CN202607857U - Wire cutting silicon single crystal - Google Patents
Wire cutting silicon single crystal Download PDFInfo
- Publication number
- CN202607857U CN202607857U CN 201220178912 CN201220178912U CN202607857U CN 202607857 U CN202607857 U CN 202607857U CN 201220178912 CN201220178912 CN 201220178912 CN 201220178912 U CN201220178912 U CN 201220178912U CN 202607857 U CN202607857 U CN 202607857U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- silicon single
- wire
- guide ribs
- steel wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model relates to a wire cutting silicon single crystal which comprises a crystal ingot (1), and a guide bar (2) is bonded to the crystal ingot (1) at an initial position point where a steel wire is cut in. According to the wire cutting silicon single crystal, the guide bar is added, when the wire breaks during a cutting process, the single crystal is not needed to be completely carried out of a wire mesh, the steel wire walks in the guide bar, the operation of a definitive orbit is started, and badness produced by secondary wire feeding is reduced.
Description
Technical field
The utility model relates to silicon single crystal line cutting manufacturing technology field, particularly relates to a kind of line and cuts monocrystalline.
Background technology
In the cutting single-wafer rod motion, often point of penetration can cause bigger degree of crook, and then has influence on the warp parameter quality of full wafer silicon chip.Simultaneously, when broken string takes place in the line cutting process when, carry away monocrystalline again inlet wire can run into very big difficulty, cause the inaccurate or gauze deviation phenomenon of inlet wire, cause silicon chip thickness, crooked adverse consequences such as serious, so that cut silicon chip loss from spoilage cost.
Summary of the invention
The utility model technical problem to be solved provides a kind of line and cuts silicon single crystal, makes steel wire before running into monocrystalline, reach good state.
The utility model solves the technical scheme that its technical problem adopted: provide a kind of line to cut silicon single crystal, comprise crystal ingot, said crystal ingot has a guide ribs at the original position point bonding of steel wire incision.
The width of said guide ribs is 10mm.
The thickness of said guide ribs is 8～10mm.
Said guide ribs adopts resin or graphite or glass to process.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the utility model compared with prior art has following advantage and good effect: the utility model is after adding guide ribs; In when, in the cutting process broken string taking place when, need not fully monocrystalline be carried away gauze, let steel wire in guide ribs, walk about; Open the operation of definitive orbit, reduce once more bad that inlet wire produces, thereby make steel wire before running into monocrystalline, reach good state; And then reduce the skew when cutting, improve parameter quality.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is steel wire cabling sketch map in guide ribs.
The specific embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment only to be used to the utility model is described and be not used in the restriction the utility model scope.Should be understood that in addition those skilled in the art can do various changes or modification to the utility model after the content of having read the utility model instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
The embodiment of the utility model relates to a kind of line and cuts silicon single crystal, and is as shown in Figure 1, comprises crystal ingot 1, and said crystal ingot 1 has a guide ribs 2 at the original position point bonding of steel wire incision.The utility model is the original position that contacts gauze at silicon single crystal, increases bonding guide ribs 2, stablizes gauze through cutting guide ribs 2, makes steel wire before running into monocrystalline, reach good state, and then reduces the skew when cutting, and improves parameter quality.After adding guide ribs 2, when in the cutting process broken string taking place, need not fully monocrystalline be carried away gauze, let the steel wire (see figure 2) of in guide ribs, walking about, the operation of opening definitive orbit reduces once more bad that inlet wire produces.
Behind monocrystalline ad-hoc location binding resin bar; Confirm the original position point of steel wire incision monocrystalline, the wide about 10mm that bonds again in this position, the guide ribs of thick about 8～10mm; Its material can be selected crisp hard materials such as resin, graphite, glass for use, being good near silicon single crystal material characteristic.Noting the thickness of control glue line, firmly is prerequisite to bond, and glue-line is thin more favourable more.The guide ribs Material Selection directly has influence on the effect of its use, and more near the silicon materials characteristic, its simulation cutting effect is good more, can reach the purpose of stablizing the gauze cutting more.
If A breaks at the place in the position in the line cutting process, must arrange gauze and cabling again.Having under the situation of guide ribs, monocrystalline does not need to carry away fully gauze, only need monocrystalline be lifted to guide ribs centre position B and carry out cabling; Can move new gauze, keep original cutting track again, avoid tool setting inlet wire again; Effectively avoid the steel wire dislocation; Practice thrift the processing time, reduces bad, the raising yield rate.
Claims (4)
1. a line is cut silicon single crystal, comprises crystal ingot (1), it is characterized in that, said crystal ingot (1) has a guide ribs (2) at the original position point bonding of steel wire incision.
2. line according to claim 1 is cut silicon single crystal, it is characterized in that, the width of said guide ribs (2) is 10mm.
3. line according to claim 1 is cut silicon single crystal, it is characterized in that, the thickness of said guide ribs (2) is 8～10mm.
4. line according to claim 1 is cut silicon single crystal, it is characterized in that, said guide ribs (2) adopts resin or graphite or glass to process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220178912 CN202607857U (en) | 2012-04-24 | 2012-04-24 | Wire cutting silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220178912 CN202607857U (en) | 2012-04-24 | 2012-04-24 | Wire cutting silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202607857U true CN202607857U (en) | 2012-12-19 |
Family
ID=47341588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220178912 Expired - Lifetime CN202607857U (en) | 2012-04-24 | 2012-04-24 | Wire cutting silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202607857U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
| CN109760221A (en) * | 2018-12-29 | 2019-05-17 | 珠海鼎泰芯源晶体有限公司 | A kind of wire-electrode cutting and processing method of large scale thin slice inp wafer |
-
2012
- 2012-04-24 CN CN 201220178912 patent/CN202607857U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
| CN109760221A (en) * | 2018-12-29 | 2019-05-17 | 珠海鼎泰芯源晶体有限公司 | A kind of wire-electrode cutting and processing method of large scale thin slice inp wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX2013001239A (en) | Shaped cutting elements for earth-boring tools, earth-boring tools including such cutting elements, and related methods. | |
| TW200741918A (en) | Tail wire cutting method and bonding apparatus | |
| CN103571411B (en) | Dual-component epoxy resin adhesive for splicing silicon block or silicon rod and preparation method of dual-component epoxy resin adhesive | |
| CN202607857U (en) | Wire cutting silicon single crystal | |
| WO2012021349A3 (en) | Wire loops, methods of forming wire loops, and related process | |
| CN109624112A (en) | Buddha's warrior attendant wire cutting method | |
| CN103072211A (en) | Fretsaw cutting method | |
| CN205552917U (en) | Coping saw cutting frock of silicon rod | |
| CN203680051U (en) | Sapphire ingot A-edge orienting grinding device | |
| CN103434031A (en) | Method for cutting silicon ingot | |
| CN103022284A (en) | LED chip cutting method and LED chip manufactured by same | |
| CN205343490U (en) | Many line cutting device of curved surface of sapphire | |
| CN108505121A (en) | A kind of etching method improving polysilicon chip cashmere output rate | |
| CN202213067U (en) | Multi-wire wafer cutting tooling | |
| CN201816147U (en) | Semiconductor chip splitting tool | |
| CN101791144A (en) | Method for controlling stored tobacco leave/cut tobacco flexible adjustable spreading loading manner of top cabinet | |
| CN204686296U (en) | A kind ofly send welding wire mechanism with what be coated with solder flux function | |
| CN110497544A (en) | A kind of cutting method applied to ultralow TTV monocrystalline silicon piece | |
| CN201979615U (en) | Silicon rod slicing auxiliary device | |
| CN205835533U (en) | A kind of flexible cryogenic deep cooling isolation hot material hydraulic shearing machine | |
| CN105365062B (en) | Method for cutting off heads and tails for squarer | |
| TW200943402A (en) | Method for forming adhesive dies singulated from a wafer | |
| CN106313334A (en) | Cutting device used in quartz stone board production | |
| CN203019548U (en) | Silicon rod provided with chamfering guide strip | |
| CN203003696U (en) | Mortar nozzle for silicon wafer cutting machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121219 |
|
| CX01 | Expiry of patent term |