CN202712235U - Broadband three-junction lamination film solar energy battery - Google Patents
Broadband three-junction lamination film solar energy battery Download PDFInfo
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- CN202712235U CN202712235U CN 201220157973 CN201220157973U CN202712235U CN 202712235 U CN202712235 U CN 202712235U CN 201220157973 CN201220157973 CN 201220157973 CN 201220157973 U CN201220157973 U CN 201220157973U CN 202712235 U CN202712235 U CN 202712235U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a broadband three-junction lamination film solar energy battery, comprising a CuInGaSe solar energy battery for absorbing low-energy sunshine with a longer wavelength, a CdTe solar energy battery for absorbing high-energy sunshine with a shorter wavelength, and a CdZnTe solar energy battery with a gradually-changed band gap structure, and the batteries are orderly arranged. The broadband three-junction lamination film solar energy battery has the advantages of using CdZnTe with the gradually-changed band gap structure as the absorption layer of the sub-battery of the lamination solar energy battery, thereby greatly widening the sunshine spectrum absorption range; utilizing the advantage of CdTe of being high in absorption coefficient, thereby enhancing the absorption utilization rate of the lamination battery for long-wavelength light energy, simplifying manufacture process and reducing battery cost.
Description
Technical field
The utility model relates to thin-film solar cells, specifically refers to the high-performance, the broadband three knot overlapping thin film solar batteries that are comprised of tellurium zinc cadmium, cadmium telluride and Copper Indium Gallium Selenide.
Background technology
The extensive utilization of photovoltaic generation mainly faces the efficient that improves photovoltaic cell and the challenge that reduces cost.Compare the high material cost of crystal silicon solar energy battery, thin film solar cell can reduce device greatly to raw-material dependence, thereby reduces cost.Yet there is the lower problem of conversion efficiency in film class solar cell, and the Development of Novel efficient multi-node solar battery is to become academia and the common focus of paying close attention to of industrial circle.
No matter utilize crystalline silicon or utilize the solar cell of film preparation, basic structure all is single PN junction structure, the power conversion efficiency of calculating in theory is very high, but in fact laboratory level does not yet reach the theoretical transformation efficiency of estimating, its conversion efficiency of the product of producing is just lower, take cadmium telluride polycrystal film solar cell as example, the theoretical conversion efficiency that provides of calculating can reach more than 30%, but the best conversion efficiency in laboratory only has 16.7%, only has 10% as the transformation efficiency of the cadmium telluride polycrystal film solar cell of commercialization.
Along with continuous progress and the development of material preparation technology, adopt the high performance solar cells of laminated construction to become to improve the effective means of power conversion efficiency.Laminated construction generally is made of two or more PN junctions, and each PN junction absorbs the photon of corresponding wave band, and like this, a plurality of PN junctions just can absorb the sunlight of different-waveband, so that conversion efficiency increases substantially.
Change tellurium zinc cadmium (Cd
1-xZn
xTe) Zn content in (x value or title component), the important physical property of it some can change in the scope of anticipation.Lattice constant such as it changes with x value linearity between 0.61004-0.64829nm; Its energy gap changes at 1.45eV to adjustable continuously between 2.26eV with the x value.Utilizing graded bandgap material tellurium zinc cadmium to do the absorbed layer of battery can be by the SRH Compound Distribution in efficient (1) adjustment loss/intrinsic region of three aspects raising solar cells; (2) by the effective field of force of regulating action on electronics and hole, improve carrier collection efficient; (3) variation of absorption coefficient.If in deposition ternary alloy three-partalloy tellurium zinc cadmium process, rationally control x value is with the variation of film thickness, thereby prepare the tellurium zinc cadmium polycrystal film solar cell with graded bandgap structure, just can enlarge solar cell solar absorption spectral region, and then improve the electricity conversion of battery.
Cadmium telluride is that energy gap is the direct energy-gap semiconductor material of 1.45eV, the optimization energy gap that needs near solar cell very much, and absorption coefficient is about 105cm
-1, with regard to the scope that energy in the solar radiation spectrum is higher than the cadmium telluride energy gap, the cadmium telluride of 1 micron thickness can effectively absorb its 99%.
The energy gap of copper-indium-galliun-selenium film solar cell is 1.1eV, and has higher photoelectric conversion efficiency and good radiation resistance, is one of the material that is fit to very much to do the end battery of laminated cell.
Copper Indium Gallium Selenide, cadmium telluride and tellurium zinc cadmium graded bandgap structure are superimposed together, can greatly widen the solar spectrum absorption region, reach the purpose that improves photoelectric conversion efficiency.
Summary of the invention
The purpose of this utility model is exactly will propose a kind of three kinds of thin-film solar cells with Copper Indium Gallium Selenide, cadmium telluride and tellurium zinc cadmium graded bandgap to be superimposed together and to consist of the three knot overlapping thin film solar batteries can absorb the broadband solar spectrum.
Broadband three of the present utility model is tied overlapping thin film solar batteries, is partial to the copper indium gallium selenium solar cell and the cadmium telluride solar cell and the graded bandgap structure tellurium zinc cadmium solar cell that absorb the high energy sunlight of being partial to shortwave of the low energy sunlight of long wave by the absorption that is arranged in order.
Described copper indium gallium selenium solar cell comprises: substrate, deposit successively Mo dorsum electrode layer, p-type CuInGaSe absorbed layer, N-shaped CdS Window layer, the first transparency conducting layer on substrate.
Described cadmium telluride solar cell is included in the p-type cadmium telluride absorbed layer, N-shaped CdS Window layer, the second transparency conducting layer that deposit successively on the first transparency conducting layer.
Described tellurium zinc cadmium solar cell is included in the front electrode layer of p-type graded bandgap structure tellurium zinc cadmium absorbed layer, N-shaped CdS Window layer, electrically conducting transparent that deposits successively on the second transparency conducting layer.
Zn component x value in the described p-type graded bandgap structure tellurium zinc cadmium absorbed layer namely is gradient to 0 by 1 from the second transparency conducting layer in its thickness direction gradual change in the thickness the N-shaped CdS Window layer.
Described substrate is any in glass, polyimides, the stainless steel.
Electrode layer is ITO, SnO before described transparency conducting layer, the electrically conducting transparent
2: any among F, the ZnO:Al.
The utility model has the advantage of: will have the tellurium zinc cadmium of graded bandgap structure as the absorbed layer of sub-battery on the laminated film solar battery, the spectral absorption scope of greatly having widened sunlight; Utilize the high advantage of cadmium telluride absorption coefficient, strengthened the absorption rate of laminated cell to long wave luminous energy.The utility model takes full advantage of different energy gap materials, has greatly improved utilance and photoelectric conversion efficiency to solar spectrum, has simplified preparation technology, has reduced the battery cost.
Description of drawings
Fig. 1 is the structural representation of broadband three knot overlapping thin film solar batteries of the present utility model.
Embodiment
The below provides preferred embodiment of the present utility model, and elaborates by reference to the accompanying drawings.
See Fig. 1, three knot overlapping thin film solar batteries of the present utility model, its preparation process is as follows:
At first, thermal evaporation Mo dorsum electrode layer 2 successively on substrate 1, thickness is 10～50 nanometers.
Adopt coevaporation method, namely carry out reactive evaporation with Cu, In, Ga, Se, at Mo dorsum electrode layer 2 deposition p-type CuInGaSe absorbed layers 3, thickness is 1000～2000 nanometers.During evaporation, underlayer temperature is controlled at 300～500 ℃.
Adopt RF sputtering method in p-type CuInGaSe absorbed layer 3 deposition N-shaped CdS Window layer 4, thickness is 50～100 nanometers.
Deposit the first transparency conducting layer 5 of 50～200 nanometers in N-shaped CdS Window layer 4.
Adopt RF sputtering method at the first transparency conducting layer 5 deposition p-type cadmium telluride absorbed layers 6, thickness is 500～2000 nanometers.
Magnetron sputtering thickness is the N-shaped CdS Window layer 7 of 50～100 nanometers on p-type cadmium telluride absorbed layer 6.
Deposit the second transparency conducting layer 8 of 50～200 nanometers in N-shaped CdS Window layer 7.
Magnetron sputtering p-type graded bandgap structure tellurium zinc cadmium absorbed layer 9 on the second transparency conducting layer 8, thickness is 500～2000 nanometers.Zn component x value in the p-type graded bandgap structure tellurium zinc cadmium absorbed layer namely from transparency conducting layer 8, is gradient to 0 by 1 in its thickness direction gradual change in 500～2000 nanometers.
Magnetron sputtering thickness is the N-shaped CdS Window layer 10 of 50～100 nanometers on p-type graded bandgap structure tellurium zinc cadmium absorbed layer 9.
After preparing N-shaped CdS Window layer 10, place it in the quick anneal oven and anneal.Annealing temperature is at 200～400 ℃, annealing time 40～120 minutes.
After annealing finishes, electrode layer 11 before N-shaped CdS Window layer 10 deposits the electrically conducting transparent of 100～400 nanometers.
Claims (9)
1. a broadband three is tied overlapping thin film solar batteries, it is characterized in that: this battery is comprised of the copper indium gallium selenium solar cell of the low energy sunlight of the absorption deflection long wave that is arranged in order and cadmium telluride solar cell and the graded bandgap structure tellurium zinc cadmium solar cell that the high energy sunlight of shortwave is partial in absorption.
2. according to claim 1 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: described copper indium gallium selenium solar cell comprises: substrate (1), deposit successively Mo dorsum electrode layer (2), p-type CuInGaSe absorbed layer (3), N-shaped CdS Window layer (4), the first transparency conducting layer (5) on substrate.
3. according to claim 1 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: described cadmium telluride solar cell is included in the p-type cadmium telluride absorbed layer (6), N-shaped CdS Window layer (7), the second transparency conducting layer (8) that deposit successively on the first transparency conducting layer (5).
4. according to claim 1 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: described tellurium zinc cadmium solar cell is included in the front electrode layer (11) of p-type graded bandgap structure tellurium zinc cadmium absorbed layer (9), N-shaped CdS Window layer (10), electrically conducting transparent that deposits successively on the second transparency conducting layer (8).
5. according to claim 4 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: the Zn component x value in the described p-type graded bandgap structure tellurium zinc cadmium absorbed layer (9) is in its thickness direction gradual change, is gradient to 0 by 1 in namely from the second transparency conducting layer (8) to the thickness the N-shaped CdS Window layer (10).
6. according to claim 2 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: described substrate is any in glass, polyimides, the stainless steel.
7. according to claim 2 a kind of broadband three knot overlapping thin film solar batteries is characterized in that: described the first transparency conducting layer (5) is among ITO, SnO2:F, the ZnO:Al any.
8. according to claim 3 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: described the first transparency conducting layer (5) and the second transparency conducting layer (8) are any among ITO, SnO2:F, the ZnO:Al.
9. according to claim 4 a kind of broadband three knot overlapping thin film solar batteries, it is characterized in that: the front electrode layer (11) of described the second transparency conducting layer (8) and electrically conducting transparent is any among ITO, SnO2:F, the ZnO:Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220157973 CN202712235U (en) | 2012-04-13 | 2012-04-13 | Broadband three-junction lamination film solar energy battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220157973 CN202712235U (en) | 2012-04-13 | 2012-04-13 | Broadband three-junction lamination film solar energy battery |
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| CN202712235U true CN202712235U (en) | 2013-01-30 |
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| CN 201220157973 Expired - Lifetime CN202712235U (en) | 2012-04-13 | 2012-04-13 | Broadband three-junction lamination film solar energy battery |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355699A (en) * | 2015-11-04 | 2016-02-24 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination cadmium telluride thin film solar cell and preparation method thereof |
| CN110379865A (en) * | 2013-05-02 | 2019-10-25 | 第一阳光公司 | Photovoltaic devices and production method |
| CN113745363A (en) * | 2021-09-03 | 2021-12-03 | 上饶捷泰新能源科技有限公司 | Double-junction thin-film solar cell and manufacturing method thereof |
-
2012
- 2012-04-13 CN CN 201220157973 patent/CN202712235U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379865A (en) * | 2013-05-02 | 2019-10-25 | 第一阳光公司 | Photovoltaic devices and production method |
| CN105355699A (en) * | 2015-11-04 | 2016-02-24 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination cadmium telluride thin film solar cell and preparation method thereof |
| CN113745363A (en) * | 2021-09-03 | 2021-12-03 | 上饶捷泰新能源科技有限公司 | Double-junction thin-film solar cell and manufacturing method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130130 |