CN112332785B - Balanced and stable matching circuit of ultra wide band microwave amplifier - Google Patents
Balanced and stable matching circuit of ultra wide band microwave amplifier Download PDFInfo
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- CN112332785B CN112332785B CN202110006887.5A CN202110006887A CN112332785B CN 112332785 B CN112332785 B CN 112332785B CN 202110006887 A CN202110006887 A CN 202110006887A CN 112332785 B CN112332785 B CN 112332785B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B1/00—Shaft or like vertical or substantially vertical furnaces
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Abstract
The invention discloses a balanced and stable matching circuit of an ultra-wideband microwave amplifier, which comprises a GaN microwave power transistor A1 and a core amplifying device, wherein the GaN microwave power transistor A1 is used for providing the core amplifying device of the balanced and stable matching circuit; the RC filtering module is used for carrying out low-pass high-frequency clutter removal on the signal at the input end of the balanced and stable matching circuit, then carrying out waveform reduction on the signal, and outputting a low-pass frequency point signal; and the resonance stabilizing module comprises an LCR series resonance stabilizing circuit consisting of an inductor TL1, a capacitor C2 and a resistor R2, and is used for stabilizing the balanced and stable matching circuit, offsetting the parasitic impedance imaginary part of a partial circuit and reducing the quality factor Q value of the whole balanced and stable matching circuit. By utilizing the series resonance stabilizing circuit of the LCR, the stability of the circuit is improved, the parasitic imaginary part impedance of part of the circuit is counteracted, and the Q value of the whole circuit is reduced, so that the input standing wave and the gain in the ultra-wide frequency band are optimized and balanced, and the advantage of reducing the return loss of the input standing wave is achieved.
Description
Technical Field
The invention relates to the technical field of conductor microwave circuits, in particular to a balanced and stable matching circuit of an ultra-wideband microwave amplifier.
Background
The ultra-wideband and high-power microwave amplifier is used as an important component of a transmitter and determines key performances of wideband communication, radar and a test system. In addition to power, gain and efficiency performance parameters, the input standing wave return loss, gain flatness and stability of ultra-wideband and high-power microwave amplifiers determine the performance, operational stability and reliability index of a plurality of cascaded amplifiers.
In the prior art, in order to improve the stability of the amplifier, an RC parallel circuit is usually connected in series at the input end of the circuit to suppress the low-frequency gain and improve the input impedance. The method is effective for the narrow-band microwave amplifier with the relative bandwidth of less than 30%, but cannot meet the requirement of improving the stability of the ultra-wide-band microwave amplifier with the frequency range of 500 MHz-2700 MHz and nearly 2.5 octaves. In addition, connecting an RC parallel circuit in series has a limited effect in an ultra-wideband microwave amplifier for balancing gain and reducing input standing wave return loss. How to improve the stability of the amplifier, reduce the return loss of the input standing wave and optimize the gain flatness is a key technology for designing the ultra-wideband high-power microwave amplifier.
Therefore, the invention creates a method for improving the stability of the circuit by utilizing the series resonance stabilizing effect of the LCR, offsetting the parasitic impedance imaginary part of the circuit and reducing the Q value of the whole circuit; it is necessary to optimize and equalize the input standing wave and gain of a certain section of frequency in the ultra-wideband, reduce the return loss of the input standing wave, and reduce the unevenness of the gain, so as to solve the problems in the prior art.
Disclosure of Invention
The invention aims to provide a balanced and stable matching circuit of an ultra-wideband microwave amplifier, which improves the stability of the amplifier by utilizing a series resonance stable circuit of LCR, cancels a part of parasitic impedance imaginary parts of circuits, and reduces the Q value of the whole circuit, so that the balanced and balanced ultra-wideband microwave amplifier optimizes and balances input standing waves and gains of a certain section of frequency, reduces return loss of the input standing waves, reduces unevenness of the gains, and solves the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: a balanced and stable matching circuit of an ultra-wideband microwave amplifier comprises a GaN microwave power transistor A1, wherein the GaN microwave power transistor A1 is used for providing a core amplifying device of the balanced and stable matching circuit;
the RC filter module is used for carrying out low-pass high-frequency clutter removal on the signal at the input end of the balanced and stable matching circuit, then carrying out waveform reduction and outputting a low-pass frequency point signal;
the resonance stabilizing module comprises an LCR series resonance stabilizing circuit consisting of an inductor TL1, a capacitor C2 and a resistor R2, and is used for stabilizing the balanced and stable matching circuit, offsetting a part of circuit parasitic impedance imaginary part and reducing the quality factor Q value of the whole balanced and stable matching circuit; wherein the content of the first and second substances,
the grid of GaN microwave power transistor A1 connects the series behind the input matching circuit RC filter module and inserts balanced stable matching circuit's input, LCR series resonance stable circuit connects in parallel between RC filter module and the input matching circuit, inductance TL 1's first end is connected the RC filter module, second end series capacitance C2 back connecting resistance R2, resistance R2 keeps away from the one end ground connection of being connected with electric capacity C2, GaN microwave power transistor A1's source ground connection, the drain electrode inserts behind the series output matching circuit balanced stable matching circuit's output, GaN microwave power transistor A1's drain electrode with connect VDC behind the parallelly connected resistance R0 between the output matching circuit.
As an improvement of the balanced and stable matching circuit of the ultra-wideband microwave amplifier, the inductor TL1 is a microstrip line equivalent inductor, the capacitor C2 is a lumped high-Q-value capacitor, and the resistor R2 is a high-power lumped high-frequency resistor.
As an improvement of the balanced and stable matching circuit of the ultra-wideband microwave amplifier in the present invention, the RC filter module includes an RC filter parallel circuit composed of a capacitor C1 and a resistor R1, wherein one end of the capacitor C1 after being connected in parallel with the resistor R1 is connected to an input end of the balanced and stable matching circuit, and the other end is connected to the input matching circuit.
As an improvement of the balanced and stable matching circuit of the ultra-wideband microwave amplifier, the microstrip line equivalent inductor TL1 is applied to a circuit board which is 0.508mm thick and is an RO4350B type PCB, wherein the microstrip line width of the microstrip line equivalent inductor TL1 is 0.5mm to 0.52mm, the length is 28.00mm to 28.50mm, the capacitance C2 has a capacitance value of 5pF to 10pF, and the resistance value of the resistor R2 is 50 Ω to 150 Ω.
As an improvement of the balanced and stable matching circuit of the ultra-wideband microwave amplifier, the capacitance value of the capacitor C1 is 3.0 pF-4.0 pF, and the resistance value of the resistor R1 is 20 omega-30 omega.
Compared with the prior art, the invention has the following beneficial effects:
by utilizing the series resonance stabilizing circuit of the LCR, the stability of the circuit is improved, the parasitic impedance imaginary part of a part of the circuit is offset, and the Q value of the whole circuit is reduced.
Drawings
FIG. 1 is a schematic diagram of an embodiment of an integrated balanced and stable matching circuit;
FIG. 2 is a schematic circuit diagram of an overall balanced and stable matching circuit in an application scenario of 500MHz to 2700MHz in an operating frequency band according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a conventional stabilization circuit in the prior art;
FIG. 4 is a schematic diagram illustrating comparison of stability between a balanced and stable matching circuit and a conventional stable circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a comparison of return loss of input standing waves between a balanced and stable matching circuit and a conventional stabilizing circuit according to an embodiment of the present invention;
FIG. 6 is a comparison of gain flatness of the balun matching circuit and the conventional stabilizing circuit in an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
As an embodiment of the present invention, an ultra-wideband microwave amplifier balanced and stable matching circuit, as shown in fig. 1, includes a GaN microwave power transistor a1, where the GaN microwave power transistor a1 is used to provide a core amplifier device of the balanced and stable matching circuit;
the RC filter module is used for carrying out low-pass high-frequency clutter removal on a signal at the input end of the balanced and stable matching circuit, then carrying out waveform reduction and outputting a low-pass frequency point signal, wherein the RC filter module comprises an RC filter parallel circuit consisting of a capacitor C1 and a resistor R1, one end of the capacitor C1 is connected with the input end of the balanced and stable matching circuit after being connected with the resistor R1 in parallel, and the other end of the capacitor C1 is connected with the input matching circuit;
the resonance stabilizing module comprises an LCR series resonance stabilizing circuit consisting of an inductor TL1, a capacitor C2 and a resistor R2, and is used for stabilizing the balanced and stable matching circuit, offsetting the imaginary part of the parasitic impedance of part of the circuit and reducing the quality factor Q value of the whole balanced and stable matching circuit; wherein the content of the first and second substances,
the grid electrode of the GaN microwave power transistor A1 is connected with an input matching circuit and then connected with an input end of a balanced and stable matching circuit in series after being connected with an RC filter module, the LCR series resonance stable circuit is connected in parallel between the RC filter module and the input matching circuit, the RC filter module is connected with the first end of an inductor TL1, the resistor R2 is connected with the second end of the inductor C2 in series, one end, far away from the capacitor C2, of the resistor R2 is grounded, the source electrode of the GaN microwave power transistor A1 is grounded, the drain electrode of the GaN microwave power transistor A1 is connected with an output end of the balanced and stable matching circuit in series after being connected with the output matching circuit in series, and the VDC is connected between the drain electrode of the GaN microwave power transistor A1 and the output matching circuit after being connected with the resistor R0 in parallel.
In an embodiment of the invention, the inductor TL1 is a microstrip line equivalent inductor, the microstrip line equivalent inductor TL1 is applied to a circuit board with a thickness of 0.508mm and an RO4350B type PCB, a microstrip line width of the microstrip line equivalent inductor TL1 is preferably 0.51mm, a length of the microstrip line equivalent inductor TL1 is preferably 28.31mm, the capacitor C2 is a lumped high-Q capacitor, a capacitance of the capacitor C2 is preferably 10pF, the resistor R2 is a high-power high-frequency lumped resistor, and a resistance of the resistor R2 is preferably 100 Ω.
In one embodiment of the present invention, the capacitance of the capacitor C1 is preferably 3.9pF, and the resistance of the resistor R1 is preferably 25 Ω.
As another embodiment of the present invention, the bandwidth and length of the microstrip line equivalent inductor TL1, the capacitance of the capacitor C2, and the resistance of the resistor R2 can be adjusted according to different application frequencies and circuit requirements.
In an embodiment of the present invention, as shown in fig. 2, a gate of the GaN microwave power transistor a1 is connected to the input matching circuit and then connected to the input end of the balanced and stable matching circuit, an LCR series resonance and stable circuit is connected in parallel between the RC filtering module and the input matching circuit, a first end of the microstrip line equivalent inductor Ls is connected to the RC filtering module, a second end of the microstrip line equivalent inductor Ls is connected to the parasitic resistor Rs in series, a end of the parasitic resistor Rs far away from the microstrip line equivalent inductor Ls is connected to the parasitic resistor R2 and then connected to the parasitic resistor R2, a end of the parasitic resistor R2 far away from the capacitor C2 is grounded, a source of the GaN microwave power transistor a1 is grounded, a drain of the GaN microwave power transistor a1 is connected to the output matching circuit in series and then connected to the output end of the balanced and stable matching circuit, a resistor R0 is connected in parallel between the drain of the GaN microwave power transistor a1 and the output matching circuit and then connected to VDC,
the first end of the microstrip line equivalent inductor Ls is connected with the first end of the parasitic capacitor Cs, the second end of the parasitic capacitor Cs is connected with the first end of the capacitor C2, at the moment, the inductance value of the microstrip line equivalent inductor TL1 is Ls, the parasitic resistor is Rs, the parasitic capacitor Cs is 500 MHz-2700 MHz, the frequency is low, the parasitic resistor Rs and the parasitic capacitor Cs can be ignored, and therefore the microstrip line equivalent inductor can be equivalently an LCR series circuit, meanwhile, if the frequency is more than 4000MHz, the invention is also applicable, and a user only needs to consider the parasitic resistor Rs and the parasitic capacitor Cs simultaneously during design.
In an embodiment of the present invention, as shown in fig. 3, a principle of a conventional stabilizing circuit in the prior art is illustrated, wherein an LCR series circuit is not connected in parallel between an input matching circuit of a GaN microwave power transistor a1 and an RC filter module, and the stability of the LCR series circuit is compared with the stability of the circuit of the present invention, as shown in fig. 4, when the operating frequency band of the amplifier circuit is 810MHz, the stability coefficient Mu1 is 0.538, and when the operating frequency band of the amplifier circuit is 1460MHz to 2510MHz, the stability coefficient Mu1 is less than 1, so it is found that the amplifier of the conventional stabilizing circuit is 810MHz in the operating frequency band and 1460MHz to 2510MHz in the operating frequency band is unstable, and is easy to generate self-excited oscillation, and the stability coefficient Mu1 of the circuit of the present invention is greater than or equal to 1 in 500MHz to 2700MHz in the operating frequency band, thus it is found that the amplifier of the present invention can stably operate.
In one embodiment of the present invention, as shown in fig. 5-6, the return loss of the input standing wave of the balun circuit of the present invention is reduced by 3dB compared to the conventional balun circuit, and the gain flatness of the balun circuit of the present invention is reduced by 4.5dB compared to the conventional balun circuit.
In an embodiment of the invention, the stability of the amplifier is improved by utilizing the series resonance stabilizing circuit of the LCR, the parasitic impedance imaginary part of a part of the circuit is offset, and the Q value of the whole circuit is reduced.
While there have been shown and described the fundamental principles and essential features of the invention and advantages thereof, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof; the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (1)
1. A balanced and stable matching circuit of an ultra-wideband microwave amplifier is characterized by comprising:
a GaN microwave power transistor A1, the GaN microwave power transistor A1 being used to provide a core amplifier device of the balanced and stable matching circuit;
the RC filter module is used for carrying out waveform reduction on a signal at the input end of the balanced and stable matching circuit after low-pass high-frequency clutter removal processing and outputting a low-pass frequency point signal, and comprises an RC filter parallel circuit consisting of a capacitor C1 and a resistor R1, wherein one end of the capacitor C1, which is connected with the resistor R1 in parallel, is connected with the input end of the balanced and stable matching circuit, the other end of the capacitor C1 is connected with the input matching circuit, the capacitance value of the capacitor C1 is 3.0 pF-4.0 pF, and the resistance value of the resistor R1 is 20 omega-30 omega;
a resonance stabilizing module, which comprises an LCR series resonance stabilizing circuit composed of an inductor TL1, a capacitor C2 and a resistor R2, and is used for stabilizing the balanced and stable matching circuit and offsetting partial circuit parasitic impedance imaginary parts, and reducing the quality factor Q value of the whole balanced and stable matching circuit, wherein the inductor TL1 is a microstrip line equivalent inductor, the capacitor C2 is a lumped high Q value capacitor, the resistor R2 is a high-power lumped high-frequency resistor, the microstrip line equivalent inductor TL1 is applied to a circuit board which is 0.508mm thick and is an RO4350B type PCB, wherein the microstrip line width of the microstrip line equivalent inductor TL1 is 0.5 mm-0.52 mm, the length is 28.00 mm-28.50 mm, the capacitance value of the capacitor C2 is 5 pF-10 pF, and the resistance value of the resistor R2 is 50 omega-150 omega, wherein the grid of the GaN microwave power transistor A1 is connected with the input matching circuit and then connected with the RC filter module in series and the input end of the balanced and stable matching circuit, the LCR series resonance stabilizing circuit is connected between an RC filtering module and an input matching circuit in parallel, the first end of the inductor TL1 is connected with the RC filtering module, the second end of the inductor TL1 is connected with a resistor R2 behind a series capacitor C2, one end of the resistor R2 far away from the capacitor C2 is grounded, the source electrode of the GaN microwave power transistor A1 is grounded, the drain electrode of the GaN microwave power transistor A1 is connected with the output end of the balanced and stable matching circuit after being connected with the output matching circuit in series, and the drain electrode of the GaN microwave power transistor A1 is connected with the VDC after being connected with a resistor R0 between the output matching circuit in parallel.
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| CN202110006887.5A CN112332785B (en) | 2021-01-05 | 2021-01-05 | Balanced and stable matching circuit of ultra wide band microwave amplifier |
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| CN202110006887.5A CN112332785B (en) | 2021-01-05 | 2021-01-05 | Balanced and stable matching circuit of ultra wide band microwave amplifier |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273540A (en) * | 2005-09-26 | 2008-09-24 | 格罗纳乌有限公司 | Multistage resonant amplifier system and method |
| CN203942502U (en) * | 2014-06-25 | 2014-11-12 | 中国科学院微电子研究所 | A kind of LTE efficient radio frequency power amplifier |
| CN107786177A (en) * | 2017-11-03 | 2018-03-09 | 浙江嘉科电子有限公司 | A kind of low-noise amplifier of C-band |
| CN109981063A (en) * | 2019-05-07 | 2019-07-05 | 成都理工大学 | A kind of five rank F power-like amplifier of high efficiency |
| CN111181506A (en) * | 2020-01-20 | 2020-05-19 | 电子科技大学 | Broadband efficient J-type power amplifier with novel output matching method |
-
2021
- 2021-01-05 CN CN202110006887.5A patent/CN112332785B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273540A (en) * | 2005-09-26 | 2008-09-24 | 格罗纳乌有限公司 | Multistage resonant amplifier system and method |
| CN203942502U (en) * | 2014-06-25 | 2014-11-12 | 中国科学院微电子研究所 | A kind of LTE efficient radio frequency power amplifier |
| CN107786177A (en) * | 2017-11-03 | 2018-03-09 | 浙江嘉科电子有限公司 | A kind of low-noise amplifier of C-band |
| CN109981063A (en) * | 2019-05-07 | 2019-07-05 | 成都理工大学 | A kind of five rank F power-like amplifier of high efficiency |
| CN111181506A (en) * | 2020-01-20 | 2020-05-19 | 电子科技大学 | Broadband efficient J-type power amplifier with novel output matching method |
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