CN202939398U - Thin film transistor array substrate and display device - Google Patents
Thin film transistor array substrate and display device Download PDFInfo
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- CN202939398U CN202939398U CN 201220696955 CN201220696955U CN202939398U CN 202939398 U CN202939398 U CN 202939398U CN 201220696955 CN201220696955 CN 201220696955 CN 201220696955 U CN201220696955 U CN 201220696955U CN 202939398 U CN202939398 U CN 202939398U
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Abstract
The embodiment of the utility model provides a thin film transistor array substrate and a display device, and relates to the field of display technique. When a thin film transistor and a data line are disconnected, repair of connection between the thin film transistor and the data line can be conducted, the yield of the thin film transistor array substrate is improved, and stability of the thin film transistor array substrate is improved. The thin film transistor array substrate comprises a substrate body, a grid line, a public electrode wire, gate insulator layers, source layers, source electrodes, drain electrodes, data lines and pixel electrode layers, wherein the grid line and the public electrode wire are arranged on the substrate body, the gate insulator layers are arranged on the grid line and the public electrode wire, and the source layers are arranged on the gate insulator layers. The source electrodes, the drain electrodes, the data lines and the pixel electrode layers are arranged on the source layers, the source electrodes contact the source layers, the drain electrodes contact the source layers, and the drain electrodes contact the pixel electrode layers and are in electric connection with the pixel electrode layers. Each source electrode comprises at least one first repair line, each data line comprises at least one second repair line, any one or more than two combinations of the grid line, the public electrode wire and the pixel electrode layers comprise at least one corresponding redundancy area.
Description
Technical field
The utility model relates to the display technique field, relates in particular to thin-film transistor array base-plate and display device.
Background technology
Continuous progress along with science and technology, the user increases day by day to the demand of liquid crystal display, TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor (TFT) liquid crystal display) also becomes the main flow display that uses in the products such as mobile phone, panel computer.In addition, along with popularizing of display device, the user is more and more general to the demand of high chromaticity, high-contrast, high visible angle, high response speed and low-power consumption, OLED (OrganicLight-Emitting Diode, Organic Light Emitting Diode) display also begins to progress into user's the visual field, and the user is also more and more higher to the quality requirements of display.And in present display, the stability of thin-film transistor array base-plate is one of the factor that affects the quality of display.
Existing thin-film transistor array base-plate, usually adopt the mode of setting up a connecting line between source electrode and data line to realize being connected between data line and thin film transistor (TFT), but as this connecting line DO (Data Open, data line disconnects) time, being connected between thin film transistor (TFT) and data line disconnects, and then breaks down, and causes the thin-film transistor array base-plate poor stability, yields is low, and repairs very difficult.
The utility model content
Embodiment of the present utility model provides a kind of thin-film transistor array base-plate and display device, can work as when disconnecting between thin film transistor (TFT) and data line, the reparation of realization to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promote the stability of thin-film transistor array base-plate.
For achieving the above object, embodiment of the present utility model adopts following technical scheme:
the utility model embodiment provides a kind of thin-film transistor array base-plate, comprise substrate, be arranged at grid line and public electrode wire on described substrate, be arranged at the gate insulation layer on described grid line and public electrode wire, be arranged at the active layer on described gate insulation layer, be arranged at the source electrode on described active layer, drain electrode, data line and pixel electrode layer, wherein, described source electrode contacts with described active layer, described drain electrode contacts with described active layer, described drain electrode contacts and is electrically connected to described pixel electrode layer
Described source electrode comprises at least one first repair line, described data line comprises at least one second repair line, in described grid line, public electrode wire, pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when described source electrode and the disconnection of described data line, described source electrode is communicated with described data line by described the first repair line, redundant area and the second repair line.
Be formed with via hole between described the first repair line and described redundant area, be formed with via hole between described the second repair line and described redundant area.
Described data line also comprises the 3rd repair line, and described the 3rd repair line is positioned at the top of described public electrode wire.
Described data line also comprises the 4th repair line, and described the 4th repair line is positioned at the top of described grid line.
The utility model embodiment provides a kind of display device, comprises the thin-film transistor array base-plate with above-mentioned arbitrary characteristics.
the thin-film transistor array base-plate that the utility model embodiment provides and display device, thin-film transistor array base-plate comprises substrate, be arranged at grid line and public electrode wire on substrate, be arranged at the gate insulation layer on grid line and public electrode wire, be arranged at the active layer on gate insulation layer, be arranged at the source electrode on active layer, drain electrode, data line and pixel electrode layer, wherein, source electrode contacts with active layer, drain electrode contacts with active layer, drain electrode contacts with pixel electrode layer and is electrically connected to, source electrode comprises at least one first repair line, data line comprises at least one second repair line, grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is by the first repair line, redundant area and the second repair line are communicated with data line.By this scheme, owing to having formed the first repair line, redundant area and the second repair line on array base palte, can work as when disconnecting between thin film transistor (TFT) and data line, the reparation of realization to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The film transistor array base plate structure vertical view one that Fig. 1 provides for the utility model embodiment;
The film transistor array base plate structure sectional view one that Fig. 2 provides for the utility model embodiment;
The film transistor array base plate structure sectional view two that Fig. 3 provides for the utility model embodiment;
The film transistor array base plate structure vertical view two that Fig. 4 provides for the utility model embodiment;
The film transistor array base plate structure vertical view three that Fig. 5 provides for the utility model embodiment;
The film transistor array base plate structure vertical view four that Fig. 6 provides for the utility model embodiment;
The film transistor array base plate structure sectional view three that Fig. 7 provides for the utility model embodiment;
The film transistor array base plate structure sectional view four that Fig. 8 provides for the utility model embodiment;
The film transistor array base plate structure sectional view five that Fig. 9 provides for the utility model embodiment;
The film transistor array base plate structure sectional view six that Figure 10 provides for the utility model embodiment;
The film transistor array base plate structure sectional view seven that Figure 11 provides for the utility model embodiment;
The method for making schematic flow sheet of the thin-film transistor array base-plate that Figure 12 provides for the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
The thin-film transistor array base-plate that the utility model embodiment provides comprises:
substrate, be arranged at grid line and public electrode wire on described substrate, be arranged at the gate insulation layer on described grid line and public electrode wire, be arranged at the active layer on described gate insulation layer, be arranged at the source electrode on described active layer, drain electrode, data line and pixel electrode layer, wherein, described source electrode contacts with described active layer, described drain electrode contacts with described active layer, described drain electrode contacts and is electrically connected to described pixel electrode layer, described source electrode comprises at least one first repair line, described data line comprises at least one second repair line, described grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when described source electrode and the disconnection of described data line, described source electrode is by described the first repair line, redundant area and the second repair line are communicated with described data line.
As shown in Figure 1, a kind of thin-film transistor array base-plate 1 comprises:
Be the vertical view of thin-film transistor array base-plate 1 due to Fig. 1, therefore do not draw the gate insulation layer that is arranged on grid line 11 and public electrode wire 12 and the active layer that is arranged on gate insulation layer in Fig. 1.Exemplary, source electrode 15 can comprise first repair line 150, and data line 18 can comprise second repair line 180, and redundant area 100 can be positioned at pixel electrode layer 17.
When forming source electrode 15, the metal wire of source electrode 15 can be extended to beyond grid line 11, so, when using the molten mode that connects of laser to connect source electrode 15 with data line 18, can prevent that grid line 11 is breakdown; When forming data line 18, can reserved part the zone as the second repair line 180, so, when using the molten mode that connects of laser to connect source electrode 15 with data line 18, can prevent the impact on data line 18 resistance; When forming pixel electrode layer 17, can form a redundant area 100 with pixel electrode layer 17 identical retes above the first repair line 150 and the second repair line 180, wherein, redundant area 100 and the first repair line 150, the second repair line 180 are spatially overlapping.
If do not adopt the molten mode that connects of laser to connect the first repair line 150, the second repair line 180 and redundant area 100, can be when making thin-film transistor array base-plate 1, form via hole 101 between the first repair line 150 and redundant area 100, be formed with via hole 101 between the second repair line 180 and redundant area 100, thereby make data line and redundant area realize that two-wire is in parallel.As shown in Figure 2, when DO occurs in being connected between the data line in figure and thin film transistor (TFT), even do not take the reparation means, the electric current that passes through in data line 18 also can pass through this second repair line 180, redundant area 100, the first repair line 150 is transferred to the conducting that source electrode 15 is realized circuit, guarantee current lead-through between thin film transistor (TFT) and data line, improved in design whole substrate ability to ward off risks for the DO problem on this position; If not forming via hole in the technological process of making thin-film transistor array base-plate 1 connects, when DO appears in the connecting line between data line 18 and source electrode 15, can adopt the mode of laser boring welding that the first repair line 150 is connected with redundant area 100, redundant area 100 is connected with the second repair line 180, and then is connected with data line 18 with source electrode 15.After repairing, electric current can pass through the second repair line 180, redundant area 100, the first repair line 150, is transferred to source electrode 15 from data line 18, realizes the conducting of TFT and data line 18, recovers the function of TFT device, completes reparation.
Concrete, as shown in Figure 2, sectional view for the a-a place of the described thin-film transistor array base-plate 1 of Fig. 1, wherein, when making thin-film transistor array base-plate 1, be formed with via hole 101 between formation via hole 101, the second repair lines 180 and redundant area 100 between the first repair line 150 and redundant area 100, thereby make data line and redundant area realize that two-wire is in parallel.due to the first repair line 150, the second repair line 180 is connected with redundant area 100 and the first repair line 150, the second repair line 180 is all conducted electricity with redundant area 100, electric current can pass through the second repair line 180, redundant area 100, the first repair line 150 is transferred to source electrode 15 from data line 18, to realize the conducting of TFT device and data line, existence due to this connecting line, when DO occurs in being connected between data line in Fig. 1 and thin film transistor (TFT), even do not take the reparation means, the electric current that passes through in data line 18 also can pass through this second repair line 180, redundant area 100, the first repair line 150 is transferred to the conducting that source electrode 15 is realized circuit, guaranteed current lead-through between thin film transistor (TFT) and data line, improved in design whole substrate ability to ward off risks for the DO problem on this position.
Same; as shown in Figure 3; sectional view for the a-a place of the described thin-film transistor array base-plate 1 of Fig. 1; comprising: gate insulation layer 13; be arranged at active layer 14, the first repair line 150, the second repair line 180 on gate insulation layer 13; be arranged at the protective seam 19 on the first repair line 150 and the second repair line 180, and be arranged at the redundant area 100 on protective seam 19.When DO appears in data line and source electrode, above the second repair line 180 with the first repair line 150 above mode by the laser boring welding be connected the first repair line 150, the second repair line 180 and redundant area 100, after repairing, electric current can be transferred to source electrode from data line by the first repair line 150, redundant area 100, the second repair line 180, realize the conducting of TFT and data line, recover the function of TFT device, complete reparation.
Further, as shown in Figure 4, data line 18 also comprises the 3rd repair line 181, the 3rd repair line 181 is positioned at the top of public electrode wire 12, connected data line 18 and the 3rd repair line 181 owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that the two-wire of data line and redundant area is in parallel.Be positioned at the 3rd repair line 181 on data line 18 and can reduce the risk that DO occur for public electrode wire 12 and data line 18 crossover position.This crossover position is owing to existing difference in height, and easily appearance is membranous bad in film forming procedure, thereby in etching process, DO occurs easily.If DO occurs in data line 18, data line 18 and the 3rd repair line 181 have been connected owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that two-wire is in parallel, even do not take the reparation means, the electric current that passes through in data line 18 also can be realized by the 3rd repair line 181 conducting of circuit.
Connected data line 18 and the 3rd repair line 181 owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that the two-wire of data line and redundant area is in parallel.Same, when the crossover region generation electrostatic breakdown of data line 18 and public electrode wire 12, laser repairing only need be kept apart the electrostatic breakdown point on data line or public electrode wire, and data line 18 just can pass through the 3rd repair line 181 signal transmissions, realizes for the bad reparation of this position electrostatic breakdown.
Need to prove, if not forming via hole in the technological process of making thin-film transistor array base-plate 1 connects, when DO occurs with data line 18 crossover position in public electrode wire 12, can adopt the mode of laser boring welding that data line 18 is connected with the 3rd repair line 181, this moment, data line 18 and the 3rd repair line 181 just can realize conducting.So when the crossover region generation electrostatic breakdown of data line 18 and public electrode wire 12, only need first keep apart the electrostatic breakdown point on data line 18 or public electrode wire 12 during laser repairing, and adopt the mode of laser boring welding that data line 18 is connected with the 3rd repair line 181, data line 18 just can pass through the 3rd repair line 181 signal transmissions, realizes for the bad reparation of this position electrostatic breakdown.
Further, as shown in Figure 5, data line 18 also comprises the 4th repair line 182, the 4th repair line 182 is positioned at the top of grid line 11, connected data line 18 and the 4th repair line 182 owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that the two-wire of data line and redundant area is in parallel.Be positioned at the 4th repair line 182 on data line 18 and can reduce the risk that DO occur for grid line 11 and data line 18 crossover position.This crossover position is owing to existing difference in height, and easily appearance is membranous bad in film forming procedure, thereby DO occurs in etching process.If DO occurs in above-mentioned position in data line 18, data line 18 and the 4th repair line 182 have been connected owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that two-wire is in parallel, even do not take the reparation means, the electric current that passes through in data line 18 also can be realized by the 4th repair line 182 conducting of circuit.
Same, when the crossover region generation electrostatic breakdown of data line 18 and grid line 11, only need keep apart the electrostatic breakdown point on data line during laser repairing, data line just can pass through the 4th repair line 182 signal transmissions, and realization is for the bad reparation of this position electrostatic breakdown.
Need to prove, if not forming via hole in the technological process of making thin-film transistor array base-plate 1 connects, when DO occurs with data line 18 crossover position in grid line 11, can adopt the mode of laser boring welding that data line 18 is connected with the 4th repair line 182, this moment, data line 18 and the 4th repair line 182 realized conducting.When the crossover region generation electrostatic breakdown of data line 18 and grid line 11, only need first keep apart the electrostatic breakdown point on data line 18 during laser repairing, and adopt the mode of laser boring welding that data line 18 is connected with the 4th repair line 182, data line 18 just can pass through the 4th repair line 182 signal transmissions, realizes for the bad reparation of this position electrostatic breakdown.
What need to replenish is, as shown in Figure 6, data line 18 can comprise simultaneously that the 3rd repair line 181 and the 4th repair line 182, the three repair lines 181 are positioned at the top of public electrode wire 12, and the 4th repair line 182 is positioned at the top of grid line 11.If the 3rd repair line and the 4th is repaired simultaneously exist, can realize that two-wire is in parallel by forming via hole, also can after the later stage dot structure forms, when finding that broken string or electrostatic breakdown problem occur data line, adopt the molten method of repairing that connects of laser to solve.Embodiment above-described embodiment is described in detail, repeats no more herein.
As shown in Figure 7; sectional view for the b-b place of the described thin-film transistor array base-plate 1 of Fig. 6; comprising: be arranged at the gate insulation layer 13 on grid line 11 and public electrode wire 12; be arranged at active layer 14, data line 18 on gate insulation layer 13, be arranged at the protective seam 19 on data line 18 and be arranged at the 3rd repair line and the 4th repair line and via hole 101 on protective seam 19.If DO occurs in data line 18, data line 18 and the 3rd repair line 181 and the 4th repair line 182 have been connected owing to having formed via hole in the technological process of making thin-film transistor array base-plate 1, realized that two-wire is connected in parallel, even do not take the reparation means, the electric current that passes through in data line 18 also can be realized by the 3rd repair line 181 and the 4th repair line 182 conducting of circuit.
Same, when the crossover region generation electrostatic breakdown of data line 18 and grid line 11 or data line 18 and public electrode wire 12, only need keep apart electrostatic breakdown point on data line 18 etc. during laser repairing, data line 18 just can pass through the 3rd repair line 181 and the 4th repair line 182 signal transmissions, realizes for the bad reparation of this position electrostatic breakdown.
What need to replenish is, data line 18 and the 3rd repair line 181 and the 4th repair line 182 have not been connected if form via hole in the technological process of making thin-film transistor array base-plate 1, when DO or electrostatic breakdown occur with data line 18 crossover position in grid line 11, can adopt the mode of laser boring welding to make data line 18 can pass through the 3rd repair line 181 and the 4th repair line 182 signal transmissions, can repair the fault of DO or electrostatic breakdown, embodiment above-described embodiment is described in detail, repeats no more herein.
What need to replenish is, the 3rd repair line and the 4th repair line mentioned in the utility model embodiment all are preferably the pixel electrode rete, due to pixel electrode and data line generally not at same rete, DO or electrostatic breakdown all can not occur simultaneously at two paths of parallel connection, therefore adopt this structure can better realize reparation and prevention for DO and electrostatic breakdown problem.
What need to replenish is, the utility model embodiment can adjust adaptively between drain electrode and pixel electrode layer and be connected the position of via hole used, via hole can be arranged at the zone away from the first repair line, redundant area, the second repair line, in order to reduce electric circuit metal density.
Further, redundant area 100 can also be positioned at same layer with grid line 11, reserve redundant area 100 when forming grid line 11 on substrate, can realize equally the reparation to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
Further, redundant area 100 can also be positioned at same layer with public electrode wire 12, reserve redundant area 100 when forming public electrode wire 12 on substrate, can realize equally the reparation to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
Because grid line 11 and public electrode wire 12 are positioned at same layer, the below is merged into line description with two kinds of situations.
as shown in Figure 8, for redundant area 100 and grid line 11 are positioned in the situation of same layer, the sectional view at the a-a place of the described thin-film transistor array base-plate 1 of Fig. 1, when making thin-film transistor array base-plate 1, form via hole 101 between the first repair line 150 and redundant area 100, be formed with via hole 101 between the second repair line 180 and redundant area 100, due to the first repair line 150, the second repair line 180 is connected with redundant area 100 and the first repair line 150, the second repair line 180 is all conducted electricity with redundant area 100, electric current can be transferred to source electrode 15 from data line 18 by redundant area 100, to realize the conducting of TFT device and data line, when DO appears in the connecting line of data line and source electrode, even do not take the reparation means, also can realize the reparation of connecting line break between thin film transistor (TFT) and data line.
What need to replenish is, because redundant area 100 is just to form when forming grid line, if the DO problem occurs so connecting line detected after data line forms, can adopt immediately the laser boring fusion techniques realize to repair, do not need by the time the reparation of becoming a useful person of thin film transistor base plate full form.
What need to replenish is that as shown in Figure 9, if do not adopt the mode of via hole to connect the first repair line 150, the second repair line 180 and redundant area 100, this moment, redundant area 100 did not all contact with the first repair line 150, the second repair line 180.Comprising: redundant area 100, be arranged at the gate insulation layer 13 on redundant area 100, be arranged at the active layer 14 on gate insulation layer 13, the second repair line 180 that the first repair line 150 that source electrode 15 comprises and data line 18 comprise.When DO appears in the connecting line of data line and source electrode, above the second repair line 180 with the first repair line 150 above mode by the laser boring welding be connected the first repair line 150, the second repair line 180 and redundant area 100, after repairing, electric current can be transferred to source electrode from data line by the first repair line 150, redundant area 100, the second repair line 180, realize the conducting of TFT and data line, recover the function of TFT device, complete reparation.
Exemplary, carry out with one deck redundant area the reparation that is connected between thin film transistor (TFT) and data line if be not only, as shown in figure 10, form via hole 101 between the first repair line 150 and redundant area 100, be formed with via hole 101 between the second repair line 180 and redundant area 100, because the first repair line 150, the second repair line 180 are connected with redundant area 100 and the first repair line 150, the second repair line 180 are all conducted electricity with redundant area 100, electric current can be transferred to source electrode 15 from data line 18 by redundant area 100, to realize the conducting of TFT device and data line.And the redundant area that pixel electrode layer 17 forms is positioned on protective seam 19; if realize after the two-wire parallel connection, DO occuring still by via hole; the redundant area that we can also be formed by pixel electrode layer 17 by the mode welding of laser boring welding realizes repairing, thereby has increased the reliability of thin film transistor (TFT).
Figure 11 has adopted via hole twice, has realized the mode of pixel electrode layer and grid line multilayer redundant parallel, has improved thus performance of devices.As shown in figure 11, form via hole 101 between the first repair line 150 and redundant area 100, be formed with via hole 101 between the second repair line 180 and redundant area 100, electric current can be transferred to source electrode 15 from data line 18 by redundant area 100, to realize the conducting of TFT device and data line.Simultaneously form via hole between pixel electrode layer 17 and the first repair line 150, the second repair line 180, if between thin film transistor (TFT) and data line, DO occurs in connecting line, even do not take the reparation means, also can realize the conducting of circuit, increased the reliability of thin film transistor (TFT).
what need to replenish is, the utility model embodiment not only is only limited to and uses a kind of redundant area to carry out the reparation that is connected between thin film transistor (TFT) and data line, this redundant area is as long as be the conductive film layer except data wire film layer, as long as the conductive material that via hole adopts is the conductive film layer for depositing after the redundant area rete forms, the above-mentioned redundant area that is positioned at different retes, can select any one or two or more combination to reserve redundant area according to different demands, be that redundant area can be used in combination arbitrarily on a plurality of retes, thereby repair being connected between thin film transistor (TFT) and data line.Simultaneously, it is with a kind of reparation means that the utility model embodiment also is not limited only to, both can form via hole in the technological process of making thin-film transistor array base-plate, guarantee the connection of circuit, also can be after DO occurs, use the connection of the mode restoring circuit of laser boring welding, the utility model does not limit.
Further, this thin-film transistor array base-plate also can be used in the product of TN (TwistedNematic, twisted-nematic technology) pattern and ADS (ADvanced Super DimensionSwitch, a senior super dimension switch technology) pattern.But for the ADS pattern, due to the setting of device itself, there is two-layer ITO (Indium Tin Oxides, tin indium oxide) rete, wherein the rete at pixel electrode place is the 2nd ITO layer, therefore, for the dot structure of ADS pattern, can also do again a redundant area on its ITO electrode layer, can realize the broken string reparation to being connected between thin film transistor (TFT) and data line, the yield of improving product, its structure and above-described embodiment are basic identical, repeat no more herein.
the thin-film transistor array base-plate that the utility model embodiment provides, comprise substrate, be arranged at grid line and public electrode wire on substrate, be arranged at the gate insulation layer on grid line and public electrode wire, be arranged at the active layer on gate insulation layer, be arranged at the source electrode on active layer, drain electrode, data line and pixel electrode layer, wherein, source electrode contacts with active layer, drain electrode contacts with active layer, drain electrode contacts with pixel electrode layer and is electrically connected to, source electrode comprises at least one first repair line, data line comprises at least one second repair line, grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is by the first repair line, redundant area and the second repair line are communicated with data line.By this scheme, owing to having formed the first repair line, redundant area and the second repair line on array base palte, can work as when disconnecting between thin film transistor (TFT) and data line, the reparation of realization to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
The utility model embodiment provides a kind of TFT thin film transistor monitor device, comprises the thin-film transistor array base-plate with above-mentioned arbitrary characteristics.
this thin-film transistor array base-plate passes through substrate, be arranged at grid line and public electrode wire on substrate, be arranged at the gate insulation layer on grid line and public electrode wire, be arranged at the active layer on gate insulation layer, be arranged at the source electrode on active layer, drain electrode, data line and pixel electrode layer, wherein, source electrode contacts with active layer, drain electrode contacts with active layer, drain electrode contacts with pixel electrode layer and is electrically connected to, source electrode comprises at least one first repair line, data line comprises at least one second repair line, grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is by the first repair line, redundant area and the second repair line are communicated with data line.
Use the display equipment of this kind thin-film transistor array base-plate can realize reparation to connecting line break between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, thereby promoted the stability of TFT thin film transistor monitor device.
the display device that the utility model embodiment provides, thin-film transistor array base-plate comprises substrate, be arranged at grid line and public electrode wire on substrate, be arranged at the gate insulation layer on grid line and public electrode wire, be arranged at the active layer on gate insulation layer, be arranged at the source electrode on active layer, drain electrode, data line and pixel electrode layer, wherein, source electrode contacts with active layer, drain electrode contacts with active layer, drain electrode contacts with pixel electrode layer and is electrically connected to, source electrode comprises at least one first repair line, data line comprises at least one second repair line, grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is by the first repair line, redundant area and the second repair line are communicated with data line.By this scheme, owing to having formed the first repair line, redundant area and the second repair line on array base palte, can work as when disconnecting between thin film transistor (TFT) and data line, the reparation of realization to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
The utility model embodiment also provides a kind of method for making of thin-film transistor array base-plate, and the method comprises:
Form grid line and public electrode wire on substrate;
Form gate insulation layer on described grid line and public electrode wire;
Form active layer on described gate insulation layer;
Form on described active layer and comprise the source electrode of at least one the first repair line, the data line that drains, comprises at least one the second repair line and pixel electrode layer;
Wherein, in described grid line, public electrode wire, pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when described source electrode and the disconnection of described data line, described source electrode is communicated with described data line by described the first repair line, redundant area and the second repair line.
Corresponding with the thin-film transistor array base-plate in above-described embodiment, as shown in figure 12, the method for making of thin-film transistor array base-plate comprises:
S101, form grid line and public electrode wire on substrate.
S102, form gate insulation layer on grid line and public electrode wire.
S103, form active layer on gate insulation layer.
S104, form on active layer and comprise the source electrode of at least one the first repair line, the data line that drains, comprises at least one the second repair line and pixel electrode layer.
Wherein, in grid line, public electrode wire, pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is communicated with data line by the first repair line, redundant area and the second repair line.
When forming source electrode, form place's redundant area as the first repair line, so, when operation technique laser boring welding connects source electrode and data line, can prevent that the grid line below source electrode is breakdown; When forming data line, can reserved part the zone as the second repair line, so, when operation technique laser boring welding connects source electrode and data line, can prevent the impact on the data line resistance; When forming pixel electrode layer, can form one and the corresponding redundant area of pixel electrode layer.
In grid line, public electrode wire, pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is communicated with data line by the first repair line, redundant area and the second repair line, use for convenience the broken string between prior art laser repairing source electrode and data line, overlapping on redundant area and the first repair line, the second repair line Existential Space.
When DO appears in the connecting line of data line and source electrode, indicated the first repair line of Fig. 1 cross and the second repair line place adopt the mode of laser boring welding make with the first repair line and the second repair line Existential Space on overlapping redundant area be connected with the second repair line with the first repair line, and then be connected with source electrode, data line.After repairing, electric current can be transferred to source electrode from data line by redundant area, the conducting of realization and data line, and the function of recovery TFT device is completed reparation.
S105, form via hole between the first repair line and redundant area, form via hole between the second repair line and redundant area.
Overlapping on redundant area and the first repair line, the second repair line Existential Space, when DO appears in the connecting line of data line and source electrode, can adopt the mode of laser boring welding that the second repair line that the first repair line, data line that redundant area and source electrode comprise comprise is connected.If do not adopt the mode of laser boring welding that redundant area is connected with source electrode, data line, also can be when making thin-film transistor array base-plate, form via hole between the first repair line and redundant area, be formed with via hole between the second repair line and redundant area, to realize the reparation to being connected between thin film transistor (TFT) and data line.
Owing to having formed via hole between the first repair line, the second repair line and redundant area, the first repair line, the second repair line are connected with redundant area and the first repair line, the second repair line and redundant area are all conducted electricity, electric current can be transferred to source electrode from data line by redundant area, data line realizes that with redundant area two-wire is in parallel, if between source electrode and data line, DO occurs in connecting line, even do not take the reparation means also can guarantee the conducting of TFT device and data line.
S106, data line also comprise the 3rd repair line, and the 3rd repair line is positioned at the top of public electrode wire, so that when electrostatic breakdown or data line disconnection occured between data line and public electrode wire, data line was by the 3rd repair line signal transmission.
Data line also comprises the 3rd repair line, the 3rd repair line is positioned at the top of public electrode wire, when making thin-film transistor array base-plate, form via hole between the 3rd repair line and data line, realize that two-wire is in parallel between data line and the 3rd repair line, therefore when DO or electrostatic breakdown occur the crossover region of data line and public electrode wire, can repair fault by the reparation means, by the 3rd repair line signal transmission.
S107, data line also comprise the 4th repair line, and the 4th repair line is positioned at the top of grid line, so that when electrostatic breakdown or data line disconnection occured between data line and grid line, data line was by the 4th repair line signal transmission.
Data line also comprises the 4th repair line, the 4th repair line is positioned at the top of grid line, when making thin-film transistor array base-plate, form via hole between the 4th repair line and data line, realize that two-wire is in parallel between data line and the 4th repair line, therefore when DO or electrostatic breakdown occur the crossover region of data line and grid line, can repair fault by the reparation means, by the 4th repair line signal transmission.
Integrating step S106 and S107, the 3rd repair line and the 4th repair line that data line is comprised describe.
Data line comprises the 3rd repair line, and the 3rd repair line is positioned at the top of public electrode wire, is positioned at the 3rd repair line on data line and can reduces the risk that DO occurs for public electrode wire and data line crossover position.If DO occurs in data line, connect owing to having formed via hole in the technological process of the making thin-film transistor array base-plate of making thin-film transistor array base-plate, realize that two-wire is in parallel between data line and the 3rd repair line.Even do not take the reparation means, the electric current that passes through in data line also can be realized the conducting of circuit by the 3rd repair line, on the other hand, if DO occurs in the 3rd repair line, also can realize by data line the transmission of marking current, thereby reach the purpose that reduces the DO occurrence risk.When the crossover region generation electrostatic breakdown of data line 18 and public electrode wire 11, laser repairing only need be kept apart the electrostatic breakdown point on data line or public electrode wire, data line 18 just can pass through the 3rd repair line 181 signal transmissions, realizes for the bad reparation of this position electrostatic breakdown.
need to prove, if not forming via hole in the technological process of making thin-film transistor array base-plate connects, when public electrode wire and data line crossover position generation DO, can adopt the mode of laser boring welding that data line is connected with the 3rd repair line, and when the crossover region generation electrostatic breakdown of data line and public electrode wire, only need first keep apart the electrostatic breakdown point on data line 18 or public electrode wire 12 during laser repairing, and adopt the mode of laser boring welding that data line 18 is connected with the 3rd repair line 181, data line just can pass through the 3rd repair line signal transmission, realization is for the bad reparation of this position electrostatic breakdown.The existence of the 3rd repair line can be simplified maintenance procedures and improve repairable rate, and after repairing, data line can pass through the 3rd repair line signal transmission.
Further, data line also comprises the 4th repair line, and the 4th repair line is positioned at the top of grid line, is positioned at the 4th repair line on data line and can reduces the risk that DO occurs for grid line and data line crossover position.Connect owing to having formed via hole in the technological process of making thin-film transistor array base-plate, the 4th repair line and data line featuring diplonema redundancy, if DO occurs in data line, even do not take the reparation means, the electric current that passes through in data line also can be realized the conducting of circuit by the 4th repair line, on the other hand, if DO occurs in the 4th repair line, also can pass through the transmission of data line signal electric current, thereby reach the purpose that reduces the DO occurrence risk.When the crossover region generation electrostatic breakdown of data line 18 and grid line 12, laser repairing only need be kept apart the electrostatic breakdown point on data line, and data line 18 just can pass through the 4th repair line 182 signal transmissions, and realization is for the bad reparation of this position electrostatic breakdown.
need to prove, if not forming via hole in the technological process of making thin-film transistor array base-plate connects, when grid line and data line crossover position generation DO, can adopt the mode of laser boring welding that data line is connected with the 4th repair line, therefore when the crossover region generation electrostatic breakdown of data line and grid line, after only need first keeping apart the electrostatic breakdown point on data line 18 during laser repairing, and adopt the mode of laser boring welding that data line 18 is connected with the 4th repair line 182, data line just can pass through the 4th repair line signal transmission, realization is for the bad reparation of this position electrostatic breakdown.The existence of the 4th repair line can be simplified maintenance procedures and improve repairable rate, and after repairing, data line can pass through the 4th repair line signal transmission.
What need to replenish is, data line can comprise the 3rd repair line and the 4th repair line simultaneously, the 3rd repair line is positioned at the top of public electrode wire, the 4th repair line is positioned at the top of grid line, so that when DO or electrostatic breakdown occur in the crossover region of data line and public electrode wire or grid line, after utilizing the laser means to repair, can realize the reparation to fault, wherein, the method of using the 3rd repair line and the 4th repair line to repair is described in detail in the above-described embodiments, repeats no more herein.
Further, the method for making of this thin-film transistor array base-plate also can be used for TN (Twisted Nematic, the twisted-nematic technology) product of pattern and ADS (ADvanced SuperDimension Switch, a senior super dimension switch technology) pattern.But for the ADS pattern, due to the setting of device itself, there is two-layer ITO (Indium Tin Oxides, tin indium oxide) rete, wherein the rete at pixel electrode place is the 2nd ITO layer, therefore, for the dot structure of ADS pattern, can also do a redundant area on its ITO layer, can realize the broken string reparation to being connected between thin film transistor (TFT) and data line, the yield of improving product, its method for making and implementation and above-described embodiment are basic identical, repeat no more herein.
the method for making of the thin-film transistor array base-plate that the utility model embodiment provides, thin-film transistor array base-plate comprises substrate, be arranged at grid line and public electrode wire on substrate, be arranged at the gate insulation layer on grid line and public electrode wire, be arranged at the active layer on gate insulation layer, be arranged at the source electrode on active layer, drain electrode, data line and pixel electrode layer, wherein, source electrode contacts with active layer, drain electrode contacts with active layer, drain electrode contacts with pixel electrode layer and is electrically connected to, source electrode comprises at least one first repair line, data line comprises at least one second repair line, grid line, public electrode wire, in pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when source electrode and data line disconnection, source electrode is by the first repair line, redundant area and the second repair line are communicated with data line.By this scheme, owing to having formed the first repair line, redundant area and the second repair line on array base palte, can work as when disconnecting between thin film transistor (TFT) and data line, the reparation of realization to being connected between thin film transistor (TFT) and data line, improve the yields of thin-film transistor array base-plate, promoted the stability of thin-film transistor array base-plate.
The utility model embodiment provides a kind of display device, has the thin-film transistor array base-plate of the described arbitrary characteristics of above-described embodiment.This display device can be liquid crystal indicator, comprises the color membrane substrates of opposing parallel setting and the thin-film transistor array base-plate that above-described embodiment proposes, and is filled in the liquid crystal between described color membrane substrates and thin-film transistor array base-plate; This display device also can be the OLED display device, comprises the thin-film transistor array base-plate that above-described embodiment proposes, and luminous organic material and the encapsulation cover plate of evaporation on this array base palte.
The liquid crystal indicator that the utility model embodiment provides, described liquid crystal indicator can have product or the parts of Presentation Function for liquid crystal display, LCD TV, digital album (digital photo frame), mobile phone, panel computer etc., and the utility model does not limit.
The above; it is only embodiment of the present utility model; but protection domain of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of described claim.
Claims (5)
1. thin-film transistor array base-plate, comprise substrate, be arranged at grid line and public electrode wire on described substrate, be arranged at the gate insulation layer on described grid line and public electrode wire, be arranged at the active layer on described gate insulation layer, be arranged at source electrode, drain electrode, data line and pixel electrode layer on described active layer, wherein, described source electrode contacts with described active layer, described drain electrode contacts with described active layer, described drain electrode contacts and is electrically connected to described pixel electrode layer, it is characterized in that
Described source electrode comprises at least one first repair line, described data line comprises at least one second repair line, in described grid line, public electrode wire, pixel electrode layer, any one or two or more combination comprise at least one corresponding redundant area, so that when described source electrode and the disconnection of described data line, described source electrode is communicated with described data line by described the first repair line, redundant area and the second repair line.
2. thin-film transistor array base-plate according to claim 1, is characterized in that, is formed with via hole between described the first repair line and described redundant area, is formed with via hole between described the second repair line and described redundant area.
3. thin-film transistor array base-plate according to claim 1 and 2, is characterized in that, described data line also comprises the 3rd repair line, and described the 3rd repair line is positioned at the top of described public electrode wire.
4. thin-film transistor array base-plate according to claim 3, is characterized in that, described data line also comprises the 4th repair line, and described the 4th repair line is positioned at the top of described grid line.
5. a display device, is characterized in that, comprises thin-film transistor array base-plate as described in any one in claim 1-4.
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| CN 201220696955 CN202939398U (en) | 2012-12-14 | 2012-12-14 | Thin film transistor array substrate and display device |
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| CN 201220696955 CN202939398U (en) | 2012-12-14 | 2012-12-14 | Thin film transistor array substrate and display device |
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| CN202939398U true CN202939398U (en) | 2013-05-15 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102998869A (en) * | 2012-12-14 | 2013-03-27 | 京东方科技集团股份有限公司 | Thin film transistor array substrate and manufacturing method thereof as well as display device |
| CN105448254A (en) * | 2014-09-23 | 2016-03-30 | 美格纳半导体有限公司 | Liquid crystal display device, method for constructing a repair type data format structure |
| CN106842751A (en) * | 2017-04-11 | 2017-06-13 | 京东方科技集团股份有限公司 | Array base palte and its restorative procedure, display device |
| CN110764329A (en) * | 2019-10-31 | 2020-02-07 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, liquid crystal display panel and display device |
| CN113238418A (en) * | 2021-04-14 | 2021-08-10 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, display panel and manufacturing method of array substrate |
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2012
- 2012-12-14 CN CN 201220696955 patent/CN202939398U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102998869A (en) * | 2012-12-14 | 2013-03-27 | 京东方科技集团股份有限公司 | Thin film transistor array substrate and manufacturing method thereof as well as display device |
| CN102998869B (en) * | 2012-12-14 | 2015-11-11 | 京东方科技集团股份有限公司 | Thin-film transistor array base-plate and preparation method thereof, display device |
| CN105448254A (en) * | 2014-09-23 | 2016-03-30 | 美格纳半导体有限公司 | Liquid crystal display device, method for constructing a repair type data format structure |
| CN105448254B (en) * | 2014-09-23 | 2019-11-12 | 美格纳半导体有限公司 | LCD device and for construct repair categorical data format structure method |
| CN106842751A (en) * | 2017-04-11 | 2017-06-13 | 京东方科技集团股份有限公司 | Array base palte and its restorative procedure, display device |
| WO2018188417A1 (en) * | 2017-04-11 | 2018-10-18 | 京东方科技集团股份有限公司 | Array substrate and repairing method therefor, and display device |
| CN106842751B (en) * | 2017-04-11 | 2020-06-23 | 京东方科技集团股份有限公司 | Array substrate, repairing method thereof and display device |
| US10838273B2 (en) | 2017-04-11 | 2020-11-17 | Beijing Boe Display Technology Co., Ltd. | Array substrate, repair method thereof, and display device |
| CN110764329A (en) * | 2019-10-31 | 2020-02-07 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, liquid crystal display panel and display device |
| CN113238418A (en) * | 2021-04-14 | 2021-08-10 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, display panel and manufacturing method of array substrate |
| CN113238418B (en) * | 2021-04-14 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, display panel and manufacturing method of array substrate |
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