CN204004992U - 多晶硅装置用内凹式合金膨胀节 - Google Patents
多晶硅装置用内凹式合金膨胀节 Download PDFInfo
- Publication number
- CN204004992U CN204004992U CN201420411122.5U CN201420411122U CN204004992U CN 204004992 U CN204004992 U CN 204004992U CN 201420411122 U CN201420411122 U CN 201420411122U CN 204004992 U CN204004992 U CN 204004992U
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- CN
- China
- Prior art keywords
- bellows
- product
- expansion joint
- polycrystalline silicon
- silicon device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 9
- 239000000956 alloy Substances 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Joints Allowing Movement (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420411122.5U CN204004992U (zh) | 2014-07-24 | 2014-07-24 | 多晶硅装置用内凹式合金膨胀节 |
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CN201420411122.5U CN204004992U (zh) | 2014-07-24 | 2014-07-24 | 多晶硅装置用内凹式合金膨胀节 |
Publications (1)
Publication Number | Publication Date |
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CN204004992U true CN204004992U (zh) | 2014-12-10 |
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CN201420411122.5U Active CN204004992U (zh) | 2014-07-24 | 2014-07-24 | 多晶硅装置用内凹式合金膨胀节 |
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CN (1) | CN204004992U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104500901A (zh) * | 2014-12-24 | 2015-04-08 | 洛阳双瑞万基钛业有限公司 | 一种镁电解高温氯气***的补偿装置及其使用方法 |
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2014
- 2014-07-24 CN CN201420411122.5U patent/CN204004992U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104500901A (zh) * | 2014-12-24 | 2015-04-08 | 洛阳双瑞万基钛业有限公司 | 一种镁电解高温氯气***的补偿装置及其使用方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nantong taiyangshen Machinery Co.,Ltd. Assignor: AEROSUN-TOLA EXPANSION JOINT Co.,Ltd. Contract record no.: X2021980008704 Denomination of utility model: Concave alloy expansion joint for polysilicon device Granted publication date: 20141210 License type: Common License Record date: 20210902 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nantong taiyangshen Machinery Co.,Ltd. Assignor: AEROSUN-TOLA EXPANSION JOINT Co.,Ltd. Contract record no.: X2023980050906 Denomination of utility model: Internal concave alloy expansion joints for polycrystalline silicon devices Granted publication date: 20141210 License type: Common License Record date: 20231209 |
|
EE01 | Entry into force of recordation of patent licensing contract |