CN203063207U - Medium-high temperature solar energy selective absorbing coating - Google Patents
Medium-high temperature solar energy selective absorbing coating Download PDFInfo
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- CN203063207U CN203063207U CN 201320039698 CN201320039698U CN203063207U CN 203063207 U CN203063207 U CN 203063207U CN 201320039698 CN201320039698 CN 201320039698 CN 201320039698 U CN201320039698 U CN 201320039698U CN 203063207 U CN203063207 U CN 203063207U
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Abstract
The utility model discloses a medium-high temperature solar energy selective absorbing coating which sequentially comprises five layers including an infrared high reflecting layer, a non-proliferation blocking layer, a high metal fill factor absorbing layer, a low metal fill factor absorbing layer and an anti-reflection layer from the bottom layer to the surface layer, wherein the infrared high reflecting layer is a Cu film and has the thickness of 100-250nm; the non-proliferation blocking layer is a TiN film and has the thickness of 5-15nm; the high metal fill factor absorbing layer is a first Ti-AlN film and has the thickness of 20-50nm; the low metal fill factor absorbing layer is a second Ti-AlN film and has the thickness of 20-50nm; and the anti-reflection layer is an AlN film and has the thickness of 50-150nm. The composite film layer is compact in structure, has very strong high-temperature stability, has the absorptivity of more than 95%, is good in absorption and lower in emission under the condition of medium-high temperature higher than 200 DEG C, and is good in thermal stability.
Description
Technical field
The utility model relates to the solar energy optical-thermal applied technical field, is specifically related to a kind of middle high temperature solar energy selective absorption coating.
Background technology
Coating for selective absorption of sunlight spectrum is to Visible-to-Near InfaRed band spectrum absorptivity height, and is low to the infrared band spectral absorption, is the key technology that solar radiant energy is converted to heat energy utilization.At present, the range of application of solar energy heat collection pipe mainly contains low temperature (less than 100 ℃), middle temperature (100～250 ℃), high temperature (more than 250 ℃).What application was more at present is the low temperature thermal-collecting tube, if in higher temperature (more than 200 ℃) work down, the structure of coating is destroyed easily, and the coating overall performance changes.
At present, what domestic application was more is the Al-AlN absorber coatings, and namely absorbed layer is fill factor, curve factor with Al, and AlN is medium, in low temperature range photo-thermal conversion performance is preferably arranged.Also have the film system of the SS-AlN of composition gradual change in addition, above-mentioned film is to adopt interference structure, makes thermal stability improve.When but above film tied up to the temperature rising, emissivity also improved thereupon, and heat waste increases, and the thermal efficiency descends.
High temperature solar energy selective absorption coating is in desalinization in a kind of, and fields such as solar electrical energy generation have widely uses.
Therefore we need a kind of under middle hot conditions, good absorbing, launch low, and the good solar selectively absorbing coating of thermal stability.
The utility model content
The purpose of this utility model is to provide a kind of middle high temperature solar energy selective absorption coating, to Visible-to-Near InfaRed band spectrum absorptivity height, low to the infrared band spectral absorption, be applicable to middle high temperature (100 ℃-500 ℃) operating temperature thermal-collecting tube, coating absorptivity height, emissivity is low, and thermal stability is good, overcomes deficiencies such as heat waste rising at high temperature.
The purpose of this utility model is to provide a kind of middle high temperature solar energy selective absorption coating, this coating comprises five layers, is followed successively by infrared high reflection layer, non-proliferation barrier layer, high metal filled factor absorbed layer, low metal filled factor absorbed layer and antireflection layer from the bottom to the top layer; Described infrared high reflection layer is the Cu film, and thickness is at 100～250nm; Described non-proliferation barrier layer is the TiN film, and thickness is at 5～15nm; The metal filled factor absorbed layer of described height is a Ti-AlN film, and thickness is at 20～50nm; Described low metal filled factor absorbed layer is the 2nd Ti-AlN film, and thickness is at 20～50nm; Described medium antireflection layer is the AlN film, and thickness is 50～150nm.
The utility model adopts above technical scheme to have following technique effect: (1) the utility model is to adopt the Ti target material, the NEW TYPE OF COMPOSITE rete of developing, and compact structure has very strong high-temperature stability, and the rete absorptivity reaches more than 95%.(2) coating for selective absorption that provides of the utility model is by infrared high reflection layer, TiN film non-proliferation barrier layer, a Ti-AlN, and the 2nd Ti-AlN interferes biabsorption layer and AlN ceramic structure antireflection layer.Under middle high temperature (greater than 200 ℃) condition, good absorption and lower emission are arranged, and thermal stability is good.(3) stability of rete is high, and after 12 hours, significant change does not take place its rete microscopic appearance in the vacuum annealing of 500 degrees centigrade of processes, the structure quite stable of rete, and significant change does not take place in its absorptivity and emissivity.(4) preparation method of the present utility model is simply pollution-free, and is repeatable strong, is suitable for suitability for industrialized production.
Description of drawings
Fig. 1 is the structural representation of coating for selective absorption.
Among the figure: 1 is infrared high reflection layer, and 2 is the non-proliferation barrier layer, and 3 is high metal filled factor absorbed layer, and 4 are low metal filled factor absorbed layer, and 5 is antireflection layer.
The specific embodiment
The utility model on the basis of multiple film structure, is finished this utility model through a large amount of experiments.
Be described in further detail below in conjunction with the utility model of Fig. 1, following examples only are used for explanation the utility model, and unrestricted the utility model.
As shown in Figure 1, structural representation for high temperature solar energy selective absorption coating in of the present utility model, from bottom to top comprise infrared high reflection layer 1 successively, non-proliferation barrier layer 2, high metal filled factor absorbed layer 3, low metal filled factor absorbed layer 4, antireflection layer 5. wherein infrared reflecting layer is the Cu layer, the non-proliferation barrier layer is the TiN layer, and high metal filled factor absorbed layer and low metal filled factor absorbed layer are respectively a Ti-AlN and the 2nd Ti-AlN rete, and antireflection layer is the AlN rete
Embodiment 1:
The utility model adopts the following steps preparation:
Step 1: preparing the infrared high reflection layer of ground floor through the matrix after washed with de-ionized water and the oven dry;
Adopt magnetically controlled sputter method, simple metal is the Cu target, with Ar as sputter gas.Earlier vacuum chamber is evacuated to 3.0 * 10 in advance before the operation of this operation
-3Pa～5 * 10
-3Pa feeds gas Ar as sputter gas, and regulating operation sputter pressure is 0.15Pa～0.4Pa, utilizes the sputter mode to prepare, and coating layer thickness is the Cu film of 100nm～250nm.
Step 2: at ground floor coating preparation second layer non-proliferation barrier layer;
Adopt metal Ti target magnetic control sputtering method, reacting gas is N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 60～80sccm, N
2Flow be 30-60sccm, and the flow-rate ratio of argon gas and nitrogen is 1.5～1:1, regulating operation pressure is 0.15Pa～0.4Pa, opens the Ti target, preparation one deck TiN on infrared high reflection layer, thickness is 5nm～15nm.
Step 3: at the metal filled factor absorbed layer of second layer coating preparation the 3rd floor height;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 60～80sccm, N
2Flow at 80～150sccm, and the flow-rate ratio of its argon gas and nitrogen is 1:2～1.5, regulating operation pressure is 0.15Pa～0.4Pa, open Ti target and Al target, at TiN non-proliferation barrier layer preparation the one Ti-AlN film, thickness is 20nm～50nm, and the ratio X of the volume of the metal filled factor of Ti in this Ti-AlN film and the volume of a Ti-AlN film is 40%～60%.
Step 4: at the 4th layer low metal filled factor absorbed layer of the 3rd layer of coating preparation;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 60～80sccm, N
2Flow at 80～150sccm, and the flow-rate ratio of its argon gas and nitrogen is 1:2～1:1, regulating operation pressure is 0.15Pa～0.4Pa, opens Ti target and Al target, deposits the 2nd Ti-AlN film, its thickness is 20～50nm; The percent by volume of metal filled factor Ti little than in the Ti-AlN film in this 2nd Ti-AlN film, the ratio Y of the volume of the metal filled factor of Ti in its 2nd Ti-AlN film and the volume of the 2nd Ti-AlN film is 20～40%, and the ratio of X and Y is to form interference effect between 3～1.5:1, two absorbed layers, improves absorptivity to a great extent.
Step 5: at the 4th layer of coating preparation layer 5 antireflection layer; Adopt metal A l target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 60～80sccm, N
2Flow at 50～100sccm, and the flow-rate ratio of its argon gas and nitrogen is 2～1:2, regulating operation pressure is 0.15Pa～0.4Pa, opens the Al target, at the 2nd Ti-AlN film preparation AlN antireflection layer, thickness is 50～150nm.Antireflection layer possesses anti-reflection and effect non-oxidizability.
Embodiment 2:
A kind of solar selectively absorbing coating comprises that five coatings are the infrared high reflection layer of ground floor, second layer non-proliferation barrier layer, the metal filled factor absorbed layer of the 3rd floor height, the 4th layer low metal filled factor absorbed layer, layer 5 antireflection layer.The preparation process of this solar selectively absorbing coating is as follows:
Step 1: preparing the infrared high reflection layer of ground floor through the matrix (borosilicate 33 glass basis) after washed with de-ionized water and the oven dry;
Adopt the simple metal target, magnetically controlled sputter method, simple metal is the Cu target, with Ar as sputter gas.Elder generation remains on 5 * 10 with the vacuum pressure of vacuum chamber before the operation of this operation
-3Pa feeds gas Ar as sputter gas, and regulating operation sputter pressure is 0.36Pa ~ 0.38Pa, utilizes the sputter mode to prepare, and uses electron lens to record thickness and is 230nm.
Step 2: at ground floor coating preparation second layer non-proliferation barrier layer;
Adopt the metal Ti target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 78 ~ 80sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.36Pa ~ 0.38Pa, opens the Ti target, preparation one deck TiN on infrared reflecting layer, thickness is 15nm.
Step 3: at the metal filled factor absorbed layer of second layer coating preparation the 3rd floor height;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 78 ~ 80sccm, N
2Flow at 106～108sccm, regulating operation pressure is 0.36Pa ~ 0.38Pa, opens Ti target and Al target, at TiN non-proliferation barrier layer preparation the one Ti-AlN film, thickness is 40nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and a Ti-AlN film is 0.49.
Step 4: at the 4th layer low metal filled factor absorbed layer of the 3rd layer of coating preparation;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 78 ~ 80sccm, N
2Flow at 110 ~ 112sccm, regulating operation pressure is 0.36Pa ~ 0.38Pa, open Ti target and Al target, at the metal filled factor absorbed layer preparation of height one deck the 2nd Ti-AlN film, thickness is 45nm, wherein the metal filled factor of Ti volume and the volume ratio between the volume of the 2nd Ti-AlN film be 0.26.
Step 5: at the 4th layer of coating preparation layer 5 antireflection layer;
Adopt metal A l target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 78 ~ 80sccm, N
2Flow at 60 ~ 62sccm, regulating operation pressure is 0.36Pa ~ 0.38Pa, opens the Al target, at the 2nd Ti-AlN film preparation AlN antireflection layer, thickness is 100nm.
The performance of the solar selectively absorbing coating of this examples preparation is as follows: the absorptivity of coating is α=95%, and emissivity is ε=0.045(80 ℃).Carry out annealing in process, 3.0 * 10
-3Under the Pa vacuum, after 400 ℃ of annealing in hour, the coating absorptivity is α=95.5%, and emissivity is ε=0.038, and heat waste is 0.518; 1.0 * 10
-3Under the Pa vacuum, after one hour, the coating absorptivity is α=95.7% through 500 ℃ of annealing, and emissivity is ε=0.037(80 ℃), heat waste is 0.476.
Embodiment 3:
Prepare a kind of solar selectively absorbing coating, comprise that five coatings are the infrared high reflection layer of ground floor, second layer non-proliferation barrier layer, the metal filled factor absorbed layer of the 3rd floor height, the 4th layer low metal filled factor absorbed layer, layer 5 antireflection layer.Preparation process is as follows:
Step 1: preparing the infrared high reflection layer of ground floor through the matrix (stainless steel base) after washed with de-ionized water and the oven dry;
Adopt the simple metal target, magnetically controlled sputter method, simple metal is the Cu target, with Ar as sputter gas.Elder generation is evacuated to 5 * 10 with the vacuum pressure of vacuum chamber before the operation of this operation
-3Pa feeds gas Ar as sputter gas, and regulating operation sputter pressure is 0.22Pa ~ 0.25Pa, utilizes the sputter mode to prepare, and thickness is 240nm.
Step 2: at ground floor coating preparation second layer non-proliferation barrier layer;
Adopt the metal Ti target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 70 ~ 72sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.23Pa ~ 0.25Pa, opens the Ti target, the voltage of regulating metallic target is 400 ~ 410V, sputtering current is 40A, preparation one deck TiN on infrared reflecting layer, thickness is 14nm.
Step 3: at the metal filled factor absorbed layer of second layer coating preparation the 3rd floor height;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 70 ~ 72sccm, N
2Flow be 130 ~ 132sccm, regulating operation pressure is 0.23Pa ~ 0.25Pa, opens Ti target and Al target, at TiN non-proliferation barrier layer preparation the one Ti-AlN film, thickness is 36nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and a Ti-AlN film is 0.45.
Step 4: at the 4th layer low metal filled factor absorbed layer of the 3rd layer of coating preparation;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 70 ~ 72sccm, N
2Flow at 110 ~ 112sccm, regulating operation pressure is 0.23Pa ~ 0.25Pa, open Ti target and Al target, at the metal filled factor absorbed layer preparation of height one deck the 2nd Ti-AlN film, thickness is 42nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and the 2nd Ti-AlN film is 0.22.
Step 5: at the 4th layer of coating preparation layer 5 antireflection layer;
Adopt metal A l target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 70 ~ 72sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.23Pa ~ 0.25Pa, opens the Al target, at the 2nd Ti-AlN film preparation AlN antireflection layer, thickness is 105nm.
The performance of the solar selectively absorbing coating of this examples preparation is as follows: the absorptivity α of coating=95.3%, emissivity=0.040(80 ℃), carry out annealing in process, 3.0 * 10
-3Under the Pa vacuum, after 400 ℃ of annealing in hour, the coating absorptivity is α=95.6%, and emissivity is ε=0.038(80 ℃), heat waste is 0.512.
Embodiment 4:
Prepare a kind of solar selectively absorbing coating, comprise that five coatings are the infrared high reflection layer of ground floor, second layer non-proliferation barrier layer, the metal filled factor absorbed layer of the 3rd floor height, the 4th layer low metal filled factor absorbed layer, layer 5 antireflection layer.Preparation process is as follows:
Step 1: preparing the infrared high reflection layer of ground floor through the matrix (glass basis) after washed with de-ionized water and the oven dry;
Adopt the simple metal target, magnetically controlled sputter method, simple metal is the Cu target, with Ar as sputter gas.Elder generation remains on 5 * 10 with the vacuum pressure of vacuum chamber before the operation of this operation
-3Pa feeds gas Ar as sputter gas, and the flow of Ar is 74 ~ 76sccm, and regulating operation sputter pressure is 0.27Pa ~ 0.29Pa, utilizes the sputter mode to prepare, and thickness is 235nm.
Step 2: at ground floor coating preparation second layer non-proliferation barrier layer;
Adopt the metal Ti target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.27Pa ~ 0.29Pa, opens the Ti target, preparation one deck TiN on infrared reflecting layer, thickness is 14nm.
Step 3: at the metal filled factor absorbed layer of second layer coating preparation the 3rd floor height;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 120～122sccm, regulating operation pressure is 0.27Pa ~ 0.29Pa, opens Ti target and Al target, at TiN non-proliferation barrier layer preparation the one Ti-AlN film, thickness is 38nm, and wherein the volume between the volume of the volume of the metal filled factor of Ti and a Ti-AlN film is 0.47.
Step 4: at the 4th layer low metal filled factor absorbed layer of the 3rd layer of coating preparation;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow at 115 ~ 117sccm, regulating operation pressure is 0.27Pa ~ 0.29Pa, open Ti target and Al target, at the metal filled factor absorbed layer preparation of height one deck the 2nd Ti-AlN film, thickness is 43nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and the 2nd Ti-AlN film is 0.24.
Step 5: at the 4th layer of coating preparation layer 5 antireflection layer;
Adopt metal A l target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.27Pa ~ 0.29Pa, opens the Al target, at the 2nd Ti-AlN film preparation AlN antireflection layer, thickness is 102nm.
The performance of the solar selectively absorbing coating of this examples preparation is as follows: the absorptivity of coating is α=95.6%, and emissivity is ε=0.043(80 ℃).Carry out annealing in process, 3.0 * 10
-3Under the Pa vacuum, after 400 ℃ of annealing in hour, the coating absorptivity is α=95.9%, and emissivity is ε=0.035(80 ℃), heat waste is 0.481.
Embodiment 5:
Prepare a kind of solar selectively absorbing coating, comprise that five coatings are the infrared high reflection layer of ground floor, second layer non-proliferation barrier layer, the metal filled factor absorbed layer of the 3rd floor height, the 4th layer low metal filled factor absorbed layer, layer 5 antireflection layer.
Step 1: preparing the infrared high reflection layer of ground floor through the matrix after washed with de-ionized water and the oven dry;
Adopt the simple metal target, magnetically controlled sputter method, simple metal is the Cu target, with Ar as sputter gas.Elder generation remains on 5 * 10 with the vacuum pressure of vacuum chamber before the operation of this operation
-3Pa feeds gas Ar as sputter gas, and the flow of Ar is 74 ~ 76sccm, and regulating operation sputter pressure is 0.29Pa ~ 0.31Pa, utilizes the sputter mode to prepare, and thickness is 250nm.
Step 2: at ground floor coating preparation second layer non-proliferation barrier layer;
Adopt the metal Ti target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.29Pa ~ 0.31Pa, opens the Ti target, preparation one deck TiN on infrared reflecting layer, thickness is 15nm.
Step 3: at the metal filled factor absorbed layer of second layer coating preparation the 3rd floor height;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 120～122sccm, regulating operation pressure is 0.29Pa ~ 0.31Pa, opens Ti target and Al target, at TiN non-proliferation barrier layer preparation the one Ti-AlN film, thickness is 40nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and a Ti-AlN film is 0.48.
Step 4: at the 4th layer low metal filled factor absorbed layer of the 3rd layer of coating preparation;
Adopt metal Ti target and Al target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow at 115 ~ 117sccm, regulating operation pressure is 0.29Pa ~ 0.31Pa, open Ti target and Al target, at the metal filled factor absorbed layer preparation of height one deck the 2nd Ti-AlN film, thickness is 50nm, and wherein the volume ratio between the volume of the volume of the metal filled factor of Ti and the 2nd Ti-AlN film is 0.23.
Step 5: at the 4th layer of coating preparation layer 5 antireflection layer;
Adopt metal A l target, magnetically controlled sputter method, reacting gas are N
2Gas.Feed Ar and N
2Mist, the flow of Ar are 74 ~ 76sccm, N
2Flow be 60 ~ 62sccm, regulating operation pressure is 0.29Pa ~ 0.31Pa, opens the Al target, at the 2nd Ti-AlN film preparation AlN antireflection layer, thickness is 100nm.
The performance of the solar selectively absorbing coating of this examples preparation is as follows: the absorptivity of coating is α=94.5%, and emissivity is that ε=0.032. carries out annealing in process, 3.0 * 10
-3Under the Pa vacuum, after 400 ℃ of annealing in hour, the coating absorptivity is α=94.8%, and emissivity is ε=0.030(80 ℃), heat waste is 0.492.
Claims (2)
1. high temperature solar energy selective absorption coating in a kind, it is characterized in that: this coating comprises five layers, is followed successively by infrared high reflection layer, non-proliferation barrier layer, high metal filled factor absorbed layer, low metal filled factor absorbed layer and antireflection layer from the bottom to the top layer; Described infrared high reflection layer is the Cu film; Described non-proliferation barrier layer is the TiN film; The metal filled factor absorbed layer of described height is a Ti-AlN film; Described low metal filled factor absorbed layer is the 2nd Ti-AlN film; Described antireflection layer is the AlN film.
As claimed in claim 1 a kind of in high temperature solar energy selective absorption coating, it is characterized in that: described infrared high reflection layer Cu film thickness is 100～250nm; Described non-proliferation barrier layer TiN film thickness is 5～15nm; Metal filled factor absorbed layer the one Ti-AlN film thickness of described height is 20～50nm; Described low metal filled factor absorbed layer the 2nd Ti-AlN film thickness is 20～50nm; Described antireflection layer AlN film thickness is 50～150nm.
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| CN107490204A (en) * | 2017-08-15 | 2017-12-19 | 山东圣泉新材料股份有限公司 | A kind of solar selectively absorbing coating, preparation method and photothermal conversion device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107490204A (en) * | 2017-08-15 | 2017-12-19 | 山东圣泉新材料股份有限公司 | A kind of solar selectively absorbing coating, preparation method and photothermal conversion device |
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