CN103985705A - AC high-voltage luminescence chip with high chip luminescence area utilization rate - Google Patents
AC high-voltage luminescence chip with high chip luminescence area utilization rate Download PDFInfo
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- CN103985705A CN103985705A CN201410067629.8A CN201410067629A CN103985705A CN 103985705 A CN103985705 A CN 103985705A CN 201410067629 A CN201410067629 A CN 201410067629A CN 103985705 A CN103985705 A CN 103985705A
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Abstract
The invention provides a luminescence chip. The luminescence chip comprises an insulation substrate, at least one unit chipset and a pad. The unit chipset comprises a first luminescence rectification unit chip, a second luminescence rectification unit chip, a third luminescence rectification unit chip, a fourth luminescence rectification unit chip, and at least one common luminescence unit chip. The common luminescence unit chip comprises a first group of electrodes and a second group of electrodes. The pad comprises a first pad and a second pad. The first luminescence rectification unit chip, the first group of electrodes in the common luminescence unit chip and the second luminescence rectification unit chip form a first string of series-connected luminescence units. The fourth luminescence rectification unit chip, the second group of electrodes of the common luminescence chip unit and the third luminescence rectification unit chip form a second string of series-connected luminescence units. The first string of series-connected luminescence units and the second string of series-connected luminescence units are reversely connected in parallel, form electrical connection with the first pad and the second pad, and enable the common luminescence unit chip to be luminescent at the positive half cycle and the negative half cycle of alternating currents, such that the chip luminescence area utilization rate is improved.
Description
Technical field
The present invention relates to be applied to the luminescence chip of the chip light emitting area utilization ac high-voltage high, low stroboscopic of LED and OLED illumination.
Background technology
One of method that reduces LED and OLED lighting cost is the chip that exchanges that adopts alternating current driving, one of scheme is reverse parallel connection scheme (United States Patent (USP): 8053791, United States Patent (USP): 13/890878, Korean Patent: 1020090011325, United States Patent (USP): 7586129, United States Patent (USP): 8062916, Korean Patent: 1020080030045, Deng), this scheme adopts the unit chip reverse parallel connection of the direct current driven of two string series connection, forms one and exchanges chip.Its weak point is, (1) chip light emitting area utilization only has 50%, at positive half cycle and the negative half period of alternating current, only has respectively a string location chip light emitting, and another string location chip is not luminous; (2) there is stroboscopic; (3) luminous efficiency is lower.
Need a kind of chip light emitting area utilization higher, can alleviate the baroluminescence chip that employing alternating current stroboscopic, that luminous efficiency is higher drives.
Summary of the invention
Primary and foremost purpose of the present invention is to provide the higher luminescence chip of a kind of chip light emitting area utilization.
Second object is to provide a kind of ac high-voltage luminescence chip that can alleviate stroboscopic.
When reaching above-mentioned two objects, obtain the luminescence chip that luminous efficiency is higher.
The invention provides and a kind of chip light emitting area utilization is brought up to the baroluminescence chip that the alternating current of 60+% drives: the limit of chip light emitting area utilization can reach 66.7%, the utilance of the chip light emitting area than traditional 50% has improved 33.3%.
The present invention further provides a kind ofly when keeping light-emitting area utilance 60+%, alleviate the ac high-voltage luminescence chip of stroboscopic.
An embodiment of luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair of pad;
Unit chipset comprises the first luminous rectification unit chip; The second luminous rectification unit chip; The 3rd luminous rectification unit chip; The 4th luminous rectification unit chip; A common light unit chip;
Common light unit chip comprises respectively first group of electrode and second group of electrode;
A pair of pad comprises the first pad and the second pad;
The first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip and common light unit chip are formed in dielectric substrate, and are separated from each other;
First group of electrode of the first luminous rectification unit chip, common light unit chip, the second luminous rectification unit chip form first and are connected in series luminescence unit;
Second group of electrode of the 4th luminous rectification unit chip, common light unit chip, the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, form and be electrically connected to the first pad and the second pad, luminescence chip can directly be driven by alternating current, make common light unit chip all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: luminescence chip comprises LED luminescence chip and OLED luminescence chip.
An embodiment: comprising:
Dielectric substrate;
N unit chipset, N >=2; The N corresponding with N unit chipset is to pad;
M unit chipset in N unit chipset comprises: the luminous rectification unit chip of M1, and the luminous rectification unit chip of M2, the luminous rectification unit chip of M3, the luminous rectification unit chip of M4, M common light unit chip, wherein, N >=M >=2.
N in N unit chipset M common light unit chip comprises respectively first group of electrode and second group of electrode;
The M corresponding with M unit chipset comprises M1 pad and M2 pad to pad;
The luminous rectification unit chip of M1, the luminous rectification unit chip of M2, the luminous rectification unit chip of M3, the luminous rectification unit chip of M4 and the M common light unit chip of M unit chipset are formed in described dielectric substrate, and are separated from each other;
The luminous rectification unit chip of M1, first group of electrode of M common light unit chip, the luminous rectification unit chip of M2 form M-1 and are connected in series luminescence unit;
The luminous rectification unit chip of M4, second group of electrode of M common light unit chip, the luminous rectification unit chip of M3 form M-2 and are connected in series luminescence unit;
Wherein, M-1 is connected in series luminescence unit and M-2 is connected in series luminescence unit reverse parallel connection, form electrical connection with corresponding M1 pad and M2 pad, M unit chipset can directly be driven the alternating current of pad input from M, make M common light unit chip all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: the phase place of the alternating current of inputting from a pair of pad is from the phase place to the alternating current of pad input has a predetermined angular different from another, the light sending from a unit chipset and the light sending from another unit chipset are superposeed mutually, reduce stroboscopic.
An embodiment: a kind of luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair of pad;
Unit chipset comprises the first luminous rectification unit chip; The second luminous rectification unit chip; The 3rd luminous rectification unit chip; The 4th luminous rectification unit chip; X common light unit chip, X >=2:
Each common light unit chip comprises respectively first group of electrode and second group of electrode;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two common light unit chips, luminous rectification unit chip in the middle of total (X-1) individual first, luminous rectification unit chip in the middle of total (X-1) individual second;
Luminous rectification unit chip is connected with first group of electrode of adjacent two common light unit chips in the middle of first, and the second luminous rectification unit chip in centre is connected with second group of electrode of adjacent two common light unit chips;
A pair of pad comprises the first pad and the second pad;
In the middle of the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip, an X common light unit chip, (X-1) individual first, in the middle of luminous rectification unit chip, (X-1) individual second, luminous rectification unit chip is formed in dielectric substrate, and is separated from each other;
In the middle of the first luminous rectification unit chip, first group of electrode of each common light unit chip, (X-1) individual first, luminous rectification unit chip, the second luminous rectification unit chip form first and are connected in series luminescence unit;
In the middle of the 4th luminous rectification unit chip, second group of electrode of each common light unit chip, (X-1) individual second, luminous rectification unit chip, the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, forms and is electrically connected to the first pad and the second pad, and luminescence chip can directly be driven by alternating current, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: luminescence chip, comprising:
Dielectric substrate;
P unit chipset, P >=2; The P corresponding with P unit chipset is to pad;
Q unit chipset in P unit chipset comprises: the luminous rectification unit chip of Q1; The luminous rectification unit chip of Q2; The luminous rectification unit chip of Q3; The luminous rectification unit chip of Q4; Wherein, P >=Q >=2;
Each unit chipset of P unit chipset comprises respectively X common light unit chip, X >=2;
Each common light unit chip comprises respectively first group of electrode and second group of electrode;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two common light unit chips in each group unit chip in P unit chipset, luminous rectification unit chip in the middle of total (X-1) individual first, luminous rectification unit chip in the middle of total (X-1) individual second; Luminous rectification unit chip is connected with first group of electrode of adjacent two common light unit chips in the middle of first, and the second luminous rectification unit chip in centre is connected with second group of electrode of adjacent two common light unit chips;
The Q corresponding with Q unit chipset comprises Q1 pad and Q2 pad to pad;
In the middle of the whole luminous rectification unit chip of P group unit chip, whole common light unit chip, whole first, in the middle of luminous rectification unit chip, whole second, luminous rectification unit chip is formed in dielectric substrate, and is separated from each other;
In the middle of first group of electrode, (X-1) individual first of the luminous rectification unit chip of Q1 of Q unit chipset in P unit chipset, an X common light unit chip, luminous rectification unit chip, the luminous rectification unit chip of Q2 form Q-1 and are connected in series luminescence unit.
In the middle of second group of electrode, (X-1) individual second of the luminous rectification unit chip of Q4 of Q unit chipset in P unit chipset, an X common light unit chip, luminous rectification unit chip, the luminous rectification unit chip of Q3 form Q-2 and are connected in series luminescence unit;
Wherein, Q-1 is connected in series luminescence unit and Q-2 is connected in series luminescence unit reverse parallel connection, form electrical connection with corresponding Q1 pad and Q2 pad, Q unit chipset can directly be driven the alternating current of pad input from Q, make X common light unit chip of Q unit chipset all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
An embodiment: the phase place of the alternating current of inputting from a pair of pad is from the phase place to the alternating current of pad input has a predetermined angular different from another, the light sending from a unit chipset and the light sending from another unit chipset are superposeed mutually, reduce stroboscopic.
The angle of the phase difference of the alternating current of any two inputs is to select from one group of angle, comprising: 90 °, and 80 °, 72 °, 60 °, 48 °, 45 °, 40 °, 36 °, 30 °, 24 °, 22.5 °, 20 °, 18 °, 16 °, 15 °, 12 °, 10 °, 9 °, 8 °, 6 °, 5 °, 4 °, 3 °, 2 °, 1 °.
Note: luminescence chip of the present invention comprises LED unit chip and OLED unit chip.
Accompanying drawing explanation
Fig. 1 a, Fig. 1 b, Fig. 1 c show that respectively traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip.
Fig. 2 a, Fig. 2 b, Fig. 2 c show respectively equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present invention.
Fig. 3 a shows that traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip.
Fig. 3 b and Fig. 3 c show respectively equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present invention.
Fig. 4 shows the schematic diagram of the embodiment of luminescence chip of the present invention.
Fig. 5 shows the schematic diagram of the embodiment of luminescence chip of the present invention.
The implication of the numerical chracter representative in figure is as follows:
100 represent luminescence chip of the present invention,
10a, 10b represent respectively the first pad and second pad of alternating current input to external world,
20a, 20b represent respectively another the first pad and second pad of alternating current input to external world,
11,12,13,14, the 15 a string luminescence units that are connected in series that represent respectively luminescence chip,
11a, 11b represent respectively rectifying part and the luminous component of a luminous rectification unit chip,
21, a string luminescence unit being connected in series of 22,23,24,25 luminescence chips that represent respectively,
21a, 21b represent respectively rectifying part and the luminous component of a luminous rectification unit chip,
50,60a, 60b, 70a, 70b, 80,90 represent respectively common light unit chip,
101,102,103,104 the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chips that represent respectively a unit chipset,
101a, 102a, 103a, 104a represent respectively the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip of a unit chipset,
101b, 102b, 103b, 104b represent respectively the first luminous rectification unit chip, the second luminous rectification unit chip, the 3rd luminous rectification unit chip, the 4th luminous rectification unit chip of a unit chipset,
112,122 represent respectively a unit chipset first and second in the middle of luminous rectification unit chips,
112a, 122a represent respectively the first and second middle luminous rectification unit chips of a unit chipset,
112b, 122b represent respectively the first and second middle luminous rectification unit chips of a unit chipset,
501 and 502 represent respectively the first and second electrodes of first group of electrode of common light unit chip 50,
511 and 512 represent respectively the first and second electrodes of second group of electrode of common light unit chip 50,
601 and 602 represent respectively the first and second electrodes of first group of electrode of common light unit chip 60,
611 and 612 represent respectively the first and second electrodes of second group of electrode of common light unit chip 60,
601a and 602a represent respectively the first and second electrodes of first group of electrode of common light unit chip 60a,
701 and 702 represent respectively the first and second electrodes of first group of electrode of common light unit chip 70,
711 and 712 represent respectively the first and second electrodes of second group of electrode of common light unit chip 70,
701a and 702a represent respectively the first and second electrodes of first group of electrode of common light unit chip 70a,
801 and 802 represent respectively the first and second electrodes of first group of electrode of common light unit chip 80,
811 and 812 represent respectively the first and second electrodes of second group of electrode of common light unit chip 80,
901 and 902 represent respectively the first and second electrodes of first group of electrode of common light unit chip 90,
911 and 912 represent respectively the first and second electrodes of second group of electrode of common light unit chip 90,
Embodiment
For making object, technical scheme and the advantage of embodiment of the present invention clearer, below in conjunction with the accompanying drawing in embodiment of the present invention, technical scheme in embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 a, Fig. 1 b, Fig. 1 c show that respectively traditional reverse parallel connection exchanges the schematic diagram of the equivalent electric circuit of semiconductor chip.Direct current unit chip 21,22,23 reverse parallel connections of the direct current unit chip 11,12,13 of the first string series connection and the second string series connection, are connected with the second pad 10b with the first pad 10a of alternating current input.Each direct current unit chip, according to Function Decomposition, be two parts, a part plays the effect (as shown in 11a and 21a) of rectification, and another part plays luminous effect (as shown in 11b and 21b).Each direct current unit chip only has half the time to have electric current to flow through.Therefore, the utilance of chip light emitting area only has 50%, and luminous efficiency is low.
Fig. 2 a, Fig. 2 b, Fig. 2 c show respectively equivalent circuit diagram and the schematic diagram of an embodiment of luminescence chip of the present invention.In order to improve chip light emitting area utilization, improve luminous efficiency, the invention provides a kind of new luminescence chip 100, , a unit chip 22 in the direct current unit chip of unit chip 12 in the direct current unit chip of the string series connection of first in Fig. 1 a and the second string series connection is merged into a common light unit chip 50 with two arrays of electrodes, make common light unit core 50 no longer there is rectification function, but, common light unit chip 50 is all luminous at positive half cycle and the negative half period of alternating current, improve the utilance of chip light emitting area, improve luminous efficiency.
Fig. 2 b shows: luminescence chip 100 comprises: dielectric substrate (not indicating in the drawings), a unit chipset and a pair of pad.Unit chipset comprises: luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 50.A pair of pad comprises: the first pad 10a and the second pad 10b.Luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 50, the first pad 10a and the second pad 10b, be formed in dielectric substrate, be separated from each other.
First group of electrode 501 and 502, the second luminous rectification unit chip 102 of the first luminous rectification unit chip 101, common light unit core 50 of connecting forms the first luminescence units that are connected in series.Second group of electrode 511 and the 512, the 3rd luminous rectification unit chip 103 of the 4th luminous rectification unit chip 104, common light unit core 50 of connecting forms the second luminescence units that are connected in series.
The luminescence unit reverse parallel connection that the first luminescence unit being connected in series and second is connected in series, is electrically connected to the first pad 10a and the second pad 10b.
The positive half cycle of alternating current is inputted from the first pad 10a, and the luminescence unit that first string of flowing through is connected in series, from the second pad 10b output.
The negative half period of alternating current is inputted from the second pad 10b, and the luminescence unit that second string of flowing through is connected in series, from the first pad 10a output.
At positive half cycle and the negative half period of alternating current, common light unit core 50 is all luminous, therefore, has improved the utilance of chip light emitting area, improves luminous efficiency.
An embodiment: the area that luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 50 are set is identical, the utilance of chip light emitting area reaches 60%, and the utilance of the chip light emitting area than traditional 50% has improved 20%.
The first pad 10a and the second pad 10b can be formed in dielectric substrate, as shown in Figure 2 b.Or the first pad 10a is formed on the first luminous rectification unit chip 101 and the 3rd luminous rectification unit chip 103; The second pad 10b is formed on the second luminous rectification unit chip 102 and the 4th luminous rectification unit chip 104, as shown in Figure 2 c.
Fig. 3 a shows that traditional reverse parallel connection exchanges the equivalent circuit diagram of semiconductor chip.Fig. 3 b and Fig. 3 c show respectively equivalent circuit diagram and the schematic diagram of the embodiment of luminescence chip of the present invention.
One of structure of traditional interchange chip is as shown in Figure 3 a: the first luminous rectification unit being connected in series 11,12,13,14,15 and the second luminous rectification unit being connected in series 21,22,23,24,25 reverse parallel connections, be connected with 10b with the second pad 10a with the first pad of alternating current input.Therefore, each luminous rectification unit only has half the time to have electric current to flow through.Therefore, the utilance of chip light emitting area only has 50%.
In order to improve the utilance of chip light emitting area, a unit chip 22 in the luminous rectification unit of unit chip 12 in the luminous rectification unit of the first string series connection and the second string series connection is merged into a common light unit chip 60 with two arrays of electrodes; A unit chip 24 in the luminous rectification unit of unit chip 14 in the luminous rectification unit of the first string series connection and the second string series connection is merged into a common light unit chip 70 with two arrays of electrodes, as shown in Figure 3 b.Make common light unit chip 60 and 70 no longer have rectification function, still, common light unit chip 60 and the 70 positive half cycles at alternating current and negative half period are all luminous, therefore, improve the utilance of chip light emitting area, improve luminous efficiency.
Fig. 3 c shows: luminescence chip 100 comprises: dielectric substrate (not indicating in the drawings), a unit chipset and a pair of pad.Unit chipset comprises: luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 60, middle luminous rectification unit chip the 112, the second middle luminous rectification unit chip 122 of common light unit core 70, first, the first pad 10a and the second pad 10b.
Luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 60, middle luminous rectification unit chip the 112, the second middle luminous rectification unit chip 122 of common light unit core 70, first, the first pad 10a and the second pad 10b, be formed in dielectric substrate, be separated from each other.
First group of electrode 701 and 702, the second luminous rectification unit chip 102 of luminous rectification unit chip 112 in the middle of first group of electrode 601 and 602, first of the first luminous rectification unit chip 101, common light unit core 60, common light unit core 70 of connecting forms the first luminescence units that are connected in series.
Second group of electrode 611 and the 612, the 3rd luminous rectification unit chip 103 of luminous rectification unit chip 122 in the middle of second group of electrode 711 and 712, second of the 4th luminous rectification unit chip 104, common light unit core 70, common light unit core 60 of connecting forms the second luminescence units that are connected in series.
The luminescence unit reverse parallel connection that the first luminescence unit being connected in series and second is connected in series, is electrically connected to the first pad 10a and the second pad 10b.
The positive half cycle of alternating current is inputted from the first pad 10a, and the luminescence unit that first string of flowing through is connected in series, from the second pad 10b output.
The negative half period of alternating current is inputted from the second pad 10b, and the luminescence unit that second string of flowing through is connected in series, from the first pad 10a output.
At positive half cycle and the negative half period of alternating current, common light unit core 60 and common light unit core 70 are all luminous, therefore, have improved the utilance of chip light emitting area, improve luminous efficiency.
An embodiment: the area that luminous rectification unit chip the 103, the 4th luminous rectification unit chip 104 of the luminous rectification unit chip the 102, the 3rd of the first luminous rectification unit chip 101, second, common light unit core 60, the luminous rectification unit chip 101 of common light unit core 70, first, the second middle luminous rectification unit chip 122 are set is identical, the utilance of chip light emitting area reaches 62.5%, and the utilance of the chip light emitting area than traditional 50% has improved 25%.
Note a: luminescence chip can comprise X common light unit chip, X >=2.Each common light unit chip has two arrays of electrodes; Between any two common light unit chips, two luminous rectification unit chips in centre are set, luminous rectification unit chip in the middle of first is connected with first group of electrode of adjacent two common light unit chips, and the second luminous rectification unit chip in centre is connected with second group of electrode of adjacent two common light unit chips.There is (X-1) individual first middle luminous rectification unit chip, have (X-1) individual second middle luminous rectification unit chip.
Fig. 4 shows the schematic diagram of the embodiment of luminescence chip of the present invention.The embodiment that the embodiment that Fig. 4 shows and Fig. 2 c show is similar.Difference is: the embodiment that Fig. 2 c shows comprises a unit chipset and a pair of pad, and the embodiment that Fig. 4 shows comprises two unit chipsets and two pairs of pads, therefore, can input two alternating currents simultaneously.The phase place of two alternating currents is set, and the light that two unit chipsets are sent superposes mutually, alleviates stroboscopic.
Luminescence chip 100 comprises: dielectric substrate (not showing in the drawings), first module chipset, second unit chipset, first pair of pad, second pair of pad.
First module chipset comprises: the first luminous rectification unit chip 101a, the second luminous rectification unit chip 102a, the 3rd luminous rectification unit chip 103a, the 4th luminous rectification unit chip 104a, a common light unit chip 80.
First group of electrode 801 and 802, the second luminous rectification unit chip 102a of the first luminous rectification unit chip 101a, common light unit chip 80 of connecting forms the first luminescence unit being connected in series.
Second group of electrode 811 and the 812, the 3rd luminous rectification unit chip 103a of the 4th luminous rectification unit chip 104a, common light unit chip 80 of connecting forms the second luminescence unit being connected in series.
First pair of pad comprises: the first pad 10a, the second pad 10b.
Second unit chipset comprises: the first luminous rectification unit chip 101b, the second luminous rectification unit chip 102b, the 3rd luminous rectification unit chip 103b, the 4th luminous rectification unit chip 104b, a common light unit chip 90.
First group of electrode 901 and 902, the second luminous rectification unit chip 102b of the first luminous rectification unit chip 101b, common light unit chip 90 of connecting forms the luminescence unit that M-1 is connected in series.
Second group of electrode 911 and the 912, the 3rd luminous rectification unit chip 103b of the 4th luminous rectification unit chip 104b, common light unit chip 90 of connecting forms the luminescence unit that M-2 is connected in series.
Second pair of pad comprises: the first pad 20a, the second pad 20b.
The positive half cycle of the first alternating current is inputted from the first pad 10a, and the first luminescence unit being connected in series of the first module of flowing through chipset, from the second pad 10b output.
The negative half period of the first alternating current is inputted from the second pad 10b, and the second luminescence unit being connected in series of the first module of flowing through chipset, from the first pad 10a output.
The positive half cycle of the second alternating current is inputted from the first pad 20a, and the luminescence unit that the M-1 of the second unit chipset of flowing through is connected in series, from the second pad 20b output.
The negative half period of the second alternating current is inputted from the second pad 20b, and the luminescence unit that the M-2 of the second unit chipset of flowing through is connected in series, from the first pad 20a output.
At positive half cycle and the negative half period of the first alternating current, common light unit core 80 is all luminous, and at positive half cycle and the negative half period of the second alternating current, common light unit core 90 is all luminous, therefore, has improved the utilance of chip light emitting area.
An embodiment: the phase difference of the first and second alternating currents is 90 °.
Note a: luminescence chip can comprise N unit chipset, and the N corresponding with N unit chipset be to pad, N >=2, the luminescence chip that Fig. 4 shows comprises 2 unit chipsets, N=2.
The embodiment that the embodiment of the luminescence chip that Fig. 5 shows and Fig. 3 c show is similar.Difference is: the embodiment that Fig. 3 c shows comprises a unit chipset and a pair of pad, and the embodiment that Fig. 5 shows comprises two unit chipsets and two pairs of pads, therefore, can input two alternating currents simultaneously.The phase place of two alternating currents is set, and the light that two unit chipsets are sent superposes mutually, alleviates stroboscopic.
Luminescence chip 100 comprises: dielectric substrate (not showing in the drawings), first module chipset, second unit chipset, first pair of pad, second pair of pad.
First module chipset comprises: luminous rectification unit chip 122a in the middle of luminous rectification unit chip 112a, second in the middle of the first luminous rectification unit chip 101a, the second luminous rectification unit chip 102a, the 3rd luminous rectification unit chip 103a, the 4th luminous rectification unit chip 104a, common light unit chip 60a, common light unit chip 70a, first.First pair of pad comprises: the first pad 10a, the second pad 10b.
First group of electrode 701a and 702a, the second luminous rectification unit chip 102a of luminous rectification unit chip 112a, common light unit core 70a in the middle of first group of electrode 601a of the first luminous rectification unit chip 101a, common light unit core 60a and 602a, first of connecting forms the first luminescence unit being connected in series.
Second group of electrode, the 3rd luminous rectification unit chip 103a of luminous rectification unit chip 122a, common light unit chip 60a in the middle of second group of electrode, second of the 4th luminous rectification unit chip 104a, common light unit core 70a that connect forms the second luminescence unit being connected in series.
Second unit chipset comprises: luminous rectification unit chip 122b in the middle of luminous rectification unit chip 112b, second in the middle of the first luminous rectification unit chip 101b, the second luminous rectification unit chip 102b, the 3rd luminous rectification unit chip 103b, the 4th luminous rectification unit chip 104b, common light unit chip 60b, common light unit chip 70b, first.Second pair of pad comprises: the first pad 20a, the second pad 20b.
Connect first group of electrode of the first luminous rectification unit chip 101b, common light unit core 60b, first group of electrode, the second luminous rectification unit chip 102b of first middle luminous rectification unit chip 112b, common light unit core 70b form the luminescence unit that Q-1 is connected in series.
Connect second group of electrode of the 4th luminous rectification unit chip 104b, common light unit core 70b, second group of electrode, the 3rd luminous rectification unit chip 103b of second middle luminous rectification unit chip 122b, common light unit chip 60b form the luminescence unit that Q-2 is connected in series.
The positive half cycle of the first alternating current is inputted from the first pad 10a, and the first luminescence unit being connected in series of the first module of flowing through chipset, from the second pad 10b output.
The negative half period of the first alternating current is inputted from the second pad 10b, and the second luminescence unit being connected in series of the first module of flowing through chipset, from the first pad 10a output.
The positive half cycle of the second alternating current is inputted from the first pad 20a, and the luminescence unit that the Q-1 of the second unit chipset of flowing through is connected in series, from the second pad 20b output.
The negative half period of the second alternating current is inputted from the second pad 20b, and the luminescence unit that the Q-2 of the second unit chipset of flowing through is connected in series, from the first pad 20a output.
At positive half cycle and the negative half period of the first alternating current, common light unit core 60a and 70a are luminous, and at positive half cycle and the negative half period of the second alternating current, common light unit core 60b and 70b are luminous, therefore, have improved the utilance of chip light emitting area.
An embodiment: the phase difference of the first and second alternating currents is 90 °.
Note: (1) luminescence chip can comprise P unit chipset, and with P P the pad that unit chipset is corresponding, P >=2.
(2) luminescence chips can comprise P unit chipset, each unit chipset comprises X common light unit chip, between any two adjacent common light unit chips, have two luminous rectification unit chips in centre, two luminous rectification unit chips in centre respectively second group of electrode of the first combination of the common light unit chip adjacent with two are connected.
Finally it should be noted that: above embodiment only, in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to aforementioned embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned embodiment is modified, or part technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the present invention.
Claims (8)
1. a luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair of pad;
Described unit chipset comprises the first luminous rectification unit chip; The second luminous rectification unit chip; The 3rd luminous rectification unit chip; The 4th luminous rectification unit chip; A common light unit chip;
Described common light unit chip comprises first group of electrode and second group of electrode;
Described a pair of pad comprises the first pad and the second pad;
Described the first luminous rectification unit chip, described the second luminous rectification unit chip, described the 3rd luminous rectification unit chip, described the 4th luminous rectification unit chip and described common light unit chip are formed in described dielectric substrate, and are separated from each other;
Described first group of electrode of described the first luminous rectification unit chip, described common light unit chip, described the second luminous rectification unit chip form first and are connected in series luminescence unit;
Described second group of electrode of described the 4th luminous rectification unit chip, described common light unit chip, described the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, described first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, form and be electrically connected to described the first pad and the second pad, described luminescence chip can directly be driven by alternating current, make described common light unit chip all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
2. according to the luminescence chip of claim 1, its feature in, described luminescence chip comprises LED luminescence chip and OLED luminescence chip.
3. according to the luminescence chip of claim 1, its feature in, described luminescence chip, comprising: N unit chipset, N >=2;
With described N the N that unit chipset is corresponding to pad;
M unit chipset in described N unit chipset comprises: the luminous rectification unit chip of M1; The luminous rectification unit chip of M2; The luminous rectification unit chip of M3; The luminous rectification unit chip of M4; M common light unit chip; Wherein, N >=M >=2;
N in described N unit chipset described common light unit chip comprises respectively first group
Electrode and second group of electrode;
The M corresponding with described M unit chipset comprises M1 pad and M2 pad to pad;
The luminous rectification unit chip of described M1, the luminous rectification unit chip of described M2, the luminous rectification unit chip of described M3, the luminous rectification unit chip of described M4 and the described M common light unit chip of described M unit chipset are formed in described dielectric substrate, and are separated from each other;
Described first group of electrode, the luminous rectification unit chip of described M2 of the luminous rectification unit chip of described M1, described M common light unit chip form M-1 and are connected in series luminescence unit; Described second group of electrode, the luminous rectification unit chip of described M3 of the luminous rectification unit chip of described M4, described M common light unit chip form M-2 and are connected in series luminescence unit; Wherein, described M-1 is connected in series luminescence unit and M-2 is connected in series luminescence unit reverse parallel connection, form electrical connection with corresponding described M1 pad and M2 pad, described M unit chipset can directly be driven the alternating current of pad input from described M, make described M common light unit chip all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
4. according to the luminescence chip of claim 3, its feature in, the phase place of the alternating current of inputting from a pair of described pad is from from another, the phase place to the alternating current of described pad input has a predetermined angular different, the light sending from a unit chipset and the light sending from another unit chipset are superposeed mutually, reduce stroboscopic.
5. a luminescence chip, comprising:
Dielectric substrate;
A unit chipset; A pair of pad;
Described unit chipset comprises the first luminous rectification unit chip; The second luminous rectification unit chip; The 3rd luminous rectification unit chip; The 4th luminous rectification unit chip; X common light unit chip, X >=2;
Described in each, common light unit chip comprises respectively first group of electrode and second group of electrode;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two described common light unit chips, luminous rectification unit chip in the middle of total (X-1) individual described first, luminous rectification unit chip in the middle of total (X-1) individual described second;
Described in the middle of first luminous rectification unit chip connect with described first group of electrode of adjacent two described common light unit chips, described the second luminous rectification unit chip in centre is connected with described second group of electrode of adjacent two described common light unit chips;
Described a pair of pad comprises the first pad and the second pad;
In the middle of described the first luminous rectification unit chip, described the second luminous rectification unit chip, described the 3rd luminous rectification unit chip, described the 4th luminous rectification unit chip, a described X common light unit chip, described (X-1) individual first, in the middle of luminous rectification unit chip and described (X-1) individual second, luminous rectification unit chip is formed in described dielectric substrate, and is separated from each other;
In the middle of described first group of electrode, (X-1) individual described first of described the first luminous rectification unit chip, an X described common light unit chip, luminous rectification unit chip, described the second luminous rectification unit chip form first and are connected in series luminescence unit;
In the middle of described second group of electrode, (X-1) individual described second of described the 4th luminous rectification unit chip, an X described common light unit chip, luminous rectification unit chip, described the 3rd luminous rectification unit chip form second and are connected in series luminescence unit;
Wherein, described first is connected in series luminescence unit and second is connected in series luminescence unit reverse parallel connection, form and be electrically connected to described the first pad and the second pad, described luminescence chip can directly be driven by alternating current, make described in each common light unit chip luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
6. according to the luminescence chip of claim 5, its feature in, described luminescence chip comprises LED luminescence chip and OLED luminescence chip.
7. according to the luminescence chip of claim 5, its feature in, described luminescence chip, comprising:
P unit chipset, P >=2;
With described P the P that unit chipset is corresponding to pad;
Q unit chipset in described P unit chipset comprises: the luminous rectification unit chip of Q1; The luminous rectification unit chip of Q2; The luminous rectification unit chip of Q3; The luminous rectification unit chip of Q4; Wherein, P >=Q >=2;
Each unit chipset of described P unit chipset comprises respectively X common light unit chip, X >=2;
Described in each, common light unit chip comprises respectively first group of electrode and second group of electrode;
Luminous rectification unit chip in the middle of luminous rectification unit chip and second in the middle of having first between any two described common light unit chips in each group unit chip in described P unit chipset, luminous rectification unit chip in the middle of total (X-1) individual described first, luminous rectification unit chip in the middle of total (X-1) individual described second; Described in the middle of first luminous rectification unit chip connect with described first group of electrode of adjacent two described common light unit chips, described the second luminous rectification unit chip in centre is connected with described second group of electrode of adjacent two described common light unit chips;
The Q corresponding with described Q unit chipset comprises Q1 pad and Q2 pad to pad;
In the middle of the whole described luminous rectification unit chip of described P group unit chip, whole described common light unit chip, whole described first, in the middle of luminous rectification unit chip, whole described second, luminous rectification unit chip is formed in described dielectric substrate, and is separated from each other;
In the middle of the luminous rectification unit chip of described Q1 of Q unit chipset in described P unit chipset, described first group of electrode, (X-1) of a described X common light unit chip individual described first, luminous rectification unit chip, the luminous rectification unit chip of described Q2 form Q-1 and are connected in series luminescence unit;
In the middle of the luminous rectification unit chip of described Q4 of Q unit chipset in described P unit chipset, described second group of electrode, (X-1) of a described X common light unit chip individual described second, luminous rectification unit chip, the luminous rectification unit chip of described Q3 form Q-2 and are connected in series luminescence unit;
Wherein, described Q-1 is connected in series luminescence unit and Q-2 is connected in series luminescence unit reverse parallel connection, form electrical connection with corresponding described Q1 pad and Q2 pad, described Q unit chipset can directly be driven the alternating current of pad input from described Q, make described X common light unit chip of described Q unit chipset all luminous at positive half cycle and the negative half period of the alternating current of input, improve chip light emitting area utilization, improve luminous efficiency.
8. according to the luminescence chip of claim 7, its feature in, the phase place of the alternating current of inputting from a pair of described pad is from from another, the phase place to the alternating current of described pad input has a predetermined angular different, the light sending from a unit chipset and the light sending from another unit chipset are superposeed mutually, reduce stroboscopic.
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| CN201410067629.8A CN103985705A (en) | 2014-02-22 | 2014-02-22 | AC high-voltage luminescence chip with high chip luminescence area utilization rate |
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Cited By (1)
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