CN202308056U - High-power light emitting diode (LED) heat radiation structure - Google Patents
High-power light emitting diode (LED) heat radiation structure Download PDFInfo
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- CN202308056U CN202308056U CN2011204484551U CN201120448455U CN202308056U CN 202308056 U CN202308056 U CN 202308056U CN 2011204484551 U CN2011204484551 U CN 2011204484551U CN 201120448455 U CN201120448455 U CN 201120448455U CN 202308056 U CN202308056 U CN 202308056U
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- led
- wide area
- dielectric layer
- radiator structure
- pedestal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The utility model relates to a high-power light emitting diode (LED) heat radiation structure, which comprises a base, a dielectric layer and a wide area heat conduction layer, wherein heat radiation fins and a chip arrangement surface which are made of a high heat conduction material are integratedly formed on the base; the dielectric layer is covered on the chip arrangement surface of the substrate; the wide area heat conduction layer for directly mounting an LED chip is formed on the outer surface of the dielectric layer by using metal slurry; and a conductive circuit for mounting the LED chip is arranged on the wide area heat conduction layer. According to the high-power LED heat radiation structure, the dielectric layer and the wide area heat conduction layer are covered on the surface of the chip arrangement surface of the base, so that the LED chip is directly arranged on the chip arrangement surface of the base, and heat produced by the LED chip can be quickly diffused and outwards conducted through the heat radiation structure; therefore, the LED luminous efficiency is kept, and situations of color attenuation and the like are avoided; and effects that the heat radiation efficiency is improved, the service life of an LED is prolonged and the like are achieved.
Description
Technical field
The relevant a kind of high-capacity LED radiator structure of the utility model refers to that especially a kind of LED of making crystal thermal source produces the high-capacity LED radiator structure of soaking, diffusion through wide area thermal conductance layer.
Background technology
As everyone knows, the influence that heat is produced for the LED crystal is very big, and the high-capacity LED thermal source can't be derived the luminous efficiency that will have a strong impact on LED.70% LED can be because too high connect surface temperature and break down, and the life cycle of LED product, brightness, product stability etc. all can be with connecing that surface temperature improves and depleted.When the LED thermal source can't effectively be derived, will cause LED to connect surface temperature (Junction Temperature) and raise, what have influence on will be the delivery efficiency decay of light thereupon.Therefore, big for fear of the high-capacity LED heat generation density, can distribute efficiently for making thermal source, each producer actively seeks solution invariably, so there are various heat dissipation technologys to be applied on the LED light fixture.And the approach conclusion that reduces thermal resistance has following several kinds of modes:
1) thermal resistance of reduction chip, the heat that reduction itself is produced;
2) optimize the passage of heat;
A. channel architecture: length is short more good more, and area is the bigger the better, and can eliminate the bottleneck in the heat conduction;
B. the conductive coefficient of channel material is the bigger the better;
C. improve encapsulation procedure;
3) reinforcement is led/heat sinking function;
4) select for use and lead/material that heat dispersion is higher;
5) good secondary cooling mechanism;
6) reduce ambient temperature;
7) control rated input power;
8) minimizing LED and the thermal resistance between the cooling mechanism for the second time.
And now the high-capacity LED light fixture in the application of heat dissipation technology; How through the LED crystal is laid on the substrate (heat conducting element) with the particular arrangement mode; This substrate (heat conducting element) is installed on the radiating seat (heat dissipation element); Folder is established a heat conduction glue-line between substrate (heat conducting element) and radiating seat (heat dissipation element), conducts to the purpose that radiating seat (heat dissipation element) reaches heat radiation in the hope of the thermal source that makes the LED crystal smoothly through substrate (heat conducting element).Like TaiWan, China M413816 utility model patent: high-brightness LED light fixture heat-dissipating structure, TaiWan, China M409367 utility model patent: radiating module and have radiating module LED light fixture etc. announcement; In the path in order to conduction heat sources in this radiating module; Heat conduction glue-line between heat conducting element and the heat dissipation element may cause thermal resistance; Hot transfer efficiency is reduced, and when increasing worker and cost.
The utility model content
In view of this, the purpose of the utility model is to provide a kind of high-capacity LED radiator structure, through the one design of heat conducting element and heat dissipation element, makes high-capacity LED avoid the thermal resistance situation that adds up at the heat conduction path of heat radiation; The thermal source that the LED crystal is distributed can be maintained the LED luminous efficiency through this radiator structure rapidly to outdiffusion conduction, and situation such as can not take place that look declines, and the useful life that can promote LED.
For achieving the above object; The utility model provides a kind of high-capacity LED radiator structure; It comprises a pedestal, a dielectric layer and a wide area thermal conductance layer, and said pedestal is the one-body molded structure that radiating fin and cloth crystal face are arranged of high heat-conducting, and the cloth crystal face of said pedestal is coated with a dielectric layer; The dielectric layer appearance forms with metal slurries and is used to supply a directly configuration wide area thermal conductance layer on it of LED crystal, and wide area thermal conductance layer is laid with the conducting wire that supplies the configuration of LED crystal.
As preferred version, wherein said pedestal is processed by the material of aluminium.
As preferred version, wherein said dielectric layer is processed by the material of aluminium oxide.
As preferred version, wherein said dielectric layer is processed by the material of aluminium nitride.
As preferred version, wherein said metal slurries is made up of the silver slurry.
As preferred version, wherein said metal slurries is made up of the copper slurry.
As preferred version, wherein said wide area thermal conductance layer takes shape in the dielectric layer surface of cloth crystal face with large-area coverage rate.
As preferred version, wherein said wide area thermal conductance layer is laid the conducting wire that forms the LED crystalline electrode.
As preferred version, wherein said pedestal is provided with lens in the LED of cloth crystal face crystal outside mask, and forms an overcoat at the lens periphery encapsulating.
The high-capacity LED radiator structure that the utility model provided; Can be through the cloth crystal plane surface coating dielectric layer of this pedestal and the structure of wide area thermal conductance layer; Supply the LED crystal directly to be disposed on the cloth crystal face of this pedestal, the thermal source that causes the LED crystal to be distributed can conduct to outdiffusion rapidly through the radiator structure of the utility model, so that the LED luminous efficiency is maintained; And therefore situation such as can not take place that look declines can reach the effects such as useful life of promoting radiating efficiency and LED.
Description of drawings
Shown in Figure 1 is the structure composition generalized section of the utility model;
The embodiment sketch map that supplies the configuration of LED crystal for the utility model shown in Figure 2;
Another embodiment sketch map that supplies the configuration of LED crystal for the utility model shown in Figure 3;
The exploded perspective view that is the utility model application implementation in light fixture shown in Figure 4;
Shown in Figure 5 is another embodiment generalized section of the utility model.
The critical piece title:
Pedestal-1; Lamp socket-1`; Radiating fin-11; Radiating fin-11`; Cloth crystal face-12; Cloth crystal face-12`;
Dielectric layer-2;
Wide area thermal conductance layer-3; Conducting wire-31;
LED crystal-4; Electrode pin-41;
Overcoat-5; Lens-51.
Embodiment
In order further to understand the characteristic and the technology contents of the utility model, see also following detailed description and accompanying drawing, yet following accompanying drawing and embodiment only provide the usefulness of reference with explanation about the utility model, be not to be used to limit the utility model.
Please refer to as shown in Figure 1, the high-capacity LED radiator structure of the utility model, it mainly comprises a pedestal 1, a dielectric layer 2 and a wide area thermal conductance layer 3; Pedestal 1 has structures such as radiating fin 11 and cloth crystal face 12 so that high heat-conducting is one-body molded, and the cloth crystal face 12 main zones that supply many high-capacity LED crystal 4s to implement encapsulation is characterized in that:
The utility model is coated with a dielectric layer 2 to guarantee insulation on the surface of cloth crystal face 12, dielectric layer 2 is mainly with aluminium oxide (Al
2O
3), insulation such as aluminium nitride (AlN) material constitutes, and makes pedestal 1 meet standard high pressure resistant and that insulate in cloth crystal face 12 parts.The utility model also forms a wide area thermal conductance layer 3 in the appearance of dielectric layer 2 with the metal slurries fusion; The LED crystal 4 is disposed on the wide area thermal conductance layer 3; The metal slurries of wide area thermal conductance layer 3 is silver slurry or copper slurry; Wide area thermal conductance layer 3 capable for LED crystal 4 directly attach conduction heat sources, and wide area thermal conductance layer 3 plans that framework goes out the conducting wire 31 of LED crystal 4 in moulding; Supply the LED crystal 4 with support rack type encapsulation pattern configuration or with COB encapsulation pattern configuration (like Fig. 2 and shown in Figure 3), with the electrode pin 41 and the conducting wire 31 weldering knots of LED crystal 4.
Utilize the said structure characteristic; The LED crystal 4 is disposed on the wide area thermal conductance layer 3; The thermal source that the LED crystal 4 is distributed through wide area thermal conductance layer 3 is given the samming diffusion, but makes high-capacity LED crystal 4 thermal source quick penetration dielectric layer 2 and disengage via the radiating fin 11 of pedestal 1.
Moreover the utility model dielectric layer 2 and wide area thermal conductance layer 3 are through the technology of electricity slurry ion surfacing, and directly mutual in regular turn moulding is attached to cloth crystal face 12 top layers of pedestal 1; Therefore; On the path of LED crystal 4 thermal source conduction, do not have other extra thermal resistance (for example, heat-conducting glue) and produce; The thermal source that the LED crystal 4 is distributed is directly absorbed and diffusion by wide area thermal conductance layer 3; And then be directly conducted to dielectric layer 2 and pedestal 1, and then the radiating fin 11 by pedestal 1 outwards sheds, and its heat conduction efficiency is best, the fastest.
Wide area thermal conductance layer 3 mainly takes shape in cloth crystal face 12 top layers (itself and cloth crystal face 12 between have dielectric layer 2) with large-area coverage rate; The conducting wire 31 dialysis not conductings mutual (as shown in Figure 3) that the framework of planning goes out in 3 moulding of wide area thermal conductance layer with it; The wide area thermal conductance layer 3 large-area thermal source that helps the LED crystal 4 that is designed with spread; Make thermal source from LED crystal 4 bottom directly paste touch wide area thermal conductance layer 3 and spread out of after; Can spread the effect that reaches soaking rapidly laterally by spontaneous focus, make the thermal source very first time can not produce accumulation and cause LED crystal 4 poor heat radiation at heat generating spot.
In addition; The high heat-conducting that the utility model pedestal 1 is adopted is a preferred embodiment with aluminium (Al); Have under the skillful technology of radiating fin 11 at the one mould model through aluminium; Make pedestal 1 increasing reaching and reducing aspect the advantage two of manufacturing cost of processing speed, pure competitiveness is all arranged.
According to the utility model pedestal 1 be formed in one the design situation under; Pedestal 1 also can directly be implemented as the lamp socket 1` (seeing also as shown in Figure 4) of high-capacity LED light fixture; Show the body formed radiating fin 11` that has at lamp socket 1`; Chosen place forms cloth crystal face 12`, and there are dielectric layer 2 and wide area thermal conductance layer 3 in cloth crystal face 12` top layer equally electricity slurry ion surfacing, and the LED crystal 4 directly is disposed on the wide area thermal conductance layer 3; Be covered with lens 51 in the LED crystal 4 outside of cloth crystal face 12` again; Impose moisture seal at lens 51 peripheral encapsulatings and form an overcoat 5, make overcoat 5 complete being coated on the wide area thermal conductance layer 3 (as shown in Figure 5), can directly utilize lamp socket 1` to accomplish the high-capacity LED light fixture of heat radiation to form one.
The described high-capacity LED radiator structure design of the utility model; Meet a large amount of productions except that on processing procedure, having, reduce the advantage of manufacturing cost at pedestal 1 (lamp socket 1`); It then has more significantly soaking, heat conduction performance, the heat-conducting effect of this superelevation for the rapid transporting of LED crystal 4 thermal source; When providing high-capacity LED to use, situation such as the light decay that the LED crystal 4 is not had cause because of poor heat radiation, luminous efficiency reduction produce.
The above; Be merely the preferred embodiment of the utility model; Be not in order to limit the protection range of the utility model,, in like manner all should belong to the scope of patent protection of the utility model so the equivalence of using the utility model patent spirit and scope to do such as changes and modifies.
Claims (9)
1. high-capacity LED radiator structure; It comprises a pedestal, a dielectric layer and a wide area thermal conductance layer; Said pedestal is the one-body molded structure that radiating fin and cloth crystal face are arranged of high heat-conducting; It is characterized in that: the cloth crystal face of said pedestal is coated with a dielectric layer, and the dielectric layer appearance forms with metal slurries and is used to supply a directly configuration wide area thermal conductance layer on it of LED crystal, and wide area thermal conductance layer is laid with the conducting wire that supplies the configuration of LED crystal.
2. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said pedestal is processed by the material of aluminium.
3. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said dielectric layer is processed by the material of aluminium oxide.
4. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said dielectric layer is processed by the material of aluminium nitride.
5. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said metal slurries is made up of the silver slurry.
6. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said metal slurries is made up of the copper slurry.
7. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said wide area thermal conductance layer takes shape in the dielectric layer surface of cloth crystal face with large-area coverage rate.
8. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said wide area thermal conductance layer is laid the conducting wire that forms the LED crystalline electrode.
9. high-capacity LED radiator structure as claimed in claim 1 is characterized in that: said pedestal is provided with lens in the LED of cloth crystal face crystal outside mask, and forms an overcoat at the lens periphery encapsulating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204484551U CN202308056U (en) | 2011-11-14 | 2011-11-14 | High-power light emitting diode (LED) heat radiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204484551U CN202308056U (en) | 2011-11-14 | 2011-11-14 | High-power light emitting diode (LED) heat radiation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202308056U true CN202308056U (en) | 2012-07-04 |
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ID=46376890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204484551U Expired - Fee Related CN202308056U (en) | 2011-11-14 | 2011-11-14 | High-power light emitting diode (LED) heat radiation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202308056U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104019389A (en) * | 2014-05-30 | 2014-09-03 | 广东金源照明科技有限公司 | Efficient-heat-dissipation integrated LED modulator tube structure and production process thereof |
| CN105720185A (en) * | 2016-04-16 | 2016-06-29 | 浙江聚珖科技股份有限公司 | LED module welded with semiconductor temperature difference power generation chips |
-
2011
- 2011-11-14 CN CN2011204484551U patent/CN202308056U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104019389A (en) * | 2014-05-30 | 2014-09-03 | 广东金源照明科技有限公司 | Efficient-heat-dissipation integrated LED modulator tube structure and production process thereof |
| CN105720185A (en) * | 2016-04-16 | 2016-06-29 | 浙江聚珖科技股份有限公司 | LED module welded with semiconductor temperature difference power generation chips |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20131114 |