CN102928087A - Flat spectrum absorption layer for detectors and manufacture method thereof - Google Patents
Flat spectrum absorption layer for detectors and manufacture method thereof Download PDFInfo
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- CN102928087A CN102928087A CN2012104290540A CN201210429054A CN102928087A CN 102928087 A CN102928087 A CN 102928087A CN 2012104290540 A CN2012104290540 A CN 2012104290540A CN 201210429054 A CN201210429054 A CN 201210429054A CN 102928087 A CN102928087 A CN 102928087A
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- Prior art keywords
- pmnt
- absorption layer
- wafer
- face
- chrome
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001228 spectrum Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000001659 ion-beam spectroscopy Methods 0.000 claims abstract description 6
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 6
- 229920000334 poly[3-(3'-N,N,N-triethylamino-1-propyloxy)-4-methylthiophene-2,5-diyl hydrochloride] polymer Polymers 0.000 claims description 49
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000003595 spectral effect Effects 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 description 3
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005616 pyroelectricity Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a flat spectrum absorption layer for detectors and a manufacture method thereof. The absorption layer comprises a first metal layer, a second metal layer and a third metal layer from top to bottom. The absorption layer is characterized in that the first metal layer is a chrome-nickel alloy layer with the square resistance of 9.5-10.0 omega/square, the second metal layer is made of metallic nickel with the film thickness of 75-85nm, and the third metal layer is made of metallic chrome with the film thickness of 18-22nm. According to the manufacture process, the flat wide spectrum absorption layer is manufactured by means of process technologies of photoetching imaging, thermal evaporation and ion beam sputtering. The process method for manufacturing the absorption layer is simple in process, is compatible with a standard semiconductor process, facilitates process integration, and is suitable for unit, array and area array detectors. The absorption layer has the advantages of being firm in adhesion, good in repeatability, wide in absorbed waveband, flat in spectrum, high in absorption rate, small in specific heat capacity and excellent in heat transfer performance. Besides, the absorption layer can serve as an electrode and is suitable for thermal infrared detectors.
Description
Technical field:
The present invention relates to optical thin film element, be specifically related to the smooth detector of a kind of spectrum absorption layer and preparation method thereof.
Background technology:
Non-refrigeration thermosensitive type detector has the plurality of advantages such as working and room temperature does not need refrigeration system, compact conformation, reliability is high, spectral response is wide and spectrum is smooth, technique is simple, cheap, can be widely used in the fields such as national defence, industry, medical science and scientific research, such as can be used for all many-sides such as intrusion alarm, security monitoring, fireproof alarming, non-contact temperature measuring, commercial production monitoring, infrared imaging, the auxiliary driving of aircraft vehicle amount, medical diagnosis, spectral analysis.When infrared radiation incides on the thermosensitive type non-refrigerated infrared detector, infrared radiation is detected the device absorption and causes that detector temperature changes, the in most cases variation of temperature can cause that the detector electrical parameter changes (such as resistance value, spontaneous polarization strength etc.), thereby realizes the detection to infrared radiation.The absorption layer of non-refrigerated infrared detector not only directly affects explorer response rate and detectivity to the absorption characteristic of infrared radiation, has also determined the spectral response characteristic of detector.
At present the absorption layer of non-refrigerated infrared detector exists and adheres to insecure or absorption bands is narrow and standard semiconductor technique is incompatible, is difficult to use in the shortcomings such as alignment and planar array detector.
Summary of the invention:
The objective of the invention is to propose that a kind of spectrum is smooth, broadband absorbent layer structure and manufacturing process thereof.Solution non-refrigerated infrared detector infrared absorption layer adheres to insecure or absorption bands is narrow and standard semiconductor technique is incompatible, is difficult to use in the problem of alignment and planar array detector.
The invention discloses the smooth absorbent layer structure of a kind of spectrum and manufacturing process thereof, it is comprised of chrome-nickel alloy layer 1, thin nickel metal film 2 and chromium metallic film 3, it is characterized in that: absorption layer sequentially is followed successively by chrome-nickel alloy layer 1, thin nickel metal film 2 and chromium metallic film 3 by the incident of incident radiation, wherein:
Described chrome-nickel alloy layer 1 is that square resistance is the chrome-nickel alloy layer of 9.5 Ω/-10.0 Ω/;
Described thin nickel metal film 2 is the metallic nickel of 75nm-85nm for thickness;
Described chromium metallic film 3 is that thickness is the crome metal of 18nm-22nm;
The absorbent layer structure that spectrum provided by the present invention is smooth is realized by following concrete processing step:
1) absorption layer that spectrum is smooth is produced on the Mn-PMNT wafer, and its two surfaces are labeled as respectively A face and B face.To Mn-PMNT wafer A face carry out mechanical reduction smooth and the polishing.
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film (thickness 18nm-22nm) and the thin nickel metal film (thickness 75nm-85nm) of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.
4) at Mn-PMNT wafer A face photolithography patterning.
5) at the technique deposit chrome-nickel alloy layer of Mn-PMNT wafer A face employing thermal evaporation, chrome-nickel alloy absorption layer square resistance is 9.5 Ω/-10.0 Ω/.Floating glue cleans.
6) at Mn-PMNT wafer A face photolithography patterning, form etching mask.
7) adopt the technique of argon ion etching to etch shape and structure and the size of electrode at Mn-PMNT wafer A face.Floating glue cleans.
The invention has the advantages that: the advantages such as absorption layer has adhesion-tight, good reproducibility, absorption bands is wide and smooth, absorptivity is high, specific heat capacity is little, heat transfer property is good, absorption layer can doublely be done electrode simultaneously, is suitable as the absorption layer of thermal infrared detector.
Description of drawings:
Fig. 1 is absorbent layer structure figure, 1. chrome-nickel alloy layers, 2. thin nickel metal film, 3. chromium metallic films among the figure.
Embodiment:
Below in conjunction with accompanying drawing, by instantiation the present invention is described in further details, but protection scope of the present invention is not limited to following example.
Example one
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, adopted smooth wide spectral absorption structural design provided by the present invention.Specifically realize by following steps.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning＜111〉direction polarization.To Mn-PMNT wafer A face carry out mechanical reduction smooth and the polishing.Wet etching Mn-PMNT wafer A face is to remove defective and damage.
(2) deposit infrared absorption layer and etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 18nm wherein, nickel metal film thickness 75nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) at the technique deposit chrome-nickel alloy absorption layer of Mn-PMNT wafer A face employing thermal evaporation, chrome-nickel alloy absorption layer square resistance is 9.5 Ω/.Floating glue cleans.
6) at Mn-PMNT wafer surface photolithography patterning, form etching mask.
7) adopt the technique of argon ion etching to etch structure and the size of electrode at Mn-PMNT wafer A face.Floating glue cleans.
Example two
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, adopted smooth wide spectral absorption structural design provided by the present invention.Specifically realize by following steps.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning＜111〉direction polarization.To Mn-PMNT wafer A face carry out mechanical reduction smooth and the polishing.Wet etching Mn-PMNT wafer A face is to remove defective and damage.
(2) deposit infrared absorption layer and etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 20nm wherein, nickel metal film thickness 80nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) at the technique deposit chrome-nickel alloy absorption layer of Mn-PMNT wafer A face employing thermal evaporation, chrome-nickel alloy absorption layer square resistance is 9.8 Ω/.Floating glue cleans.
6) at Mn-PMNT wafer surface photolithography patterning, form etching mask.
7) adopt the technique of argon ion etching to etch structure and the size (structure of electrode and size) of chrome-nickel alloy at Mn-PMNT wafer A face.Floating glue cleans.
Example three
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, adopted smooth wide spectral absorption structural design provided by the present invention.Specifically realize by following steps.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning＜111〉direction polarization.To Mn-PMNT wafer A face carry out mechanical reduction smooth and the polishing.Wet etching Mn-PMNT wafer A face is to remove defective and damage.
(2) deposit infrared absorption layer and etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 22nm wherein, nickel metal film thickness 85nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) at the technique deposit chrome-nickel alloy absorption layer of Mn-PMNT wafer A face employing thermal evaporation, chrome-nickel alloy absorption layer square resistance is 10.0 Ω/.Floating glue cleans.
6) at Mn-PMNT wafer surface photolithography patterning, form etching mask.
7) adopt structure and the size of the process electrode of argon ion etching at Mn-PMNT wafer A face.Floating glue cleans.
Claims (2)
1. detector absorption layer that spectrum is smooth, it is comprised of chrome-nickel alloy layer (1), thin nickel metal film (2) and chromium metallic film (3), it is characterized in that: absorption layer sequentially is followed successively by chrome-nickel alloy layer (1), thin nickel metal film (2) and chromium metallic film (3) by the incident of incident radiation, wherein:
Described chrome-nickel alloy layer (1) is that square resistance is the chrome-nickel alloy layer of 9.5 Ω/-10.0 Ω/;
Described thin nickel metal film (2) is the metallic nickel of 75nm-85nm for thickness;
Described chromium metallic film (3) is that thickness is the crome metal of 18nm-22nm.
2. make the preparation method that the smooth detector of spectrum as claimed in claim 1 is used absorption layer for one kind, it is characterized in that being undertaken by following technological process:
1) absorption layer that spectrum is smooth is produced on the Mn-PMNT wafer, and its two surfaces are labeled as respectively A face and B face.To Mn-PMNT wafer A face carry out mechanical reduction smooth and the polishing;
2) clean the Mn-PMNT wafer, at A face photolithography patterning;
3) adopt the chromium metallic film of technique deposition thickness 18nm-22nm of ion beam sputtering and the chromium metallic film of thickness 75nm-85nm at Mn-PMNT wafer A face, floating glue cleans;
4) at Mn-PMNT wafer A face photolithography patterning;
5) at the technique deposit absorption layer of Mn-PMNT wafer A face employing thermal evaporation, the square resistance of absorption layer is the chrome-nickel alloy layer of 9.5 Ω/-10.0 Ω/, and floating glue cleans;
6) at Mn-PMNT wafer A face photolithography patterning, form etching mask;
7) adopt the technique of argon ion etching to etch the chrome-nickel alloy electrode structure at Mn-PMNT wafer A face, floating glue cleans.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104290540A CN102928087A (en) | 2012-11-01 | 2012-11-01 | Flat spectrum absorption layer for detectors and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104290540A CN102928087A (en) | 2012-11-01 | 2012-11-01 | Flat spectrum absorption layer for detectors and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102928087A true CN102928087A (en) | 2013-02-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104290540A Pending CN102928087A (en) | 2012-11-01 | 2012-11-01 | Flat spectrum absorption layer for detectors and manufacture method thereof |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103852171A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Absorbing layer structure for non-refrigeration long-wave infrared detector |
| CN105300529A (en) * | 2015-11-19 | 2016-02-03 | 电子科技大学 | Absorption layer for spectrum flat pyroelectric detector and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072864A (en) * | 1976-12-20 | 1978-02-07 | International Business Machines Corporation | Multilayered slant-angle thin film energy detector |
| CN102529211A (en) * | 2011-12-22 | 2012-07-04 | 电子科技大学 | Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof |
| CN202956191U (en) * | 2012-11-01 | 2013-05-29 | 中国科学院上海技术物理研究所 | Absorbed layer with flat spectrum for detector |
-
2012
- 2012-11-01 CN CN2012104290540A patent/CN102928087A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072864A (en) * | 1976-12-20 | 1978-02-07 | International Business Machines Corporation | Multilayered slant-angle thin film energy detector |
| CN102529211A (en) * | 2011-12-22 | 2012-07-04 | 电子科技大学 | Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof |
| CN202956191U (en) * | 2012-11-01 | 2013-05-29 | 中国科学院上海技术物理研究所 | Absorbed layer with flat spectrum for detector |
Non-Patent Citations (2)
| Title |
|---|
| FABIO ALVES ET AL.: "Highly absorbing nano-scale metal films for terahertz applications", 《OPTICAL ENGINEERING》 * |
| 刘林华等: "新型热释电材料及其在红外探测器中的应用", 《红外与激光工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103852171A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Absorbing layer structure for non-refrigeration long-wave infrared detector |
| CN105300529A (en) * | 2015-11-19 | 2016-02-03 | 电子科技大学 | Absorption layer for spectrum flat pyroelectric detector and preparation method |
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Application publication date: 20130213 |