CN203117929U - Touch electrode structure - Google Patents
Touch electrode structure Download PDFInfo
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- CN203117929U CN203117929U CN 201220703025 CN201220703025U CN203117929U CN 203117929 U CN203117929 U CN 203117929U CN 201220703025 CN201220703025 CN 201220703025 CN 201220703025 U CN201220703025 U CN 201220703025U CN 203117929 U CN203117929 U CN 203117929U
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Abstract
The utility model relates to a touch electrode structure, which comprises a substrate and an electrode layer which is arranged on the substrate, wherein the electrode layer is divided into an etching area and an non-etching area, the electrode layer in the non-etching area comprises more than two first electrode blocks, more than two second electrode blocks, a first etching prevention optical layer, a second etching prevention optical layer and a circuit layer, more than two first electrode blocks are arranged along the first direction, and every two adjacent first electrode blocks are electrically connected with each other through a first conducting wire; the more than two second electrode blocks are arranged long the second direction, and the second electrode blocks are arranged on two sides of the first conducting wire; the first etching prevention optical layer is arranged on the electrode layer in the non-etching area, and the position, corresponding to the second electrode block, of the first etching prevention optical layer is provided with a through hole; the second etching prevention optical layer is arranged on the first etching prevention optical layer and the substrate, and the second etching prevention optical layer is provided with a hollow area corresponding to the through hole; and the circuit layer is electrically connected with the adjacent second electrode block through the hollow area and the through hole. By adopting the refractive index of the first etching prevention optical layer and the second etching prevention optical layer, the appearance difference between the etching area and the non-etching area after being etched can be alleviated.
Description
Technical field
The utility model relates to touch technology, particularly relates to a kind of touch-control electrode structure.
Background technology
In traditional touch-control electrode structure manufacturing process, topmost step comprises the formation of electrode structure and the formation of line layer, in these two steps, needs respectively to use for the mask of definition electrode pattern with for the mask that defines the line layer join domain.In traditional manufacturing process, mask generally all needs extra step to remove after finishing above fabrication steps.
On the other hand, in order to make the touch-control electrode structure when being applied to touch control display apparatus, have good visual effect, after forming the touch-control sensing electrode structure, need to increase extra optical layers on the touch-control electrode structure usually, to regulate the display effect of contactor control device.
Therefore not only flow process is loaded down with trivial details for traditional touch-control electrode structure manufacturing process, and need pay extra cost aspect the adjustment of display effect.
The utility model content
Based on this, be necessary to provide a kind of touch-control electrode structure, it has less processing step and visual effect preferably.
A kind of touch-control electrode structure comprises:
One substrate;
One electrode layer, be arranged on this substrate, and this electrode layer is divided into an etching region and a non-etching region, and wherein the electrode layer of this non-etching region comprises: plural at least first electrode block of arranging along first direction, and adjacent those first electrode block electrically connects by first lead; At least plural second electrode block of arranging along second direction, described second electrode block is arranged at this first lead both sides respectively;
One first anti-etching optical layers is arranged on the electrode layer of this non-etching region, and this first anti-etching optical layers is formed with through hole corresponding to the position of those second electrode blocks;
One second anti-etching optical layers is arranged on this first anti-etching optical layers and this substrate, and this second prevents that etching optical layers is formed with the hollow out zone corresponding to the position of this through hole;
One line layer be arranged on this second anti-etching optical layers, and this line layer electrically connects the second adjacent electrode block by this hollow out zone and this through hole.
By regulating the refractive index of the first anti-etching optical layers and the second anti-etch layer, can alleviate the difference in appearance that etching after etching district and non-etching region exist.
Description of drawings
Fig. 1 is the manufacturing process flow diagram of the touch-control electrode structure of first embodiment;
Fig. 2 a ~ Fig. 2 f is the corresponding touch-control electrode structure of each step vertical view in the process chart shown in Figure 1; Fig. 2 a ' ~ Fig. 2 f ' is respectively Fig. 2 a ~ Fig. 2 e along the cut-open view of A-A ' direction;
Fig. 2 g is the hierarchical structure figure of the electrode layer of the touch-control electrode structure etching region of first embodiment and non-etching region;
Fig. 3 a is the vertical view of the touch-control electrode structure of second embodiment; Fig. 3 a ' is that Fig. 3 a is along the cut-open view of A-A ' direction;
Fig. 4 is the manufacturing process flow diagram of the touch-control electrode structure of another embodiment;
Fig. 5 a ~ Fig. 5 e is the corresponding touch-control electrode structure of each step vertical view in the process chart shown in Figure 4; Fig. 5 a ' ~ Fig. 5 f ' is respectively Fig. 5 a ~ Fig. 5 e along the cut-open view of A-A ' direction.
Embodiment
Illustrating as Fig. 1, is the manufacturing process flow diagram of the touch-control electrode structure of an embodiment.This manufacturing process flow may further comprise the steps.
S101: form an electrode layer on a substrate.With reference to figure 2a ' and Fig. 2 a, electrode layer 130a is formed on the substrate 110.Wherein substrate 110 can be glass substrate or poly terephthalic acid class plastics (Polyethylene terephthalate, PET) substrate.Substrate 110 can be plane or curve form, to adapt to different touch-control products.Substrate 110 also can be hard substrate maybe can disturb the formula substrate.Electrode layer 130a can adopt nanometer filamentary silver (Silver Nano-Wire, SNW) layer, carbon nano-tube (Carbon nanotube, CNT) layer, Graphene (Graphene) layer, conductive polymer (Conductive Polymer) layer and oxidized metal (ITO, AZO ... Gel) layer waits the material that can have an X-rayed.The mode that forms electrode layer 130 can adopt technologies such as deposition, sputter.
S102: form a protective seam on this electrode layer.For easy oxidized material such as nanometer filamentary silver, protective seam 140 is electrode layer 130a and air insulated, and then helps to improve the oxidation resistance of electrode layer 130a.Simultaneously, because the Nano Silver wire material self has certain density, protective seam 140 can by selecting the material that preferable adhesion is arranged with substrate 110 for use, help to improve the nanometer filamentary silver at the adhesion of substrate 110 by gap and the substrate contacts of nanometer filamentary silver.The material of protective seam adopts the insulating material that can have an X-rayed, as silicon dioxide.The thickness of protective seam is 50nm to 500nm.
S103: form one first anti-etching optical layers on this protective seam.With reference to figure 2b ' and Fig. 2 b, the first anti-etching optical layers 150 is formed on the protective seam 140.The first anti-etching optical layers 150 has the shape of patterning, and it is used for defining conductive electrode patterns at electrode layer 130a.The insulating material that this first anti-etching optical layers 150 can adopt acryl polymkeric substance (Acrylate Polymer) and epoxy resin (Epoxide Resin) etc. to have an X-rayed is made.The mode that forms the first anti-etching optical layers 150 can adopt printing (printing) technology.The thickness of the first anti-etching optical layers is 0.05um to 5um.
S104: this electrode layer that etching is not blocked by this first anti-etching optical layers, this electrode layer after etching is divided into an etching region and a non-etching region.With reference to figure 2c ' and Fig. 2 c, the electrode layer 130a among Fig. 2 b ' and Fig. 2 b is carried out etching, form the electrode layer 130b shown in Fig. 2 c and Fig. 2 c '.In etching process, because the thinner thickness of protective seam 140,140 couples of electrode layer 130a of the permeable protective seam of etching solution carry out etching.Electrode layer 130b shown in Fig. 2 c ' and Fig. 2 c is divided into etching region M and non-etching region N.In the present embodiment, etched electrodes layer 130 adopts incomplete etched technology, namely under the prerequisite that the electrode layer 130b of the electrode layer 130b that guarantees etching region M and non-etching region N is electrically insulated, only etches away the electrode of partially-etched district M.Adopt incomplete etched technology, can avoid the electrode layer aberration of etching region M and non-etching region N excessive.In another embodiment, can adopt complete etched technology.The electrode layer 130b of non-etching region N comprises: plural at least first electrode block of arranging along first direction 132, and the first adjacent electrode block 132 electrically connects by first lead 134; At least plural second electrode block, 136, the second electrode blocks of arranging along second direction 136 are arranged at first lead, 134 both sides respectively.The partial electrode piece of the electrode layer 130b of non-etching region N only is shown among the figure, and actual electrode layer 130b should comprise more multi-electrode piece.Since blocking of the first anti-etching optical layers 150, through after the etching, the electrode structure that electrode layer 130 final formation are identical with the first anti-etching optical layers 150 defined figures.Among Fig. 2 c ' and Fig. 2 c, first electrode block 132, first lead 134 and second electrode block 136 all are positioned at the first anti-etching optical layers 150 times.
S105: form one second anti-etching optical layers on this protective seam and this first anti-etching optical layers.With reference to figure 2d ' and Fig. 2 d; after etching forms electrode layer 130b; on whole base plate 210, cover again and form the second anti-etching optical layers 160; the second anti-etching optical layers 160 is formed on the first anti-etching optical layers 150 and the protective seam 140, and is formed with hollow out zone 162 corresponding to the anti-etching optical layers 160 of second on each second electrode block 136.The insulating material that the second anti-etching optical layers 160 can adopt acryl polymkeric substance (AcrylatePolymer) and epoxy resin (Epoxide Resin) etc. to have an X-rayed is made.The thickness of the second anti-etching optical layers 160 is 0.05um to 5um.
S106: this first anti-etching optical layers and this protective seam of those hollow out location of etching.With reference to figure 2e ' and Fig. 2 e, by first anti-etching optical layers 150 and the protective seam 140 at 162 places, etching hollow out zone, can form through hole 152 in the first anti-etching optical layers 150 and protective seam 140.Through hole 152 forms and through first anti-etching optical layers 150 and the protective seam 140, makes second electrode block, 136 parts expose.It should be noted that for single second electrode block 136, the number of hollow out zone 162 and through hole 152 can adjust the quantity in being not limited to illustrate according to the size of second electrode block 136.In addition hollow out zone 162 and through hole 152 also can be shape such as circle, square in being not limited to illustrate.
S107: form a line layer.With reference to figure 2f ' and Fig. 2 f, line layer 170 is formed on the second anti-etching optical layers 160, and electrically connects with second electrode block 136 that is positioned at non-etching region by hollow out zone 162 and through hole 152.Conductive material or alloy material such as metal material such as silver, aluminium or molybdenum aluminium molybdenum that line layer 170 can adopt tin indium oxide etc. to have an X-rayed.
With reference to shown in figure 2c, Fig. 2 f ' and Fig. 2 f, through the resulting touch-control electrode structure of above-mentioned technology, comprising: substrate 110 simultaneously; Electrode layer 130b, be arranged on this substrate 110, and electrode layer 130b is divided into etching region M and non-etching region N, wherein the electrode layer of non-etching region N comprises: plural at least first electrode block of arranging along first direction 132, and adjacent those first electrode block 132 electrically connects by first lead 134; At least plural second electrode block of arranging along second direction 136, described second electrode block 136 is arranged at this first lead, 134 both sides respectively; Protective seam 140 is arranged on this electrode layer 130b; The first anti-etching optical layers 150 is arranged on the protective seam of non-etching region N, and the first anti-etching optical layers 150 and protective seam 140 are formed with through hole 152 corresponding to the position of second electrode block 136; The second anti-etching optical layers 160 is arranged on protective seam 140 and the first anti-etching optical layers 150, and second prevents that etching optical layers 160 is formed with hollow out zone 162 corresponding to the position of through hole 152; Line layer 170 is arranged on the second anti-etching optical layers 160, and line layer 170 electrically connects the second adjacent electrode block 136 by hollow out zone 162 and through hole 152.Other characteristic of each parts of present embodiment touch-control electrode structure describes in detail in forming technology, so locate to repeat no more.
Please also refer to Fig. 2 f ', Fig. 2 f and Fig. 2 g, the touch-control electrode structure that adopts technology of the present utility model to form is formed with protective seam 140, the second anti-etching optical layers 160 on the electrode layer 130b etching region M; Be formed with protective seam 140, the first anti-etching optical layers 150, the second anti-etching optical layers 160 on the non-etching region N.By regulating the refractive index of protective seam 140, the first anti-etching optical layers 150, the second anti-etching optical layers 160, can alleviate the difference in appearance that etching after etching district M and non-etching region N exist.In one embodiment, the refractive index than the first anti-etching optical layers 150 is big by 0.1 at least than the refractive index of refractive index big 0.1, the second anti-etching optical layers 160 of protective seam 140 at least for the refractive index of the first anti-etching optical layers 150.The refractive index of protective seam 140, the first anti-etching optical layers 150, the second anti-etching optical layers 160 can adjust according to the refractive index of different electrode layer material.In addition, the thickness of protective seam 140 can be to 50nm to 500nm, and this thickness range can guarantee that etching solution more easily permeates when etched electrodes layer 130a; The thickness of the first anti-etching optical layers 150 and the second anti-etching optical layers 160 can be and is 0.05um to 5um, and this thickness range is conducive to guarantee the light transmittance of whole touch-control electrode structure.In addition, than traditional manufacturing process, do not relate to the step of the mask of removing the electrode pattern that is used for the definition electrode layer in the technological process of present embodiment and remove the step that is used for definition through hole position mask, therefore processing step can be still less, the time of processing procedure also can be shorter, can improve the efficient of this technology.
Further with reference to figure 3a ' and Fig. 3 a, in another embodiment of the present utility model, after the touch-control electrode structure that forms as Fig. 2 f and Fig. 2 f ', can further form an optics adjustment layer 180 and be covered on the line layer 170.Optics adjustment layer 180 can be the structure of single layer structure or MULTILAYER COMPOSITE.On the one hand, optics adjustment layer 180 can be used for protecting whole touch-control structure; On the other hand, optics adjustment layer 180 also can play the effect of regulating line layer 170 and whole touch-control structure optical appearance.The thickness of optics adjustment layer 180 is 0.05um to 5um.Optics adjustment layer 280 adopts the insulating material that can adopt acryl polymkeric substance (Acrylate Polymer) and epoxy resin (Epoxide Resin) etc. to have an X-rayed to make.
Illustrate as Fig. 4, be the manufacturing process flow diagram of the touch-control electrode structure of another embodiment.This manufacturing process flow may further comprise the steps.
S201: form an electrode layer on a substrate.With reference to figure 5a ' and Fig. 5 a, electrode layer 230a is formed on the substrate 210.Wherein substrate 210 can be glass substrate or poly terephthalic acid class plastics (Polyethylene terephthalate, PET) substrate.Substrate 110 can be plane or curve form, to adapt to different touch-control products.Substrate 110 also can be hard substrate maybe can disturb the formula substrate.Electrode layer 230a can adopt nanometer filamentary silver (Silver Nano-Wire, SNW) layer, carbon nano-tube (Carbon nanotube, CNT) layer, Graphene (Graphene) layer, conductive polymer (Conductive Polymer) layer and oxidized metal (ITO, AZO ... Gel) layer waits the material that can have an X-rayed.The mode that forms electrode layer 130 can adopt technologies such as deposition, sputter.
S202: form one first anti-etching optical layers on this electrode.With reference to figure 5a ' and Fig. 5 a; the technological process difference that illustrates with Fig. 1 is; when electrode layer adopts oxidized metal (ITO, AZO ... Gel) oxidation resistance such as layer and adhesion are preferably during material; can omit the step that forms protective seam, namely directly form the first corrosion protection optical layers in electrode layer.The first anti-etching optical layers 250 has the shape of patterning, and it is used for defining conductive electrode patterns at electrode layer 230a.Other characteristic of the first anti-etching optical layers 250 is identical with previous embodiment, repeats no more herein.
S203: this electrode layer that etching is not blocked by this first anti-etching optical layers, this electrode layer after etching is divided into an etching region and a non-etching region.With reference to figure 5b ' and Fig. 5 b, the electrode layer 230a among Fig. 5 a ' and Fig. 5 a is carried out etching, form the electrode layer 230b shown in Fig. 5 b ' and Fig. 5 b.Electrode layer 230b shown in 5b ' and Fig. 5 b is divided into etching region M and non-etching region N.Etched electrodes layer 230a can adopt complete etching or incomplete etched technology.The electrode layer 230b of non-etching region N comprises: plural at least first electrode block of arranging along first direction 232, and the first adjacent electrode block 232 electrically connects by first lead 234; At least plural second electrode block, 236, the second electrode blocks of arranging along second direction 236 are arranged at first lead, 234 both sides respectively.The partial electrode piece of the electrode layer 230b of non-etching region N only is shown among the figure, and actual electrode layer 230b should comprise more multi-electrode piece.Since blocking of the first anti-etching optical layers 250, through after the etching, the electrode structure that the final formation of electrode layer 230b is identical with the first anti-etching optical layers 250 defined figures.Among Fig. 5 b ' and Fig. 5 b, first electrode block 232, first lead 234 and second electrode block 236 all are positioned at the first anti-etching optical layers 250 times.
S204: form one second anti-etching optical layers on this first anti-etching optical layers and this substrate.With reference to figure 5c ' and Fig. 5 c, after etching forms electrode layer 230b, on whole base plate 210, cover again and form the second anti-etching optical layers 260, the second anti-etching optical layers 260 is formed on the first anti-etching optical layers 250 and the substrate 210, and is formed with hollow out zone 262 corresponding to the anti-etching optical layers 260 of second on each second electrode block 236.Other characteristic of the second anti-etching optical layers 260 is identical with previous embodiment, repeats no more herein.
S205: this first anti-etching optical layers of this hollow out location of etching.With reference to figure 5d ' and Fig. 5 d, by the first anti-etching optical layers 250 at 262 places, etching hollow out zone, can form through hole 252 in the first anti-etching optical layers 250.Through hole 252 forms and through the first anti-etching optical layers 250, makes second electrode block, 236 parts expose.Hollow out zone 262 is identical with previous embodiment with other characteristic of through hole 252, repeats no more herein.
S206: form a line layer.With reference to figure 5e ' and Fig. 5 e, line layer 270 is formed on the second anti-etching optical layers 260, and electrically connects the second adjacent electrode block 136 by hollow out zone 262 and through hole 252.Other characteristic of line layer 270 is identical with previous embodiment, repeats no more herein.
With reference to shown in figure 5b, Fig. 5 e ' and Fig. 5 e, through the resulting touch-control electrode structure of above-mentioned technology, comprising: substrate 210 simultaneously; Electrode layer 230b, be arranged on this substrate 210, and electrode layer 230b is divided into etching region M and non-etching region N, wherein the electrode layer of non-etching region N comprises: plural at least first electrode block of arranging along first direction 232, and adjacent those first electrode block 232 electrically connects by first lead 234; At least plural second electrode block of arranging along second direction 236, described second electrode block 236 is arranged at this first lead, 234 both sides respectively; The first anti-etching optical layers 250 is arranged on the electrode layer 230b of non-etching region N, and first prevents that etching optical layers 250 is formed with through hole 252 corresponding to the position of second electrode block 236; The second anti-etching optical layers 260 is arranged on the first anti-etching optical layers 250 and the substrate 210, and second prevents that etching optical layers 260 is formed with hollow out zone 262 corresponding to the position of through hole 252; Line layer 270 is arranged on the second anti-etching optical layers 260, and line layer 270 electrically connects the second adjacent electrode block 236 by hollow out zone 262 and through hole 252.In addition, in another embodiment, also can further form an optics at line layer 270 and adjust layer.Other characteristic of each parts of present embodiment touch-control electrode structure describes in detail in forming technology, so locate to repeat no more.
In the various embodiments described above, the electrode of electrode layer adopts square electrode block to be electrically connected and forms, and in other embodiments, electrode block still is prismatic, pentagon or hexagon etc.
The above embodiment has only expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (10)
1. a touch-control electrode structure is characterized in that, comprising:
One substrate;
One electrode layer, be arranged on this substrate, and this electrode layer is divided into an etching region and a non-etching region, and wherein the electrode layer of this non-etching region comprises: plural at least first electrode block of arranging along first direction, and adjacent those first electrode block electrically connects by first lead; At least plural second electrode block of arranging along second direction, described second electrode block is arranged at this first lead both sides respectively;
One first anti-etching optical layers is arranged on the electrode layer of this non-etching region, and this first anti-etching optical layers is formed with through hole corresponding to the position of those second electrode blocks;
One second anti-etching optical layers is arranged on this first anti-etching optical layers and this substrate, and this second prevents that etching optical layers is formed with the hollow out zone corresponding to the position of this through hole;
One line layer be arranged on this second anti-etching optical layers, and this line layer electrically connects the second adjacent electrode block by this hollow out zone and this through hole.
2. touch-control electrode structure according to claim 1 is characterized in that, more is formed with a protective seam on the described electrode layer, and this protective seam is arranged between this electrode layer and this first anti-etching optical layers.
3. touch-control electrode structure according to claim 1 is characterized in that, described line layer is provided with an optics and adjusts layer.
4. touch-control electrode structure according to claim 2 is characterized in that, the thickness of described protective seam is 50nm to 500nm.
5. touch-control electrode structure according to claim 2 is characterized in that, the refractive index of the described first anti-etching optical layers is bigger by 0.1 than the refractive index of described protective seam at least.
6. touch-control electrode structure according to claim 1 or 5 is characterized in that, the refractive index of the described second anti-etching optical layers refractive index than the described first anti-etching optical layers at least is big by 0.1.
7. touch-control electrode structure according to claim 1 is characterized in that, the thickness of the described first anti-etching optical layers is 0.05um to 5um.
8. touch-control electrode structure according to claim 1 is characterized in that, the thickness of the described second anti-etching optical layers is 0.05um to 5um.
9. touch-control electrode structure according to claim 1 is characterized in that, conductive material, metal material or the alloy material that described line layer employing can be had an X-rayed or aforementioned combination.
10. touch-control electrode structure according to claim 1 is characterized in that, the described first anti-etching optical layers material and the described second anti-etching optical layers material are acryl polymkeric substance or epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220703025 CN203117929U (en) | 2012-12-18 | 2012-12-18 | Touch electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201220703025 CN203117929U (en) | 2012-12-18 | 2012-12-18 | Touch electrode structure |
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| CN203117929U true CN203117929U (en) | 2013-08-07 |
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| CN 201220703025 Expired - Fee Related CN203117929U (en) | 2012-12-18 | 2012-12-18 | Touch electrode structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103870043A (en) * | 2012-12-18 | 2014-06-18 | 宸鸿光电科技股份有限公司 | Touch electrode structure and manufacturing process thereof |
| CN103941948A (en) * | 2014-04-28 | 2014-07-23 | 山东华芯富创电子科技有限公司 | Capacitance type touch panel and manufacturing method thereof |
-
2012
- 2012-12-18 CN CN 201220703025 patent/CN203117929U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103870043A (en) * | 2012-12-18 | 2014-06-18 | 宸鸿光电科技股份有限公司 | Touch electrode structure and manufacturing process thereof |
| CN103941948A (en) * | 2014-04-28 | 2014-07-23 | 山东华芯富创电子科技有限公司 | Capacitance type touch panel and manufacturing method thereof |
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Granted publication date: 20130807 Termination date: 20181218 |