CN202305422U - Silicon wafer and silicon solar cell wafer defect detector - Google Patents
Silicon wafer and silicon solar cell wafer defect detector Download PDFInfo
- Publication number
- CN202305422U CN202305422U CN2011203927800U CN201120392780U CN202305422U CN 202305422 U CN202305422 U CN 202305422U CN 2011203927800 U CN2011203927800 U CN 2011203927800U CN 201120392780 U CN201120392780 U CN 201120392780U CN 202305422 U CN202305422 U CN 202305422U
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- solar cell
- silicon
- cell sheet
- silicon chip
- silicon solar
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The utility model provides a silicon wafer and silicon solar cell wafer defect detector, comprising a silicon wafer and silicon solar cell wafer photoinduced luminescence excitation mechanism, an infrared imaging mechanism and a computer, wherein the silicon wafer and silicon solar cell wafer photoinduced luminescence excitation mechanism is arranged to be near to a silicon wafer or a silicon solar cell wafer so as to excite the silicon wafer to illuminate, the infrared imaging mechanism is arranged above the silicon wafer or the silicon solar cell wafer to detect luminescence signals of the silicon wafer or the silicon solar cell wafer and transmit the luminescence signals to the computer, and the computer obtains defect parameters of the silicon wafer or the silicon solar cell wafer by image acquisition, image processing and data analysis software installed in the computer. The silicon wafer and silicon solar cell wafer defect detector can conveniently and rapidly detect the defects such as defects of a silicon material itself, defects in crystallization, fragments and material pollution, realizes non-contact detection, and has the advantages and characteristics of being simple in structure, convenient to use, reliable and precise in defect parameter detection, and the like.
Description
Technical field
The utility model relates to a kind of quality detection apparatus, relates in particular to a kind of silicon chip and silicon solar cell sheet defect detecting device.
Background technology
Possibly there are faults such as the defective, crystal defect, fragment, material contamination of material itself in silicon chip and silicon solar cell sheet, and these faults can make the performance degradation of solar cell in follow-up manufacture process or in using, so need detect in early stage.At present, on the solar cell production line, the defects detection means of silicon chip and silicon solar cell sheet are the detection method that relies on artificial visual mostly, and loss and error rate are very high, have influenced quality and progress that solar cell is produced.Therefore; The situation of silicon chip and silicon solar cell sheet defective fault in the touchless dynamic monitoring large-scale production; Before series welding and lamination, silicon chip and the possible defective failure problems of silicon solar cell sheet are carried out statistical study, avoid more yield rate loss to seem very necessary so that can in time find the problem in technology or the equipment differentiating the defect type and the possible origin cause of formation thereof as early as possible.
The utility model content
The purpose of the utility model for a kind of silicon chip and silicon solar cell sheet defect detecting device are provided, is carried out detection of dynamic to be implemented on the production line to silicon chip and silicon solar cell sheet exactly.
In order to achieve the above object; The utility model has adopted following technical scheme: a kind of silicon chip and silicon solar cell sheet defect detecting device; Be arranged on the path of silicon chip in the production line or silicon solar cell sheet, comprise silicon chip and silicon solar cell sheet photoluminescence excitation mechanism, infrared imaging mechanism and computing machine; What silicon chip and silicon solar cell sheet photoluminescence excitation mechanism were arranged on silicon chip and silicon solar cell sheet nearby excites silicon chip and silicon solar cell sheet luminous; Infrared imaging mechanism is arranged on the top of silicon chip or silicon solar cell sheet and detects the luminous signal of silicon chip and it is transferred to computing machine, and computing machine draws the defect parameters of silicon chip and silicon solar cell sheet through installation IMAQ, Flame Image Process and DAS within it.
Described silicon chip photoluminescence excitation mechanism comprises the led light source and first light source power; Be provided with first optical filter at the led light source front end; The led light source and first optical filter fuse and are arranged on the below of silicon chip; The luminous signal that the light that led light source will send is processed into specific wavelength through first optical filter projects and excites silicon chip luminous on the silicon chip, and first light source power links to each other with led light source to be provided electric energy and control its luminous intensity to led light source.
Described silicon chip and silicon solar cell sheet photoluminescence excitation mechanism comprise laser instrument and secondary light source power supply; Laser instrument is arranged on the oblique upper of silicon chip or silicon solar cell sheet; The light that laser instrument will send projects and excites silicon chip or silicon solar cell sheet luminous on silicon chip or the silicon solar cell sheet, and the secondary light source power supply links to each other with laser instrument to be provided electric energy and control its luminous intensity to laser instrument.
Described infrared imaging mechanism front end is provided with second optical filter.
Silicon chip of the utility model and silicon solar cell sheet defect detecting device excite silicon slice under test or silicon solar cell sheet to produce the luminous signal of specific wavelength through led light source or laser instrument; Through infrared imaging mechanism and COMPUTER DETECTION and handle the luminous signal of the specific wavelength that silicon chip sends, obtain its reliable defect parameters data.Can detect the defectives such as defective, crystal defect, fragment, material contamination of silicon sheet material itself quickly and easily, and realize contactless detection, have simple in structure, easy to use, defect parameters and detect advantage and characteristics such as reliable accurate.
Description of drawings
Fig. 1 is the structural representation of the utility model silicon chip and silicon solar cell sheet defect detecting device.
Embodiment
Referring to Fig. 1, the utility model silicon chip defect detecting device is arranged on the path of silicon chip in the production line or silicon solar cell sheet 1, comprises silicon chip or silicon solar cell sheet photoluminescence excitation mechanism 2, infrared imaging mechanism 3 and computing machine 4.
What silicon chip or silicon solar cell sheet photoluminescence excitation mechanism 2 were arranged on silicon chip or silicon solar cell sheet 1 nearby excites silicon chip or silicon solar cell sheet luminous; Infrared imaging mechanism 3 is arranged on the top of silicon chip or silicon solar cell sheet and detects the luminous signal of silicon chip or silicon solar cell sheet and it is transferred to computing machine, and computing machine 4 draws the defect parameters of silicon chip or silicon solar cell sheet through installation IMAQ, Flame Image Process and DAS within it.
Silicon chip in the utility model and silicon solar cell sheet photoluminescence excitation mechanism 2 can adopt two kinds of versions, and the silicon chip of two kinds of versions and silicon solar cell sheet photoluminescence excitation mechanism can and be deposited setting, select to use.First kind of version comprises the led light source 21 and first light source power 22; Be provided with first optical filter 23 at led light source 21 front ends; The led light source 21 and first optical filter 23 fuse and are arranged on the below of silicon chip 1; The luminous signal that the light that led light source 21 will send is processed into specific wavelength through first optical filter 23 projects on silicon chip or the silicon solar cell sheet 1 and excites silicon chip luminous, and first light source power 22 links to each other with led light source 21 to be provided electric energy and control its luminous intensity to led light source.
Second kind of version comprises laser instrument 24 and secondary light source power supply 25; Laser instrument 24 is arranged on the oblique upper of silicon chip or silicon solar cell sheet 1; The light that laser instrument 24 will send projects and excites silicon chip or silicon solar cell sheet luminous on the silicon chip 1, and secondary light source power supply 25 links to each other with laser instrument to be provided electric energy and control its luminous intensity to laser instrument.
Front end in infrared imaging mechanism 3 is provided with second optical filter 31.
In testing process, the optical excitation silicon slice under test that at first utilizes led light source or laser instrument to send, the size of led light source luminous intensity realizes through the control to first light source power; The size of laser instrument luminous intensity realizes through the control to the secondary light source power supply.Because silicon chip or silicon solar cell sheet can produce the luminous signal of specific wavelength after being excited, through detecting and handle the luminous signal of the specific wavelength that silicon chip or silicon solar cell sheet send, thereby obtain its reliable defect parameters data.
Claims (4)
1. silicon chip and silicon solar cell sheet defect detecting device are arranged on the path of silicon chip in the production line or silicon solar cell sheet, it is characterized in that: comprise silicon chip and silicon solar cell sheet photoluminescence excitation mechanism, infrared imaging mechanism and computing machine; What silicon chip and silicon solar cell sheet photoluminescence excitation mechanism were arranged on silicon chip or silicon solar cell sheet nearby excites silicon chip or silicon solar cell sheet luminous; Infrared imaging mechanism is arranged on the top of silicon chip or silicon solar cell sheet and detects the luminous signal of silicon chip or silicon solar cell sheet and it is transferred to computing machine, and computing machine draws the defect parameters of silicon chip or silicon solar cell sheet through installation IMAQ, Flame Image Process and DAS within it.
2. silicon chip as claimed in claim 1 and silicon solar cell sheet defect detecting device; It is characterized in that: described silicon chip and silicon solar cell sheet photoluminescence excitation mechanism comprise the led light source and first light source power; Be provided with first optical filter at the led light source front end; The led light source and first optical filter fuse and are arranged on the below of silicon chip or silicon solar cell sheet; The luminous signal that the light that led light source will send is processed into specific wavelength through first optical filter projects and excites silicon chip or silicon solar cell sheet luminous on the silicon chip, and first light source power links to each other with led light source to be provided electric energy and control its luminous intensity to led light source.
3. silicon chip as claimed in claim 2 and silicon solar cell sheet defect detecting device; It is characterized in that: described silicon chip and silicon solar cell sheet photoluminescence excitation mechanism comprise laser instrument and secondary light source power supply; Laser instrument is arranged on the oblique upper of silicon chip or silicon solar cell sheet; The light that laser instrument will send projects on silicon chip or the silicon solar cell sheet and excites silicon chip luminous, and the secondary light source power supply links to each other with laser instrument to be provided electric energy and control its luminous intensity to laser instrument.
4. silicon chip as claimed in claim 1 and silicon solar cell sheet defect detecting device is characterized in that: described infrared imaging mechanism front end is provided with second optical filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203927800U CN202305422U (en) | 2011-10-16 | 2011-10-16 | Silicon wafer and silicon solar cell wafer defect detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203927800U CN202305422U (en) | 2011-10-16 | 2011-10-16 | Silicon wafer and silicon solar cell wafer defect detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202305422U true CN202305422U (en) | 2012-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203927800U Expired - Lifetime CN202305422U (en) | 2011-10-16 | 2011-10-16 | Silicon wafer and silicon solar cell wafer defect detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202305422U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308491A (en) * | 2013-05-29 | 2013-09-18 | 浙江大学 | Multi-camera synchronously-tracked photoluminescence solar battery detecting device |
| CN103323434A (en) * | 2013-05-29 | 2013-09-25 | 浙江大学 | LED excited solar cell photoluminescence detection device |
| CN103808727A (en) * | 2012-11-13 | 2014-05-21 | 上海太阳能工程技术研究中心有限公司 | Solar photovoltaic panel fault diagnosis method |
| CN109781654A (en) * | 2019-03-12 | 2019-05-21 | 苏州协鑫光伏科技有限公司 | The detection method that silicon chip surface stains |
| CN110195809A (en) * | 2019-06-21 | 2019-09-03 | 东莞威森智能科技有限公司 | A kind of camera mould group, cell silicon chip defect detecting device and detection method |
-
2011
- 2011-10-16 CN CN2011203927800U patent/CN202305422U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103808727A (en) * | 2012-11-13 | 2014-05-21 | 上海太阳能工程技术研究中心有限公司 | Solar photovoltaic panel fault diagnosis method |
| CN103308491A (en) * | 2013-05-29 | 2013-09-18 | 浙江大学 | Multi-camera synchronously-tracked photoluminescence solar battery detecting device |
| CN103323434A (en) * | 2013-05-29 | 2013-09-25 | 浙江大学 | LED excited solar cell photoluminescence detection device |
| CN109781654A (en) * | 2019-03-12 | 2019-05-21 | 苏州协鑫光伏科技有限公司 | The detection method that silicon chip surface stains |
| CN110195809A (en) * | 2019-06-21 | 2019-09-03 | 东莞威森智能科技有限公司 | A kind of camera mould group, cell silicon chip defect detecting device and detection method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |
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| CX01 | Expiry of patent term |