CN202502994U - Igbt module - Google Patents
Igbt module Download PDFInfo
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- CN202502994U CN202502994U CN2012200475685U CN201220047568U CN202502994U CN 202502994 U CN202502994 U CN 202502994U CN 2012200475685 U CN2012200475685 U CN 2012200475685U CN 201220047568 U CN201220047568 U CN 201220047568U CN 202502994 U CN202502994 U CN 202502994U
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- liner plate
- busbar
- igbt
- chip
- chips
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Abstract
The embodiment of the utility model discloses an IGBT module. The IGBT module comprises a liner plate which is in a cross-shaped structure, the liner plate being provided with four wings opposite to each other in pairs; a group of FRD chips, two groups of IGBT chips and a busbar which are arranged on the liner plate; and the one group of FRD chips, the two groups of IGBT chips and the busbar are respectively located on different wings of the liner plate, the two group of IGBT chips being respectively located two opposite wings of the cross-shaped liner plate, the FRD chips and the busbar being respectively located on the other two opposite wings. According to the embodiment of the utility model, the two groups of IGBT chips are symmetrically distributed on the two opposite wings of the cross-shaped liner plate, and the FRD chips and the busbar are respectively located on the other two opposite wings, as a result, the busbar is separated far from each chip, namely, none of chips is arranged in a magnetic flow compact district below a turning of the busbar, thereby, avoiding interference of stray inductance on the IGBT chips or the FRD chips, ensuring stable operation of the entire IGBT module.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, more particularly, relates to a kind of IGBT module.
Background technology
Mostly the lining plate structure that present various power-type IGBT modules both domestic and external are adopted is rectangle, is distributed with IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) chip, FRD (Fast Recovery Diode on the liner plate; Fast recovery diode) chip and busbar etc., in the prior art on the liner plate arrangement mode of each chip as depicted in figs. 1 and 2, be example with two groups of igbt chips and one group of FRD chip; Have two igbt chips in every group of igbt chip; Same, also having two FRD chips in one group of FRD chip, its arrangement mode does; Bisector with the long limit of rectangle liner plate is an axle; Four igbt chips and two FRD chips all are evenly distributed in the both sides of axis, and near the fringe region of liner plate, promptly respectively there is two igbt chips 12 and a FRD chip 13 of arranging successively the both sides of rectangle liner plate 11; Wherein, busbar 14 is drawn from a certain position of the zone line of two row's chips.
The advantage of this structure is simple in structure, compact, but finds that in actual use IGBT module of the prior art is in operation and often has the shortcoming of poor stability.
The utility model content
The utility model embodiment provides a kind of IGBT module, and the arrangement mode of structure, busbar and each chip through improving liner plate has reduced the interference of stray inductance to igbt chip or FRD chip, thereby guaranteed the stable operation of entire I GBT module.
For realizing above-mentioned purpose, the utility model embodiment provides following technical scheme:
A kind of IGBT module comprises:
Liner plate, said liner plate are decussate texture, and said liner plate has four wings facing each other;
Be positioned at one group of FRD chip on the said liner plate, two groups of igbt chips and busbar, said busbar comprises emitter busbar and collector electrode busbar;
Wherein, said one group of FRD chip, two groups of igbt chips and busbar lay respectively on the different wings of said liner plate, and said two groups of igbt chips lay respectively on the relative both wings of cross liner plate, and said FRD chip and busbar lay respectively on the relative both wings of residue.
Preferably, said two groups of igbt chips are axle with the axis of said one group of FRD chip, symmetry arrangement on the both wings of said cross liner plate.
Preferably, the pad of said emitter busbar and collector electrode busbar is positioned at the marginal position of said cross liner plate, and the magnetic flux density concentrated area of below, busbar turning is away from said FRD chip and igbt chip.
Preferably, this IGBT module also comprises, is positioned at the Chip-R and the grid emitter-base bandgap grading weld zone of said cross liner plate central area.
Preferably; The emitter of igbt chip described in this IGBT module is pooled to the emitter exit through the positive copper metal layer that covers of said liner plate; Collector electrode is pooled to collector terminal through the positive copper metal layer that covers in the said liner plate back side; Said emitter exit and said emitter busbar are electrical connected, and said collector terminal and said collector electrode busbar are electrical connected.
Preferably, the front and back of said liner plate all is coated with metal level, and said metal level is for covering copper layer or alclad.
Preferably, comprise 2 igbt chips in every group of igbt chip.
Preferably, comprise a FRD chip in said one group of FRD chip.
Preferably, comprise two FRD chips in said one group of FRD chip.
Compared with prior art, technique scheme has the following advantages:
Liner plate in the IGBT module that the utility model embodiment provides is designed to decussate texture; With the relative both wings that are distributed in the cross liner plate of two groups of igbt chips symmetry, and FRD chip and busbar be arranged at respectively remain on the relative both wings, so that busbar is away from each chip; Be in the magnetic flux close quarters of below, busbar turning; Any chip is not set, thereby has avoided the interference of stray inductance, guaranteed the stable operation of entire I GBT module igbt chip or FRD chip.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and the advantage of the utility model will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating the purport of the utility model by actual size equal proportion convergent-divergent.
Fig. 1 and Fig. 2 are the arrangement mode sketch map of each chip on the liner plate in the prior art;
Fig. 3 is the right view of IGBT module in the prior art;
Fig. 4 is the structural representation of the disclosed IGBT module of the utility model embodiment;
Fig. 5 is the disclosed IGBT module of a utility model embodiment right view;
Fig. 6 is the structural representation of disclosed another IGBT module of the utility model embodiment;
Fig. 7 is the detailed structure sketch map of the disclosed a kind of IGBT module of the utility model embodiment.
Embodiment
Said as background technology, the operation stability of the IGBT module of prior art is poor, and the inventor discovers that the reason that this problem occurs is the shape of liner plate and the irrational distribution of busbar and chip, and concrete reason is following:
Referring to shown in Figure 3, Fig. 3 is the right view of the IGBT module among Fig. 1 or Fig. 2, because busbar has carried principal current; This electric current can produce magnetic field around busbar, magnetic field concentrates on the below at busbar turning mostly, zone shown in label A among Fig. 3; Promptly very big in the lower zone A at busbar turning ambient magnetic flux density; When the principal current in the busbar has small variation, will in the circuit of magnetic flux compact district, produce inductance, promptly so-called stray inductance; This stray inductance can produce and disturbs being positioned near the magnetic flux central area igbt chip or FRD chip, thereby influences the stable operation of entire I GBT module.
It more than is the application's core concept; To combine the accompanying drawing among the utility model embodiment below, the technical scheme among the utility model embodiment carried out clear, intactly description, obviously; Described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
A lot of details have been set forth in the following description so that make much of the utility model; But the utility model can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model does not receive the restriction of following disclosed specific embodiment.
Secondly, the utility model combines sketch map to be described in detail, when the utility model embodiment is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the utility model protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
The utility model embodiment provides a kind of IGBT module, and its structure chart is as shown in Figure 4, and this IGBT module comprises:
Be positioned at the one group of FRD chip 23 on the said liner plate, two groups of igbt chip 22a and 22b and busbars 24, said busbar 24 comprises emitter busbar 24a and collector electrode busbar 24b;
Wherein, Said one group of FRD chip 23, two groups of igbt chip 22a lay respectively on the different wings of said liner plate 21 with 22b and busbar 24; Said two groups of igbt chip 22a and 22b lay respectively on the relative both wings of cross liner plate; Said FRD chip 23 lays respectively on the relative both wings of residue with busbar 24; That is to say that FRD chip 23 is positioned on the wherein wing of cross liner plate 21 residue both wings, said emitter busbar 24a and collector electrode busbar 24b are arranged side by side on last wing relative with said FRD chip 23 of said cross liner plate 21.
With the situation of arranging shown in Figure 4 is example, and two groups of igbt chip 22a and 22b lay respectively on first wing 21a and the three wings 21c, and FRD chip 23 can be positioned on second wing 21b, and emitter busbar 24a and collector electrode busbar 24b are arranged side by side on the 4th wing 21d.Certainly, busbar and each chip place wing can vary, but its basic arrangement mode is constant, repeats no more here.
In order to guarantee the symmetrical distribution of igbt chip; Two groups of igbt chip 22a described in the present embodiment and 22b are axle with the axis of said one group of FRD chip 23; Symmetry arrangement on the both wings of said cross liner plate 21, for instance, if each wing of cross liner plate is with respect to the center symmetry of this liner plate; The shape size etc. that is each wing is identical, then the edge of two groups of igbt chip 22a and 22b and separately the distance between the edge of liner plate one wing at place be essentially identical.
Simultaneously, in order to make on the liner plate each component arrangement symmetry fully, said emitter busbar 24a is also identical with the distance of the axis of FRD chip 23 with collector electrode busbar 24b, and said one group of FRD chip 23 also is to be positioned at its medium position that belongs to the wing.
In addition; Need to prove; The pad of busbar 24a of emitter described in the present embodiment and collector electrode busbar 24b is positioned at the marginal position of said cross liner plate 21, thereby the magnetic flux density concentrated area that can further make busbar turning below is away from said FRD chip and igbt chip.
As shown in Figure 5; Be the right view of IGBT module shown in Figure 4, also can find out the magnetic flux density concentrated area from the side of this IGBT module; It is label A peripheral region; Any chip is not set, thereby has reduced the interference of stray inductance to greatest extent, thereby ensured the stable operation of IGBT module chip.
It will be understood by those skilled in the art that the setting according to conventional IGBT module, comprise 2 igbt chips in every group of igbt chip, certainly, can also be other even number, mainly the needs according to the IGBT module are provided with.
In addition, can comprise a FRD chip in one group of FRD chip in the present embodiment, also can comprise two FRD chips; IGBT module among Fig. 4 is to comprise that with one group of FRD chip two FRD chips are the explanation that example is carried out, and in addition, the IGBT module shown in Fig. 6 then is to comprise that with one group of FRD chip a FRD chip is an example; If the words that technical conditions allow; Only use FRD chip to replace two FRD chips in the traditional structure, it is compact more that chip on the liner plate is arranged, in this case; As long as guarantee that the relative both wings size shape of cross liner plate is basic identical, the size of the FRD chip and the busbar place wing can be dwindled accordingly.
In addition, the utility model embodiment also shows a kind of detailed structure of this IGBT module, and is as shown in Figure 7, and this IGBT module also comprises, is positioned at the Chip-R 25 and grid emitter-base bandgap grading weld zone 26 of said cross liner plate 21 central areas.
Wherein, The emitter of igbt chip 22 described in this IGBT module is pooled to the emitter exit through said liner plate 21 positive metal level (not shown)s; Collector electrode is pooled to collector terminal through said liner plate 21 positive metal levels; Said emitter exit links to each other with the electrical 24a of said emitter busbar, and said collector terminal and said collector electrode busbar 24b are electrical connected.
That is to say; After the emitter of igbt chip 22 is pooled to the emitter exit; Through lead-in wire the emitter exit is linked to each other with emitter busbar 24a, link to each other with external circuit through emitter busbar 24a, the connected mode of collector electrode is similar; Above-mentioned connected mode mainly is to be electrically connected through the lead-in wire on the metal level 27, and said emitter exit and collector terminal all are positioned at said grid emitter-base bandgap grading weld zone 26.
Need to prove that the front and back of said liner plate all is coated with metal level, the positive metal level of liner plate is participated in conduction; The metal level at the liner plate back side then only is used for welding; Do not participate in conduction, wherein, said metal level can be for covering the copper layer; Also can be alclad, perhaps other metal also can.
It will be appreciated by those skilled in the art that; Lead-in wire connected mode among Fig. 7 just is used for explaining the annexation of various piece on the liner plate; Do not represent actual circuit design, and said Chip-R and grid emitter-base bandgap grading weld zone can be arranged on also on the optional position of cross liner plate central area; As long as the connected mode of corresponding conversion lead-in wire only is the explanation that example is carried out with the central area in the present embodiment.
The above embodiment only is the preferred embodiment of the utility model, is not the utility model is done any pro forma restriction.
Though the utility model discloses as above with preferred embodiment, yet be not in order to limit the utility model.Any those of ordinary skill in the art; Do not breaking away under the utility model technical scheme scope situation; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to the utility model technical scheme, or are revised as the equivalent embodiment that is equal to change.Therefore, every content that does not break away from the utility model technical scheme, all still belongs in the scope of the utility model technical scheme protection any simple modification, equivalent variations and modification that above embodiment did according to the technical spirit of the utility model.
Claims (9)
1. an IGBT module is characterized in that, comprising:
Liner plate, said liner plate are decussate texture, and said liner plate has four wings facing each other;
Be positioned at one group of FRD chip on the said liner plate, two groups of igbt chips and busbar, said busbar comprises emitter busbar and collector electrode busbar;
Wherein, said one group of FRD chip, two groups of igbt chips and busbar lay respectively on the different wings of said liner plate, and said two groups of igbt chips lay respectively on the relative both wings of cross liner plate, and said FRD chip and busbar lay respectively on the relative both wings of residue.
2. IGBT module according to claim 1 is characterized in that, said two groups of igbt chips are axle with the axis of said one group of FRD chip, symmetry arrangement on the both wings of said cross liner plate.
3. IGBT module according to claim 2; It is characterized in that; The pad of said emitter busbar and collector electrode busbar is positioned at the marginal position of said cross liner plate, and the magnetic flux density concentrated area of below, busbar turning is away from said FRD chip and igbt chip.
4. IGBT module according to claim 3 is characterized in that, this IGBT module also comprises, is positioned at the Chip-R and the grid emitter-base bandgap grading weld zone of said cross liner plate central area.
5. IGBT module according to claim 4; It is characterized in that; The emitter of igbt chip described in this IGBT module is pooled to the emitter exit through the positive metal level of said liner plate; Collector electrode is pooled to collector terminal through the positive metal level of said liner plate, and said emitter exit and said emitter busbar are electrical connected, and said collector terminal and said collector electrode busbar are electrical connected.
6. IGBT module according to claim 5 is characterized in that the front and back of said liner plate all is coated with metal level, and said metal level is for covering copper layer or alclad.
7. according to each described IGBT module of claim 1-6, it is characterized in that, comprise 2 igbt chips in every group of igbt chip.
8. according to each described IGBT module of claim 1-6, it is characterized in that, comprise a FRD chip in said one group of FRD chip.
9. according to each described IGBT module of claim 1-6, it is characterized in that, comprise two FRD chips in said one group of FRD chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200475685U CN202502994U (en) | 2012-02-14 | 2012-02-14 | Igbt module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200475685U CN202502994U (en) | 2012-02-14 | 2012-02-14 | Igbt module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202502994U true CN202502994U (en) | 2012-10-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200475685U Expired - Lifetime CN202502994U (en) | 2012-02-14 | 2012-02-14 | Igbt module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202502994U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569276A (en) * | 2012-02-14 | 2012-07-11 | 株洲南车时代电气股份有限公司 | Insulated gate bipolar transistor (IGBT) module |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
-
2012
- 2012-02-14 CN CN2012200475685U patent/CN202502994U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569276A (en) * | 2012-02-14 | 2012-07-11 | 株洲南车时代电气股份有限公司 | Insulated gate bipolar transistor (IGBT) module |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121024 Effective date of abandoning: 20141119 |
|
| RGAV | Abandon patent right to avoid regrant |