CN203688742U - Semiconductor P and N type non-contact test sensor - Google Patents
Semiconductor P and N type non-contact test sensor Download PDFInfo
- Publication number
- CN203688742U CN203688742U CN201320837941.1U CN201320837941U CN203688742U CN 203688742 U CN203688742 U CN 203688742U CN 201320837941 U CN201320837941 U CN 201320837941U CN 203688742 U CN203688742 U CN 203688742U
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- semiconductor
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- induction electrode
- testing sensor
- charge induction
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Abstract
The utility model relates to a semiconductor P and N type non-contact test sensor The semiconductor P and N type non-contact test sensor comprises a shell, a charge induction electrode, an infrared excitation diode and an insulating locating piece, wherein the charge induction electrode is arranged inside the shell and used for inducting weak photogenerated charges generated on the surface of a semiconductor, the infrared excitation diode is used for emitting light and irradiating light to the surface of the semiconductor, and the charge induction electrode is arranged on the insulating locating piece. Insulating packing is sealed in the shell. The infrared excitation diode is utilized to excite the surface of the semiconductor to induce and generate the weak photogenerated charges, the charge induction electrode collects the photogenerated charges and generates corresponding voltage signals, and the P type and the N type of the semiconductor are discriminated. By the adoption of the infrared excitation diode, high accuracy can be still achieved with the induction distance being not larger than 0.15mm without directly making contact with the semiconductor.
Description
Technical field
The utility model relates to semiconductor test field, relates in particular to a kind of semiconductor P, N type non-contact testing sensor.
Background technology
Because semiconductor has the physical influence of doping property controllable conductivity characteristic, make it have the features such as thermal sensitivity, photosensitivity, magnetosensitive and electronics amplification, sudden change ability, therefore there is very high practical value at non-electricity measure information electronic technology, electron optics imaging technique, communication, solid information memory etc.
The semiconductor material of different electricity types has different charge carrier characteristics, also has different demands in application.The P of existing detection semiconductor material, N type are used contact cold-hot probe method mostly, very easily damage semiconductor material so that cause recessive defect.
Therefore, need the sensor of a kind of non-contacting measuring semiconductor P, N type badly.
Utility model content
The purpose of this utility model is to overcome the defect that prior art exists, and a kind of semiconductor P, N type non-contact testing sensor are provided.
The technical scheme that realizes the utility model object is: a kind of semiconductor P, N type non-contact testing sensor, comprise housing and be arranged at the following mechanism of described enclosure interior: electric charge induction electrode, on described electric charge induction electrode, offer light hole and be provided with a contact conductor, extend outside described housing described contact conductor one end, for gathering following photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode, described infrared excitation diode is arranged in described light hole and is provided with two infrared excitation diode leads, described infrared excitation diode lead welding end extends outside described housing, produces faint photogenerated charge for vitalizing semiconductor;
Insulation keeper, described electric charge induction electrode is arranged on described insulation keeper;
In described housing, be also sealed with insulating packing.
Further, described housing is hollow circular cylinder.
Further, described housing is stainless steel hollow circular cylinder.
Further, described electric charge induction electrode is circular.
Further, the light hole diameter of described electric charge induction electrode is 4～6mm.
Further, described insulation keeper is teflon right cylinder.
Further, described insulating packing is epoxy resin or silica gel.
Further, also comprise the ground lead being connected with described housing.
The utlity model has positive effect: the utility model utilizes infrared excitation diode vitalizing semiconductor surface to bring out and produces faint photogenerated charge, electric charge induction electrode collects photogenerated charge and generates corresponding voltage signal, be electron type charge carrier according to N-type semiconductor, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode generates a pulsation positive voltage signal, and P-type semiconductor is cavity type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode generates a pulsation negative voltage signal, thereby go out respectively semi-conductive P, N type, adopt infrared excitation diode to be no more than 0.15mm at distance of reaction and also can reach higher accuracy, do not need directly to contact with semiconductor.
Brief description of the drawings
For content of the present utility model is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail, wherein: Fig. 1 is structural representation of the present utility model below.
Wherein: 1, housing, 2, insulation keeper, 3, electric charge induction electrode, 4, infrared excitation diode, 5, insulating packing, 6, contact conductor, 7, infrared excitation diode lead, 8, ground lead.
Embodiment
As shown in Figure 1, the utility model the first preferred embodiment provides a kind of semiconductor P, N type non-contact testing sensor, comprises housing 1 and is arranged at the following mechanism of housing 1 inside:
Electric charge induction electrode 3, offers light hole (not shown) and is provided with a contact conductor 6 on electric charge induction electrode 3, extend outside housing 1 contact conductor 6 one end, for gathering photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode 4, infrared excitation diode 4 is arranged in light hole and is provided with two infrared excitation diode leads 7, and infrared excitation diode lead 7 welding ends extend outside housing 1, produce faint photogenerated charge for vitalizing semiconductor;
In housing 1, be also sealed with insulating packing 5.
The present embodiment utilizes the infrared excitation diode 4 vitalizing semiconductor surface of pulsing to bring out and produce faint photogenerated charge, electric charge induction electrode 3 collects photogenerated charge and generates corresponding voltage signal, be electron type charge carrier according to N-type semiconductor, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode 3 generates a pulsation positive voltage signal, and P-type semiconductor is cavity type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode 3 generates a pulsation negative voltage signal, thereby go out respectively semi-conductive P, N type, adopt infrared excitation diode 4 to be no more than 0.15mm at distance of reaction and also can reach higher accuracy, do not need directly to contact with semiconductor.
As the second preferred embodiment, all the other are identical with embodiment 1, difference is, the housing 1 that the present embodiment provides is stainless steel hollow circular cylinder, the rigidity of structure is good, electric charge induction electrode 3 is circular, the light hole diameter of electric charge induction electrode 3 is 4～6mm, the preferred 5mm of the present embodiment, insulation keeper 2 is teflon right cylinder, temperature coefficient is little, adapt to various temperature environments, insulating packing 5 is epoxy resin or silica gel, is specifically not construed as limiting, and the present embodiment also comprises the ground lead 8 being connected with housing 1.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (8)
1. a semiconductor P, N type non-contact testing sensor, it is characterized in that, comprise housing and be arranged at the following mechanism of described enclosure interior: electric charge induction electrode, on described electric charge induction electrode, offer light hole and be provided with a contact conductor, extend outside described housing described contact conductor one end, for gathering following photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode, described infrared excitation diode is arranged in described light hole and is provided with two infrared excitation diode leads, described infrared excitation diode lead welding end extends outside described housing, produces faint photogenerated charge for electrified light emitting vitalizing semiconductor;
Insulation keeper, described electric charge induction electrode is arranged on described insulation keeper;
In described housing, be also sealed with insulating packing.
2. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described housing is hollow circular cylinder.
3. semiconductor P according to claim 2, N type non-contact testing sensor, is characterized in that, described housing is stainless steel hollow circular cylinder.
4. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described electric charge induction electrode is circular.
5. semiconductor P according to claim 4, N type non-contact testing sensor, is characterized in that, the light hole diameter of described electric charge induction electrode is 4～6mm.
6. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described insulation keeper is teflon right cylinder.
7. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described insulating packing is epoxy resin or silica gel.
8. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, also comprises the ground lead being connected with described housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320837941.1U CN203688742U (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320837941.1U CN203688742U (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203688742U true CN203688742U (en) | 2014-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320837941.1U Expired - Fee Related CN203688742U (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203688742U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103675640A (en) * | 2013-12-19 | 2014-03-26 | 江苏瑞新科技股份有限公司 | Semiconductor P and N type non-contact test sensor |
-
2013
- 2013-12-19 CN CN201320837941.1U patent/CN203688742U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103675640A (en) * | 2013-12-19 | 2014-03-26 | 江苏瑞新科技股份有限公司 | Semiconductor P and N type non-contact test sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20181219 |
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| CF01 | Termination of patent right due to non-payment of annual fee |