CN203536475U - Magnetic sensor and magnetic sensor device - Google Patents

Magnetic sensor and magnetic sensor device Download PDF

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Publication number
CN203536475U
CN203536475U CN201320665569.0U CN201320665569U CN203536475U CN 203536475 U CN203536475 U CN 203536475U CN 201320665569 U CN201320665569 U CN 201320665569U CN 203536475 U CN203536475 U CN 203536475U
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mentioned
magnetic sensor
island
terminal
small pieces
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CN201320665569.0U
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福中敏昭
长谷川秀则
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Asahi Kasei Microdevices Corp
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Asahi Kasei EMD Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

Provided is a magnetic sensor and a magnetic sensor device. In a thin type small piece, leakage current can be prevented from increasing in the case that current flows reversely, and the leakage current can also be prevented from increasing even reverse installation. The magnetic sensor is equipped with a lead frame (10) which is equipped with an island (11) and a plurality of lead terminals (12-15) equipped around the island (11), a small piece (20) which is installed on the island (11) through a bonding layer, and a plurality of thin metal wires which allow a plurality of electrode parts (23a-23d) mounted on the small piece (20) to be electrically connected with the plurality of the lead terminals (12-15). The lead terminal (12) is an island terminal electrically connected with the island (11). Furthermore, the bonding layer is a bonding layer (130) of an insulating paste (30) or a mold piece contact film (150), and the insulating paste (30) allows the island (11) to be insulated from the small piece (20).

Description

Magnetic Sensor and magnet sensor arrangement
Technical field
The utility model relates to a kind of Magnetic Sensor, particularly relate to a kind of in the situation that in the small pieces of slimming electric current reverse flow cross the Magnetic Sensor that also can prevent that leakage current from increasing.
Background technology
As the Magnetic Sensor that has utilized Hall effect, the known Hall IC that has Hall element, detection magnetic the output digit signals of detection magnetic (magnetic field) the analog signal that is in proportion with it of output for example.For example patent documentation 1 disclose possess lead frame, the Magnetic Sensor of small pieces (being magnetic sensor chip) and metal fine.In this Magnetic Sensor, lead frame has in order to obtain and outside being electrically connected to and being configured in the terminal of four jiaos, and small pieces are loaded into the island of lead frame.And each terminal that the electrode that small pieces have has with lead frame is connected by metal fine.
Patent documentation 1: TOHKEMY 2007-95788 communique
Utility model content
The problem that utility model will solve
In addition, in the disclosed Magnetic Sensor of patent documentation 1, the terminal (hereinafter referred to as earth terminal) in the lead terminal of four jiaos, that be connected to earthing potential that is configured in that also lead frame can be had forms as one with island.Thus, the current potential on island becomes earthing potential, can prevent that electric charge from lodging in island, produces noise in the time of therefore can being suppressed at Magnetic Sensor detection magnetic.
In addition, in recent years, be accompanied by the miniaturization etc. of electronic equipment and small-sized, the slimming of Magnetic Sensor are also developed.For example, the size after the encapsulation of Magnetic Sensor (being package dimension) has realized vertical 1.6mm, wide 0.8mm, thickness 0.38mm.In addition, by further making small pieces attenuation can also make the thickness of package dimension become 0.30mm.
At this, when small-sized, the slimming of Magnetic Sensor are improved as described above, when Magnetic Sensor being arranged on to circuit board or socket etc., in the situation that overlooking, misunderstand Magnetic Sensor towards possibility uprise.For example, shown in 8 of figure (a), in the situation that Magnetic Sensor 300 being correctly installed on to circuit board 400, the earth terminal 311 of lead frame is connected with the earthy wiring 411 of circuit board 400, and the power supply terminal 313 of lead frame is connected with wiring 413 with the power supply of circuit board 400.But, when Magnetic Sensor 300 is as described above during miniaturization, be with the naked eye difficult to (for example, A, B, C, D) such as words, symbol that identification is printed on package surface, be difficult to according to these symbols etc. judge Magnetic Sensor 300 towards.Its result, causes like that Magnetic Sensor 300 being oppositely installed shown in (b) of Fig. 8 for example and earth terminal 311 and power supply 413 is connected, power supply terminal 313 is uprised with the possibility that earthy wiring 411 is connected with connecting up.
In addition, suppose in the situation that by Magnetic Sensor 300 reverse installation as shown in Fig. 8 (b), from earth terminal 311 to power supply terminal 313, (reverse) flows through electric current, but can between other lead terminal 312,314, measure potential difference.In addition, island 315 is fixed as power supply potential, accumulates in island 315 electric charge and remains fixed amount, therefore also can suppress to produce noise.Therefore,, in the situation that Magnetic Sensor 300 has oppositely been installed, its action should can not produce large problem yet.
Yet inventor of the present utility model finds ought Magnetic Sensor 300 be oppositely installed and makes the out-of-date electric leakage rheology of electric current reverse flow large (the first problem).In addition, find to be disposed at thinner this leakage current of small pieces larger (the second problem) on island 315.
Therefore, the utility model is made in view of first, second problem that inventor of the present utility model finds as described above, and its object is to provide a kind of also can prevent the Magnetic Sensor of the increase of leakage current in the situation that electric current reverse flow is crossed the Magnetic Sensor of slimming.
For the scheme of dealing with problems
Inventor of the present utility model investigates as follows to producing the reason (mechanism) of above-mentioned first, second problem.
(a) of Fig. 9 and the concept map that (b) means the mechanism of the leakage current increase that inventor of the present utility model investigates.At (a) of Fig. 9 and in the Magnetic Sensor 300 (b), small pieces 320 are arranged on lead frame 310 island 315 via silver (Ag) cream 340.In addition, lead frame 310 has lead terminal (being island terminal) 311 and the power supply terminal 313 separated with island 315 becoming one with island 315.As shown in Fig. 9 (a), in the situation that Magnetic Sensor 300 being correctly arranged on to circuit board or socket etc., island terminal 311 becomes earth terminal.In addition, the composition surface of small pieces 320 and Ag cream 340 become semiconductor (for example, GaAs) with the schottky junction of metal (Ag).
In the situation that shown in Fig. 9 (a), to this schottky junction, apply reverse bias, so electric current does not flow through island 315 from small pieces 320.From power supply terminal 313, active layer 321, the metal fine 352 by metal fine 351, small pieces 320 flows to island terminal 311 to electric current.
On the other hand, in the situation of Magnetic Sensor 300 oppositely being installed as (b) be shown in of Fig. 9, island terminal 311 becomes power supply terminal, and power supply terminal 313 becomes earth terminal.In this case, in the schottky junction of small pieces 320 and Ag cream 340, apply forward biasing.
At this, the semiconductor that forms small pieces 320 (for example, GaAs) is half insulation (≈ ultra-high resistance), even if therefore apply to schottky junction the current flowing hardly of forward setovering also when small pieces 320 are thick.Yet when making small pieces 320 attenuation, the reduction of resistance value and its thickness reduces pro rata.Therefore, be accompanied by the slimming of small pieces 320, the easy forward current flowing to schottky junction.Be that easy leakage current is with the such path flow mistake of terminal 311 → island, island 315 → Ag cream, 340 → small pieces, 320 → metal fine, 351 → power supply terminal 313.
Investigation based on above, as the method that solves first, second problem, inventor of the present utility model proposes to replace Ag cream in the Magnetic Sensor with island terminal and uses insulation adhesive linkage.
< Magnetic Sensor >
That is, the related Magnetic Sensor of a kind of mode of the present utility model is characterised in that to possess: lead frame, a plurality of lead terminals that it has island and is configured in the surrounding on this island; Small pieces, it is arranged on above-mentioned island via adhesive linkage; And a plurality of wires, its a plurality of electrode parts that above-mentioned small pieces are had are electrically connected to respectively with above-mentioned a plurality of lead terminals, wherein, above-mentioned a plurality of lead terminals comprise and are connected electrically in above-mentioned Dao island terminal, and above-mentioned adhesive linkage is to make the insulation adhesive linkage that insulate between above-mentioned island and above-mentioned small pieces.At this, " small pieces " are magnetic sensor chips, for example, can enumerate Hall element or Hall IC.
In addition, in above-mentioned Magnetic Sensor, can be also to it is characterized in that above-mentioned insulation adhesive linkage comprises thermohardening type resin as its composition.
In addition, in above-mentioned Magnetic Sensor, can be also to it is characterized in that above-mentioned insulation adhesive linkage also comprises ultraviolet curing resin as its composition.
In addition, in above-mentioned Magnetic Sensor, can be also, more than it is characterized in that the thickness between the part between above-mentioned island and above-mentioned small pieces in above-mentioned insulation adhesive linkage is at least 2 μ m.
In addition, in above-mentioned Magnetic Sensor, can be also, the thickness that it is characterized in that above-mentioned small pieces be below 0.12mm.
In addition, in above-mentioned Magnetic Sensor, can be also to it is characterized in that above-mentioned lead terminal possesses: above-mentioned island terminal; The first lead terminal, itself and above-mentioned island terminal are opposite to clamp the mode on above-mentioned island; The second lead terminal; And the 3rd lead terminal, itself and above-mentioned the second lead terminal are opposite to clamp the mode on above-mentioned island.
In addition, in above-mentioned Magnetic Sensor, can be also, it is characterized in that above-mentioned island terminal ground connection, above-mentioned the first lead terminal be connected with power supply, and above-mentioned the second lead terminal is connected with lead-out terminal with above-mentioned the 3rd lead terminal.
The related magnet sensor arrangement of a kind of mode of the present utility model is characterised in that to possess: above-mentioned Magnetic Sensor; And printed base plate, wherein, the ground terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor.
The related magnet sensor arrangement of a kind of mode of the present utility model is characterised in that to possess: above-mentioned Magnetic Sensor; And printed base plate, wherein, the ground terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor.
The manufacture method > of < Magnetic Sensor
The manufacture method of the Magnetic Sensor that alternate manner of the present utility model is related is characterised in that to possess following operation: there is island and be configured in this island surrounding a plurality of lead terminals lead frame, via adhesive linkage, small pieces are installed on above-mentioned island; And a plurality of electrode parts that above-mentioned small pieces had with a plurality of wires are electrically connected to respectively with above-mentioned a plurality of lead terminals, wherein, above-mentioned a plurality of lead terminal comprises the island terminal being electrically connected to above-mentioned island, and in the operation of above-mentioned small pieces is installed, by the use adhesive linkage that insulate, as above-mentioned adhesive linkage, make to insulate between above-mentioned island and above-mentioned small pieces.
In addition, in the manufacture method of above-mentioned Magnetic Sensor, also can be to it is characterized in that before the operation of above-mentioned Magnetic Sensor is installed, also possessing following operation: at the face of opposition side of putting face substrate, that there is each above-mentioned electrode part of a plurality of above-mentioned small pieces into, paste matrix contact membrane; To having pasted the aforesaid substrate of above-mentioned matrix contact membrane, cut, will put a plurality of above-mentioned small pieces singualtion of this substrate into; And the above-mentioned small pieces of singualtion are separated from above-mentioned matrix contact membrane, wherein, by above-mentioned small pieces from the operation of above-mentioned matrix contact membrane separation, from the base material of this matrix contact membrane, the adhesive linkage of insulating properties is peeled off together with above-mentioned small pieces, in the operation of above-mentioned Magnetic Sensor is installed, use the above-mentioned adhesive linkage of peeling off from above-mentioned base material as above-mentioned insulation adhesive linkage.
The effect of utility model
According to a mode of the present utility model, between island and small pieces, by insulation adhesive linkage, insulate, therefore can prevent from forming schottky junction between island (metal) and small pieces (semiconductor), can prevent that electric current from flowing through along forward (from the metal to semi-conductive direction) of this schottky junction.Thus, in the situation that in the small pieces of slimming electric current reverse flow cross the increase that also can prevent leakage current.
Accompanying drawing explanation
(a) of Fig. 1, (b) and (c) mean the figure of the structure example of the Magnetic Sensor 100 that the first execution mode of the present utility model is related.
(a) of Fig. 2, (b), (c), (d) and (e) be according to process sequence, to represent the figure of the manufacture method of Magnetic Sensor 100.
Fig. 3 is for the figure of the effect of the first execution mode is described.
Fig. 4 schematically shows offset voltage Vu with respect to the figure of the effect of the deviation reduction of input voltage vin.
(a) of Fig. 5, (b) and (c) mean the figure of the structure example of the Magnetic Sensor 200 that the second execution mode of the present utility model is related.
(a) of Fig. 6, (b), (c), (d) and (e) mean the figure of the manufacture method of the related Magnetic Sensor of the second execution mode 200.
Fig. 7 is the figure comparing as the situation of insulation adhesive linkage using the situation of using insulating paste 30 as insulation adhesive linkage, with the adhesive linkage 130 that uses matrix contact membrane 150.
(a) of Fig. 8 and (b) be for the figure of problem is described.
(a) of Fig. 9 and (b) be the figure investigating producing the reason of problem.
Description of reference numerals
10: lead frame; 11: island; 12: island terminal (lead terminal being connected with island); 13～15: lead terminal; 20: small pieces; 21:GaAs substrate; 22: active layer; 23a～23d: electrode; 30: insulating paste; 41～44: metal fine; 50: moulding resin; 100: Magnetic Sensor; 110: leadframe substrate; 130: adhesive linkage; 140: film substrate; 150: matrix contact membrane; 160: semiconductor wafer; 170: blade; 180: push rod; 190: chuck; 200: Magnetic Sensor; 210: platform.
Embodiment
Below use accompanying drawing that execution mode of the present utility model is described.In addition, in each figure of following explanation, also sometimes to thering is the additional identical mark of part of same structure, omit its repeat specification.
< the first execution mode >
(structure)
(a) of Fig. 1～(c) mean sectional view, vertical view and the outside drawing of the structure example of the Magnetic Sensor 100 that the first execution mode of the present utility model is related.(a) of Fig. 1 represents with dotted line A-A ', Fig. 1 (b) to be cut off the cross section obtaining.In addition, in (b) of Fig. 1, for fear of the complicated of accompanying drawing, omit and represent moulding resin.
As shown in Fig. 1 (a)～(c), Magnetic Sensor 100 possesses lead frame 10, small pieces (being magnetic sensor chip) 20, insulating paste 30, a plurality of metal fine 41～44 and moulding resin 50.
Lead frame 10 has for loading small pieces 20 island 11 and for obtaining and the outside a plurality of lead terminals 12～15 that are electrically connected to.As shown in Fig. 1 (b), lead terminal 12～15 is configured near surrounding's (for example,, four of Magnetic Sensor 100 jiaos) on island 11.In addition, lead terminal 12Yu island 11 becomes one, and is electrically connected to island 11.Below this lead terminal 12 is called to island terminal.
In the present embodiment, following mode preferably: as lead terminal, possess island terminal 12, to clamp mode and opposed first lead terminal 14 of island terminal on island 11, the second lead terminal 15, and to clamp mode and opposed the 3rd lead terminal 13 of the second lead terminal 15 on island 11.
Lead frame 10 forms such as the metal by copper (Cu) etc.In addition, also can be by a part of etching (etching partially) at the face side of lead frame 10 or the back side.
Small pieces 20 are for example Hall elements, via insulating paste 30, are arranged on lead frame 10 island 11.Small pieces 20 have for example GaAs of half insulation (GaAs) substrate 21, the active layer (being induction part) 22 consisting of the semiconductive thin film being formed on this GaAs substrate 21 and the electrode 23a～23d being electrically connected to active layer 22.Active layer 22 is for example cross (intersection) type when overlooking, and in four top ends of intersecting, is respectively arranged with electrode 23a～23d.While overlooking, relative pair of electrodes 23a, 23c is that in the direction of the line of connecting electrode 23a, 23c and quadrature when overlooking, relative another pair of electrodes 23b, 23d is for the lead-out terminal from hall element output voltage for making electric current flow through the input terminal of Hall element.The thickness of small pieces 20 is for example below 0.12mm.
Insulating paste 30 for example comprises the thermohardening type resin of epoxy system as its composition, comprises silicon dioxide (SiO2) as filler.In the first embodiment, the back side of the surface binded small pieces 20 by this insulating paste 30Lai island 11 (that is the face of opposition side, with the face of active layer 22) and be fixed.In addition, by this insulating paste 30, make insulation between small pieces 20Yu island 11.The thickness of the insulating paste 30 between small pieces 20Yu island 11 is decided by filler sizes, for example, be more than 5 μ m.
Metal fine 41～44th, the wire that the electrode that small pieces 20 are had 23a～23dYu island terminal 12 or lead terminal 13～15 are electrically connected to respectively, for example, consist of gold (Au).As shown in Fig. 1 (b), metal fine 41Jiang island terminal 12 is connected with electrode 23a, metal fine 42 is connected lead terminal 13 with electrode 23b.In addition, metal fine 43 by lead terminal 14 be connected with electrode 23c, metal fine 44 is connected lead terminal 15 with electrode 23d.
At least face side that moulding resin 50 covers small pieces 20, metal fine 41～44 and lead frame 10 is protected.The thermohardening type resin that moulding resin 50 by epoxy is for example forms, the high temperature in the time of can resistance toly refluxing.
(action)
The Magnetic Sensor 100 of stating in the use detects in the situation in magnetic (magnetic field), lead terminal 14 is connected with positive potential (+) and island terminal 12 is connected with earthing potential (GND), and electric current flows through from lead terminal 14Xiang island terminal 12.And, the potential difference V1-V2 (=hall output voltage VH) that measurement lead terminal is 13,15.According to the size of hall output voltage VH, detect the size in magnetic field, according to hall output voltage VH positive and negative detect magnetic field towards.
(manufacture method)
(a) of Fig. 2～(e) is according to process sequence, to represent the vertical view of the manufacture method of Magnetic Sensor 100.In addition,, in Fig. 2 (a)～(e), omit the diagram of the width of blade (being width of slit) of cutting.As shown in Fig. 2 (a), first prepare leadframe substrate 110.This leadframe substrate 110 is that the lead frame 10 shown in 1 (b) of figure while overlooking longitudinally and is laterally connecting a plurality of substrates.
Then,, as shown in Fig. 2 (b), on leadframe substrate 110Ge island 11, apply insulating paste 30.At this, the coating condition (for example, the scope of coating, the thickness of coating etc.) of adjusting insulating paste 30 makes to produce gap or avoid island 11 to contact with small pieces 20 between Magnetic Sensor 100Zhong island 11 after completing and small pieces 20.
Then,, as shown in 2 of figure (c), on insulating paste 30 island 11, configure small pieces 20 and (carry out matrix joint having applied.)。And, after joint, heat-treat (solidifying (cure)) insulating paste 30 is solidified.
Then, as shown in Fig. 2 (d), one end of metal fine 41～44 is connected with island terminal 12 or lead terminal 13～15 respectively, the other end of metal fine 41～44 is connected with electrode 23a～23d respectively and (carries out wire-bonded.)。
And, as shown in Fig. 2 (e), at least face side of small pieces 20, metal fine 41～44 and lead frame 10 is covered to protect with moulding resin 50 and (carry out resin-sealed.)。After resin-sealed, on the surface of moulding resin 50 such as putting on (not shown) such as marks.And, for example along two pecked lines, make blade relatively move to cut off moulding resin 50 with respect to leadframe substrate 110 and leadframe substrate 110 (cuts.)。Via above operation, complete the Magnetic Sensor 100 shown in Fig. 1 (a)～(c).
In this first execution mode, insulating paste 30 is corresponding with " insulation adhesive linkage " of the present utility model, and metal fine 41～44 is corresponding with " a plurality of wire " of the present utility model.
(effect of the first execution mode)
The first execution mode of the present utility model plays following effect.
(1) between island 11 and small pieces 20, for example, by insulation adhesive linkage (, insulating paste 30), insulate.Thus, can prevent from forming schottky junction between island 11 (metal) and small pieces 20 (semiconductor), can prevent that electric current from flowing through along forward (from the metal to semi-conductive direction) of this schottky junction.Example as shown in Figure 3, also can prevent that electric current from 11 flowing through to small pieces 20 from island in the situation that electric current and originally oppositely (being the direction of island terminal 12 → metal fine 41 → electrode 23a → active layer 22 → electrode 23c → metal fine 43 → lead terminal 14) are flow through.Therefore, in the situation that the Magnetic Sensor of slimming 100 is oppositely installed and is made electric current oppositely flow through the increase that also can prevent leakage current.
; in the situation that the Magnetic Sensor of present embodiment is arranged on to printed base plate, form magnet sensor arrangement, 1) mode, 2 that the ground terminal of printed base plate is connected with the island terminal of Magnetic Sensor, the power supply terminal of printed base plate is connected with the first lead terminal of Magnetic Sensor) the ground terminal of printed base plate is connected with the first lead terminal of Magnetic Sensor, the power supply terminal of printed base plate all can be suppressed to the increase of leakage current with the mode that the island terminal of Magnetic Sensor is connected.
When small-sized, the slimming of Magnetic Sensor are developed, in the situation that Magnetic Sensor being installed to circuit board or socket etc., while overlooking, misunderstand Magnetic Sensor towards possibility uprise, even but in this case, according to present embodiment, also can eliminate leakage current and increase such problem and can use.
Fig. 4 schematically shows offset voltage Vu with respect to the figure of the effect of the deviation reduction of input voltage vin.The transverse axis of Fig. 4 represents the input voltage vin to Magnetic Sensor, the offset voltage Vu that the longitudinal axis represents Magnetic Sensor.Input voltage vin is the potential difference between the input terminal of Magnetic Sensor.Just (+) of Vin is the situation that direction that the first lead terminal to electric current from Magnetic Sensor flows through to island terminal has applied voltage, and negative (-) is the situation of voltage that applied to electric current and the direction originally oppositely flowing through.In addition, offset voltage Vu is the potential difference between the lead-out terminal not having under the environment of magnetic.Ideal situation is that the size of offset voltage Vu and input voltage vin independently becomes zero (0).
In the installation of small pieces, used in the structure of Ag cream, at input voltage, schottky junction has been become to forward biasing electric current for negative (-) in the situation that and flow through to small pieces from island.The electric current forward flowing through to schottky junction when by small pieces slimming becomes large, and therefore as represented in the dotted line with Fig. 4, the deviation of offset voltage Vu becomes large.On the other hand, in the structure illustrating in the first execution mode of the present utility model (that is, having used the structure of insulation adhesive linkage in the installation of small pieces), between island and small pieces, insulate, even therefore by small pieces slimming, can current flowing between island and small pieces yet.Therefore,, in the Magnetic Sensor of slimming, in the situation that input voltage is made as to negative (-), also as shown in the solid line of Fig. 4, the deviation of offset voltage Vu is little.Like this, used the structure of insulation adhesive linkage to compare with having used the structure of Ag cream, the deviation of the offset voltage in the time of can reducing input voltage for negative (-).
(2) in addition, can prevent the increase of leakage current, therefore can advance the further slimming of small pieces 20.Therefore, can contribute to more small-sized, the slimming of Magnetic Sensor 100.
(3) in addition, can prevent the increase of leakage current, therefore can suppress the increase of power consumption.
(4) the thermohardening type resin that in addition, insulation adhesive linkage comprises the system of epoxy is for example as its composition.
Therefore, after engaging, matrix small pieces 20 can be easily fixed on island 11 by being cured.
(5) in addition, more than the thickness between the part between small pieces 20Yu island 11 in insulation adhesive linkage is preferably and at least guarantees 2 μ m.According to the utility model people's opinion, if more than above-mentioned thickness is at least 2 μ m, can improves the reliability of the insulation between small pieces 20Yu island 11 and prevent from forming schottky junction.
(variation)
In the first above-mentioned execution mode, small pieces 20 can not be also Hall element but Hall IC.Even if this structure also plays effect (1)～(5) of the first execution mode.
< the second execution mode >
In the first above-mentioned execution mode, to using insulating paste 30 as the situation of the insulation adhesive linkage of insulation between small pieces 20Yu island 11 is illustrated.Yet, in the utility model, as long as insulation adhesive linkage possesses insulating properties and cementability, be not limited to insulating paste 30.As insulation adhesive linkage, as the mode of sheet, for example, also can use the adhesive linkage of matrix contact membrane (cutting, matrix engage one-piece type film).This point is described in the second execution mode.
(structure)
(a) of Fig. 5～(c) mean sectional view, vertical view and the outside drawing of the structure example of the Magnetic Sensor 200 that the second execution mode of the present utility model is related.(a) of Fig. 5 represents with dotted line B-B ', Fig. 5 (b) to be cut off the cross section obtaining.In addition, in (b) of Fig. 5, for fear of the complicated of accompanying drawing, omit and represent moulding resin 50.
As shown in Fig. 5 (a)～(c), Magnetic Sensor 200 possesses adhesive linkage 130, a plurality of metal fine 41～44 and the moulding resin 50 of lead frame 10, small pieces 20, insulating properties.
Adhesive linkage 130 for example preferably comprises thermohardening type resin, ultraviolet ray (UV) gel-type resin and the binder resin of epoxy system as its composition.
In the second execution mode, the back side of the surface binded small pieces 20 by this adhesive linkage 130 island 11 (face of opposition side with the face of active layer 22) is fixed.In addition, by this adhesive linkage 130, make insulation between small pieces 20Yu island 11.More than the thickness of the adhesive linkage 130 between small pieces 20Yu island 11 is for example preferably 2 μ m and below 30 μ m.More than being more preferably 10 μ m and below 20 μ m.
In addition, the structure beyond the adhesive linkage 130 of Magnetic Sensor 200 is with for example the Magnetic Sensor 100 of explanation is identical in the first embodiment.In addition, the action of Magnetic Sensor 200 is also identical with Magnetic Sensor 100.
(manufacture method)
(a) of Fig. 6～(e) is according to process sequence, to represent the sectional view of the manufacture method of the Magnetic Sensor 200 that the second execution mode of the present utility model is related.
As shown in Fig. 6 (a), first prepare matrix contact membrane 150.The adhesive linkage 130 that matrix contact membrane 150 has film substrate 140 and is configured in the insulating properties on a face of film substrate 140.The adhesive linkage 130 that makes this matrix contact membrane 150 contacts and carries out bonding (carrying out wafer installation) with the back side (face of opposition side with the face of active layer 22) of putting the semiconductor wafer 160 of a plurality of small pieces 20 into.
In addition, in this second execution mode, also can adjust the processing of bonding force of adhesive linkage 130 to maintain small pieces 20 and the bonding of film substrate 140 and easily peel off adhesive linkage 130 from film substrate 140 in the operation of Fig. 6 (c) by adhesive linkage 130 in the operation of (b) at Fig. 6 described later.The processing of this adjustment bonding force is carried out in timing or the timing before and after it of carrying out wafer installation.For example, also can carry out wafer via platform, matrix contact membrane 150 heat to improve while installing one of composition as adhesive linkage 130 binder resin composition bonding force and to further securely the direction of bonding semiconductor wafer 160 and adhesive linkage 130 adjust.In addition, also can be after having carried out wafer installation, from the opposition side of the face with adhesive linkage 130 of matrix contact membrane 150 to this matrix contact membrane 150, irradiate UV the UV gel-type resin composition of one of composition as adhesive linkage 130 is solidified, by solidifying to cutting, become and be easy to reduce film substrate 140 when direction and matrix engage and adjust with the direction of the bonding force of adhesive linkage 130.By carrying out via the heating of platform and at least one in UV irradiation, can or adjust by a little curing direction that reduces its bonding force to the bonding force of raising adhesive linkage 130 as described above.
Then, as shown in Fig. 6 (b), for example, with blade 170, carry out cutting semiconductor chip 160, will put a plurality of small pieces 20 singualtion of semiconductor wafer 160 into.At this, be not only semiconductor wafer 160, cut together with also with adhesive linkage 130.
Then,, as shown in Fig. 6 (c), with the push rod 180 of needle-like, come the back side of jack-up small pieces 20 and with the surface of chuck 190 absorption small pieces 20, lift (picking up).In addition, the adhesive linkage 130 of matrix contact membrane 150 to the direction that reduces its bonding force, adjusts in advance by least one for example heating as described above in irradiating with UV.Therefore,, in picking up the operation of small pieces 20, adhesive linkage 130 is peeled off from film substrate 140 to be bonded in the state at the back side of small pieces 20.
Then,, as shown in Fig. 6 (d), the rear side of small pieces 20 is arranged on leadframe substrate 110 island 11 via adhesive linkage 130.At this, by with predefined load, small pieces 20Xiang island 11 sides being pressed, by small pieces 20 island 11 that is adhesively fixed.In addition, when this is installed, also can heat lead frame 10 and adhesive linkage 130 via platform 210.Sometimes can also be by heating to improve the bonding force on small pieces 20Yu island 11 except load.After this is installed, implement heat treatment (solidifying), the thermal effect type resinous principle that makes epoxy resin is cured and further obtains enough adhesive strengths.Operation after this is identical with the first execution mode.That is, as shown in Fig. 6 (e), carry out wire-bonded, carry out afterwards resin-sealed.And, cutting moulding resin 50 and leadframe substrate 110.Via this operation, complete the Magnetic Sensor 200 shown in Fig. 5 (a)～(c).
In this second execution mode, semiconductor wafer 160 is corresponding with " substrate " of the present utility model.In addition, adhesive linkage 130 is corresponding with " insulation adhesive linkage " of the present utility model, film substrate 140 is corresponding with " base material " of the present utility model.Other corresponding relation is identical with the first execution mode.
(effect of the second execution mode)
The second execution mode of the present utility model also plays following effect except the effect of effect (1)～(5) of the first execution mode.
(1) as insulation adhesive linkage bonding and that insulate will be carried out between small pieces 20Yu island 11, use the adhesive linkage 130 of matrix contact membrane 150.Thus, do not need, to a plurality of small pieces 20 (or island 11 each) coating insulating paste 30 respectively, therefore can contribute to the reduction of process number.
(2) in addition, adhesive linkage 130 for example comprises binder resin, UV gel-type resin as its composition.Therefore, by heat-treating to improve the bonding force of adhesive linkage 130, can adjust with the direction of adhesive linkage 130 to bonding semiconductor wafer 160 more firmly, in addition can be to become easy direction and reduce film substrate 140 and adjust with the direction of the bonding force of adhesive linkage 130 of cutting by carrying out that UV irradiates.Thus, in the operation of picking up small pieces 20, can easily together with small pieces 20, adhesive linkage 130 be peeled off from film substrate 140.
Therefore (3) in addition, the viscosity of adhesive linkage 130 is high, compares with using the situation of insulating paste 30, can do one's utmost to reduce in the side of small pieces 20 to vertical spread.Thus, tool has the following advantages: can not producing resin, to be attached to the surface of small pieces 20 this bad, and the thickness of adhesive linkage 130 can attenuation yet and can be made even thickness in addition.
(4) in addition, in the situation that using as shown in Figure 7 adhesive linkage 130, tool has the following advantages: about its maintaining requirement, be not freezing but can refrigerate keeping.In refrigeration keeping in the situation that, tool has the following advantages: thawing of the adhesive linkage that do not need to insulate, while needing, can directly use.And about process conditions, also having does not need the management of coating amount, infiltrates the advantages such as deviation little, little to vertical spread, thickness is little.
(variation)
In the second execution mode, can apply the variation of explanation in the first embodiment.Be that small pieces 20 can not be also Hall element but Hall IC.Even this structure, effect (1)～(4) of also playing the second execution mode except effect (1)～(5) of the first execution mode.
Other > of <
The utility model is not limited to above each recorded execution mode.The changes that can be designed each execution mode according to practitioner's knowledge etc., the mode of this change etc. is also contained in scope of the present utility model in addition.

Claims (9)

1. a Magnetic Sensor, is characterized in that, possesses:
Lead frame, a plurality of lead terminals that it has island and is configured in the surrounding on this island;
Small pieces, it is arranged on above-mentioned island via adhesive linkage; And
A plurality of wires, its a plurality of electrode parts that above-mentioned small pieces are had are electrically connected to respectively with above-mentioned a plurality of lead terminals,
Wherein, above-mentioned a plurality of lead terminals comprise and are connected electrically in above-mentioned Dao island terminal, and above-mentioned adhesive linkage is to make the insulation adhesive linkage that insulate between above-mentioned island and above-mentioned small pieces.
2. Magnetic Sensor according to claim 1, is characterized in that,
More than the thickness between the part between above-mentioned island and above-mentioned small pieces in above-mentioned insulation adhesive linkage is at least 2 μ m.
3. Magnetic Sensor according to claim 1, is characterized in that,
The thickness of above-mentioned small pieces is below 0.12mm.
4. according to the Magnetic Sensor described in any one in claim 1～3, it is characterized in that,
Above-mentioned lead terminal possesses:
Above-mentioned island terminal;
The first lead terminal, itself and above-mentioned island terminal are opposite to clamp the mode on above-mentioned island;
The second lead terminal; And
The 3rd lead terminal, itself and above-mentioned the second lead terminal are opposite to clamp the mode on above-mentioned island.
5. Magnetic Sensor according to claim 4, is characterized in that,
Above-mentioned island terminal ground connection,
Above-mentioned the first lead terminal is connected with power supply,
Above-mentioned the second lead terminal is connected with lead-out terminal with above-mentioned the 3rd lead terminal.
6. a magnet sensor arrangement, is characterized in that, possesses:
Magnetic Sensor according to claim 4; And
Printed base plate,
Wherein, the ground terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor.
7. a magnet sensor arrangement, is characterized in that, possesses:
Magnetic Sensor according to claim 5; And
Printed base plate,
Wherein, the ground terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor.
8. a magnet sensor arrangement, is characterized in that, possesses:
Magnetic Sensor according to claim 4; And
Printed base plate,
Wherein, the ground terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor.
9. a magnet sensor arrangement, is characterized in that, possesses:
Magnetic Sensor according to claim 5; And
Printed base plate,
Wherein, the ground terminal of above-mentioned printed base plate is connected with above-mentioned first lead terminal of above-mentioned Magnetic Sensor, and the power supply terminal of above-mentioned printed base plate is connected with the above-mentioned island terminal of above-mentioned Magnetic Sensor.
CN201320665569.0U 2012-10-26 2013-10-25 Magnetic sensor and magnetic sensor device Expired - Lifetime CN203536475U (en)

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