CN203895468U - PID effect resistance solar energy cell - Google Patents
PID effect resistance solar energy cell Download PDFInfo
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- CN203895468U CN203895468U CN201420200809.4U CN201420200809U CN203895468U CN 203895468 U CN203895468 U CN 203895468U CN 201420200809 U CN201420200809 U CN 201420200809U CN 203895468 U CN203895468 U CN 203895468U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model belongs to the manufacture technology of a photovoltaic solar energy cell, relating to a PID (Potential Induced Degradation) effect resistance solar energy cell. The cell comprises a crystalline silica substrate, a texturing surface, a diffusion emitter junction and three layers of passivation antireflection films successively deposited on the crystalline silica substrate, wherein a first layer is SiNx with a refractive index of 2.2-2.4 and a thickness of 5-10 nm, a second layer is SiNx with a refractive index of 1.9-2.1 and a thickness of 50-80 nm, and a third layer is aluminum oxide with a refractive index of 1.8-1.9 and a thickness of 2-10 nm. The PID effect resistance solar energy cell has good PID effect resistance performance, can perform production based on traditional silicon nitride plated film equipment and has low cost.
Description
Technical field
The utility model relates to a kind of solar battery sheet, especially a kind of solar battery sheet of anti-PID effect.
Background technology
Crystal silicon solar energy battery does not in use discharge and launches any harmful substance; There is no moving component, noiseless, lightweight, volume is little, have modular characteristics, dispersibles on the spot and to arrange, the construction period is short, long working life 20-25, easy maintenance, the advantage such as reliable, is a kind of very good renewable clear energy sources.In actual applications due to single crystal silicon solar assembly output voltage and power on the low side, can not meet life or need of production, so need to be by a plurality of assemblies serial connection.Under the condition of housing ground connection, a plurality of assembly serial connections will cause housing and cell piece surface to have high reverse bias.
And in long-term use, damp and hot environment is inevitable, these extreme conditions combine and have just formed PID (Potential Induced Degradation, electromotive force induction decay) test condition is the bias voltage 1000V of cell piece to housing, 85 ℃ and 85% relative humidity, the testing time is generally 100h.PID effect mainly refers at high bias voltage, high temperature, and under the condition of high humility, the metal ion in assembly surface encapsulating material soda lime glass moves to cell piece surface, on cell piece surface, forms local gathering, a kind of effect that cell piece was lost efficacy.People mainly think, by changing assembly earthing mode, to change cell piece component package material at present, develop the technology such as cell piece of anti-PID and eliminate PID effect.
Utility model content
The utility model is a kind of solar battery sheet of anti-PID effect, and the purpose of this utility model is the anti-PID problem of solar battery sheet.
The utility model is a kind of solar battery sheet of anti-PID effect, comprise silicon chip, matte, diffusion emitter junction and electrode, on diffusion emitter junction surface, have three layers of passivated reflection reducing to penetrate film, ground floor is SiNx, refractive index is 2.2-2.4, thickness is 5-10nm, and the second layer is SiNx, and refractive index is 1.9-2.1, thickness is 50-80nm, the 3rd layer is aluminium oxide, and refractive index is 1.8-1.9, and thickness is 2-10nm.
In an embodiment, described SiNx is the film that adopts tubular type or board-like plasma chemical vapor deposition process to prepare therein.
In an embodiment, described aluminium oxide is the aluminium oxide that plasma enhanced chemical vapor deposition method or atomic layer deposition method prepare therein.
In an embodiment, described silicon wafer-based is polysilicon chip therein.
In an embodiment, described ground floor is SiNx therein, and refractive index is 2.4, and thickness is 10nm,
The described second layer is SiNx, and refractive index is 2.05, and thickness is 70nm, and described the 3rd layer is aluminium oxide, and refractive index is 1.85, and thickness is 5nm.
Cell piece of the present utility model is compared with conventional crystal silicon cell, has increased the anti-PID effect layer being deposited on photic zone, and by the Proper Match of each thin-film refractive index and thickness, has effectively eliminated PID effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of anti-PID film of the present utility model.
1. ground floor SiNx2. second layer SiNx3. aluminium oxide 4. silicon chips
Embodiment
Comparative example
A solar battery sheet for anti-PID effect, comprises silicon chip, matte, diffusion emitter junction and electrode, on emitter junction surface, has one deck passivated reflection reducing to penetrate film SiNx, and the refractive index of described antireflective coating SiNx is 2.0-2.1, and thickness is 80-90nm.
Embodiment 1
Preparation method's following steps of the present utility model:
Step 1, preheating, crystalline silicon substrate enters reaction cavity and first carries out heated at constant temperature, makes temperature reach the reaction temperature 400-500 ℃ of setting;
Step 2, ground floor thin film deposition, passes into reacting gas NH
3and SiH
4, SiH
4flow 500～1000sccm/min, NH
3flow 1000～4000sccm/min, keeps pressure constant state, pressure limit 0.5-1.5Torr, and, the plated film time is 100～150s;
Step 3, second layer thin film deposition, directly passes into reacting gas, SiH to reaction chamber
4flow 500～1000sccm/min, NH
3flow 6000～7000sccm/min, pressure limit 1.0～2.0Torr, the plated film time is 250s-500s;
Step 4, deposited aluminum oxide thin film, adopts ald to prepare aluminum oxide film.
The utility model is a kind of solar battery sheet of anti-PID effect, as shown in Figure 1, comprises silicon chip 4, matte, diffusion emitter junction and electrode, on emitter junction surface, there are three layers of passivated reflection reducing to penetrate film, described ground floor is SiNx1, and refractive index is 2.4, and thickness is 10nm, second layer SiNx2, refractive index is 2.05, and thickness is 70nm, and the 3rd layer is aluminium oxide 3, refractive index is 1.85, and thickness is 5nm.
Embodiment 2
The utility model is a kind of solar battery sheet of anti-PID effect, comprise silicon chip, matte, diffusion emitter junction and electrode, have three layers of passivated reflection reducing to penetrate film on emitter junction surface, described ground floor is SiNx, refractive index is 2.3, thickness is 5nm, second layer SiNx, and refractive index is 2.0, thickness is 80nm, the 3rd layer is aluminium oxide, and refractive index is 1.85, and thickness is 10nm.
Embodiment 3
The utility model is a kind of solar battery sheet of anti-PID effect, comprise silicon chip, matte, diffusion emitter junction and electrode, have three layers of passivated reflection reducing to penetrate film on emitter junction surface, described ground floor is SiNx, refractive index is 2.2, thickness is 10nm, second layer SiNx, and refractive index is 2.0, thickness is 75nm, the 3rd layer is aluminium oxide, and refractive index is 1.9, and thickness is 5nm.
By the cell piece of above-mentioned comparative example and embodiment, adopt identical encapsulating material to be packaged into assembly, under the bias voltage of-1000V, to carry out after the PID of 96h, result is as follows:
| Experimental state | Power/W before PID | Power/W after PID | Decay |
| Comparative example | 248.1 | 198.4 | 20％ |
| Embodiment 1 | 248.1 | 243.3 | 1.85％ |
| Embodiment 2 | 248 | 243 | 2.00％ |
| Embodiment 3 | 248 | 242.8 | 2.10％ |
After PID100h, test data is less than 5%, illustrates and uses this coating process to reach elimination PID effect completely.
Cell piece of the present utility model is compared with conventional crystal silicon cell, has increased the anti-PID effect layer being deposited on photic zone, and by the Proper Match of each thin-film refractive index and thickness, has effectively eliminated PID effect.
The above embodiment has only expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (5)
1. a solar battery sheet for anti-PID effect, comprises silicon chip, matte, diffusion emitter junction and electrode, it is characterized in that, on described diffusion emitter junction surface, there are three layers of passivated reflection reducing to penetrate film, ground floor is SiNx, and refractive index is 2.2-2.4, and thickness is 5-10nm, the second layer is SiNx, refractive index is 1.9-2.1, and thickness is 50-80nm, and the 3rd layer is aluminium oxide, refractive index is 1.8-1.9, and thickness is 2-10nm.
2. the solar battery sheet of a kind of anti-PID effect according to claim 1, is characterized in that, the film of described SiNx for adopting tubular type or board-like plasma chemical vapor deposition process to prepare.
3. the solar battery sheet of a kind of anti-PID effect according to claim 1, is characterized in that, described aluminium oxide is the aluminium oxide that plasma enhanced chemical vapor deposition method or atomic layer deposition method prepare.
4. the solar battery sheet of a kind of anti-PID effect according to claim 1, is characterized in that, described silicon wafer-based is polysilicon chip.
5. the solar battery sheet of a kind of anti-PID effect according to claim 1, it is characterized in that, described ground floor is SiNx, and refractive index is 2.4, and thickness is 10nm, the described second layer is SiNx, refractive index is 2.05, and thickness is 70nm, and described the 3rd layer is aluminium oxide, refractive index is 1.85, and thickness is 5nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420200809.4U CN203895468U (en) | 2014-04-23 | 2014-04-23 | PID effect resistance solar energy cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420200809.4U CN203895468U (en) | 2014-04-23 | 2014-04-23 | PID effect resistance solar energy cell |
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| Publication Number | Publication Date |
|---|---|
| CN203895468U true CN203895468U (en) | 2014-10-22 |
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ID=51721830
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420200809.4U Expired - Fee Related CN203895468U (en) | 2014-04-23 | 2014-04-23 | PID effect resistance solar energy cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494262A (en) * | 2018-12-28 | 2019-03-19 | 苏州腾晖光伏技术有限公司 | A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method |
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
-
2014
- 2014-04-23 CN CN201420200809.4U patent/CN203895468U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494262A (en) * | 2018-12-28 | 2019-03-19 | 苏州腾晖光伏技术有限公司 | A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method |
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141022 Termination date: 20150423 |
|
| EXPY | Termination of patent right or utility model |