CN202564378U - Double gradual-change screen structure of solar cell - Google Patents
Double gradual-change screen structure of solar cell Download PDFInfo
- Publication number
- CN202564378U CN202564378U CN 201220242971 CN201220242971U CN202564378U CN 202564378 U CN202564378 U CN 202564378U CN 201220242971 CN201220242971 CN 201220242971 CN 201220242971 U CN201220242971 U CN 201220242971U CN 202564378 U CN202564378 U CN 202564378U
- Authority
- CN
- China
- Prior art keywords
- grid line
- silicon chip
- grid lines
- time grid
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a double gradual-change screen structure of solar cells. The screen structure comprises a square silicon wafer, the light receiving surface of the silicon wafer is provided with a plurality of main grid lines, a plurality of marginal secondary grid lines and a plurality of central secondary grid lines, wherein the plurality of main grid lines are mutually arranged in parallel, the plurality of marginal secondary grid lines are mutually arranged in parallel, the plurality of central secondary grid lines are mutually arranged in parallel, and the marginal secondary grid lines and the central secondary grid lines are perpendicular to the main grid lines; and the marginal secondary grid lines are arranged in the marginal zones on the light receiving surface of the silicon wafer, the central secondary grid lines are arranged in the central zone on the light receiving surface of the silicon wafer, and the widths of the central secondary grid lines are larger than that of the marginal secondary grid lines. By adopting the structure, the double gradual-change screen structure is simple in structure, easy to realize, can save the cost, and can improve the electric energy conversion efficiency.
Description
Technical field
The utility model relates to the photovoltaic field, specifically is two gradual change half tone structures of solar cell.
Background technology
At present, at the print field of front electrode of solar battery, generally adopt uniform grid line printing mode, promptly whole inferior grid line all above the silicon chip all adopts with a kind of live width.It is big than fringe region that the diffusion air-flow enters into the difficulty of silicon chip central area, and it is higher that therefore the square resistance on the silicon chip of diffusion back often shows as side's resistance of central area, and the resistance of fringe region side is lower.The short wave response in high square resistance zone, center is better, and the charge carrier that is produced is more, but lateral resistance is bigger; Low square resistance zone, edge short wave response is relatively poor, but lateral resistance is less.Therefore, adopt uniform grid line pattern can not mate the uniformity demand of same silicon chip top resistance well, thereby can have influence on the transformation efficiency of electric energy.
The utility model content
The purpose of the utility model is to overcome the deficiency of prior art, and a kind of two gradual change half tone structures that can improve the solar cell of electric energy conversion efficiency are provided.
The purpose of the utility model mainly realizes through following technical scheme: two gradual change half tone structures of solar cell; Comprise square silicon chip; The sensitive surface of said silicon chip is provided with many main grid lines, many edge time grid lines and many center time grid lines, and said many main grid lines laterally arrange each other, and many edge time grid lines laterally arrange each other; Many center time grid line laterally arranges each other, and edge time grid line is connected with all vertical main grid line of center time grid line and with the main grid line; Said edge time grid line is positioned at the fringe region on the silicon chip sensitive surface, and said center time grid line is positioned at the central area on the silicon chip sensitive surface, and the width of center time grid line is greater than the width of edge time grid line.
On the line of demarcation in said silicon chip central area and silicon chip edge zone arbitrarily a bit apart from this near the silicon chip seamed edge between distance between silicon chip seamed edge length 1/4～1/3, and all point equates apart from the minimum distance of silicon chip seamed edge on the regional line of demarcation of silicon chip central area and silicon chip edge.In order to guarantee the conversion efficiency of solar cell, the utility model is limited in the reasonable range the central area and the fringe region of silicon chip, and side's resistance of mensuration also should meet this area requirement, promptly show central area side's resistance height, and the resistance of fringe region side is low.
The width of said edge time grid line is 50～70 μ m, and the width of said center time grid line is 60～90 μ m.The utility model is limited to the width of edge time grid line and center time grid line in the reasonable range, but should satisfy the width of the width of center time grid line greater than edge time grid line all the time.
The quantity of said main grid line is two.The quantity that the utility model preferably is provided with the main grid line is two; Two main grid lines are connected with inferior grid line two ends, the center that is arranged on respectively when specifically being provided with; Be convenient to main grid line and edge time grid line and be connected, and then be convenient to the electric current that the main grid line collects the inferior grid line of edge time grid line and center and compile.
Said edge time grid line and the inferior grid line in center be two horizontal seamed edges of parallel silicon chip all, two vertical seamed edges of said main grid line parallel silicon chip.The utility model with the equal seamed edge of parallel silicon chip of thin grid line and main grid line, so, is convenient to the shaping of grid line, and can be guaranteed that every thin grid line compiles electric current in a reasonable range, is convenient to the collection of electric current when being provided with.
Compared with prior art; The utlity model has following beneficial effect: the utility model is higher to side's resistance that the square resistance on the silicon chip of diffusion back often shows as the central area; And the lower defective of fringe region side's resistance; The width of the utility model center time grid line is set to the width greater than edge time grid line, and the utility model not only can be brought into play the short wave response advantage that the central area high square resistance is brought better through the distribution that the inferior grid line width that changes the silicon chip zones of different comes match party to hinder; Can also reduce the shading area in low square resistance zone, edge; Improve the short circuit current of battery, the width that reduces edge time grid line simultaneously can reduce the slurry consumption, reduces the production cost of solar cell.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
The pairing name of Reference numeral is called in the accompanying drawing: 1, silicon chip, 2, the main grid line, 3, edge time grid line, 4, center time grid line.
Embodiment
Below in conjunction with embodiment and accompanying drawing the utility model is done further to specify, but the execution mode of the utility model is not limited thereto.
Embodiment:
As shown in Figure 1, two gradual change half tone structures of solar cell comprise square silicon chip 1; The sensitive surface of silicon chip 1 is provided with main grid line 2, edge time grid line 3 and center time grid line 4, and wherein, the quantity of main grid line 2, edge time grid line 3 and center time grid line 4 is many; Many main grid line 2 laterally arranges each other; Many edge time grid line 3 laterally arranges each other, and many center time grid lines 4 also laterally arrange each other, and edge time grid line 3 all is connected with main grid line 2 with center time grid line 4.Two horizontal seamed edges of edge time grid line 3 and center time grid line 4 parallel silicon chips 1, two vertical seamed edges of main grid line 2 parallel silicon chips 1, i.e. edge time grid line 3 and the center time all vertical main grid line 2 of grid line 4.
Edge time grid line 3 is positioned at the fringe region on silicon chip 1 sensitive surface; Center time grid line 4 is positioned at the central area on silicon chip 1 sensitive surface; On the line of demarcation of silicon chip 1 central area and silicon chip 1 fringe region arbitrarily a bit apart from this near silicon chip 1 seamed edge between distance between silicon chip 1 seamed edge length 1/4～1/3, and all point equates apart from the minimum distance of silicon chip 1 seamed edge on the line of demarcation of silicon chip 1 central area and silicon chip 1 fringe region.The width of center time grid line 4 is greater than the width of edge time grid line 4, and the width of edge time grid line 3 is preferably 50～70 μ m, and the width of center time grid line 4 is preferably 60～90 μ m.The quantity of main grid line 2 is preferably two, and center time grid line 4 is between two main grid lines 2, and the two ends of many center time grid lines 4 are connected 3 equal main grid lines 2 connections of all edges time grid line respectively with two main grid lines 2.
As stated, then can well realize the utility model.
Claims (5)
1. two gradual change half tone structures of solar cell; It is characterized in that: comprise square silicon chip (1); The sensitive surface of said silicon chip (1) is provided with many main grid lines (2), many edge time grid lines (3) and many center time grid lines (4); Said many main grid lines (2) laterally arrange each other; Many edge time grid line (3) laterally arranges each other, and many center time grid lines (4) laterally arrange each other, and edge time grid line (3) is connected with all vertical main grid line (2) of center time grid line (4) and with main grid line (2); Said edge time grid line (3) is positioned at the fringe region on silicon chip (1) sensitive surface, and said center time grid line (4) is positioned at the central area on silicon chip (1) sensitive surface, and the width of center time grid line (4) is greater than the width of edge time grid line (4).
2. two gradual change half tone structures of solar cell according to claim 1; It is characterized in that: on the line of demarcation of said silicon chip (1) central area and silicon chip (1) fringe region arbitrarily a bit apart from this near silicon chip (1) seamed edge between distance be positioned between silicon chip (1) the seamed edge length 1/4～1/3, and all point equates apart from the minimum distance of silicon chip (1) seamed edge on the line of demarcation of silicon chip (1) central area and silicon chip (1) fringe region.
3. two gradual change half tone structures of solar cell according to claim 1 is characterized in that: the width of said edge time grid line (3) is 50～70 μ m, and the width of said center time grid line (4) is 60～90 μ m.
4. two gradual change half tone structures of solar cell according to claim 1, it is characterized in that: the quantity of said main grid line (2) is two.
5. according to two gradual change half tone structures of each described solar cell of claim 1～4; It is characterized in that: two horizontal seamed edges of said edge time grid line (3) and the center time all parallel silicon chip of grid line (4) (1), two vertical seamed edges of the parallel silicon chip of said main grid line (2) (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220242971 CN202564378U (en) | 2012-05-28 | 2012-05-28 | Double gradual-change screen structure of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220242971 CN202564378U (en) | 2012-05-28 | 2012-05-28 | Double gradual-change screen structure of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202564378U true CN202564378U (en) | 2012-11-28 |
Family
ID=47214003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220242971 Expired - Fee Related CN202564378U (en) | 2012-05-28 | 2012-05-28 | Double gradual-change screen structure of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202564378U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178133A (en) * | 2012-12-12 | 2013-06-26 | 英利能源（中国）有限公司 | Electrode grid line structure of crystalline silicon solar cell |
-
2012
- 2012-05-28 CN CN 201220242971 patent/CN202564378U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178133A (en) * | 2012-12-12 | 2013-06-26 | 英利能源（中国）有限公司 | Electrode grid line structure of crystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102610668A (en) | Improved electrode structure of solar cell | |
| CN102931245A (en) | Solar cell front face grid line and solar cell sheet printed with same | |
| CN202564379U (en) | Screen structure of solar cell | |
| CN102544128B (en) | Solar cell | |
| CN202523721U (en) | Positive grid line electrode structure of improved crystalline silicon cell | |
| CN202564378U (en) | Double gradual-change screen structure of solar cell | |
| CN201918393U (en) | Solar cell with increased positive-electrode fine grid lines | |
| CN203055923U (en) | Solar cell front face grid line and solar cell sheet printed with same | |
| CN202871805U (en) | Front electrode structure of a crystal silicon solar battery | |
| CN203085565U (en) | Novel solar battery positive electrode | |
| CN203013742U (en) | Front-side electrode of solar battery | |
| CN202183381U (en) | Cell plate for solar cell pack with low shading area and high current collection | |
| CN204792813U (en) | Brilliant silicon solar cell positive electrode and solar cell | |
| CN204497242U (en) | A kind of electrode structure of N-type double-side solar cell | |
| CN203521432U (en) | Electrode structure of solar cell sheet | |
| CN202957258U (en) | Crystalline silicon solar battery and front side electrode thereof | |
| CN202183399U (en) | Solar cell pack | |
| CN202965448U (en) | Positive electrode net plate suitable for solar energy high sheet resistance cell | |
| CN206628479U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN204441295U (en) | The electrode structure at right side of crystal silicon solar batteries and crystal silicon solar batteries | |
| CN202183382U (en) | Solar cell slice | |
| CN204659171U (en) | A kind of crystal silicon solar batteries positive electrode half tone | |
| CN203941918U (en) | A kind of main grid line divides the solar battery sheet of face setting with thin grid line | |
| CN203325917U (en) | Solar cell grid line capable of improving electrical performance and reliability of solar cell piece | |
| CN103117314B (en) | Solar battery sheet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121128 Termination date: 20170528 |