CN100378920C - Ion mixing device and porous electrode for ion mixing device - Google Patents
Ion mixing device and porous electrode for ion mixing device Download PDFInfo
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- CN100378920C CN100378920C CNB03156660XA CN03156660A CN100378920C CN 100378920 C CN100378920 C CN 100378920C CN B03156660X A CNB03156660X A CN B03156660XA CN 03156660 A CN03156660 A CN 03156660A CN 100378920 C CN100378920 C CN 100378920C
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- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 38
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
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Abstract
With the object of suppressing dispersion in the dose of ion implantation within a narrow range in a direction orthogonal to the scan direction of a substrate, an ion doping apparatus irradiates the substrate to-be-scanned with ion beams which are drawn out from multi-apertured electrodes (200) each being provided with a large number of electrode apertures (210). In electrode aperture groups alpha, . . . of the multi-apertured electrode (200), each including a plurality of electrode apertures (210), the individual electrode apertures (210) are arranged having positional shifts in the direction Y orthogonal to the scan direction X of the substrate (300) so as to homogenize the doses of ion beam implantations into the substrate (300) by the electrode aperture groups alpha, . . . .
Description
Technical field
The present invention relates to the ion doping device of use when manufacturings such as low temperature polycrystalline silicon liquid crystal display screen, relate to the ion doping device that carries out ion doping by the big substrate of scanning area more in detail.
Background technology
When on large-scale substrates such as low temperature polycrystalline silicon liquid crystal, forming TFT, be to use the ion doping device in the purpose implanted dopant with source electrode, drain electrode and LDD zone that forms TFT and the critical value of controlling TFT.
The size of the object substrate of ion doping is shone the ion beam bigger than the big small size of substrate, substrate is carried out ion doping in the lump when the 500mm square is following.At this moment in order to make the ion injection have uniformity and have the people to advise making the method for substrate rotation.
Makeup puts that to put down into 8 years No. 227685 communique as Japan's patent disclosure communique disclosed as the even ion beam of prior art, and the device that the substrate of the irradiation of making is longitudinal and transverse or tiltedly shake is arranged.
Said apparatus need enlarge ion beam when carrying out ion doping on the size substrate bigger than 500mm square area is bigger than the size of substrate, so ion source becomes the problem that greatly, for this reason has the whole maximization of device.
When therefore on big substrate, carrying out ion doping, the ion beam of rectangle is compared uniform ion bundle integral body as easy formation shine, carry out the uniform ion doping by scanning this substrate to substrate.
When shining the ion beam of this rectangle, also have to use the method for seam shape outlet electrode is set to drawing ion beam, but the uniformity of ion beam on, the length direction that is difficult to guarantee to stitch different with the convergence of end ion beam at the central portion of seam.Therefore adopt the method for using the porous electrode that forms a plurality of circular electrodes hole as shown in Figure 5.
B forms row to this porous electrode shown in Figure 5 200 at regular intervals abreast the scanning direction X (being called " longitudinal direction " during the explanation of back sometimes) of the electrode hole 210 of a plurality of circles and substrate, this is listed on the direction Y (being called " transverse direction " during the explanation of back sometimes) with described scanning direction quadrature multiple row is set.At stagger half c of described interval b of the electrode hole 210 of this row electrode hole 210 and adjacent column.A configuration at regular intervals mutually between the row of electrode hole 210.When being described more specifically be exactly diameter d be 5mm the electrode hole longitudinal direction by 10mm at interval (b) form row, this row transverse direction press 5mm at interval (a) locate.And electrode hole 210 longitudinal directions of the adjacent column 5mm (c) that staggers.
It is circular having the ion beam shape that the porous electrode 200 in above-mentioned circular electrode hole 210 draws from circular electrode hole 210, so by arranging circular electrode hole 210 advantage of guaranteeing to restraint on the whole density uniformity easily in the face of substrate is arranged.
But overlapping by carrying out circular ion beam, according to the convergence state of each ion beam of drawing since electrode hole 210, produce the deviation of transverse direction Y narrow range.If the arrangement of electrode hole 210 promptly shown in Figure 5, thus then because the row of electrode hole 210 and scanning direction X be arranged in parallel should row part the ion injection rate many and be listed as between the ion injection rate tail off, the problem of transverse direction Y generation periodicity ion injection rate deviation is arranged.
The present invention puts in view of the above problems and proposes, with the deviation that suppresses narrow range ion injection rate as problem.
Summary of the invention
The present invention proposes for solving above-mentioned problem, the feature of ion doping device of the present invention is: have and make the ion beam of drawing from the electrode that the is provided with a plurality of holes structure to the substrate irradiation of scanning, electrode has the electrode hole group who is made of a plurality of electrode holes, each electrode hole of this electrode hole group with the direction of the scanning direction quadrature of substrate on staggered positions arrange.
The ion doping device, the ion beam that constitute according to described structure are drawn to scanning substrate from electrode hole and are shone, but because the electrode hole staggered positions is provided with, so it is homogenized that the density of ion beam goes up at the orthogonal direction (back singly is called " scanning orthogonal direction " sometimes) of substrate scanning direction, also can suppress the deviation of ion injection rate in narrow range.
It is whole electrode hole group of formation of electrode hole of porous electrode that the present invention promptly can only be arranged to one to " electrode hole group ", also can be distinguished into a plurality of electrode hole groups to the electrode hole of porous electrode according to the density of an ion beam of each electrode hole.
The density of an ion beam that is each electrode hole is unfixing, for example produces about 80% density contrast sometimes between the central portion of substrate scanning direction and end.Relevant situation be as a whole an electrode hole group in electrode hole staggered positions when configuration fifty-fifty, electrode hole part and the low density electrode hole high in density partly produce the poor of some ion injection rates.Therefore for example the electrode hole at the electrode hole of substrate scanning direction central portion and its both ends is distinguished among different electrode hole groups, separately the electrode hole group and makes each electrode hole staggered positions, so more can suppress the deviation of ion injection rate.
A plurality of kind electrode hole group times that are provided with, the interstitial site of scanning orthogonal direction preferably disposes other electrode holes group's electrode hole scanning orthogonal direction position between the electrode hole that constitutes an electrode hole group.The electrode hole that is exactly for example scanning direction contre electrode hole group specifically is when the scanning orthogonal direction staggers configuration by each predetermined distance, and tip electrodes hole group's electrode hole is preferably in configuration scanning orthogonal direction position between this interval.Be that the high electrode hole group's of density ion injection rate is because the part that exists at electrode hole produces different with the non-existent gap portion of electrode hole, inject so can carry out the ion of other electrode holes group electrode hole at the non-existent gap portion of its electrode hole, can make more homogenizing of ion injection rate.
The present invention arranges electrode hole and has considered various configurations for " staggered positions ", for example by all electrode holes that constitute the electrode hole group are configured to different scanning orthogonal direction positions respectively, also can make " staggering in the position ".
When electrode hole disposes regularly, can be configured to the electrode hole that constitutes the electrode hole group to be listed as, to be provided with in the scanning direction of substrate the row of this electrode hole, the row that make this electrode hole have inclination to the scanning direction of substrate.No matter the electrode hole group is set up when a plurality of or the electrode hole group can both be suitable for when being one in the scanning direction
If have the row of electrode hole the ion injection rate of the electrode hole integral body that constitutes these row when disposing obliquely to be dispersed on the scanning orthogonal direction to the scanning direction of substrate like this.And the electrode hole that preferably is configured to constitute an end in certain row electrode hole and the electrode hole that constitutes the other end in the adjacent column electrode hole are approximately identical at other in the distance of scanning orthogonal direction and hold on one side and the same column electrode hole of the adjacency distance at the scanning orthogonal direction.More specifically say to be exactly that the interval b that for example constitutes between the electrode hole of row on the direction that forms row in accordance with regulations becomes row, the electrode hole that forms an end in the electrode hole of these row and the other end electrode hole be that the angle of preferably being arranged to be listed as by arctan (a/ (B+b)) during a location at interval in accordance with regulations between the row of B, electrode hole on the orthogonal direction that forms column direction has inclination to the scanning direction at interval.
Porous electrode is preferably so that a plurality of electrode holes can form the mode of the ion beam of rectangle as a whole is provided with among the present invention.When being arranged to like this form the rectangle ion beam, preferably be arranged to the scanning direction, an edge of ion beam rectangle, can prevent like this ion beam irradiation to unnecessary portions, efficiently carry out ion doping and handle.Promptly also can be used as ion doping device of the present invention, but the shortcoming that ion source self is maximized is arranged tilting to install in the scanning direction as the such porous electrode of Fig. 5 shown in the prior art example.Therefore preferably use electrode hole to form the position and stagger, be arranged to form the porous electrode of rectangle ion beam, can eliminate above-mentioned shortcoming like this as electrode hole integral body.
Ion doping device of the present invention with the feature of porous electrode is: in order to draw the ion beam of rectangle as a whole, described electrode has the electrode hole group who is made of a plurality of electrode holes, and each electrode hole of this electrode hole group becomes the direction staggered positions configuration on one side of described rectangle.
Relevant porous electrode obtains the advantage same with the ion doping device of the invention described above, can carry out ion doping processing efficiently simultaneously by the another side scanning direction substrate along the ion beam rectangle.
Porous electrode of the present invention is the same with the ion doping device of having stated of the present invention, each electrode hole preferably is divided into a plurality of electrode hole groups according to its density region, the electrode hole that constitutes the electrode hole group is configured to row on the another side direction of rectangle, the row that the row that dispose this electrode hole preferably make this electrode hole have obliquely the another side direction of rectangle and are provided with.
Electrode hole is divided into a plurality of electrode hole groups according to the density of an ion beam distributed area of each electrode hole the ion doping device of having stated like this and the electrode hole that constitutes each electrode hole group are configured to be listed as, to make this electrode hole on the scanning direction of substrate row have the invention of the ion doping device that is obliquely installed can obtain same advantage to the scanning direction of substrate.
Description of drawings
Fig. 1 is the diagrammatic illustration figure that uses for explanation embodiment of the invention ion doping device overall structure;
Fig. 2 arranges the key diagram of usefulness for explanation first embodiment of the invention porous electrode;
Fig. 3 arranges the key diagram of usefulness for explanation second embodiment of the invention porous electrode;
Fig. 4 has represented to confirm the inhomogeneity experimental result of porous electrode ion injection rate of each embodiment and prior art example.
Fig. 5 is for the key diagram of porous electrode arrangement usefulness of the prior art is described;
Embodiment
To accompanying drawing 4 limits explanation embodiments of the invention, at first the limit is with reference to the overall structure of accompanying drawing 1 limit explanation ion doping device with reference to accompanying drawing 1 on following limit.
The ion doping device 100 of present embodiment uses 4 porous electrodes 200 that generate chamber 110 from plasma that ion is drawn acceleration, makes this ion beam to scanning substrate 300 irradiations.At this, at a plurality of electrode holes 210 of formation that exist together mutually, a plurality of electrode holes 210 are so that be provided with as the electrode hole 210 whole modes that form the ion beam of rectangles on each porous electrode 200.
(first embodiment)
Following limit illustrates first embodiment of the porous electrode 200 that uses in the described ion doping device 100 with reference to accompanying drawing 2 limits.Fig. 2 has omitted a part in the scanning orthogonal direction.
The porous electrode 200 of first embodiment is distinguished into a plurality of electrode hole group α, β, γ to a plurality of electrode holes 210 on the X of scanning direction, electrode hole group's electrode hole 210 is set, makes electrode hole group's electrode hole 210 different with other electrode holes group's electrode hole 210 in the configuration of the orthogonal direction Y of scanning.Be exactly that these a plurality of electrode holes 210 are distinguished into three electrode hole group α, β, γ specifically, be distinguished into the electrode hole group β of scanning direction X central portion and electrode hole group α, the γ at both ends.Being present embodiment is distinguished into a plurality of electrode hole group α, β, γ according to the density of an ion beam of electrode hole 210.This is because the density of the electrode hole 210 of the scanning direction X central portion of substrate 300 and electrode hole 210 its bundles of end has poor about 80%, so a plurality of electrode holes 210 are distinguished into three groups.Present embodiment has illustrated and has been distinguished into three groups, designs more sectionalization differentiation but also can suitably change.
Each electrode hole 210 is 5mm for circular, its diameter d.
The electrode hole 210 of each electrode hole group α, β, γ forms row (and the back will be narrated, this is listed in scanning direction X inclination is arranged) along scanning direction X interval b in accordance with regulations.The row of the electrode hole 210 of described each electrode hole group α, β, γ are arranged along scanning orthogonal direction Y interval a in accordance with regulations.At the interval of this regulation a is that 5mm, b are 10mm.
Stagger mutually on the X of scanning direction half c (5mm) of described interval b of electrode hole 210 of each row and the electrode hole 210 of adjacent column, the adjacent electrode hole 210 of two row is configured to be positioned at same position on the X of scanning direction.Interval a (5mm) configuration to stipulate mutually on scanning orthogonal direction Y between the row of electrode hole 210.This columns can suitably change design, for example can be decided to be 28 row.
The electrode hole group β that when saying the configuration of each electrode hole 210 is more detailed is central authorities is that eight electrode holes 210 form row, and each electrode hole 210 forms on the position of the 0.625mm that staggers in turn at scanning orthogonal direction Y with electrode hole 210 in abutting connection with same column.In other words, in abutting connection with between the electrode hole 210 of same column in the quantity (8) of the interval a/ one row electrode hole 210 between electrode hole 210 row that only staggers on the scanning orthogonal direction Y.Therefore row formation direction and scanning direction X have inclination.
Each electrode hole 210 of contre electrode hole group β makes this electrode hole group β to the ion beam injection quantitative change of substrate 300 each electrode hole 210 is set equably in the configuration of the scanning orthogonal direction Y of substrate 300 staggered positions like this.
Electrode hole group α, the γ at both ends is that four electrode holes 210 form row, a distolateral electrode hole 210 is formed on from the distolateral electrode hole 210 of central electrode hole group β one to one of scanning direction X distolateral L1 (45mm) position among the electrode hole group α of one end, a plurality of electrode holes 210 as previously mentioned on the X of scanning direction in accordance with regulations interval b form row.A distolateral electrode hole 210 forms from the distolateral electrode hole 210 of central electrode hole group β one on another distolateral L2 of scanning direction X (85mm) position among the electrode hole group γ of the other end, a plurality of electrode holes 210 as previously mentioned on the X of scanning direction in accordance with regulations interval b form row.
The electrode hole group α of one end forms than the contre electrode hole group β predetermined distance P1 that only staggers on scanning orthogonal direction Y as a whole, be exactly specifically the distolateral electrode hole 210 of a tip electrodes hole group α than the distolateral electrode hole 210 of contre electrode hole group β one in the formation of the only 5mm place on Fig. 1 right side.The electrode hole group γ of the other end forms than the contre electrode hole group β predetermined distance P2 that only staggers on scanning orthogonal direction Y as a whole, be exactly specifically the distolateral electrode hole 210 of the other end electrode hole group γ than the distolateral electrode hole 210 of contre electrode hole group β one in the formation of the only 10mm place on right side.The electrode hole group γ that is the other end only forms in the side (right side) of scanning orthogonal direction Y apart from (P2-P1) in accordance with regulations than a tip electrodes hole group α as a whole.
At this interval a that to establish P1 be electrode hole 210 on scanning orthogonal direction Y, establish the twice that P2 is described interval a, for example also can be decided to be a/16 to P1, P2 is decided to be 9a/16.So just in the group β of contre electrode hole, disposed the electrode hole 210 that there are both ends electrode hole group α, γ in the position on the centre position in the scanning orthogonal direction Y gap of electrode hole 210.
Each electrode hole 210 of one tip electrodes hole group α forms on the position of the 0.625mm that staggers in turn at scanning orthogonal direction Y with electrode hole 210 in abutting connection with same column.Similarly each electrode hole 210 of the other end electrode hole group γ also forms on the position of the 0.625mm that staggers in turn at scanning orthogonal direction Y with the electrode hole 210 of adjacency same column.In other words, scanning on the orthogonal direction Y total (8) of a row electrode hole 210 among electrode hole group α, the γ at the a/ both ends, interval between electrode hole 210 row of only staggering between the electrode hole 210 that becomes to be listed as among electrode hole group α, the γ at both ends.Therefore the row of both ends electrode hole group α, γ formation direction and scanning direction X have inclination.
Like this each electrode hole 210 of both ends electrode hole group α, γ with the direction of the scanning direction X quadrature of substrate 300 on the staggered positions configuration so that this electrode hole group α, γ become to the ion beam injection rate of substrate 300 each electrode hole 210 is set equably.
(second embodiment)
Following limit illustrates second embodiment of the porous electrode 200 of described ion doping device 100 with reference to Fig. 3 limit.Just has same structure with first embodiment among second embodiment or function is omitted its detailed description.
The porous electrode 200 of second embodiment is set,, makes all electrode holes 210 different with other electrode hole 210 in the configuration of scanning orthogonal direction Y so that a plurality of electrode holes 210 are regarded as an electrode hole group.Be exactly described a plurality of electrode hole 210 specifically and porous electrode shown in Figure 5 200 is had have the installment state of inclination to become identical arrangement to scanning direction X.Promptly can tilt the arrangement that obtains second embodiment is installed, also can obtain the arrangement of second embodiment by the electrode hole 210 that wears same arrangement by porous electrode 200 Fig. 5.
The configuration of this electrode hole 210 is to form on the direction in accordance with regulations at interval at the row that have regulation to tilt with scanning direction X that b (10mm) forms row to a plurality of electrode holes 210, and this is listed in and is listed as a plurality of configurations of a (5mm) at interval in accordance with regulations on the direction that forms the direction quadrature.Electrode hole 210 of each row forms on the direction stagger half c (5mm) of described interval b of electrode hole 210 with adjacent column at row, and the electrode hole 210 that two row are adjacent forms on the direction at row is arranged to be positioned at same position.
When the distance between the electrode hole 210 that is set in the same column two ends was B, the inclination that then described row form direction and scanning direction X was that the angle that electrode hole 210 is arranged to be listed as by arctan (a/ (B+b)) is had inclination to scanning direction X.Be exactly to become arctan (5/90)=3.18 degree specifically, though this angle and experiment have different about 0.1 degree, it is big poor not produce on the ion injection rate.Make their configurations on scanning orthogonal direction Y different by taking above-mentioned arrangement that all electrode holes 210 are set.
(comparison)
Then the ion injection rate uniformity of the porous electrode 200 of described first embodiment, second embodiment and prior art example is confirmed that experimental result is illustrated among Fig. 4.This experiment is decided to be extraction voltage than common high 2Kv, is with each above-mentioned porous electrode 200,950 ℃ of 30 minutes annealing backs of the silicon chip that carries out ion doping, in the result who scans the interval thin plate resistance of measuring 1mm interval 25mm on the orthogonal direction Y.During periodicity deviation first embodiment in 25mm interval is below 0.9%, is below 3.1% during second embodiment, the prior art example then be 26.6%.
(other embodiment)
The present invention is not limited to the concrete structure of the various embodiments described above, can suitably change design in the scope that the invention is intended to.
Be in the various embodiments described above a plurality of electrode holes 210 to be disposed regularly, but the present invention not necessarily is defined in this, as long as be in the scope that the staggered positions configuration just the invention is intended on the orthogonal direction of substrate 300 scanning direction X for the electrode hole group evenly makes each electrode hole 210 to the ion beam injection rate of substrate 300.
Specifically, though be in the scanning direction or row form on the direction a plurality of electrode holes 210 formed row, this be listed in scan that the situation with same arranged spaced is illustrated on the orthogonal direction with same arranged spaced, even but for example dispose self do not have regular to be provided with randomly, for example be the electrode hole group that distinguishes according to the density of bundle for to the ion beam injection rate of substrate 300 evenly, each electrode hole 210 is staggered positions, also is in the scope that the invention is intended to.The number that also is not limited to each row electrode hole as above-mentioned embodiment when forming row is identical, and for example forming the row that are made of two electrode holes 210 in the left side of the other end electrode hole 210 of the other end electrode hole group γ among first embodiment also is suitably to change the item of design.
It is four that ion doping device 100 of the present invention is not limited to porous electrode 200, and for example having three porous electrodes 200 also is in the scope that the invention is intended to.
Claims (7)
1. ion doping device, it is characterized in that: have and make the ion beam of drawing from the electrode that is provided with a plurality of holes structure to the scanning substrate irradiation, described electrode has the electrode hole group who is made of a plurality of electrode holes, each electrode hole of this electrode hole group with the direction of substrate scanning direction quadrature on the staggered positions configuration.
2. ion doping device as claimed in claim 1 is characterized in that: described a plurality of electrode holes are divided into a plurality of electrode hole groups according to the density region of the ion beam of each electrode hole.
3. ion doping device as claimed in claim 1 or 2 is characterized in that: the electrode hole that constitutes each electrode hole group is configured to row on the scanning direction of substrate, and the row of this electrode hole are set, and the row that make this electrode hole have inclination to the scanning direction of substrate.
4. ion doping device, it is characterized in that: have and make the ion beam of drawing from the electrode that is provided with a plurality of holes structure to the scanning substrate irradiation, electrode hole is configured to row on the scanning direction of substrate, the row of this electrode hole are set, and the row that make this electrode hole have inclination to the scanning direction of substrate.
5. ion doping device porous electrode, it is characterized in that: a plurality of electrode holes are set for drawing the rectangle ion beam as a whole, described electrode has the electrode hole group who is made of a plurality of electrode holes, and each electrode hole of this electrode hole group is the staggered positions configuration on described rectangle direction on one side.
6. ion doping device porous electrode as claimed in claim 5 is characterized in that: described a plurality of electrode holes are divided into a plurality of electrode hole groups according to the density region of its ion beam.
7. as claim 5 or 6 described ion doping device porous electrodes, it is characterized in that: the electrode hole that constitutes described electrode hole group is configured to row on the direction of described rectangle another side, the row of this electrode hole are set, and the row that make this electrode hole have inclination to the direction of rectangle another side.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP261139/2002 | 2002-09-06 | ||
| JP261139/02 | 2002-09-06 | ||
| JP2002261139A JP4443816B2 (en) | 2002-09-06 | 2002-09-06 | Ion doping apparatus and porous electrode for ion doping apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1495858A CN1495858A (en) | 2004-05-12 |
| CN100378920C true CN100378920C (en) | 2008-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03156660XA Expired - Fee Related CN100378920C (en) | 2002-09-06 | 2003-09-08 | Ion mixing device and porous electrode for ion mixing device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6972418B2 (en) |
| JP (1) | JP4443816B2 (en) |
| KR (1) | KR100866360B1 (en) |
| CN (1) | CN100378920C (en) |
| TW (1) | TWI267890B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4648802B2 (en) * | 2005-09-02 | 2011-03-09 | 株式会社ブリヂストン | Electron beam irradiation device |
| JP2007251038A (en) * | 2006-03-17 | 2007-09-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| US8900982B2 (en) | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US9006688B2 (en) * | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
| CN102486985B (en) * | 2010-12-03 | 2014-07-30 | 上海凯世通半导体有限公司 | Ion source device |
| JP6721486B2 (en) * | 2016-10-18 | 2020-07-15 | 東京エレクトロン株式会社 | Ion beam irradiation device and substrate processing device |
| CN111708466B (en) * | 2020-07-28 | 2023-04-14 | 武汉天马微电子有限公司 | Touch display panel and display device |
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| JP2000011905A (en) * | 1998-06-19 | 2000-01-14 | Japan Aviation Electronics Ind Ltd | Ion gun grid |
| JP2002216700A (en) * | 2001-01-19 | 2002-08-02 | Sumitomo Eaton Noba Kk | Ion implanting device and method for adjusting ion source system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5817548A (en) * | 1995-11-10 | 1998-10-06 | Sony Corporation | Method for fabricating thin film transistor device |
| US20040002202A1 (en) * | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
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- 2002-09-06 JP JP2002261139A patent/JP4443816B2/en not_active Expired - Fee Related
-
2003
- 2003-09-04 US US10/654,437 patent/US6972418B2/en not_active Expired - Lifetime
- 2003-09-06 KR KR1020030062330A patent/KR100866360B1/en active IP Right Grant
- 2003-09-08 TW TW092124869A patent/TWI267890B/en not_active IP Right Cessation
- 2003-09-08 CN CNB03156660XA patent/CN100378920C/en not_active Expired - Fee Related
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|---|---|---|---|---|
| US5023458A (en) * | 1989-01-04 | 1991-06-11 | Eaton Corporation | Ion beam control system |
| JPH1010300A (en) * | 1996-06-20 | 1998-01-16 | Natl Aerospace Lab | Charged particle beam generator |
| JPH11329268A (en) * | 1998-05-13 | 1999-11-30 | Hitachi Ltd | Ion source, neutral particle beam-incident device for nuclear fusion reactor, and ion beam processing device |
| JP2000011905A (en) * | 1998-06-19 | 2000-01-14 | Japan Aviation Electronics Ind Ltd | Ion gun grid |
| JP2002216700A (en) * | 2001-01-19 | 2002-08-02 | Sumitomo Eaton Noba Kk | Ion implanting device and method for adjusting ion source system |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040195524A1 (en) | 2004-10-07 |
| JP2004103313A (en) | 2004-04-02 |
| KR100866360B1 (en) | 2008-11-03 |
| KR20040022402A (en) | 2004-03-12 |
| TW200414264A (en) | 2004-08-01 |
| US6972418B2 (en) | 2005-12-06 |
| JP4443816B2 (en) | 2010-03-31 |
| TWI267890B (en) | 2006-12-01 |
| CN1495858A (en) | 2004-05-12 |
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