CN203445122U - X-ray detection device array substrate - Google Patents
X-ray detection device array substrate Download PDFInfo
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- CN203445122U CN203445122U CN201320556216.7U CN201320556216U CN203445122U CN 203445122 U CN203445122 U CN 203445122U CN 201320556216 U CN201320556216 U CN 201320556216U CN 203445122 U CN203445122 U CN 203445122U
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Abstract
The embodiment of the utility model discloses an X-ray detection device array substrate comprising a thin film transistor and a photoelectric diode sensing device which is connected with the thin film transistor. The thin film transistor comprises a grid electrode, a grid electrode insulating layer, an active layer, a source electrode and a drain electrode. Secondary electron sending layers are arranged above and below the active layer of the thin film transistor so that a micro channel structure is formed, higher carrier mobility is obtained by the active layer, performance of the thin film transistor is enhanced and sensitivity of an X-ray detection device is enhanced. Besides, the X-ray detection device array substrate disclosed by the embodiment of the utility model adopts a flexible underlay so that the X-ray detection device has advantages of being light and thin, simple and convenient to install, low in power consumption, convenient to carry, durable, etc.
Description
Technical field
The utility model relates to photoelectric detection technology field, particularly relates to a kind of X-ray detector array base palte.
Background technology
X-ray detection device is all widely used in measurement medical science, electronics industry, aerospace industry and other field.X-ray detection device is by being converted into visible ray by X ray, photodiode receives light and by photovoltaic effect, light signal is converted to the signal of telecommunication, the signal of telecommunication passes through the switch control inputs of thin-film transistor in the control circuit of x-ray detection device, thereby realizes measuring ability.
The cross-sectional view of x-ray detection device array base palte in prior art, as shown in Figure 1, array base palte comprises a plurality of pixel regions, each pixel region comprises thin-film transistor 200 and photodiode 300.Concrete structure is: underlay substrate 100, on underlay substrate, be provided with grid layer, and grid layer comprises the grid 201 of grid line (not shown) and the thin-film transistor being connected with grid line; On grid layer, be provided with gate insulator 202; Active layer 203 is set on gate insulator 202; On active layer 203, ohmic contact layer 204 can also be set; On active layer 203 and ohmic contact layer 204, source-drain electrode layer is set, this layer comprises source electrode 2051 and the drain electrode 2052 of thin-film transistor, wherein source electrode 2051 is connected with holding wire 3062, drain electrode 2052 is connected with photodiode 300, this layer also comprises reflecting part 2053, and reflecting part 2053 is arranged on the lower zone of photodiode.On source-drain electrode layer, be provided with the first passivation layer 206, the first passivation layers and be provided with opening in reflecting part 2053 regions.Reflecting part 2053 regions are provided with photodiode 300, and reflecting part 2053 is connected with photodiode 300 by the opening of the first passivation layer, and the drain electrode 2052 of film crystal light is connected with photodiode 300.Photodiode 300 comprises PIN knot, comprises p type semiconductor layer 301, I type semiconductor layer 302 and n type semiconductor layer 303; On PIN knot, be provided with the first conductive membrane layer that comprises the first electrode 304; The second passivation layer 305, the second passivation layers 305 are set on the first conductive membrane layer and are formed with the first via hole 3051 and the second via hole 3052; On the second passivation layer 305, be that the second conductive membrane layer 306, the second conductive membrane layers 306 comprise bias electrode 3061 and holding wire 3062, bias electrode 3061 is connected with the first electrode 304 by the first via hole 3051; Holding wire 3062 is connected with the source electrode 2051 of thin-film transistor by the second via hole 3052.At thin-film transistor 200 and photodiode 300 peripheries, be also provided with peripheral passivation layer 307, for the protection of thin-film transistor and photodiode.
X-ray detection device operation principle as shown in Figure 2, when X ray 120 impact fluorescence powder 110, the visible ray that sees through fluorescent material 110 is incident to the photodiode 300 of x-ray detection device array base palte, due to photovoltaic effect, light signal is converted to the signal of telecommunication, and the signal of telecommunication inputs to the control circuit of x-ray detection device by the switch of thin-film transistor 300.
In prior art, as shown in Figure 3, concrete steps comprise the manufacturing process flow of x-ray detection device array base palte:
101: on underlay substrate, form grid layer, by composition technique formation for the first time, comprise the figure of grid;
102: on the substrate of completing steps 101, form gate insulator, on gate insulator, form active layer, by the figure of the active layer of composition technique formation for the second time;
103: on the substrate of completing steps 102, form source-drain electrode layer, by composition technique formation for the third time, comprise the figure of source electrode, drain electrode and reflecting part;
104: on the substrate of completing steps 103, form the first passivation layer, by the 4th composition technique formation, comprise the figure of the first passivation layer of peristome;
105: on the substrate of completing steps 104, form n type semiconductor layer, I type semiconductor layer and p type semiconductor layer, by the figure of semiconductor portions in the 5th composition technique formation photodiode;
106: on the substrate of completing steps 105, form the first conductive membrane layer, by the 6th composition technique, form the figure that comprises the first electrode;
107: the substrate at completing steps 106 forms the second passivation layer, by the 7th composition technique, form the figure that comprises the first via hole and the second via hole;
108: the substrate at completing steps 107 forms the second conductive membrane layer, by the 8th composition technique, form the figure of the second conductive membrane layer that comprises bias electrode and holding wire;
109: the substrate at completing steps 108 forms peripheral passivation layer, by the 9th composition technique, form the figure of peripheral passivation layer.
The active layer of the thin-film transistor of existing x-ray detection device array base palte adopts amorphous silicon material, and amorphous silicon membrane carrier mobility is lower, causes the sensitivity of x-ray detection device low, cannot meet high-sensitivity detection requirement.
Utility model content
The utility model provides a kind of x-ray detection device array base palte, in order to solve the low technical problem of x-ray detection device sensitivity in prior art.
X-ray detection device array base palte in the utility model, comprise thin-film transistor and the photodiode being connected with thin-film transistor, described thin-film transistor comprises grid, gate insulator, active layer and source electrode, drain electrode, under described active layer, be provided with the first secondary electron emission layer, on described active layer, be provided with the second secondary electron emission layer.
Wherein, the material of described the first secondary electron emission layer and the second secondary electron emission layer is metal oxide, preferential oxidation magnesium or beryllium oxide.
Wherein, the thickness of described the first secondary electron emission layer and the second secondary electron emission layer is
Wherein, the material of described active layer is semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material.
Wherein, the thickness of described active layer is
Described array base palte comprises underlay substrate, described thin-film transistor and described photodiode are arranged on described underlay substrate, described underlay substrate is flexible material, and described flexible material is polyethylene, PETG, polyvinyl alcohol or polyimides.
The material of the described grid of described array base palte is heavy metal or heavy metal alloy, preferably copper, lead or Pot metal, or molybdenum and molybdenum alloy; The material of described gate insulator is dielectric resin material; The material of described source electrode and described drain electrode is conductor carbon nano-tube material or conductor grapheme material.
The described photodiode of described array base palte is PIN type photodiode, described PIN type photodiode comprises p type semiconductor layer, I type semiconductor layer and n type semiconductor layer, and described p type semiconductor layer, I type semiconductor layer and n type semiconductor layer adopt semiconductor carbon nanometer tube material; Described photodiode also comprises passivation layer and bias electrode, and the material of described passivation layer is dielectric resin material, and the material of described bias electrode comprises conductor carbon nano-tube material.
Described thin-film transistor and described photodiode periphery are provided with peripheral passivation layer, and the material of described peripheral passivation layer is insulating resin.
The utility model provides a kind of x-ray detection device array base palte, comprise thin-film transistor and the photodiode being connected with thin-film transistor, by the first secondary electron emission layer is set under the active layer of thin-film transistor, the second secondary electron emission layer is set on described active layer, form Micro Channel Architecture, utilize electron multiplication principle, make active layer obtain higher carrier mobility, thereby improved the performance of thin-film transistor, promoted the sensitivity of x-ray detection device.Meanwhile, x-ray detection device array base palte that the utility model provides adopts flexible substrate, makes x-ray detection device have frivolous, simple installation, the advantage such as low in energy consumption, easy to carry, durable in use.For fear of flexible array substrate, through repeatedly bending and the folding rete be full of cracks problem that may occur, in the x-ray detection device array base palte that the utility model provides, each rete has adopted the material of the bending resistance folding endurance excellences such as carbon nano-tube, Graphene, insulating resin.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing to embodiment is briefly described, apparently, the accompanying drawing in the following describes only relates to embodiment more of the present utility model, but not to restriction of the present utility model.
Fig. 1 is prior art x-ray detection device array base palte part section structural representation;
Fig. 2 is that prior art x-ray detection device detects principle schematic;
Fig. 3 is prior art x-ray detection device array base palte manufacturing process flow diagram;
The x-ray detection device array base palte part section structural representation that Fig. 4 provides for the utility model embodiment;
The x-ray detection device array base palte manufacturing process flow diagram that Fig. 5 provides for the utility model embodiment;
Array base palte part section structural representation in the x-ray detection device array base palte manufacturing process flow key step that Fig. 6 A～6F provides for the utility model embodiment.
Description of reference numerals:
Prior art Reference numeral:
100 glass substrate; 200 thin-film transistors; 201 grids; 202 gate insulators; 203 active layers; 204 ohmic contact layers; 2051 source electrodes; 2052 drain electrodes; 2053 reflecting parts; 206 first passivation layers; 300 photodiodes; 301P type semiconductor layer; 302I type semiconductor layer; 303N type semiconductor layer; 304 first electrodes; 305 second passivation layers; 3051 first via holes; 3052 second via holes; 306 second conductive membrane layers; 3061 bias electrodes; 3062 holding wires; 307 peripheral passivation layers
The utility model Reference numeral:
400 flexible substrate; 500 thin-film transistors; 501 grids; 502 gate insulators; 503 first secondary electron emission layers; 504 active layers; 505 second secondary electron emission layers; 5051 reflecting parts; 5061 source electrodes; 5062 drain electrodes; 600 photodiodes; 601P type semiconductor layer; 602I type semiconductor layer; 603N type semiconductor layer; 604 first electrodes; 605 passivation layers; 6051 first via holes; 6052 second via holes; 606 second conductive membrane layers, 6061 bias electrodes; 6062 holding wires; 607 peripheral passivation layers
Embodiment
For making object, technical scheme and the advantage of the utility model embodiment clearer, below in conjunction with the accompanying drawing of the utility model embodiment, the technical scheme of the utility model embodiment is clearly and completely described.Obviously, described embodiment is a part of embodiment of the present utility model, rather than whole embodiment.Based on described embodiment of the present utility model, the every other embodiment that those of ordinary skills obtain under the prerequisite without creative work, belongs to the scope that the utility model is protected.
Unless otherwise defined, technical term used herein or scientific terminology should be and in field, have the ordinary meaning that the personage of general technical ability understands under the utility model." first " of using in the utility model patent application specification and claims, " second " and similar word do not represent any order, quantity or importance, and are just used for distinguishing different parts.Equally, the similar words such as " ", " " or " being somebody's turn to do " do not represent restricted number yet, and mean and have at least one." comprise " or " comprising " etc. similarly word mean to occur that element before this word or object are contained appears at element or the object that this word enumerates below and be equal to, and do not get rid of other elements or object." connection " or " being connected " etc. similarly word be not defined in connection physics or machinery, but can comprise electrical connection, no matter be directly or indirectly." on ", D score, " left side ", " right side " etc. are only for representing relative position relation, after being described the absolute position of object and changing, this relative position relation also may correspondingly change.
The utility model provides a kind of x-ray detection device array base palte, in order to solve the technical problems such as in prior art, x-ray detection device sensitivity is low, use is inconvenient.
As shown in Figure 4, a kind of x-ray detection device array base palte that the utility model embodiment provides comprises thin-film transistor 500 and the photodiode 600 being connected with thin-film transistor.Described thin-film transistor comprises grid 501, gate insulator 502, active layer 504 and source electrode 5061, drains 5062, under the active layer 504 of described thin-film transistor, be provided with the first secondary electron emission layer 503, on active layer 504, be provided with the second secondary electron emission layer 505.For convenience of describing, the first secondary electron emission layer 503 and the second secondary electron emission layer 505 can be referred to as secondary electron emission layer.Secondary electron emission layer adopts metal oxide, as magnesium oxide, beryllium oxide etc.Active layer adopts the semi-conducting materials such as semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material.The thickness of secondary electron emission layer is
the thickness of active layer is
The active layer secondary electron emission layer setting up and down of the thin-film transistor of the x-ray detection device array base palte that the utility model provides, form Micro Channel Architecture, utilize electron multiplication principle, make active layer obtain higher carrier mobility, thereby improved the performance of thin-film transistor, promoted the sensitivity of x-ray detection device.The operation principle of microchannel is to have utilized electron multiplication principle, when primary electron enters as Zhong Yu microchannel, the microchannel film generation secondary electron that bumps, under electric field action in microchannel, obtain one along channel axis to acceleration, simultaneously, the secondary electron being inspired moves ahead with parabolical track, when the electronics being inspired is with larger energy impact film, the electronics that these multiplications produce can produce multiplier effect by shock again, thereby quantitatively obtains new multiplication.The length of microchannel can reach tens times of aperture, thereby, the process that primary electron penetrates from inciding Nei Daocong microchannel, the microchannel port of export, during this period electronics through repeatedly with the collision of vias inner walls, due to multiplier effect, produced a large amount of secondary electrons, the electron amount while making outgoing has obtained multiplication.The active layer secondary electron emission layer setting up and down of thin-film transistor, secondary electron emission layer has larger secondary electron yield, charge carrier in active layer (free electron) is during with certain energy impact secondary electron emission layer, produced more charge carrier (free electron), make active layer obtain higher carrier mobility, thereby improved the performance of thin-film transistor, promoted the sensitivity of X-ray detection device.
The thickness of secondary electron emission layer has certain influence to improving the mobility of active layer charge carrier, and the thickness of secondary electron emission layer is unsuitable excessive.In the utility model embodiment, the thickness of the first secondary electron emission layer and the second secondary electron emission layer exists
between.
In the thin-film transistor of the x-ray detection device array base palte that the utility model embodiment provides, active layer adopts the semi-conducting materials such as semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material, avoided amorphous silicon semiconductor material as the array base palte of active layer repeatedly crooked or folding and occur the problem of rete be full of cracks, make the array base palte in the present embodiment can be for flexible x-ray detection device.The thickness of the source layer of the thin-film transistor of the utility model embodiment x-ray detection device array base palte is
The underlay substrate of a kind of x-ray detection device array base palte that the utility model embodiment provides adopts flexible material, to reach, realizes the flexible object detecting.The flexible substrate preferred polymers material of array base palte, such as polyethylene, PETG, polyvinyl alcohol, polyimides etc.
With reference to figure 4, the thin-film transistor 500 of a kind of x-ray detection device array base palte that the utility model embodiment provides comprises grid 501, gate insulator 502, the first secondary electron emission layer 503, active layer 504, the second secondary electron emission layer 505, and source electrode 5061 and drain electrode 5062.Wherein, grid 501 is formed on flexible substrate 400, gate insulator 502 is formed on grid 501, the first secondary electron emission layer 503, active layer 504, the second secondary electron emission layer 505 are formed on gate insulator 502 successively, and source electrode 5061 and 5062 of drain electrodes are formed on the second secondary electron emission layer 505.
In the x-ray detection device array base palte that the utility model provides, thin-film transistor can, for top gate type, bottom gate type, etching barrier type, back of the body channel-etch type, coplanar type or other structure arbitrarily, not repeat at this one by one.The utility model embodiment only be take bottom gate thin film transistor as example explanation, and the thin-film transistor of other structures is also applicable.Active layer arranges secondary electron emission layer in both sides Shang Xia 504, and secondary electron emission layer adopts magnesium oxide or beryllium oxide etc. to have the material of larger secondary electron yield.When having the electronics of certain energy and bombard secondary electron emission layer, secondary electron emission layer produces more free electron.When making alive not, the resistivity of secondary electron emission layer is very large; Be greater than certain threshold voltage adding, the charge carrier of active layer is under electric field action during directional migration, charge carrier (electronics) can bump with secondary electron emission layer, thereby can from secondary electron emission layer, obtain more charge carrier, improved the mobility of active layer charge carrier between source electrode and drain electrode, improve the performance of thin-film transistor, promoted the sensitivity of x-ray detection device.
Simultaneously, the active layer of the thin-film transistor of the x-ray detection device array base palte that the utility model provides adopts semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material, avoided current material as amorphous silicon semiconductor material as the array base palte of active layer repeatedly crooked or folding and occur the problem of rete be full of cracks, make the array base palte in the present embodiment can be for flexible x-ray detection device.
In the utility model embodiment, the more difficult materials that penetrate of X ray such as the preferred heavy metal of material of the grid 501 of thin-film transistor 500 or heavy metal alloy, for example copper, lead or Pot metal, also can adopt and manufacture conventional molybdenum and the molybdenum alloy of grid.
The material of gate insulator 502 is the good materials of bend resistance performance such as dielectric resin material, for example poly-(methyl) esters of acrylic acid, polyimide like flexible dielectric resin material.
The material of source electrode and drain electrode is the conductor materials such as conductor carbon nano-tube material or conductor grapheme material.Carbon nano-tube and Graphene possess different character through different PROCESS FOR TREATMENT, can be conductor material, semi-conducting material or insulating material.In the utility model embodiment, oxide/carbon nanometer tube or hydrogenation Graphene that active layer adopts are semi-conducting material, and carbon nano-tube or Graphene that source electrode and drain electrode adopt are conductor material.
In embodiment shown in Fig. 4, photodiode 600 is arranged on source-drain electrode layer, photodiode is PIN type photodiode, and PIN type photodiode comprises p type semiconductor layer 601, I type semiconductor layer (intrinsic semiconductor layer) 602 and n type semiconductor layer 603.PIN type photodiode is the PN junction between two kinds of semiconductors, or generates I type floor between the adjacent domain ， P district of the knot between semiconductor and metal and N district, absorbs light radiation and produces a kind of light detecting device of photoelectric current.PIN type photodiode has the advantages such as electric capacity is little, the transit time is short, sensitivity is high.The preferred PIN type of photodiode in the utility model embodiment, photodiode can be also MIS type photodiode or other form photodiodes certainly.The bias electrode 6061 that forms the first electrode 604, passivation layer 605 and be connected with the first electrode 604 by the first via hole 6051 on passivation layer 605 on the PIN knot of photodiode.
At thin-film transistor and photodiode periphery, be also provided with peripheral passivation layer, peripheral passivation layer 607 is formed on bias electrode 6061, and covers whole substrate.
X-ray detection device array base palte in the utility model embodiment can adopt six composition techniques (6Mask) to form, and its main processes as shown in Figure 5 and Figure 6, comprising:
Step 201: form grid layer film on underlay substrate, comprise the figure of the grid 501 of grid line and the thin-film transistor being connected with grid line by composition technique formation for the first time.Detailed process: can utilize magnetron sputtering (Sputter) method growth grid layer film on underlay substrate, gate layer material can adopt the metal or alloy such as alloy, copper, lead or Pot metal of molybdenum (Mo), molybdenum conventionally; Then utilize photoetching process to form the figure of the grid 501 that comprises grid line and the thin-film transistor being connected with grid line.The concrete steps of photoetching process comprise: on grid layer film, apply photoresist; Utilize mask plate to base board to explosure; Through developing process, form photoresist layer figure; Adopt lithographic method to remove selectively grid layer film (grid layer that covers photoresist is not etched); After finishing, etching technics by the photoresist lift off covering on grid layer film, finally obtains comprising the figure of grid line and the grid of the thin-film transistor being connected with grid line.Above step can apply referred to as photoresist, exposes, development, etching, photoresist lift off.Form grid layer film and also can adopt by other means, as painting method forms grid layer film, gate layer material can be also the conductor materials such as conductor carbon nano-tube material.The mode that forms grid layer figure can adopt other modes except photoetching process, as laser or electron beam melting loss method.
Step 202: form successively gate insulator layer film, the first secondary electron emission layer film, active layer film, the second secondary electron emission layer film, source-drain electrode layer film on the substrate of completing steps 201, by composition technique for the second time, form the figure of the first secondary electron emission layer 503, active layer 504, the second secondary electron emission layer 505, and comprise source electrode 5061, the figure of 5062 the source-drain electrode layer film of draining.The second secondary electron emission layer 505 comprises reflecting part 5051, and reflecting part 5051 can reflect the light of transmission, improves the utilance of light, thereby improves the detection sensitivity of x-ray detection device.The material of gate insulator 502 is generally silicon nitride, can adopt chemical vapor deposition method to form.Array base palte in the utility model embodiment can be used for flexible x-ray detection device, the preferred organic dielectric resin material of gate insulator, resin materials such as poly-(methyl) esters of acrylic acid, polyimide.On gate insulator, deposit the first secondary electron emission layer film, can adopt magnetron sputtering (Sputter) method growth of magnetisum oxide or beryllium oxide film.On the first secondary electron layer film, form active layer, active layer adopts the semi-conducting materials such as semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material.Because the structure of carbon nano-tube and Graphene is special, both can be used as conductor and used, also can make it to become semiconductor by UV-irradiation oxygen treatments applied carbon nano-tube, or make it to become semiconductor by hydrogen, argon gas processing Graphene.On active layer, deposit the second secondary electron emission layer film.On the second secondary electron emission layer film, form source-drain electrode layer film, can adopt chemical vapour deposition (CVD) or painting method to form conductor carbon nano-tube material rete as source-drain electrode layer film.By composition technique for the second time, form the figure in the first secondary electron emission layer, active layer and the second secondary electron reflector, and the figure that comprises the source-drain electrode layer film of source electrode and drain electrode.Form the figure of the first secondary electron emission layer, active layer, the second secondary electron emission layer, form the source-drain electrode layer film figure that comprises source electrode and drain electrode, adopt intermediate tone mask technique.
Step 203: deposit successively n type semiconductor layer, I type semiconductor layer, p type semiconductor layer and the first conductive membrane layer on the substrate of completing steps 202, by composition technique for the third time, form the figure that comprises the semiconductor portions (n type semiconductor layer 601, I type semiconductor layer 602, p type semiconductor layer 603) of PIN type photodiode and comprise the first electrode 604.Formation n type semiconductor layer, I type semiconductor layer, p type semiconductor layer can adopt chemical vapor deposition method or coating processes conventionally.N type semiconductor layer, I type semiconductor layer, p type semiconductor layer can adopt carbon nano-tube semi-conducting material.The first conductive membrane layer can adopt tin indium oxide (ITO) material, adopts magnetron sputtering technique to form.Composition technique can adopt photoetching process, specifically comprises photoresist coating, exposure, development, etching, photoresist lift off, finally obtains comprising the semiconductor portions of photodiode and the figure of the first electrode.
Step 204: deposit passivation layer 605 on the substrate of completing steps 203, and be formed for connecting the first via hole 6051 of bias electrode and the first electrode by the 4th composition technique, and for connecting the second via hole 6052 of thin-film transistor source electrode 5061 and holding wire.Passivation layer can adopt silicon nitride or dielectric resin material, preferred dielectric resin material in the utility model embodiment.By composition technique, be generally photoetching process, form the figure of the passivation layer that comprises the first via hole 6051 and the second via hole 6052.
Step 205: deposit the second conductive membrane layer on the substrate of completing steps 203, and form by the 5th composition technique the figure that comprises bias electrode 6061 and holding wire 6062.Detailed process can adopt coating processes to form carbon nanotube conductive thin film, and by composition technique, normally photoetching process, forms the figure that comprises bias electrode 6061 and holding wire 6062.Bias electrode 3061 is connected with the first electrode 304 by the first via hole 3051; Holding wire 3062 is connected with the source electrode 2051 of thin-film transistor by the second via hole 3052.
Step 206: deposit peripheral passivation layer on the substrate of completing steps 205, and form the figure of peripheral passivation layer 607 by the 6th composition technique.The material of peripheral passivation layer can adopt dielectric resin material, utilizes painting method to form insulating resin film, forms the figure of peripheral passivation layer by composition technique.
It should be noted that, above embodiment is only unrestricted for the technical solution of the utility model is described, although the utility model is had been described in detail with reference to preferred embodiment, the ordinary person of this area is to be understood that, can modify or be equal to replacement the technical solution of the utility model, and not depart from the spirit and scope of technical solutions of the utility model.
Claims (10)
1. an x-ray detection device array base palte, comprise thin-film transistor and the photodiode being connected with thin-film transistor, described thin-film transistor comprises grid, gate insulator, active layer and source electrode, drain electrode, it is characterized in that, under described active layer, be provided with the first secondary electron emission layer, on described active layer, be provided with the second secondary electron emission layer.
2. array base palte according to claim 1, is characterized in that, the material of described the first secondary electron emission layer and the second secondary electron emission layer is metal oxide.
3. array base palte according to claim 2, is characterized in that, described metal oxide is magnesium oxide or beryllium oxide.
4. array base palte according to claim 1, is characterized in that, the thickness of described the first secondary electron emission layer and the second secondary electron emission layer is
5. array base palte according to claim 1, is characterized in that, the material of described active layer is semiconductor oxide carbon nano-tube material or semiconductor hydrogenation grapheme material.
6. array base palte according to claim 1, is characterized in that, the thickness of described active layer is
7. array base palte according to claim 1, it is characterized in that, described array base palte comprises underlay substrate, described thin-film transistor and described photodiode are arranged on described underlay substrate, described underlay substrate is flexible material, and described flexible material is polyethylene, PETG, polyvinyl alcohol or polyimides.
8. array base palte according to claim 1, is characterized in that, the material of described grid is heavy metal or heavy metal alloy; The material of described gate insulator is dielectric resin material; The material of described source electrode and described drain electrode is conductor carbon nano-tube material or conductor grapheme material.
9. array base palte according to claim 1, it is characterized in that, described photodiode is PIN type photodiode, described PIN type photodiode comprises p type semiconductor layer, I type semiconductor layer and n type semiconductor layer, and described p type semiconductor layer, I type semiconductor layer and n type semiconductor layer adopt semiconductor carbon nanometer tube material; Described photodiode also comprises passivation layer and bias electrode, and the material of described passivation layer is dielectric resin material, and the material of described bias electrode is conductor carbon nano-tube material.
10. array base palte according to claim 1, is characterized in that, described thin-film transistor and described photodiode periphery are provided with peripheral passivation layer, and the material of described peripheral passivation layer is dielectric resin material.
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