CN202595259U

CN202595259U - Magnetron sputtering equipment

Info

Publication number: CN202595259U
Application number: CN 201220193104
Authority: CN
Inventors: 贺凡; 刘壮; 张军; 冯叶
Original assignee: Shenzhen Institute of Advanced Technology of CAS
Current assignee: Shenzhen Institute of Advanced Technology of CAS
Priority date: 2012-04-28
Filing date: 2012-04-28
Publication date: 2012-12-12
Anticipated expiration: 2022-04-28

Abstract

The utility model discloses magnetron sputtering equipment, which comprises a sputtering chamber, a target arranged in the sputtering chamber, an extraction opening formed in the sputtering chamber and in vacuum connection with an affiliated vacuum system of the magnetron sputtering equipment, an air inlet pipe used for delivering gas to the sputtering chamber and provided with an air outlet, and a baffle plate arranged between the air inlet pipe and the extraction opening. The air inlet pipe and the baffle plate are arranged in the sputtering chamber. According to the magnetron sputtering equipment, due to an isolating effect of the baffle plate, influence of an extraction force on gas concentration in the sputtering chamber is weakened, so that the gas concentration in the sputtering chamber is relatively uniform. In addition, the gas enters the sputtering chamber from the air inlet pipe through the air outlet, gas molecules collide with the baffle plate, and a part of gas molecules move in the direction opposite to the extraction opening within certain distance, so that the gas molecules in a surface area of the target are distributed relatively uniformly.

Description

Magnetron sputtering equipment

Technical field

The utility model relates to the sputtering technology field, particularly relates to a kind of magnetron sputtering equipment.

Background technology

Sputter is meant with high-energy particle bombardment solid target material surface, makes atom and the molecule and the incident high energy particle exchange kinetic energy of solid surface, thus the phenomenon of splashing out from solid surface.Therefore atom that sputters out or atomic group have certain energy owing to exchanged kinetic energy with high energy particle, can condense again, are deposited on the solid substrate surface and form film.The sputter thin films normally feeds argon gas in the sputtering chamber, utilizes the positive ion high speed bombarding cathode target under electric field action that produces after the geseous discharge ionization, and the atom or the molecule of cathode targets hit, and is splashed to substrate surface to be plated and is deposited as film.In practical application, generally change the electronic motion direction through magnetic field, fetter and prolong the electronic motion track with this, increase effective bombardment of anticathode target, be called magnetron sputtering.

The process of magnetron sputtering deposition film is generally carried out in vacuum environment, and the homogeneity of sedimentary film thickness has very big influence for the quality of film on film thickness, the especially large area substrates.Magnetron sputtering method deposit film, the factor that influences film gauge uniformity mainly contain the homogeneity of the homogeneity in magnetic field, electric field, the homogeneity of bleeding and the distribution of the argon gas sent into whether even etc.Under the certain situation of magnetic field and electric field performance, whether the distribution of homogeneity of bleeding and the argon gas of sending into evenly becomes the principal element that influences film gauge uniformity.

Traditional magnetron sputtering equipment adopts air supplying methods such as negative electrode gas distribution method and secondary gas distribution method, can well solve the problem of the distributing homogeneity of the argon gas of sending into.But; Most magnetron sputtering equipment are when keeping sputtering pressure; A bleeding point only is set and adopts molecular pump to bleed; This can cause the gas in the sputtering chamber difference occurring near an end of bleeding point with away from an end concentration of bleeding point, because the effect gas concentration of bleeding is less relatively, in sputtering chamber, forms concentration gradient near an end of bleeding point.Concentration gradient can cause that to be deposited on on-chip uneven film thickness even, thereby influences the quality of film.If the symmetric position place is provided with two bleeding points on the wall of the chamber of sputtering chamber, adopt two cover air-bleed systems to bleed with identical pumping speed, can make the interior gas concentration of sputtering chamber more even.But set up a cover air-bleed system, single the molecular pump price of keeping sputtering pressure is just more than several ten thousand yuans more, and the cost of equipment will significantly increase.

The utility model content

Based on this, be necessary problem to the gas concentration gradient that produces in the sputtering chamber of traditional magnetron sputtering equipment, provide a kind of and can make the interior gas concentration of sputtering chamber magnetron sputtering equipment uniformly.

A kind of magnetron sputtering equipment comprises sputtering chamber, is installed on the target in the said sputtering chamber, and be opened on said sputtering chamber and with said magnetron sputtering equipment accessory vacuum system between the bleeding point that links to each other of vacuum; Also comprise being used for gas is sent in the said sputtering chamber, had the inlet pipe of production well, and be arranged at the baffle plate between said inlet pipe and the said bleeding point, said inlet pipe and said baffle plate are installed in the said sputtering chamber.

Among embodiment, said inlet pipe comprises loop pipe and the pneumatic tube that is connected with said loop pipe therein, and said loop pipe circumferentially is provided with along said target, and said loop pipe tube wall is provided with a plurality of production wells.

Therein among embodiment, the said loop pipe formation closed hoop that joins end to end, this closed hoop is around said target and be lower than the upper surface of said target.

Among embodiment, said baffle plate circumferentially is arranged at the periphery of said loop pipe along said target therein.

Among embodiment, the upper edge of said baffle plate is higher than the upper surface of said target therein.

Therein among embodiment, in said loop pipe comprises pipe and be sheathed on said in outer tube outside the pipe, said in pipe be provided with production well with said outer tube, said pneumatic tube with said in pipe be connected, said in pipe connection from beginning to end.

Therein among embodiment, said in production well and the opposing setting of production well of outer tube of pipe.

Therein among embodiment, said pneumatic tube be divided into two-way through Y-tube with said in pipe be connected.

Among embodiment, said a plurality of production wells begin from the junction of said loop pipe and said pneumatic tube along said loop pipe to the both sides distribution gradient therein.

Among embodiment, said a plurality of production wells begin from the junction of said loop pipe and said pneumatic tube along said loop pipe to the both sides uniform distribution therein.

Above-mentioned magnetron sputtering equipment because the buffer action of baffle plate has weakened the influence of the power of bleeding to gas concentration in the sputtering chamber, thereby makes the interior gas concentration of sputtering chamber more even.In addition, gas gets into sputtering chamber from inlet pipe through production well, and gas molecule and baffle plate bump, and understands some gas molecule and in certain distance, moves to the opposite direction of bleeding point, makes the gas molecule in target material surface zone distribute more even.

Description of drawings

Fig. 1 is the structural representation of the magnetron sputtering equipment of an embodiment;

Fig. 2 is the sectional view of baffle plate, target and inlet pipe among Fig. 1;

Fig. 3 is the structural representation of part loop pipe among Fig. 1;

Fig. 4 is the sectional view of part loop pipe among Fig. 1.

Embodiment

The uneven problem of the sedimentary film of substrate that causes for the gas concentration gradient that produces in the sputtering chamber that solves traditional magnetron sputtering equipment provides a kind of gas concentration magnetron sputtering equipment uniformly that can make in the sputtering chamber.

As shown in Figure 1, the magnetron sputtering equipment of an embodiment comprises sputtering chamber 110, target 120, is connected to bleeding point 130, inlet pipe 140 and the baffle plate 150 of the vacuum system that magnetron sputtering equipment vacuumizes.Target 120 is installed in the sputtering chamber 110.

Sputtering chamber 110 is the reaction chambers that carry out substrate coating in the magnetron sputtering equipment.Usually the top of sputtering chamber 110 is equipped with stone or metal plate for standing a stove on as a precaution against fire, is used to lay substrate to be coated.

Target 120 is installed in the sputtering chamber 110.Target 120 is installed on the bottom centre of sputtering chamber 110, and is relative with the stone or metal plate for standing a stove on as a precaution against fire at top.

Bleeding point 130 is opened on sputtering chamber 110, and makes sputtering chamber 110 connect vacuum-pumping system, in order to extract the gas in the sputtering chamber 110, for sputtering chamber prepares base vacuum, to keep the air pressure in the sputtering chamber 110.

Inlet pipe 140 is used for gas is sent into sputtering chamber 110.As shown in Figure 2, inlet pipe 140 comprises loop pipe 142 and the pneumatic tube 144 that is connected with loop pipe 142.Loop pipe 142 circumferentially is provided with along target 120.Loop pipe 142 tube walls are provided with a plurality of production well 146 (see figure 3)s.A plurality of production wells 146 begin along loop pipe 142 to both sides distribution gradient or uniform distribution from the junction of loop pipe 142 with pneumatic tube 146.In the present embodiment, the said loop pipe formation closed hoop that joins end to end, closed hoop is around target 120 and be lower than the upper surface (see figure 2) of said target.A plurality of production wells 146 begin along loop pipe to both sides distribution gradient or uniform distribution from the junction of said loop pipe and said pneumatic tube.The production well 146 of loop pipe 142 can evenly punch; When if loop pipe 142 sizes are big; Can be with beginning along loop pipe to the both sides distribution gradient from the junction of loop pipe 142 with pneumatic tube 144; Nearer pitch of holes apart from the junction can be suitably big, and far away apart from the junction, pitch of holes can be suitably a little bit smaller.

Baffle plate 150 is arranged between inlet pipe 140 and the bleeding point 130.In the present embodiment, baffle plate 150 circumferentially is arranged at the periphery of loop pipe 142 along target 120.The regional open upper end that baffle plate 150 surrounds, the upper edge of baffle plate 150 is higher than the upper surface of target 120.Baffle plate 150 adopts stainless material.In the middle of baffle plate 150 was trapped among loop pipe 142 and target 120, baffle plate 150 upper edges should exceed certain altitude than target 120 upper surfaces, simultaneously should be not too high, be advisable with the motion that does not influence stone or metal plate for standing a stove on as a precaution against fire.Can be according to the distance between concrete interpretation adjustment baffle plate 150 and the target 120, and the density degree of production well and the difference of altitude between loop pipe 142 anchor rings and target 120 surfaces on the loop pipe 142.In general, baffle plate 150 is more little with the spacing of target 120, and the distance that exceeds target 120 surfaces is big more, and the gas concentration gradient in 150 regions of baffle plate will be more little.Therefore the distance of baffle plate 150 and target 120 sidewalls is unsuitable excessive; But also should not be close to target 120 sidewalls simultaneously; In order to avoid sputtering particle and baffle plate 150 have too much collision to produce disintegrating slag to drop on target 120 surfaces in the sputter procedure, thereby influence the quality of spatter film forming.

Above-mentioned magnetron sputtering equipment because the buffer action of baffle plate 150 has weakened the influence of the power of bleeding to gas concentration in the sputtering chamber 110, thereby makes sputtering chamber 110 interior gas concentrations more even.In addition; Gas gets into sputtering chamber 110 from inlet pipe 140 through production well 142; Gas molecule and baffle plate 150 bump, and understand some gas molecule and in certain distance, move to the opposite direction of bleeding point, make the gas molecule of target 120 surf zones distribute more even.

As shown in Figure 2, pipe 1422 and the outer tube 1424 that is sheathed on interior pipe 1422 in loop pipe 142 comprises.As shown in Figure 3, interior pipe 1422 is provided with production well 146 with outer tube 1424.As shown in Figure 1, pneumatic tube 144 is connected with interior pipe 1422, and interior pipe 1422 head and the tail are communicated with.

As shown in Figure 4, in the embodiment of the utility model, production well 146 comprises interior pipe production well (indicating) that is arranged at interior pipe 1422 and the outer tube production well (indicating) that is arranged at outer tube 1424.Interior pipe production well and the opposing setting of outer tube production well.

As shown in Figure 1, in the present embodiment, pneumatic tube 144 is divided into two-way and is connected with interior pipe 1422 through Y-tube 148.Pipe 1422 in Y-tube 148 directly connects.144 fens two-way of gas pneumatic tube get in the interior pipe 1422 of loop pipe 142, and are in the space in the production well from interior pipe 1422 tube walls gets into then between pipe 1422 and the outer tube 1424, last again by the entering of the production well on the outer tube 1424 sputtering chamber 110.In the loop pipe 142 design of pipe 1422 and outer tube 1424 increased gas molecule before getting into sputtering chamber 110 each other and and tube wall between collision frequency, make at last the gas molecule number that different production wells come out from the outer tube 1424 be tending towards even.In other embodiments, pneumatic tube 144 can also be divided into one the tunnel, the three tunnel, the four tunnel etc. and is connected with interior pipe.

Above-mentioned magnetron sputtering equipment is provided with loop pipe 142 around target 120, guaranteed that not only the air output in each hole is even relatively, has guaranteed that simultaneously gaseous diffusion is also even relatively to 120 last times of target.The setting of baffle plate 150; Increased the collision interface of gas molecule on the one hand; Especially near the gas molecule of bleeding point one side; Owing to the impact effect of baffle plate, understand some gas molecule and in certain distance, move, make the gas molecule of target 120 surf zones distribute more even to the opposite direction of bleeding point.On the other hand; Because the existence of baffle plate 150; Behind the zone that gas molecule entering baffle plate 150 is surrounded; Weakened to some extent by the direct draft effect meeting of air-bleed system, the concentration gradient of the gas molecule that this zone that baffle plate will be fenced up is interior helps the uniform distribution of target 120 surf zone gas molecules equally less than this extra-regional concentration gradient; Thereby the number of particles that makes target 120 surfaces sputter out everywhere weakens because of the inhomogeneous broadening effect that the gas distribution inequality causes, and finally improves the homogeneity of sedimentary film.Above-mentioned magnetron sputtering equipment only needs an air-bleed system that the homogeneity that is deposited on on-chip film is improved, and need not to set up any equipment, has reduced equipment cost.

The above embodiment has only expressed several kinds of embodiments of the utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to the protection domain of the utility model.Therefore, the protection domain of the utility model patent should be as the criterion with accompanying claims.

Claims

1. a magnetron sputtering equipment comprises sputtering chamber, is installed on the target in the said sputtering chamber, and be opened on said sputtering chamber and with said magnetron sputtering equipment accessory vacuum system between the bleeding point that links to each other of vacuum; It is characterized in that also comprise being used for gas is sent in the said sputtering chamber, had the inlet pipe of production well, and be arranged at the baffle plate between said inlet pipe and the said bleeding point, said inlet pipe and said baffle plate are installed in the said sputtering chamber.

2. magnetron sputtering equipment according to claim 1 is characterized in that, said inlet pipe comprises loop pipe and the pneumatic tube that is connected with said loop pipe, and said loop pipe circumferentially is provided with along said target, and said loop pipe tube wall is provided with a plurality of production wells.

3. magnetron sputtering equipment according to claim 2 is characterized in that, the said loop pipe formation closed hoop that joins end to end, and this closed hoop is around said target and be lower than the upper surface of said target.

4. magnetron sputtering equipment according to claim 2 is characterized in that, said baffle plate circumferentially is arranged at the periphery of said loop pipe along said target.

5. magnetron sputtering equipment according to claim 3 is characterized in that, the upper edge of said baffle plate is higher than the upper surface of said target.

6. magnetron sputtering equipment according to claim 2; It is characterized in that manage and be sheathed on the outer tube outside the said interior pipe in said loop pipe comprises, said interior pipe and said outer tube are provided with production well; Said pneumatic tube is connected with said interior pipe, the connection of said interior pipe head and the tail.

7. magnetron sputtering equipment according to claim 6 is characterized in that, the production well of said interior pipe and the opposing setting of production well of outer tube.

8. magnetron sputtering equipment according to claim 7 is characterized in that, said pneumatic tube is divided into two-way and is connected with said interior pipe through Y-tube.

9. according to any described magnetron sputtering equipment in the claim 2 to 8, it is characterized in that said a plurality of production wells begin from the junction of said loop pipe and said pneumatic tube along said loop pipe to the both sides distribution gradient.

10. according to any described magnetron sputtering equipment in the claim 2 to 8, it is characterized in that said a plurality of production wells begin from the junction of said loop pipe and said pneumatic tube along said loop pipe to the both sides uniform distribution.