CN203474963U - Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer - Google Patents
Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer Download PDFInfo
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- CN203474963U CN203474963U CN201320397113.0U CN201320397113U CN203474963U CN 203474963 U CN203474963 U CN 203474963U CN 201320397113 U CN201320397113 U CN 201320397113U CN 203474963 U CN203474963 U CN 203474963U
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- silicon carbide
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- epitaxial wafer
- carbide epitaxial
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Abstract
Description
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1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | Homogeneity | mean | Standard deviation |
Tradition | 7.86 | 7.81 | 7.8 | 7.75 | 7.74 | 7.68 | 7.65 | 7.57 | 7.5 | 7.41 | 2.95% | 7.677 | 0.145 |
Embodiment 1 | 7.87 | 7.86 | 7.84 | 7.81 | 7.79 | 7.76 | 7.71 | 7.7 | 7.69 | 7.69 | 1.16% | 7.772 | 0.072 |
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7.88 | 7.87 | 7.84 | 7.82 | 7.78 | 7.75 | 7.69 | 7.67 | 7.66 | 7.66 | 1.42% | 7.762 | 0.088 |
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CN201320397113.0U CN203474963U (en) | 2013-07-04 | 2013-07-04 | Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer |
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CN201320397113.0U CN203474963U (en) | 2013-07-04 | 2013-07-04 | Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer |
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CN203474963U true CN203474963U (en) | 2014-03-12 |
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CN201320397113.0U Expired - Lifetime CN203474963U (en) | 2013-07-04 | 2013-07-04 | Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103603048A (en) * | 2013-07-04 | 2014-02-26 | 国家电网公司 | Chemical vapor deposition equipment used for producing silicon carbide epitaxial wafer |
CN104386698A (en) * | 2014-11-06 | 2015-03-04 | 清华大学 | Fluidized bed chemical vapor deposition preparation method of silicon carbide nanowire |
CN104818527A (en) * | 2015-04-08 | 2015-08-05 | 上海晶盟硅材料有限公司 | Epitaxial wafer production equipment |
CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电(浙江)有限公司 | Reactor of metal organic chemical vapor deposition equipment |
CN113078050A (en) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | C-surface SiC epitaxial structure and filling method of epitaxial groove |
CN115537768A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide chemical vapor deposition method and multi-heat-source horizontal wall heating type reactor |
CN115613139A (en) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | Chemical vapor deposition reactor and method for epitaxially growing silicon carbide film |
-
2013
- 2013-07-04 CN CN201320397113.0U patent/CN203474963U/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103603048A (en) * | 2013-07-04 | 2014-02-26 | 国家电网公司 | Chemical vapor deposition equipment used for producing silicon carbide epitaxial wafer |
CN104386698A (en) * | 2014-11-06 | 2015-03-04 | 清华大学 | Fluidized bed chemical vapor deposition preparation method of silicon carbide nanowire |
CN104818527A (en) * | 2015-04-08 | 2015-08-05 | 上海晶盟硅材料有限公司 | Epitaxial wafer production equipment |
CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电(浙江)有限公司 | Reactor of metal organic chemical vapor deposition equipment |
CN113078050A (en) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | C-surface SiC epitaxial structure and filling method of epitaxial groove |
CN113078050B (en) * | 2021-03-30 | 2023-03-10 | 安徽长飞先进半导体有限公司 | C-surface SiC epitaxial structure and filling method of epitaxial groove |
CN115537768A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide chemical vapor deposition method and multi-heat-source horizontal wall heating type reactor |
CN115613139A (en) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | Chemical vapor deposition reactor and method for epitaxially growing silicon carbide film |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee after: State Grid Corporation of China Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: STATE GRID SMART GRID Research Institute Patentee before: State Grid Corporation of China |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171031 Address after: 102211 Beijing city Changping District future science and Technology City Binhe Road No. 18 Co-patentee after: State Grid Corporation of China Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Co-patentee after: STATE GRID ZHEJIANG ELECTRIC POWER Co. Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Patentee before: State Grid Corporation of China |
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TR01 | Transfer of patent right | ||
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Granted publication date: 20140312 |
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CX01 | Expiry of patent term |