CN202601694U - Three-node laminated film solar battery module - Google Patents
Three-node laminated film solar battery module Download PDFInfo
- Publication number
- CN202601694U CN202601694U CN 201220157954 CN201220157954U CN202601694U CN 202601694 U CN202601694 U CN 202601694U CN 201220157954 CN201220157954 CN 201220157954 CN 201220157954 U CN201220157954 U CN 201220157954U CN 202601694 U CN202601694 U CN 202601694U
- Authority
- CN
- China
- Prior art keywords
- film solar
- solar battery
- battery
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a three-node laminated film solar battery module. The battery module is composed of a polysilicon film solar battery, a cadmium telluride film solar battery and a tellurium-zinc-cadmium film solar battery, wherein the batteries are arranged successively, the polysilicon film solar battery absorbs low-energy sunlight with biased long waves, the cadmium telluride film solar battery absorbs high-energy sunlight with biased short waves, and the tellurium-zinc-cadmium film solar battery is equipped with a gradual-change band gap structure. According to the utility model, the advantages of a silicon-based film battery and a II-VI family compound battery in aspects including efficiency, cost and mature technology are combined, wherein the II-VI family battery compound battery is added on the basis of the silicon-based film battery, thereby optimizing multiple-node structure and performance of combination of the II-VI family battery compound battery and the silicon-based film battery, fully utilizing materials with different forbidden band widths, greatly improving the utilization rate and the photoelectric conversion efficiency for solar spectrum, simplifying the preparation technology, and reducing the battery cost.
Description
Technical field
The utility model relates to silicon and II-VI compound semiconductor three knot overlapping thin film solar batteries; Specifically be meant stack cadmium telluride and graded bandgap tellurium zincium vestalium thin-film solar cell on silicon-base thin-film battery, process the three knot overlapping thin film solar battery assemblies that broadband absorbs.
Background technology
Energy problem has become the severe challenge that the whole mankind faces.Current, China is in economy and fast development of society period, and energy resource structure and energy security more and more become the bottleneck of restriction sustainable development, and therefore, more and more countries begins to seek through the exploitation solar energy resources the new power of economic development.
The extensive utilization of photovoltaic generation mainly faces efficient that improves photovoltaic cell and the challenge that reduces cost.Compare the high material cost of crystal silicon solar energy battery, thin film solar cell can reduce device greatly to raw-material dependence, thereby reduces cost.Yet there is the also lower problem of conversion efficiency in film class solar cell, develops new and effective multijunction solar cell and becomes academia and industrial circle Focal Point of Common Attention.
Along with the continuous progress and the development of material preparation technology, adopt the high performance solar cells of laminated construction to become to improve the effective means of power conversion efficiency.Laminated construction generally is made up of two or more PN junctions, and each PN junction absorbs the photon of corresponding wave band, and like this, a plurality of PN junctions just can absorb the sunlight of different-waveband, make conversion efficiency increase substantially.
Over the past two years; Preparation compound multi-knot thin film solar cell receives people's concern on silicon-base thin-film battery; Especially prepare cadmium telluride broad-band gap II-VI family battery on the silion cell again, because the 1.45eV direct band gap and the solar spectrum of cadmium telluride material are complementary, the band gap of its alloy material tellurium zinc cadmium can be regulated and control in the scope of broad; Has higher optical absorption coefficient; The cadmium telluride battery component efficient of mature industry production has surpassed 11%, therefore, is suitable as very much the material of multijunction solar cell.
Summary of the invention
The utility model is a support with the silion cell and the II-VI family semi-conductor cell technology of preparing of maturation, proposes a kind of three knot overlapping thin film solar battery assemblies that make full use of solar spectrum.
The three knot overlapping thin film solar battery assemblies of the utility model are made up of the multi-crystal silicon film solar battery of the low energy sunlight of the absorption deflection long wave that is arranged in order, the cadmium telluride diaphragm solar battery, the graded bandgap structure tellurium zincium vestalium thin-film solar cell that absorb the high energy sunlight of deflection shortwave.
Described multi-crystal silicon film solar battery comprises: silicon substrate, the Ag dorsum electrode layer, p type polysilicon layer, n type polysilicon layer, first transparency conducting layer that on silicon substrate, deposit successively.
Described cadmium telluride solar cell comprises: the p type cadmium telluride absorbed layer, n type CdS Window layer, second transparency conducting layer that on first transparency conducting layer of multi-crystal silicon film solar battery, deposit successively.
Described tellurium zinc cadmium solar cell comprises: electrode layer before the p type graded bandgap structure tellurium zinc cadmium absorbed layer that on second transparency conducting layer of cadmium telluride solar cell, deposits successively, n type CdS Window layer, the electrically conducting transparent.
Zn component x value in the described p type graded bandgap structure tellurium zinc cadmium absorbed layer promptly is gradient to 0 by 1 from second transparency conducting layer in its thickness direction gradual change in the thickness the n type CdS Window layer.
Electrode layer is ITO, SnO before described transparency conducting layer, the electrically conducting transparent
2: any among F, the ZnO:Al.
The invention has the advantages that: combine silicon-base thin-film battery and II-VI compounds of group battery advantage at aspects such as efficient, cost, technology maturations; Development is based on stack II-VI compounds of group solar cell material on the silicon-base thin-film battery; Optimize multijunction structure and performance that II-VI compounds of group battery combines with silicon-base thin-film battery; Make full use of different energy gap materials, improved utilance and photoelectric conversion efficiency greatly, simplified preparation technology, reduced the battery cost solar spectrum.
Description of drawings
Fig. 1 is the structural representation of the three knot overlapping thin film solar battery assemblies of the utility model.
Embodiment
Provide the preferred embodiment of the utility model below, and combine accompanying drawing to elaborate.
The three knot overlapping thin film solar battery assemblies of the utility model, its preparation process is following:
A, film growth
At first, deposition Ag dorsum electrode layer 2 on silicon substrate 1, thickness is 100～500 nanometers.
Adopt plasma reinforced chemical vapour deposition method on Ag dorsum electrode layer 2, grow successively the p type polysilicon layer 3 of 200～2000 nanometers and the n type polysilicon layer 4 of 20～200 nanometers.
On n type polysilicon layer 4, deposit first transparency conducting layer 5 of 50～200 nanometers.
Adopt RF sputtering method on first transparency conducting layer 5, to deposit p type cadmium telluride absorbed layer 6, thickness is 500～2000 nanometers.
Magnetron sputtering thickness is the n type CdS Window layer 7 of 50～100 nanometers on p type cadmium telluride absorbed layer 6.
On n type CdS Window layer 7, deposit second transparency conducting layer 8 of 50～200 nanometers.
Magnetron sputtering p type graded bandgap structure tellurium zinc cadmium absorbed layer 9 on second transparency conducting layer 8, thickness is 500～2000 nanometers.Zn component x value in the p type graded bandgap structure tellurium zinc cadmium absorbed layer promptly is gradient to 0 by 1 in its thickness direction gradual change in the thickness transparency conducting layer 8 to the n type CdS Window layer 10.
Magnetron sputtering thickness is the n type CdS Window layer 10 of 50～100 nanometers on p type graded bandgap structure tellurium zinc cadmium absorbed layer 9.
After preparing n type CdS Window layer 10, place it in the quick anneal oven and anneal.Annealing temperature is at 200～400 ℃, annealing time 40～120 minutes.
After annealing finishes, on n type CdS Window layer 10, deposit electrode layer 11 before the 3rd electrically conducting transparent of 100～400 nanometers.
The formation of B, three knot overlapping thin film solar battery assemblies
Use the 1064nm wavelength laser that all coatings are delineated, promptly carve always and pass through to Ag dorsum electrode layer 2 from electrode layer before the electrically conducting transparent 11, bare silicon substrate 1, ruling span 5～20mm, line width 30～80um forms the first groove groove 12.
Adopt heat spraying method, the first groove groove 12 is filled in any insulating material among EVA, the TPT.
Use the 522nm wavelength laser that the coatings except Ag dorsum electrode layer 2 is delineated; Promptly carve always and pass through to p type polysilicon layer 3 exposed Ag dorsum electrode layer 2, ruling span 5～20mm from electrode layer before the electrically conducting transparent 11; Line width 30～80um forms the second groove groove 13.The second groove groove 13 and the first groove groove 12 be 100～150um at interval.
Adopt magnetically controlled sputter method before the 3rd electrically conducting transparent, to deposit electrode layer 14 before the 4th electrically conducting transparent of 50～200 nanometers on the electrode layer 11, and transparent conductive material is filled in the second groove groove 13.
Use the 522nm wavelength laser that the coatings except Ag dorsum electrode layer 2 is delineated; Promptly carve always and pass through to p type polysilicon layer 3 exposed Ag dorsum electrode layer 2, ruling span 5～20mm from electrode layer before the electrically conducting transparent 14; Line width 30～80um forms three quarters of an hour wire casing 15.The three quarters of an hour wire casing 15 and second groove groove 13,100～150um at interval.
Burn-on positive wire 16 and negative wire 17 of electrode layer 14 the right and lefts accomplished the preparation of three knot overlapping thin film solar batteries before the 4th electrically conducting transparent, sees Fig. 1.
Claims (5)
1. tie the overlapping thin film solar battery assembly for one kind three, it is characterized in that: this battery is made up of the multi-crystal silicon film solar battery of the low energy sunlight of the absorption deflection long wave that is arranged in order, cadmium telluride diaphragm solar battery, the graded bandgap structure tellurium zincium vestalium thin-film solar cell that the high energy sunlight of shortwave is partial in absorption.
2. tie the overlapping thin film solar battery assemblies according to a kind of three of claim 1; It is characterized in that: described multi-crystal silicon film solar battery comprises: silicon substrate (1), the Ag dorsum electrode layer (2), p type polysilicon layer (3), n type polysilicon layer (4), first transparency conducting layer (5) that on silicon substrate, deposit successively.
3. tie the overlapping thin film solar battery assemblies according to a kind of three of claim 1; It is characterized in that: described cadmium telluride diaphragm solar battery comprises: the p type cadmium telluride absorbed layer (6), n type CdS Window layer (7), second transparency conducting layer (8) that on first transparency conducting layer (5) of multi-crystal silicon film solar battery, deposit successively.
4. tie the overlapping thin film solar battery assemblies according to a kind of three of claim 1; It is characterized in that: described tellurium zincium vestalium thin-film solar cell comprises: electrode layer (11) before the p type graded bandgap structure tellurium zinc cadmium absorbed layer (9) that on second transparency conducting layer (8) of cadmium telluride diaphragm solar battery, deposits successively, n type CdS Window layer (10), the 3rd electrically conducting transparent.
5. tie the overlapping thin film solar battery assemblies according to a kind of three of claim 4; It is characterized in that: the Zn component x value in the described p type graded bandgap structure tellurium zinc cadmium absorbed layer (9) promptly is gradient to 0 by 1 from transparency conducting layer in its thickness direction gradual change in the thickness the n type CdS Window layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220157954 CN202601694U (en) | 2012-04-13 | 2012-04-13 | Three-node laminated film solar battery module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220157954 CN202601694U (en) | 2012-04-13 | 2012-04-13 | Three-node laminated film solar battery module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202601694U true CN202601694U (en) | 2012-12-12 |
Family
ID=47319217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220157954 Expired - Fee Related CN202601694U (en) | 2012-04-13 | 2012-04-13 | Three-node laminated film solar battery module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202601694U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983204A (en) * | 2012-12-18 | 2013-03-20 | 深圳市创益科技发展有限公司 | Three-junction laminated thin film solar cell and fabrication method thereof |
| CN104538505A (en) * | 2014-12-15 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | Preparation method for stacked thin film cell and stacked thin film cell |
| CN108365795A (en) * | 2018-04-10 | 2018-08-03 | 浙江大学 | A kind of cascade thermal photovoltaic system of difference forbidden band photovoltaic cell and its heat energy recovering method |
-
2012
- 2012-04-13 CN CN 201220157954 patent/CN202601694U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983204A (en) * | 2012-12-18 | 2013-03-20 | 深圳市创益科技发展有限公司 | Three-junction laminated thin film solar cell and fabrication method thereof |
| CN102983204B (en) * | 2012-12-18 | 2015-09-30 | 深圳市创益科技发展有限公司 | A kind of three knot overlapping thin film solar battery and manufacture methods thereof |
| CN104538505A (en) * | 2014-12-15 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | Preparation method for stacked thin film cell and stacked thin film cell |
| CN108365795A (en) * | 2018-04-10 | 2018-08-03 | 浙江大学 | A kind of cascade thermal photovoltaic system of difference forbidden band photovoltaic cell and its heat energy recovering method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Efaz et al. | A review of primary technologies of thin-film solar cells | |
| CN102306666B (en) | Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof | |
| CN103077980B (en) | A kind of copper-indium-galliun-selenium film solar cell and preparation method thereof | |
| CN102054897B (en) | Method for preparing thin film solar cell from multi-element alloy single target material | |
| CN101872793B (en) | Laminated solar cell and manufacturing method thereof | |
| Bosio et al. | Manufacturing of CdTe thin film photovoltaic modules | |
| Zeman | Thin-film silicon PV technology | |
| CN105632903A (en) | Sodium-potassium co-doping technology for preparing high-efficiency copper indium gallium selenide solar cell | |
| Myong et al. | Efficient outdoor performance of esthetic bifacial a-Si: H semi-transparent PV modules | |
| Benda | Photovoltaics towards terawatts–progress in photovoltaic cells and modules | |
| CN102332499B (en) | Method for utilizing microparticles to produce double-textured transparent electrode | |
| CN102610673A (en) | Copper zinc tin sulfur compound thin-film solar cell and preparation method thereof | |
| CN202601694U (en) | Three-node laminated film solar battery module | |
| CN102437237A (en) | Chalcopyrite type thin film solar cell and manufacturing method thereof | |
| CN104617183A (en) | CIGS (Copper Indium Gallium Selenide)-based thin film solar cell and preparation method thereof | |
| CN101393942B (en) | Polycrystalline-silicon carbide lamination thin-film solar cell | |
| CN102544230A (en) | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film | |
| CN202712235U (en) | Broadband three-junction lamination film solar energy battery | |
| CN102709393A (en) | Method for preparing thin-film solar cells from copper-zinc-tin sulfur compound single target materials | |
| CN103000738A (en) | Mechanical laminated cadmium telluride/polycrystalline silicon solar cell combination | |
| CN104600146A (en) | Double-sided thin-film solar cell | |
| KR101062319B1 (en) | Window manufacturing method using a cell and a cassette used therein | |
| CN101908569B (en) | Solar cell | |
| KR20120043315A (en) | Solar cell having a absorption layer of compound semiconductor | |
| CN102856421A (en) | Novel three-junction thin-film solar cell and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121212 Termination date: 20210413 |