CN203351645U - Structure for reverse pasting application of double-electrode power chip - Google Patents
Structure for reverse pasting application of double-electrode power chip Download PDFInfo
- Publication number
- CN203351645U CN203351645U CN 201320291358 CN201320291358U CN203351645U CN 203351645 U CN203351645 U CN 203351645U CN 201320291358 CN201320291358 CN 201320291358 CN 201320291358 U CN201320291358 U CN 201320291358U CN 203351645 U CN203351645 U CN 203351645U
- Authority
- CN
- China
- Prior art keywords
- chip
- support
- die bond
- electrode
- negative pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Die Bonding (AREA)
Abstract
The utility model discloses a structure for the reverse pasting application of a double-electrode power chip, and the structure comprises a support and the double-electrode power chip. The positive electrode of the chip is disposed opposite to the positive electrode of the support, and the negative electrode of the chip is disposed opposite to the negative electrode of the support, and the chip is fixed on the support in a wafer-binding manner. Conductive wafer-binding materials, which are disposed between the positive electrode of the chip and the positive electrode of the support, and between the negative electrode of the chip and the negative electrode of the support, are used for connecting and fixing the chip and the support. In this application method, the electrodes of the chip face the support or a PCB board for wafer binding, wherein a mode in which wafer-binding materials is employed is used for wafer binding. In the utility model, a gold thread structure is canceled, and a wiring process is saved. The chip electrodes are directly connected with the support electrodes through the conductive wafer-binding materials. A packaging structure and a packaging process are simplified, the tedious wiring process is saved, the wafer-binding time is shortened, and the cost of materials and labor is saved.
Description
[technical field]
The utility model relates to the lighting source field, relates in particular to the anti-sealing packing technique field of formal dress bipolar electrode luminescence chip.
[background technology]
What in the utility model, relate generally to is the formal dress surface bipolar electrode chip that a kind of top layer is the P layer, and this chip all is widely used at lighting fields such as showing class, class backlight, indication class, view class, lamp decoration class at present.This chip need to pass through the conventional package process, could realize application.Conventional method for packing, be by this chip by artificial or machine automatization pick-up chip process, by chip, with electrode, mode upward is placed on support.The position of predetermined chip placement on support, put glue (being generally the die bond colloid of argentiferous or insulation class) in advance, then chip alignment point glue position placed, and be cured.Now chip contacts support down with substrate, chip electrode towards.And then carry out routing procedure, gold thread or alloy wire one end melt solid on the electrode of chip the other end be connected on support.Bipolar electrode chip to make a call to two lines as wire after, just can enter the link of lower road encapsulating encapsulation.
Above-mentioned method for packing exists following major defect and problem: the one, and because the heat dispersion of Sapphire Substrate is poor, need to be too much to the follow-up input of head it off; The 2nd, need two gold threads or alloy wire, both can cause the quality problems of later stage product in encapsulation and application end, cause yield to reduce, raised again cost; The 3rd, former technique need to have the operation of die bond, routing, except die bond machine, wire bonder, also baking oven will be arranged, and also needs curing time about 3 hours.Packaging process complexity, length consuming time, production efficiency are low.
[summary of the invention]
The utility model has proposed a kind of routing technique, short anti-application structure of pasting of formal dress bipolar electrode chip of die bond time omitted for above situation, can omit the routing process, cancels the gold thread structure, improves yields, shortens the die bond time, enhance productivity.
The anti-structure of pasting application of formal dress bipolar electrode chip that the utility model is related, point die bond material on support or pcb board, formal dress bipolar electrode chip is aimed to the die bond positions of materials and carry out the die bond process, it is characterized in that, formal dress bipolar electrode chip carries out die bond with its electrode towards support or pcb board direction, completes die bond and can carry out packaging plastic to chip package afterwards.
Described die bond process is to adopt circuit between energy conduction electrode and support, and the die bond material of energy fixed chip.
Described die bond process is to adopt tinol as die bond material, process Reflow Soldering, chip to be fixed on support, completes conducting chip electrode and support circuitry simultaneously and chip is fixed on to double action on support.
Described die bond process is to adopt elargol as the die bond material, and chip is fixed on support, completes conducting chip electrode and support circuitry simultaneously and chip is fixed on to the double action on support.
The anti-structure of pasting application of a kind of formal dress bipolar electrode chip, comprise support and formal dress bipolar electrode chip, chip comprises substrate layer, the N layer, P layer and two electrodes, described substrate layer, N layer and P layer are cascading, and positive pole and two electrodes of negative pole are arranged on the P layer, be provided with support positive pole and the support negative pole relative with negative pole with the positive pole of formal dress bipolar electrode chip on support, chip is anodal directly facing to the support positive pole with its chip, chip directly faces toward the mode die bond of support negative pole on support with its chip negative pole, between chip positive pole and support positive pole, there is conductivity die bond material and be connected and fixed chip and support between chip negative pole and support negative pole.
Described die bond material is can turning circuit and the tinol that is fixedly connected with.
Described die bond material is the conductive rubbers such as elargol, and the one's own profession industry personnel can select to have this character products substitution of the same type according to relevant professional knowledge, also belongs in technical solutions of the utility model.
The utility model adopts formal dress bipolar electrode chip is carried out to die bond with its electrode towards the mode of support, omitted the routing process, directly by conductivity die bond material, just can connect the electrode between chip electrode and support, simplified encapsulating structure and packaging technology, omitted loaded down with trivial details routing process and shortened the die bond time, saved material and human cost.
[accompanying drawing explanation]
Fig. 1 is the anti-combining structure schematic diagram that pastes application structure of the utility model one embodiment formal dress bipolar electrode chip;
Fig. 2 is the anti-component structure schematic diagram that pastes application structure of the utility model one embodiment formal dress bipolar electrode chip.
Wherein: 10, support; 11, support positive pole; 12, support negative pole; 20, chip; 21, substrate layer; 22, N layer; 23, P layer; 24, electrode; 241, chip positive pole; 242, chip negative pole; 30, die bond material.
[embodiment]
Below in conjunction with the utility model the drawings and specific embodiments, the anti-structure of pasting application of the utility model formal dress bipolar electrode chip is described in further detail.
Please refer to accompanying drawing 1: there is shown the anti-structure of pasting application of a kind of formal dress bipolar electrode chip, this encapsulating structure comprises support 10 and formal dress bipolar electrode chip 20, chip comprises substrate layer 21, N layer 22, P layer 23 and two electrodes 24, described substrate layer 21, N layer 22 and P layer 23 are cascading, and positive pole and two electrodes 24 of negative pole are arranged on P layer 23, be provided with the support relative with negative pole with the positive pole of formal dress bipolar electrode chip anodal 11 and support negative pole 12 on support 10, chip 20 is opposite to support positive pole 11 with its chip positive pole 241, chip with its chip negative pole 242 opposed mounts negative pole 12 die bonds on support 10, between chip anodal 241 and support positive pole, there is conductivity die bond material and be connected and fixed chip and support between chip negative pole 242 and support negative pole.
Described die bond material 30 is can turning circuit and the tinol that is fixedly connected with.
Described die bond material 30 is elargol.
The anti-application process that pastes of formal dress bipolar electrode chip, point die bond material on support or pcb board, formal dress bipolar electrode chip is aimed to the die bond positions of materials and carry out the die bond process, formal dress bipolar electrode chip carries out die bond with its electrode towards support or pcb board direction, completes die bond and can carry out packaging plastic to chip package afterwards.
Described die bond process is to adopt circuit between energy conduction electrode and support, and the die bond material of energy fixed chip.
Described die bond process is to adopt tinol as die bond material, process Reflow Soldering, chip to be fixed on support, completes conducting chip electrode and support circuitry simultaneously and chip is fixed on to double action on support.
Described die bond process is to adopt elargol as the die bond material, and chip is fixed on support, completes conducting chip electrode and support circuitry simultaneously and chip is fixed on to the double action on support.
The utility model adopts formal dress bipolar electrode chip is carried out to die bond with its electrode towards the mode of support, omitted the routing process, directly by the die bond material of conduction, just can connect the electrode between chip electrode and support, simplified encapsulating structure and packaging technology, omitted loaded down with trivial details routing process and shortened the die bond time, saved material and human cost.
The above, it is only the utility model preferred embodiment, not the utility model is done to any pro forma restriction, although the utility model discloses as above with preferred embodiment, yet not in order to limit the utility model, any those skilled in the art, within not breaking away from the technical solutions of the utility model scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solutions of the utility model content, refer to any simple modification that above embodiment is done according to the utility model technology, equivalent variations and modification, all belong in the scope of technical solutions of the utility model.
Claims (3)
1. the anti-structure of pasting application of formal dress bipolar electrode chip, comprise support and formal dress bipolar electrode chip, chip comprises substrate layer, the N layer, P layer and two electrodes, described substrate layer, N layer and P layer are cascading, and positive pole and two electrodes of negative pole are arranged on the P layer, be provided with support positive pole and the support negative pole relative with negative pole with the positive pole of formal dress bipolar electrode chip on support, chip is anodal directly facing to the support positive pole with its chip, chip directly faces toward the mode die bond of support negative pole on support with its chip negative pole, between chip positive pole and support positive pole, there is conductivity die bond material and be connected and fixed chip and support between chip negative pole and support negative pole.
2. the anti-structure of pasting application of formal dress bipolar electrode chip according to claim 1, is characterized in that, described die bond material is can turning circuit and the tinol that is fixedly connected with.
3. the anti-structure of pasting application of formal dress bipolar electrode chip according to claim 1, is characterized in that, described die bond material is elargol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320291358 CN203351645U (en) | 2013-05-24 | 2013-05-24 | Structure for reverse pasting application of double-electrode power chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320291358 CN203351645U (en) | 2013-05-24 | 2013-05-24 | Structure for reverse pasting application of double-electrode power chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203351645U true CN203351645U (en) | 2013-12-18 |
Family
ID=49751502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320291358 Expired - Lifetime CN203351645U (en) | 2013-05-24 | 2013-05-24 | Structure for reverse pasting application of double-electrode power chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203351645U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337578A (en) * | 2013-05-24 | 2013-10-02 | 袁灵 | Method and structure of upright-installed dual-electrode chip inverted pasting application |
-
2013
- 2013-05-24 CN CN 201320291358 patent/CN203351645U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337578A (en) * | 2013-05-24 | 2013-10-02 | 袁灵 | Method and structure of upright-installed dual-electrode chip inverted pasting application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103994359A (en) | Modularized LED lamp strip and processing method thereof | |
| CN104952864B (en) | LED filament and its manufacture method | |
| CN203351645U (en) | Structure for reverse pasting application of double-electrode power chip | |
| CN103337578A (en) | Method and structure of upright-installed dual-electrode chip inverted pasting application | |
| CN210429881U (en) | LED support packaging structure | |
| CN204088362U (en) | A kind of chip upside-down mounting type LED silk | |
| CN203871372U (en) | LED light source | |
| CN203596366U (en) | LED module structure easy to process | |
| CN203553212U (en) | Composable wafer direct packaging COB support | |
| CN204946926U (en) | A kind of novel inverted LED lamp bead | |
| CN206271701U (en) | A kind of COB light source and LED lamp | |
| CN205429007U (en) | LED filament convenient to make | |
| CN201725810U (en) | Packaging structure of high-power LED | |
| CN110224055A (en) | A kind of encapsulating structure and packaging technology of paster type light emitting type | |
| CN206480625U (en) | A kind of RGBLED structures | |
| CN206370419U (en) | Many pin surface mount elements | |
| CN109346460A (en) | MiniLED preparation method | |
| CN204375738U (en) | Wafer-level package structure | |
| CN204375730U (en) | A kind of wafer-level package structure | |
| CN204144251U (en) | A kind of LED lamp bead of multifaceted light-emitting | |
| TWI513052B (en) | Light emitting module | |
| CN204011414U (en) | There is the LED tungsten lamp support of heat sink structure | |
| CN210349870U (en) | LED straw hat lamp suitable for surface mounting | |
| CN203445157U (en) | Directly-surface mounted type LED lamp bead | |
| CN110335863B (en) | LED support packaging structure and packaging technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN LEDMY CO., LTD. Free format text: FORMER OWNER: YUAN LING Effective date: 20141204 Free format text: FORMER OWNER: WANG JINGWEI Effective date: 20141204 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20141204 Address after: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Patentee after: SHENZHEN LEDMY Co.,Ltd. Address before: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building five floor West Patentee before: Yuan Ling Patentee before: Wang Jingwei |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Patentee after: SHENZHEN LEDMY Co.,Ltd. Address before: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Patentee before: SHENZHEN LEDMY Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20131218 |
|
| CX01 | Expiry of patent term |