CN203933548U - Adopt micro-band monolithic integrated power amplifier chip of mixer along separate routes on sheet - Google Patents
Adopt micro-band monolithic integrated power amplifier chip of mixer along separate routes on sheet Download PDFInfo
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- CN203933548U CN203933548U CN201420260064.0U CN201420260064U CN203933548U CN 203933548 U CN203933548 U CN 203933548U CN 201420260064 U CN201420260064 U CN 201420260064U CN 203933548 U CN203933548 U CN 203933548U
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- 230000005540 biological transmission Effects 0.000 claims description 20
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- 238000002955 isolation Methods 0.000 claims description 3
- 230000003044 adaptive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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Abstract
A kind of monolithic integrated power amplifier chip, comprises on microstrip power divider on sheet, sheet micro-with the mixer power amplifier identical with two-way; Microstrip power divider He road input port on the rf inputs brace of this chip, on sheet, first and second shunt output port of microstrip power divider connects respectively the input of two-way power amplifier; The output of two-way power amplifier is micro-first and second input port along separate routes with mixer on brace respectively, micro-radio frequency output port that connects this chip with mixer He road output port on sheet, be on sheet on microstrip power divider and sheet micro-structure with mixer be identical Wilkinson structure.In described two-way power amplifier, each road power amplifier is to be all made up of a power amplifier monomer, or is followed in series to form by multiple independently power amplifier monomers.Also comprise active bias circuit, the quantity of active bias circuit is identical with the quantity of power amplifier monomer, and each active bias circuit forms active biased network.
Description
Technical field
The technical program belongs to radio-frequency power amplifier, specifically a kind of monolithic integrated power amplifier chip that adopts micro-band shunt mixer on sheet.
Background technology
In modern wireless communication systems, radio-frequency power amplifier is the critical component of realizing radiofrequency signal wireless transmission.Now, telecom operators have released a lot of different wireless communication systems, and the frequency of different wireless communication systems transmission and the pattern of work require different.Therefore, high power monolithic integrated RF power amplifier chip arises at the historic moment, and taking Chinese Big Dipper generation 5W power amplifier chip as example, this chip internal adopts two-way radio-frequency power amplifier to divide device ﹑ mixer synthetic by micro-band merit on sheet.
Existing technology is to adopt mixer part along separate routes, on sheet or outside sheet, two-way radio-frequency power amplifier is synthesized, and existing technical scheme please refer to Fig. 1 a and Fig. 1 b.On available technology adopting sheet, mixer part carries out synthetic scheme to two-way radio-frequency power amplifier along separate routes, solve the single chip integrated demand of power amplifier, but because volume and the radio frequency loss of shunt mixer part are larger, thereby cause the power output Jian little ﹑ deterioration of efficiency of this power amplifier chip, and the volume of whole chip is larger.
Prior art intermediate power amplifier biasing circuit is generally according to traditional bipolar transistor biasing circuit, and two resistance series connection dividing potential drop compositions please refer to Fig. 1 c.In the time that input power increases, the voltage V of power tube grid source
gSvoltage signal increases, and due to the P-N junction diode clamping action of grid source, makes large forward voltage limited, and especially larger this clamping action of signal is more obvious, the average voltage level V after the shaping of P-N junction diode
gSwill reduce Δ V
gS, bias point will move to L by S point
1point, the slope that this slope will be ordered lower than S, so corresponding mutual conductance reduces, causes gain to decline, phase distortion.General power amplifier is often operated in non-peak power output state, and therefore the average efficiency of power amplifier can be lower.
Summary of the invention
In order to solve the problems such as the prior art power amplifier chip power output is little, efficiency is poor, on the basis of the technical program shunt mixer part power amplifier chip on existing employing sheet, the shunt mixer part of chip internal is replaced with distributed substrate Wei band Gong Fen Qi ﹑ mixer in sheet, not only reduce chip volume but also reduced cost, improved power output and the efficiency of chip simultaneously.And adopt adaptive bias circuit can effectively improve linear power output and average efficiency by chip internal.
The technical program is specific as follows:
Adopt micro-band monolithic integrated power amplifier chip for mixer along separate routes on sheet, comprise on microstrip power divider on sheet, sheet micro-with the mixer power amplifier identical with two-way; Microstrip power divider He road input port on the rf inputs brace of this chip, on sheet, first and second shunt output port of microstrip power divider connects respectively the input of two-way power amplifier; The output of two-way power amplifier is micro-first and second input port along separate routes with mixer on brace respectively, micro-radio frequency output port that connects this chip with mixer He road output port on sheet; On sheet, on microstrip power divider and sheet, micro-structure with mixer is identical Wilkinson structure; The road port that closes of Wilkinson structure is microstrip power divider He road input port on sheet, and two points of road ports of Wilkinson structure are first and second shunt output port of microstrip power divider on sheet; The road port that closes of Wilkinson structure is micro-band mixer He road output port on sheet, and two points of road ports of Wilkinson structure are micro-first and second shunt input port with mixer on sheet; In described two-way power amplifier, each road power amplifier is to be all made up of a power amplifier monomer, or be followed in series to form by multiple independently power amplifier monomers, it is characterized in that also comprising active bias circuit, the quantity of active bias circuit is identical with the quantity of power amplifier monomer, and each active bias circuit forms active biased network; Comprise following device for arbitrary active bias circuit:
Three transistor M1, M2 and M3; Wherein, for transistor M1 and M2, their grids are separately connected with drain electrode;
Capacitor C 1;
Resistance R 1, R2 and R_bias;
The drain electrode of described transistor M1 connects reference voltage Vref by resistance R 1; The grid of transistor M1 is by capacitor C 1 ground connection;
The drain electrode of described transistor M2 connects the source electrode of transistor M1; The source ground of transistor M2;
The drain electrode of described transistor M3 connects power supply VCC; The grid of transistor M3 is by capacitor C 1 ground connection; The source electrode of transistor M3 is by resistance R 2 ground connection; One end of described resistance R _ bias connects the source electrode of transistor M3;
For described power amplifier monomer, the signal input part of power amplifier monomer connects the other end of R_bias, and meanwhile, the input signal of power amplifier monomer passes to the signal input part of power amplifier monomer by capacitance C2.
The principle of active bias circuit structure is, by active bias circuit structure compensation voltage Δ V
gSwith offset current I
com, keep large-signal consistent with the mutual conductance of small-signal.Be connected to power tube grid by divider resistance R2 and every straight resistance R _ bias, that play voltage compensating action is mainly grid source diode and the filter capacitor C1 of M3 pipe, in the time that input signal power increases, due to the rectified action of power tube grid source diode, the mean direct voltage V between power tube grid source
gSreduce.
In like manner along with input power increases, the signal power that enters M3 pipe by R2 also increases, due to the rectified action of M3 pipe grid source diode, the grid source mean direct voltage of M3 also reduces, but the direct voltage that VP is ordered remains unchanged substantially, therefore the effect that has also just played DC compensation, vice versa.M1 is two grids and the MOS diode that drain electrode is connected with M3, is connected with reference voltage Vref by resistance R 1, and Main Function is just to provide a more stable reference voltage.Therefore, adopt adaptive bias circuit can effectively improve maximum linear power output and average efficiency by chip internal.
Described Wilkinson structure comprises two identical transmission line section, and each transmission line section is 1/4 wavelength transmission line segment, and the characteristic impedance of this Wilkinson structure is Z
0, the impedance of each transmission line section is 2
1/2z
0; And the road port that closes of two transmission line section connects, and between point road port of two transmission line section, is connected with isolation resistance.
On existing employing sheet along separate routes on the basis of mixer part power amplifier chip, the shunt mixer part of chip internal is replaced with distributed substrate Wei band Gong Fen Qi ﹑ mixer in sheet, not only reduce chip volume but also reduced cost, improved power output and the efficiency of chip simultaneously.In sheet, distributing declines is with merit to divide device ﹑ mixer all to adopt Wilkinson power divider structure, and directly design is on the substrate of power amplifier chip.
Technique effect: the technical program has not only reduced chip volume but also reduced cost has improved power output and the efficiency of chip simultaneously, and adopts specific adaptive bias circuit can effectively improve linear power output and average efficiency by chip internal.This chip also has following advantage in addition:
(1) what this chip adopted is the power amplifier chip of 5V single power supply;
(2) power output is adjustable, 2～5W, and maximum power can reach 5W;
(3) match circuit in this chip strap, has reduced the use of external devices and the difficulty of commissioning;
(4) this chip adopts open loop protection circuit, has improved the reliability of chip.
Brief description of the drawings
Fig. 1 a is in existing technical scheme, adopts shunt mixer part power amplifier chip schematic diagram on sheet;
Fig. 1 b is in existing technical scheme, adopts the synthetic schematic diagram of the outer mixer part along separate routes of sheet power amplifier;
Fig. 1 c is in existing technical scheme, electric resistance partial pressure type bias circuit construction schematic diagram;
Fig. 2 is the technical program schematic diagram;
Fig. 3 is the technical program Wilkinson structural representation;
Fig. 4 is the adaptive bias circuit construction schematic diagram of the technical program.
Embodiment
The technical program is further illustrated as follows below in conjunction with accompanying drawing and embodiment:
As Fig. 2, a kind of monolithic integrated power amplifier chip that adopts micro-band shunt mixer on sheet, comprises on microstrip power divider on sheet, sheet micro-with the mixer power amplifier identical with two-way; Microstrip power divider He road input port on the rf inputs brace of this chip, on sheet, first and second shunt output port of microstrip power divider connects respectively the input of two-way power amplifier; The output of two-way power amplifier is micro-first and second input port along separate routes with mixer on brace respectively, micro-radio frequency output port that connects this chip with mixer He road output port on sheet.As Fig. 3, on sheet, on microstrip power divider and sheet, micro-structure with mixer is identical Wilkinson structure, and this Wilkinson structure comprises two identical transmission line section, and each transmission line section is 1/4 wavelength transmission line segment, and the characteristic impedance of this Wilkinson structure is Z
0, the impedance of each transmission line section is 2
1/2z
0; And the road port that closes of two transmission line section connects, and between point road port of two transmission line section, is connected with isolation resistance; The road port that closes of Wilkinson structure is microstrip power divider He road input port on sheet, and two points of road ports of Wilkinson structure are first and second shunt output port of microstrip power divider on sheet; The road port that closes of Wilkinson structure is micro-band mixer He road output port on sheet, and two points of road ports of Wilkinson structure are micro-first and second shunt input port with mixer on sheet.
In described two-way power amplifier, each road power amplifier is to be all made up of a power amplifier monomer, or be followed in series to form by multiple independently power amplifier monomers, it is characterized in that also comprising active bias circuit, the quantity of active bias circuit is identical with the quantity of power amplifier monomer, and each active bias circuit forms active biased network; As Fig. 4, for arbitrary active bias circuit, its structure is as follows:
Three transistor M1, M2 and M3; Wherein, for transistor M1 and M2, their grids are separately connected with drain electrode; Capacitor C 1; Resistance R 1, R2 and R_bias;
The drain electrode of described transistor M1 connects reference voltage Vref by resistance R 1; The grid of transistor M1 is by capacitor C 1 ground connection; The drain electrode of described transistor M2 connects the source electrode of transistor M1; The source ground of transistor M2; The drain electrode of described transistor M3 connects power supply VCC; The grid of transistor M3 is by capacitor C 1 ground connection; The source electrode of transistor M3 is by resistance R 2 ground connection; One end of described resistance R _ bias connects the source electrode of transistor M3; For described power amplifier monomer, the signal input part of power amplifier monomer connects the other end of R_bias, and meanwhile, the input signal of power amplifier monomer passes to the signal input part of power amplifier monomer by capacitance C2.
On the basis of the present invention's shunt mixer part power amplifier chip on existing employing sheet, adaptive bias circuit construction is replaced and adopted to the shunt mixer part of chip internal with distributed substrate Wei band Gong Fen Qi ﹑ mixer in sheet.Radiofrequency signal is inputted from chip input port, first pass through Wilkinson microstrip power divider, signal constant amplitude homophase is divided into two-way, then be input to respectively chip internal two-way power amplifier, in the time that constantly changing, signal power passes through adaptive bias circuit structure, the DC point of appropriate change power amplifier, can effectively improve maximum linear power output and average efficiency, finally pass through the micro-band synthesizer of Wilkinson by the signal after amplifying at power amplifier output, the power signal of two-way constant amplitude homophase is united two into one as the final output of chip.This invention has not only reduced chip volume but also reduced cost, has improved maximum linear power output and the average efficiency of chip simultaneously.In sheet, distributing declines is with merit to divide device ﹑ mixer all to adopt Wilkinson power divider structure, and directly design is on the substrate of power amplifier chip.
Claims (2)
1. adopt micro-band monolithic integrated power amplifier chip for mixer along separate routes on sheet, comprise on microstrip power divider on sheet, sheet micro-with the mixer power amplifier identical with two-way; Microstrip power divider He road input port on the rf inputs brace of this chip, on sheet, first and second shunt output port of microstrip power divider connects respectively the input of two-way power amplifier; The output of two-way power amplifier is micro-first and second input port along separate routes with mixer on brace respectively, micro-radio frequency output port that connects this chip with mixer He road output port on sheet; On sheet, on microstrip power divider and sheet, micro-structure with mixer is identical Wilkinson structure; The road port that closes of Wilkinson structure is microstrip power divider He road input port on sheet, and two points of road ports of Wilkinson structure are first and second shunt output port of microstrip power divider on sheet; The road port that closes of Wilkinson structure is micro-band mixer He road output port on sheet, and two points of road ports of Wilkinson structure are micro-first and second shunt input port with mixer on sheet; In described two-way power amplifier, each road power amplifier is to be all made up of a power amplifier monomer, or be followed in series to form by multiple independently power amplifier monomers, it is characterized in that also comprising active bias circuit, the quantity of active bias circuit is identical with the quantity of power amplifier monomer, and each active bias circuit forms active biased network; Comprise following device for arbitrary active bias circuit:
Three transistor M1, M2 and M3; Wherein, for transistor M1 and M2, their grids are separately connected with drain electrode;
Capacitor C 1;
Resistance R 1, R2 and R_bias;
The drain electrode of described transistor M1 connects reference voltage Vref by resistance R 1; The grid of transistor M1 is by capacitor C 1 ground connection;
The drain electrode of described transistor M2 connects the source electrode of transistor M1; The source ground of transistor M2;
The drain electrode of described transistor M3 connects power supply VCC; The grid of transistor M3 is by capacitor C 1 ground connection; The source electrode of transistor M3 is by resistance R 2 ground connection; One end of described resistance R _ bias connects the source electrode of transistor M3;
For described power amplifier monomer, the signal input part of power amplifier monomer connects the other end of R_bias, and meanwhile, the input signal of power amplifier monomer passes to the signal input part of power amplifier monomer by capacitance C2.
2. micro-band monolithic integrated power amplifier chip of mixer along separate routes on employing sheet according to claim 1, it is characterized in that described Wilkinson structure comprises two identical transmission line section, each transmission line section is 1/4 wavelength transmission line segment, and the characteristic impedance of this Wilkinson structure is Z
0, the impedance of each transmission line section is 2
1/2z
0; And the road port that closes of two transmission line section connects, and between point road port of two transmission line section, is connected with isolation resistance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420260064.0U CN203933548U (en) | 2014-05-20 | 2014-05-20 | Adopt micro-band monolithic integrated power amplifier chip of mixer along separate routes on sheet |
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|---|---|---|---|
| CN201420260064.0U CN203933548U (en) | 2014-05-20 | 2014-05-20 | Adopt micro-band monolithic integrated power amplifier chip of mixer along separate routes on sheet |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162335A (en) * | 2015-05-25 | 2015-12-16 | 华南理工大学 | High-efficiency rectifier circuit covering wide input power range |
| CN109560780A (en) * | 2019-01-31 | 2019-04-02 | 合肥立芯通信技术有限公司 | A kind of 5G base station power amplifier |
| CN111092623A (en) * | 2019-12-24 | 2020-05-01 | 广电计量检测（西安）有限公司 | Large dynamic range electromagnetic signal long-distance transmission device |
| CN117559925A (en) * | 2024-01-12 | 2024-02-13 | 电子科技大学 | Multimode high-efficiency power amplifier |
-
2014
- 2014-05-20 CN CN201420260064.0U patent/CN203933548U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162335A (en) * | 2015-05-25 | 2015-12-16 | 华南理工大学 | High-efficiency rectifier circuit covering wide input power range |
| CN109560780A (en) * | 2019-01-31 | 2019-04-02 | 合肥立芯通信技术有限公司 | A kind of 5G base station power amplifier |
| CN109560780B (en) * | 2019-01-31 | 2023-09-19 | 合肥盛芯世纪信息科技有限公司 | 5G base station power amplifier |
| CN111092623A (en) * | 2019-12-24 | 2020-05-01 | 广电计量检测（西安）有限公司 | Large dynamic range electromagnetic signal long-distance transmission device |
| CN111092623B (en) * | 2019-12-24 | 2021-06-29 | 广电计量检测（西安）有限公司 | Large dynamic range electromagnetic signal long-distance transmission device |
| CN117559925A (en) * | 2024-01-12 | 2024-02-13 | 电子科技大学 | Multimode high-efficiency power amplifier |
| CN117559925B (en) * | 2024-01-12 | 2024-03-29 | 电子科技大学 | Multimode high-efficiency power amplifier |
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Granted publication date: 20141105 |