CN202369388U - Device controlled to generate quantum dots or quantum lines - Google Patents

Device controlled to generate quantum dots or quantum lines Download PDF

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Publication number
CN202369388U
CN202369388U CN2011205263912U CN201120526391U CN202369388U CN 202369388 U CN202369388 U CN 202369388U CN 2011205263912 U CN2011205263912 U CN 2011205263912U CN 201120526391 U CN201120526391 U CN 201120526391U CN 202369388 U CN202369388 U CN 202369388U
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CN
China
Prior art keywords
quantum
container
electrode
quantum dot
quantum wire
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Expired - Fee Related
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CN2011205263912U
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Chinese (zh)
Inventor
武光明
邢光建
张志乾
周洋
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Beijing Institute of Petrochemical Technology
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Beijing Institute of Petrochemical Technology
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Priority to CN2011205263912U priority Critical patent/CN202369388U/en
Application granted granted Critical
Publication of CN202369388U publication Critical patent/CN202369388U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a device for controllable generate quantum dot or quantum line generation, belonging to the field of low-dimensional quantum material preparation devices. The device comprises a container, a power source, a first electrode and a control electrode, wherein the first electrode is arranged above the bottom of the container and is electrically connected with the positive pole of the power source arranged outside the container; the control electrode is movably arranged outside the bottom face of the container, is attached to the bottom face of the container and is electrically connected with the negative pole of the power source; and the first electrode is corresponding to the control electrode in an up-and-down mode, and an electric field is formed between the first electrode and the control electrode via the applied voltage. The device has simplicity in operation and good controllable effect, the controllable growth of any quantum dot or quantum line position can be realized, and a basis is established for the machining and manufacturing of quantum devices.

Description

The device of controlled generation quantum dot or quantum wire
Technical field
The utility model relates to quantum dot or quantum wire field of material preparation, relates in particular to a kind of growth quantum point of position-controllable or the device of quantum wire.
Background technology
Because quantum effect is obvious, in physics, be also referred to as quantum dot or quantum wire during yardstick 1~20 nanometer of nano particle or nano wire.Quantum dot or quantum wire array are listed in fields such as area source, display, solar cell, information storage has very application prospects.The location preparation of quantum dot and quantum wire has formed a bottleneck difficult problem to the preparation of quantum device, and the application of quantum device is more extensive, like quantum computer, biochip, nanometer robot etc.
When existing preparation quantum dot or quantum wire material, in most of device, quantum dot or quantum wire position are uncontrollable at random.Template and photoengraving device are controlled to being prepared on the position of quantum dot or quantum wire, but the preparation of template is uncontrollable, and photoengraving is bigger to the quantum effect influence of quantum dot or quantum wire.Content that the person exploring that the preparation of the quantum dot of controllable position or quantum linear array is the nano materials research remains a difficulty to a small amount of number quantum dot and the preparation that needs the quantum wire of shape, the difficult problem that the accurate localization growth is generally acknowledged especially.
The utility model content
The utility model embodiment provides the device of a kind of controlled generation quantum dot or quantum wire; The device existence that can solve present preparation quantum dot or quantum wire material is uncontrollable to quantum dot or quantum wire, and quantum dot that makes or quantum wire material can't satisfy the requirement of some application-specific from aspects such as performance, application.
Solving the problems of the technologies described above the technical scheme that is adopted is:
The utility model embodiment provides the device of a kind of controlled generation quantum dot or quantum wire, and this device comprises:
Container, power supply, first electrode and control electrode; Wherein,
First electrode is arranged on the top in the container, and the positive electrical of the power supply outer with being arranged on container is connected;
Control electrode is movably arranged on outside the container bottoms, amplexiforms container bottoms, is connected with the negative electricity of said power supply;
First electrode is corresponding up and down with control electrode, forms electric field by the voltage that applies between the two.
In the said apparatus, said electrodes use metal probe or metal blade.
In the said apparatus, it is the metal probe of sharp-pointed taper that said metal probe adopts the tip.
In the said apparatus, said metal probe or metal blade are a plurality of.
In the said apparatus, said power source voltage can be adjusted between 0.1V~60V.
In the said apparatus, said first electrode is a plate armature.
In the said apparatus, said container bottom also is provided with leakage fluid dram.
In the said apparatus, said device also comprises: temperature controller and electric heater; Wherein,
Electric heater is arranged on the bottom of container, and the substrate of growth quantum point or quantum wire can be set on the electric heater; Electric heater is electrically connected with the outer temperature controller that is provided with of container.
Can find out by the above-mentioned technical scheme that provides; In the device that the utility model embodiment provides; Form steady electric field through applying voltage between first electrode and the control electrode; Quantum dot or quantum wire material in the solution are grown on the substrate of electrode position at the electric field force of steady electric field, thus can through electric field induce substrate need position growth quantum point or quantum wire, reach the purpose of controlled preparation quantum dot or quantum wire.This device is simple to operate, controlled effective, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the utility model embodiment; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiment of the utility model, for those of ordinary skill in the art; Under the prerequisite of not paying creative work, can also obtain other accompanying drawings according to these accompanying drawings.
The schematic representation of apparatus of the controllable growth quantum dot that Fig. 1 provides for the utility model embodiment;
Another structural representation of the controllable growth quantum dot that Fig. 2 provides for the utility model embodiment or the device of quantum wire;
Each label corresponding components name is called among the figure: the container of 1-dress solution; The 2-substrate; The 3-quantum dot; The 4-metal probe; The 5-negative pole; 6-is anodal; The 7-power supply; The 8-heating wire; Row's solution mouth on the 9-container; The 10-temperature control system.
The specific embodiment
Below in conjunction with specific embodiment the technical scheme in the utility model is carried out clear, intactly description, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment of the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the protection domain of the utility model.
Do to describe in detail further in the face of the utility model embodiment down.
The utility model embodiment provides the device of a kind of controlled generation quantum dot or quantum wire, and as shown in Figure 1, this device comprises: container, power supply, first electrode and control electrode;
Wherein, first electrode is arranged on the top in the container, and the positive electrical of the power supply outer with being arranged on container is connected; First electrode is a plate armature;
Control electrode is movably arranged on outside the container bottoms, amplexiforms container bottoms, is connected with the negative electricity of said power supply;
First electrode is corresponding up and down with control electrode, forms electric field by the voltage that applies between the two.
Electrodes use metal probe in the said apparatus or metal blade; Wherein, metal probe employing tip is the metal probe of sharp-pointed taper; Metal probe or metal blade are a plurality of.
Power source voltage in the said apparatus can be adjusted between 0.1V~60V.
In the said apparatus, said first electrode is a plate armature.
As shown in Figure 2, on the basis of said apparatus, temperature controller and electric heater can also be set constitute temperature control system; Wherein, electric heater is arranged on the bottom of container, and the substrate of growth quantum point or quantum wire can be set on the electric heater; Electric heater is electrically connected with the outer temperature controller that is provided with of container.
Utilize the step of controlled generation quantum dot of said apparatus or quantum wire specific as follows:
In the solution that is dissolved with quantum dot or quantum wire material, be provided for the non-conductive substrate of growth quantum point or quantum wire; Control electrode (metal probe or metal blade) is set on the substrate bottom surface, control electrode (metal probe or metal blade) is contacted with the substrate lower surface;
First electrode (can be that plate electrode is connected with positive source) is set in solution; Go up connection negative pole (being connected) at control electrode (metal probe or metal blade) with the negative pole of power supply; Apply voltage to positive and negative electrode and form steady electric field; Make quantum dot or the synthetic back of quantum wire material in the solution charged, synthetic quantum dot or quantum wire material generate quantum dot or quantum wire with particle form sedimentation on the substrate of electrode (metal probe or metal blade) position; The quantum dot that the position-controllable of adjustment electrode (metal probe or metal blade) is grown on substrate or the position of quantum wire.In the reality, can adjust the position of electrode (metal probe or metal blade), the quantum dot of shape control growth or the position and the shape of quantum wire, and the thickness of the size of quantum dot and quantum wire can be confirmed by the voltage of electrode (metal probe or metal blade).
Control electrode (metal probe or metal blade) can adopt sharp-pointed metal probe and metal blade, and metal probe can be a plurality of, and arrangement can confirm as required that metal probe contacts with substrate, and substrate is got over Bao Yuehao, is limited in less than below the millimeter.Metal blade position, shape and quantity are also set as required.Power supply imposes on the voltage controlled of each electrode built in 0.1~60 volt, can confirm that preferred voltage is controlled at 0.1~10V according to quantum dot or quantum wire size needs.In the reality, can adopt device shown in Figure 2 to carry out controllable growth quantum dot or quantum wire, after quantum dot or quantum wire generation; Solution is slowly discharged from leakage fluid dram; Liquid levels is closed leakage fluid dram, through the temperature control system heated substrate near the substrate top surface time; Make remaining liq through the thermal decomposition volatilization, temperature is 30 ℃~50 ℃ (see figure 3)s.The substrate that will growth be had quantum dot or quantum wire at last improves the adhesive strength of quantum dot or quantum wire through heat treatment.This device is simple to operate, controlled effective, thereby makes the quantum wire material of preparing can satisfy multiple requirement of special occasion, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
The above; Be merely the preferable specific embodiment of the utility model; But the protection domain of the utility model is not limited thereto; Any technical staff who is familiar with the present technique field is in the technical scope that the utility model discloses, and the variation that can expect easily or replacement all should be encompassed within the protection domain of the utility model.Therefore, the protection domain of the utility model should be as the criterion with the protection domain of claims.

Claims (8)

1. the device of controlled generation quantum dot or quantum wire is characterized in that this device comprises:
Container, power supply, first electrode and control electrode; Wherein,
First electrode is arranged on the top in the container, and the positive electrical of the power supply outer with being arranged on container is connected;
Control electrode is movably arranged on outside the container bottoms, amplexiforms container bottoms, is connected with the negative electricity of said power supply;
First electrode is corresponding up and down with control electrode, forms electric field by the voltage that applies between the two.
2. device according to claim 1 is characterized in that, said electrodes use metal probe or metal blade.
3. device according to claim 2 is characterized in that, it is the metal probe of sharp-pointed taper that said metal probe adopts the tip.
4. device according to claim 2 is characterized in that, said metal probe or metal blade are a plurality of.
5. the device of controlled generation quantum dot according to claim 1 or quantum wire is characterized in that said power source voltage can be adjusted between 0.1V~60V.
6. the device of controlled generation quantum dot according to claim 1 or quantum wire is characterized in that said first electrode is a plate armature.
7. the device of controlled generation quantum dot according to claim 1 or quantum wire is characterized in that said container bottom also is provided with leakage fluid dram.
8. the device of controlled generation quantum dot according to claim 1 or quantum wire is characterized in that said device also comprises:
Temperature controller and electric heater; Wherein,
Electric heater is arranged on the bottom of container, and the substrate of growth quantum point or quantum wire can be set on the electric heater; Electric heater is electrically connected with the outer temperature controller that is provided with of container.
CN2011205263912U 2011-12-15 2011-12-15 Device controlled to generate quantum dots or quantum lines Expired - Fee Related CN202369388U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011205263912U CN202369388U (en) 2011-12-15 2011-12-15 Device controlled to generate quantum dots or quantum lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011205263912U CN202369388U (en) 2011-12-15 2011-12-15 Device controlled to generate quantum dots or quantum lines

Publications (1)

Publication Number Publication Date
CN202369388U true CN202369388U (en) 2012-08-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011205263912U Expired - Fee Related CN202369388U (en) 2011-12-15 2011-12-15 Device controlled to generate quantum dots or quantum lines

Country Status (1)

Country Link
CN (1) CN202369388U (en)

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20120808

Termination date: 20161215