CN203674241U - Device for improving diffusion sheet resistance uniformity of silicon wafer - Google Patents
Device for improving diffusion sheet resistance uniformity of silicon wafer Download PDFInfo
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- CN203674241U CN203674241U CN201320765360.1U CN201320765360U CN203674241U CN 203674241 U CN203674241 U CN 203674241U CN 201320765360 U CN201320765360 U CN 201320765360U CN 203674241 U CN203674241 U CN 203674241U
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- boat
- sheet resistance
- quartz
- silicon wafer
- silicon chip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a device for improving diffusion sheet resistance uniformity of a silicon wafer. The device includes an air inlet device, a quartz tube, a waste discharging tube, an flow equalizing plate and a quartz boat. The air inlet device is disposed on the quartz tube. The bottom of the quartz tube is provided with the waste discharging tube. The flow equalizing plate is arranged above the waste discharging tube. The right side of the even flowing plate is provided with the quartz boat. The device reduces the sheet resistance gradient in the sheet of the silicon wafer, and improves the uniformity in the sheet of the sheet resistance. By improving the sheet resistance uniformity of the silicon wafer after diffusion, a contact resistance generated after printing and sintering is reduced, and the efficiency of the battery piece is improved.
Description
Technical field
The utility model relates to a kind of silica-based solar cell of light field, specifically a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes.
Background technology
Solar cell, also claims photovoltaic cell, is the semiconductor device that a kind of luminous energy of solar energy is converted into electric energy.Because he is green environment-friendly products, can not cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy that has wide development prospect.
Along with improving constantly of diffused sheet resistance, the uniformity of existing boiler tube diffusion way is very poor, can not meet current product line demand.Common diffusing quartz boat is that silicon chip and boiler tube charge air flow direction are 90 ° of angles, the sheet resistance trend that this diffusion way presents is high in the middle of being, edge is low, along with the continuous rising of diffused sheet resistance, the difference of center sheet resistance and edge sheet resistance is increasing, so the utility model proposes, always promote diffused sheet resistance uniformity by changing silicon chip diffused sheet.
Utility model content
Utility model object: for the problems referred to above, the purpose of this utility model is to provide a kind of simple in structure, and working stability is reliable, effectively improves inhomogeneity air inlet boiler tube in resistance sheet.
Technical scheme: a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes described in the utility model, it comprises: inlet duct, quartz ampoule, waste pipe, even flow plate and quartz boat, on described quartz ampoule, be installed with inlet duct, the bottom of quartz ampoule is provided with waste pipe, the top of waste pipe is provided with even flow plate, and the right part of even flow plate is provided with quartz boat;
Described quartz boat is made up of boat tooth, boat plate and boat bottom bar, and boat plate is installed on boat bottom bar by the boat tooth being provided with boat bottom bar.
Described inlet duct is provided with air inlet.
Described even flow plate is provided with hole.
One end of described waste pipe is waste discharge arrival end, and the other end of waste pipe is connected with waste discharge apparatus.
Beneficial effect: a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes described in the utility model, compared with prior art, has the following advantages:
(1) in sheet, sheet resistance gradient reduces: reduce sheet resistance gradient in silicon chip sheet, improve the interior uniformity of sheet of diffused sheet resistance;
(2) improve the contact resistance after printing: spread the afterwards uniformity of silicon chip sheet resistance by improvements, reduce the size of contact resistance after printing-sintering, thus lifting cell piece efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the cutaway view of air inlet quartz boat;
Fig. 3 is the left view of air inlet quartz boat.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, should understand these embodiment and only be not used in restriction scope of the present utility model for the utility model is described, after having read the utility model, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present utility model.
The utility model provides a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes, and it comprises: inlet duct 1, quartz ampoule 2, waste pipe 3, cloud stream plate 4 and quartz boat 5.
On quartz ampoule 2, be installed with inlet duct 1, the bottom of quartz ampoule 2 is provided with waste pipe 3, and the top of waste pipe 3 is provided with cloud stream plate 4, and the right part of even flow plate 4 is provided with quartz boat 5; Described quartz boat 5 is made up of boat tooth 51, boat plate 52 and boat bottom bar 53, boat plate 52 is installed on boat bottom bar 53 by the boat tooth 51 being provided with boat bottom bar 53, described inlet duct 1 is provided with air inlet 11, described even flow plate 4 is provided with hole 41, one end of described waste pipe 3 is waste discharge arrival end 31, and the other end of waste pipe 3 is connected with waste discharge apparatus.
After inlet duct 1 starts, air-flow enters quartz ampoule 2 from air inlet 11, and be provided with hole 41 through even flow plate 4, the silicon chip and the charge air flow direction that are provided with due to quartz boat 5 are 180 °, thereby make the sheet resistance gradient in silicon chip diffused sheet resistance sheet, improve uniformity in sheet resistance sheet, therefore, air-flow enters waste pipe 3 and discharges from waste discharge apparatus from air inlet 11.
Claims (4)
1. one kind promotes the inhomogeneity device of silicon chip diffused sheet resistance, it is characterized in that: it comprises: inlet duct (1), quartz ampoule (2), waste pipe (3), even flow plate (4) and quartz boat (5), on described quartz ampoule (2), be installed with inlet duct (1), the bottom of quartz ampoule (2) is provided with waste pipe (3), the top of waste pipe (3) is provided with even flow plate (4), and the right part of even flow plate (4) is provided with quartz boat (5);
Described quartz boat (5) is made up of boat tooth (51), boat plate (52) and boat bottom bar (53), boat plate (52) by and the boat tooth (51) that is provided with of boat bottom bar (53) be installed on boat bottom bar (53).
2. a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes according to claim 1, is characterized in that: described inlet duct (1) is provided with air inlet (11).
3. a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes according to claim 1, is characterized in that: described even flow plate (4) is provided with hole (41).
4. a kind of inhomogeneity device of silicon chip diffused sheet resistance that promotes according to claim 1, is characterized in that: one end of described waste pipe (3) is waste discharge arrival end (31), and the other end of waste pipe (3) is connected with waste discharge apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320765360.1U CN203674241U (en) | 2013-11-29 | 2013-11-29 | Device for improving diffusion sheet resistance uniformity of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320765360.1U CN203674241U (en) | 2013-11-29 | 2013-11-29 | Device for improving diffusion sheet resistance uniformity of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674241U true CN203674241U (en) | 2014-06-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320765360.1U Expired - Fee Related CN203674241U (en) | 2013-11-29 | 2013-11-29 | Device for improving diffusion sheet resistance uniformity of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203674241U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435740A (en) * | 2016-11-11 | 2017-02-22 | 桂林电子科技大学 | Vertical solar silicon slice diffusion furnace |
| CN113644163A (en) * | 2021-08-06 | 2021-11-12 | 横店集团东磁股份有限公司 | Silicon wafer sheet resistance uniform diffusion device, assembling method and renovating method thereof |
-
2013
- 2013-11-29 CN CN201320765360.1U patent/CN203674241U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435740A (en) * | 2016-11-11 | 2017-02-22 | 桂林电子科技大学 | Vertical solar silicon slice diffusion furnace |
| CN113644163A (en) * | 2021-08-06 | 2021-11-12 | 横店集团东磁股份有限公司 | Silicon wafer sheet resistance uniform diffusion device, assembling method and renovating method thereof |
| CN113644163B (en) * | 2021-08-06 | 2023-07-14 | 横店集团东磁股份有限公司 | Silicon wafer sheet resistance uniform diffusion device, assembly method and renovation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20181129 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |