CN203761272U - Power conversion device - Google Patents
Power conversion device Download PDFInfo
- Publication number
- CN203761272U CN203761272U CN201420060774.9U CN201420060774U CN203761272U CN 203761272 U CN203761272 U CN 203761272U CN 201420060774 U CN201420060774 U CN 201420060774U CN 203761272 U CN203761272 U CN 203761272U
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- power
- inverter circuit
- converting device
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- 238000006243 chemical reaction Methods 0.000 title abstract description 5
- 239000003990 capacitor Substances 0.000 claims abstract description 44
- 238000009499 grossing Methods 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Inverter Devices (AREA)
Abstract
The utility model relates to a power conversion device. In the power conversion device of an inverter circuit without a capacitor, surge current which flows in a buffer capacitor and a semiconductor switch element which forms the inverter circuit can be inhibited when a power supply is switched on or off and the like. According to the inverter circuit without the capacitor, on an input side, a smoothing capacitor which is composed of a large capacity electrolytic capacitor and the like is not arranged. The power conversion device comprises a diode rectification circuit which is used for rectifying alternating current provided by an alternating current power supply, the inverter circuit (4) which is connected with the rear section of the diode rectification circuit, the buffer capacitor (5) which is used for suppressing high frequency noises and is connected in parallel with the input side of the inverter circuit (4), and a surge current absorbing element (6) which is connected in parallel with the buffer capacitor (5).
Description
Technical field
The utility model relates to power-converting device.
Background technology
In the past, come, the power-converting device of the AC load such as CD-ROM drive motor (motor), to be generally configured at the leading portion of inverter (inverter) circuit that the direct current after rectification is transformed into alternating current and to possess smmothing capacitor (capacitor) the alternating voltage applying from AC power being carried out to rectification.As this smmothing capacitor, for the fluctuation of the direct voltage after the rectification causing because of the output voltage of AC power (ripple) is removed to realize smoothing, and absorb surge (surge) electric current when alternating voltage is connected or cut off, can use jumbo smoothing capacitor.
This smoothing capacitor is generally made up of jumbo electrolytic capacitor.The jumbo electrolytic capacitor using as this smoothing capacitor model in the parts that form power-converting device is large and expensive, causes the maximization of power-converting device, cost to increase (cost rise).In addition, because the life expectancy of electrolytic capacitor is shorter than the miscellaneous part that forms power-converting device, so in order to maintain the performance of the equipment of assembling power-converting device, need to change smoothing capacitor or power-converting device.In addition, about the equipment that cannot change of smoothing capacitor, power-converting device, the life expectancy of equipment also shortens corresponding to the life expectancy of smoothing capacitor.Therefore, the inverter circuit (for example patent documentation 1) that a kind of so-called capacitorless (less) that does not possess such smoothing capacitor forms has been proposed.In the technology shown in patent documentation 1, for example possesses buffering (snubber) capacitor being formed by film (film) capacitor of low capacity etc. at the input side of inverter circuit, by making the electric capacity of this buffer condenser in prescribed limit, carry out high order harmonic component noise (noise), the surge current of control inverter circuit.
[patent documentation 1] TOHKEMY 2012-157242 communique
But, in above-mentioned prior art, the surge current flowing through in can be due to the electric capacity of the size of the line impedance (impedance) of power supply supply line, buffer condenser cannot suppressing buffer condenser, inverter circuit in the time of power connection or when dump etc.In this situation, as buffer condenser, form the thyristor of inverter circuit of back segment, need to adopt proof voltage value, element that resistance to current value is large, exist cost to increase, cause the problems such as equipment enlarging.Utility model content
The utility model In view of the foregoing proposes, its object is, provide a kind of in the power-converting device of inverter circuit that possesses capacitorless formation, can be suppressed at buffer condenser in the time of power connection or when dump etc., form the power-converting device of the surge current flowing through in semiconductor switch (switching) element of inverter circuit, wherein, above-mentioned capacitorless forms and refers at input side do not have forming of the smoothing capacitor that is made up of jumbo electrolytic capacitor etc.
Realize object in order to solve above-mentioned problem, the power-converting device that the utility model relates to is to possess the power-converting device at input side without the inverter circuit of smoothing capacitor, it is characterized in that, possess: diode (diode) rectification circuit, carries out rectification to the alternating current of supplying with from AC power; Above-mentioned inverter circuit, is connected with the back segment of above-mentioned diode rectifier circuit; High-frequency noise suppresses the buffer condenser of use, is connected in parallel with the input side of above-mentioned inverter circuit; And surge current absorber element, be connected in parallel with above-mentioned buffer condenser.
In addition, the power-converting device that the utility model relates to, possesses the inverter circuit that does not there is smoothing capacitor and formed by thyristor at input side, described thyristor is formed by wide band gap semiconducter, described power-converting device is characterised in that, possess: diode rectifier circuit, carries out rectification to the alternating current of supplying with from AC power; Described inverter circuit, is connected with the back segment of described diode rectifier circuit; High-frequency noise suppresses the buffer condenser of use, is connected in parallel with the input side of described inverter circuit; And surge current absorber element, be connected in parallel with described buffer condenser.
According to the utility model, due in the power-converting device of inverter circuit that possesses capacitorless formation, the rheostat (varistor) that surge current is absorbed to use is connected in parallel with the input side of buffer condenser and inverter circuit, wherein, above-mentioned capacitorless forms and refers at input side do not have forming of the smoothing capacitor that is made up of jumbo electrolytic capacitor etc., so can suppress power connection time etc. at buffer condenser, in the thyristor of formation inverter circuit, flow through surge current, can reduce buffer condenser, the proof voltage value of thyristor, resistance to current value, therefore play low cost (cost) change that can realize power-converting device, miniaturization and assemble the cost degradation of the equipment of this power-converting device, the effect of miniaturization.
Brief description of the drawings
Fig. 1 is the figure of a configuration example of the power-converting device that represents that execution mode relates to.
Fig. 2 is the figure that represents not possess an example of the DC bus-bar voltage waveform after power connection in rheostatic formation in the past.
Fig. 3 is the figure that represents an example of the DC bus-bar voltage waveform after power connection in power-converting device that execution mode relates to.
Fig. 4 is the figure that represents rheostatic voltage/current characteristic.
Fig. 5 is the figure that represents an example of the output voltage waveforms of diode rectifier circuit.
Description of reference numerals
1-AC power, 2-diode rectifier circuit, 3-circuit breaker, 4-inverter circuit, 5-buffer condenser, 6-rheostat, 7a, 7b, 7c, 7d, 7e, 7f-thyristor, 8-power-converting device, 9-high-voltage side DC bus, 10-low voltage side DC bus, 11-motor (AC load), 12-line impedance.
Embodiment
Referring to accompanying drawing, the power-converting device that execution mode of the present utility model is related to describes.Wherein, the utility model is not limited by execution mode shown below.
Execution mode.
Fig. 1 is the figure of a configuration example of the power-converting device that represents that execution mode relates to.In the example shown in Fig. 1, the power-converting device 8 that present embodiment relates to is configured to from AC power 1 and is supplied to industrial alternating current via circuit breaker (breaker) 3, supplies with desirable alternating current to the motor 11 as AC load.
As shown in Figure 1, the power-converting device 8 that present embodiment relates to possesses diode rectifier circuit 2, buffer condenser 5, rheostat 6 and inverter circuit 4.
Diode rectifier circuit 2, in the example shown in Fig. 1, is connected and is formed by 6 cache switching diodes bridge joints (bridge), and the three-phase alternating current of supplying with via circuit breaker 3 from AC power 1 is carried out to full-wave rectification.
Inverter circuit 4 is not have at input side the inverter circuit that the so-called capacitorless of the smoothing capacitor being made up of jumbo electrolytic capacitor etc. forms, by three thyristors (upper arm (arm) side thyristor) 7a being connected with the high-voltage side lead-out terminal (high-voltage side DC bus 9) of diode rectifier circuit 2, 7b, 7c and three thyristors (the underarm side thyristor) 7d being connected with the low voltage side lead-out terminal (low voltage side DC bus 10) of diode rectifier circuit 2, 7e, 7f full-bridge (full-bridge) connects and forms, to be become three-phase alternating voltage and export to motor (AC load) 11 by the DC voltage conversion after diode rectifier circuit 2 full-wave rectifications.
Each thyristor 7a, 7b, 7c, 7d, 7e, 7f are for example by IGBT(InsulatedGate Bipolar Transistor) or MOS-FET(Metal Oxide Semiconductor-Field Effect Transistor) etc. formation.In the present embodiment, as the each thyristor 7a, 7b, 7c, 7d, 7e, the 7f that form inverter circuit 4, use by carborundum (SiC) or gallium nitride (gallium) switch element that (GaN) broad-band gap (wide-band gap) (hereinafter referred to as " the WBG ") semiconductor such as based material or diamond (diamond) forms.This formation intention and effect are by aftermentioned.
Buffer condenser 5 is for example the film capacitor of the low capacity of the following degree of 1 μ F, is connected in parallel with the input side of inverter circuit 4, is connected between high-voltage side DC bus 9 and low voltage side DC bus 10.This buffer condenser 5 has the function that high-frequency noise that the switch of each thyristor 7a, 7b, 7c because forming inverter circuit 4,7d, 7e, 7f is produced suppresses.
As the formation of power-converting device in the past that possesses the inverter circuit 4 that capacitorless forms, it is generally the input side at inverter circuit 4, only possess at the back segment of diode rectifier circuit 2 formation that high-frequency noise suppresses the buffer condenser 5 of use, wherein, above-mentioned capacitorless forms and refers at input side do not have forming of the smoothing capacitor that is made up of jumbo electrolytic capacitor etc.In the present embodiment, be configured to rheostat 6 and buffer condenser 5 are connected in parallel.
Fig. 2 is the figure that represents an example that does not possess the DC bus-bar voltage waveform after the power connection in rheostatic formation in the past.In Fig. 2, transverse axis represents the time, and the longitudinal axis represents the magnitude of voltage of DC bus-bar voltage.
Generally, owing to existing by connecting up between AC power 1 and diode rectifier 2, the line impedance 12(that substrate pattern (pattern) causes is with reference to Fig. 1), if so connect the circuit breaker 3 shown in (on) Fig. 1 at the t0 shown in Fig. 2, start to supply with the three-phase alternating current from AC power 1 to power-converting device 8, energy (energy) flows into the contained inductance of this line impedance 12 (inductance) component Le, as shown in Figure 2, in DC bus-bar voltage waveform, produce the surge voltage of Le × di/dt that d-c bus voltage value Vd when stable is large, the surge current corresponding with the size of this surge voltage flows into buffer condenser 5 and inverter circuit 4.
In addition, stopping the three-phase alternating current from AC power 1 to supply with to power-converting device 8, also produce same surge voltage, surge current in the case of making circuit breaker 3 disconnect (off).
Therefore, as buffer condenser 5, form thyristor 7a, 7b, 7c, 7d, 7e, the 7f of inverter circuit 4 of back segment, need to adopt there are the surge voltage that can bear while starting supply with or stop supplying with this AC power 1, the proof voltage value of surge current, the parts of resistance to current value.That is, the above parts of required specification (specification) while needing operating stably, the cost that causes power-converting device and assemble the equipment of this power-converting device increases, maximizes.
Fig. 3 is the figure of an example of the DC bus-bar voltage waveform after the power connection representing in power-converting device that execution mode relates to.In Fig. 3, transverse axis represents the time, and the longitudinal axis represents the magnitude of voltage of DC bus-bar voltage.In Fig. 3, also same with Fig. 2, represent the example that the circuit breaker 3 shown in Fig. 1 is connected at t0.
In the power-converting device 8 relating in the present embodiment shown in Fig. 1, as mentioned above, be configured to rheostat 6 and buffer condenser 5 are connected in parallel, surge voltage when inhibition AC power 1 starts to supply with or when supply stops, is absorbed the surge current accompanying with the generation of this surge voltage by rheostat 6.
Fig. 4 is the figure that represents rheostatic voltage/current characteristic.In Fig. 4, transverse axis represents the voltage between rheostatic terminal, and the longitudinal axis represents the electric current flowing through in rheostat.Rheostat has nonlinearity resistance characteristic as shown in Figure 4, if rheostat be applied in the electric current flowing through be setting I1(in the example shown in Fig. 3, I1=1mA) more than above varistor voltage V1 voltage, the impedance between terminal sharply reduces.
; as mentioned above; being configured to rheostat 6 is connected in parallel with buffer condenser 5; as the characteristic of this rheostat 6; above-mentioned varistor voltage V1 is the value that exceedes the d-c bus voltage value Vd while stablizing; by using the surge voltage that can imagine as power-converting device 8 as the surge tolerance that can allow; can suppress, because the contained inductive component Le of line impedance 12 causes and the surge voltage of Le × di/dt of producing after power connection, can prevent from flowing into excessive surge current to buffer condenser 5 and inverter circuit 4.
By such formation, due to thyristor 7a, 7b, 7c, 7d, 7e, the 7f of the inverter circuit 4 as buffer condenser 5, formation back segment, do not need to adopt to have and can bear AC power 1 while starting to supply with or surge voltage when supply stops etc., the proof voltage value of surge current, the parts of resistance to current value, so cost degradation, the miniaturization that can realize cost degradation, the miniaturization of power-converting device 8 and assemble the equipment of this power-converting device 8.
On the other hand, in the formation of inverter circuit 4 that possesses capacitorless formation, cannot remove due to the output voltage of AC power 1 fluctuation producing in by the direct voltage after diode rectifier circuit 2 full-wave rectifications, so the direct voltage of the pulsation that comprises AC power 1 is supplied to the inverter circuit 4 of back segment, wherein, above-mentioned capacitorless forms and refers at input side do not have forming of the smoothing capacitor that is made up of jumbo electrolytic capacitor etc.
Fig. 5 is the figure that represents an example of the output voltage waveforms of diode rectifier circuit.In Fig. 5, transverse axis represents the time, and the longitudinal axis represents the magnitude of voltage of DC bus-bar voltage.The variation of the DC bus-bar voltage shown in Fig. 5 is helpless to the supply electric power of supplying with to motor (AC load) 11.That is, because becoming, the magnitude of voltage that can apply motor (AC load) 11 from inverter circuit 4 do not comprise from the Vd1 shown in Fig. 5 till the magnitude of voltage Vd1 (dotted arrow) of the variation of Vd, so voltage utilization reduces.
Therefore, do not have in the inverter circuit 4 that the capacitorless of the smoothing capacitor being made up of jumbo electrolytic capacitor etc. forms at input side, in order to obtain the output being equal to the inverter circuit at input side with smoothing capacitor, for the reduction that makes up voltage utilization need to be flow through more electric current in inverter circuit 4.Therefore, form the electric current flowing through in each thyristor 7a, 7b, 7c, 7d, 7e, 7f of inverter circuit 4 and become many, increase as the loss of inverter circuit 4, and the heating of each thyristor 7a, 7b, 7c, 7d, 7e, 7f becomes large.
Therefore, in the present embodiment, as mentioned above, as the each thyristor 7a, 7b, 7c, 7d, 7e, the 7f that form inverter circuit 4, used the switch element being formed by WBG semiconductor.
The switch element being formed by WBG semiconductor with (Si) compared with switch element that based semiconductor forms, owing to thering is the characteristic that switching speed is fast, switching losses is little, so can reduce the loss of inverter circuit 4, can realize high efficiency by silicon (silicon).
In addition, due to the switch element being formed by WBG semiconductor and the switch element being formed by Si based semiconductor, to compare thermal endurance also higher, so can delete cooling mechanism or can miniaturization, therefore can realize inverter circuit 4 miniaturization, power-converting device 8 miniaturization and assemble further miniaturization, the cost degradation of the equipment of this power-converting device 8.
As described above, according to the power-converting device of execution mode, in the formation of inverter circuit that possesses capacitorless formation, wherein, above-mentioned capacitorless formation refers to the forming the smoothing capacitor being made up of jumbo electrolytic capacitor etc. at input side, owing to surge current being absorbed to the rheostat of use and the input side of buffer condenser and inverter circuit is connected in parallel, so can suppress power connection time or when dump etc. at buffer condenser, in the thyristor of formation inverter circuit, flow through surge current, can reduce buffer condenser, the proof voltage value of thyristor, resistance to current value, therefore can realize the cost degradation of power-converting device, miniaturization and assemble the cost degradation of the equipment of this power-converting device, miniaturization.
In addition, as the each thyristor that forms inverter circuit, by using compared with the switch element being formed by Si based semiconductor by the switching losses little and thermal endurance switch element that also high WBG semiconductor forms, can reduce the loss of inverter circuit and realize high efficiency, and realize the further miniaturization of inverter circuit, power-converting device and assemble further miniaturization, the cost degradation of the equipment of this power-converting device.
In addition, in the above-described embodiment, represent surge current to absorb the example that flows through surge current in the thyristor that the rheostat of use and the input side of buffer condenser and inverter circuit be connected in parallel to be suppressed at buffer condenser, to form inverter circuit, but can certainly replace this rheostat and use other surge current absorber elements that can similarly absorb with rheostat surge current, can obtain the effect same with execution mode.
In addition, the effect that uses the switch element being made up of the WBG semiconductor illustrating in the above-described embodiment to bring is not limited to above-mentioned effect.
For example, because the switch element being made up of WBG semiconductor, adverse current prevent that the proof voltage of element is high, allow current density also high, so can realize switch element, adverse current and prevent the further miniaturization of element, as the each thyristor that forms inverter circuit, by using the switch element of these miniaturizations, can realize the further miniaturization of inverter circuit, power-converting device.
In addition, the formation shown in above execution mode is an example of formation of the present utility model, also can combine with other known technology, can certainly omit a part etc. change and form in the scope that does not depart from the utility model purport.
[utilizability in industry]
As implied above, the power-converting device that the utility model relates to is useful to the formation of the inverter circuit that possesses capacitorless formation, wherein, above-mentioned capacitorless forms and refers to forming of the smoothing capacitor that is not made up of jumbo electrolytic capacitor etc. at input side, is especially suitable as the miniaturization of the equipment to assembling this power-converting device, the technology that cost degradation is realized.
Claims (2)
1. a power-converting device, possesses the inverter circuit at input side without the formation of smoothing capacitor, and described power-converting device is characterised in that to possess:
Diode rectifier circuit, carries out rectification to the alternating current of supplying with from AC power;
Described inverter circuit, is connected with the back segment of described diode rectifier circuit;
High-frequency noise suppresses the buffer condenser of use, is connected in parallel with the input side of described inverter circuit; And
Surge current absorber element, is connected in parallel with described buffer condenser.
2. a power-converting device, possesses the inverter circuit that does not have smoothing capacitor and be made up of thyristor at input side, and described thyristor is formed by wide band gap semiconducter, and described power-converting device is characterised in that to possess:
Diode rectifier circuit, carries out rectification to the alternating current of supplying with from AC power;
Described inverter circuit, is connected with the back segment of described diode rectifier circuit;
High-frequency noise suppresses the buffer condenser of use, is connected in parallel with the input side of described inverter circuit; And
Surge current absorber element, is connected in parallel with described buffer condenser.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2013032295A JP2014165949A (en) | 2013-02-21 | 2013-02-21 | Power conversion apparatus |
JP2013-032295 | 2013-02-21 |
Publications (1)
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CN203761272U true CN203761272U (en) | 2014-08-06 |
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CN201420060774.9U Expired - Lifetime CN203761272U (en) | 2013-02-21 | 2014-02-10 | Power conversion device |
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CN (1) | CN203761272U (en) |
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CN110546872A (en) * | 2017-04-24 | 2019-12-06 | 松下知识产权经营株式会社 | power conversion system |
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- 2013-02-21 JP JP2013032295A patent/JP2014165949A/en active Pending
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CN110718898A (en) * | 2018-07-13 | 2020-01-21 | 科勒公司 | Robust inverter topology |
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Granted publication date: 20140806 |
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CX01 | Expiry of patent term |