CN103885262B - TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof - Google Patents
TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 8
- 239000010409 thin film Substances 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000003466 welding Methods 0.000 claims description 19
- 230000004927 fusion Effects 0.000 claims description 10
- 238000003698 laser cutting Methods 0.000 claims description 6
- 230000008439 repair process Effects 0.000 description 13
- 238000002161 passivation Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
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- -1 alloy Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
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- 230000009131 signaling function Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- Physics & Mathematics (AREA)
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
The invention discloses a TFT-LCD (thin film transistor-liquid crystal display) array substrate and a data line disconnection restoring method thereof. The TFT-LCD array substrate comprises a first metal layer, a second metal layer and a transparent electrode layer which are sequentially arranged from the bottom to the top, grid lines and common electrode lines are formed in the first metal layer, data lines are formed in the second metal layer, a pixel electrode is formed in the transparent electrode layer, the grid lines and the data lines are intersected to form pixel areas, the pixel electrode and the common electrode lines are mounted in the pixel areas, each common electrode line comprises a first electrode line and a second electrode line which are connected with each other, shadows of the second electrode lines and the data lines on the second metal layer are parallel to each other, and shadows of the first electrode lines and the data lines on the second metal layer are intersected.
Description
Technical field
The present invention relates to a kind of TFT-LCD substrate manufacture field, more particularly, to a kind of TFT-LCD array substrate and its data
The restorative procedure of line broken string.
Background technology
With the development of information-intensive society, people are increased to the demand of display device.In order to meet this continuous increasing
Long ground demand, flat panel display equipment such as liquid crystal display device (Liquid Crystalline Display LCD), plasma
Body display device (Plasma Display Panel, PDP), OLED (Organic Light-Emitting Diode) display
Part etc. is obtained for swift and violent development.In the middle of flat-panel display device, liquid crystal display device is because its weight is low, small volume, energy
Consume low advantage, progressively replace cold cathode display device.
Initial liquid crystal display device is passive matrix, so-called passive matrix, is that voltage is applied directly to the upper and lower of pixel
On electrode.Drive liquid crystal by the voltage difference on upper/lower electrode, form bright showing slinkingly and show.Main flow is essentially all using thin at present
Driving liquid crystal, TFT switch is switched on and off under signal control film transistor (Thin Film Transistor, TFT), will
Different voltage writes the pixel electrode of infrabasal plate (array base palte).After write, TFT turns off under signal function, and voltage is protected
Handle, it is achieved thereby that high-resolution and high gray number.The wherein control signal of TFT is inputted by grid line, on pixel electrode
Voltage is inputted by data wire.
At present TFT LCD part substantially resolution can realize 1920 × 1080, in addition have can reach 3840
× 2160 resolution.Millions of pixels are had on each liquid crystal display device and close to 10,000 data line or grid line.This
Multi-thread, do not break and be difficult to accomplish.So the reparation stream of broken string in actual production process, typically all can be introduced
Journey.The quality of wherein its restorative procedure, has very big impact for repairing success rate.
Conventional restorative procedure is at present：To be repaired using Laser CVD (chemical vapor deposition).
Its principle is to be catalyzed tungsten carbonyl by laser to decompose, and tungsten metal deposit in substrate surface, plays conductor and acts on realizing.Repair
Compound recipe method includes：Tungsten is grown at the position of broken string by Laser CVD；By Laser Cut the pixel electrode on side
ITO (Indium Tin Oxides) interrupts；By two end points of lf, the metal below tungsten and dielectric film is allowed to walk
Line links together.This renovation technique is relatively suitable for for general array base palte.Because its each tunic thickness is not
Very high, general 0.3～0.4um, the thickest also typically not over 0.6um.When repairing, the thickness of these different-thickness causes
Segment difference relatively little；So tungsten is not easy to break when deposition relatively, repair success rate also relatively secure.
However, for the TFT-LCD array substrate made using COA technology (Color Filter On Array),
The thickness of wherein chromatograph (RGB layer) is all thicker, reaches 3um～5um, when so carrying out broken string reparation in the manner described above, its
The thickness of melting is larger, and contact depth is deeper, and the tungsten in deposition is very easy to broken string, leads to reparation success rate to reduce.
It is thus desirable to providing a kind of broken string that can improve the TFT-LCD array substrate made using COA technology to repair into
The broken data wire restorative procedure of power.
Content of the invention
Present invention aims to drawbacks described above, provide a kind of TFT-LCD array substrate, a kind of energy is also provided simultaneously
Enough improve the broken data wire restorative procedure that this TFT-LCD array substrate repairs success rate.
The present invention provide a kind of TFT-LCD array substrate, including the first metal layer setting gradually from bottom to top, second
Metal level and transparent electrode layer, are formed with grid line and common electrode wire, shape in described second metal layer in described the first metal layer
Become to have data wire, in described transparent electrode layer, be formed with pixel electrode, described grid line and data wire intersect to form pixel region, institute
State pixel electrode and described common electrode wire is installed in described pixel region, described common electrode wire includes interconnective
First electrode line and second electrode line, the projection in described second metal layer is mutual with described data wire for described second electrode line
Parallel, intersect by the projection in described second metal layer with described data wire for described first electrode line.
In above-mentioned TFT-LCD array substrate, described first electrode line is the overall structure parallel to described grid line, described
Second electrode line is the intermittent configuration perpendicular to described grid line.
In above-mentioned TFT-LCD array substrate, described second electrode line includes the first second electrode arranged in parallel
Line and the second sub-electrode line, described common electrode wire is by described first sub-electrode line, the second sub-electrode line and first electrode
The H type structure that line is interconnected to constitute.
Above-mentioned TFT-LCD array substrate, described TFT-LED array base palte also includes connecting line, described connecting line and institute
State pixel electrode to arrange with layer, described connecting line is crossed on described grid line, one end of described connecting line and described grid line side
The second sub-electrode line connect, the other end of described connecting line is connected with the second sub-electrode line of described grid line opposite side.
In above-mentioned TFT-LCD array substrate, the described common electrode wire being located at every described grid line both sides respectively is passed through
Described connecting line is interconnected.
The present invention also provides a kind of broken data wire restorative procedure of TFT-LCD array substrate, including：
S1, find out data wire breakpoint position；
S2, using method for laser welding, the data wire of described breakpoint both sides is coupled together by common electrode wire；Wherein,
Described common electrode wire includes interconnective first electrode line and second electrode line, described second electrode line and described data wire
Projection in described second metal layer is parallel to each other, and described first electrode line and described data wire are in described second metal layer
Projection intersect；Disconnect common electrode wire and the neighbor area in the pixel region of described breakpoint place using laser cutting method
The connection of the common electrode wire in domain.
In above-mentioned broken data wire restorative procedure, described step S2 includes：
S21, using method for laser welding by the throwing in described second metal layer with it respectively of the data wire of breakpoint both sides
The described first electrode line welding that shade is handed over, forms welding in the point of intersection of described data wire and the projection of described first electrode line
Point；
S22, using laser cutting method by the pixel region of adjacent for described fusion point both sides first electrode line cut off
Thus disconnecting the connection of the common electrode wire in the pixel region of described breakpoint place and the common electrode wire in adjacent pixel regions.
Above-mentioned broken data wire restorative procedure, described step S2 includes：
S23, the described data wire disconnecting are by described first electrode line, to be connected to described first electrode line described with another
Second electrode line that is between first electrode line and connecting and another described first electrode line connection.
In above-mentioned broken data wire restorative procedure, described step S2 includes：
S21, using method for laser welding, by the data wire of breakpoint both sides, described second electrode line adjacent thereto melts respectively
Connect, form fusion point between described data wire and described second electrode line；
S22, using laser cutting method by the pixel region of adjacent for described fusion point both sides first electrode line cut off
Thus disconnecting the connection of the common electrode wire in the pixel region of described breakpoint place and the common electrode wire in adjacent pixel regions.
Above-mentioned broken data wire restorative procedure, described step S2 also includes：
S23, the described data wire disconnecting are connected by described second electrode line.
The beneficial effects of enforcing the present invention are：The present invention by using the common electrode wire in pixel region as repair number
According to the on line of line breakpoint, its data wire welding with data wire breakpoint both sides simultaneously switches off in the pixel region of breakpoint place
The connection of the common electrode wire of common electrode wire and adjacent pixel regions, it is achieved thereby that the reparation of data wire breakpoint.This repair
Overcome the segment difference problem on traditional restorative procedure again, improve reparation success rate.
Brief description
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
The structural representation of the basic embodiment of TFT-LCD array that Fig. 1 provides for the present invention；
Fig. 2 is the schematic diagram of TFT-LCD array substrate repair data line broken string of the present invention；
Fig. 3 is the second embodiment schematic diagram of TFT-LCD array substrate repair data broken string of the present invention.
Specific embodiment
Below by drawings and Examples, technical scheme is described in further detail.
Fig. 1 is the plane graph of TFT-LCD array substrate first embodiment of the present invention, and reflected is four pixel regions
Structure.Substrate (not shown) that the agent structure of the present embodiment TFT-LCD array substrate includes setting gradually from the bottom to top, first
Metal level (non-label), second metal layer (non-label), transparent electrode layer (non-label), it is arranged on this first metal layer and second
Gate insulator (not shown) between metal level, the passivation layer being arranged between second metal layer and transparent electrode layer (do not show
Go out) and it is formed at chromatograph (RGB layer) (not shown) between passivation layer and transparent electrode layer.As shown in figure 1, the first metal layer
On be formed with grid line 2 and common electrode wire (non-label)；Data wire 1 is formed with second metal layer, transparent electrode layer is formed
There are pixel electrode 3 and thin film transistor (TFT) (not shown).Grid line 1 data line 1 intersects and defines pixel region.Film crystal
Pipe and pixel electrode 3 are installed in this pixel region.Grid line 2 is used for being switched on or off signal, data to thin film transistor (TFT) offer
Line 1 is used for providing data signal to pixel electrode 3, and common electrode wire constitutes storage capacitance with pixel electrode 3.
Specifically, the first metal layer is deposited on substrate, this first metal layer can adopt molybdenum, aluminum, alumel, molybdenum tungsten
The single metal layer of the metals such as alloy, chromium or copper, it would however also be possible to employ the MULTILAYER COMPOSITE layer that above-mentioned single metal layer is constituted.Using covering
Template is patterned to the first metal layer, forms the figure of grid line 2 and common electrode wire on substrate.Grid line 2 is arranged
There is grid (not shown).Common electrode wire includes first electrode line 4 and second electrode line (non-label).First electrode line 4 is flat
Row in the overall structure of grid line 2, second electrode line be perpendicular to grid line 2 intermittent configuration and be located at adjacent two grid lines 2 it
Between.Projection in second metal layer is parallel to each other second electrode line with data wire 1, and first electrode line 4 and data wire 1 are second
Projection on metal level is intersected.Second electrode line includes the first sub-electrode line 5 arranged in parallel and the second sub-electrode line 6.
In each pixel region, common electrode wire is mutually to be interconnected with the first sub-electrode line 5, the second sub-electrode line 6 by first electrode line 4
Connect the H type structure of composition.
Gate insulator is formed on the surface of grid line 2, common electrode wire and substrate, gate insulator is amorphous silicon film
Layer.
In the surface depositing second metal layer of gate insulator, number is formed in described second metal layer using photoetching process
According to line 1, source electrode (not shown) and drain electrode (not shown), described data wire 1 and source electrode are an overall structure.In the present embodiment,
Parallel by the projection in second metal layer with second electrode line for data wire 1, and data wire 1 and first electrode line 4 are in the second metal
Projection on layer is intersected.
Described data wire 1, source electrode, drain and gate surface of insulating layer form passivation layer, described passivation layer is carried out
Etching, forms contact hole (not shown).Specifically, using chemical vapor deposition method described data wire 1, common electrode wire and
Form passivation layer in gate insulator layer surface, afterwards, contact hole, described contact are formed in described passivation layer using photoetching process
Hole position is in the passivation layer of drain electrode top.
Chromatograph (RGB layer) is formed on described passivation layer surface, RGB layer over the passivation layer after film forming through exposure and development, position
In pixel region.In the present embodiment, due to increased RGB layer between transparent electrode layer and the first metal layer, this RGB layer
Thickness, at 3 μm to 5 μm, which adds the distance between transparent electrode layer and the first metal layer, so that between the two
The electric capacity being formed is little, then reduces RC retardation ratio.
Described RGB layer surface forms transparent electrode layer, described transparent electrode layer is performed etching, form pixel electrode
3rd, thin film transistor (TFT) (not shown).Specifically, transparency electrode is formed on described RGB layer surface using physical vapor deposition process
Layer, described transparent electrode layer is transparent metal layer, and making material is tin indium oxide (ITO).Afterwards, using photoetching process transparent
Pixel electrode 3 is formed on electrode layer, described pixel electrode 3 passes through contact hole and drain electrode electrical connection.
In the present embodiment, transparent electrode layer is also formed with connecting line 7.Each two phase in same row pixel region
Connecting line 7 is set between adjacent pixel region, and this connecting line 7 is crossed on the grid line between this two adjacent pixel regions
On 2.One end of connecting line 7 is passed through in contact hole and this pixel region on the passivation layer in the pixel region of grid line 2 side
Second sub-electrode line 6 is connected, and the other end of connecting line 7 passes through connecing on the passivation layer in the pixel region of grid line 2 opposite side
Contact hole is connected with the second sub-electrode line 6 in this pixel region.The second sub-electrode line 6 positioned at grid line 2 both sides passes through to connect
Line 7 connects integral, that is, the common electrode wire being located in adjacent two pixel regions in same row pixel region is passed through to connect
Line 7 connects into the overall common electrode wire (Mesh Com) of grid type.This Mesh Com is so that be located at grid line 2 both sides
Common electrode wire connects, so that the common electrode wire in different pixels region in TFT-LCD array substrate is complete
Connection.Because connecting line 7 is made using tin indium oxide (ITO), it is transparent material, which increases this TFT-LCD array
The light transmittance of substrate, nor light leak can be caused.Additionally, on the first metal layer, common electrode wire is in H type structure, by also planting
The structure design of the transparent electrode layer of structure and its top makes the light transmittance of this TFT-LCD array substrate increase.
Fig. 2 is the schematic diagram of TFT-LCD array substrate repair data line broken string of the present invention.As shown in figure 3, finding out data
The position of the first breakpoint 41 in line 1.First pass through method for laser welding by the data wire 1 of data wire 1 first breakpoint 41 upside
Second sub-electrode line 6 welding adjacent with the right side of it, and form the first welding between this second sub-electrode line 6 and data wire 1
Point 51；Again by the second sub-electrode line 6 welding adjacent with the right side of it for the data wire 1 of the first breakpoint 41 downside, and in this second son
Form the second fusion point 52 between electrode wires 6 and data wire 1.Again will be with the first fusion point 51, the second welding using cutting method
First electrode line 4 in the pixel region of point 52 adjacent both sides cuts off, and forms cut-off point 31,32 respectively, so that the first breakpoint
The common electrode wire isolation of the common electrode wire of 41 place pixel regions and adjacent pixel regions is it is ensured that the transmission of gate line signals.
Using this repair mode, described data wire 1 is made to reconnect by the second sub-electrode line 6.In the present embodiment, second
Sub-electrode line 6 is referred to a strip electrode line or is the two second sub-electrode lines 6 being connected by connecting line 7.
Fig. 3 is the second embodiment schematic diagram of TFT-LCD array substrate repair data broken string of the present invention.As shown in figure 3, looking into
Find out the position that the second breakpoint 15 in data wire 1.First pass through method for laser welding by the data wire 1 of the second breakpoint 15 upside
With first electrode line 4 welding handed in second metal layer upslide shade with it, form the 3rd welding in the point of intersection of both projections
Point 21；Again by the data wire 1 of the second breakpoint 15 downside and another first electrode line 4 handed in second metal layer upslide shade with it
Welding, forms the 4th fusion point 22 in the point of intersection of both projections.Will be adjacent with the 3rd fusion point 21 using laser cutting method
First electrode line 4 in the pixel region of both sides interrupts, and forms cut-off point 11,12, simultaneously by the adjacent both sides of the 4th fusion point 22
First electrode line 4 in pixel region interrupts, and forms cut-off point 13,14；So that being total to of the second breakpoint 15 place pixel region
The common electrode wire isolation of energising polar curve and other pixel regions is it is ensured that the transmission of gate line signals.Using this repair mode, lead to
Cross the second sub-electrode line 6 in first electrode line 4 and this pixel region in a pixel region, connecting line 7 and another
The second sub-electrode line 6 in first electrode line 4 in adjacent pixel regions and this region makes data wire 1 reconnect.Should
The second sub-electrode line 6 in two pixel regions is connected by connecting line 7.
In sum, the present invention by using the common electrode wire in pixel region as repair data line breakpoint on line,
By its data wire welding with data wire breakpoint both sides, simultaneously switch off common electrode wire in the pixel region of breakpoint place with adjacent
The connection of the common electrode wire of pixel region, it is achieved thereby that the reparation of data wire breakpoint.This reparation overcomes tradition reparation
Segment difference problem in method, improves reparation success rate.
It should be appreciated that for those of ordinary skills, can be improved according to the above description or be converted,
And all these modifications and variations all should belong to the protection domain of claims of the present invention.
Claims (5)
1. a kind of TFT-LCD array substrate, including the first metal layer setting gradually from bottom to top, second metal layer and transparent electrical
Pole layer, is formed with grid line and common electrode wire, is formed with data wire in described second metal layer in described the first metal layer, described
Be formed with pixel electrode in transparent electrode layer, described grid line and data wire intersect to form pixel region, described pixel electrode and
Described common electrode wire is installed in described pixel region it is characterised in that described common electrode wire includes interconnective
One electrode wires and second electrode line, the projection in described second metal layer is mutually flat with described data wire for described second electrode line
OK, intersect by the projection in described second metal layer with described data wire for described first electrode line,
Described first electrode line is the overall structure parallel to described grid line, and described second electrode line is perpendicular to described grid line
Intermittent configuration,
Described second electrode line includes the first sub-electrode line arranged in parallel and the second sub-electrode line, described common electrode wire
It is the H type structure being interconnected to constitute by described first sub-electrode line, the second sub-electrode line and first electrode line,
Described TFT-LED array base palte also includes connecting line, and described connecting line is arranged with layer with described pixel electrode, described connection
Line is crossed on described grid line, and one end of described connecting line is connected with the second sub-electrode line of described grid line side, described connection
The other end of line is connected with the second sub-electrode line of described grid line opposite side, and, the first sub-electrode line of described grid line both sides
Do not connected by connecting line.
2. TFT-LCD array substrate according to claim 1 is it is characterised in that be located at every described grid line both sides respectively
Described common electrode wire be interconnected by described connecting line.
3. a kind of broken data wire restorative procedure of TFT-LCD array substrate is it is characterised in that include：
S1, find out data wire breakpoint position；
S2, using method for laser welding, the data wire of described breakpoint both sides is coupled together by common electrode wire；Wherein, described
Common electrode wire includes interconnective first electrode line and second electrode line, and described second electrode line and described data wire are the
Projection on two metal levels is parallel to each other, the described first electrode line and described data wire projection phase in described second metal layer
Hand over, described first electrode line is the overall structure parallel to grid line, and described second electrode line is the interruption perpendicular to described grid line
Structure, described second electrode line includes the first sub-electrode line arranged in parallel and the second sub-electrode line, described common electrode
Line is the H type structure being interconnected to constitute by described first sub-electrode line, the second sub-electrode line and first electrode line, described
TFT-LED array base palte also includes connecting line, and described connecting line is arranged with layer with pixel electrode, and described connecting line is crossed on described
On grid line, one end of described connecting line is connected with the second sub-electrode line of described grid line side, the other end of described connecting line with
Second sub-electrode line of described grid line opposite side connects, and, the first sub-electrode line of described grid line both sides does not pass through connecting line
Connect；Disconnected using laser cutting method in common electrode wire and the adjacent pixel regions in the pixel region of described breakpoint place
The connection of common electrode wire,
Described step S2 includes：
S21, using method for laser welding by the data wire of breakpoint both sides projection phase in described second metal layer with it respectively
The described first electrode line welding handed over, forms fusion point in the point of intersection of described data wire and the projection of described first electrode line；
S22, using laser cutting method by the pixel region of adjacent for described fusion point both sides first electrode line cut off thus
Disconnect the connection of the common electrode wire in the pixel region of described breakpoint place and the common electrode wire in adjacent pixel regions.
4. broken data wire restorative procedure according to claim 3 is it is characterised in that described step S2 includes：
S23, disconnect described data wire by described first electrode line, be connected to described first electrode line and another described first
Second electrode lines that are between electrode wires and connecting and another described first electrode line connection.
5. broken data wire restorative procedure according to claim 3 is it is characterised in that described step S2 also includes：S23、
The described data wire disconnecting is connected by described second electrode line.
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| CN201310747068.1A CN103885262B (en) | 2013-12-30 | 2013-12-30 | TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof |
| PCT/CN2014/070367 WO2015100770A1 (en) | 2013-12-30 | 2014-01-09 | Tft-lcd array substrate and method for repairing broken line of data line thereof |
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| CN201310747068.1A CN103885262B (en) | 2013-12-30 | 2013-12-30 | TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof |
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| CN104298035A (en) * | 2014-09-23 | 2015-01-21 | 京东方科技集团股份有限公司 | Array substrate, method for repairing broken data line of array substrate and display device |
| CN104516133B (en) * | 2015-01-27 | 2017-12-29 | 深圳市华星光电技术有限公司 | The method for repairing disconnected lines of array base palte and the array base palte |
| CN104698707A (en) * | 2015-04-01 | 2015-06-10 | 上海天马微电子有限公司 | Array substrate and manufacturing method thereof and display device |
| CN104932161A (en) * | 2015-06-30 | 2015-09-23 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and restoration method thereof, and display device |
| TWI574394B (en) * | 2016-02-05 | 2017-03-11 | 友達光電股份有限公司 | Self-emission type display and repairing method thereof |
| CN105549281B (en) * | 2016-03-16 | 2018-09-04 | 京东方科技集团股份有限公司 | Array substrate and restorative procedure, display panel and display device |
| CN105970210B (en) * | 2016-05-26 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of break repairing device for wire of array base palte and the broken wire repair method of array base palte |
| CN106353942A (en) * | 2016-10-10 | 2017-01-25 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and restoration method thereof |
| CN106292037B (en) * | 2016-10-10 | 2019-06-14 | 南京中电熊猫液晶显示科技有限公司 | Blue phase liquid crystal array substrate |
| CN106597699A (en) * | 2016-11-25 | 2017-04-26 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and method of manufacturing and restoring the same |
| CN109613772B (en) | 2019-01-03 | 2021-12-10 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method and repairing method thereof and display device |
| CN110376809A (en) * | 2019-06-11 | 2019-10-25 | 惠科股份有限公司 | Broken string repairs structure, display panel and broken wire repair method |
| CN110690225A (en) * | 2019-09-02 | 2020-01-14 | 武汉华星光电半导体显示技术有限公司 | Array substrate, data line breakpoint repairing method thereof and display device |
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| CN103885262A (en) | 2014-06-25 |
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