CN102544266A - Manufacture method of high-lighting-effect white-light light-emitting diode (LED) inversion chip - Google Patents
Manufacture method of high-lighting-effect white-light light-emitting diode (LED) inversion chip Download PDFInfo
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Abstract
The invention relates to a manufacture method of a high-lighting-effect white-light light-emitting diode (LED) inversion chip. The layer structure of the chip sequentially comprises a substrate (1), a buffer layer (2), an N-type layer (3), an N-type respective limiting layer (4), a luminous zone layer (5), a P-type respective limiting layer (6), a P-type layer (7), a P-type ohmic contact layer (8), a light penetrating layer (9), a silica layer (10) and a metal layer (11). A nanometer fluorescent powder layer (28) is coated on the surface of the substrate (1), and the chip is characterized in that the chip is etched into a halfpace structure and forms an annular N-type electrode and a cylindrical P-type electrode, and the cylindrical P-type electrode is wrapped by the annular N-type electrode, solder faces of the annular N-type electrode and the cylindrical P-type electrode connected with a printed circuit board (PCB) are in a horizontal plane at same height. The nanometer fluorescent powder layer is adhered to the substrate through adhering holes, compared with common fluorescent powder, the nanometer fluorescent powder layer can enable the chip to emit white light and become bright and reliable.
Description
Technical field
The present invention relates to a kind of led chip, especially relate to a kind of manufacture method of high light efficiency white light LEDs flip-chip.
Background technology
Using its advantage of Sapphire Substrate is that chemical stability is good, and it is ripe relatively not absorb visible light, moderate cost, manufacturing technology, therefore becomes to be used for the most general substrate of GaN growth.In the encapsulation process of LED, all directly be fixed on the Sapphire Substrate face on the heating panel.In the course of work of LED, its luminous zone is the root of device heating.Because Sapphire Substrate itself is a kind of insulating material, and heat conductivility is more relatively poor than GaN material, thus its operating current of LED device of this formal dress all there is certain restriction, with luminous efficiency and the working life of guaranteeing LED.For improving the heat dispersion of device, people have designed a kind of led chip structure, the i.e. led chip of inverted structure.
In addition, the structure of the GaN chip of traditional Sapphire Substrate, electrode just is positioned at the exiting surface of chip.Owing to the limited conductivity of p-GaN layer, therefore require to be used for the metal level of electric current diffusion at p-GaN laminar surface deposition one deck, this current-diffusion layer is made up of Ni and Au, meeting absorption portion light, thus reduce light extraction efficiency.If with flip-chip, current-diffusion layer (metallic reflector) just becomes the reflection of light layer so, and light can be launched through Sapphire Substrate like this, thereby improves light extraction efficiency.
After the upside-down mounting design that proposes chip, people have carried out a large amount of research and exploration to its feasibility.Because the led chip limitation of design, packaging yield is very low always, and reason is following: the first, N type electrode zone is relatively little, is difficult to the respective regions contraposition with pcb board; The second, N type electrode position is high more a lot of than P type electrode position, is easy to cause rosin joint, sealing-off situation; Three, for making N type electrode, often to remove active area greatly artificially, reduce the light-emitting area of device so widely, directly influence the LED luminous efficiency.
Moreover though the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency still is lower than sodium vapor lamp (150lm/W).So, the luminous efficiency of which factor affecting LED? With regard to white light LEDs, its encapsulation finished product luminous efficiency is by internal quantum efficiency, electric injection efficiency, the product decision of extraction efficiency and packaging efficiency.Shown in figure 34; Utilize MOCVD, VPE, MBE or LPE technology growth of device (like LED, LD etc.) structure on substrate 30, respectively be substrate 30, n type material layer 31, luminous zone 32, P-type material layer 33, P type electrode 34, P level soldering-tin layer 35, pcb board 36 and heating panel 40 from top to bottom.Wherein also be connected N type electrode 37, N level soldering-tin layer 38 and pcb board 39 successively between n type material layer 31 and the heating panel 40.
The technological deficiency that this traditional LED flip-chip exists is following:
1, N type electrode 37 present positions and P type electrode 34 apart from each others in the horizontal direction, N type electrode 37 has harsh requirement to the Position Design of the pcb board 39 of its below, has influence on the encapsulation acceptance rate.
2, N type electrode 37 positions are high more a lot of than P type electrode 34 positions, cause the gap between the pcb board 39 of itself and below bigger, are easy to when scolding tin to make that N level soldering-tin layer 38 is long and cause the generation of rosin joint or sealing-off.
3, in order to make the N type electrode 37 and the pcb board 39 of its below to weld, need remove luminous zone greatly, have influence on the luminous efficiency of led chip.
4, electrode zone is big inadequately, influences injection current efficient and then has influence on the luminous efficiency of led chip.
5, P type electrode and N type electrode position cause the electronics flow path to differ in the chip both sides, and like Figure 35, it is inhomogeneous to form resistance, and chip light emitting district non-uniform light has influence on the luminous efficiency of led chip.
Summary of the invention
The present invention has designed a kind of manufacture method of high light efficiency white light LEDs flip-chip, and it has solved following technical problem and is:
(1) N type electrode district and P type electrode district are relatively little, are difficult to the respective regions contraposition with pcb board, can have influence on the acceptance rate of packaging effect and LED product;
(2) N type electrode position is high more a lot of than P type electrode position, is easy to cause rosin joint, sealing-off situation;
(3) for making N type electrode, often to remove active area greatly artificially, reduce the light-emitting area of device so widely, directly influence the LED luminous efficiency;
(4) P type electrode and N type electrode zone are big inadequately, influence injection current, have directly influenced the led chip luminous efficiency;
(5) P type electrode and N type electrode position cause the electronics flow path to differ in the chip both sides, and it is inhomogeneous to form resistance, and chip light emitting district non-uniform light has influence on the luminous efficiency of led chip.
In order to solve the technical problem of above-mentioned existence, the present invention has adopted following scheme:
A kind of manufacture method of high light efficiency white light LEDs flip-chip; The layer structure of not making preceding chip that relates in this manufacture method comprises substrate (1), resilient coating (2), N type layer (3), N type limiting layer (4), luminous zone layer (5), P type difference limiting layer (6), P type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10) and metal level (11) respectively from bottom to up successively, and this manufacture method may further comprise the steps:
Form the district at annular N type electrode and form formation N type electrode light penetrated bed ito thin film (191) in the district, said N type electrode light penetrated bed ito thin film (191) is a hierarchic structure, and the hierarchic structure bottom is connected with N type layer (3) exposed region of flip-chip; Hierarchic structure top is laid on the dielectric insulating film (16) of metal level (11) and halfpace structure outer wall; The hierarchic structure middle part is provided with N type electrode metal alloy-layer (23) and the final N of formation type electrode through forming dielectric insulating film (16) and P type electrode isolation on the halfpace structure outer wall on N type electrode light penetrated bed ito thin film (191) hierarchic structure top;
Further; When removing silicon dioxide layer (10) between ring-type the 7th photoresist layer (22) and square the 7th photoresist layer (22), metal level (11) and light penetrated bed ito thin film (19) in the step 47; The P type electrode light penetrated bed ito thin film (192) that keeps is the trough of belt cube structure, and makes the silicon dioxide layer (10) and the metal level (11) of P type electrode below wrapped up fully by P type electrode light penetrated bed ito thin film (192).
Further, in said substrate (1), form one or more layers male and fomale(M&F) (12).
Further, said cyclic n nitroso compound type electrode and the said P type electrode pcb board through separately is connected with radiator structure (26).
Further, upward form a plurality of attachment hole (27) through etching at said substrate (1), nano fluorescent bisque (28) sticks to said substrate (1) surface through said a plurality of attachment hole (27).
The manufacture method of this high light efficiency white light LEDs flip-chip is compared with common white light LEDs flip-chip, has following beneficial effect:
(1) the present invention is owing to adhere to layer of annular nano fluorescent bisque through attachment hole on substrate, and this nano fluorescent bisque is compared with common fluorescent material, can be so that the white light that chip sends is bright more reliable.
(2) the present invention is owing to wrapped up silicon dioxide layer and metal level below the P type electrode by P type electrode light penetrated bed ito thin film fully; Increased P type electrode light penetrated bed ito thin film exposed area; Thereby also just increased light penetrated bed area, improved the LED luminous efficiency.
(3) the present invention makes P electrode and N electrode layer area maximum because chip structure comprises N type electrode and P type electrode, obtains maximum injection current, promotes luminous efficiency.
(4) the present invention since N type electrodes use hierarchic structure, only require and remove very little a part of active area, guaranteed the maximization of reflection layer area, obtain optimal luminescent efficient.
(5) the present invention can realize electric current the most uniformly owing to adopt annular N type electrode layer to surround cylindricality P type electrode layer, makes the luminous zone the most even.
(6) also because N type electrode layer and P type electrode layer are in same plane, the encapsulation acceptance rate is higher in the present invention.
Description of drawings
Fig. 1: the led chip among the present invention is without the structural representation before making;
Fig. 2: led chip manufacturing process steps 11 sketch mapes among the present invention;
Fig. 3: led chip manufacturing process steps 12 sketch mapes among the present invention;
Fig. 4: led chip manufacturing process steps 13 sketch mapes among the present invention;
Fig. 5: led chip manufacturing process steps 14 sketch mapes among the present invention;
Fig. 6: led chip manufacturing process steps 21 sketch mapes among the present invention;
Fig. 7: led chip manufacturing process steps 22 sketch mapes among the present invention;
Fig. 8: led chip manufacturing process steps 23 sketch mapes among the present invention;
Fig. 9: led chip manufacturing process steps 24 sketch mapes among the present invention;
Figure 10: led chip manufacturing process steps 10 sketch mapes among the present invention;
Figure 11: led chip manufacturing process steps 302 sketch mapes among the present invention;
Figure 12: led chip manufacturing process steps 303 sketch mapes among the present invention;
Figure 13: led chip manufacturing process steps 304 sketch mapes among the present invention;
Figure 14: led chip manufacturing process steps 305 sketch mapes among the present invention;
Figure 15: led chip manufacturing process steps 306 sketch mapes among the present invention;
Figure 16: led chip manufacturing process steps 307 sketch mapes among the present invention;
Figure 17: led chip manufacturing process steps 308 sketch mapes among the present invention;
Figure 18: led chip manufacturing process steps 309 sketch mapes among the present invention;
Figure 19: led chip manufacturing process steps 310 sketch mapes among the present invention;
Figure 20: led chip manufacturing process steps 311 sketch mapes among the present invention;
Figure 21: led chip manufacturing process steps 41 sketch mapes among the present invention;
Figure 22: led chip manufacturing process steps 42 sketch mapes among the present invention;
Figure 23: led chip manufacturing process steps 43 sketch mapes among the present invention;
Figure 24: led chip manufacturing process steps 44 sketch mapes among the present invention;
Figure 25: led chip manufacturing process steps 45 sketch mapes among the present invention;
Figure 26: led chip manufacturing process steps 46 sketch mapes among the present invention;
Figure 27: led chip manufacturing process steps 47 sketch mapes among the present invention;
Figure 28: led chip manufacturing process steps 48 sketch mapes among the present invention;
Figure 29: led chip manufacturing process steps 51 sketch mapes among the present invention;
Figure 30: led chip manufacturing process steps 52 sketch mapes among the present invention;
The vertical view of Figure 31: Figure 30;
Figure 32: light reflection hint effect figure among Figure 28;
Figure 33: the high light efficiency white light LEDs of the present invention flip-chip is connected sketch map with radiator structure;
Figure 34: led chip structural representation in the prior art;
Figure 35: electron stream is to sketch map among Figure 34.
Description of reference numerals:
1-substrate; 2-resilient coating; 3-N type layer; 4-N type is limiting layer respectively; 5-luminous zone layer; 6-P type is limiting layer respectively; 7-P type layer; 8-P type ohmic contact layer; 9-light penetrated bed; 10-silicon dioxide layer; 11-metal level; 12-male and fomale(M&F); 13-the first photoresist layer; 14-the second photoresist layer; 15-the three photoresist layer; 16-dielectric insulating film; 17-the four photoresist layer; 18-the five photoresist layer; 19-light penetrated bed ito thin film; 191-N type electrode light penetrated bed ito thin film; 192-P type electrode light penetrated bed ito thin film; 20-the six photoresist layer; 21-metal alloy layer; 22-the seven photoresist layer; 23-N type electrode metal alloy-layer; 24-P type electrode metal alloy-layer; 25-pcb board; 26-radiator structure; 27-attachment hole; 28-nano fluorescent bisque;
30-substrate; 31-n type material layer; 32-luminous zone; 33-P-type material layer; 34-P type electrode; 35-P level soldering-tin layer; 36-pcb board; 37-N type electrode; 38-N level soldering-tin layer; 39-pcb board; 40-heating panel.
Embodiment
Below in conjunction with Fig. 1 to Figure 33, the present invention is further specified:
As shown in Figure 1, substrate 1 is a carrier, generally is materials such as sapphire, carborundum, silicon, GaAs, AlN, ZnO or GaN.
On substrate 1, form one deck male and fomale(M&F) 12 with etching earlier, this male and fomale(M&F) 12 can reduce the total reflection of light in chip, increases light emission rate.
LED is become by the pn structure, resilient coating 2,3 layers on N type layer, N type respectively limiting layer 4, P type limiting layer 6 and P type layer 7 are to make required P and the n type material of LED in order to form respectively.Luminous zone layer 5 is luminous zones of LED, and the color of light is by the material decision of active area.
P type ohmic contact layer 8 is last one decks of material growth, and the charge carrier doping concentration of this one deck is higher, and purpose is for making less ohmic contact resistance.
P type metal ohmic contact layer is not formed by growth, but forms through methods such as vapor deposition or sputters, and one of purpose is to make the electrode of device, and two of purpose is for packaging and routing usefulness.
Again through vapor deposition, sputter or other film manufacture method; Form one deck ito thin film on P type ohmic contact layer 8 surfaces; Be used to make the light penetrated bed 9 of light-emitting diode; Ito thin film is generally the tin indium oxide material, is a kind of transparent semiconductor conductive film, generally can make the light extraction efficiency of LED improve 20%-30%.Again through vapor deposition, sputter or other film manufacture method; Form the completely reflecting mirror of silicon dioxide layer 10 and metal level 11 sandwich constructions at light penetrated bed 9; Silicon dioxide layer 10 can improve the current expansion of luminous zone, reduce the electric current pile-up effect, and metal level 11 can reduce the absorption of P electrode pair light as speculum; Increase the extraction of Sapphire Substrate marginal ray, and can be as the heat-conducting plate of chip; But metal is materials such as aluminium, silver or gold on demand.
As shown in Figure 2; Metal level 11 surface coated first photoresist layer 13 (positive glue or negative glue) in Fig. 1 structure; Coating speed is at 2500-5000 rev/min; And between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, in baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
As shown in Figure 3, first photoresist layer 13 of led chip periphery is removed through exposure or visualization way, and forms endless metal layer exposed region.
As shown in Figure 4; Utilize to do carve or the method for chemical corrosion, with the N type of expose portion respectively limiting layer 4, luminous zone layer 5, P type respectively the N type layer 3 of limiting layer 6, P type layer 7, P type ohmic contact layer 8, light penetrated bed 9, silicon dioxide layer 10, metal level 11 and part remove and make the whole LED chip form the halfpace structure.
As shown in Figure 5, first photoresist layer 13 of led chip intermediate rest is all removed.
As shown in Figure 6; At surface coated second photoresist layer 14 of Fig. 5 structure (positive glue or negative glue), coating speed is at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls; In baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
As shown in Figure 7, structural part second photoresist layer 14 of LED flip-chip halfpace is removed through exposure or visualization way, and formed endless metal layer exposed region.
As shown in Figure 8, utilize the method for doing quarter or chemical corrosion, the metal level 11 and the silicon dioxide layer 10 of expose portion are removed, form annular groove.
As shown in Figure 9, remaining second photoresist layer 14 of LED flip-chip is all removed.
Shown in figure 10; Surface coated the 3rd photoresist layer 15 of gained led chip structure in Fig. 9 (positive glue or negative glue); Coating speed is at 2500-5000 rev/min; And between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, in baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
Shown in figure 11, the 3rd photoresist layer 15 on led chip surface is partly removed through exposure or visualization way, form halfpace outer wall exposed region and on halfpace, form annular exposed region.
Shown in figure 12, utilize PECVD or other coating technique, directly prepare one deck dielectric insulating film 16 at body structure surface shown in Figure 11, dielectric insulating film 16 materials are silicon dioxide layer or the good dielectric of other light transmission, thickness is between 100nm-500nm.The mode of dielectric insulating film 16 through plated film covers on the led chip of hierarchic structure and the 3rd photoresist layer 15 surfaces equably.
Shown in figure 13; Be coated with the 4th photoresist layer 17 (positive glue or negative glue) at the LED of Figure 12 body structure surface, coating speed is at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls; In baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
Shown in figure 14, the 4th photoresist layer 17 on led chip surface is partly removed through exposure or visualization way, only keep the 4th photoresist layer 17 of halfpace outer wall vertical coating.
Shown in figure 15; Utilize the method for doing quarter or chemical corrosion; Remove SI semi-insulation deielectric-coating 16; Only keep the dielectric insulating film 16 in the annular groove on dielectric insulating film 16 that the halfpace outer wall vertical arranges and the halfpace, the dielectric insulating film 16 on the halfpace in the annular groove highly equals the thickness of metal level 11 and silicon dioxide layer 10.
Shown in figure 16, remaining the 3rd photoresist layer 15 of led chip and the 4th photoresist layer 17 are all removed.
Shown in figure 17; Surface coated the 5th photoresist layer 18 (positive glue or negative glue) at Figure 16 chip structure; Coating speed is at 2500-5000 rev/min; And between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, in baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
Shown in figure 18, the 5th photoresist layer 18 of led chip annular groove top is partly removed through exposure or visualization way, and formed annular dielectric insulating film exposed region.
Shown in figure 19, utilize the method for doing quarter or chemical corrosion, lean on the dielectric insulating film 16 of exposed at both sides part to remove fully the chip top.
Shown in figure 20, remaining the 5th photoresist layer 18 of led chip is all removed.
Shown in figure 21, again through vapor deposition, sputter or other film manufacture method, on Figure 20 chip structure, form one deck light penetrated bed ito thin film 19, the light penetrated bed and the conduction that are used to make light-emitting diode.
Shown in figure 22; Surface coated the 6th photoresist layer 20 (positive glue or negative glue) at Figure 21 chip structure; Coating speed is at 2500-5000 rev/min; And between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, in baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
Shown in figure 23, the 6th photoresist layer 20 of led chip top is partly removed through exposure or visualization way, and formed light penetrated bed ito thin film exposed region.
Shown in figure 24, utilize PECVD or other coating technique, at chip structure surface preparation layer of metal alloy-layer 21 shown in Figure 23.
Shown in figure 25; At surface coated the 7th photoresist layer 22 of Figure 24 structure (positive glue or negative glue), coating speed is at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls; In baking oven or the iron plate surface baked, stoving time was respectively 30 minutes and 2 minutes.
Shown in figure 26, lean on the 7th photoresist layer 22 of both side surface partly to remove the led chip top through exposure or visualization way, keep ring-type and the 7th square photoresist layer 22 at flip-chip halfpace top.And the endless metal alloy-layer exposed region on formation halfpace below and the halfpace.Can find out among Figure 26; The 7th remaining photoresist layer 22 is divided into two parts; All be positioned on the step of led chip, the metal alloy layer exposed region between the 7th photoresist layer 22 of ring-type and the 7th square photoresist layer 22 is used for P type electrode and two N type electrodes are isolated.
Shown in figure 27; Utilize the method for doing quarter or chemical corrosion; Utilize the method for doing quarter or chemical corrosion; Remove the metal alloy layer 21 that is not covered, also remove silicon dioxide layer 10, metal level 11 and the light penetrated bed ito thin film 19 between ring-type the 7th photoresist layer 22 and square the 7th photoresist layer 22 simultaneously by the 7th photoresist layer 22.Original smooth penetrated bed ito thin film 19 will be divided into N type electrode light penetrated bed ito thin film 191 and P type electrode light penetrated bed ito thin film 192.
Shown in figure 28, remaining the 6th photoresist layer 20 of led chip and the 7th photoresist layer 22 all to be removed, and formed cyclic n nitroso compound type electrode and a P type electrode, P type electrode is by cyclic n nitroso compound type electrodes surrounding.
Shown in figure 29, in order further to improve the luminous efficiency of led chip, utilize ICP, RIE or other lithographic technique that substrate 1 is carried out etching, and form a plurality of attachment hole 27.
Shown in figure 30, utilize glue spreading method to be coated on substrate 1 surface to the nano-phosphor liquid for preparing equably.In 100-180 degree centigrade baking oven, toast then, the time is 10 minutes-1 hour, finally forms layer of even nano fluorescent bisque 28 on substrate 1 surface.
Till the led chip to Figure 30, the main making step of the high light efficiency white light LEDs of the present invention flip-chip is accomplished.
This chip is etched into the halfpace structure and forms cyclic n nitroso compound type electrode and cylindricality P type electrode, and cylindricality P type electrode is by cyclic n nitroso compound type electrodes surrounding, and said cyclic n nitroso compound type electrode is in same elevation of water with the solder side that said cylindricality P type electrode is connected with pcb board.
This N type electrode of inventing high light efficiency white light LEDs flip-chip mainly comprises N type electrode light penetrated bed ito thin film 191 and N type electrode metal alloy-layer 23; Wherein N type electrode light penetrated bed ito thin film 191 is a hierarchic structure, and the hierarchic structure bottom is connected with N type layer 3 exposed region of chip both sides; Hierarchic structure top is connected with N type electrode metal alloy-layer 23, metal level 11 and dielectric insulating film 16, and wherein N type electrode metal alloy-layer 23 is positioned at the top on hierarchic structure top, and metal level 11 and dielectric insulating film 16 are positioned at the below on hierarchic structure top.
The P type electrode of led chip mainly comprises P type electrode metal alloy-layer 24 and P type electrode light penetrated bed ito thin film 192; P type electrode light penetrated bed ito thin film 192 tops are connected with P type electrode metal alloy-layer 24, and P type electrode light penetrated bed ito thin film 192 extends downward light penetrated bed 9 all around and metal level 11 and silicon dioxide layer 10 are limited to wherein; N type electrode metal alloy-layer 23 is positioned at same horizontal plane with P type electrode metal alloy-layer 24.
In addition, can find out to comprise and see through large-area metal level 11, N type electrode metal alloy-layer 23 and P type electrode metal alloy-layer 24, also can reach the heat radiation maximum area.
Shown in figure 31, N type electrodes surrounding P type electrode reaches uniform current, and makes luminous zone and illumination effect reach perfect condition the most uniformly.
Shown in figure 32, from chip top and both sides four sides bright dipping and metal level 11 reflections, can promote chip light emitting efficient greatly.
Shown in figure 33, two N type electrode metal alloy-layers 23 are connected with radiator structure 26 through pcb board 25 respectively with P type electrode metal alloy-layer 24.Because when two N type electrode metal alloy-layers 23 and P type electrode metal alloy-layer 24 positions on same horizontal plane, made they and pcb board 25 solderings, the thickness of soldering layer can effectively be controlled, and avoids rosin joint or sealing-off.
Combine accompanying drawing that the present invention has been carried out exemplary description above; Obvious realization of the present invention does not receive the restriction of aforesaid way; As long as the various improvement of having adopted method design of the present invention and technical scheme to carry out; Or design of the present invention and technical scheme are directly applied to other occasion without improving, all in protection scope of the present invention.
Claims (8)
1. the manufacture method of one kind high light efficiency white light LEDs flip-chip; The layer structure of not making preceding chip that relates in this manufacture method comprises substrate (1), resilient coating (2), N type layer (3), N type limiting layer (4), luminous zone layer (5), P type difference limiting layer (6), P type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10) and metal level (11) respectively from bottom to up successively, and this manufacture method may further comprise the steps:
Step 1, the LED flip-chip is etched into the halfpace structure, and exposes annular N type layer (3) and be used for subsequent step and form N type electrode;
Step 2, etch on the halfpace structure that annular N type electrode forms the district and cylindricality P type electrode forms the district;
Step 3, isolate, on halfpace structure outer wall, form dielectric insulating film (16) in order to realize the conduction between N type electrode and each layer of flip-chip;
Step 4, form at cylindricality P type electrode and to form P type electrode light penetrated bed ito thin film (192) in the district, P type electrode metal alloy-layer (24) is set on P type electrode light penetrated bed ito thin film (192) finally forms P type electrode; Form the district at annular N type electrode and form formation N type electrode light penetrated bed ito thin film (191) in the district, said N type electrode light penetrated bed ito thin film (191) is a hierarchic structure, and the hierarchic structure bottom is connected with N type layer (3) exposed region of flip-chip; Hierarchic structure top is laid on the dielectric insulating film (16) of metal level (11) and halfpace structure outer wall; The hierarchic structure middle part is provided with N type electrode metal alloy-layer (23) and the final N of formation type electrode through forming dielectric insulating film (16) and P type electrode isolation on the halfpace structure outer wall on N type electrode light penetrated bed ito thin film (191) hierarchic structure top;
Step 5, form nano fluorescent bisque (28) on substrate (1) surface.
2. according to the manufacture method of the said high light efficiency white light LEDs flip-chip of claim 1, it is characterized in that, step 1 comprise following specifically step by step:
Step 11, metal level (11) surface coated first photoresist layer (13);
First photoresist layer (13) of step 12, LED flip-chip periphery is removed through exposure or visualization way, and forms annular exposed region;
The N type of step 13, annular expose portion N type layer (3) removal of limiting layer (4), luminous zone layer (5), P type difference limiting layer (6), P type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11) and part respectively makes whole flip LED chips form the halfpace structure;
Step 14, first photoresist layer (13) of LED flip-chip intermediate rest is all removed.
3. according to the manufacture method of claim 1 or 2 said high light efficiency white light LEDs flip-chips, it is characterized in that, step 2 comprise following specifically step by step:
Step 21, at surface coated second photoresist layer (14) of step 14 gained flip-chip;
Step 22, structural part second photoresist layer of LED flip-chip halfpace (14) is removed through exposure or visualization way, and formed endless metal layer exposed region;
Step 23, the metal level (11) of expose portion and silicon dioxide layer (10) are removed, formed annular groove;
Step 24, remaining second photoresist layer of LED flip-chip (14) is all removed, finally formed annular N type electrode and form the district and form with cylindricality P type electrode and distinguish.
4. according to the manufacture method of the said high light efficiency white light LEDs flip-chip of claim 1, it is characterized in that, step 3 comprise following specifically step by step:
Step 301, at surface coated the 3rd photoresist layer (15) of step 24 gained LED flip-chip;
Step 302, removal part the 3rd photoresist layer (15) form halfpace outer wall exposed region and on halfpace, form annular exposed region;
Step 303, directly prepare one deck dielectric insulating film (16) on the surface of step 32 gained LED flip-chip;
Step 304, at surface coated the 4th photoresist layer (17) of step 32 gained LED flip-chip;
Step 305, removal part the 4th photoresist layer (17) only keep the 4th photoresist layer (17) that the halfpace outer wall vertical is coated with;
Step 306, remove SI semi-insulation deielectric-coating (16), only keep the dielectric insulating film (16) in the annular groove on dielectric insulating film (16) that the halfpace outer wall vertical arranges and the halfpace;
Step 307, all the 3rd photoresist layer (15) and the 4th photoresist layers (17) of removal residue;
Step 308, at surface coated the 5th photoresist layer (18) of step 37 gained LED flip-chip;
Step 309, the 5th photoresist layer (18) of annular groove top on the halfpace is removed, and formed annular dielectric insulating film exposed region;
Step 310, the annular dielectric insulating film (16) in the annular groove on the halfpace is removed fully;
Step 311, all the 5th photoresist layers (18) of removal residue.
5. according to the manufacture method of the said high light efficiency white light LEDs flip-chip of claim 1, it is characterized in that, step 4 comprise following specifically step by step:
Step 41, on the surface of step 311 gained LED flip-chip, form one deck light penetrated bed ito thin film (19);
Step 42, at surface coated the 6th photoresist layer (20) of step 41 gained LED flip-chip;
The 6th photoresist layer (20) at step 43, removal LED flip-chip halfpace top;
Step 44, at surface preparation one metal alloy layer (21) of step 43 gained LED flip-chip;
Step 45, add the 7th photoresist layer (22) on the surface of step 44 gained LED flip-chip;
The 7th photoresist layer (22) of step 46, removal part only keeps ring-type and square the 7th photoresist layer (22) at flip-chip halfpace top;
The metal alloy layer (21) that step 47, removal are not covered by the 7th photoresist layer (22) is also removed silicon dioxide layer (10), metal level (11) and the light penetrated bed ito thin film (19) between ring-type the 7th photoresist layer (22) and square the 7th photoresist layer (22) simultaneously; Light penetrated bed ito thin film (19) is divided into two independent parts: N type electrode light penetrated bed ito thin film (191) and P type electrode light penetrated bed ito thin film (192);
Step 48, remaining the 6th photoresist layer (20) and the 7th photoresist layer (22) are all removed, and formed cyclic n nitroso compound type electrode and a P type electrode, P type electrode is by cyclic n nitroso compound type electrodes surrounding.
6. according to the manufacture method of the said high light efficiency white light LEDs flip-chip of claim 1, it is characterized in that, step 5 comprise following specifically step by step:
Step 51, utilize ICP, RIE or other lithographic technique that substrate (1) is carried out etching to form a plurality of attachment hole (27);
Step 52, the nano-phosphor liquid that utilizes the glue spreading method handle to prepare are coated on substrate (1) surface equably; In 100-180 degree centigrade baking oven, toast then; Time is 10 minutes-1 hour, finally forms layer of even nano fluorescent bisque (28) on substrate (1) surface.
7. according to the manufacture method of any one said high light efficiency white light LEDs flip-chip in the claim 1 to 6; It is characterized in that; When removing silicon dioxide layer (10) between ring-type the 7th photoresist layer (22) and square the 7th photoresist layer (22), metal level (11) and light penetrated bed ito thin film (19) in the step 47; The P type electrode light penetrated bed ito thin film (192) that keeps is the trough of belt cube structure, and makes the silicon dioxide layer (10) and the metal level (11) of P type electrode below wrapped up fully by P type electrode light penetrated bed ito thin film (192).
8. according to the manufacture method of any one said high light efficiency white light LEDs flip-chip in the claim 1 to 7, it is characterized in that: in said substrate (1), form one or more layers male and fomale(M&F) (12).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489994A (en) * | 2013-10-15 | 2014-01-01 | 晶科电子（广州）有限公司 | High-adhesion and high-reliability white LED (light-emitting diode) chip |
| WO2014101798A1 (en) * | 2012-12-29 | 2014-07-03 | 映瑞光电科技(上海)有限公司 | Reversely-installed photonic crystal led chip and method for manufacturing same |
| CN106816519A (en) * | 2015-12-02 | 2017-06-09 | 佛山市国星半导体技术有限公司 | White light LEDs finished product and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060081869A1 (en) * | 2004-10-20 | 2006-04-20 | Chi-Wei Lu | Flip-chip electrode light-emitting element formed by multilayer coatings |
| JP2006278751A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | Garium nitride-based semiconductor light emitting element |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN102244087A (en) * | 2011-07-29 | 2011-11-16 | 贵州大学 | Controllable power flip array light emitting diode (LED) chip and manufacturing method thereof |
| US20120012889A1 (en) * | 2009-04-30 | 2012-01-19 | Showa Denko K.K. | Semiconductor light emitting element and method for producing semiconductor light emitting element |
-
2012
- 2012-02-01 CN CN 201210022507 patent/CN102544266B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060081869A1 (en) * | 2004-10-20 | 2006-04-20 | Chi-Wei Lu | Flip-chip electrode light-emitting element formed by multilayer coatings |
| JP2006278751A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | Garium nitride-based semiconductor light emitting element |
| US20120012889A1 (en) * | 2009-04-30 | 2012-01-19 | Showa Denko K.K. | Semiconductor light emitting element and method for producing semiconductor light emitting element |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN102244087A (en) * | 2011-07-29 | 2011-11-16 | 贵州大学 | Controllable power flip array light emitting diode (LED) chip and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014101798A1 (en) * | 2012-12-29 | 2014-07-03 | 映瑞光电科技(上海)有限公司 | Reversely-installed photonic crystal led chip and method for manufacturing same |
| US9601660B2 (en) | 2012-12-29 | 2017-03-21 | Enraytek Optoelectronics Co., Ltd. | Reversely-installed photonic crystal LED chip and method for manufacturing same |
| CN103489994A (en) * | 2013-10-15 | 2014-01-01 | 晶科电子（广州）有限公司 | High-adhesion and high-reliability white LED (light-emitting diode) chip |
| CN103489994B (en) * | 2013-10-15 | 2016-03-02 | 晶科电子（广州）有限公司 | A kind of strong cohesive property, high reliability White-light LED chip |
| CN106816519A (en) * | 2015-12-02 | 2017-06-09 | 佛山市国星半导体技术有限公司 | White light LEDs finished product and preparation method thereof |
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