CN204668282U - A kind of high-temperature low-pressure disperser - Google Patents
A kind of high-temperature low-pressure disperser Download PDFInfo
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- CN204668282U CN204668282U CN201520313986.8U CN201520313986U CN204668282U CN 204668282 U CN204668282 U CN 204668282U CN 201520313986 U CN201520313986 U CN 201520313986U CN 204668282 U CN204668282 U CN 204668282U
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- pressure disperser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of high-temperature low-pressure disperser, comprise diffusion furnace and vacuum pump, in described diffusion furnace, be provided with the quartz boat, the heating region that load silicon chip, pass into the air inlet pipe of diffusion gas and discharge the blast pipe of DIFFUSION TREATMENT tail gas; Described diffusion furnace and vacuum pump pass to mutually and make to be in low-pressure state in diffusion furnace.Adopt the utility model, can improve sheet resistance uniformity in the stability of sheet resistance between silicon chip and sheet, reduce production cost, speed production efficiency, improves the photoelectric conversion efficiency of battery simultaneously.
Description
Technical field
The utility model relates to silicon chip of solar cell process equipment neighborhood, particularly relates to a kind of high-temperature low-pressure disperser.
Background technology
Solar cell is a kind of effective absorption solar radiant energy and utilizes photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, electronics flows to N district by P district, just forms electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has 6 procedures, is respectively making herbs into wool, diffusion, dephosphorization silex glass and back of the body knot, plated film, silk screen printing, sintering.Wherein diffusing procedure is the core component PN junction forming battery at front side of silicon wafer.Under the irradiation of sunlight, PN junction both sides form electrical potential difference, just form electric current after connecting circuit.
What current industry adopted is normal pressure tubular type diffusion way, and silicon chip reacts with oxygen and phosphorus oxychloride gas in the environment of constant-pressure and high-temperature, and the elemental phosphorous of generation forms thin N-type silicon layer at high temperature to silicon chip diffusion inside, and then forms PN junction.But normal pressure tubular type diffusion way, lack of homogeneity in the stability of silicon chip sheet resistance and sheet, affects the raising of solar cell photoelectric conversion efficiency.In scale of mass production, the photoelectric conversion efficiency distribution of battery is wide, and the distribution proportion of efficiency battery is too high.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of high-temperature low-pressure disperser, can improve sheet resistance uniformity in the stability of sheet resistance between silicon chip and sheet, and reduce production cost, speed production efficiency, improves the photoelectric conversion efficiency of battery simultaneously.
In order to solve the problems of the technologies described above, the utility model provides a kind of high-temperature low-pressure disperser, comprise diffusion furnace and vacuum pump, in described diffusion furnace, be provided with the quartz boat, the heating region that load silicon chip, pass into the air inlet pipe of diffusion gas and discharge the blast pipe of DIFFUSION TREATMENT tail gas; Described diffusion furnace and vacuum pump pass to mutually and make to be in low-pressure state in diffusion furnace.
As the improvement of such scheme, the pipeline connecting described diffusion furnace and vacuum pump is connected to vacuum gauge.
As the improvement of such scheme, described diffusion furnace is tubular diffusion furnace.
As the improvement of such scheme, described heating region have some radiant elements.
As the improvement of such scheme, the operating temperature range of described heating region is 400 ~ 1300 DEG C.
As the improvement of such scheme, described air inlet pipe extends to furnace interior from the side of diffusion furnace and is positioned at above quartz boat, and described air inlet pipe is provided with venthole.
As the improvement of such scheme, described blast pipe extends to furnace interior from the side of diffusion furnace and is positioned at below quartz boat, and described blast pipe is provided with air admission hole.
Implement the utility model, there is following beneficial effect:
Disperser described in the utility model, by the connection of diffusion furnace and vacuum pump, makes diffusion technology carry out under the condition of high-temperature low-pressure.The diffusion rate passing into the mist molecule in diffusion furnace is fast, and therefore also corresponding shortening diffusion time, can improve production capacity and production efficiency, be easy to scale of mass production.Meanwhile, because diffusion time shortens, gas usage, also far below prior art, significantly can reduce production cost.
On the other hand, in a low voltage state, gas molecule not only diffusion rate is fast, and the uniformity of gas is better.Uniformity due to gas will be much better than the diffusion way of common constant-pressure and high-temperature, silicon chip carries out chemical reaction in uniform process gas, form uniform PN junction at silicon chip surface, thus reach improve sheet resistance between silicon chip stability and sheet in the object of sheet resistance uniformity.The subsequent technique that between high sheet, sheet resistance uniformity can make diffusion technology make with battery well matches, and improves the average light photoelectric transformation efficiency of battery, reduces the distribution proportion of efficiency battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model high-temperature low-pressure disperser.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
Composition graphs 1, the utility model provides a kind of high-temperature low-pressure disperser, comprise diffusion furnace 1 and vacuum pump 2, in described diffusion furnace 1, be provided with the quartz boat 3, the heating region 5 that load silicon chip 4, pass into the air inlet pipe 6 of diffusion gas and discharge the blast pipe 7 of DIFFUSION TREATMENT tail gas; Described diffusion furnace 1 and vacuum pump 2 pass to mutually and make to be in low-pressure state in diffusion furnace 1.
Preferably, diffusion furnace 1 described in the utility model is tubular diffusion furnace.
It is carry out under the condition of constant-pressure and high-temperature that prior art prepares silicon chip of solar cell, but the PN junction formed is uneven, and in sheet, the fluctuation of sheet resistance is comparatively large, affects the raising of solar cell photoelectric conversion efficiency.For this reason, the utility model is by improving the equipment of existing diffusion technology, a kind of disperser of high-temperature low-pressure is provided, be connected with diffusion furnace 1 by vacuum pump 2, before passing into mist, open vacuum pump 2, the gas extracted in diffusion furnace 1 makes the pressure in diffusion furnace 1 remain on 0.001 ~ 0.5 atmospheric pressure.Under the environment of low-voltage high-temperature, the diffusion rate of mist molecule is fast, and can evenly be full of diffusion furnace 1, the uniformity of gas will be much better than the diffusion way of common constant-pressure and high-temperature.Silicon chip carries out chemical reaction in uniform process gas, will form uniform PN junction at silicon chip surface, thus reach improve sheet resistance between silicon chip stability and sheet in the object of sheet resistance uniformity.
The pipeline that in disperser described in the utility model, diffusion furnace 1 is connected with vacuum pump 2 is provided with the vacuum gauge 8 for measuring vacuum degree in diffusion furnace 1, and this vacuum gauge 8 personnel on site that is convenient to operation monitors situation in stove.
In addition, for ensureing to be in the condition of high temperature in diffusion furnace 1, disperser described in the utility model is provided with several radiant elements (SiC) in diffusion furnace 1, and this radiant element to be located on furnace bottom or/furnace wall thus to be formed the heating region 5 of diffusion furnace 1.It should be noted that, the working temperature of this heating region 5 is 400 ~ 1300 DEG C, can ensure that silicon chip 4 arrives diffusion technology temperature when heating region 5.
Preferably, described air inlet pipe 6 extends to furnace interior from the side of diffusion furnace 1 and is positioned at above quartz boat 3, air inlet pipe 6 offers the venthole 61 flowed out vertically downward for diffusion gas.Described blast pipe 7 extends to furnace interior from the side of diffusion furnace 1 and is positioned at below quartz boat 3, offers vertically upward for the air admission hole 71 that tail gas flows into.Above-mentioned pipe design, diffusion mist can be made to enter after in diffusion furnace 1, still keep the direction flowing along being parallel to silicon chip 4 surface, cannot can not contact with the silicon chip 4 of internal layer because of outer field blocking of silicon chip 4, mist can flow in the space between silicon chip 4, be evenly distributed on silicon chip 4 surface, be conducive to forming uniform PN junction.
To sum up, disperser described in the utility model, by the connection of diffusion furnace 1 with vacuum pump 2, makes diffusion technology carry out under the condition of high-temperature low-pressure.The diffusion rate passing into the mist molecule in diffusion furnace 1 is fast, and therefore also corresponding shortening diffusion time, can improve production capacity and production efficiency, be easy to scale of mass production.Meanwhile, because diffusion time shortens, gas usage, also far below prior art, significantly can reduce production cost.
On the other hand, in a low voltage state, gas molecule not only diffusion rate is fast, and the uniformity of gas is better.Uniformity due to gas will be much better than the diffusion way of common constant-pressure and high-temperature, silicon chip carries out chemical reaction in uniform process gas, form uniform PN junction at silicon chip surface, thus reach improve sheet resistance between silicon chip stability and sheet in the object of sheet resistance uniformity.The subsequent technique that between high sheet, sheet resistance uniformity can make diffusion technology make with battery well matches, and improves the average light photoelectric transformation efficiency of battery, reduces the distribution proportion of efficiency battery.
Above disclosedly be only a kind of preferred embodiment of the utility model, certainly can not limit the interest field of the utility model with this, therefore according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.
Claims (7)
1. a high-temperature low-pressure disperser, is characterized in that, comprises diffusion furnace and vacuum pump, is provided with the quartz boat, the heating region that load silicon chip in described diffusion furnace, passes into the air inlet pipe of diffusion gas and discharges the blast pipe of DIFFUSION TREATMENT tail gas; Described diffusion furnace and vacuum pump pass to mutually and make to be in low-pressure state in diffusion furnace.
2. high-temperature low-pressure disperser as claimed in claim 1, is characterized in that, the pipeline connecting described diffusion furnace and vacuum pump is connected to vacuum gauge.
3. high-temperature low-pressure disperser as claimed in claim 1, it is characterized in that, described diffusion furnace is tubular diffusion furnace.
4. high-temperature low-pressure disperser as claimed in claim 1, is characterized in that described heating region has some radiant elements.
5. high-temperature low-pressure disperser as claimed in claim 1, it is characterized in that, the operating temperature range of described heating region is 400 ~ 1300 DEG C.
6. high-temperature low-pressure disperser as claimed in claim 1, it is characterized in that, described air inlet pipe extends to furnace interior from the side of diffusion furnace and is positioned at above quartz boat, and described air inlet pipe is provided with venthole.
7. high-temperature low-pressure disperser as claimed in claim 6, it is characterized in that, described blast pipe extends to furnace interior from the side of diffusion furnace and is positioned at below quartz boat, and described blast pipe is provided with air admission hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520313986.8U CN204668282U (en) | 2015-05-15 | 2015-05-15 | A kind of high-temperature low-pressure disperser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520313986.8U CN204668282U (en) | 2015-05-15 | 2015-05-15 | A kind of high-temperature low-pressure disperser |
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| Publication Number | Publication Date |
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| CN204668282U true CN204668282U (en) | 2015-09-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105483831A (en) * | 2015-12-04 | 2016-04-13 | 湖南红太阳光电科技有限公司 | Two-grade sealing apparatus used for reduced pressure diffusion systems |
| CN105908260A (en) * | 2016-05-18 | 2016-08-31 | 广东爱康太阳能科技有限公司 | Diffusion furnace for crystalline silicon solar cells |
| CN106158710A (en) * | 2016-08-26 | 2016-11-23 | 温州市赛拉弗能源有限公司 | A kind of High temperature diffusion equipment |
| CN109309142A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of blunt preceding liquid source diffusion technique of silicon wafer glass |
-
2015
- 2015-05-15 CN CN201520313986.8U patent/CN204668282U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105483831A (en) * | 2015-12-04 | 2016-04-13 | 湖南红太阳光电科技有限公司 | Two-grade sealing apparatus used for reduced pressure diffusion systems |
| CN105483831B (en) * | 2015-12-04 | 2017-12-12 | 湖南红太阳光电科技有限公司 | For depressurizing the two stage sealing device of diffusion system |
| CN105908260A (en) * | 2016-05-18 | 2016-08-31 | 广东爱康太阳能科技有限公司 | Diffusion furnace for crystalline silicon solar cells |
| CN106158710A (en) * | 2016-08-26 | 2016-11-23 | 温州市赛拉弗能源有限公司 | A kind of High temperature diffusion equipment |
| CN106158710B (en) * | 2016-08-26 | 2019-01-08 | 温州市赛拉弗能源有限公司 | A kind of High temperature diffusion equipment |
| CN109309142A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of blunt preceding liquid source diffusion technique of silicon wafer glass |
| CN109309142B (en) * | 2017-07-26 | 2021-09-07 | 天津环鑫科技发展有限公司 | Liquid source diffusion process before silicon wafer glass passivation |
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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee after: Guangdong Asahi Polytron Technologies Inc Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: Guangdong Aiko Solar Energy Technology Co., Ltd. |