CN203942502U - A kind of LTE efficient radio frequency power amplifier - Google Patents
A kind of LTE efficient radio frequency power amplifier Download PDFInfo
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- CN203942502U CN203942502U CN201420342998.9U CN201420342998U CN203942502U CN 203942502 U CN203942502 U CN 203942502U CN 201420342998 U CN201420342998 U CN 201420342998U CN 203942502 U CN203942502 U CN 203942502U
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Abstract
The utility model discloses a kind of LTE efficient radio frequency power amplifier, comprise input network, stabilizing network, transistor, biasing networks and output network; Described input network comprises the 3rd matching capacitance C3 and the 3rd coupling inductance L 3 that adopt conjugate impedance match mode to connect; Described stabilizing network comprises the first resistance R 1, the 5th inductance L 5 and the 5th capacitor C 5 that are connected in series; Described biasing networks comprises the first capacitance C1, the second capacitance C2, the first choke induction L1, the second choke induction L2, the 6th capacitor C 6, the 7th capacitor C 7, the 8th capacitor C 8, the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11; Described output network comprises and turns to capacitor C d, resonant capacitance Cx, resonant inductance Lx, the 4th matching capacitance C4 and the 4th coupling inductance L 4.The features such as the utility model radio-frequency power amplifier is applicable to 4G mobile communications network, and it is high to have operating efficiency, simple in structure, and cost is low.
Description
Technical field
The utility model relates to a kind of power amplifier, particularly a kind of Long Term Evolution (Long Term Evolution, LTE) high efficiency power amplifier.
Background technology
Afternoon on December 4th, 2013, Ministry of Industry and Information formally issued 4G licence plate to three large operators, China Mobile, China Telecom and CHINAUNICOM all obtain TD-LTE licence plate, this indicates that China enters the 4G epoch, also mean simultaneously the mobile communication system to China quality particularly efficiency of transmission have higher requirement.But, because a lot of traditional wireless device operating efficiencies are low, cause a large amount of wastings of resources, therefore how to improve communication system operating efficiency, the economic benefit that reduces operation cost and the energy consumption raising communications industry becomes the focus of research in the industry.
Radio-frequency power amplifier is as the core component of Wireless Telecom Equipment, and the end that it is positioned at transmitter, carries out power amplification by radiofrequency signal, to meet the requirement of transmitted power.Therefore the operating efficiency that, how to improve power amplifier is being related to the raising of the efficiency of transmission of Wireless Telecom Equipment.
Utility model content
(1) technical problem that will solve
In view of this, main purpose of the present utility model is to provide a kind of LTE high efficiency power amplifier, to improve the operating efficiency of power amplifier.
(2) technical scheme
For achieving the above object, the utility model provides a kind of LTE efficient radio frequency power amplifier, comprise input network, stabilizing network, transistor, biasing networks and output network, wherein radiofrequency signal is sent to described transistor through described input network, after being amplified by described transistor, export through described output network again, described stabilizing network makes described transistor be operated in absolute stability state, described biasing networks provides direct current biasing to respectively described transistorized grid and drain electrode, described input network comprises the 3rd matching capacitance C3 and the 3rd coupling inductance L 3 that adopt conjugate impedance match mode to connect, described stabilizing network comprises the first resistance R 1, the 5th inductance L 5 and the 5th capacitor C 5 that are connected in series, described biasing networks comprises the first capacitance C1, the second capacitance C2, the first choke induction L1, the second choke induction L2, the 6th capacitor C 6, the 7th capacitor C 7, the 8th capacitor C 8, the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11, described output network comprises and turns to capacitor C d, resonant capacitance Cx, resonant inductance Lx, the 4th matching capacitance C4 and the 4th coupling inductance L 4.
In such scheme, the input of this LTE efficient radio frequency power amplifier is connected in transistorized grid by the 3rd matching capacitance C3 and the second capacitance C2 successively.One end of described the 3rd coupling inductance L 3 is connected between the input and the 3rd matching capacitance C3 of this LTE efficient radio frequency power amplifier, other end ground connection.One end of described the first resistance R 1 is connected between the 3rd matching capacitance C3 and the second capacitance C2, and the other end is successively by the 5th inductance L 5 and the 5th capacitor C 5 ground connection.One end of described the second choke induction L2 is connected between the second capacitance C2 and transistorized grid, the other end is connected with DC power supply VGS, described the 6th capacitor C 6, the 7th capacitor C 7 and the 8th capacitor C 8 one end parallel with one another are connected in VGS power end, the equal ground connection of the other end.
In such scheme, described transistorized drain electrode is connected in the output of this LTE efficient radio frequency power amplifier successively by the first capacitance C1, resonant capacitance Cx, resonant inductance Lx and the 4th coupling inductance L 4.One end of described the first choke induction L1 is connected between the first capacitance C1 and transistorized drain electrode, the other end is connected with DC power supply VDS, described the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11 one end parallel with one another are connected in VDS power end, the equal ground connection of the other end.Described one end that turns to capacitor C d is connected between the first capacitance C1 and resonant capacitance Cx, other end ground connection.One end of described the 4th matching capacitance C4 is connected in resonant inductance Lx and the 4th mates between inductance L 4, other end ground connection.
(3) beneficial effect
Can find out from technique scheme, the utlity model has following beneficial effect:
1, the utility model provide LTE efficient radio frequency power amplifier, all adopt LC resonant network to carry out impedance matching to radio-frequency (RF) power amplifier circuit owing to inputting network and output network, make the utility model radio-frequency power amplifier can in LTE frequency range, export larger power, and circuit structure is simple, easily realize.
2, the utility model provide LTE efficient radio frequency power amplifier, owing to accessing high frequency the first choke induction L1 and the second choke induction L2 between transistor base and drain electrode and power supply, so also can obtain enough large power output while having ensured circuit low pressure.
3, the utility model provide LTE efficient radio frequency power amplifier, because transistor is operated in switching mode, when transistor work, be equivalent to a switch, make signal very low through transistorized loss, so the utlity model has very high operating efficiency.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of LTE efficient radio frequency power amplifier of the present utility model.
Fig. 2 is the equivalent circuit diagram of output network in LTE efficient radio frequency power amplifier of the present utility model.
Fig. 3 is the equivalent circuit diagram of inputting network in LTE efficient radio frequency power amplifier of the present utility model.
Fig. 4 is power gain and the power added efficiency of LTE efficient radio frequency power amplifier of the present utility model in the time of 2.5GHz.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the utility model is further described.
As shown in Figure 1, Fig. 1 is the circuit theory diagrams of LTE efficient radio frequency power amplifier of the present utility model.This LTE efficient radio frequency power amplifier is applicable to LTE communication system, comprise input network, stabilizing network, transistor, biasing networks and output network, wherein radiofrequency signal is sent to described transistor through described input network, after being amplified by described transistor, export through described output network again, described stabilizing network makes described transistor be operated in absolute stability state, described biasing networks provides direct current biasing to respectively described transistorized grid and drain electrode, described input network comprises the 3rd matching capacitance C3 and the 3rd coupling inductance L 3 that adopt conjugate impedance match mode to connect, described stabilizing network comprises the first resistance R 1, the 5th inductance L 5 and the 5th capacitor C 5 that are connected in series, described biasing networks comprises the first capacitance C1, the second capacitance C2, the first choke induction L1, the second choke induction L2, the 6th capacitor C 6, the 7th capacitor C 7, the 8th capacitor C 8, the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11, described output network comprises and turns to capacitor C d, resonant capacitance Cx, resonant inductance Lx, the 4th matching capacitance C4 and the 4th coupling inductance L 4.
Wherein, the input of this LTE efficient radio frequency power amplifier is connected in transistorized grid by the 3rd matching capacitance C3 and the second capacitance C2 successively.One end of described the 3rd coupling inductance L 3 is connected between the input and the 3rd matching capacitance C3 of this LTE efficient radio frequency power amplifier, other end ground connection.One end of described the first resistance R 1 is connected between the 3rd matching capacitance C3 and the second capacitance C2, and the other end is successively by the 5th inductance L 5 and the 5th capacitor C 5 ground connection.One end of described the second choke induction L2 is connected between the second capacitance C2 and transistorized grid, the other end is connected with DC power supply VGS, described the 6th capacitor C 6, the 7th capacitor C 7 and the 8th capacitor C 8 one end parallel with one another are connected in VGS power end, the equal ground connection of the other end.
Described transistorized drain electrode is connected in the output of this LTE efficient radio frequency power amplifier successively by the first capacitance C1, resonant capacitance Cx, resonant inductance Lx and the 4th coupling inductance L 4.One end of described the first choke induction L1 is connected between the first capacitance C1 and transistorized drain electrode, the other end is connected with DC power supply VDS, described the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11 one end parallel with one another are connected in VDS power end, the equal ground connection of the other end.Described one end that turns to capacitor C d is connected between the first capacitance C1 and resonant capacitance Cx, other end ground connection.One end of described the 4th matching capacitance C4 is connected in resonant inductance Lx and the 4th mates between inductance L 4, other end ground connection.
Please refer to Fig. 1-Fig. 4, the operation principle of the LTE efficient radio frequency power amplifier that the utility model provides is as follows: biasing networks provides direct current biasing to transistorized grid and drain electrode respectively, makes transistor be operated in E class switching mode.Power amplifier is according to different bias points, there is multiple-working mode, for example category-A, AB class, category-B, C class, D class and E class etc., the transistorized bias voltage of E power-like amplifier is arranged near threshold voltage, E power-like amplifier, while making its work, be equivalent to a switch, so transistor of the present utility model is operated in E class switching mode.The first resistance R 1, the 5th inductance L 5 and the 5th capacitor C 5 in stabilizing network makes transistor when work in absolute stability state.The 3rd matching capacitance C3 in input network adopts conjugate impedance match mode to be connected with the 3rd coupling inductance L 3, and as shown in Figure 2, in Fig. 2, Zin represents to access input matching network equivalent input impedance before to its equivalent network, and Zs represents source impedance.In output network, the 4th matching capacitance C4 adopts optimal load matching mode to be connected with the 4th coupling inductance L 4, and as shown in Figure 3, in Fig. 3, Zopt is maximum power output optimum load impedance to its equivalent network.Zout is the conjugation of the output impedance before access output matching network.Resonant inductance Lx and resonant capacitance Cx are operated in resonance condition, the operating frequency that resonance frequency is power amplifier, and its effect is the noise signal beyond filtering fundamental signal.
The LTE efficient radio frequency power amplifier that the utility model provides, operating frequency range is 2.4GHz～2.6GHz, power gain and power added efficiency thereof (PAE) while being illustrated in figure 4 the utility model 2.5GHz.Its 1dB compression point PAE can reach 71%, and the highest PAE reaches 74%.The features such as the LTE efficient radio frequency power amplifier that the utility model provides has high operating efficiency, and circuit structure is simple, and cost is low.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (9)
1. a LTE efficient radio frequency power amplifier, comprise input network, stabilizing network, transistor, biasing networks and output network, wherein radiofrequency signal is sent to described transistor through described input network, after being amplified by described transistor, export through described output network again, described stabilizing network makes described transistor be operated in absolute stability state, described biasing networks provides direct current biasing to respectively described transistorized grid and drain electrode, it is characterized in that:
Described input network comprises the 3rd matching capacitance C3 and the 3rd coupling inductance L 3 that adopt conjugate impedance match mode to connect;
Described stabilizing network comprises the first resistance R 1, the 5th inductance L 5 and the 5th capacitor C 5 that are connected in series;
Described biasing networks comprises the first capacitance C1, the second capacitance C2, the first choke induction L1, the second choke induction L2, the 6th capacitor C 6, the 7th capacitor C 7, the 8th capacitor C 8, the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11;
Described output network comprises and turns to capacitor C d, resonant capacitance Cx, resonant inductance Lx, the 4th matching capacitance C4 and the 4th coupling inductance L 4.
2. LTE efficient radio frequency power amplifier according to claim 1, is characterized in that, the input of this LTE efficient radio frequency power amplifier is connected in transistorized grid by the 3rd matching capacitance C3 and the second capacitance C2 successively.
3. LTE efficient radio frequency power amplifier according to claim 2, is characterized in that, one end of described the 3rd coupling inductance L 3 is connected between the input and the 3rd matching capacitance C3 of this LTE efficient radio frequency power amplifier, other end ground connection.
4. LTE efficient radio frequency power amplifier according to claim 2, is characterized in that, one end of described the first resistance R 1 is connected between the 3rd matching capacitance C3 and the second capacitance C2, and the other end is successively by the 5th inductance L 5 and the 5th capacitor C 5 ground connection.
5. LTE efficient radio frequency power amplifier according to claim 2, it is characterized in that, one end of described the second choke induction L2 is connected between the second capacitance C2 and transistorized grid, the other end is connected with DC power supply VGS, described the 6th capacitor C 6, the 7th capacitor C 7 and the 8th capacitor C 8 one end parallel with one another are connected in VGS power end, the equal ground connection of the other end.
6. LTE efficient radio frequency power amplifier according to claim 1, it is characterized in that, described transistorized drain electrode is connected in the output of this LTE efficient radio frequency power amplifier successively by the first capacitance C1, resonant capacitance Cx, resonant inductance Lx and the 4th coupling inductance L 4.
7. LTE efficient radio frequency power amplifier according to claim 6, it is characterized in that, one end of described the first choke induction L1 is connected between the first capacitance C1 and transistorized drain electrode, the other end is connected with DC power supply VDS, described the 9th capacitor C 9, the tenth capacitor C the 10 and the 11 capacitor C 11 one end parallel with one another are connected in VDS power end, the equal ground connection of the other end.
8. LTE efficient radio frequency power amplifier according to claim 6, is characterized in that, described in turn to one end of capacitor C d to be connected between the first capacitance C1 and resonant capacitance Cx, other end ground connection.
9. LTE efficient radio frequency power amplifier according to claim 6, is characterized in that, one end of described the 4th matching capacitance C4 is connected in resonant inductance Lx and the 4th mates between inductance L 4, other end ground connection.
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| CN201420342998.9U CN203942502U (en) | 2014-06-25 | 2014-06-25 | A kind of LTE efficient radio frequency power amplifier |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106712727A (en) * | 2015-10-27 | 2017-05-24 | 湖南格兰德芯微电子有限公司 | Power synthesizer for radio frequency power amplifier |
| CN108494374A (en) * | 2018-04-09 | 2018-09-04 | 中国科学院微电子研究所 | A kind of RF power amplifier circuit |
| CN108667428A (en) * | 2018-08-14 | 2018-10-16 | 广东工业大学 | A kind of wideband voltage controlled oscillator |
| CN108923761A (en) * | 2018-07-06 | 2018-11-30 | 中国电子科技集团公司第十三研究所 | A kind of power amplifier that operating mode is changeable |
| CN112332785A (en) * | 2021-01-05 | 2021-02-05 | 泰新半导体(南京)有限公司 | Balanced and stable matching circuit of ultra wide band microwave amplifier |
| CN108123693B (en) * | 2017-12-20 | 2021-06-15 | 湖南智领通信科技有限公司 | Automatic control method for improving efficiency of radio frequency power amplifier |
| WO2023202309A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier circuit and radio frequency chip |
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2014
- 2014-06-25 CN CN201420342998.9U patent/CN203942502U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106712727A (en) * | 2015-10-27 | 2017-05-24 | 湖南格兰德芯微电子有限公司 | Power synthesizer for radio frequency power amplifier |
| CN108123693B (en) * | 2017-12-20 | 2021-06-15 | 湖南智领通信科技有限公司 | Automatic control method for improving efficiency of radio frequency power amplifier |
| CN108494374A (en) * | 2018-04-09 | 2018-09-04 | 中国科学院微电子研究所 | A kind of RF power amplifier circuit |
| CN108923761A (en) * | 2018-07-06 | 2018-11-30 | 中国电子科技集团公司第十三研究所 | A kind of power amplifier that operating mode is changeable |
| CN108667428A (en) * | 2018-08-14 | 2018-10-16 | 广东工业大学 | A kind of wideband voltage controlled oscillator |
| CN112332785A (en) * | 2021-01-05 | 2021-02-05 | 泰新半导体(南京)有限公司 | Balanced and stable matching circuit of ultra wide band microwave amplifier |
| CN112332785B (en) * | 2021-01-05 | 2022-01-18 | 泰新半导体(南京)有限公司 | Balanced and stable matching circuit of ultra wide band microwave amplifier |
| WO2023202309A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier circuit and radio frequency chip |
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Effective date of registration: 20181207 Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20190115 Address after: 215600 Building 101-102, 204-205, 208-209, Zhangjiagang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee after: WAYTHON INTELLIGENT TECHNOLOGIES SUZHOU Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |
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Effective date of registration: 20230425 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 215600 Building 101-102, 204-205, 208-209, Zhangjiagang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee before: WAYTHON INTELLIGENT TECHNOLOGIES SUZHOU Co.,Ltd. |
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