CN203895448U - Plated-film-coated wafer packaging structure with electromagnetic wave interference resistance - Google Patents
Plated-film-coated wafer packaging structure with electromagnetic wave interference resistance Download PDFInfo
- Publication number
- CN203895448U CN203895448U CN201420144418.5U CN201420144418U CN203895448U CN 203895448 U CN203895448 U CN 203895448U CN 201420144418 U CN201420144418 U CN 201420144418U CN 203895448 U CN203895448 U CN 203895448U
- Authority
- CN
- China
- Prior art keywords
- plated film
- wafer
- plated
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 239000010410 layer Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 11
- 239000007888 film coating Substances 0.000 claims description 7
- 238000009501 film coating Methods 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 5
- 230000000694 effects Effects 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The utility model provides a plated-film-coated wafer packaging structure with electromagnetic wave interference resistance. Mainly, a plated film binding layer, a plated film conducting layer and a plated film protective layer are formed a relative outer side of a wafer packaging body unit in order. The plated film binding layer can raise the binding force between the wafer packaging body unit and the plated film conducting layer. The plated film conducting layer can generate electromagnetic shielding and prevents electromagnetic interference. The plated film protective layer can prevent the plated film conducting layer from oxidation or corrosion. A plurality of metal plated film layers are formed at the outer side of the wafer packaging body unit, the metal plated film layers have advantages of thin thickness, light weight, low resistance and good electromagnetic shielding effect, and thus the problems of high manufacturing cost, large volume and heavy weight when wafers of present electronic products employs outer covers made of metal are solved.
Description
Technical field
The utility model relates to a kind of wafer packaging construction, and espespecially a kind of tool anti electromagnetic wave disturbs the wafer packaging construction of plated film coating.
Background technology
Scientific and technological flourish now, the electronic product of many use integrated electronics or wafer is come out one after another, also be full of in the middle of people's life simultaneously, too numerous to enumerate such as computer, notebook computer (or panel computer), mobile phone etc., but be accompanied by the extensive utilization of electronic product, the frequency electromagnetic waves producing when electronic product is used has also increased the harm of human body and other electronic product.For preventing that the electromagnetic wave that electronic product produces from working the mischief to human body or disturbing other electronic product, current many electronic products carry out the processing of electromagnetic shielding during at the shell of electronic component or in wafer package, except electromagnetic wave that can minimizing itself leaks outside, also can further reduce the interference of external electromagnetic ripple.
Refer to shown in Fig. 3 and 4, it is in wafer encapsulation body 80 arranged outside one cross sections, to be the enclosing cover 90 of ㄇ type that the anti electromagnetic wave of existing wafer package disturbs countermeasure, this wafer encapsulation body 80 includes a substrate 81, one wafer 82 and a packaging body 83, this wafer 82 is located on the surface of substrate 81, this packaging body 83 is formed on the surface of substrate 81 and coated this wafer 82, the Surface Contact of this enclosing cover 90 and substrate 81 complete coated this packaging body 83, this packaging body 83 separates this wafer 82 and is electrically insulated with this enclosing cover 90 generation, utilize this metal enclosing cover 90 to form electromagnetic shielding to protect this wafer 82 not to be subject to extraneous Electromagnetic Interference.Yet the isolation method of the enclosing cover 90 of the covering metal system of employing, need with mould pressed metal sheet, to form this enclosing cover 90 in advance, and because the sheet metal of compacting need have certain thickness (0.1mm is to number mm), therefore the shielding isolation method of existing use metal enclosing cover 90 processed has, manufacturing cost is high, volume large and the problem of Heavy Weight.
Utility model content
As described in front taking off, it is high that the metal enclosing cover processed that the wafer package anti electromagnetic wave of existing electronic product disturbs countermeasure to use has manufacturing cost, volume is large, the problem of Heavy Weight, therefore main purpose of the present utility model is to provide a tool anti electromagnetic wave to disturb the wafer packaging construction of plated film coating, mainly in plated film mode, to form more than one metal-plated rete in the relative outside of wafer packaging construction, the metal material that this metal-plated rete is used is less, there is low cost of manufacture, thin thickness and lightweight advantage, solve existing use metal enclosing cover and prevented the problem that Electromagnetic Interference causes.
For reaching aforementioned object, the technical way of taking is to make aforementioned tool anti electromagnetic wave disturb the wafer packaging construction of plated film coating to include:
One wafer package body unit, it comprises a substrate, a wafer and a packaging body, and this wafer is located at the wherein simultaneously upper of substrate, and this packaging body is formed on substrate and coated this wafer;
One plated film following layer, it is formed at the relative outside of this packaging body;
One coated conducting layer, it is formed at the relative outside of this plated film following layer; And
One plated film protective layer, it is formed at the relative outside of this coated conducting layer.
Utilize the wafer packaging construction of the tool anti electromagnetic wave interference plated film coating of aforementioned components composition, mainly sequentially to form this plated film following layer in the relative outside of this wafer package body unit, this coated conducting layer and this plated film protective layer, this plated film following layer can improve the adhesion between packaging body and coated conducting layer, this coated conducting layer can produce electromagnetic shielding and prevent electromagnetic interference, plated film protective layer can prevent that coated conducting layer from producing oxide etch again, utilize plated film mode to form the metal-plated rete of multilayer, the metal material using is few compared with metal enclosing cover, and there is thin thickness, lightweight, the advantage that low resistance and effectiveness are good, the wafer encapsulation body that has solved existing electronic product is used the manufacturing cost of metal enclosing cover generation processed high, the problem of the large and Heavy Weight of volume.
Accompanying drawing explanation
Fig. 1 is the profile of the utility model one preferred embodiment.
Fig. 2 is the sectional perspective profile of the utility model one preferred embodiment.
Fig. 3 is the profile of existing wafer packaging construction.
Fig. 4 is the sectional perspective profile of existing wafer packaging construction.
Drawing reference numeral explanation
10 wafer package body unit 11 substrates
12 wafer 13 packaging bodies
20 plated film following layer 30 coated conducting layers
40 plated film protective layers
80 wafer encapsulation body 81 substrates
82 wafer 83 packaging bodies
90 enclosing covers
Embodiment
Below coordinate accompanying drawing and preferred embodiment of the present utility model, further setting forth the utility model is to reach the technological means that predetermined utility model object is taked.
About a preferred embodiment of the present utility model, refer to shown in Fig. 1, mainly in metal coating mode, to be sequentially formed with the metal-plated rete of multilayer in the relative outside of a wafer package body unit 10, these metal-plated retes are respectively a plated film following layer 20, one coated conducting layer 30 and a plated film protective layer 40, wherein, this wafer package body unit 10 includes a substrate 11, one wafer 12 and a packaging body 13, the lamellar body that this substrate 11 is thin types tool one surface, this wafer 12 is integrated circuit (IC) and is located on the surface of this substrate 11, this packaging body 13 is formed on the surface of substrate 11 and coated this wafer 12, this packaging body 13 has the advantages that to be electrically insulated.
This wafer package body unit 10 wants to carry out outer radio frequency (RF) the power generation radiofrequency plasma that metal coating needs to utilize electricity slurry (Plasma) system before that covers, after a vacuum chamber passes into reacting gas, produce high-octane ion and go to clash into the surface of the packaging body 13 of wafer package body unit 10, the surface of this packaging body 13 is carried out to the processing such as upgrading, activation, hydrophily and alligatoring, make the metal-plated rete next forming can obtain good tack.
This plated film following layer 20 is a jet-plating metallization film or a deposited metal film, to make with the metals such as stainless steel (Sus), titanium (Ti), nickel (Ni), chromium (Cr) or nickel chromium triangle (Ni-Cr) or its alloy material, in the plated film mode of sputter or evaporation, be attached to the relative outside of this packaging body 13, because aforementioned metal or alloy material have high adhesion, therefore can reduce the thickness of the metallic diaphragm of sputter or evaporation.
This coated conducting layer 30 is a jet-plating metallization film or a deposited metal film, to make with copper (Cu) or silver (Ag) contour conductive metal material, in the plated film mode of sputter or evaporation, be attached to the relative outside of this plated film following layer 20, the metallic film of the high conductivity that this coated conducting layer 30 is shelly, its impedance is less than 5 ohm (Ω) in diagonal place inside the housing forming, so the coated conducting layer 30 of this high conductivity can prevent the inner electromagnetic wave producing of wafer package body unit 10, is dissipated into the external world or prevents this wafer package body unit 10 of extraneous Electromagnetic Interference.
This plated film protective layer 40 is a jet-plating metallization film or a deposited metal film; to make with the metals such as stainless steel (Sus), titanium (Ti), nickel (Ni), chromium (Cr) or nickel chromium triangle (Ni-Cr) or its alloy material; in the plated film mode of sputter or evaporation, be attached to the relative outside of this coated conducting layer 30; because aforementioned metal or alloy material have high antioxidant, therefore can effectively protect and prevent this coated conducting layer 30 oxidations or corrosion.
From the above; the utility model is in metal coating mode, to be sequentially formed with plated film following layer 20, coated conducting layer 30 and plated film protective layer 40 in the outside of this wafer package body unit 10; these metal-plated retes provide respectively the function of high adhesion, electromagnetic shielding and antioxidant anticorrosive; simultaneously these metal-plated retes have advantages of thin thickness (0.1 μ m is to number μ m), lightweight, low resistance is good with effectiveness, the wafer encapsulation body that can solve existing electronic product is used the manufacturing cost of metal enclosing cover generation processed high, volume greatly and the problem of Heavy Weight.
The above is only preferred embodiment of the present utility model, not the utility model is done to any pro forma restriction, although the utility model discloses as above with preferred embodiment, yet not in order to limit the utility model, any those skilled in the art, within not departing from the scope of technical solutions of the utility model, should utilize the technology contents of above-mentioned announcement to make a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not depart from technical solutions of the utility model, any simple modification of above embodiment being done according to technical spirit of the present utility model, equivalent variations and modification, all still belong in the scope of technical solutions of the utility model.
Claims (2)
1. tool anti electromagnetic wave disturbs a wafer packaging construction for plated film coating, it is characterized in that including:
One wafer package body unit, it comprises a substrate, a wafer and a packaging body, and this wafer is located at the wherein simultaneously upper of substrate, and this packaging body is formed on substrate and coated this wafer;
One plated film following layer, it is formed at the relative outside of this packaging body;
One coated conducting layer, it is formed at the relative outside of this plated film following layer; And
One plated film protective layer, it is formed at the relative outside of this coated conducting layer.
2. tool anti electromagnetic wave as claimed in claim 1 disturbs the wafer packaging construction of plated film coating, it is characterized in that, this plated film following layer, coated conducting layer and plated film protective layer are jet-plating metallization film or deposited metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420144418.5U CN203895448U (en) | 2014-03-27 | 2014-03-27 | Plated-film-coated wafer packaging structure with electromagnetic wave interference resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420144418.5U CN203895448U (en) | 2014-03-27 | 2014-03-27 | Plated-film-coated wafer packaging structure with electromagnetic wave interference resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203895448U true CN203895448U (en) | 2014-10-22 |
Family
ID=51721810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420144418.5U Expired - Lifetime CN203895448U (en) | 2014-03-27 | 2014-03-27 | Plated-film-coated wafer packaging structure with electromagnetic wave interference resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203895448U (en) |
-
2014
- 2014-03-27 CN CN201420144418.5U patent/CN203895448U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141022 |
|
| CX01 | Expiry of patent term |