CN203164592U - A contact exposure mask plate - Google Patents
A contact exposure mask plate Download PDFInfo
- Publication number
- CN203164592U CN203164592U CN 201220316234 CN201220316234U CN203164592U CN 203164592 U CN203164592 U CN 203164592U CN 201220316234 CN201220316234 CN 201220316234 CN 201220316234 U CN201220316234 U CN 201220316234U CN 203164592 U CN203164592 U CN 203164592U
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- Prior art keywords
- contact exposure
- glass substrate
- mask plate
- thin film
- exposure
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Abstract
The utility model relates to a contact exposure mask plate including a soda glass or quartz glass substrate, wherein the upper surface of the glass substrate is coated with metal chromium film, a photolithography process is employed to obtain a chromium film pattern, and the chromium film pattern is coated by a conductive film. When contact exposure is performed, the impact to exposure results due to the produced static electricity generated by the contact friction between the mask plate and the photoresist coated substrate is prevented, and the adsorption of dust particles on the mask plate is reduced, thereby decreasing defects in lithography; and through optical exposure, the pattern on the mask plate is transferred to the substrate, improving the quality of the exposure.
Description
Technical field
The utility model is applicable to the semiconductor lithography technical field, relates to contact exposure mask version in a kind of photoetching process.
Technical background
Photoetching technique plays crucial effects always in integrated circuit (IC) industrial expansion.Contact photolithography owing to cost is low, simple to operate, resolution also can reach higher level and be widely used, also has important status in the evolution of photoetching technique, also have a wide range of applications at present at home.
The contact exposure technology is seven, a kind of optical lithography techniques that the eighties generally adopts, the difference of contact exposure and contactless exposure, when being to expose between mask and substrate relativeness be adjacent to or separate, the mask version is pressed on the substrate base of photoresist during contact exposure, contact exposure has the resolution height, the duplicating area is big, the duplicating precision is good, exposure sources is simple, characteristics such as easy to operate and production efficiency height, but can produce Electrostatic Absorption dust and other particle owing to apply the substrate of photoresist with contacting of mask, contact process each time, can on substrate and mask, all cause certain defective, influence yield rate and mask version life-span, the raising of alignment precision also is subjected to more restriction.Therefore, contact photoetching machine generally is used for tolerate device research and other application facet of higher defect level, it is generally acknowledged, contact exposure only be suitable for discrete component with in, the production of small scale integration.
Contact exposure has fabulous resolution, but have that dimension of picture is restive, alignment precision is low and mask serious problems such as scuffing easily, in order to overcome these shortcomings, the contact exposure system a lot of improvement have been done, mask closely contacted scratch mask easily with substrate when the utility model can effectively reduce contact exposure, and the effect of friction generation Electrostatic Absorption dust and particle, finish more accurate figure transfer process.
The utility model content
The purpose of this utility model is to provide a kind of contact exposure mask version at the defective of prior art existence, improves the exposure quality.For achieving the goal, the utility model adopts following technical proposals:
A kind of contact exposure mask version comprises a soda glass or quartz glass substrate, it is characterized in that: be coated with the crome metal film above the described glass substrate, photoetching process obtains the chromium thin film pattern, covers one deck conducting film on the chromium thin film pattern.
Above-mentioned glass substrate is square, and the length of side is 200mm, thickness 3-8mm.
Above-mentioned chromium thin film is sputter or is deposited on the glass substrate that thickness is 100-200nm.
Above-mentioned conducting film is nesa coating, and this nesa coating is transparent indium tin metal oxide ito thin film, and nesa coating is square, and the length of side is 200mm, and thickness is 50-100nm.
The utility model compared with prior art, have following apparent substantive distinguishing features and progress: the contact exposure mask version that the utility model provides, can be designed to different patterns, can be applicable to various devices to be exposed, it is mainly used in the contact exposure, at the chromium thin film pattern plating layer of transparent conducting film of mask version, can reduce the fricative static of mask version and substrate contacts, reduce the absorption of dust granule on the mask version, reduce photomask defect, improve processing quality.
Description of drawings
Fig. 1 is one deck chromium thin film that is coated with on glass;
Fig. 2 is the process flow diagram of the chromium pattern that obtains through photoetching process;
Fig. 3 is the mask version that is coated with the chromium pattern;
Fig. 4 is the mask version that the layer of transparent conducting film is provided on the chromium pattern that provides of the utility model;
Fig. 5 is that the utility model optimal design is at chromium pattern growth one deck antireflection film;
Reference numeral: 1-quartz glass 2-chromium thin film pattern
3-nesa coating 4-antireflection film.
Embodiment
For making the technical solution of the utility model and purpose clearer, below in conjunction with drawings and Examples, embodiment combination of the present utility model is described in further detail.
Embodiment one: participate in Fig. 4, this contact exposure mask version comprises a soda glass or quartz glass substrate 1, is coated with the crome metal film above the described glass substrate 1, and photoetching process obtains chromium thin film pattern 2, covers one deck conducting film 3 on the chromium thin film pattern 2.
Embodiment two: present embodiment and embodiment one are basic identical, and special feature is as follows: described glass substrate is square, and the length of side is 200mm, thickness 3-8mm; Described chromium thin film is sputter or is deposited on glassly that thickness is 10-10000nm, and optimum is 100-200nm; Described conducting film is nesa coating, and this nesa coating is transparent indium tin metal oxide (ITO) film, and nesa coating is square, and the length of side is 200mm, and thickness is 10-2000nm, and optimum is 50-100nm.
Embodiment three: at first deposit one deck chromium thin film sees that deposition process shown in Figure 1, optimum is sputtering sedimentation on glass substrate.
Being prepared as follows of the contact exposure mask version of present embodiment: follow spin coating layer of even photoresist on chromium thin film, toast firm photoresist, adopt then laser or electron beam direct with pattern plotter to photoresist, development will be removed by light-struck photoresist, carry out etching again and remove chromium, in conjunction with present embodiment, preferred wet etching obtains the chromium thin film pattern, last stripping photoresist obtains mask version synoptic diagram shown in Figure 3, and chromium thin film thickness is 100-200nm.
Nesa coating on the mask version that the utility model provides is preferably transparent ITO film, conducting film is square, the length of side is 200mm, thickness 50-100nm, need smooth being attached on the aforesaid mask version, the ITO film sticks on the mask version, need prevent from having bubble between ITO film and mask version, and any dust and impurity, produce diffraction phenomena when avoiding exposing, see shown in Figure 4, can also be at chromium thin film pattern growth one deck antireflection film (4) in the present embodiment, and then the ITO film is attached on the antireflection film (4), be more conducive to optimize effect of the present utility model, see shown in Figure 5.
The above only is the technical solution of the utility model; not in order to limit the utility model content; all any modifications of within spirit of the present utility model and principle, making, be equal to and replace and improve and optimizate design proposal etc., all should be included within the protection domain of the present utility model.
Claims (4)
1. a contact exposure mask version comprises a soda glass or quartz glass substrate, it is characterized in that: be coated with the crome metal film above the described glass substrate, photoetching process obtains the chromium thin film pattern, covers one deck conducting film on the chromium thin film pattern.
2. contact exposure mask version as claimed in claim 1 is characterized in that described glass substrate is square, and the length of side is 200mm, thickness 3-8mm.
3. contact exposure mask version as claimed in claim 1 is characterized in that described chromium thin film is sputter or is deposited on the glass substrate that thickness is 100-200nm.
4. contact exposure mask version as claimed in claim 1, it is characterized in that: described conducting film is nesa coating, and this nesa coating is transparent indium tin metal oxide ito thin film, and nesa coating is square, and the length of side is 200mm, thickness is 50-100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220316234 CN203164592U (en) | 2012-07-03 | 2012-07-03 | A contact exposure mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220316234 CN203164592U (en) | 2012-07-03 | 2012-07-03 | A contact exposure mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203164592U true CN203164592U (en) | 2013-08-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220316234 Expired - Fee Related CN203164592U (en) | 2012-07-03 | 2012-07-03 | A contact exposure mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203164592U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407503A (en) * | 2014-11-24 | 2015-03-11 | 上海新微技术研发中心有限公司 | Exposure method and method for manufacturing semiconductor device |
| CN105759562A (en) * | 2016-05-18 | 2016-07-13 | 京东方科技集团股份有限公司 | Photolithography mask as well as manufacturing method and photolithography method thereof |
| CN112650019A (en) * | 2021-01-23 | 2021-04-13 | 烟台正海科技股份有限公司 | Anti-static chromium plate and preparation process thereof |
-
2012
- 2012-07-03 CN CN 201220316234 patent/CN203164592U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407503A (en) * | 2014-11-24 | 2015-03-11 | 上海新微技术研发中心有限公司 | Exposure method and method for manufacturing semiconductor device |
| CN104407503B (en) * | 2014-11-24 | 2016-07-06 | 上海新微技术研发中心有限公司 | Exposure method and method for manufacturing semiconductor device |
| CN105759562A (en) * | 2016-05-18 | 2016-07-13 | 京东方科技集团股份有限公司 | Photolithography mask as well as manufacturing method and photolithography method thereof |
| WO2017197915A1 (en) * | 2016-05-18 | 2017-11-23 | 京东方科技集团股份有限公司 | Photolithography mask, manufacturing method thereof, and photolithography method |
| US10466584B2 (en) | 2016-05-18 | 2019-11-05 | Boe Technology Group Co., Ltd. | Photoetching mask plate, manufacture method thereof, and photoetching method |
| CN105759562B (en) * | 2016-05-18 | 2019-11-12 | 京东方科技集团股份有限公司 | Mask blank and preparation method thereof, photolithography method |
| CN112650019A (en) * | 2021-01-23 | 2021-04-13 | 烟台正海科技股份有限公司 | Anti-static chromium plate and preparation process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130828 Termination date: 20150703 |
|
| EXPY | Termination of patent right or utility model |