CN202758892U - Trench MOSFET transistor having groove source electrode field plate - Google Patents
Trench MOSFET transistor having groove source electrode field plate Download PDFInfo
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- CN202758892U CN202758892U CN 201220433435 CN201220433435U CN202758892U CN 202758892 U CN202758892 U CN 202758892U CN 201220433435 CN201220433435 CN 201220433435 CN 201220433435 U CN201220433435 U CN 201220433435U CN 202758892 U CN202758892 U CN 202758892U
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Abstract
Disclosed is a trench MOSFET transistor having a groove source electrode field plate. The trench MOSFET transistor comprises a drain electrode (213), a substrate (200), a drift region (201), and a source electrode (212) which are sequentially arranged in a bottom-to-top manner; the drift region (201) is provided with a plurality of deep grooves (202); the deep grooves (202) are each internally provided with a groove source electrode field plate (204); the deep grooves (202) at two sides of the groove source electrode field plate (204) are each internally provided with a thick oxide layer (203); the thick oxide layers (203) at two sides of the groove source electrode field plate (204) are each provided with a grid (206); and a grid oxide layer (205) is arranged between the grid (206) and the inner wall of the deep groove (202). The trench MOSFET transistor of the utility model is capable of enhancing the voltage resistant capability of the transistor and obtaining more rapid switching speed with less loss as well.
Description
Technical field
The present invention relates to field of transistors, specifically a kind of Trench mosfet transistor with groove source electrode field plate.
Background technology
Slot type MOSFET (Trench MOSFET) is the New Type Power Devices that develops rapidly in recent years, because it has many premium properties than bipolar power component: such as high input impedance, low drive current, not few sub-storage effect, switching speed is fast, operating frequency is high, have negative current temperature coefficient, and good electric current self-adjusting ability is arranged, can effectively prevent the generation of electric current concentration of local and focus, CURRENT DISTRIBUTION is even, easily increase current capacity by parallel way, have stronger power handling capability, Heat stability is good, the safety operation area is large, do not have second breakdown etc., be widely used in the various electronic equipments, such as high-speed switching circuit, Switching Power Supply, uninterrupted power supply, high power amplifying circuit, high-fidelity music center circuit, the radio-frequency (RF) power amplification circuit, power conversion circuit, motor frequency conversion circuit, motor-drive circuit, solid state relay, the interface circuit between control circuit and the power termination etc.
Slot type MOSFET (Trench MOSFET) adopts silicon chip back side as drain electrode, make epitaxial loayer on the silicon chip, digging groove in epitaxial loayer, growth one deck gate oxide in groove, and then the depositing polysilicon gate electrode, separator BPSG is arranged between gate electrode and source electrode.Preparation channel body and source electrode in epitaxial loayer.
The shortcoming (take NMOS as example) of the slot type MOSFET of this structure (Trench MOSFET) is, first, grid polycrystalline current potential is greater than 0, thereby the electronics in the lightly doped epitaxial loayer of N-type of attraction except channel body is on gate oxide and epitaxial loayer interface, be equivalent to increase the doping content of epitaxial loayer, cause puncture voltage to reduce, limited the withstand voltage of device; The second, the parasitic capacitance that polysilicon gate, grid oxic horizon and drain electrode form has limited transistorized switching speed, has increased transistorized switching loss.
Summary of the invention
The invention provides a kind of Trench mosfet transistor with groove source electrode field plate, solved traditional Trench MOSFET voltage endurance capability relatively poor, the problem that Simultaneous Switching speed is slow, switching loss is larger.
The present invention is that the technical solution problem is achieved through the following technical solutions: a kind of Trench mosfet transistor with groove source electrode field plate comprises drain electrode, substrate, drift region and source electrode from the bottom up successively;
Described drift region is provided with some deep trench, be provided with the groove source electrode field plate in the deep trench, be provided with thick oxide layer in the deep trench of described groove source electrode field plate both sides, respectively be provided with a grid on the thick oxide layer of groove source electrode field plate both sides, be provided with grid oxic horizon between the inwall of grid and deep trench;
Be provided with the tagma between the described adjacent deep trenches, the top in described tagma is provided with two source regions and an ohmic contact regions, and two source regions lay respectively at the both sides of ohmic contact regions;
The top of described deep trench is provided with isolating oxide layer, and isolating oxide layer is provided with some contact holes, and ohmic contact regions is communicated with source electrode by contact hole.
The top of described groove source electrode field plate is upper along equal with deep trench.
The top of described grid is upper along equal with deep trench.
The lowermost end in described grid, grid oxic horizon and tagma all is positioned at more than the middle part of deep trench.
The present invention compared with prior art has the following advantages and beneficial effect:
(1) transistor of the present invention is when the MOSFET reverse bias, because the groove source electrode field plate is connected to the source electrode common ground, the groove source electrode field plate makes depletion region exhaust to the vertical direction of electric current, so just makes the original space charge region that laterally vertically exhausts simultaneously that only becomes along the space charge region that the sense of current exhausts.There is similar groove source electrode field plate usually in opposite side in the drift region, thereby the drift region exhausts from both sides, and this allows the doping content of drift region to be significantly higher than other situations to stop reverse electricity between drain electrode and the source electrode
PressRequired concentration when improving breakdown voltage transistor, does not improve transistorized conducting resistance like this, because the existence of groove source electrode field plate, compares with conventional transistor and to have reduced conducting resistance.
(2) groove source electrode field plate of the present invention separates grid and drain electrode, the gate leakage capacitance of conventional transistor is become present grid source electric capacity, again because the thick oxide layer below the groove source electrode field plate makes the grid source electric capacity of formation also very little, replace the gate leakage capacitance with the Miller effect of conventional transistor with less grid source electric capacity, thereby make the MOSFET can be with higher frequencies operations.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with embodiment, but embodiments of the present invention are not limited to this.
Embodiment:
As shown in Figure 1, the Trench mosfet transistor of the present embodiment comprises drain electrode 213, substrate 200, drift region 201 and source electrode 212 from the bottom up successively;
Drift region 201 is provided with some deep trench 202, be provided with groove source electrode field plate 204 in the deep trench 202, be provided with thick oxide layer 203 in the deep trench 202 of groove source electrode field plate 204 both sides, respectively be provided with a grid 206 on the thick oxide layer 203 of groove source electrode field plate 204 both sides, be provided with grid oxic horizon 205 between the inwall of grid 206 and deep trench 202;
Be provided with tagma 207 between the adjacent deep trenches 202 of the present embodiment, the top in described tagma 207 is provided with the both sides that two source regions 208 and 211, two source regions 208 of an ohmic contact regions lay respectively at ohmic contact regions 211;
The top of the deep trench 202 of the present embodiment is provided with isolating oxide layer 209, and isolating oxide layer 209 is provided with some contact holes 210, and ohmic contact regions 211 is communicated with source electrode 212 by contact hole 210.
The top of the groove source electrode field plate 204 of the present embodiment is upper along equal with deep trench 202.
The top of the grid 206 of the present embodiment is upper along equal with deep trench 202.
The lowermost end in the grid 206 of the present embodiment, grid oxic horizon 205 and tagma 207 all is positioned at more than the middle part of deep trench 202, also so to say that, grid 206, grid oxic horizon 205 and tagma 207 are positioned at the same level height substantially, this grid 206 is separated by grid oxic horizon 205 and tagma 207, also separates with groove source electrode field plate 204 simultaneously.
Groove source electrode field plate 204 is connected with source electrode 212, when the MOSFET reverse bias, groove source electrode field plate 204 is to the charge carrier of 201 li of the vertical direction depletion drift regions of electric current, because there is the identical structure with groove source electrode field plate 204 in 201 opposite side in the drift region, make the charge carrier of 201 li of drift regions depleted from both sides, thereby it is higher withstand voltage that MOSFET when cut-off had.This allows the doping content of drift region 201 to be significantly higher than traditional structure to stop the required concentration of reverse voltage between drain electrode 213 and the source electrode 212, namely when making device reach same breakdown voltage, the resistivity of drift region 201 with groove source electrode field plate structure is lower than the resistivity of the drift region of traditional structure.Therefore, reduced the conducting resistance of device.
In addition, groove source electrode field plate 204 separates grid 206 and drain electrode 213, compare with drain electrode with the grid of traditional structure, be equivalent to increase the field plate spacing between the parasitic capacitance that is formed by grid and drain electrode, therefore reduced the electric capacity of grid 204 to drain electrode 213, can make MOSFET with higher frequencies operations.
Claims (4)
1. the Trench mosfet transistor with groove source electrode field plate is characterized in that: comprise successively from the bottom up drain electrode (213), substrate (200), drift region (201) and source electrode (212);
Described drift region (201) is provided with some deep trench (202), be provided with groove source electrode field plate (204) in the deep trench (202), be provided with thick oxide layer (203) in the deep trench (202) of described groove source electrode field plate (204) both sides, respectively be provided with a grid (206) on the thick oxide layer (203) of groove source electrode field plate (204) both sides, be provided with grid oxic horizon (205) between the inwall of grid (206) and deep trench (202);
Be provided with tagma (207) between the described adjacent deep trenches (202), the top of described tagma (207) is provided with two source regions (208) and an ohmic contact regions (211), and two source regions (208) lay respectively at the both sides of ohmic contact regions (211);
The top of described deep trench (202) is provided with isolating oxide layer (209), and isolating oxide layer (209) is provided with some contact holes (210), and ohmic contact regions (211) is communicated with source electrode (212) by contact hole (210).
2. a kind of Trench mosfet transistor with groove source electrode field plate according to claim 1, it is characterized in that: the top of described groove source electrode field plate (204) is upper along equal with deep trench (202).
3. a kind of Trench mosfet transistor with groove source electrode field plate according to claim 1, it is characterized in that: the top of described grid (206) is upper along equal with deep trench (202).
4. a kind of Trench mosfet transistor with groove source electrode field plate according to claim 1 is characterized in that: the lowermost end of described grid (206), grid oxic horizon (205) and tagma (207) all is positioned at more than the middle part of deep trench (202).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220433435 CN202758892U (en) | 2012-08-29 | 2012-08-29 | Trench MOSFET transistor having groove source electrode field plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220433435 CN202758892U (en) | 2012-08-29 | 2012-08-29 | Trench MOSFET transistor having groove source electrode field plate |
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| Publication Number | Publication Date |
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| CN202758892U true CN202758892U (en) | 2013-02-27 |
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| CN 201220433435 Expired - Fee Related CN202758892U (en) | 2012-08-29 | 2012-08-29 | Trench MOSFET transistor having groove source electrode field plate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856385A (en) * | 2012-08-29 | 2013-01-02 | 成都瑞芯电子有限公司 | Trench MOSFET (metal-oxide-semiconductor field effect transistor) with trench source field plate and preparation method of trench MOSFET |
-
2012
- 2012-08-29 CN CN 201220433435 patent/CN202758892U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856385A (en) * | 2012-08-29 | 2013-01-02 | 成都瑞芯电子有限公司 | Trench MOSFET (metal-oxide-semiconductor field effect transistor) with trench source field plate and preparation method of trench MOSFET |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130227 Termination date: 20160829 |
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| CF01 | Termination of patent right due to non-payment of annual fee |