CN106841783A - Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors - Google Patents
Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors Download PDFInfo
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- CN106841783A CN106841783A CN201710052623.7A CN201710052623A CN106841783A CN 106841783 A CN106841783 A CN 106841783A CN 201710052623 A CN201710052623 A CN 201710052623A CN 106841783 A CN106841783 A CN 106841783A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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Abstract
Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors of the invention, realize that structure is mainly made up of cantilever beam coupled structure, T junction and indirect heating type microwave power detector and switch.Cantilever beam coupled structure include two groups of cantilever beams, every group of cantilever beam by two symmetrical cantilever beams constitute two cantilever beams between CPW transmission lines electrical length in measured signal frequency range centre frequency 35GHz place be λ/4.To realize the detection of unknown frequency millimeter wave phase, frequency first to measured signal is detected.Frequency detecting by measure two-way at the centre frequency 35GHz in measured signal frequency range phase difference be 90 degree coupled signal synthesis power realize；By by two-way, phase difference is 90 degree of coupled signal to phase-detection at centre frequency 35GHz, is synthesized with the reference signal after two-way decile respectively, also with indirect heating type microwave power detector detection synthesis power, so as to obtain the phase of measured signal.
Description
Technical field
The present invention proposes a kind of silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors, category
In the technical field of microelectromechanical systems (MEMS).
Background technology
In microwave technical field, phase is one of important parameter of microwave signal, and microwave signal phase detection is in microwave letter
Number generation, propagate and receive links in suffer from extremely important effect, be indispensable one of electromagnetic measurement
Point.In actual applications, microwave signal phase detecting system can be used to measure the azimuth of object, extract the how general of moving object
Strangle phase characteristic of frequency displacement, phased-array radar and measurement device etc..The method of microwave signal phase detection mainly has two kinds：Letter
Number decomposition method and vector synthesis.Vector synthesis compared with signal decomposition method, with structural principle it is simple, working band is wide,
The advantages of passive detection, while easily being realized by ripe MEMS technology, realize the miniaturization of microwave signal detecting system
With it is integrated.A length of 1~10 millimeter of electromagnetic wave is referred to as millimeter wave, belongs to the microwave of upper frequency, due to larger band
Wave beam wide and narrower, realizes that the detection of millimeter wave phase has great significance.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of silicon-base micro-mechanical cantilever beam coupling indirect heating type millimeter wave phase
Bit detector, two groups of cantilever beams are in the top of CPW central signal lines, coupling unit measured signal, two groups of cantilever beam coupled signals
Phase difference be 90 degree at centre frequency 35GHz in measured signal frequency range；Every group of cantilever beam is symmetrical outstanding by two
Arm beam is constituted, and the power of two cantilever beam couplings is equal, and the signal of one of cantilever beam coupling is used for coupled power and frequency
Detection, two states conversion realizes that the signal of another cantilever beam coupling is used for phase-detection, so as to complete unknown by switching
The detection of frequency mm wave phase.
Technical scheme：In order to solve the above technical problems, the present invention proposes a kind of silicon-base micro-mechanical cantilever beam coupling indirectly
Heated type millimeter wave phase detectors.Phase detectors realize structure choice high resistant Si for substrate, by cantilever beam coupled structure,
Power combiner/distributor, indirect heating type microwave power detector and switch are constituted；Wherein, cantilever beam coupled structure up and down,
It is symmetrical, it is made up of CPW central signals line, transmission line ground wire, cantilever beam, cantilever beam anchor area, cantilever beam is placed in CPW centers letter
, there is one layer of Si the top of number line below cantilever beam3N4Dielectric layer covers central signal line；Measured signal is coupled by cantilever beam
The first port input of structure, from second port output to subordinate's circuit；The signal of cantilever beam coupling of top two is by the 3rd end
Mouth and the output of the 4th port, the 3rd port are connected with the 7th port of first switch, the tenth end of the 4th port and second switch
Mouth is connected, and the 8th port of first switch is connected with the first indirect heating type microwave power detector, and the 9th port is T-shaped with first
13rd port of knot is connected, and the tenth Single port of second switch is connected with the second indirect heating type microwave power detector, the
Ten Two-port netwerks are connected with the 14th port of the first power combiner, and finally, the 15th port of the first power combiner connects
Three indirect heating type microwave power detectors；The signal of cantilever beam coupling of lower section two is exported by fifth port and the 6th port,
Fifth port is connected with the 19th port of the 3rd T junction, and the 6th port is connected with the 20th Two-port netwerk of the 4th T junction, treats
Survey ten six port input of the signal from the second T junction, the 17th port of the second T junction and the 20th end of the 3rd T junction
Mouth is connected, and the 18th port is connected with the 23rd port of the 4th T junction, and the 20th Single port of the 3rd T junction connects the 4th
Indirect heating type microwave power detector, the 24th port of the 4th T junction connects the 5th indirect heating type microwave power sensing
Device.
T junction is made up of CPW central signals line, transmission line ground wire and air bridges, and wherein air bridges are used between ground wire
Interconnection, the release of air bridges for convenience made one group of array of orifices in air bridges.
Millimeter-wave signal to be measured is input into from first port, and reference signal is input into by the 16th port；Carry out millimeter-wave frequency
During with phase-detection, coupled signal is input to indirect heating type microwave power detector measures coupled signal by switching first
Watt level, then by switch by phase difference at the centre frequency 35GHz in two-way measured signal frequency range be 90 degree
Coupled signal be input to T junction, it is same to detect composite signal watt level using indirect heating type microwave power detector, by
The size of coupled signal and composite signal can extrapolate the frequency of millimeter-wave signal；In other two-way measured signal frequency range
Centre frequency 35GHz at phase difference be 90 degree coupled signal respectively with power decile after reference signal synthesis, by indirect
Heated microwave power sensor detects the size of two-way composite signal power, and simultaneous equations can solve millimeter wave letter to be measured
Number phase, be capable of achieving unknown frequency millimeter wave whole cycle scope internal phase angle measurement.
Beneficial effect：The present invention has advantages below relative to existing phase detectors：
1. phase detectors of the invention use cantilever beam coupled modes, can realize online phase-detection, to be measured
Signal can continue to output next stage and use after tested；
2. frequency detecting can be carried out simultaneously such that it is able to realize the phase-detection of unknown frequency signal；
3. principle and simple structure, chip area are smaller, are all made up of thus in the absence of DC power passive device；
4. phase-detection of the invention using indirect heating type microwave power detector due to realizing coupled power measurement, line
Property degree is good, and dynamic range is big.
Brief description of the drawings
Fig. 1 is the realization knot of silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors of the present invention
Structure schematic diagram；
Fig. 2 be cantilever beam coupled structure of the present invention A-A ' to profile；
Fig. 3 is the top view of T junction of the present invention；
Fig. 4 is the top view of indirect heating type microwave power detector of the present invention；
Fig. 5 be indirect heating type microwave power detector of the present invention B-B ' to profile；
Fig. 6 is the top view of present invention switch；
Fig. 7 be the present invention switch C-C ' to profile.
Figure includes：High resistant Si substrates 1, SiO2Layer 2, CPW central signals line 3, transmission line ground wire 4, cantilever beam 5, cantilever
Liang Mao areas 6, air bridges 7, terminal resistance 8, P-type semiconductor arm 9, N-type semiconductor arm 10, thermoelectric pile metal interconnecting wires 11, output
Pad12, Si3N4Dielectric layer 13, pull-down electrode 14, cantilever beam coupled structure 15, first switch 16, second switch 17, first port
1-1, second port 1-2, the 3rd port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1,
8th port 2-2, the 9th port 2-3, the tenth port 3-1, the tenth Single port 3-2, the tenth Two-port netwerk 3-3, the 13rd port 4-
1, the 14th port 4-2, the 15th port 4-3, the 16th port 5-1, the 17th port 5-2, the 18th port 5-3, the tenth
Nine port 6-1, the 20th port 6-2, the 20th Single port 6-3, the 20th Two-port netwerk 7-1, the 23rd port 7-2, second
14 port 7-3.
Specific embodiment
Specific embodiment of the invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-7, the present invention proposes a kind of silicon-base micro-mechanical cantilever beam coupling indirect heating type millimeter wave phase inspection
Survey device.Realize that structure mainly includes：Cantilever beam coupled structure 15, T junction, indirect heating type microwave power detector and switch.
Wherein, cantilever beam coupled structure 15 is used to couple the Partial Power of measured signal, for phase-detection；T junction is three port devices
Part, can be used for power distribution and power combing, without isolation resistance；Indirect heating type microwave power detector is used to detect microwave
The power of signal, principle is based on Joule effect and Seebeck effect；Switch for changing coupled power detection and frequency detecting
Two states.
Cantilever beam coupled structure 15 is made up of CPW central signals line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchor area 6.
Two groups of cantilever beams 5 are suspended from the top of CPW central signals line 3, and centre is separated with Si3N4Dielectric layer 13 and air, an equivalent dual dielectric layer
MIM capacitor, the end of cantilever beam 5 by cantilever beam anchor area 6 with coupling branch CPW central signals line 3 be connected, every group of cantilever beam
5 include two cantilever beams 5 of symmetric design, and the CPW transmission lines electrical length between two groups of cantilever beams 5 is in measured signal frequency range
It is λ/4 at interior centre frequency 35GHz.By adjusting the shape of the transmission line ground wire 4 near cantilever beam 5, change CPW transmission lines
Impedance, the capacitance variations that the introducing for compensating cantilever beam 5 brings.
T junction is made up of CPW central signals line 3, transmission line ground wire 4 and air bridges 7, wherein air bridges be used for ground wire it
Between interconnection, the release of air bridges for convenience made one group of array of orifices in air bridges.
Indirect heating type microwave power detector is by CPW central signals line 3, transmission line ground wire 4, terminal resistance 8, p-type half
Conductor arm 9, N-type semiconductor arm 10, thermoelectric pile metal interconnecting wires 11, output Pad12 are constituted.In terminal resistance 8 and thermoelectric pile
Lower section, high resistant Si substrates 1 are etched to form SiO2Membrane structure, the output sensitivity for increasing thermoelectric pile.Microwave signal is led to
It is heat to cross CPW and be transferred to terminal resistance 8 and dissipate, and certain Temperature Distribution is formed on film, due to the cold and hot two ends of thermoelectric pile
In the presence of certain temperature difference, the thermoelectrical potential of temperature difference is proportional to based on the output of Seebeck effects.
Switch is made up of CPW central signals line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchor area 6 and pull-down electrode 14,
One layer of Si is coated with pull-down electrode 143N4Dielectric layer 13, when not applying DC voltage, two branch roads are off, and pass through
Apply certain direct current biasing in pull-down electrode 14, be capable of achieving the conducting of correspondence branch road, further realize that coupled power is detected
With the conversion of frequency detecting two states.
When first port 1-1 is input into the microwave signal of certain power, measured signal by CPW transmission lines, by the second end
Mouth 1-2 enters next stage.Positioned at the meeting coupling unit power of cantilever beam 5 of the top of CPW central signals line 3, due to two in every group
The symmetric design of cantilever beam 5, so the microwave power of coupling is equal.It is each in two groups of cantilever beams 5 to select coupled signal, centre frequency all the way
f0Phase difference is 90 degree at=35GHz, and phase difference is represented by during frequency f：
Two-way coupled signal can be expressed as：
Wherein, a1And a2The respectively amplitude of two-way coupled signal, ω is the angular frequency of input signal,It is initial phase,
Cause that coupled signal is input to indirect heating type microwave power detector by switch, a can be obtained1And a2Size.Synthesis letter
Number power be represented by：
To obtain the power P of composite signal, cause that coupled signal is input to T junction by switch, and by indirect heating type
Microwave power detector carries out power detection.By (1) and (4) formula, the relation of signal frequency and power output can be expressed as：
According to above formula relation, the frequency of millimeter-wave signal to be measured can be obtained by the output of indirect heating type microwave power detector
Rate.
When carrying out phase-detection, phase difference is 90 at the centre frequency 35GHz in two-way measured signal frequency range in addition
The coupled signal of degree synthesizes with the reference signal after power decile respectively, and the reference signal after power decile can be expressed as：
v3=a3cos(ωt+φ) (6)
Then the watt level of composite signal is respectively：
P1And P2Size detected by the microwave power detector of terminal, the measured signal according to (10) and (11)
The relation of the size of phase and composite signal power, only existsOne unknown quantity, by indirect heating type microwave power detector
Output thermoelectrical potential can obtain the phase of millimeter-wave signal to be measured, be capable of achieving unknown frequency millimeter wave phase in the range of whole cycle
The measurement of parallactic angle.
Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors of the invention realize the system of structure
Preparation Method is as follows：
1) 4 inches of high resistant Si substrates 1 are prepared, electrical conductivity is 4000 Ω cm, and thickness is 400 μm；
2) thermally grown one layer of SiO2Layer 2, thickness is 1.2 μm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, and thickness is 0.4 μm；
4) one layer of photoresist and photoetching are coated, in addition to polysilicon resistance region exposes, other regions are photo-etched glue protection,
Phosphorus (P) ion is then poured into, doping concentration is 1015cm-2, form terminal resistance 8；
5) one layer of photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to P-type semiconductor arm region exposes, other areas
Domain is photo-etched glue protection, is then poured into boron (B) ion, and doping concentration is 1016cm-2, form the P-type semiconductor arm 9 of thermocouple；
6) one layer of photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to N-type semiconductor arm region exposes, other areas
Domain is photo-etched glue protection, is then poured into phosphorus (P) ion, and doping concentration is 1016cm-2, form the N-type semiconductor arm 10 of thermocouple；
7) one layer of photoresist, photoetching thermoelectric pile arm and polysilicon resistance figure are coated, then thermoelectricity is formed by dry etching
Even arm and polysilicon resistance；
8) one layer of photoresist, photoetching removal transmission line, thermoelectric pile metal interconnecting wires 11, pull-down electrode 14 and output are coated
Photoresist at Pad12；
9) electron beam evaporation forms ground floor gold (Au), and thickness is 0.3 μm, the Au on removal photoresist and photoresist,
Stripping forms ground floor Au, thermoelectric pile metal interconnecting wires 11, pull-down electrode 14 and the output Pad12 of transmission line；
10) LPCVD deposits one layer of Si3N4, thickness is 0.1 μm；
11) one layer of photoresist is coated, photoetching simultaneously retains the photoresist below cantilever beam 5, dry etching Si3N4, formed
Si3N4Dielectric layer 13；
12) one strata acid imide of uniform coating and litho pattern, thickness are 2 μm, retain the polyimides of the lower section of cantilever beam 5
As sacrifice layer；
13) photoresist, the light of photoetching removal cantilever beam 5, cantilever beam anchor area 6, transmission line and output Pad12 positions are coated
Photoresist；
14) Seed Layer of 500/1500/300A ° of Ti/Au/Ti, the thickness of re-plating one after Ti layers at the top of removal are evaporated
Spend Au layers for 2 μm；
15) Au on photoresist and photoresist is removed, cantilever beam 5, cantilever beam anchor area 6, transmission line and output is formed
Pad12；
16) deep reaction ion etching (DRIE) the backing material back side, makes the membrane structure below thermoelectric pile；
17) polyimide sacrificial layer is discharged：Developer solution soaks, the polyimide sacrificial layer under removal cantilever beam 5, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, is volatilized under normal temperature, dries.
Distinguish whether be the structure standard it is as follows：
Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors of the invention, the substrate of structure
Material is high resistant Si.Millimeter-wave signal to be measured is input into by port 1-1, is exported by port 1-2, positioned at the top of CPW central signals line 3
Two groups of coupling unit millimeter-wave signals to be measured of cantilever beam 5, every group of cantilever beam 5 include two cantilever beams 5 of symmetric design, two
The power of the coupling of cantilever beam 5 is equal, and the coupled signal of one of cantilever beam 5 is used for coupled power and frequency detecting, two kinds of shapes
State conversion realizes that the coupled signal of another cantilever beam 5 is used for phase-detection by switching；Coupling letter is caused by switch first
Number it is directly inputted to indirect heating type microwave power detector detection coupled power size, then causes two-way in institute by switch
Phase difference is that 90 degree of coupled signal is synthesized and by indirect heating type at the centre frequency 35GHz surveyed in signal frequency range
Microwave power detector detection synthesis power, so as to extrapolate the frequency of measured signal；During phase-detection, two-way is being surveyed into letter
Phase difference is 90 degree of coupled signal at centre frequency 35GHz in number frequency range, is believed with the reference after two-way decile respectively
Number synthesis, also with indirect heating type microwave power detector detection synthesis power, so as to obtain the phase of measured signal.
The structure for meeting conditions above is considered as silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter of the invention
Wave phase detector.
Claims (2)
1. a kind of silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors, it is characterized in that：The phase is examined
Device is surveyed by cantilever beam coupled structure (15), power combiner/distributor, indirect heating type microwave power detector and switch structure
Into；Wherein, cantilever beam coupled structure (15) is upper and lower, symmetrical, by CPW central signals line (3), transmission line ground wire (4), cantilever
Beam (5), cantilever beam anchor area (6) are constituted, and cantilever beam (5) is placed in the top of CPW central signals line (3), in the lower section of cantilever beam (5)
There is one layer of Si3N4Dielectric layer (15) covers central signal line (3)；Measured signal by cantilever beam coupled structure (15) first port
(1-1) is input into, from second port (1-2) output to subordinate's circuit；The signal of cantilever beam (5) coupling of top two is by the 3rd port
(1-3) and the 4th port (1-4) export, and the 3rd port (1-3) is connected with the 7th port (2-1) of first switch (16), and the 4th
Port (1-4) is connected with the tenth port (3-1) of second switch (17), the 8th port (2-2) and first of first switch (16)
Indirect heating type microwave power detector is connected, and the 9th port (2-3) is connected with the 13rd port (4-1) of the first T junction, the
Tenth Single port (3-2) of two switches (17) is connected with the second indirect heating type microwave power detector, the tenth Two-port netwerk (3-3)
It is connected with the 14th port (4-2) of the first power combiner, finally, the 15th port (4-3) of the first power combiner connects
3rd indirect heating type microwave power detector；The signal of cantilever beam (5) coupling of lower section two is by fifth port (1-5) and the 6th
Port (1-6) exports, and fifth port (1-5) is connected with the 19th port (6-1) of the 3rd T junction, the 6th port (1-6) and the
20th Two-port netwerk (7-1) of four T junctions is connected, and measured signal is input into from the 16th port (5-1) of the second T junction, the 2nd T
17th port (5-2) of type knot is connected with the 20th port (6-2) of the 3rd T junction, the 18th port (5-3) and the 4th T
23rd port (7-2) of type knot is connected, and the 20th Single port (6-3) of the 3rd T junction connects the 4th indirectly heat type micro-wave
Power sensor, the 24th port (7-3) of the 4th T junction connects the 5th indirect heating type microwave power detector.
2. silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors according to claim 1, its
It is characterized in：T junction is made up of CPW central signals line (3), transmission line ground wire (4) and air bridges (7), and wherein air bridges are used for
Interconnection between ground wire, for convenience release of air bridges has made one group of array of orifices in air bridges.
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