CN204008696U - A kind of flexible capacitance type acceleration transducer - Google Patents
A kind of flexible capacitance type acceleration transducer Download PDFInfo
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- CN204008696U CN204008696U CN201420400703.9U CN201420400703U CN204008696U CN 204008696 U CN204008696 U CN 204008696U CN 201420400703 U CN201420400703 U CN 201420400703U CN 204008696 U CN204008696 U CN 204008696U
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Abstract
The utility model relates to acceleration analysis technical field, discloses a kind of flexible capacitance type acceleration transducer, comprising: flexible base, board; Top electrode, is located at the upper surface of described flexible base, board; Bottom electrode, is located at the lower surface of described flexible base, board; Articulamentum, it comprises articulamentum and lower articulamentum, described upper articulamentum is located between described flexible base, board and top electrode and is connected described flexible base, board and top electrode, and described lower articulamentum is located between described flexible base, board and bottom electrode and is connected described flexible base, board and bottom electrode.In the utility model, MEMS device is directly produced on flexible base, board, technique and simple in structure, cost is lower, and prepared acceleration transducer can be applied on the body surface of any type, shape and size.
Description
Technical field
The utility model relates to acceleration analysis technical field, relates in particular to a kind of high sensitivity flexible capacitance type acceleration transducer of preparing based on MEMS micro-nano process technology.
Background technology
Acceleration transducer is a kind of electronic equipment that can measure accelerating force, closely bound up with the mankind's life.At present the application of acceleration transducer is more and more extensive, such as automotive safety (air bag, anti-lock braking system unify pull-in control system), game control, image automatic turning and passometer etc.From developing rapidly of eighties of last century the eighties MEMS (micro electro mechanical system) (MEMS) technology, increasing advanced technology and equipment appear in all trades and professions, and along with the fast development of integrated circuit and semicon industry, utilizing new technique to prepare micro-nano sensor also becomes one of global study hotspot.Utilize miniature acceleration sensor prepared by micro electro mechanical system (MEMS) technology to there is the advantages such as volume is little, low in energy consumption and lightweight, and cost is also relatively low, has had application widely in more field especially consumer electronics field.
Acceleration transducer can be divided into following type according to principle of work: piezoresistance type acceleration sensor, piezoelectric acceleration transducer, resonant mode acceleration transducer and capacitance acceleration transducer.Wherein, the advantage of capacitance acceleration transducer is high sensitivity, low temperature effects and band power dissipation, has obtained a large amount of concerns and research in recent years.Gap between two surfaces of the sensor-based pair of electrodes of capacitance measurement changes, and the electric capacity between these two surfaces depends on surface area and the distance between them.
Please refer to Fig. 1, Fig. 1 is the diagrammatic cross-section of the existing condenser type acceleration sensor 30 based on MEMS.As shown in Figure 1, existing condenser type acceleration sensor 30 mainly has a non-monocrystalline silicon substrate 32, for example substrate of glass or quartz substrate, one cantilever beam texture 34, it has a polysilicon beam texture 36 and a polysilicon supporting member 38, polysilicon supporting member 38 is located in non-monocrystalline silicon substrate 32, be used for fixing polysilicon beam texture 36, and make to there is a distance between polysilicon beam texture 36 and amorphous silicon substrate 32, and polysilicon beam texture 36 has a movable end, be provided with a movable electrode 40 in movable end part, one fixed electorde 42 is located in the non-monocrystalline silicon substrate 32 of movable electrode 40 belows, movable electrode 40 and fixed electorde 42 are used for respectively the upper/lower electrode of a capacity plate antenna 44 of being used as condenser type acceleration sensor 30, an and control circuit, for example thin film transistor (TFT) (TFT, Thin FilmTransistor) control circuit 46 is located in non-monocrystalline silicon substrate 32, and be electrically connected on cantilever beam texture 34 and capacity plate antenna 44, be used for receiving, process and transmit the signal that capacity plate antenna 44 is exported.
In the time that the accelerating force of vertical direction puts on existing condenser type acceleration sensor 30, the movable electrode 40 of being located at the movable end of polysilicon beam texture 36 can receive the power of vertical direction, make the movable end of polysilicon beam texture 36 produce the vibration of beam mode, and and fixed electorde 42 between produce relative position change, also make the capacitance in capacity plate antenna 44 change thereupon, utilize a differential amplifier or other electronic components that the capacitance variation amount receiving is carried out to signal processing by TFT control circuit 46, to obtain the size of acceleration force to be measured.In addition, because amorphous silicon substrate 32 can be made up of quartz, quartzy fusing point is higher again, and therefore the TFT control circuit 46 of existing utility model can be a high temperature polysilicon TFT control circuit.
But existing condenser type acceleration sensor is produced in the substrate of the rigid material such as glass and quartz, the device of making is can not fold or bending rigid structure, thereby limit the measurement of MEMS sensor on curved face object surface, and at existing condenser type acceleration sensor, in the time that substrate is quartz, because quartzy fusing point is higher, requiring TFT control circuit is high temperature polysilicon TFT control circuit, increased manufacturing cost, in addition, its processing technology and structure are comparatively complicated.Therefore, how to produce a kind of technique and simple in structure, cost lower and can flexible Application be important research topic at present in the capacitance acceleration transducer of different objects surface measurement.
Utility model content
Technical problem to be solved in the utility model is how to overcome that existing condenser type acceleration sensor can not fold or bending, manufacturing cost higher and processing technology and the comparatively complicated defect of structure.
In order to solve the problems of the technologies described above, it is a kind of for measuring the flexible capacitance type acceleration transducer of accelerating force that the utility model provides, and it comprises:
Flexible base, board; Top electrode, is located at the upper surface of described flexible base, board; Bottom electrode, is located at the lower surface of described flexible base, board; Articulamentum, it comprises articulamentum and lower articulamentum, described upper articulamentum is located between described flexible base, board and top electrode and is connected described flexible base, board and top electrode, and described lower articulamentum is located between described flexible base, board and bottom electrode and is connected described flexible base, board and bottom electrode.
Wherein, described top electrode and bottom electrode are provided with pin part, and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit, and is encapsulated on circuit board.
Described articulamentum is made up of organic thin film or metallic film; Described articulamentum is by making with the excellent material of flexible base, board adhesive property.
Preferably, the thickness of described upper articulamentum and lower articulamentum is 50～500nm.
Preferably, the metallic film composition that described top electrode and bottom electrode are 100～2000nm by thickness.
Preferably, described upper and lower electrode and articulamentum are prepared gained by the graphical technique of MEMS.
Flexible capacitance type acceleration transducer of the present utility model, there is following beneficial effect: the utility model is directly produced on MEMS device on flexible base, board, there is certain deformability, this sensor can carry out to a certain degree folding or bending, its technique and simple in structure, cost is lower, the acceleration transducer of manufacturing can be applied in any type, on the body surface of shape and size, articulamentum of the present utility model bonds electrode and flexible base, board preferably in addition, having solved at present a lot of component failures is all and the poor technical matters of the direct adhesion of substrate.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of existing capacitance acceleration transducer;
Fig. 2 is the diagrammatic cross-section of flexible capacitance type acceleration transducer of the present utility model;
Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model.
In figure: 30-semiconductor acceleration sensor, the substrate of 32-non-monocrystalline silicon, 34-cantilever beam texture, 36-polysilicon beam texture, 38-polysilicon supporting member, 40-movable electrode, 42-fixed electorde, 44-capacity plate antenna, 1-flexible base, board, the upper articulamentum of 2-, 3-top electrode, articulamentum under 4-, 5-bottom electrode, 6-pin part.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the utility model is described in further detail.
Embodiment mono-:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, and flexible base, board 1, described flexible base, board 1 is polyethylene terephthalate (PET, polyethylene terephthalate); Top electrode 3, described top electrode 3 is gold (Au) or copper (Cu) metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Au or Cu metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is chromium (Cr) or titanium (Ti) metallic film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface at described PET flexible base, board forms on Cr or Ti metallic film and connects rete by the method for magnetron sputtering or electron beam evaporation, described Cr or Ti thickness of metal film are 50～100nm, be preferably 50nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by chemical solution etching method etching.
The upper surface sputter Au of articulamentum or Cu metallic film form top electrode rete on described, described Au or Cu thickness of metal film are 100～500nm, be preferably 200nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by chemical solution etching method etching.
By the method for magnetron sputtering or electron beam evaporation, form lower connection rete at the lower surface of described flexible base, board, described lower connection rete is made up of Cr or Ti metallic film, described Cr or Ti thickness of metal film are 50～100nm, be preferably 50nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by chemical solution etching method etching.
Lower surface sputter Au or Cu metallic film at described lower articulamentum are prepared bottom electrode rete, described Au or Cu thickness of metal film are 100～500nm, be preferably 200nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by chemical solution etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment bis-:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is polyimide (PI, polyimide); Top electrode 3, described top electrode 3 is Au or Cu metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Au or Cu metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is Cr or Ti metallic film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface at described PI flexible base, board forms on Cr or Ti metallic film and connects rete by the method for magnetron sputtering or electron beam evaporation, described Cr or Ti thickness of metal film are 200～300nm, be preferably 200nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by physical dry etching method etching.
The upper surface sputter Au of articulamentum or Cu metallic film form top electrode rete on described, described Au or Cu thickness of metal film are 800～1300nm, be preferably 1000nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by physical dry etching method etching.
By the method for magnetron sputtering or electron beam evaporation, form lower connection rete at the lower surface of described flexible base, board, described lower connection rete is made up of Cr or Ti metallic film, described Cr or Ti thickness of metal film are 200～300nm, be preferably 200nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by physical dry etching method etching.
Lower surface sputter Au or Cu metallic film at described lower articulamentum are prepared bottom electrode rete, described Au or Cu thickness of metal film are 800～1300nm, be preferably 1000nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by physical dry etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment tri-:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is dimethyl silicone polymer (PDMS); Top electrode 3, described top electrode 3 is Au or Cu metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Au or Cu metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is Cr or Ti metallic film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface at described PDMS flexible base, board forms on Cr or Ti metallic film and connects rete by the method for magnetron sputtering or electron beam evaporation, described Cr or Ti thickness of metal film are 200～300nm, be preferably 200nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by physical dry etching method etching.
The upper surface sputter Au of articulamentum or Cu metallic film form top electrode rete on described, described Au or Cu thickness of metal film are 800～1300nm, be preferably 1000nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by physical dry etching method etching.
By the method for magnetron sputtering or electron beam evaporation, form lower connection rete at the lower surface of described flexible base, board, described lower connection rete is made up of Cr or Ti metallic film, described Cr or Ti thickness of metal film are 400～500nm, be preferably 500nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by physical dry etching method etching.
Lower surface sputter Au or Cu metallic film at described lower articulamentum are prepared bottom electrode rete, described Au or Cu thickness of metal film are 1500～2000nm, be preferably 2000nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by physical dry etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment tetra-:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is PET; Top electrode 3, described top electrode 3 is platinum (Pt) or silver (Ag) metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Pt or Ag metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is Cu or tungsten (W) metallic film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface at described PET flexible base, board forms on Cu or W metallic film and connects rete by the method for magnetron sputtering or electron beam evaporation, described Cu or W thickness of metal film are 50～200nm, be preferably 150nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by chemical solution etching method etching.
The upper surface sputter Pt of articulamentum or Ag metallic film form top electrode rete on described, described Pt or Ag thickness of metal film are 100～800nm, be preferably 400nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by chemical solution etching method etching.
By the method for magnetron sputtering or electron beam evaporation, form lower connection rete at the lower surface of described flexible base, board, described lower connection rete is made up of Cu or W metallic film, described Cu or W thickness of metal film are 50～200nm, be preferably 150nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by chemical solution etching method etching.
Lower surface sputter Pt or Ag metallic film at described lower articulamentum are prepared bottom electrode rete, described Pt or Ag thickness of metal film are 100～800nm, be preferably 400nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by chemical solution etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment five:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is PI; Top electrode 3, described top electrode 3 is Pt or Ag metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Pt or Ag metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is Cu or W metallic film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface at described PI flexible base, board forms on Cu or W metallic film and connects rete by the method for magnetron sputtering or electron beam evaporation, described Cu or W thickness of metal film are 300～500nm, be preferably 400nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by chemical solution etching method etching.
The upper surface sputter Pt of articulamentum or Ag metallic film form top electrode rete on described, described Pt or Ag thickness of metal film are 1000～2000nm, be preferably 1500nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by chemical solution etching method etching.
By the method for magnetron sputtering or electron beam evaporation, form lower connection rete at the lower surface of described flexible base, board, described lower connection rete is made up of Cu or W metallic film, described Cu or W thickness of metal film are 300～500nm, be preferably 400nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by chemical solution etching method etching.
Lower surface sputter Pt or Ag metallic film at described lower articulamentum are prepared bottom electrode rete, described Pt or Ag thickness of metal film are 1000～2000nm, be preferably 1500nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by chemical solution etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment six:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is PI; Top electrode 3, described top electrode 3 is Pt or Au metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Pt or Au metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is PDMS or polymethylmethacrylate (PMMA, polymethylmethacrylate) organic thin film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface high speed spin coating PDMS or PMMA organic thin film at described PI flexible base, board form top electrode rete, to keep the organic homogeneity of described PI flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 100～200nm, be preferably 100nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by physical dry etching method etching.
The upper surface sputter Pt of articulamentum or Au metallic film form top electrode rete on described, described Pt or Au thickness of metal film are 200～600nm, be preferably 300nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by physical dry etching method etching.
Lower surface high speed spin coating PDMS or PMMA organic thin film formation top electrode rete with spin-coating method at described flexible base, board, to keep the organic homogeneity of described PI flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 100～200nm, be preferably 100nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by physical dry etching method etching.
Lower surface sputter Pt or Au metallic film at described lower articulamentum are prepared bottom electrode rete, described Pt or Au thickness of metal film are 200～600nm, be preferably 300nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by physical dry etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment seven:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is PDMS; Top electrode 3, described top electrode 3 is Pt or Au metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Pt or Au metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is PDMS or PMMA organic thin film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface high speed spin coating PDMS or PMMA organic thin film at described PDMS flexible base, board form top electrode rete, to keep the organic homogeneity of described PDMS flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 250～350nm, be preferably 300nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by physical dry etching method etching.
The upper surface sputter Pt of articulamentum or Au metallic film form top electrode rete on described, described Pt or Au thickness of metal film are 900～1400nm, be preferably 1200nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by physical dry etching method etching
Lower surface high speed spin coating PDMS or PMMA organic thin film formation top electrode rete with spin-coating method at described flexible base, board, to keep the organic homogeneity of described PDMS flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 250～350nm, be preferably 300nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by physical dry etching method etching.
Lower surface sputter Pt or Au metallic film at described lower articulamentum are prepared bottom electrode rete, described Pt or Au thickness of metal film are 900～1400nm, be preferably 1200nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by physical dry etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Embodiment eight:
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the diagrammatic cross-section of the utility model flexible capacitance type acceleration transducer, as shown in Figure 2, flexible base, board 1, described flexible base, board 1 is PET; Top electrode 3, described top electrode 3 is Pt or Au metallic film, is located at the upper surface of described flexible base, board 1; Bottom electrode 5, described bottom electrode 5 is Pt or Au metallic film, is located at the lower surface of described flexible base, board 1; Articulamentum, described articulamentum is PDMS or PMMA organic thin film, it comprises articulamentum 2 and lower articulamentum 4, described upper articulamentum 2 is located between described flexible base, board 1 and top electrode 3 and is connected described flexible base, board 1 and top electrode 3, and described lower articulamentum 4 is located between described flexible base, board 1 and bottom electrode 5 and is connected described flexible base, board 1 and bottom electrode 5.
Wherein, Fig. 3 is the vertical view of flexible capacitance type acceleration transducer of the present utility model, as shown in Figure 3, described top electrode 3 is provided with pin part 6, described bottom electrode 5 is also correspondingly provided with pin part (this part is not shown, but corresponding with top electrode pin part 6), and described pin part forms by upper and lower electrode being carried out respectively to gold thread binding, described pin part is connected with peripheral circuit and is encapsulated on circuit board, draw for signal.
Upper surface high speed spin coating PDMS or PMMA organic thin film at described PET flexible base, board form top electrode rete, to keep the organic homogeneity of described PET flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 350～500nm, be preferably 500nm, then described upper connection rete is made into upper articulamentum by litho pattern metallization processes, then removes unnecessary upper articulamentum material by physical dry etching method etching.
The upper surface sputter Pt of articulamentum or Au metallic film form top electrode rete on described, described Pt or Au thickness of metal film are 1600～2000nm, be preferably 2000nm, and described top electrode rete is made into top electrode by litho pattern metallization processes, then remove unnecessary upper electrode material by physical dry etching method etching.
Lower surface high speed spin coating PDMS or PMMA organic thin film formation top electrode rete with spin-coating method at described flexible base, board, to keep the organic homogeneity of described PET flexible base, board surface institute spin coating, described PDMS or PMMA organic thin film thickness are 350～500nm, be preferably 500nm, then described lower connection rete is made into lower articulamentum by litho pattern metallization processes, then removes unnecessary lower articulamentum material by physical dry etching method etching.
Lower surface sputter Pt or Au metallic film at described lower articulamentum are prepared bottom electrode rete, described Pt or Au thickness of metal film are 1600～2000nm, be preferably 2000nm, and described bottom electrode rete is made into bottom electrode by litho pattern metallization processes, then remove unnecessary lower electrode material by physical dry etching method etching.
In the time having extraneous acceleration force to put on the flexible capacitance type acceleration transducer of the utility model embodiment, flexible base, board 1 can receive this acceleration force, make flexible base, board 1 that deformation occur, thereby the relative position of top electrode 3 and bottom electrode 5 changes, and then the area that causes capacitor element changes, capacitance in polar-plate-type electric capacity is changed thereupon, pin part by upper and lower electrode is connected with external circuit, utilize electronic component that the capacitance variation amount receiving is carried out to signal processing, to obtain the size of acceleration force to be measured.
Flexible capacitance type acceleration transducer in above embodiment is that MEMS device is directly produced on flexible base, board, technique and simple in structure, cost is lower, the acceleration transducer of manufacturing can be applied on the body surface of any type, shape and size, articulamentum of the present utility model is selected the material excellent with flexible base, board cohesiveness performance in addition, electrode and flexible base, board are bondd preferably, solved at present a lot of component failures and be all and the poor technical matters of the direct adhesion of substrate.
The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (7)
1. a flexible capacitance type acceleration transducer, is characterized in that, comprising:
Flexible base, board (1);
Top electrode (3), is located at the upper surface of described flexible base, board (1);
Bottom electrode (5), is located at the lower surface of described flexible base, board (1);
Articulamentum, it comprises articulamentum (2) and lower articulamentum (4), described upper articulamentum (2) is located between described flexible base, board (1) and top electrode (3) and is connected described flexible base, board (1) and top electrode (3), and described lower articulamentum (4) is located between described flexible base, board (1) and bottom electrode (5) and is connected described flexible base, board (1) and bottom electrode (5).
2. flexible capacitance type acceleration transducer as claimed in claim 1, it is characterized in that, described top electrode (3) and bottom electrode (5) are provided with pin part, described pin part is by upper and lower electrode (3,5) carrying out respectively gold thread binding forms, described pin part is connected with peripheral circuit, and is encapsulated on circuit board.
3. flexible capacitance type acceleration transducer as claimed in claim 2, is characterized in that, adopts the mode of physical deposition or spin coating to form metallic film or organic thin film on the upper and lower surface of flexible base, board, makes described articulamentum.
4. flexible capacitance type acceleration transducer as claimed in claim 3, is characterized in that, described articulamentum is by making with the excellent material of flexible base, board (1) adhesive property.
5. flexible capacitance type acceleration transducer as claimed in claim 4, is characterized in that, the thickness of described upper articulamentum (2) and lower articulamentum (4) is 50～500nm.
6. the flexible capacitance type acceleration transducer as described in claim 1-5 any one, is characterized in that, the metallic film composition that described top electrode (3) and bottom electrode (5) are 100～2000nm by thickness.
7. flexible capacitance type acceleration transducer as claimed in claim 6, is characterized in that, described upper and lower electrode (3,5) and articulamentum are prepared gained by the graphical technique of MEMS.
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| CN201420400703.9U CN204008696U (en) | 2014-07-18 | 2014-07-18 | A kind of flexible capacitance type acceleration transducer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707330A (en) * | 2016-11-25 | 2017-05-24 | 罗雷 | MEMS omnidirectional vibration sensing device |
| CN112815823A (en) * | 2020-12-31 | 2021-05-18 | 南京航空航天大学 | Flexible high-tensile-strain sensor based on flexible flat capacitor and preparation method and application thereof |
-
2014
- 2014-07-18 CN CN201420400703.9U patent/CN204008696U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707330A (en) * | 2016-11-25 | 2017-05-24 | 罗雷 | MEMS omnidirectional vibration sensing device |
| CN112815823A (en) * | 2020-12-31 | 2021-05-18 | 南京航空航天大学 | Flexible high-tensile-strain sensor based on flexible flat capacitor and preparation method and application thereof |
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| CB03 | Change of inventor or designer information |
Inventor after: Liu Rui Inventor after: Gu Wen Inventor after: Shen Fangping Inventor after: Ding Haiyan Inventor after: Qi Mingfeng Inventor before: Liu Rui Inventor before: Zhang Ting Inventor before: Gu Wen Inventor before: Shen Fangping Inventor before: Ding Haiyan Inventor before: Qi Mingfeng |
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| CB03 | Change of inventor or designer information |