CN202465957U - Silicon wafer diffusion furnace - Google Patents
Silicon wafer diffusion furnace Download PDFInfo
- Publication number
- CN202465957U CN202465957U CN2011205542427U CN201120554242U CN202465957U CN 202465957 U CN202465957 U CN 202465957U CN 2011205542427 U CN2011205542427 U CN 2011205542427U CN 201120554242 U CN201120554242 U CN 201120554242U CN 202465957 U CN202465957 U CN 202465957U
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- inlet pipe
- silicon chip
- diffusion furnace
- heater
- gas
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Abstract
The utility model discloses a silicon wafer diffusion furnace which comprises a furnace body, wherein the furnace body is provided with at least one air inlet pipe; an gas mixing chamber is arranged between the furnace body and the air inlet pipe; and the diameter or the width of the gas mixing chamber is greater than the diameter of the air inlet pipe. According to the utility model, the silicon wafer diffusion furnace is simple in structure, strong in operability and low in cost,enables mixed gas to be mixed uniformly before the mixed gas enters the furnace body, and also enables the concentration of each gas in the furnace body to be uniform at each part, and thus a silicon wafer can be ensured to have favorable internal square block resistance uniformity.
Description
Technical field
The utility model relates to the diffusion furnace technical field, relates in particular to a kind of silicon chip diffusion furnace.
Background technology
In the photovoltaic cell industry, the homogeneity of silicon chip square resistance is an important parameter of decision solar cell electrical property.From the industry situation, square resistance reaches more than 5% in the silicon chip sheet, and presents characteristics broad in the middle, all around little.At present, the sun power industry is used for the structure of the diffusion furnace of diffusion technique: at body of heater, POCl3 gas molecule, oxygen and the silicon generation phosphorus that reacts, phosphorus advance in silicon under the pyritous condition and form PN junction.The flow of nitrogen is maximum, is used for taking reactant gases and reaction product (waste gas) to fire door from the stove tail, and waste gas is discharged from tail pipe then.Side's resistance homogeneity in the silicon chip sheet is relevant with silicon chip gas concentration homogeneity of present position in body of heater.Present diffusion furnace air intake structure makes three kinds of gases after the moment mixing of orthogonal inlet pipe, get in the body of heater immediately; Oxygen and POCl3 do not have thorough mixing evenly just to begin to react with silicon chip; Add that the space between the silicon chip is narrow and small, cause the interior side's resistance of sheet homogeneity very poor.
Summary of the invention
The utility model technical problem to be solved is; A kind of simple in structure, strong operability, silicon chip diffusion furnace with low cost are provided; Said silicon chip diffusion furnace can make mixed gas before getting into body of heater, mix; And all gases concentration is all kept evenly in intravital each position of stove, thereby guarantee that silicon chip has resistance homogeneity in side's in the good sheet.
In order to solve the problems of the technologies described above, the utility model provides a kind of silicon chip diffusion furnace, and said silicon chip diffusion furnace comprises body of heater, and said body of heater is provided with at least one inlet pipe;
Be provided with gas mixing chamber between said body of heater and the said inlet pipe.
As the improvement of such scheme, the diameter of said gas mixing chamber or width are greater than the diameter of said inlet pipe.
As the improvement of such scheme, said body of heater is provided with at least two inlet pipe.
As the improvement of such scheme, said inlet pipe is located on the same straight line.
As the improvement of such scheme, said inlet pipe is located on the vertical direction.
As the improvement of such scheme, said body of heater is a tubular structure.
As the improvement of such scheme, said silicon chip diffusion furnace also is provided with the tail pipe that is used for waste discharge gas.
Implement the beneficial effect of the utility model:
In silicon chip diffusion furnace technical field; Compared with prior art, the utility model is provided with gas mixing chamber between body of heater and inlet pipe, and the diameter of gas mixing chamber or width are greater than the diameter of inlet pipe; This can guarantee that mixed gas just mixes in gas mixing chamber before getting into body of heater; After getting into body of heater, the concentration of all gases (for example oxygen and POCl3) all keeps evenly in intravital each position of stove, thereby guarantees that silicon chip has resistance homogeneity in side's in the good sheet.Secondly; Inlet pipe is located on the same straight line, preferably is located on the vertical direction, can make gas get into gas mixing chamber with the mode of convection current in opposite directions with bigger flow; Effectively improve gas blended homogeneity, guarantee that further silicon chip has resistance homogeneity in side's in the good sheet.
Description of drawings
Fig. 1 is the structural representation of a kind of silicon chip diffusion furnace of the utility model.
Embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer, will combine accompanying drawing that the utility model is done further to describe in detail below.
As shown in Figure 1, the utility model embodiment provides a kind of silicon chip diffusion furnace, and said silicon chip diffusion furnace comprises body of heater 1, and said body of heater 1 is provided with at least one inlet pipe 2; Be provided with gas mixing chamber 3 between said body of heater 1 and the said inlet pipe 2.
The diameter of said gas mixing chamber 3 or width are greater than the diameter of said inlet pipe 2.
In body of heater 1, POCl3 gas molecule, oxygen and the silicon generation phosphorus that reacts, phosphorus advance in silicon under the pyritous condition and form PN junction.The flow of nitrogen is maximum, is used for taking reactant gases and reaction product (waste gas) to fire door from the stove tail, and waste gas is discharged from tail pipe then.Side's resistance homogeneity in the silicon chip sheet is relevant with silicon chip gas concentration homogeneity of present position in body of heater 1.
For improving the side's resistance homogeneity in the silicon chip sheet, at first need improve the homogeneity of silicon chip gas concentration of present position in body of heater.The utility model is through being provided with gas mixing chamber 3 between body of heater 1 and inlet pipe 2; And the diameter of gas mixing chamber 3 or width are greater than the diameter of inlet pipe 2; This can guarantee that mixed gas just mixes for 3 li at gas mixing chamber before getting into body of heater 1; After getting into body of heater 1, the concentration of all gases (for example oxygen and POCl3) all keeps evenly in intravital each position of stove, thereby guarantees that silicon chip has resistance homogeneity in side's in the good sheet.
Said body of heater 1 is provided with at least two inlet pipe 2.
Preferably, said body of heater 1 is provided with two inlet pipe 2.An inlet pipe is used for feeding nitrogen and oxygen, and another inlet pipe is used for feeding POCl3.
Said inlet pipe 2 is located on the same straight line.
Preferably, said inlet pipe 2 is located on the vertical direction.
The structure design of this inlet pipe 2 can make gas get into gas mixing chamber 3 with the mode of convection current in opposite directions with bigger flow; After the mixed for several minutes; Get into body of heater 1, effectively improve gas blended homogeneity, guarantee that further silicon chip has resistance homogeneity in side's in the good sheet.
Said body of heater 1 is a tubular structure.
Said silicon chip diffusion furnace also is provided with the tail pipe that is used for waste discharge gas.
In actually operating; Silicon chip vertically is placed among the body of heater 1 of silicon chip diffusion furnace; Nitrogen and oxygen are passed into gas mixing chamber 3 from top to bottom from inlet pipe 2, and POCl3 is passed into gas mixing chamber 3 from the bottom to top from inlet pipe 2, and all gases gets in the gas mixing chamber 3 with bigger flow with the mode of convection current in opposite directions; After the mixed for several minutes, get into body of heater 1.In body of heater 1, POCl3 gas molecule, oxygen and the silicon generation phosphorus that reacts, phosphorus advance in silicon under the pyritous condition and form PN junction.The flow of nitrogen is maximum, is used for taking reactant gases and reaction product (waste gas) to fire door from the stove tail, and waste gas is discharged from tail pipe then.
The above is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also are regarded as the protection domain of the utility model.
Claims (7)
1. a silicon chip diffusion furnace is characterized in that, said silicon chip diffusion furnace comprises body of heater, and said body of heater is provided with at least one inlet pipe;
Be provided with gas mixing chamber between said body of heater and the said inlet pipe.
2. silicon chip diffusion furnace as claimed in claim 1 is characterized in that the diameter of said gas mixing chamber or width are greater than the diameter of said inlet pipe.
3. silicon chip diffusion furnace as claimed in claim 2 is characterized in that said body of heater is provided with at least two inlet pipe.
4. silicon chip diffusion furnace as claimed in claim 3 is characterized in that said inlet pipe is located on the same straight line.
5. silicon chip diffusion furnace as claimed in claim 3 is characterized in that said inlet pipe is located on the vertical direction.
6. silicon chip diffusion furnace as claimed in claim 1 is characterized in that, said body of heater is a tubular structure.
7. silicon chip diffusion furnace as claimed in claim 6 is characterized in that, said silicon chip diffusion furnace also is provided with the tail pipe that is used for waste discharge gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205542427U CN202465957U (en) | 2011-12-27 | 2011-12-27 | Silicon wafer diffusion furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205542427U CN202465957U (en) | 2011-12-27 | 2011-12-27 | Silicon wafer diffusion furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202465957U true CN202465957U (en) | 2012-10-03 |
Family
ID=46914134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205542427U Expired - Lifetime CN202465957U (en) | 2011-12-27 | 2011-12-27 | Silicon wafer diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202465957U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311373A (en) * | 2013-06-18 | 2013-09-18 | 奥特斯维能源（太仓）有限公司 | Device for improving sheet resistance uniformity |
| CN105908260A (en) * | 2016-05-18 | 2016-08-31 | 广东爱康太阳能科技有限公司 | Diffusion furnace for crystalline silicon solar cells |
-
2011
- 2011-12-27 CN CN2011205542427U patent/CN202465957U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311373A (en) * | 2013-06-18 | 2013-09-18 | 奥特斯维能源（太仓）有限公司 | Device for improving sheet resistance uniformity |
| CN105908260A (en) * | 2016-05-18 | 2016-08-31 | 广东爱康太阳能科技有限公司 | Diffusion furnace for crystalline silicon solar cells |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180226 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121003 |
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| CX01 | Expiry of patent term |