JP2016117923A - Sputtering apparatus - Google Patents

Sputtering apparatus Download PDF

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JP2016117923A
JP2016117923A JP2014256798A JP2014256798A JP2016117923A JP 2016117923 A JP2016117923 A JP 2016117923A JP 2014256798 A JP2014256798 A JP 2014256798A JP 2014256798 A JP2014256798 A JP 2014256798A JP 2016117923 A JP2016117923 A JP 2016117923A
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plate
target
substrate
electrode plate
holes
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JP6509553B2 (en
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小風　豊
Yutaka Kokaze
豊 小風
純一 濱口
Junichi Hamaguchi
純一 濱口
靖 樋口
Yasushi Higuchi
靖 樋口
徳康 佐々木
Noriyasu Sasaki
徳康 佐々木
琢巳 湯瀬
Takumi Yuse
琢巳 湯瀬
寿浩 寺澤
Hisahiro Terasawa
寿浩 寺澤
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Ulvac Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of suppressing the inactivation of ions on a regulation plate to improve the directivity of ions without spoiling a function of preventing sputtering particles from being obliquely incident on a substrate edge part.SOLUTION: A sputtering apparatus SM comprises: a vacuum chamber 1 in which a substrate W to be processed and a target 21 are arranged to face each other; a regulation plate 6 having a plurality of through-holes 61 for regulating incidence angles of sputtering particles on the substrate W to an angle of a predetermined range between the substrate W and the target 21; an electrode plate 8 in which a plurality of through-holes 81 are opened between the target 21 and the regulation plate 6, the through-holes 81 having the same hole axes 81a as the hole axes 61a of the through-holes of the regulation plate 6; and holding means E3 for holding the potential of the electrode plate 8 higher than that of the regulation plate 6.SELECTED DRAWING: Figure 1

Description

本発明は、スパッタリング装置に関し、より詳しくは、高アスペクト比を有する微細なホールの内面にカバレッジよく薄膜を成膜することに適したものに関する。   The present invention relates to a sputtering apparatus, and more particularly to an apparatus suitable for forming a thin film with good coverage on the inner surface of a fine hole having a high aspect ratio.

半導体デバイスの製造工程には、所定のアスペクト比を有するビアホールやコンタクトホールの内面（内壁面及び底面）にＣｕ膜からなるシード層を成膜する工程があり、このようなＣｕ膜の成膜に用いる成膜装置として、スパッタリング装置が例えば特許文献１で知られている。このものでは、処理すべき基板とターゲットとが対向配置される真空チャンバを備え、真空チャンバ内にスパッタガスを導入し、ターゲットに電力投入して基板とターゲットとの間にプラズマを形成し、ターゲットをスパッタリングして飛散したスパッタ粒子（ＣｕラジカルやＣｕイオン）を基板に付着、堆積することでＣｕ膜が成膜される。   The semiconductor device manufacturing process includes a step of forming a seed layer made of a Cu film on the inner surface (inner wall surface and bottom surface) of a via hole or contact hole having a predetermined aspect ratio. As a film forming apparatus to be used, for example, a sputtering apparatus is known from Patent Document 1. This includes a vacuum chamber in which a substrate to be processed and a target are arranged to face each other, a sputtering gas is introduced into the vacuum chamber, power is applied to the target, and plasma is formed between the substrate and the target. A Cu film is formed by adhering and depositing sputtered particles (Cu radicals or Cu ions) sputtered on the substrate.

近年の半導体デバイスの更なる高集積化や微細化に伴い、Ｃｕ膜が成膜されるホールにはアスペクト比が３以上である高アスペクト比のものがある。高アスペクト比のホールの内面にＣｕ膜を成膜する場合、基板のエッジ部ではターゲット中央部から飛散したスパッタ粒子が斜入射し、エッジ部のホール内面にカバレッジ（被覆性）よく成膜することができない。上記従来例のものでは、基板とターゲットとの間に、スパッタ粒子の基板への入射角度を所定範囲の角度に規制する複数の透孔を有する規制板を配置し、エッジ部でのスパッタ粒子の斜入射を防止している。   Along with the further high integration and miniaturization of semiconductor devices in recent years, some holes having a high aspect ratio with an aspect ratio of 3 or more are formed in Cu holes. When forming a Cu film on the inner surface of a hole with a high aspect ratio, sputter particles scattered from the center of the target are obliquely incident on the edge of the substrate, and the film is formed with good coverage (coverage) on the hole inner surface of the edge. I can't. In the above-mentioned conventional example, a regulating plate having a plurality of through holes for regulating the incident angle of the sputtered particles to the substrate within a predetermined range is arranged between the substrate and the target, and the sputtered particles at the edge portion are arranged. Oblique incidence is prevented.

しかしながら、上記従来例のように規制板を配置すると、成膜レートが著しく低下することが判明した。そこで、本願発明の発明者は、鋭意研究を重ね、規制板がアース電位に保持されていると、規制板でＣｕイオンが失活し、Ｃｕイオンの指向性が低下することに起因するとの知見を得た。   However, it has been found that when the regulating plate is arranged as in the above-described conventional example, the film formation rate is significantly reduced. Therefore, the inventors of the present invention have made extensive studies and found that if the regulation plate is held at the ground potential, Cu ions are deactivated by the regulation plate and the directivity of Cu ions is reduced. Got.

特公平６−６０３９１号公報Japanese Patent Publication No. 6-60391

本発明は、上記点に鑑み、基板エッジ部へのスパッタ粒子の斜入射を防止するという機能を損なうことなく、規制板におけるイオンの失活を抑制してイオンの指向性を向上させることができるスパッタリング装置を提供することをその課題とするものである。   In view of the above points, the present invention can improve ion directivity by suppressing ion deactivation in the regulating plate without impairing the function of preventing the oblique incidence of sputtered particles on the substrate edge. It is an object of the present invention to provide a sputtering apparatus.

上記課題を解決するために、処理すべき基板とターゲットとが対向配置される真空チャンバを備え、真空チャンバ内にスパッタガスを導入し、ターゲットに電力投入して基板とターゲットとの間にプラズマを形成し、ターゲットをスパッタリングして飛散したスパッタ粒子を基板に付着、堆積させる本発明のスパッタリング装置は、基板とターゲットとの間に、スパッタ粒子の基板への入射角度を所定範囲の角度に規制する複数の透孔を有する規制板を備え、ターゲットと規制板との間に、規制板の透孔の孔軸と同じ孔軸を有する透孔が複数開設された電極板と、電極板の電位を規制板の電位よりも高く保持する保持手段とを更に備えることを特徴とする。   In order to solve the above problems, a vacuum chamber is provided in which a substrate to be processed and a target are arranged to face each other, a sputtering gas is introduced into the vacuum chamber, power is supplied to the target, and plasma is generated between the substrate and the target. The sputtering apparatus according to the present invention, which forms and sputters a target to deposit and deposits sputtered particles on a substrate, regulates the incident angle of the sputtered particles to the substrate within a predetermined range between the substrate and the target. A regulation plate having a plurality of through holes, an electrode plate having a plurality of through holes having the same hole axis as the through hole of the restriction plate between the target and the regulation plate, and the potential of the electrode plate It further comprises holding means for holding higher than the potential of the regulating plate.

本発明によれば、ターゲットと規制板との間に配置した電極板の電位を規制板の電位よりも高く保持することで、電極板と規制板との間に電位差が形成される。この電位差により、ターゲットから飛散したスパッタ粒子を構成するイオンが加速され、規制板の透孔を通過してホール内面を含む基板表面に到達するため、イオンが規制板において失活することを抑制でき、イオンの指向性を向上させることができる。しかも、電極板と規制板に夫々開設された透孔を通過したスパッタ粒子は、基板への入射角度が所定の角度範囲に規制されるため、基板エッジ部へのスパッタ粒子の斜入射を防止できるという機能は損なわれない。   According to the present invention, a potential difference is formed between the electrode plate and the regulating plate by holding the potential of the electrode plate arranged between the target and the regulating plate higher than the potential of the regulating plate. Due to this potential difference, the ions constituting the sputtered particles scattered from the target are accelerated and pass through the through holes of the regulating plate to reach the substrate surface including the inner surface of the hole, so that the ions can be prevented from being deactivated in the regulating plate. , Ion directivity can be improved. In addition, since the incident angles of the sputtered particles that have passed through the through holes provided in the electrode plate and the restricting plate are restricted to a predetermined angle range, it is possible to prevent the oblique incidence of the sputtered particles on the substrate edge portion. This function is not impaired.

本発明において、前記電極板の板厚は、前記規制板の板厚よりも薄いことが好ましく、前記電極板の板厚は５〜１５ｍｍの範囲内であることが好ましい。また、前記保持手段は、電極板と規制板との間の電位差が７０Ｖ以上１６０Ｖ以下になるように前記電極板の電位を保持することが好ましい。   In the present invention, the plate thickness of the electrode plate is preferably smaller than the plate thickness of the regulating plate, and the plate thickness of the electrode plate is preferably in the range of 5 to 15 mm. The holding means preferably holds the potential of the electrode plate so that a potential difference between the electrode plate and the regulating plate is 70V or more and 160V or less.

本発明の実施形態のスパッタリング装置を示す模式的断面図。The typical sectional view showing the sputtering device of the embodiment of the present invention. 本発明の実験結果を示すグラフ。The graph which shows the experimental result of this invention. 本発明の実験結果を示すグラフ。The graph which shows the experimental result of this invention.

以下、図面を参照して、処理すべき基板Ｗを、シリコンウェハの表面にシリコン酸化物膜を所定の膜厚で形成し、このシリコン酸化物膜にアスペクト比が３以上である微細なホールを形成したものとし、このホールの内面にＣｕ膜を形成する場合に用いられるものを例として、本発明の実施形態のスパッタリング装置について説明する。   Hereinafter, referring to the drawings, a substrate W to be processed is formed with a silicon oxide film having a predetermined thickness on the surface of a silicon wafer, and fine holes having an aspect ratio of 3 or more are formed in the silicon oxide film. The sputtering apparatus according to the embodiment of the present invention will be described by taking as an example what is formed and used when forming a Cu film on the inner surface of the hole.

図１を参照して、ＳＭは、マグネトロン方式のスパッタ装置であり、このスパッタ装置ＳＭは、処理室１ａを画成する真空チャンバ１を備える。真空チャンバ１の天井部にはカソードユニットＣが取付けられている。以下においては、図１中、真空チャンバ１の天井部側を向く方向を「上」とし、その底部側を向く方向を「下」として説明する。   Referring to FIG. 1, SM is a magnetron type sputtering apparatus, and this sputtering apparatus SM includes a vacuum chamber 1 that defines a processing chamber 1a. A cathode unit C is attached to the ceiling of the vacuum chamber 1. In the following description, in FIG. 1, the direction facing the ceiling portion side of the vacuum chamber 1 is referred to as “up” and the direction facing the bottom portion side is described as “down”.

カソードユニットＣは、ターゲットアッセンブリ２と、ターゲットアッセンブリ２の上方に配置された磁石ユニット３とから構成されている。ターゲットアッセンブリ２は、基板Ｗの輪郭に応じて、公知の方法で平面視円形の板状に形成されたＣｕ製のターゲット２１と、ターゲット２１の上面にインジウム等のボンディング材（図示省略）を介して接合されるバッキングプレート２２とで構成され、スパッタによる成膜中、バッキングプレート２２の内部に冷媒（冷却水）を流すことでターゲット２１を冷却できるようになっている。ターゲット２１を装着した状態でバッキングプレート２２下面の周縁部が、絶縁体Ｉ１を介して真空チャンバ１の上部に取り付けられる。ターゲット２１にはＤＣ電源や高周波電源等のスパッタ電源Ｅ１からの出力が接続され、成膜時、ターゲット２１に負の電位を持った電力が投入される。   The cathode unit C includes a target assembly 2 and a magnet unit 3 disposed above the target assembly 2. The target assembly 2 includes a Cu target 21 formed in a circular plate shape in a plan view according to a contour of the substrate W and a bonding material (not shown) such as indium on the upper surface of the target 21. The target 21 can be cooled by flowing a coolant (cooling water) through the inside of the backing plate 22 during film formation by sputtering. With the target 21 mounted, the peripheral edge of the lower surface of the backing plate 22 is attached to the upper portion of the vacuum chamber 1 via the insulator I1. An output from a sputtering power source E1 such as a DC power source or a high frequency power source is connected to the target 21, and power having a negative potential is applied to the target 21 during film formation.

磁石ユニット３は、ターゲット２１の下面をスパッタ面２１ａとし、スパッタ面２１ａの下方空間に磁場を発生させ、スパッタ時にスパッタ面２１ａの下方で電離した電子等を捕捉してターゲット２１から飛散したスパッタ粒子を効率よくイオン化する公知の構造を有するものであり、ここでは詳細な説明を省略する。   The magnet unit 3 uses the lower surface of the target 21 as a sputter surface 21 a, generates a magnetic field in the space below the sputter surface 21 a, captures electrons etc. ionized below the sputter surface 21 a during sputtering, and sputtered particles scattered from the target 21. Has a well-known structure for efficiently ionizing, and detailed description thereof is omitted here.

真空チャンバ１内には、ターゲット２の周囲を覆って下方に延びる筒状のシールド部材４が配置され、スパッタ粒子のイオンが基板Ｗへと放出されることをアシストしている。   In the vacuum chamber 1, a cylindrical shield member 4 that covers the periphery of the target 2 and extends downward is arranged to assist the release of ions of sputtered particles to the substrate W.

真空チャンバ１の底部には、ターゲット２１のスパッタ面２１ａに対向させてステージ５が配置され、基板Ｗがその成膜面を上側にして位置決め保持されるようにしている。ステージ５は高周波電源Ｅ２に接続され、ステージ５ひいては基板Ｗにバイアス電位が印加され、スパッタ粒子のイオンを基板Ｗに引き込む役割を果たす。尚、ターゲット２１と基板Ｗとの間の間隔は、生産性や散乱回数等を考慮して４５〜８００ｍｍの範囲に設定することができる。   A stage 5 is disposed at the bottom of the vacuum chamber 1 so as to face the sputtering surface 21a of the target 21, and the substrate W is positioned and held with its film-forming surface facing upward. The stage 5 is connected to a high-frequency power source E2, and a bias potential is applied to the stage 5 and thus the substrate W, so that ions of sputtered particles are attracted to the substrate W. In addition, the space | interval between the target 21 and the board | substrate W can be set to the range of 45-800 mm in consideration of productivity, the frequency | count of scattering, etc.

真空チャンバ１の底部には、ターボ分子ポンプやロータリーポンプなどからなる真空排気手段Ｐに通じる排気管１１が接続されている。また、真空チャンバ１の側壁には、アルゴン等の希ガスたるスパッタガスを導入するガス管１２が接続され、ガス管１２にはマスフローコントローラ１２ａが介設され、図示省略のガス源に連通している。これにより、流量制御されたスパッタガスが、後述する真空排気手段Ｐにより一定の排気速度で真空引きされている処理室１ａ内に導入でき、成膜中、処理室１ａの圧力（全圧）が略一定に保持されるようにしている。   Connected to the bottom of the vacuum chamber 1 is an exhaust pipe 11 communicating with a vacuum exhaust means P such as a turbo molecular pump or a rotary pump. A gas pipe 12 for introducing a sputtering gas which is a rare gas such as argon is connected to the side wall of the vacuum chamber 1, and a mass flow controller 12a is interposed in the gas pipe 12 so as to communicate with a gas source (not shown). Yes. Thereby, the sputter gas whose flow rate is controlled can be introduced into the processing chamber 1a which is evacuated at a constant pumping speed by the vacuum evacuation means P described later, and the pressure (total pressure) of the processing chamber 1a is increased during film formation. It is kept substantially constant.

また、基板Ｗとターゲット２１との間には、スパッタ粒子の通過を許容する透孔６１が複数開設された規制板６が配置され、スパッタ粒子の基板Ｗへの入射角度を所定の角度範囲に規制し、これにより、基板Ｗのエッジ部へのスパッタ粒子の斜入射を防止している。規制板６の板厚は、３０ｍｍ〜２００ｍｍの範囲に設定することができる。規制板６は、真空チャンバ１の側壁内側に配置された防着板７ａの内面に支持部材６２を介して固定されている。防着板７ａを接地することにより、規制板６は接地電位に保持される。尚、防着板７ａの下方には、他の防着板７ｂ，７ｃが配置されている。   Further, a regulating plate 6 having a plurality of through holes 61 that allow the passage of sputtered particles is disposed between the substrate W and the target 21 so that the incident angle of the sputtered particles on the substrate W falls within a predetermined angle range. Thus, the oblique incidence of the sputtered particles on the edge portion of the substrate W is prevented. The plate | board thickness of the control board 6 can be set to the range of 30 mm-200 mm. The regulating plate 6 is fixed to the inner surface of the deposition preventing plate 7 a disposed inside the side wall of the vacuum chamber 1 via a support member 62. By grounding the deposition preventing plate 7a, the regulating plate 6 is held at the ground potential. In addition, the other adhesion prevention plates 7b and 7c are arrange | positioned under the adhesion prevention plate 7a.

ここで、規制板６を配置することで基板Ｗのエッジ部へのスパッタ粒子の斜入射を防止できるものの、規制板６が接地電位に保持されると、規制板６にてＣｕイオンが失活してＣｕイオンの指向性が低下する。本実施形態では、ターゲット２１と規制板６との間に、規制板６の透孔６１の孔軸６１ａと同じ孔軸８１ａを有する透孔８１が複数開設された電極板８を配置した。電極板８は、シールド部材４の内面に固定され、シールド部材４に直流電源Ｅ３から正の電位を印加することで、電極板８の電位を規制板６の電位よりも高く保持している。直流電源Ｅ３が本発明の「保持手段」を構成する。電極板８と規制板６との間の電位差は、例えば２０Ｖ〜１６０Ｖの範囲に設定することができる。電極板８の板厚は、規制板６の板厚よりも薄くすることが好ましく、例えば、３ｍｍ〜５０ｍｍの範囲に設定することができる。電極板８は、その上面が処理室１ａでプラズマが形成される領域よりも下方に位置するように配置することが好ましい。電極板８と規制板６との間の隙間ｄは、例えば、５ｍｍ〜４５ｍｍの範囲に設定することが好ましく、１０ｍｍ〜２０ｍｍの範囲に設定することがより好ましい。隙間ｄが５ｍｍより短いと規制板６に堆積したＣｕにより、Ｃｕイオンの透過特性の変動が顕著になるという不具合がある一方で、４５ｍｍより長いとＣｕイオンが規制板６で失活するという不具合がある。   Here, although the regulation plate 6 can prevent the oblique incidence of sputtered particles to the edge portion of the substrate W, Cu ions are deactivated by the regulation plate 6 when the regulation plate 6 is held at the ground potential. As a result, the directivity of Cu ions decreases. In the present embodiment, the electrode plate 8 in which a plurality of through holes 81 having the same hole axis 81 a as the hole axis 61 a of the through hole 61 of the restriction plate 6 is provided between the target 21 and the restriction plate 6 is disposed. The electrode plate 8 is fixed to the inner surface of the shield member 4, and the potential of the electrode plate 8 is kept higher than the potential of the regulating plate 6 by applying a positive potential to the shield member 4 from the DC power source E <b> 3. The DC power supply E3 constitutes the “holding means” of the present invention. The potential difference between the electrode plate 8 and the regulating plate 6 can be set in the range of 20V to 160V, for example. The plate thickness of the electrode plate 8 is preferably thinner than the plate thickness of the regulating plate 6, and can be set in a range of 3 mm to 50 mm, for example. The electrode plate 8 is preferably arranged so that its upper surface is located below the region where plasma is formed in the processing chamber 1a. For example, the gap d between the electrode plate 8 and the regulating plate 6 is preferably set in the range of 5 mm to 45 mm, and more preferably set in the range of 10 mm to 20 mm. When the gap d is shorter than 5 mm, there is a problem that the Cu ion permeation characteristics fluctuate significantly due to Cu deposited on the regulating plate 6, while when the gap d is longer than 45 mm, the Cu ion is deactivated by the regulating plate 6. There is.

尚、透孔６１，８１の平面視の形状は、任意であり、例えば円で構成したり、また六角形で構成してハニカム構造とすることができる。また、規制板６は、その中央部の透孔６１の深さがエッジ部の透孔６１の深さよりも深くなるように構成して、成膜レートの面内分布を向上させてもよい。   In addition, the shape of the through holes 61 and 81 in a plan view is arbitrary, and may be configured as, for example, a circle or a hexagonal shape to form a honeycomb structure. Further, the regulating plate 6 may be configured such that the depth of the through hole 61 in the center portion is deeper than the depth of the through hole 61 in the edge portion, thereby improving the in-plane distribution of the film formation rate.

上記スパッタリング装置ＳＭは、特に図示しないが、マイクロコンピュータやシーケンサ等を備えた公知の制御手段９を有し、制御手段９により電源Ｅ１，Ｅ２，Ｅ３の稼働、マスフローコントローラ１２ａの稼働や真空排気手段Ｐの稼働等を統括管理するようになっている。   Although not particularly shown, the sputtering apparatus SM has known control means 9 including a microcomputer, a sequencer, and the like. The control means 9 operates the power supplies E1, E2, E3, the mass flow controller 12a, and the vacuum exhaust means. It is designed to manage the operation of P.

次に、処理すべき基板Ｗをアスペクト比が３以上のホールが形成されたシリコンウェハとし、上記スパッタリング装置ＳＭを用いて上記ホールの内面を含む基板Ｗ表面にＣｕ膜を成膜する場合を例に成膜方法について説明する。   Next, the substrate W to be processed is a silicon wafer in which holes having an aspect ratio of 3 or more are formed, and a Cu film is formed on the surface of the substrate W including the inner surfaces of the holes by using the sputtering apparatus SM. Next, a film forming method will be described.

先ず、ターゲット２１が組み付けられた真空チャンバ１内のステージ５に基板Ｗをセットし、その後、真空排気手段Ｐを作動させて処理室１ａ内を所定の真空度（例えば、１×１０−５Ｐａ）まで真空引きする。処理室１ａ内が所定圧力に達すると、マスフローコントローラ１２ａを制御してアルゴンガスを所定の流量で導入する。アルゴンガスの流量は０〜２０ｓｃｃｍの範囲に設定することができる（このとき、処理室１ａの圧力は約１×１０−５Ｐａ〜０．４Ｐａの範囲となる）。これと併せて、スパッタ電源Ｅ１からターゲット２１に負の電位を持つ直流電力を例えば１０〜３０ｋＷ投入して処理室１ａ内にプラズマを形成する。これにより、ターゲット２１のスパッタ面２１ａをスパッタし、飛散したスパッタ粒子が基板Ｗに向かって飛行する。 First, the substrate W is set on the stage 5 in the vacuum chamber 1 in which the target 21 is assembled, and then the vacuum exhaust means P is operated to move the inside of the processing chamber 1a to a predetermined degree of vacuum (for example, 1 × 10 −5 Pa). ) To a vacuum. When the inside of the processing chamber 1a reaches a predetermined pressure, the mass flow controller 12a is controlled to introduce argon gas at a predetermined flow rate. The flow rate of the argon gas can be set in the range of 0 to 20 sccm (at this time, the pressure in the processing chamber 1a is in the range of about 1 × 10 −5 Pa to 0.4 Pa). At the same time, for example, 10 to 30 kW of DC power having a negative potential is applied to the target 21 from the sputtering power source E1 to form plasma in the processing chamber 1a. As a result, the sputtering surface 21 a of the target 21 is sputtered and the sputtered particles scattered fly toward the substrate W.

本実施形態によれば、電極板８の電位を規制板６の電位よりも高く保持することで、両者の間に電位差が形成され、この電位差によりターゲット２１からのスパッタ粒子を構成するＣｕイオンが加速され、規制板６の透孔６１を通過してホール内面を含む基板Ｗ表面に到達する。このため、Ｃｕイオンが規制板６において失活することを抑制でき、Ｃｕイオンの指向性を向上させることができる。しかも、電極板８の透孔８１と規制板６の透孔６１とを通過したスパッタ粒子（Ｃｕ粒子）は基板Ｗへの入射角度が所定の角度範囲に規制されるため、基板エッジ部への斜入射を防止できるという機能は損なわれない。   According to the present embodiment, by holding the potential of the electrode plate 8 higher than the potential of the regulating plate 6, a potential difference is formed between them, and Cu ions constituting the sputtered particles from the target 21 are caused by this potential difference. It is accelerated and passes through the through hole 61 of the regulating plate 6 and reaches the surface of the substrate W including the inner surface of the hole. For this reason, it can suppress that Cu ion deactivates in the control board 6, and can improve the directivity of Cu ion. Moreover, since the incident angle of the sputtered particles (Cu particles) that have passed through the through holes 81 of the electrode plate 8 and the through holes 61 of the regulating plate 6 to the substrate W is regulated within a predetermined angle range, The function of preventing oblique incidence is not impaired.

以上、本発明の実施形態について説明したが、本発明は上記に限定されるものではない。上記実施形態においては、Ｃｕターゲット２１をスパッタしてＣｕ膜を成膜する場合について説明したが、スパッタ粒子にイオンが多く含まれるようなターゲット、例えば、Ｔｉ、Ａｌ、Ｔａ、Ａｇ、Ｃｒ、Ｍｏ及びＷから選択される金属または合金からなるターゲットを用いる場合にも本発明を適用することができる。   As mentioned above, although embodiment of this invention was described, this invention is not limited above. In the above-described embodiment, the case where the Cu target 21 is sputtered to form the Cu film has been described. The present invention can also be applied when using a target made of a metal or alloy selected from W and W.

次に、上記効果を確認するために、上記スパッタリング装置ＳＭを用いて次の実験を行った。本実験では、上記スパッタリング装置ＳＭを用いてＣｕ膜をスパッタリング法により成膜する場合において、規制板６におけるＣｕイオンの透過率と、規制板６の透孔６１からのＣｕイオンの吹き出し角度（発散角、つまり、基板Ｗへの入射角度）との電位差依存性をシミュレーションにより求めた。ここで、規制板６の板厚を４５ｍｍ、電極板８の板厚を１５ｍｍとし、両者の隙間ｄを１５ｍｍとし、透孔６１，８１の径を１３ｍｍとし、アルゴンガスの流量を２０ｓｃｃｍ（このときの処理室１ａ内の圧力は０．４Ｐａ）、ターゲット２１に投入する直流電力を２０ｋＷ、基板Ｗに投入するバイアス電力を１３．５６ＭＨｚ、４００Ｗに設定した。そして、規制板６と電極板８との間の電位差を４０〜１６０Ｖで変化させて求めたＣｕイオンの透過率及び吹き出し角度を図２に示す。これによれば、電位差を７０Ｖ〜１００Ｖ程度に設定すれば、７５％以上の透過率と１°前後の吹き出し角度を実現できることが判った。電極板８の板厚を１５ｍｍから５ｍｍに変更した点を除き、上記と同様にシミュレーションを行った結果を図３に示す。これによれば、電位差を７０Ｖ以上に設定すれば１００％の透過率を実現できる、すなわち、規制板６でのＣｕイオンの失活を防止できることが判った。また、電位差を７０〜１６０Ｖに設定すれば、２°以下の吹き出し角度を実現でき、９０Ｖ〜１１０Ｖに設定すれば、０．５°以下の吹き出し角度を実現できることが判った。   Next, in order to confirm the effect, the following experiment was performed using the sputtering apparatus SM. In this experiment, when the Cu film is formed by the sputtering method using the sputtering apparatus SM, the transmittance of Cu ions in the regulation plate 6 and the blowing angle of the Cu ions from the through holes 61 of the regulation plate 6 (divergence). The potential difference dependency with respect to the angle, that is, the incident angle to the substrate W) was obtained by simulation. Here, the plate thickness of the regulating plate 6 is 45 mm, the plate thickness of the electrode plate 8 is 15 mm, the gap d between them is 15 mm, the diameter of the through holes 61 and 81 is 13 mm, and the flow rate of argon gas is 20 sccm (at this time) The pressure in the processing chamber 1a was 0.4 Pa), the DC power input to the target 21 was set to 20 kW, and the bias power input to the substrate W was set to 13.56 MHz and 400 W. And the transmittance | permeability and blowing angle of Cu ion calculated | required by changing the electric potential difference between the control board 6 and the electrode plate 8 at 40-160V are shown in FIG. According to this, it was found that if the potential difference is set to about 70V to 100V, a transmittance of 75% or more and a blowing angle of about 1 ° can be realized. FIG. 3 shows the results of simulation similar to the above except that the thickness of the electrode plate 8 was changed from 15 mm to 5 mm. According to this, it was found that if the potential difference is set to 70 V or more, 100% transmittance can be realized, that is, Cu ion deactivation in the regulation plate 6 can be prevented. It was also found that if the potential difference is set to 70 to 160V, a blowing angle of 2 ° or less can be realized, and if the potential difference is set to 90V to 110V, a blowing angle of 0.5 ° or less can be realized.

ＳＭ…スパッタリング装置、Ｗ…基板、１…真空チャンバ、６…規制板、６１…規制板６の透孔、６１ａ…透孔６１の孔軸、８…電極板、８１…電極板８の透孔、８１ａ…透孔８１の孔軸、Ｅ３…保持手段。   SM ... Sputtering apparatus, W ... Substrate, 1 ... Vacuum chamber, 6 ... Restriction plate, 61 ... Through hole in restriction plate 6, 61a ... Hole axis of through hole 61, 8 ... Electrode plate, 81 ... Through hole in electrode plate 8 , 81a: hole axis of the through hole 81, E3: holding means.

Claims (4)

処理すべき基板とターゲットとが対向配置される真空チャンバを備え、真空チャンバ内にスパッタガスを導入し、ターゲットに電力投入して基板とターゲットとの間にプラズマを形成し、ターゲットをスパッタリングして飛散したスパッタ粒子を基板に付着、堆積させるスパッタリング装置であって、
基板とターゲットとの間に、スパッタ粒子の基板への入射角度を所定の角度範囲に規制する複数の透孔を有する規制板を備えるものにおいて、
ターゲットと規制板との間に、規制板の透孔の孔軸と同じ孔軸を有する透孔が複数開設された電極板と、電極板の電位を規制板の電位よりも高く保持する保持手段とを更に備えることを特徴とするスパッタリング装置。 A vacuum chamber is provided in which a substrate to be processed and a target are arranged to face each other, a sputtering gas is introduced into the vacuum chamber, power is supplied to the target, plasma is formed between the substrate and the target, and the target is sputtered. A sputtering apparatus for adhering and depositing scattered sputtered particles on a substrate,
In what comprises a regulating plate having a plurality of through holes for regulating the incident angle of the sputtered particles to the substrate within a predetermined angle range between the substrate and the target,
An electrode plate having a plurality of through holes having the same hole axis as the hole axis of the through hole of the restriction plate between the target and the restriction plate, and a holding means for holding the potential of the electrode plate higher than the potential of the restriction plate And a sputtering apparatus. 前記電極板の板厚は、前記規制板の板厚よりも薄いことを特徴とする請求項１記載のスパッタリング装置。   The sputtering apparatus according to claim 1, wherein a thickness of the electrode plate is thinner than a thickness of the regulation plate. 前記電極板の板厚は５〜１５ｍｍの範囲内であることを特徴とする請求項１または２記載のスパッタリング装置。   The sputtering apparatus according to claim 1 or 2, wherein a thickness of the electrode plate is in a range of 5 to 15 mm. 前記保持手段は、電極板と規制板との間の電位差が７０Ｖ以上１６０Ｖ以下になるように前記電極板の電位を保持することを特徴とする請求項１〜３のいずれか１項記載のスパッタリング装置。
4. The sputtering according to claim 1, wherein the holding means holds the potential of the electrode plate so that a potential difference between the electrode plate and the regulating plate is 70 V or more and 160 V or less. apparatus.
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