CN202304373U - Agglomerating device for semiconductor elements - Google Patents
Agglomerating device for semiconductor elements Download PDFInfo
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- CN202304373U CN202304373U CN2011203749038U CN201120374903U CN202304373U CN 202304373 U CN202304373 U CN 202304373U CN 2011203749038 U CN2011203749038 U CN 2011203749038U CN 201120374903 U CN201120374903 U CN 201120374903U CN 202304373 U CN202304373 U CN 202304373U
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- semiconductor element
- sintering
- sintering equipment
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- radiant tube
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Abstract
The utility model provides an agglomerating device for semiconductor elements, which comprises an agglomerating furnace body, a transmission screen mesh penetrating through the agglomerating furnace body, a plurality of supports arranged on at least one side of the transmission screen mesh and infrared radiation tubes arranged in the supports, wherein the plurality of supports are arranged in series. By means of the infrared radiation tubes, the agglomerating device for the semiconductor elements directly heats the semiconductor elements and a follower clamp. The infrared radiation tubes with different power and different wavelengths are optimally distributed and arranged in the agglomerating process so that the finished product ratio and the output rate of the semiconductor elements are increased, and the energy consumption is optimized. The semiconductor elements are fully dried, and product reliability is good.
Description
Technical field
The utility model relates to a kind of sintering equipment of semiconductor element.
Background technology
Along with the development of Analogical Circuit Technique, semiconductor element is applied to circuit design more and more widely.Wherein, the sintering process in the semiconductor element is made in the flow process at whole semiconductor element and is occupied crucial status.
In the operation of semiconductor element sintering process; The sintering temperature of control sintering furnace burner hearth is very crucial; Going out the semiconductor element of furnace mouth of sintering furnace and the temperature of pallet must be controlled at below 60 °; And whole technical process must be carried out sintering and cooling under gas shield, must keep dustlessization again simultaneously.
Adopt traditional resistance wire that semiconductor element is heated at present in the sintering equipment of semiconductor element; There is serious deficiency in the sintering equipment of this semiconductor element: the first, resistance wire heats the technological requirement of the heating condition and the sintering of pairing thermal source pattern; Determine the indirect mode that it can only adopt cross-ventilation to conduct heat, and in three phase objects, the air thermal resistance is the highest; Cause the harmful effect that energy consumption is high, the heat effect is low easily, finally cause production efficiency low; The second, because the resistance wire heating causes the environment temperature at sintering workshop very high; Three, adopt the sintering equipment of the semiconductor element that resistance wire heats semiconductor element, this sintering equipment structure makes scaling powder rosin and nitrogen be difficult to reclaim usefulness again, overflows to get in the atmosphere, and the workshop air is polluted; Four, because most of rosin gas can form the knot spot attached to inboard wall of burner hearth in sintering process, can pollute semiconductor element after the carbonization of knot spot.
The utility model content
The purpose of the utility model is to provide a kind of sintering equipment of semiconductor element, with the low problem of production efficiency that adopts the resistance wire heating to cause in the sintering equipment that solves existing semiconductor element.
For addressing the above problem; The utility model provides a kind of sintering equipment of semiconductor element; Comprise: sintering furnace body, the transmission silk screen that runs through said sintering furnace body, at least one side of said transmission silk screen are provided with a plurality of supports, are arranged on the infrared radiant tube in the said support, and said a plurality of support serial connections are provided with.
Preferably, the both sides of said transmission network are provided with said infrared radiant tube.
Preferably, said infrared radiant tube comprises the combination of medium wave infrared radiant tube, short-wave infrared radiant tube and medium wave infrared radiant tube and short-wave infrared radiant tube.
Preferably; The sintering equipment of said semiconductor element also comprises gradually cooling unit; Said gradually cooling unit first is cooling element and second cooling element gradually gradually; Said first gradually cooling element and said second gradually cooling element be separately positioned on the both sides of said transmission silk screen, and said first gradually the distance between cooling element and the said transmission silk screen greater than said second distance between cooling element and the said transmission silk screen gradually.
Preferably, said first gradually cooling element and said second gradually cooling element be a plurality of high thermal conductivity casting pigs.
Preferably, the sintering equipment of said semiconductor element also comprises variable-frequency motor, and said variable-frequency motor is connected with said transmission silk screen.
Preferably, the sintering equipment of said semiconductor element also comprises the separator of mist, and the separator of said mist is collected and is communicated with setting with said support.
Preferably, said infrared radiant tube is fixed in the said support through a plurality of support members.
Preferably, the cavity wall periphery in said sintering furnace body is provided with the high reflectance thin plate.
Preferably, the sintering equipment of said semiconductor element also comprises air curtain, and said air curtain is arranged on the inwall of support.
The sintering equipment of the semiconductor element that the utility model provides; Infrared radiant tube through being arranged in the sintering furnace directly heats semiconductor element and pallet; Optimized distribution and layout different capacity and IR radiation at different wavelengths pipe in sintering process; With the yield rate and the output capacity of raising semiconductor element, and optimized energy consumption.The semiconductor element oven dry is abundant, and product reliability is good; Metallising semiconductor elements is complete, and the finished product rate is high.In addition, it is short that infrared radiant tube starts the response time, and furnace chamber need not insulation during inoperative.
Further, the gradually cooling unit of setting, the application of radiation cooling is carried out gradually row cooling to semiconductor element and pallet, causes silicon wafer to break to prevent to receive cold shock.
Further; The variable-frequency motor that is provided with is in order to the transmission speed of control transmission silk screen; Make semiconductor element in the process of carrying out sintering,, further adjust the speed of service of semiconductor element according to the speed of different radiation conditions through variable-frequency motor adjustment transmission silk screen.
Further, inner rim is provided with the high reflectance thin plate in the chamber of said sintering furnace body, reflexes on semiconductor element and the pallet so that the infrared ray of diffusion is concentrated, and improves the thermal efficiency, reduces the radiant heat unofficial biography simultaneously.
Further, the air curtain of the sintering equipment of semiconductor element is arranged on the inwall of support, and is jet to transmission channel, to prevent the temperature imbalance in the heating function district that each support forms.
Description of drawings
The structural representation of the sintering equipment of the semiconductor element that Fig. 1 provides for the utility model embodiment;
Sintering zone cross-sectional view in the sintering equipment of the semiconductor element that Fig. 2 provides for the utility model embodiment.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment the sintering equipment of the semiconductor element of the utility model proposition is done further explain.According to following explanation and claims, advantage of the utility model and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of aid illustration the utility model embodiment lucidly.
The core concept of the utility model is; A kind of sintering equipment of semiconductor element is provided; Infrared radiant tube through being arranged in the sintering furnace directly heats semiconductor element and pallet; Optimized distribution and layout different capacity and IR radiation at different wavelengths pipe with the yield rate and the output capacity of raising semiconductor element, and have been optimized energy consumption in sintering process.The semiconductor element oven dry is abundant, and product reliability is good; Metallising semiconductor elements is complete, and the finished product rate is high.In addition, it is short that infrared radiant tube starts the response time, and furnace chamber need not insulation during inoperative.
The structural representation of the sintering equipment of the semiconductor element that Fig. 1 provides for the utility model embodiment.With reference to Fig. 1; The sintering equipment of semiconductor element comprises: sintering furnace body 11, the transmission silk screen 14 that runs through said sintering furnace body 11, said transmission silk screen 14 at least one sides are provided with a plurality of support 12, are arranged on the infrared radiant tube 13 in the said support 12, and said a plurality of supports 12 serial connections are provided with.
Further; The sintering equipment of semiconductor element also comprises gradually cooling unit; Said gradually cooling unit comprises first cooling element 15a and the second cooling element 15b gradually gradually; Said first gradually cooling element 15a and said second gradually cooling element 15b be separately positioned on the both sides of said transmission silk screen 14, and said first gradually the distance between cooling element 15a and the said transmission silk screen 14 greater than said second distance between cooling element 15b and the said transmission silk screen 14 gradually.In the present embodiment, first gradually cooling element 15a and said second gradually cooling element 15b be a plurality of high thermal conductivity casting pigs, said high thermal conductivity casting pig absorbs radiant heat, reaching the radiation cooling purpose, and conducts heat to atmosphere.
For describing conveniently, respectively the zones of different at infrared radiant tube 13 places is divided into baking zone 131, pre-burning interface 132, sintering zone 133, heat preservation zone 134 according to the difference of heating function.In addition; First gradually cooling element 15a and second gradually cooling element 15b form gradually cooling zone 136; Be connected with a quench zone 137 with said gradually cooling zone 136, between said gradually cooling zone 136 and said heat preservation zone 134, be provided with the first isolated area 135a, be provided with the second isolated area 135b at the furnace mouth of sintering furnace place; The said second isolated area 135b is connected with said baking zone 131, and the setting of the said first isolated area 135a and the second isolated area 135b can be strengthened the balance of temperature in the sintering furnace body.In addition; In baking zone 131 and pre-burning interface 132, be communicated with the separator 16 that mist is set with said support 12 respectively; Further, the sintering equipment of said semiconductor element also comprises air curtain 17, and said air curtain 17 is arranged on the inwall of support 12; Air curtain 17 is arranged between each district, to guarantee the temperature stabilization in each district.The air curtain 17 that is provided with at the fire door place is incubated not only and prevents that dust from getting in the sintering furnace body chamber; In the present embodiment; What said air curtain 17 adopted is nitrogen, and what adopt at the air curtain that gradually is provided with between cooling zone 136 and the quench zone 137 17 is compressed air, and said compressed air plays certain convection current and conducts cooling effect; Whole cooling procedure is gradually gone carry out, avoid cold shock.
In said baking zone 131; One side of transmission silk screen 14 is provided with infrared radiant tube 13; Said infrared radiant tube 13 is the medium wave infrared radiant tube, in the present embodiment, has two medium wave infrared radiant tubes to be arranged on a side of transmission silk screen 14; At the scaling powder rosin of the sintering position of semiconductor element placement, mainly the organic solvent and the abietic resin of drying semiconductor element in baking zone 131 like tin sheet and coating organic solvent diluting.Because organic solvent and resinae absorb medium wave, so in baking zone 131, adopt the medium wave infrared radiant tube.At this moment, the separator 16 that in baking zone 131, is communicated with the mist that is provided with said support 12 is collected organic solvents, is convenient to organic solvent is in time discharged.
In said pre-burning interface 132; The both sides of transmission silk screen 14 are provided with infrared radiant tube 13; Said infrared radiant tube 13 is medium wave infrared radiant tube and short-wave infrared radiant tube mixed configuration, and transmission silk screen 14 each side respectively are provided with a medium wave infrared radiant tube and a short-wave infrared radiant tube.These pre-burning interface 132 major functions are that semiconductor element is continued oven dry; Simultaneously semiconductor element and pallet being carried out high temperature preheats; Because metal and graphite are to absorb shortwave, therefore semiconductor element and pallet are being carried out need using the short-wave infrared radiant tube when high temperature preheats.The separator 16 that in pre-burning interface 132, is communicated with the mist that is provided with said support 12 is collected retinals, is convenient to pre-burning interface 132 is in time discharged, and is beneficial to cleaner production.
Sintering zone cross-sectional view in the sintering equipment of the semiconductor element that Fig. 2 provides for the utility model embodiment.With reference to Fig. 2, be respectively arranged with two short-wave infrared radiant tubes in the both sides of transmission silk screen 14, the major function of sintering zone 133 is semiconductor element 23 to be carried out high temperature sintering completion metal melt knot.Particularly; Said infrared radiant tube 13 is fixed in the said support 12 through a plurality of support members 21; The while body of heater is provided with top cover 22 and is convenient to clean in the body of heater, and the furnace chamber inner peripheral wall in the sintering zone is provided with high reflectance thin plate 25, makes concentrated the reflexing on semiconductor element 23 and the pallet 24 of infrared ray of diffusion; Improve the thermal efficiency, reduce the radiant heat unofficial biography simultaneously.
Particularly, the infrared radiant tube 13 in baking zone 131, pre-burning interface 132 and heat preservation zone 134 also is to be fixed in the said support 12 through a plurality of support members 21.
The both sides of the transmission silk screen 14 of heat preservation zone 134 are arranged two short-wave infrared radiant tubes respectively, mainly are semiconductor element 23 is carried out heat insulation protecting and slows down cooling velocity.
The sintering equipment that utilizes semiconductor element that the utility model embodiment provides is following to the processing step that semiconductor element carries out: before semiconductor element 23 is carried out sintering; Semiconductor element 23 and pallet 24 are placed on the transmission silk screen 14; In the present embodiment; Said transmission silk screen 14 is the stainless steel guipure, and said stainless steel guipure places on the hollow out stainless steel supporting guide, and the application of weight strainer is regulated guipure tension force automatically simultaneously.Through regulating the variable-frequency motor that is connected with transmission silk screen 14; Control semiconductor element 23 is successively through baking zone 131, pre-burning interface 132, sintering zone 133, heat preservation zone 134, the speed of cooling zone 136 and quench zone 137 gradually; Make semiconductor element 23 oven dry fully, metallization fully.Open the infrared radiant tube 13 in the sintering furnace; Start said transmission silk screen 14; Said semiconductor element 23 is transferred in the said sintering furnace through said transmission silk screen 14, and the said semiconductor element 23 of infrared radiant tube 13 radiation in the said sintering furnace makes said semiconductor element 23 accomplish oven dry, presintering and sintering process successively; The heat radiation that utilizes red-hot object in cooling zone 136 gradually is the characteristic of heat radiation outwards; The high thermal conductivity casting pig that is provided with can absorb radiant heat, cool off purpose to reach radiation, and conduction heat is to atmosphere.The object of accomplishing sintering needs further cooling fast, and cooling reaches preset temperature at short notice, and the therefore last object of accomplishing sintering is through behind the quench zone 137, and whole sintering process finishes.In whole sintering process, the required protective gas of using of sintering process only uses in sintering zone 133, the use amount of having saved protective gas greatly.
Obviously, those skilled in the art can carry out various changes and modification to utility model and not break away from the spirit and the scope of the utility model.Like this, belong within the scope of the utility model claim and equivalent technologies thereof if these of the utility model are revised with modification, then the utility model also is intended to comprise these changes and modification interior.
Claims (10)
1. the sintering equipment of a semiconductor element; It is characterized in that; Comprise: sintering furnace body, the transmission silk screen that runs through said sintering furnace body, at least one side of said transmission silk screen are provided with a plurality of supports, are arranged on the infrared radiant tube in the said support, and said a plurality of support serial connections are provided with.
2. the sintering equipment of semiconductor element as claimed in claim 1 is characterized in that, the both sides of said transmission network are provided with said infrared radiant tube.
3. the sintering equipment of semiconductor element as claimed in claim 1 is characterized in that, said infrared radiant tube comprises the combination of medium wave infrared radiant tube, short-wave infrared radiant tube and medium wave infrared radiant tube and short-wave infrared radiant tube.
4. the sintering equipment of semiconductor element as claimed in claim 1; It is characterized in that; The sintering equipment of said semiconductor element also comprises gradually cooling unit; Said gradually cooling unit comprises first cooling element and second cooling element gradually gradually; Said first gradually cooling element and said second gradually cooling element be separately positioned on the both sides of said transmission silk screen, and said first gradually the distance between cooling element and the said transmission silk screen greater than said second distance between cooling element and the said transmission silk screen gradually.
5. the sintering equipment of semiconductor element as claimed in claim 4 is characterized in that, said first gradually cooling element and said second gradually cooling element be a plurality of high thermal conductivity casting pigs.
6. the sintering equipment of semiconductor element as claimed in claim 1 is characterized in that, the sintering equipment of said semiconductor element also comprises variable-frequency motor, and said variable-frequency motor is connected with said transmission silk screen.
7. the sintering equipment of semiconductor element as claimed in claim 1 is characterized in that, the sintering equipment of said semiconductor element also comprises the separator of mist, and the separator of said mist is communicated with setting with said support.
8. like the sintering equipment of each semiconductor element in the claim 1 to 6, it is characterized in that said infrared radiant tube is fixed in the said support through a plurality of support members.
9. like the sintering equipment of each semiconductor element in the claim 1 to 6, it is characterized in that, the high reflectance thin plate is set at the cavity wall periphery of said sintering furnace body.
10. like the sintering equipment of each semiconductor element in the claim 1 to 6, it is characterized in that the sintering equipment of said semiconductor element also comprises air curtain, said air curtain is arranged on the inwall of support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203749038U CN202304373U (en) | 2011-09-30 | 2011-09-30 | Agglomerating device for semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203749038U CN202304373U (en) | 2011-09-30 | 2011-09-30 | Agglomerating device for semiconductor elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202304373U true CN202304373U (en) | 2012-07-04 |
Family
ID=46373257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203749038U Expired - Fee Related CN202304373U (en) | 2011-09-30 | 2011-09-30 | Agglomerating device for semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202304373U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105333729A (en) * | 2015-10-30 | 2016-02-17 | 成都的卢高科技有限公司 | Energy-saving kiln |
| CN107816888A (en) * | 2017-10-30 | 2018-03-20 | 京东方科技集团股份有限公司 | Sintering equipment and its sintering method |
| CN115155230A (en) * | 2022-07-08 | 2022-10-11 | 深圳市沃尔热缩有限公司 | Teflon tube sintering device |
-
2011
- 2011-09-30 CN CN2011203749038U patent/CN202304373U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105333729A (en) * | 2015-10-30 | 2016-02-17 | 成都的卢高科技有限公司 | Energy-saving kiln |
| CN107816888A (en) * | 2017-10-30 | 2018-03-20 | 京东方科技集团股份有限公司 | Sintering equipment and its sintering method |
| US11280547B2 (en) | 2017-10-30 | 2022-03-22 | Boe Technology Group Co., Ltd. | Sintering device and sintering method thereof |
| CN115155230A (en) * | 2022-07-08 | 2022-10-11 | 深圳市沃尔热缩有限公司 | Teflon tube sintering device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20130930 |