CN202796849U - Shielding disc and ion implantation device - Google Patents
Shielding disc and ion implantation device Download PDFInfo
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- CN202796849U CN202796849U CN 201220521024 CN201220521024U CN202796849U CN 202796849 U CN202796849 U CN 202796849U CN 201220521024 CN201220521024 CN 201220521024 CN 201220521024 U CN201220521024 U CN 201220521024U CN 202796849 U CN202796849 U CN 202796849U
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- dish
- blocks
- ion implantation
- perforate
- implantation apparatus
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Abstract
The utility model provides a shielding disc and an ion implantation device. The shielding disc having a plurality of open holes can shield ion beams and the like so as to form the ion beams having shapes corresponding to shapes of the open holes. The shaped ion beams are implanted into wafers. By comparing ion implantation shapes on the wafers with the shapes of the open holes on the shielding disc, angles of implantation of the ion beams can be obtained, and then the angles of implantation of the ion beams can be further controlled and adjusted.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, relates in particular to block dish and ion implantation apparatus.
Background technology
Form in the technique of source-drain electrode in semiconductor production, for silicon or silicon thin film being contained the Implantation of impurity, use ion implantation apparatus that the ion species that wafer injects is had phosphorus (P) and boron (B) etc., the gas that will comprise these raw materials is supplied with ion source, then gas is by plasma, P and B ion are drawn the formation ion beam from plasma, and accelerate, thereby wafer is shone ion.The scope of the angle of ion beam and ion diffusion has vital impact for the yield of semiconductor device technology during Implantation.The implant angle difference of ion beam will cause the gate voltage between the regional different components variant, cause the fluctuating of regional intergranule performance and inharmonious, thereby reduce the performance of whole wafer, affect yield.
In the existing ion implantation apparatus, what only block a part blocks dish (such as 1/4 part of blocking whole wafer, expose other 3/4) or without blocking dish, this can not control and regulate the angle that ion beam injects so that can't monitor the angle that ion beam injects in ion implantation process.
The utility model content
The purpose of this utility model is: proposes a kind of dish and ion implantation apparatus of blocking and can block the angle that ion beam and monitoring ion beam inject, thus control and regulate the angle that ion beam injects.
To achieve these goals, a kind of dish that blocks that the utility model proposes comprises: a plurality of radially perpendicular to described perforate of blocking the dish card.
Further, the number of described perforate is more than or equal to 3.
Further, the shape of described perforate is identical or different.
Further, described perforate is shaped as circle, triangle, fan-shaped or polygon.
Further, identical shaped measure-alike or different of described perforate.
Further, described polygonal limit number is more than or equal to 4.
Further, the side wall surface of described perforate and describedly block the angles that dish upper surface or lower surface are 30 degree ~ 45 degree.
Further, described material of blocking dish is carbon fiber.
Further, the described dish that blocks is for circular, and its diameter range is 310mm ~ 350mm.
Further, the described thickness that blocks dish is 1.5mm ~ 3mm.
The utility model also provides a kind of ion implantation apparatus, comprises the above-mentioned dish that blocks.
Further, described ion implantation apparatus also comprises:
Reaction chamber;
Be used for providing the ion source of ion beam, be fixed on the madial wall of described reaction chamber;
Pedestal, bottom are fixed on another madial wall of described reaction chamber;
The electronics chuck, its bottom and described pedestal top are fixed, and its top is relative with described ion source;
Wherein, the described dish that blocks fixes and maintains a certain distance with described electronic cards plate edge.
Further, described base bottom fixes by the madial wall of one-body molded mode and described reaction chamber.
Further, the described electronic cards end of trying to get to the heart of a matter fixes by draw-in groove or screw and described pedestal top.
Further, described ion implantation apparatus also comprises a fixed part, and described fixed part one end is fixed on the edge of described electronics chuck, and the other end is fixedly connected with the described edge that blocks dish.
Further, described fixed part fixes by the edge of welding or the mode such as screw and described electronics chuck.
Further, the described dish that blocks fixes by the mode of draw-in groove and the other end of described fixed part.
Further, described perforate of blocking dish over against the aperture size of electronics chuck one side less than the aperture size over against ion beam one side.
Compared with prior art, what the utility model proposes blocks dish and ion implantation apparatus, and its beneficial effect is mainly reflected in: with the blocking dish and can block ion beam etc. of a plurality of perforates, thereby form the ion beam consistent with hole shape; Make in the ion beam injection wafer with shape, relatively the shape of Implantation is coiled the upward shape of perforate with blocking on the wafer, thus the angle when drawing the ion beam injection, and then the angle of control and the injection of adjusting ion beam.
Description of drawings
Fig. 1 is the vertical view that blocks dish among the utility model embodiment one;
Fig. 2 is the generalized section of blocking the dish side among the utility model embodiment one;
Fig. 3 is the structural representation of the utility model embodiment one intermediate ion injection device;
Fig. 4 is the vertical view that blocks dish among the utility model embodiment two;
Fig. 5 is the generalized section of blocking the dish side among the utility model embodiment two.
Embodiment
For the ease of understanding, below in conjunction with specific embodiment one, two and accompanying drawing the utility model will be further described.
Embodiment one
Please refer to Fig. 1, present embodiment provides a kind of dish 500 that blocks, and comprises that the shape of 510, three perforates 510 of three kinds of difform perforates is respectively triangle, rectangle and circle shape; Block dish 500 for circular, thickness is 1.5mm ~ 3mm, for example is 1.8mm, 2.0mm, 2.5mm; Diameter is 310mm ~ 350mm, for example is 320mm, 330mm, 340mm.
Please refer to Fig. 2, block that perforate 510 presents the radial radiation shape in the dish 500, its madial wall 511 and the upper surface 501 that blocks dish 500 or lower surface 502 all are the angles of 30 degree ~ 45 degree, for example are 35 degree, 40 degree; And perforate 510 is greater than over against the bore size of electronics chuck 300 over against the bore size of ion source 600, can make so the angled ion beam 700 of the effective barrier strip in perforate 510 edges, thereby make the size of the shape in zone on the injection wafer near the size of perforate 510, improve the accuracy that draws ion beam 700 injection crystal column surface angles.
In the present embodiment, blocking dish 500 material is carbon fiber.Its purpose avoids producing particle, pollutes.
Please refer to Fig. 3, present embodiment also provides a kind of above-mentioned ion implantation apparatus that blocks dish 500 of using, and comprising: reaction chamber 100, and pedestal 200, electronics chuck 300, fixed part 400 blocks dish 500, ion source 600.
In the present embodiment, pedestal 200 is fixed on the madial wall of reaction chamber 100 by integrated mode; Electronics chuck 300 and pedestal 200 fix by modes such as screw and draw-in grooves; Fixed part 400 is screwed in electronics chuck 200 outsides, blocks dish 500 and is fixed together by draw-in groove and fixed part 400; Ion source 600 is fixed on another sidewall of reaction chamber 100.
In the ion implantation apparatus use procedure, one wafer is placed on electronics chuck 300 top end surfaces, ion source 600 emitting ions bundles 700, ion beam 700 is by extraction, the processing such as acceleration are radiated at the surface of blocking dish 500, part ion beam 700 shines crystal column surface by the perforate 510 of blocking dish 500, after Implantation is finished, take out wafer, the shape in Implantation zone and block difference between the shape of dish 500 perforates 510 on the wafer relatively, thereby draw the angle that ion beam 700 injects crystal column surfaces, and then the angle when regulating processing procedure or miscellaneous part and adjust ion beam 700 and inject crystal column surface.
Embodiment two
Only have three difformities owing to block the perforate 510 of dish 500 among the embodiment one, ratio to the shape of carrying out Implantation zone on the wafer and the shape difference that blocks dish 500 perforates 510 is easier to occur deviation, and present embodiment has been done small size improvement for blocking dish 500.
Please refer to Fig. 4, the dish 500 ' that blocks that proposes in the present embodiment comprises eight kinds of difform perforates 510 ', and the shape of its perforate 510 ' is respectively triangle, rectangle, circle, decagon (five-pointed star) and dodecagon (Magen David); The thickness that blocks dish 500 ' is 1.5mm ~ 3mm, for example is 1.6mm, 1.9mm, 2.7mm; Diameter is 310mm ~ 350mm, for example is 325mm, 335mm, 345mm.
In the present embodiment, blocking dish 500 material is carbon fiber.Its purpose avoids producing particle, pollutes.
Please refer to Fig. 5, block that perforate 510 ' presents the radial radiation shape in the dish 500 ', its madial wall 511 ' and the upper surface 501 ' that blocks dish 500 ' or lower surface 502 ' all are the angles of 30 degree ~ 45 degree, for example are 37 degree, 42 degree; And perforate 510 ' is greater than over against the bore size of electronics chuck 300 over against the bore size of ion source 600.
Please refer to Fig. 3, present embodiment provides a kind of ion implantation apparatus, comprising: reaction chamber 100, and pedestal 200, electronics chuck 300, fixed part 400 blocks dish 500, ion source 600.
In the present embodiment, pedestal 200 is fixed on the madial wall of reaction chamber 100 by integrated mode; Electronics chuck 300 and pedestal 200 fix by modes such as screw and draw-in grooves; Fixed part 400 is screwed in electronics chuck 200 outsides, blocks dish 500 ' and is fixed together by draw-in groove and fixed part 400; Ion source 600 is fixed on another sidewall of reaction chamber 100.
Because the using method of present embodiment ion implantation apparatus does not change, and just repeats no more its using method at this.
Present embodiment is compared with embodiment one, added how difform perforate owing to block dish, can be good at solving between the shape of the shape in Implantation zone on the wafer and perforate 510 ' diversity ratio than the time deviation that occurs, and then improved the accuracy of angle when drawing Implantation.
In other embodiment of the present utility model, perforate number and the size of blocking on the dish can require to arrange according to craft precision, and preferred, the perforate number is generally greater than 3; The shape and size of each perforate can be identical, also can be different.Wherein, for the shape of perforate, can be not limited to the conventional cognitive regular shape as enumerating among the embodiment one, two, also can be according to special technological requirement arrange irregularly shaped.
In sum, what the utility model proposes blocks dish and ion implantation apparatus, with the blocking dish and can block ion beam etc. of a plurality of perforates, thereby forms the ion beam consistent with hole shape; Make in the ion beam injection wafer with shape, relatively the shape of Implantation is coiled the upward shape of perforate with blocking on the wafer, thus the angle when drawing the ion beam injection, and then the angle of control and the injection of adjusting ion beam.
Only be preferred embodiment of the present utility model in sum, the utility model do not played any restriction.Any person of ordinary skill in the field; in the scope that does not break away from the technical solution of the utility model; technical scheme and technology contents that the utility model discloses are made any type of changes such as replacement or modification that are equal to; all belong to the content that does not break away from the technical solution of the utility model, still belong within the protection range of the present utility model.
Claims (18)
1. one kind blocks dish, it is characterized in that, comprises a plurality of radially perpendicular to described perforate of blocking the dish card.
2. the dish that blocks as claimed in claim 1 is characterized in that, the number of described perforate is more than or equal to 3.
3. the dish that blocks as claimed in claim 1 or 2 is characterized in that, the shape of described perforate is identical or different.
4. the dish that blocks as claimed in claim 3 is characterized in that, described perforate be shaped as circle, triangle, fan-shaped or polygon.
5. the dish that blocks as claimed in claim 3 is characterized in that, identical shaped measure-alike or different of described perforate.
6. the dish that blocks as claimed in claim 3 is characterized in that, described polygonal limit number is more than or equal to 4.
7. the dish that blocks as claimed in claim 1 is characterized in that, the side wall surface of described perforate and describedly block the angles that dish upper surface or lower surface are 30 degree ~ 45 degree.
8. the dish that blocks as claimed in claim 1 is characterized in that, described material of blocking dish is carbon fiber.
9. the dish that blocks as claimed in claim 1 is characterized in that, the described dish that blocks is for circular, and its diameter range is 310mm ~ 350mm.
10. the dish that blocks as claimed in claim 1 is characterized in that, the described thickness that blocks dish is 1.5mm ~ 3mm.
11. an ion implantation apparatus is characterized in that, comprises such as each described dish that blocks in the claim 1 to 10.
12. ion implantation apparatus as claimed in claim 11 is characterized in that, also comprises:
Reaction chamber;
Be used for providing the ion source of ion beam, be fixed on the madial wall of described reaction chamber;
Pedestal, bottom are fixed on another madial wall of described reaction chamber;
The electronics chuck, its bottom and described pedestal top are fixed, and its top is relative with described ion source;
Wherein, the described dish that blocks fixes and maintains a certain distance with described electronic cards plate edge.
13. ion implantation apparatus as claimed in claim 12 is characterized in that, described base bottom fixes by the madial wall of one-body molded mode and described reaction chamber.
14. ion implantation apparatus as claimed in claim 12 is characterized in that, the described electronic cards end of trying to get to the heart of a matter fixes by draw-in groove or screw and described pedestal top.
15. ion implantation apparatus as claimed in claim 12 is characterized in that, also comprises a fixed part, described fixed part one end is fixed on the edge of described electronics chuck, and the other end is fixedly connected with the described edge that blocks dish.
16. ion implantation apparatus as claimed in claim 14 is characterized in that, described fixed part fixes by the edge of welding or the mode such as screw and described electronics chuck.
17. ion implantation apparatus as claimed in claim 15 is characterized in that, the described other end that coils by a draw-in groove and described fixed part that blocks fixes.
18. the dish that blocks as claimed in claim 11 is characterized in that, described perforate of blocking dish over against the aperture size of electronics chuck one side less than the aperture size over against ion beam one side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220521024 CN202796849U (en) | 2012-10-11 | 2012-10-11 | Shielding disc and ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220521024 CN202796849U (en) | 2012-10-11 | 2012-10-11 | Shielding disc and ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202796849U true CN202796849U (en) | 2013-03-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220521024 Expired - Fee Related CN202796849U (en) | 2012-10-11 | 2012-10-11 | Shielding disc and ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202796849U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047724A (en) * | 2019-04-22 | 2019-07-23 | 江苏鲁汶仪器有限公司 | A kind of ion beam etching dual-layered baffle plate |
-
2012
- 2012-10-11 CN CN 201220521024 patent/CN202796849U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047724A (en) * | 2019-04-22 | 2019-07-23 | 江苏鲁汶仪器有限公司 | A kind of ion beam etching dual-layered baffle plate |
| CN110047724B (en) * | 2019-04-22 | 2021-07-27 | 江苏鲁汶仪器有限公司 | Double-layer baffle for ion beam etching |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20181011 |