CN103855130A - Array substrate, manufacturing method of array substrate and display device - Google Patents
Array substrate, manufacturing method of array substrate and display device Download PDFInfo
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- CN103855130A CN103855130A CN201410059580.1A CN201410059580A CN103855130A CN 103855130 A CN103855130 A CN 103855130A CN 201410059580 A CN201410059580 A CN 201410059580A CN 103855130 A CN103855130 A CN 103855130A
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Abstract
An embodiment of the invention provides an array substrate, a manufacturing method of the array substrate and a display device, and relates to the technical field of display. The etching thicknesses of through holes are reduced, and meanwhile data lines are connected with a first detection line made of a grid electrode metal film. The array substrate comprises grid lines and the data lines, wherein the grid lines and the data lines cross transversely and longitudinally. The data lines are connected with the first detection line, and the first detection line and the grid lines are arranged on the same layer. The array substrate further comprises connection portions, wherein one end of each connection portion is electrically connected with the first detection line, the other end of each connection portion is electrically connected with the corresponding data line, so that the data lines receive detection signals through the connection portions, and the detection signals are input by the first detection line.
Description
Technical field
The present invention relates to Display Technique field, relate in particular to a kind of array base palte and preparation method thereof, display unit.
Background technology
Along with the develop rapidly of Display Technique, TFT-LCD(Thin Film Transistor Liquid Crystal Display, Thin Film Transistor-LCD) as a kind of panel display apparatus, because it has the features such as little, low in energy consumption, the radiationless and cost of manufacture of volume is relatively low, become just gradually the demonstration product of main flow.
Multiple dot structures that TFT-LCD of the prior art is arranged by matrix form conventionally form, its typical structure as shown in Figure 1, the grid line 10 and the data wire 11 that comprise transverse and longitudinal intersection are divided the multiple pixel cells 12 that form, and are provided with thin-film transistor (TFT) at grid line 10 with the crossover location place of data wire 11.Wherein, for the on off operating mode of each data wire 11 on pair array substrate detects, can mutual connect respectively the first detection line 20 and the second detection line 21 every data wire 11 by two.Wherein the first detection line 20 adopts the gate metal that forms grid 10 to make; And the second detection line 21 adopts the data metal of composition data line 11 to make.
In prior art, (along the cutaway view that in Fig. 1, dotted line A-A ' obtains) as shown in Figure 2, needs to make connection via hole 30 data wire 11 is connected with the first detection line 20.But making in the process that connects via hole 30, need to adopt dry etch process, the gate insulator 13, etching protective layer 14 and the passivation layer 15 that the correspondence on grid line 10 surfaces are connected to via hole 30 positions etch away.The thickness of the rete being etched due to above-mentioned needs is larger; therefore can strengthen the difficulty of etching; and because the material of each rete of formation is different; therefore at the same time in the process of etching grid insulating barrier 13, etching protective layer 14 and passivation layer 15, easily on the hole wall of the connection via hole 30 forming, there is wedge angle 301.So, in the time that data wire 11 is connected with grid line 10 by connecting via hole 30; The wedge angle 301 that connects the hole wall of via hole 30 causes data wire 11 to rupture, thus because completing the connection of grid line 10 and data wire 11, and cause testing process failure, affect the quality and performance of product.
Summary of the invention
Embodiments of the invention provide a kind of array base palte and preparation method thereof, display unit, in reducing via etch thickness, data wire are connected with the first detection line of being made up of gate metal film.
For achieving the above object, embodiments of the invention adopt following technical scheme:
The one side of the embodiment of the present invention, provides a kind of array base palte, comprises grid line and data wire that transverse and longitudinal is intersected, and described data wire connects the first detection line; Described the first detection line and described grid line arrange with layer; Also comprise:
Connecting portion, one end of described connecting portion is electrically connected with described the first detection line; The other end is electrically connected with described data wire, to make described data wire receive the detection signal of described the first detection line input by described connecting portion.
The embodiment of the present invention on the other hand, provides a kind of display unit, comprises any one array base palte as above.
The another aspect of the embodiment of the present invention, provides a kind of manufacture method of array base palte, comprises the method for grid line that transverse and longitudinal intersects and data wire of making, the method for the first detection line that making is connected with described data wire; Wherein, described the first detection line and described grid line arrange with layer; Described method also comprises:
Form the pattern of connecting portion on transparency carrier surface by composition technique;
One end of described connecting portion is electrically connected with described the first detection line; The other end is electrically connected with described data wire, to make described data wire receive the detection signal of described the first detection line input by described connecting portion.
The embodiment of the present invention provides a kind of array base palte and preparation method thereof, display unit, and this array base palte comprises grid line and the data wire that transverse and longitudinal is intersected.Data wire connects the first detection line, and wherein this first detection line and above-mentioned grid line arrange with layer, and this array base palte also comprises connecting portion, and one end of described connecting portion is electrically connected with the first detection line; The other end is electrically connected with data wire, receives the detection signal that the first detection line is inputted so that obtain data wire by connecting portion.So, the first detection line of being made up of gate metal can be connected with data wire by connecting portion, while having avoided the first detection line to be directly connected with data wire, owing to making the blocked up phenomenon that causes data wire fracture of via hole difficulty thickness large or etching via hole, thereby promote the quality of product.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of a kind of array base palte that Fig. 1 provides for prior art;
The structural representation of via hole on a kind of array base palte that Fig. 2 provides for prior art;
The structural representation of a kind of array base palte that Fig. 3 provides for the embodiment of the present invention;
The structural representation of the another kind of array base palte that Fig. 4 provides for the embodiment of the present invention;
The structural representation of another array base palte that Fig. 5 provides for the embodiment of the present invention;
The manufacture method flow chart of a kind of array base palte that Fig. 6 provides for the embodiment of the present invention;
The manufacture method flow chart of the another kind of array base palte that Fig. 7 provides for the embodiment of the present invention;
The manufacture method flow chart of another array base palte that Fig. 8 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of array base palte, as shown in Figure 3, comprises grid line 10 and data wire 11 that transverse and longitudinal is intersected, and data wire 11 connects the first detection line 20.Wherein, the first detection line 20 arranges with layer with grid line 10.This array base palte can also comprise:
Connecting portion 100, one end of this connecting portion 100 is electrically connected with the first detection line 20; The other end is electrically connected with data wire 11, receives the detection signal that the first detection line 20 is inputted so that obtain data wire 11 by connecting portion 100.
It should be noted that, the detection signal that above-mentioned the first detection line 20 is inputted can be for detection of the on off operating mode of data wire 11, the process that belongs to pair array substrate and carry out quality inspection.
It should be noted that, the first detection line 20 arranges and can refer to that the first detection line 20 and grid line 10 are positioned at same layer employing and make with material with layer with grid line 10, for example, all adopts the gate metal of making grid line 10.Wherein, the first detection line 20 can form by a composition technique with grid line 10 simultaneously.
It should be noted that, in the present invention, composition technique, can refer to comprise photoetching process, or, comprise photoetching process and etch step, can also comprise printing, ink-jet etc. other are used to form the technique of predetermined pattern simultaneously; Photoetching process, refers to that utilize photoresist, mask plate, the exposure machine etc. of technical processs such as comprising film forming, exposure, development form the technique of figure.The corresponding composition technique of structure choice forming in can be according to the present invention.
The embodiment of the present invention provides a kind of array base palte, comprises grid line and data wire that transverse and longitudinal is intersected.Data wire connects the first detection line, and wherein this first detection line and above-mentioned grid line arrange with layer, and this array base palte also comprises connecting portion, and one end of described connecting portion is electrically connected with the first detection line; The other end is electrically connected with data wire, receives the detection signal that the first detection line is inputted so that obtain data wire by connecting portion.So, the first detection line of being made up of gate metal can be connected with data wire by connecting portion, while having avoided the first detection line to be directly connected with data wire, owing to making the blocked up phenomenon that causes data wire fracture of via hole difficulty thickness large or etching via hole, thereby promote the quality of product.
Further, (cutaway view obtaining along dotted line B-B ' in Fig. 3) as shown in Figure 4, connecting portion 100 comprises the signal transport layer 101 for transmitting above-mentioned detection signal.Wherein, this signal transport layer 101 arranges with layer with data wire 11.
It should be noted that, signal transport layer 101 arranges and can refer to that signal transport layer 101 and data wire 11 are positioned at same layer employing and make with material with layer with data wire 11, for example, all adopts the data metal of making data wire 11.Wherein, signal transport layer 101 can form by a composition technique with data wire 11 simultaneously.So, in forming data wire 11, can form signal transport layer 101, thereby can save the step of independent making signal transport layer 101, simplify production technology, improve production efficiency.
Further, as shown in Figure 5, data wire 11 comprises spaced the first data wire 111 and the second data wire 112.
The first data wire 111 is connected with the first detection line 20 by connecting portion 101.
The second data wire 112 is connected with the second detection line 21, and wherein, the second detection line 21 arranges with layer with data wire 11.It should be noted that, the second detection line 21 arranges and can refer to that the second detection line 21 and data wire 11 are positioned at same layer employing and make with material with layer with data wire 11, for example, all adopts the data metal of making data wire 11.Wherein, the second detection line 21 can form by a composition technique with data wire 11 simultaneously.So, comprise the first data wire 111 and the second data wire 112 making data wire 11() in just can complete the making of the second detection line 21, thereby can simplify manufacture craft, enhance productivity.
It can be in the manufacturing process of array base palte that the second concrete data wire 112 is connected with the second detection line 21, the second data wire 112 and the second detection line 21 can be formed by a composition technique as integrative-structure.So, can simplify manufacture craft, enhance productivity.The articulamentum of conduction can also be set between the second data wire 112 and the second detection line 21, so that the second data wire 112 is electrically connected with the second detection line 21.
It should be noted that, if the first data wire 111 opens circuit, the second data wire 112 does not open circuit.In the time that the first data wire 111 and the second data wire 112 are connected a detection data wire simultaneously, may be sent to the second data wire 112 for detection of the detection signal of the first data wire 111, because the second data wire 112 does not open circuit, therefore can cause the breaking phenomena of the first data wire 111 be not detected and occur undetected.By above-mentioned connected mode, be connected respectively the first detection line 20 and the second detection line 21 by the first data wire 111 and second data wire 112 of space.In the time detecting data wire on off operating mode, can avoid the wherein detection as the on off operating mode of the second data wire 112 to another the first data wire 111 of above-mentioned two adjacent data wires to impact.
Further, as shown in Figure 4, connecting portion 100 once comprises on the light direction of array base palte:
Detection line articulamentum 102, gate insulator 13, etching protective layer 14, signal transport layer 101, passivation layer 15 and electric connection layer 16.
Wherein, detection line articulamentum 102 is connected with the first detection line 20, and arranges with layer with the first detection line 20.It should be noted that, detection line articulamentum 102 and the first detection line 20 arrange and can refer to that detection line articulamentum 102 and the first detection line 20 are positioned at same layer employing and make with material with layer, for example, all adopt the gate metal of making grid line 10.Wherein, detection line articulamentum 102 and the first detection line 20 can form by a composition technique simultaneously.So, in making grid line 10, just can complete the making of detection line articulamentum 102 and the first detection line 20, thereby can simplify manufacture craft, enhance productivity.
Detection line articulamentum 102 is electrically connected with signal transport layer 101 by the first via hole 31.Wherein, while making the first via hole 31, only need to etching protective layer 14 and gate insulator 13 be etched away in the position of the corresponding detection line articulamentum 102 in the surface of etching protective layer 14; so; can reduce the thickness that etching forms via hole; lower the difficulty that etching technics forms via hole, and can avoid via hole inwall to occur wedge angle.
Connecting portion 100 can be connected with the first detection line 20 by said method.In addition this connecting portion 100 also comprises:
The second via hole 32, this second via hole 32 runs through passivation layer 15, is electrically connected by the second via hole 32 with the one end that makes electric connection layer 16 with signal transport layer 101.
This array base palte also comprises further: the 3rd via hole 33, the three via holes 33 run through passivation layer 15, is electrically connected by the 3rd via hole 33 with the other end that makes electric connection layer 16 with the first data wire 111.
So,, by above-mentioned the second via hole 32 and the 3rd via hole 33, connecting portion 100 can be electrically connected with the first data wire 111.During due to making the second via hole 32 and the 3rd via hole 33, only need to etch away one deck passivation layer, therefore etching technics is simple easily controls, and avoids via hole inwall to occur wedge angle.
In sum, because the first detection line 20 adopts gate metal to make, therefore in the above embodiment of the present invention in the process that the first detection line 20 is connected with the first data wire 111, adopted connecting portion 100 that the first detection line 20 is connected with the first data wire 111.Concrete, the first detection line 20 is connected with the signal transport layer 101 in connecting portion 100 by the first via hole 31; And the first data wire 111 is connected with the signal transport layer 101 of connecting portion 100 by the second via hole 32 that is arranged in the 3rd via hole 33 on its surface and be arranged on connecting portion 100.Make because signal transport layer 101 can adopt data metal, therefore can itself and data wire 11(be comprised to the first data wire 111 and the second data wire 112 by a composition technique) and the second detection line 21 form simultaneously, thereby can simplify manufacture craft.And; in the time making for the first via hole 31 that connecting portion 100 is connected with the first detection line 20 and the first data wire 111 respectively, the second via hole 32 and the 3rd via hole 33; the thickness of etched film layer reduces to some extent; for example form 31 needs etching grid insulating barriers 13 of the first via hole and etching protective layer 14, and only need etching passivation layer 16 while forming the second via hole 32, the 3rd via hole 33.So, can reduce etching and form the technology difficulty of via hole, and avoid owing to occurring on the via hole hole wall forming that the phenomenon that wedge angle made the thin layer of hole surface that fracture occur produces, thereby improve the quality and performance of product.
Further, the material of above-mentioned electric connection layer 16 is transparent conductive material.For example, ITO(Indium tin oxide, tin indium oxide).
The embodiment of the present invention provides a kind of display unit, comprise any one array base palte as above, the identical beneficial effect of array base palte providing with previous embodiment of the present invention is provided, because array base palte has been described in detail in the aforementioned embodiment, repeats no more herein.
In embodiments of the present invention, display unit specifically can comprise liquid crystal indicator, and for example this display unit can be any product or parts with Presentation Function such as liquid crystal display, LCD TV, DPF, mobile phone or panel computer.
The embodiment of the present invention provides a kind of display unit, comprises array base palte, and this array base palte comprises grid line and the data wire that transverse and longitudinal is intersected.Data wire connects the first detection line, and wherein this first detection line and above-mentioned grid line arrange with layer, and this array base palte also comprises connecting portion, and one end of described connecting portion is electrically connected with the first detection line; The other end is electrically connected with data wire, receives the detection signal that the first detection line is inputted so that obtain data wire by connecting portion.So, the first detection line of being made up of gate metal can be connected with data wire by connecting portion, while having avoided the first detection line to be directly connected with data wire, owing to making the blocked up phenomenon that causes data wire fracture of via hole difficulty thickness large or etching via hole, thereby promote the quality of product.
The embodiment of the present invention provides a kind of manufacture method of array base palte, comprises the method for making grid line 10 that transverse and longitudinal intersects and the method for data wire 11, the first detection line 20 that making is connected with data wire 11.Wherein, the first detection line 20 arranges with layer with grid line 10.As shown in Figure 6, the manufacture method of above-mentioned array base palte can also comprise:
S101, form the pattern of connecting portion 100 on transparency carrier 01 surface by composition technique.
S102, one end of connecting portion 100 is electrically connected with the first detection line 20; The other end is electrically connected with data wire 11, receives the detection signal that the first detection line 20 is inputted so that obtain data wire 11 by connecting portion 100.
It should be noted that, the detection signal that above-mentioned the first detection line 20 is inputted can be for detection of the on off operating mode of data wire 11, the process that belongs to pair array substrate and carry out quality inspection.
It should be noted that, the first detection line 20 arranges and can refer to that the first detection line 20 and grid line 10 are positioned at same layer employing and make with material with layer with grid line 10, for example, all adopts the gate metal of making grid line 10.Wherein, the first detection line 20 can form by a composition technique with grid line 10 simultaneously.
The embodiment of the present invention provides a kind of manufacture method of array base palte, comprises the method for making grid line that transverse and longitudinal intersects and the method for data wire, the first detection line that making is connected with data wire.Wherein, the first detection line and above-mentioned grid line arrange with layer, and the manufacture method of this array base palte also comprises the pattern that forms connecting portion by composition technique on transparency carrier surface; One end of connecting portion is electrically connected with the first detection line; The other end is electrically connected with data wire, receives the detection signal that the first detection line is inputted so that obtain data wire by connecting portion.So, the first detection line of being made up of gate metal can be connected with data wire by connecting portion, while having avoided the first detection line to be directly connected with data wire, owing to making the blocked up phenomenon that causes data wire fracture of via hole difficulty thickness large or etching via hole, thereby promote the quality of product.
Further, said method also comprises:
In connecting portion 101, be provided for transmitting the signal transport layer 101 of above-mentioned detection signal.This signal transport layer 101 arranges with layer with data wire 11.
It should be noted that, signal transport layer 101 arranges and can refer to that signal transport layer 101 and data wire 11 are positioned at same layer employing and make with material with layer with data wire 11, for example, all adopts the data metal of making data wire 11.Wherein, signal transport layer 101 can form by a composition technique with data wire 11 simultaneously.So, in forming data wire 11, can form signal transport layer 101, thereby can save the step of independent making signal transport layer 101, simplify production technology, improve production efficiency.
Further, in the time that data wire 11 comprises spaced the first data wire 111 and the second data wire 112, as shown in Figure 7, the manufacture method of above-mentioned array base palte can also comprise:
S201, the first data wire 11 is connected with the first detection line 20 by connecting portion 101.
S202, second detection line 21 arranging with layer at the making of the surface of transparency carrier 01 and data wire 11.
S203, the second data wire 112 is connected with the second detection line 21.
It should be noted that, the second detection line 21 arranges and can refer to that the second detection line 21 and data wire 11 are positioned at same layer employing and make with material with layer with data wire 11, for example, all adopts the data metal of making data wire 11.Wherein, the second detection line 21 can form by a composition technique with data wire 11 simultaneously.So, comprise the first data wire 111 and the second data wire 112 making data wire 11() in just can complete the making of the second detection line 21, thereby can simplify manufacture craft, enhance productivity.
Concrete above-mentioned steps S201 can be, in the manufacturing process of array base palte, the second data wire 112 and the second detection line 21 can be formed by a composition technique as integrative-structure.So, can simplify manufacture craft, enhance productivity.The articulamentum of conduction can also be set between the second data wire 112 and the second detection line 21, so that the second data wire 112 is electrically connected with the second detection line 21.
It should be noted that, if the first data wire 111 opens circuit, the second data wire 112 does not open circuit.In the time that the first data wire 111 and the second data wire 112 are connected a detection data wire simultaneously, may be sent to the second data wire 112 for detection of the detection signal of the first data wire 111, because the second data wire 112 does not open circuit, therefore can cause the breaking phenomena of the first data wire 111 be not detected and occur undetected.By above-mentioned connected mode, be connected respectively the first detection line 20 and the second detection line 21 by the first data wire 111 and second data wire 112 of space.In the time detecting data wire on off operating mode, can avoid the wherein detection as the on off operating mode of the second data wire 112 to another the first data wire 111 of above-mentioned two adjacent data wires to impact.
Further, make the method for above-mentioned connecting portion 100, as shown in Figure 8, can also comprise:
S301, as shown in Figure 4, by composition technique, forms the pattern of detection line articulamentum 102 on transparency carrier 01 surface, and wherein, detection line articulamentum 102 is connected with the first detection line 20, and with the first detection line 20 with layer setting.
It should be noted that, detection line articulamentum 102 and the first detection line 20 arrange and can refer to that detection line articulamentum 102 and the first detection line 20 are positioned at same layer employing and make with material with layer, for example, all adopt the gate metal of making grid line 10.Wherein, detection line articulamentum 102 and the first detection line 20 can form by a composition technique simultaneously.So, in making grid line 10, just can complete the making of detection line articulamentum 102 and the first detection line 20, thereby can simplify manufacture craft, enhance productivity.
S302, at the substrate surface that is formed with detection line articulamentum 102 patterns by composition technique, form successively the pattern of gate insulator 13, etching protective layer 14.
S303, be formed with the substrate surface of said structure, the position of corresponding detection line articulamentum 102 forms the first via hole 31 by etching technics.
S304, be formed with the substrate surface of said structure, forming the pattern 101 of signal transport layer by composition technique, this signal transport layer 101 is electrically connected with detection line articulamentum 102 by the first via hole 31.
S305, be formed with the substrate surface of said structure, forming successively passivation layer 15 and electric connection layer 16 by composition technique.
Wherein, in the time making the first via hole 31, only need to etching protective layer 14 and gate insulator 13 be etched away in the position of the corresponding detection line articulamentum 102 in the surface of etching protective layer 14; so; can reduce the thickness that etching forms via hole; lower the difficulty that etching technics forms via hole, and can avoid via hole inwall to occur wedge angle.
Connecting portion 100 can be connected with the first detection line 20 by said method.Further, form the pattern of electric connection layer 16 in above-mentioned steps S305 before, the method for making connecting portion 100 can also comprise:
At the substrate surface that is formed with passivation layer 15, form the second via hole 32 by composition technique, this second via hole 32 runs through above-mentioned passivation layer 15, is electrically connected by the second via hole 32 with the one end that makes electric connection layer 16 with signal transport layer 101.
Further, form the pattern of electric connection layer 16 in above-mentioned steps S305 before, the manufacture method of above-mentioned array base palte can also comprise:
At the substrate surface that is formed with passivation layer 15, form the 3rd via hole 33, the three via holes 33 by composition technique and run through above-mentioned passivation layer 15, be electrically connected with the first data wire 111 by the 3rd via hole 33 with the other end that makes electric connection layer 16.
So,, by above-mentioned the second via hole 32 and the 3rd via hole 33, connecting portion 100 can be electrically connected with the first data wire 111.During due to making the second via hole 32 and the 3rd via hole 33, only need to etch away one deck passivation layer, therefore etching technics is simple easily controls, and avoids via hole inwall to occur wedge angle.
In sum, because the first detection line 20 adopts gate metal to make, therefore in the above embodiment of the present invention in the process that the first detection line 20 is connected with the first data wire 111, adopted connecting portion 100 that the first detection line 20 is connected with the first data wire 111.Concrete, the first detection line 20 is connected with the signal transport layer 101 in connecting portion 100 by the first via hole 31; And the first data wire 111 is connected with the signal transport layer 101 of connecting portion 100 by the second via hole 32 that is arranged in the 3rd via hole 33 on its surface and be arranged on connecting portion 100.Make because signal transport layer 101 can adopt data metal, therefore can itself and data wire 11(be comprised to the first data wire 111 and the second data wire 112 by a composition technique) and the second detection line 21 form simultaneously, thereby can simplify manufacture craft.And; in the time making for the first via hole 31 that connecting portion 100 is connected with the first detection line 20 and the first data wire 111 respectively, the second via hole 32 and the 3rd via hole 33; the thickness of etched film layer reduces to some extent; for example form 31 needs etching grid insulating barriers 13 of the first via hole and etching protective layer 14, and only need etching passivation layer 16 while forming the second via hole 32, the 3rd via hole 33.So, can reduce etching and form the technology difficulty of via hole, and avoid owing to occurring on the via hole hole wall forming that the phenomenon that wedge angle made the thin layer of hole surface that fracture occur produces, thereby improve the quality and performance of product.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art the present invention disclose technical scope in; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (14)
1. an array base palte, comprises grid line and data wire that transverse and longitudinal is intersected, and described data wire connects the first detection line; Described the first detection line and described grid line arrange with layer; It is characterized in that, also comprise:
Connecting portion, one end of described connecting portion is electrically connected with described the first detection line; The other end is electrically connected with described data wire, to make described data wire receive the detection signal of described the first detection line input by described connecting portion.
2. array base palte according to claim 1, is characterized in that, described connecting portion comprises the signal transport layer for transmitting described detection signal; Wherein, described signal transport layer and described data wire arrange with layer.
3. array base palte according to claim 2, is characterized in that,
Described data wire comprises spaced the first data wire and the second data wire;
Described the first data wire is connected with described the first detection line by described connecting portion;
Described the second data wire is connected with described the second detection line, and wherein, described the second detection line and described data wire arrange with layer.
4. according to the array base palte described in claim 2 or 3, it is characterized in that, described connecting portion once comprises on the light direction of described array base palte:
Detection line articulamentum, gate insulator, etching protective layer, described signal transport layer, passivation layer and electric connection layer;
Wherein, described detection line articulamentum is connected with described the first detection line, and arranges with layer with described the first detection line;
Described detection line articulamentum is electrically connected with described signal transport layer by the first via hole.
5. array base palte according to claim 4, is characterized in that, described connecting portion also comprises:
The second via hole, described the second via hole runs through described passivation layer, is electrically connected by described the second via hole with the one end that makes described electric connection layer with described signal transport layer.
6. array base palte according to claim 5, is characterized in that, also comprises:
The 3rd via hole, described the 3rd via hole runs through described passivation layer, is electrically connected by described the 3rd via hole with the other end that makes described electric connection layer with described the first data wire.
7. according to the array base palte described in claim 5 or 6, it is characterized in that, the material of making described electric connection layer is transparent conductive material.
8. a display unit, is characterized in that, comprises this row substrate as described in claim 1-7 any one.
9. a manufacture method for array base palte, comprises the method for making grid line that transverse and longitudinal intersects and the method for data wire, the first detection line that making is connected with described data wire; Described the first detection line and described grid line arrange with layer; It is characterized in that, described method also comprises:
Form the pattern of connecting portion on transparency carrier surface by composition technique;
One end of described connecting portion is electrically connected with described the first detection line; The other end is electrically connected with described data wire, to make described data wire receive the detection signal of described the first detection line input by described connecting portion.
10. the manufacture method of array base palte according to claim 9, is characterized in that, the method for making described connecting portion comprises:
In described connecting portion, be provided for transmitting the signal transport layer of described detection signal; Described signal transport layer and described data wire arrange with layer.
The manufacture method of 11. array base paltes according to claim 10, is characterized in that, in the time that described data wire comprises spaced the first data wire and the second data wire, described method also comprises:
Described the first data wire is connected with described the first detection line by described connecting portion;
Surface at above-mentioned transparency carrier makes the second detection line arranging with layer with described data wire;
Described the second data wire is connected with described the second detection line.
12. according to the manufacture method of the array base palte described in claim 10 or 11, it is characterized in that, the method for making described connecting portion also comprises:
By composition technique, form the pattern of detection line articulamentum on described transparency carrier surface, wherein, described detection line articulamentum is connected with described the first detection line, and arranges with layer with described the first detection line;
By composition technique, form successively the pattern of gate insulator, etching protective layer at the substrate surface that is formed with described detection line articulamentum pattern;
Be formed with the substrate surface of said structure, the position of corresponding described detection line articulamentum forms the first via hole by etching technics;
Be formed with the substrate surface of said structure, forming the pattern of described signal transport layer by composition technique, described signal transport layer is electrically connected with described detection line articulamentum by described the first via hole;
Being formed with the substrate surface of said structure, form successively passivation layer and electric connection layer by composition technique.
The manufacture method of 13. array base paltes according to claim 12, is characterized in that, before forming the pattern of described electric connection layer, the method for making described connecting portion also comprises:
Being formed with the substrate surface of described passivation layer, form the second via hole by composition technique, described the second via hole runs through described passivation layer, is electrically connected by described the second via hole with the one end that makes described electric connection layer with described signal transport layer.
The manufacture method of 14. array base paltes according to claim 13, is characterized in that, before forming the pattern of described electric connection layer, the manufacture method of described array base palte also comprises:
Be formed with the substrate surface of described passivation layer, forming the 3rd via hole by composition technique, described the 3rd via hole runs through described passivation layer, is electrically connected by described the 3rd via hole with the other end that makes described electric connection layer with described the first data wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410059580.1A CN103855130A (en) | 2014-02-21 | 2014-02-21 | Array substrate, manufacturing method of array substrate and display device |
Applications Claiming Priority (1)
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| CN201410059580.1A CN103855130A (en) | 2014-02-21 | 2014-02-21 | Array substrate, manufacturing method of array substrate and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810137A (en) * | 2016-05-31 | 2016-07-27 | 京东方科技集团股份有限公司 | Array substrate and detection method thereof |
| CN113380166A (en) * | 2021-06-15 | 2021-09-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202794782U (en) * | 2012-08-07 | 2013-03-13 | 北京京东方光电科技有限公司 | Alternately wiring contact terminal pair |
| CN103513454A (en) * | 2013-08-29 | 2014-01-15 | 京东方科技集团股份有限公司 | Array substrate and detecting method and manufacturing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202794782U (en) * | 2012-08-07 | 2013-03-13 | 北京京东方光电科技有限公司 | Alternately wiring contact terminal pair |
| CN103513454A (en) * | 2013-08-29 | 2014-01-15 | 京东方科技集团股份有限公司 | Array substrate and detecting method and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810137A (en) * | 2016-05-31 | 2016-07-27 | 京东方科技集团股份有限公司 | Array substrate and detection method thereof |
| CN105810137B (en) * | 2016-05-31 | 2019-01-04 | 京东方科技集团股份有限公司 | Array substrate and its detection method |
| CN113380166A (en) * | 2021-06-15 | 2021-09-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
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