CN202794782U - Alternately wiring contact terminal pair - Google Patents
Alternately wiring contact terminal pair Download PDFInfo
- Publication number
- CN202794782U CN202794782U CN 201220389387 CN201220389387U CN202794782U CN 202794782 U CN202794782 U CN 202794782U CN 201220389387 CN201220389387 CN 201220389387 CN 201220389387 U CN201220389387 U CN 201220389387U CN 202794782 U CN202794782 U CN 202794782U
- Authority
- CN
- China
- Prior art keywords
- contact terminal
- metal level
- insulation course
- metal
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses an alternately wiring contact terminal pair which comprises a first contact terminal and a second contact terminal adjacent to the first contact terminal, wherein the first contact terminal comprises a substrate, a first metal layer, a first insulating layer, a second insulating layer and a connecting electrode; the second contact terminal comprises a substrate, a first insulating layer, a second metal layer, a second insulating layer and a connecting electrode; the contact terminal pair further comprises a third metal layer and/or a fourth metal layer; and the third metal layer is located between the first insulating layer and the second insulating layer of the first contact terminal, the fourth metal layer is located between the substrate and the first insulating layer of the second contact terminal and located below the second metal layer of the second contact terminal, and accumulative thickness of metal layers of the first contact terminal and the second contact terminal are identical. The alternately wiring contact terminal pair solves the problem that the contact terminal pair is in poor contact with integrated circuit (IC) base pins.
Description
Technical field
The utility model relates to the display panels technical field, relates in particular to a kind of contact terminal of alternately wiring to (Bonding Pad).
Background technology
At present, along with the progressively development of lcd technology, the resolution of liquid crystal panel is more and more higher, and the IC contact terminal in the liquid crystal panel is more and more, therefore for the packed wiring space, usually the IC lead-in wire is adopted the alternately mode of wiring.
As shown in Figure 1, IC lead-in wire adjacent contact terminal connects up with the form that grid (Gate) metal level 11 and source drain (SD) metal level 12 replace to taking respectively.The right schematic cross-section of described adjacent contact terminal as shown in Figure 2, described Gate metal level 11 is arranged on the substrate 8, by the via hole of gate insulator 13 and passivation layer 14, is derived by tin indium oxide (ITO) pixel electrode 5; Described the second metal level (SD metal level) 12 is arranged on the gate insulator 13, is derived by connecting electrode 5 by the via hole of passivation layer 14.
Described contact terminal is to linking to each other with IC pin one 7 by the conducting sphere 16 in the anisotropy conductiving glue (ACF), and conducting sphere 16 stressed homogeneitys are key factors that determine the electric conductivity quality.But, sometimes contact terminal is selected different metal materials to the Gate metal level 11 in (being two adjacent contact terminals) with the second metal level (SD metal level) 12, the thickness of two metal levels is different, thereby cause contact terminal also different from the contact situation of conducting sphere 16 to (being two adjacent contact terminals), situation as shown in Figure 3.Phenomenon with 7 loose contacts of IC pin one will appear in the contact terminal that the metal level of thinner thickness is corresponding (for example left side contacts terminal of Fig. 3), so that the quality of liquid crystal panel will be affected.
The utility model content
In view of this, fundamental purpose of the present utility model is to provide a kind of contact terminal pair of alternately wiring, is used for solving the problem of contact terminal pair and the loose contact of IC pin.
For achieving the above object, the technical solution of the utility model is achieved in that
The utility model provides a kind of contact terminal pair of alternately wiring, and described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the second insulation course on described the first insulation course, be positioned at the connecting electrode on described the second insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to comprising: the 3rd metal level and the 4th metal level; Described the 3rd metal level is between described first insulation course and described the second insulation course of described the first contact terminal, and described the 4th metal level is between the described substrate and described the first insulation course of described the second contact terminal; Described the 3rd metal level is connected with described the first metal layer by the via hole of described the first insulation course, and described the 3rd metal level is connected with described connecting electrode by the via hole of described the second insulation course;
The thickness sum of the thickness of described the 4th metal level and described the second metal level equals the thickness sum of thickness and described the 3rd metal level of described the first metal layer.
Preferably, described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
Preferably, described the 3rd metal level and described the second metal level adopt same material, and described the 4th metal level and described the first metal layer adopt same material.
Preferably, described contact terminal is identical to the thickness of the thickness that comprises described the 4th metal level and described the first metal layer; The thickness of described the 3rd metal level is identical with the thickness of described the second metal level.
Preferably, described the first contact terminal contact terminal that is controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.
The present invention further provides a kind of contact terminal pair of alternately wiring, described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the second insulation course on described the first insulation course, be positioned at the connecting electrode on described the second insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to also comprising: the 3rd metal level, and described the 3rd metal level is between described first insulation course and described the second insulation course of described the first contact terminal; The thickness of described second metal level of described the second contact terminal equals the thickness of described the first metal layer of described the first contact terminal and the thickness sum of described the 3rd metal level.
Preferably, described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
Preferably, described the 3rd metal level and described the second metal level adopt same material.
Preferably, described the first contact terminal contact terminal that is controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.
The present invention further provides a kind of contact terminal pair of alternately wiring, described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the connecting electrode on described the first insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to also comprising: the 4th metal level; Described the 4th metal level is between the described substrate and described the first insulation course of described the second contact terminal; The thickness sum of the thickness of described the 4th metal level and described the second metal level equals the thickness of described the first metal layer.
Preferably, described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
Preferably, described the 4th metal level and described the first metal layer adopt same material.
Preferably, further comprise the second insulation course between the connecting electrode of described the first contact terminal and described the first insulation course.
Preferably, described the first contact terminal contact terminal that is controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.The contact terminal of the described alternately wiring of the utility model embodiment pair, specifically can above the first metal layer of the first contact terminal, the 3rd metal level be set, and below the second metal level of the second contact terminal, the 4th metal level is set, and the thickness sum of the first metal layer of the first contact terminal and the 3rd metal level equals the thickness sum of the second metal level and the 4th metal level of the second contact terminal, and the thickness of the first insulation course and the second insulation course does not become, the connecting electrode of adjacent contact terminal---the first contact terminal and the second contact terminal has identical height, so that contact terminal is pair identical with the contact situation of IC pin.The contact terminal of alternately wiring provided by the utility model pair, specifically also the 3rd metal level can only be set on the first metal layer of the first contact terminal, and the thickness sum of the first metal layer of the first contact terminal and the 3rd metal level equals the thickness of the second metal level of the second contact terminal, and the thickness of the first insulation course and the second insulation course does not become, the connecting electrode of the first contact terminal and the second contact terminal has identical height, so that contact terminal is pair identical with the contact situation of IC pin.The contact terminal of alternately wiring provided by the utility model pair, specifically can also only under the second metal level of the second contact terminal, the 4th metal level be set, and the second metal level of the second contact terminal and the thickness sum of the 4th metal level equal the thickness of the first metal layer of the first contact terminal, and the thickness of the first insulation course and the second insulation course does not become, the connecting electrode of the first contact terminal and the second contact terminal has identical height, so that contact terminal is pair identical with the contact situation of IC pin.Therefore, the contact terminal of the described alternately wiring of the utility model embodiment is to having solved the problem of contact terminal pair and the loose contact of IC pin, thus the quality of raising liquid crystal panel.
Description of drawings
Fig. 1 replaces the contact terminal of wiring to the planar structure synoptic diagram for existing IC lead-in wire;
Fig. 2 is the schematic cross-section of existing adjacent two contact terminals (contact terminal to);
Fig. 3 is the structural representation during pair with the loose contact of IC pin for existing contact terminal;
Fig. 4 is the alternately right schematic cross-section of contact terminal of wiring of the utility model the first embodiment;
Fig. 5 is the alternately right schematic cross-section of contact terminal of wiring of the utility model the second embodiment;
Fig. 6 is the alternately right schematic cross-section of contact terminal of wiring of the utility model the 3rd embodiment.
Embodiment
Fundamental purpose of the present utility model is to provide a kind of contact terminal pair of alternately wiring, is used for solving the problem of contact terminal pair and the loose contact of IC pin.
Below in conjunction with drawings and the specific embodiments the utility model is described in further detail.
Referring to Fig. 4, this figure is the alternately right schematic cross-section of contact terminal of wiring of the utility model the first embodiment.
The contact terminal that the utility model the first embodiment alternately connects up is to comprising: the first adjacent contact terminal (referring to the figure in left side among Fig. 3) and the second contact terminal (referring to the figure on right side among Fig. 3).
The described contact terminal of the utility model the first embodiment is to also comprising: the 3rd metal level 10 and the 4th metal level 9.
Particularly, described the first contact terminal comprises substrate 8, be positioned at the first metal layer 1 of described substrate 8 tops, be positioned at the first insulation course 3 on the described the first metal layer 1, be positioned at the 3rd metal level 10 on described the first insulation course 3, is positioned at the second insulation course 4 on described the 3rd metal level 10 and is positioned at connecting electrode 5 on described the second insulation course 4.
Described the second contact terminal comprises substrate 8, be positioned at the 4th metal level 9 on the described substrate 8, be positioned at the first insulation course 3 on described the 4th metal level 9, be positioned at the second metal level 2 on described the first insulation course 3, be positioned at the second insulation course 4 on described the second metal level 2 and be positioned at connecting electrode 5 on described the second insulation course 4.
In order to guarantee that the described contact terminal of the utility model the first embodiment pair contacts well with the IC pin, the thickness sum of the thickness of the 4th metal level 9 of the second contact terminal and the second metal level 2 equals the thickness of the first metal layer 1 of the first contact terminal and the thickness sum of the 3rd metal level 10.
The utility model the first embodiment alternately the contact terminal of wiring between with the first insulation course 3 of the first contact terminal of the first metal layer 1 wiring and the second insulation course 4, the 3rd metal level 10 being set, the 3rd set metal level 10 specifically can be connected with the first metal layer 1 by the via hole of the first insulation course 3, and described the 3rd metal level 10 is connected with connecting electrode 5 by the via hole of the second insulation course 4.
The utility model the first embodiment alternately contact terminal of wiring arranges the 4th metal level 9 to the first insulation course 3 times, substrate 8 at the second contact terminal, that is: by the 4th metal level 9 that arranges with the second metal level 2 bed hedgehoppings, described the first insulation course 3 covers the upper surface of the 4th metal level 9.Described the 4th metal level 9 does not link to each other with the second metal level 2.The second metal level 2 links to each other with connecting electrode 5 by the via hole of the second insulation course 4.
The utility model the first embodiment is the contact terminal pair of wiring alternately, realize for the ease of technique, do not need to increase the difficulty of existing technique, the used material of the 4th metal level 9 of the first metal layer 1 of the first contact terminal and the second contact terminal is identical, can be by simultaneously deposition realization, so the thickness of the 4th metal level 9 is identical with the thickness of the first metal layer 1; The used material of the second metal level 2 of the 3rd metal level 10 of the first contact terminal and the second contact terminal is identical, can realize that the thickness of described the 3rd metal level 10 is identical with the thickness of the second metal level 2 by deposition simultaneously.Therefore, the thickness of the 3rd metal level 10 of the first contact terminal and the thickness sum of the first metal layer 1 equal the thickness sum of the second metal level 2 and the 4th metal level 9 of the second contact terminal, can guarantee contact terminal pair and good the contacting of IC pin.
The utility model the first embodiment is the contact terminal pair of wiring alternately, goes for the second metal level 2 any situation different from the thickness of the first metal layer 1.
The utility model the first embodiment is the contact terminal pair of wiring alternately, the adjacent contact terminal is identical to two kinds of metal materials in the double-layer metal structure that adopts, and the thickness of respective metal layers is identical, do not change because of the first insulation course 3 and the second insulation course 4 again, so being the connecting electrode 5 of the first contact terminal and the second contact terminal, the adjacent contact terminal has identical height, thereby make contact terminal pair good with contacting of IC pin, thereby the quality of liquid crystal panel is guaranteed.
The utility model embodiment alternately contact terminal of wiring only arranges the 3rd metal level 10 to also can be according to the concrete thickness relationship of the first metal layer 1 and the second metal level 3 above the first metal layer 1 of thickness the first contact terminal little with respect to the second metal level 2 of the second contact terminal; Perhaps, only below the second metal level 2 of thickness second contact terminal little with respect to the first metal layer 1 of the first contact terminal, the 4th metal level 9 is set.
As shown in Figure 5, this figure is the alternately right schematic cross-section of contact terminal of wiring of the utility model the second embodiment.
The utility model the second embodiment is the contact terminal pair of wiring alternately, is applicable to the thickness of the second metal level 2 of the second contact terminal greater than the situation of the thickness of the first metal layer 1 of the first contact terminal.
The contact terminal that the utility model the second embodiment alternately connects up is the difference of relative the first embodiment, only between the first insulation course 3 of the first contact terminal and the second insulation course 4, the 3rd metal level 10, the second contact terminals are set the 4th metal level is not set.
The utility model the second embodiment alternately the contact terminal of wiring to specifically between the first insulation course 3 of the first contact terminal and the second insulation course 4, the 3rd metal level 10 being set, the 3rd set metal level 10 specifically can be connected with the first metal layer 1 by the via hole of the first insulation course 3, and described the 3rd metal level 10 specifically can be connected with connecting electrode 5 by the via hole of the second insulation course 4.
In order to make the right connecting electrode 5 of the described contact terminal of the utility model the second embodiment have identical height, the first metal layer 1 of the first contact terminal and both thickness sums of the 3rd metal level 10 equal the thickness of the second metal level 2 of the second contact terminal, and described the 3rd metal level 10 can adopt same material with described the second metal level 2.
Because the required thickness of right the 3rd metal level 10 of the described contact terminal of the utility model the second embodiment and the second metal level 2 is different, the formation technique of described the 3rd metal level 10 specifically can be: after applying respective metal (metal material of the second metal level 2), by semi-transparent mask plate (Half Tone Mask, HTM) or gray level mask plate (Gray Tone Mask, GTM) etching forms the 3rd metal level 10 and described the second metal level 2 of different-thickness, via hole by the first insulation course 3 is connected with the first metal layer 1 again, do not need additionally to increase Mask (mask) processing step, realize simple.
The utility model the second embodiment only arranges the 3rd metal level 10 above the first metal layer 1 of the first contact terminal, and the described the first metal layer 1 of the first contact terminal and described both thickness sums of the 3rd metal level 10 equal the thickness of described second metal level 2 of the second contact terminal, therefore the connecting electrode 5 of the first contact terminal and the second contact terminal has identical height, make contact terminal pair good with contacting of IC pin, thereby the quality of liquid crystal panel is guaranteed.
As shown in Figure 6, this figure is the alternately right schematic cross-section of contact terminal of wiring of the utility model the 3rd embodiment.
The utility model the 3rd embodiment is the contact terminal pair of wiring alternately, is applicable to the thickness of the second metal level 2 of the second contact terminal less than the situation of the thickness of the first metal layer 1 of the first contact terminal.
The contact terminal that the utility model the 3rd embodiment alternately connects up is that to the difference of relative the first embodiment only the first insulation course 3 times, the substrate 8 at the second contact terminal arranges the 4th metal level 9.
The utility model the 3rd embodiment alternately the first contact terminal of the contact terminal of wiring can according to actual needs, not arrange the second insulation course 4.
The utility model the 3rd embodiment alternately the contact terminal of wiring to specifically above first insulation course 3 times of the second contact terminal of the second metal level 2 wirings, substrate 8, the 4th metal level 9 being set.The utility model the 3rd embodiment alternately the contact terminal of wiring to by the 4th metal level 9 that arranges the second metal level 2 bed hedgehoppings with the second contact terminal.Described the first insulation course 3 covers the upper surface of the 4th metal level 9, and described the 4th metal level 9 does not link to each other with the second metal level 2.
For the connecting electrode 5 that makes the first contact terminal and the second contact terminal has identical height, described second metal level 2 of the second contact terminal and described both thickness sums of the 4th metal level 9 equal the thickness of the described the first metal layer 1 of the first contact terminal, and described the 4th metal level 9 can adopt same material with described the first metal layer 1.
Because described the 4th metal level 9 is different from described the first metal layer 1 desired thickness, the formation technique of described the 4th metal level 9 specifically can be: after applying respective metal (metal material of the first metal layer 1), by semi-transparent mask plate (Half Tone Mask, HTM) or gray level mask plate (Gray Tone Mask, GTM) etching forms the 4th metal level 9 and the first metal layer 1 of different-thickness, do not need additionally to increase Mask (mask) processing step, realize simple.
The utility model the 3rd embodiment only arranges the 4th metal level 9 below the second metal level 2 of the second contact terminal, and described second metal level 2 of the second contact terminal and described both thickness sums of the 4th metal level 9 equal the thickness of the described the first metal layer 1 of the first contact terminal, therefore the connecting electrode of the first contact terminal and the second contact terminal has identical height, make contact terminal pair good with contacting of IC pin, thereby the quality of liquid crystal panel is guaranteed.
The 4th metal level 9 of the utility model embodiment the second contact terminal centering can be understood as the derby of one deck and the first metal layer 1 identical material of the first contact terminal, and the 3rd metal level 10 of the first contact terminal can be understood as the derby of one deck and the second metal level 2 identical materials of the second contact terminal.
The utility model above-described embodiment the second contact terminal to described in the first metal layer 1 of the first contact terminal be specifically as follows the Gate metal level, the first insulation course 3 comprises one deck gate insulator at least so, the second insulation course 4 is passivation layer, and the second metal level 2 is the SD metal level.
The utility model above-described embodiment the second contact terminal to described in the first metal layer 1 of the first contact terminal specifically also can be the SD metal level, the first insulation course 3 is passivation layer so, the second insulation course 4 comprises one deck gate insulator at least, and the second metal level 2 is the Gate metal level.
The below take the described contact terminal of the utility model the first embodiment to simply introduce the right realization flow of the utility model contact terminal as example.
The described contact terminal of the utility model the first embodiment pair, its preparation method can comprise the steps:
On substrate 8, form the first metal layer 1 (for example Gate metal level) of the first contact terminal and the 4th metal level 9 of the second contact terminal by process sequences such as deposition, photoetching and etchings;
On the first metal layer 1 (such as the Gate metal level) and the 4th metal level 9, form the first insulation course 3 (for example gate insulator) by techniques such as depositions again;
Upward form the 3rd metal level 10 of the first contact terminal and the second metal level 2 of the second contact terminal (for example SD metal level) by techniques such as deposition, photoetching and etchings at the first insulation course 3 (such as gate insulator) again;
Described the 3rd metal level 10 is connected with the first metal layer 1 (for example Gate metal level) by the via hole of the first insulation course 3 (for example gate insulator).
Described the 3rd metal level 10 of the first contact terminal that forms as shown in Figure 4 is positioned between described the first insulation course 3 (for example gate insulator) and described the second insulation course 4 (for example passivation layer); Described the 4th metal level 9 of the second contact terminal is arranged between described substrate 8 and described the first insulation course (for example gate insulator) 3.
Then, form the second insulation course (for example passivation layer) 4 and connecting electrode 5 by process sequences such as deposition, photoetching and etchings again, the 3rd metal level 10 that makes the first contact terminal is connected with connecting electrode 5 by the via hole of the second insulation course (for example passivation layer) 4, realizes that finally the first metal layer (for example Gate metal level) 1 is connected with connecting electrode 5.
The right preparation method of the above-mentioned described contact terminal of the utility model the first embodiment, what provide is the situation that directly forms the first metal layer on substrate 8.In order to meet the different needs, between the first metal layer 1 and the 4th metal level 9 and substrate 8, may also there be other retes, be not described in detail in this.
Need to prove, the described contact terminal of the utility model above-described embodiment is to being applicable to the liquid crystal panel of different size, the first contact terminal of contact terminal centering described in the utility model can be used as the contact terminal into controlling grid scan line or data-signal sweep trace, and the second contact terminal also can be the contact terminal of controlling grid scan line or data-signal sweep trace.
The structure of the contact terminal that exemplifies among the utility model embodiment is the structure in the lead-in wire zone of viewing area periphery, and each rete all forms at periphery simultaneously when carrying out the viewing area making.And the rete of viewing area order can have a variety of variations, as long as produce the element (such as grid, source electrode, drain electrode and pixel electrode etc.) of panel driving necessity, guarantees that the display panel driven gets final product.So the film layer structure of periphery also has a lot of variations accordingly, not necessarily just directly be produced on the substrate 8 such as the first metal layer 1 and the 4th metal level 9, might between the first metal layer 1 and the 4th metal level 9 and substrate 8, there be other retes.When the first metal layer 1 top did not arrange the 3rd metal level, the insulation course of the first metal layer 1 top also not necessarily must have two-layer, also might a more than layer insulating between the second metal level 2 and the 4th metal level 9.In the contact terminal structure of the utility model embodiment, as long as guarantee that each metal level is insulated from each other, but and have be connected to outside conductive component (such as the described connecting electrode 5 of the utility model embodiment) get final product.
The above only is preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the utility model know-why; can also make some improvement and replacement, these improvement and replacement also should be considered as protection domain of the present utility model.
Claims (14)
1. the contact terminal pair of wiring alternately is characterized in that described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the second insulation course on described the first insulation course, be positioned at the connecting electrode on described the second insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to comprising: the 3rd metal level and the 4th metal level; Described the 3rd metal level is between described first insulation course and described the second insulation course of described the first contact terminal, and described the 4th metal level is between the described substrate and described the first insulation course of described the second contact terminal; Described the 3rd metal level is connected with described the first metal layer by the via hole of described the first insulation course, and described the 3rd metal level is connected with described connecting electrode by the via hole of described the second insulation course;
The thickness sum of the thickness of described the 4th metal level and described the second metal level equals the thickness sum of thickness and described the 3rd metal level of described the first metal layer.
2. the contact terminal of alternately wiring according to claim 1 pair is characterized in that,
Described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
3. the contact terminal of alternately wiring according to claim 1 and 2 pair is characterized in that described the 3rd metal level adopts same material with described the second metal level, described the 4th metal level and described the first metal layer employing same material.
4. the contact terminal of alternately wiring according to claim 3 pair is characterized in that, described contact terminal is identical to the thickness of the thickness that comprises described the 4th metal level and described the first metal layer; The thickness of described the 3rd metal level is identical with the thickness of described the second metal level.
5. the contact terminal of alternately wiring according to claim 1 and 2 pair is characterized in that described the first contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.
6. the contact terminal pair of wiring alternately is characterized in that described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the second insulation course on described the first insulation course, be positioned at the connecting electrode on described the second insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to also comprising: the 3rd metal level, and described the 3rd metal level is between described first insulation course and described the second insulation course of described the first contact terminal; The thickness sum of the thickness of the described the first metal layer of described the first contact terminal and described the 3rd metal level equals the thickness of described second metal level of described the second contact terminal.
7. the contact terminal of alternately wiring according to claim 6 pair is characterized in that,
Described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
8. according to claim 6 or the contact terminals of 7 described alternately wirings pair, it is characterized in that described the 3rd metal level and described the second metal level employing same material.
9. according to claim 6 or the contact terminals of 7 described alternately wirings pair, it is characterized in that described the first contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.
10. the contact terminal pair of wiring alternately is characterized in that described contact terminal is to comprising the first adjacent contact terminal and the second contact terminal; Described the first contact terminal comprises substrate, be positioned at described substrate top the first metal layer, be positioned at the first insulation course on the described the first metal layer, be positioned at the connecting electrode on described the first insulation course; Described the second contact terminal comprises described substrate, be positioned at described substrate top described the first insulation course, be positioned at the second metal level on described the first insulation course, be positioned at the second insulation course on described the second metal level and be positioned at described connecting electrode on described the second insulation course;
Described contact terminal is to also comprising: the 4th metal level; Described the 4th metal level is between the described substrate and described the first insulation course of described the second contact terminal; The thickness sum of the thickness of described the 4th metal level and described the second metal level equals the thickness of described the first metal layer.
11. the contact terminal of alternately wiring according to claim 10 pair is characterized in that,
Described the first metal layer is the Gate metal level, and described the first insulation course comprises gate insulator at least, and described the second insulation course is passivation layer, and described the second metal level is the SD metal level;
Or described the first metal layer is the SD metal level, and described the first insulation course is passivation layer, and described the second insulation course comprises gate insulator at least, and described the second metal level is the Gate metal level.
12. according to claim 10 or the contact terminals of 11 described alternately wirings pair, it is characterized in that described the 4th metal level and described the first metal layer employing same material.
13. the contact terminal of alternately wiring according to claim 12 pair is characterized in that, further comprises the second insulation course between the connecting electrode of described the first contact terminal and described the first insulation course.
14. according to claim 10 or the contact terminals of 11 described alternately wirings pair, it is characterized in that described the first contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace; Described the second contact terminal is the contact terminal of controlling grid scan line or data-signal sweep trace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220389387 CN202794782U (en) | 2012-08-07 | 2012-08-07 | Alternately wiring contact terminal pair |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220389387 CN202794782U (en) | 2012-08-07 | 2012-08-07 | Alternately wiring contact terminal pair |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202794782U true CN202794782U (en) | 2013-03-13 |
Family
ID=47822017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220389387 Expired - Lifetime CN202794782U (en) | 2012-08-07 | 2012-08-07 | Alternately wiring contact terminal pair |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202794782U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855130A (en) * | 2014-02-21 | 2014-06-11 | 合肥鑫晟光电科技有限公司 | Array substrate, manufacturing method of array substrate and display device |
| CN107422550A (en) * | 2017-07-24 | 2017-12-01 | 武汉华星光电技术有限公司 | Pin and its manufacture method, display panel |
| WO2020093455A1 (en) * | 2018-11-06 | 2020-05-14 | 惠科股份有限公司 | Display panel and display device |
| WO2020177500A1 (en) * | 2019-03-01 | 2020-09-10 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, and display panel |
| CN113835271A (en) * | 2021-09-22 | 2021-12-24 | Tcl华星光电技术有限公司 | Display panel and electronic display device |
-
2012
- 2012-08-07 CN CN 201220389387 patent/CN202794782U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855130A (en) * | 2014-02-21 | 2014-06-11 | 合肥鑫晟光电科技有限公司 | Array substrate, manufacturing method of array substrate and display device |
| CN107422550A (en) * | 2017-07-24 | 2017-12-01 | 武汉华星光电技术有限公司 | Pin and its manufacture method, display panel |
| CN107422550B (en) * | 2017-07-24 | 2020-05-01 | 武汉华星光电技术有限公司 | Pin, manufacturing method thereof and display panel |
| WO2020093455A1 (en) * | 2018-11-06 | 2020-05-14 | 惠科股份有限公司 | Display panel and display device |
| US11387262B2 (en) | 2018-11-06 | 2022-07-12 | HKC Corporation Limited | Display panel and display device |
| WO2020177500A1 (en) * | 2019-03-01 | 2020-09-10 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, and display panel |
| US11894390B2 (en) | 2019-03-01 | 2024-02-06 | Chongqing Boe Optoelectronics Technology Co., Ltd. | Display substrate and manufacturing method thereof, display panel |
| CN113835271A (en) * | 2021-09-22 | 2021-12-24 | Tcl华星光电技术有限公司 | Display panel and electronic display device |
| CN113835271B (en) * | 2021-09-22 | 2022-10-04 | Tcl华星光电技术有限公司 | Display panel and electronic display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103293811B (en) | A kind of array base palte and preparation method thereof, display unit | |
| US9835884B2 (en) | Array substrate and method for manufacturing the same, a display panel and method for testing the same, and a display apparatus | |
| CN103728804B (en) | A kind of motherboard, array base palte and preparation method, display device | |
| CN202794782U (en) | Alternately wiring contact terminal pair | |
| CN104699321A (en) | Touch display substrate and touch display device | |
| CN102708771B (en) | Array substrate, manufacturing method and display unit thereof | |
| CN105093729B (en) | Array base palte and preparation method thereof, display device | |
| CN204595382U (en) | Array base palte and display panels and device and repaired array base palte | |
| CN103728802B (en) | Liquid crystal panel | |
| CN104571758A (en) | Array base plate and display panel | |
| CN106449652B (en) | Array substrate and its manufacturing method, display panel and display equipment | |
| CN108711565B (en) | Display substrate, manufacturing method thereof and display panel | |
| US10371997B2 (en) | Array substrate, method of manufacturing the same, and display device | |
| CN105204252A (en) | Thin film transistor array substrate and liquid crystal display panel | |
| CN103186287A (en) | Touch display screen and touch display device | |
| CN103680317B (en) | A kind of array base palte and manufacture method thereof and display device | |
| CN107123384B (en) | Test method of display substrate and substrate applied to display equipment | |
| CN105607369A (en) | Array substrate, liquid crystal display panel and display device | |
| CN102945846A (en) | Array substrate, manufacturing method thereof and display device | |
| CN103293748B (en) | With CF substrate and the touch panel of touch function | |
| CN203217211U (en) | Display panel and display device | |
| CN103439844A (en) | Array substrate, display device and method for manufacturing array substrate | |
| CN103995635A (en) | Array substrate, manufacturing method of array substrate and touch display device | |
| CN104749846B (en) | A kind of array base palte and preparation method thereof, display panel | |
| CN101639595A (en) | LCD array substrate with self-repairing disconnection function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150702 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150702 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150702 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing city in Western Daxing District economic and Technological Development Zone, Road No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130313 |