrode the 611 and 612, the 3rd form the luminescence unit that the second string is connected in series.
The luminescence unit reverse parallel connection that first luminescence unit be connected in series and second is connected in series, is electrically connected with the first pad 10a and the second pad 10b.
The positive half cycle of alternating current inputs from the first pad 10a, flows through the luminescence unit that the first string is connected in series, and exports from the second pad 10b.
The negative half period of alternating current inputs from the second pad 10b, flows through the luminescence unit that the second string is connected in series, and exports from the first pad 10a.
At positive half cycle and the negative half period of alternating current, common light unit core 60 and common light unit core 70 all luminous, this improves the utilance of chip light emitting area, improve luminous efficiency.
An embodiment: the area arranging luminous rectification unit chip 122 in the middle of the luminous rectification unit chip 102 of the first luminous rectification unit chip 101, second, the 3rd luminous rectification unit chip 103, the 4th luminous rectification unit chip 104, common light unit core 60, the luminous rectification unit chip 101, second of common light unit core 70, first is identical, the utilance of chip light emitting area reaches 62.5%, and the utilance of the chip light emitting area than traditional 50% improves 25%.
Note a: luminescence chip can comprise X common light unit chip, X >=2.Each common light unit chip has two arrays of electrodes; Between any two common light unit chips, two luminous rectification unit chips in centre are set, in the middle of making first, luminous rectification unit chip is connected with first group of electrode of adjacent two common light unit chips, and in the middle of second, luminous rectification unit chip is connected with second group of electrode of adjacent two common light unit chips.There is luminous rectification unit chip in the middle of (X-1) individual first, have luminous rectification unit chip in the middle of (X-1) individual second.
Fig. 4 shows the schematic diagram of the embodiment of luminescence chip of the present utility model.The embodiment that the embodiment of Fig. 4 displaying and Fig. 2 c show is similar.Difference is: the embodiment that Fig. 2 c shows comprises a unit chipset and a pair pad, and the embodiment that Fig. 4 shows comprises two unit chipsets and two pairs of pads, therefore, can input two alternating currents simultaneously.Arrange the phase place of two alternating currents, the light that two unit chipsets are sent superposes mutually, alleviates stroboscopic.
Luminescence chip 100 comprises: dielectric substrate (not showing in the drawings), first module chipset, second unit chipset, first pair of pad, second pair of pad.
First module chipset comprises: the first luminous rectification unit chip 101a, the second luminous rectification unit chip 102a, the 3rd luminous rectification unit chip 103a, the 4th luminous rectification unit chip 104a, a common light unit chip 80.
Connect the first luminous rectification unit chip 101a, first group of electrode 801 and 802 of common light unit chip 80, the second luminous rectification unit chip 102a forms the first luminescence unit be connected in series.
Connect the 4th luminous rectification unit chip 104a, second group of electrode 811 and 812 of common light unit chip 80, the 3rd luminous rectification unit chip 103a forms the second luminescence unit be connected in series.
First pair of pad comprises: the first pad 10a, the second pad 10b.
Second unit chipset comprises: the first luminous rectification unit chip 101b, the second luminous rectification unit chip 102b, the 3rd luminous rectification unit chip 103b, the 4th luminous rectification unit chip 104b, a common light unit chip 90.
Connect the first luminous rectification unit chip 101b, common light unit chip 90 the luminous rectification unit chip 102b of first group of electrode 901 and 902, second form the luminescence unit that M-1 is connected in series.
Connect the 4th luminous rectification unit chip 104b, common light unit chip 90 the luminous rectification unit chip 103b of second group of electrode the 911 and 912, the 3rd form the luminescence unit that M-2 is connected in series.
Second pair of pad comprises: the first pad 20a, the second pad 20b.
The positive half cycle of the first alternating current inputs from the first pad 10a, flows through the first luminescence unit be connected in series of first module chipset, exports from the second pad 10b.
The negative half period of the first alternating current inputs from the second pad 10b, flows through the second luminescence unit be connected in series of first module chipset, exports from the first pad 10a.
The positive half cycle of the second alternating current inputs from the first pad 20a, and the luminescence unit that the M-1 flowing through second unit chipset is connected in series exports from the second pad 20b.
The negative half period of the second alternating current inputs from the second pad 20b, and the luminescence unit that the M-2 flowing through second unit chipset is connected in series exports from the first pad 20a.
At positive half cycle and the negative half period of the first alternating current, common light unit core 80 is all luminous, and at positive half cycle and the negative half period of the second alternating current, common light unit core 90 is all luminous, this improves the utilance of chip light emitting area.
An embodiment: the phase difference of the first and second alternating currents is 90 °.
Note a: luminescence chip can comprise N number of unit chipset, and the N corresponding with N number of unit chipset is to pad, N >=2, the luminescence chip that Fig. 4 shows comprises 2 unit chipsets, N=2.
The embodiment that the embodiment of the luminescence chip that Fig. 5 shows and Fig. 3 c show is similar.Difference is: the embodiment that Fig. 3 c shows comprises a unit chipset and a pair pad, and the embodiment that Fig. 5 shows comprises two unit chipsets and two pairs of pads, therefore, can input two alternating currents simultaneously.Arrange the phase place of two alternating currents, the light that two unit chipsets are sent superposes mutually, alleviates stroboscopic.
Luminescence chip 100 comprises: dielectric substrate (not showing in the drawings), first module chipset, second unit chipset, first pair of pad, second pair of pad.
First module chipset comprises: luminous rectification unit chip 122a in the middle of luminous rectification unit chip 112a, second in the middle of the first luminous rectification unit chip 101a, the second luminous rectification unit chip 102a, the 3rd luminous rectification unit chip 103a, the 4th luminous rectification unit chip 104a, common light unit chip 60a, common light unit chip 70a, first.First pair of pad comprises: the first pad 10a, the second pad 10b.
Connect the first luminous rectification unit chip 101a, common light unit core 60a first group of electrode 601a and 602a, first group of electrode 701a and 702a, the second luminous rectification unit chip 102a of luminous rectification unit chip 112a, common light unit core 70a forms the first luminescence unit be connected in series in the middle of first.
Connect the 4th luminous rectification unit chip 104a, common light unit core 70a second group of electrode, second group of electrode of luminous rectification unit chip 122a, common light unit chip 60a, the 3rd luminous rectification unit chip 103a form the second luminescence unit be connected in series in the middle of second.
Second unit chipset comprises: luminous rectification unit chip 122b in the middle of luminous rectification unit chip 112b, second in the middle of the first luminous rectification unit chip 101b, the second luminous rectification unit chip 102b, the 3rd luminous rectification unit chip 103b, the 4th luminous rectification unit chip 104b, common light unit chip 60b, common light unit chip 70b, first.Second pair of pad comprises: the first pad 20a, the second pad 20b.
Connect the first luminous rectification unit chip 101b, common light unit core 60b first group of electrode, luminous rectification unit chip 112b, first group of electrode of common light unit core 70b, the second luminous rectification unit chip 102b form the luminescence unit that Q-1 is connected in series in the middle of first.
Connect the 4th luminous rectification unit chip 104b, common light unit core 70b second group of electrode, luminous rectification unit chip 122b, second group of electrode of common light unit chip 60b, the 3rd luminous rectification unit chip 103b form the luminescence unit that Q-2 is connected in series in the middle of second.
The positive half cycle of the first alternating current inputs from the first pad 10a, flows through the first luminescence unit be connected in series of first module chipset, exports from the second pad 10b.
The negative half period of the first alternating current inputs from the second pad 10b, flows through the second luminescence unit be connected in series of first module chipset, exports from the first pad 10a.
The positive half cycle of the second alternating current inputs from the first pad 20a, and the luminescence unit that the Q-1 flowing through second unit chipset is connected in series exports from the second pad 20b.
The negative half period of the second alternating current inputs from the second pad 20b, and the luminescence unit that the Q-2 flowing through second unit chipset is connected in series exports from the first pad 20a.
At positive half cycle and the negative half period of the first alternating current, 60a and 70a is luminous for common light unit core, and at positive half cycle and the negative half period of the second alternating current, 60b and 70b is luminous for common light unit core, this improves the utilance of chip light emitting area.
An embodiment: the phase difference of the first and second alternating currents is 90 °.
Note: (1) luminescence chip can comprise P unit chipset, and P the pad corresponding with P unit chipset, P >=2.
(2) luminescence chips can comprise P unit chipset, each unit chipset comprises X common light unit chip, between any two adjacent common light unit chips, have two luminous rectification unit chips in centre, first of the common light unit chip that two centre luminous rectification unit chips are adjacent with two respectively combines second group of electrode and connects.
Last it is noted that above embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to aforementioned embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in aforementioned embodiment, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.
Claims (8)
1. a luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair pad;
It is characterized in that, described unit chipset comprises the first luminous rectification unit chip; Second luminous rectification unit chip; 3rd luminous rectification unit chip; 4th luminous rectification unit chip; A common light unit chip;
Described common light unit chip comprises first group of electrode and second group of electrode;
Described a pair pad comprises the first pad and the second pad;
Described first luminous rectification unit chip, described second luminous rectification unit chip, described 3rd luminous rectification unit chip, described 4th luminous rectification unit chip and described common light unit chip are formed in described dielectric substrate, and are separated from each other;
Described first group of electrode, the described second luminous rectification unit chip of described first luminous rectification unit chip, described common light unit chip form first and are connected in series luminescence unit;
Described second group of electrode, the described 3rd luminous rectification unit chip of described 4th luminous rectification unit chip, described common light unit chip form second and are connected in series luminescence unit;
Wherein, described first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, formed with described first pad and the second pad and be electrically connected, described luminescence chip can directly be driven by alternating current, make described common light unit chip the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
2. luminescence chip according to claim 1, is characterized in that, described luminescence chip comprises LED luminescence chip and OLED luminescence chip.
3. luminescence chip according to claim 1, is characterized in that, described luminescence chip, comprising: N number of unit chipset, N >=2;
The N corresponding with described N number of unit chipset is to pad;
M unit chipset in described N number of unit chipset comprises: the luminous rectification unit chip of M1; The luminous rectification unit chip of M2; The luminous rectification unit chip of M3; The luminous rectification unit chip of M4; M common light unit chip; Wherein, N >=M >=2;
N number of described common light unit chip in described N number of unit chipset comprises first group of electrode and second group of electrode respectively;
The M corresponding with described M unit chipset comprises M1 pad and M2 pad to pad;
The luminous rectification unit chip of described M1 of described M unit chipset, the luminous rectification unit chip of described M2, the luminous rectification unit chip of described M3, the luminous rectification unit chip of described M4 and described M common light unit chip are formed in described dielectric substrate, and are separated from each other;
The luminous rectification unit chip of described M1, described first group of electrode of described M common light unit chip, the luminous rectification unit chip of described M2 form M-1 and are connected in series luminescence unit; The luminous rectification unit chip of described M4, described second group of electrode of described M common light unit chip, the luminous rectification unit chip of described M3 form M-2 and are connected in series luminescence unit; Wherein, described M-1 is connected in series luminescence unit and M-2 is connected in series luminescence unit reverse parallel connection, formed with corresponding described M1 pad and M2 pad and be electrically connected, described M unit chipset can directly be driven the alternating current that pad inputs by from described M, make described M common light unit chip the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
4. luminescence chip according to claim 3, it is characterized in that, there is a predetermined angular different from from another to the phase place of the alternating current that described pad inputs from the phase place of the alternating current of pad input described in a pair, the light sent from a unit chipset is superposed mutually with the light sent from another unit chipset, reduces stroboscopic.
5. a luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair pad;
It is characterized in that, described unit chipset comprises the first luminous rectification unit chip; Second luminous rectification unit chip; 3rd luminous rectification unit chip; 4th luminous rectification unit chip; X common light unit chip, X >=2;
Each described common light unit chip comprises first group of electrode and second group of electrode respectively;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two described common light unit chips, total X subtracts 1 the described first middle luminous rectification unit chip, and total X subtracts 1 the described second middle luminous rectification unit chip;
In the middle of described first, luminous rectification unit chip is connected with described first group of electrode of adjacent two described common light unit chips, and in the middle of described second, luminous rectification unit chip is connected with described second group of electrode of adjacent two described common light unit chips;
Described a pair pad comprises the first pad and the second pad;
Described first luminous rectification unit chip, described second luminous rectification unit chip, described 3rd luminous rectification unit chip, described 4th luminous rectification unit chip, a described X common light unit chip, described X subtract luminous rectification unit chip and described X in the middle of 1 first subtract 1 second in the middle of luminous rectification unit chip be formed in described dielectric substrate, and to be separated from each other;
Described first group of electrode of described first luminous rectification unit chip, X described common light unit chip, X subtract 1 the described first middle luminous rectification unit chip, described second luminous rectification unit chip forms first and is connected in series luminescence unit;
Described second group of electrode of described 4th luminous rectification unit chip, X described common light unit chip, X subtract 1 the described second middle luminous rectification unit chip, described 3rd luminous rectification unit chip forms second and is connected in series luminescence unit;
Wherein, described first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, formed with described first pad and the second pad and be electrically connected, described luminescence chip can directly be driven by alternating current, make common light unit chip described in each the positive half cycle of alternating current of input and negative half period luminous, improve chip light emitting area utilization, improve luminous efficiency.
6. luminescence chip according to claim 5, is characterized in that, described luminescence chip comprises LED luminescence chip and OLED luminescence chip.
7. luminescence chip according to claim 5, is characterized in that, described luminescence chip, comprising:
P unit chipset, P >=2;
With described P the P that unit chipset is corresponding to pad;
Q unit chipset in described P unit chipset comprises: the luminous rectification unit chip of Q1; The luminous rectification unit chip of Q2; The luminous rectification unit chip of Q3; The luminous rectification unit chip of Q4; Wherein, P >=Q >=2;
Each unit chipset of described P unit chipset comprises X common light unit chip, X >=2 respectively;
Common light unit chip described in each comprises first group of electrode and second group of electrode respectively;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two described common light unit chips in each group unit chip in described P unit chipset, total X subtracts 1 the described first middle luminous rectification unit chip, and total X subtracts 1 the described second middle luminous rectification unit chip; In the middle of described first, luminous rectification unit chip is connected with described first group of electrode of adjacent two described common light unit chips, and in the middle of described second, luminous rectification unit chip is connected with described second group of electrode of adjacent two described common light unit chips;
The Q corresponding with described Q unit chipset comprises Q1 pad and Q2 pad to pad;
In the middle of the whole described luminous rectification unit chip of described P group unit chip, whole described common light unit chip, all described first, luminous rectification unit chip, all the described second middle luminous rectification unit chip are formed in described dielectric substrate, and are separated from each other;
The luminous rectification unit chip of described Q1 of Q unit chipset in described P unit chipset, described first group of electrode of a described X common light unit chip, X subtract 1 the described first middle luminous rectification unit chip, the luminous rectification unit chip of described Q2 forms Q-1 and is connected in series luminescence unit;
The luminous rectification unit chip of described Q4 of Q unit chipset in described P unit chipset, described second group of electrode of a described X common light unit chip, X subtract 1 the described second middle luminous rectification unit chip, the luminous rectification unit chip of described Q3 forms Q-2 and is connected in series luminescence unit;
Wherein, described Q-1 is connected in series luminescence unit and Q-2 is connected in series luminescence unit reverse parallel connection, formed with corresponding described Q1 pad and Q2 pad and be electrically connected, described Q unit chipset can directly be driven the alternating current that pad inputs by from described Q, make described X common light unit chip of described Q unit chipset the positive half cycle of alternating current of input and negative half period all luminous, improve chip light emitting area utilization, improve luminous efficiency.
8. luminescence chip according to claim 7, it is characterized in that, there is a predetermined angular different from from another to the phase place of the alternating current that described pad inputs from the phase place of the alternating current of pad input described in a pair, the light sent from a unit chipset is superposed mutually with the light sent from another unit chipset, reduces stroboscopic.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420086679.6U CN204045582U (en) | 2014-02-22 | 2014-02-22 | The luminescence chip of the ac high-voltage that chip light emitting area utilization is high |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420086679.6U CN204045582U (en) | 2014-02-22 | 2014-02-22 | The luminescence chip of the ac high-voltage that chip light emitting area utilization is high |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103985705A (en) * | 2014-02-22 | 2014-08-13 | 张涛 | AC high-voltage luminescence chip with high chip luminescence area utilization rate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103985705A (en) * | 2014-02-22 | 2014-08-13 | 张涛 | AC high-voltage luminescence chip with high chip luminescence area utilization rate |
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