CN202284971U - Semiconductor packaging structural part for pyroelectric infrared sensor and sensor - Google Patents
Semiconductor packaging structural part for pyroelectric infrared sensor and sensor Download PDFInfo
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- CN202284971U CN202284971U CN201120374988XU CN201120374988U CN202284971U CN 202284971 U CN202284971 U CN 202284971U CN 201120374988X U CN201120374988X U CN 201120374988XU CN 201120374988 U CN201120374988 U CN 201120374988U CN 202284971 U CN202284971 U CN 202284971U
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Abstract
The utility model discloses a semiconductor packaging structural part for a pyroelectric infrared sensor and the sensor. The semiconductor packaging structural part comprises an electric conduction metal foil, a field-effect tube bare chip or an operational amplifier bare chip, a plastic package shell body and a support part for supporting sensitive elements. The field-effect tube bare chip or the operational amplifier bare chip are pasted on the electric conduction metal foil and electrically connected with the electric conduction metal foil. The plastic package shell body is used for packaging the electric conduction metal foil and the bare chip. The plastic package shell body exposes a part of the electric conduction metal foil, and the exposed part is used for achieving electrical connection of the electric conduction metal foil and the sensitive elements and pins of a tube socket. The semiconductor packaging structural part for the pyroelectric infrared sensor adopts semiconductor packaging technology to package the field-effect tube bare chip or the operational amplifier bare chip to be in the structure or the shape required by the pyroelectric infrared sensor. The packaging structural part also has the electrical connection function of the substrate of the pyroelectric infrared sensor, the supporting function of the support and the amplifying function of an amplifying element, thereby simplifying internal structure of the sensor, improving reliability and lowering cost.
Description
Technical field
The utility model relates to the pyroelectric infrared sensor technology.
Background technology
Pyroelectric infrared sensor be a kind of be the detector of electric signal with the infrared radiation signal transition.The structure of existing a kind of pyroelectric infrared sensor is as shown in Figure 1, and it comprises base 91, substrate 92, amplifier element 93, sensitive element 94 and pipe cap 95.Base 91 is a metal material, on base 91, is provided with three through holes, and three base pin 96a, 96b and 96c pass this three through holes respectively, pin 96c ground connection wherein, and this pin 96c is electrically connected with base 91; Other two pin 96a, 96b and base 91 keep insulation.Substrate 92 is arranged on the base 91, and the upper surface of substrate 92 is provided with groove and the P.e.c. that is used for ccontaining amplifier element 93, and this P.e.c. has the pad that is electrically connected with the two ends of amplifier element 93, sensitive element 94 and base pin 96a, 96b, 96c.Upper surface at substrate 92 also is provided with pair of brackets 97,98; The side of this pair of brackets 97,98 is provided with conductive layer; Sensitive element 94 is arranged on this pair of brackets 97,98; The two ends of sensitive element 94 are electrically connected with the conductive layer of support 97 and the conductive layer of support 98 respectively, and the conductive layer of the conductive layer of this support 97 and support 98 is electrically connected with the P.e.c. of substrate.Pipe cap 95 is provided with infrared fileter window 99.Pipe cap 95 covers on the base 91, and is tightly connected with this base 91, and substrate 92, amplifier element 93 and sensitive element 94 are covered in pipe cap 95 and 91 spaces that limit jointly of base.
There are some pyroelectric infrared sensors to adopt FET (FET), also have some pyroelectric infrared sensors to adopt operational amplifier as amplifier element 93 as amplifier element 93.Fig. 2 shows the circuit theory diagrams of the pyroelectric infrared sensor that adopts FET.As shown in the figure, an end of sensitive element 94 is electrically connected with the grid G of FET, other end ground connection.The drain D of FET and source S are as the power input and the signal output part of pyroelectric infrared sensor.
Fig. 1 and Fig. 2 only show the pyroelectric infrared sensor example that adopts an amplifier element; In addition; The pyroelectric infrared sensor that adopts two amplifier elements is also arranged on the market, and these two amplifier elements are installed on the same substrate, on base, are provided with four base pins.At present, no matter be the pyroelectric infrared sensor that adopts one or more amplifier elements, its amplifier element all adopts is the good element pasted on surface of plastic packaging, and amplifier element and substrate are discrete components.Owing in making link, exist the manufacturing and the operations such as installation, amplifier element installation and welding of substrate, cause the pyroelectric infrared sensor of this structure to have higher manufacturing cost.
Summary of the invention
The utility model technical matters to be solved is to provide a kind of inside to be packaged with the semiconductor package spare that is used for pyroelectric infrared sensor of FET nude film exclusive disjunction amplifier nude film and conductive metal foil; With the surface substrate of printed wire is arranged to substitute existing discrete amplifier element, thereby reduce the manufacturing cost of pyroelectric infrared sensor.
The utility model further technical matters to be solved is to provide a kind of pyroelectric infrared sensor that adopts above-mentioned semiconductor package spare.
The utility model provides a kind of semiconductor package spare that is used for pyroelectric infrared sensor, and this pyroelectric infrared sensor comprises sensitive element and base pin; Be characterized in that this semiconductor package spare that is used for pyroelectric infrared sensor comprises:
Conductive metal foil;
FET nude film (die) exclusive disjunction amplifier nude film sticks on the conductive metal foil, and is electrically connected with this conductive metal foil;
The plastic packaging housing is used to encapsulate described conductive metal foil and FET nude film exclusive disjunction amplifier nude film; This plastic packaging housing has exposed the partially conductive metal forming, and this exposed portions conductive metal foil is used for realizing being electrically connected with said sensitive element and base pin;
Support is used to support said sensitive element.
The utility model also provides a kind of pyroelectric infrared sensor; Comprise pipe cap, sensitive element, base that has the infrared fileter window and the base pin that passes this base; Pipe cap is located on the base, and is tightly connected with this base, and its characteristics are; This pyroelectric infrared sensor also comprises the semiconductor encapsulating structure spare that is arranged on the base, and this semiconductor package spare comprises:
Conductive metal foil;
FET nude film exclusive disjunction amplifier nude film sticks on the conductive metal foil, and is electrically connected with this conductive metal foil;
The plastic packaging housing is used to encapsulate described conductive metal foil and FET nude film exclusive disjunction amplifier nude film; This plastic packaging housing has exposed the partially conductive metal forming, and this exposed portions conductive metal foil is used for realizing being electrically connected with said sensitive element and base pin;
Support is used to support said sensitive element;
Wherein, sensitive element is arranged on the support; The two ends of this sensitive element and base pin partly are electrically connected with the pairing conductive metal foil that is exposed respectively.
The utility model adopt semiconductor packaging process with FET nude film (die) exclusive disjunction amplifier nude film (die) and conductive metal foil plastic packaging in housing; Utilize this inside to be packaged with the semiconductor package spare of FET nude film exclusive disjunction amplifier nude film and conductive metal foil; Substitute existing discrete amplifier element and the surperficial substrate that printed wire is arranged, can realize electrical connection function, the support functions of support and the enlarging function of amplifier element of the substrate of existing pyroelectric infrared sensor simultaneously.When practicing thrift a substrate element, compare with traditional pyroelectric infrared sensor production technology, also save amplifier element installation and welding technology link, thereby greatly reduced the manufacturing cost of infrared sensor.In addition, owing to saved the operation of installation, welding amplifier element, so the reliability of pyroelectric infrared sensor finished product and yield rate have also obtained raising.
Description of drawings
Fig. 1 is the structural representation of existing a kind of pyroelectric infrared sensor.
Fig. 2 shows the circuit theory diagrams of the pyroelectric infrared sensor that adopts FET.
Fig. 3 is the structural representation of an embodiment of the utility model pyroelectric infrared sensor.
Fig. 4 is the inside schematic top plan view that the utility model is used for an embodiment of semiconductor package spare of pyroelectric infrared sensor.
Fig. 5 is the A-A cross-sectional schematic of Fig. 4, shows a kind of arrangement of pin pad.
Fig. 6 is the A-A cross-sectional schematic of Fig. 4, shows the another kind of arrangement of pin pad.
Fig. 7 is the B-B cross-sectional schematic of Fig. 4.
Fig. 8 is the inside schematic top plan view that the utility model is used for another embodiment of semiconductor package spare of pyroelectric infrared sensor.
Fig. 9 is the B-B cross-sectional schematic of Fig. 8.
Figure 10 is the inside schematic top plan view that the utility model is used for another embodiment of semiconductor package spare of pyroelectric infrared sensor.
Embodiment
Below in conjunction with accompanying drawing the utility model is made and to be further specified.
The support that comprises conductive metal foil, FET nude film exclusive disjunction amplifier nude film, plastic packaging housing and be used to support the sensitive element of this pyroelectric infrared sensor according to the semiconductor package spare of the pyroelectric infrared sensor of the utility model one embodiment.Wherein, conductive metal foil can adopt Copper Foil.The plastic packaging housing can adopt epoxy package.
FET nude film exclusive disjunction amplifier nude film sticks on the conductive metal foil, and is electrically connected with conductive metal foil.The plastic packaging housing is used to encapsulate conductive metal foil and FET nude film exclusive disjunction amplifier nude film; This plastic packaging housing has exposed the partially conductive metal forming, and this exposed portions conductive metal foil is used for realizing being electrically connected with the sensitive element and the base pin of pyroelectric infrared sensor.
Fig. 3 is the structural representation of a specific embodiment of the utility model pyroelectric infrared sensor.Three base pins as shown in Figure 3, that it comprises base 11, semiconductor package spare 12, sensitive element 14, has the pipe cap 15 of infrared fileter window 19 and pass base 11.These three base pins comprise the first pin 16a, the second pin 16b and the 3rd pin 16c.
Base 11 is a metal material, on base 11, is provided with three through holes, and the first pin 16a, the second pin 16b and the 3rd pin 16c pass this three through holes respectively, and wherein the 3rd pin 16c ground connection is electrically connected with base 11; The first pin 16a and the second pin 16b and base 11 keep insulation.
Semiconductor package spare 12 comprises the plastic packaging housing 123 of a FET nude film (die) 121, a conductive metal foil 122 and encapsulation FET nude film 121 and conductive metal foil 122.Conductive metal foil 122 is embedded in the plastic packaging housing 123; As shown in Figure 4, conductive metal foil 122 comprises a metal forming gate pads 122a, a metal forming drain pad 122b and a metal forming source pad 122c, the first pin pad 122d that is used for being electrically connected with the first pin 16a, the second pin pad 122e that is used for being electrically connected with the second pin 16b, the 3rd pin pad 122f that is used for being electrically connected with the 3rd pin 16c, the sensitive element second end pad 122h that is used for the sensitive element first end pad 122g that is electrically connected with an end of sensitive element 14 and is used for being electrically connected with the other end of sensitive element.The first pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f are respectively equipped with the first lead hole 122d1, the second lead hole 122e1 and the 3rd lead hole 122f1 that supplies the first pin 16a, the second pin 16b and the 3rd pin 16c to pass.Above-mentioned exposed portions conductive metal foil comprises the sensitive element first end pad 122g, the sensitive element second end pad 122h, the first pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f.Metal forming gate pads 122a is electrically connected with the sensitive element first end pad 122g through the lead-in wire 1221 on the conductive metal foil; Metal forming drain pad 122b is electrically connected with the first pin pad 122d through the lead-in wire 1222 on the conductive metal foil; Metal forming source pad 122c is electrically connected with the second pin pad 122e through the lead-in wire 1223 on the conductive metal foil, and the sensitive element second end pad 122h is electrically connected with the 3rd pin pad 122f through the lead-in wire 1224 on the conductive metal foil.
FET nude film 121 sticks on the conductive metal foil 122.The grid of this FET nude film is drawn pad, drain electrode and is drawn pad and source electrode and draw pad and be electrically connected with metal forming gate pads 122a, metal forming drain pad 122b and metal forming source pad 122c respectively.In the embodiment shown in Fig. 4, FET nude film 121 has a first type surface and one and this first type surface opposing backside surface, and the source electrode of FET nude film 121 is drawn pad and drain electrode and drawn pad and be arranged on the first type surface, and grid is drawn pad and is arranged on the back side.The back side of FET nude film 121 sticks on the metal forming gate pads 122a through conducting resinl, and grid is drawn pad and is electrically connected with metal forming gate pads 122a formation through conducting resinl.The drain electrode of FET nude film 121 is drawn pad and is electrically connected with metal forming drain pad 122b through bonding line 1225, and source electrode is drawn pad and is electrically connected with metal forming source pad 122c through bonding line 1226.In another embodiment; Also can grid be drawn pad, source electrode draws pad and drain electrode and draws pad and all be arranged on the first type surface of FET nude film 121; At this moment; One slide holder is set on conductive metal foil 122; The back side of FET nude film 121 is pasted on this slide holder through insulating gel, and grid is drawn pad, drain electrode and drawn pad and source electrode and draw pad and be electrically connected with metal forming gate pads 122a, metal forming drain pad 122b and metal forming source pad 122c through bonding line respectively.
With reference to figure 5.Plastic packaging housing 123 is being respectively equipped with the first pin pad hole 123d1, the second pin pad hole 123e1 that exposes the second pin pad 122e that exposes the first pin pad 122d, the 3rd pin pad hole (not shown) that exposes the 3rd pin pad 123f with the first pin pad 122d, the second pin pad 122e, the corresponding position of the 3rd pin pad 122f.This plastic packaging housing 123 also is provided with first pin perforation 123d2 that supplies the first pin 16a to penetrate, second pin perforation 123e2 that the confession second pin 16b penetrates and the 3rd pin perforation (not shown) that supplies the 3rd pin to penetrate.The first pin pad hole 123d1, the second pin pad hole 123e1 and the 3rd pin pad hole are connected with first pin perforation 123d2, second pin perforation 123e2 and the 3rd pin perforation perforation respectively.The aperture of boring a hole greater than first pin perforation 123d2, second pin perforation 123e2 and the 3rd pin respectively in the aperture in the first pin pad hole 123d1, the second pin pad hole 123e1 and the 3rd pin pad hole.The first pin pad hole 123d1 is forming step with first pin perforation 123d2 joining place.Equally, the second pin pad hole 123e1 and the 3rd pin pad hole are also forming step with the joining place of second pin perforation 123e2 and the perforation of the 3rd pin respectively.The pore size of first pin perforation 123d2, second pin perforation 123e2 and the perforation of the 3rd pin preferably equates with the aperture of the first lead hole 122d1, the second lead hole 122e1 and the 3rd lead hole 122f1 respectively.
Conductive metal foil also can comprise a plurality of electric capacity pads that are used for a plurality of resistance pads that are electrically connected with outer meeting resistance and are used for being electrically connected with external capacitor; At this moment, the plastic packaging housing also is provided with a plurality of resistance conductive holes that expose these a plurality of resistance pads correspondingly respectively and a plurality of electric capacity conductive holes that expose these a plurality of electric capacity pads correspondingly respectively.
In one embodiment; Above-mentioned a plurality of resistance pads, a plurality of electric capacity pad, the first pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f all can be through the side direction protrusions of preformed mode conductive metal forming 122; In mould envelope technology subsequently; Make these a plurality of resistance pads be exposed to the aperture of pairing resistance conductive hole respectively; These a plurality of electric capacity pads are exposed to the aperture of pairing electric capacity conductive hole respectively; This first pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f are exposed to the aperture in the first pin pad hole, the aperture in the second pin pad hole and the aperture in the 3rd pin pad hole respectively, and no longer are depressed in the inside in hole.Among Fig. 6; Only show the first pin pad 122d and the second pin pad 122e; As shown in the figure; The top protrusion of the first pin pad 122d and the second pin pad 122e conductive metal forming 122, the first pin pad 122d and the second pin pad 122e are exposed to the aperture in the first pin pad hole and the aperture in the second pin pad hole respectively.
In the embodiment of Fig. 7, plastic packaging housing 123 is provided with the support that is used to support sensitive element 14, and this support is the pair of brackets 1231,1232 that is convexly equipped with at plastic packaging housing 123 upper surfaces.Be provided with the first conductive hole 122g3 at plastic packaging housing upper surface near the position of support 1231 sides; Be provided with the second conductive hole 122h3 at plastic packaging housing upper surface near the position of support 1232 sides, the first conductive hole 122g3 and the second conductive hole 122h3 all connect the upper and lower surface of plastic packaging housing.Sensitive element first end pad 122g and the sensitive element second end pad 122h are all through the upwards bending of stamping forming technology; Be respectively formed at vertical part 122g1 that exposes among the first conductive hole 122g3 and vertically extend and the vertical part 122h1 that in the second conductive hole 122h3, exposes and vertically extend; Wherein, The vertical part 122g1 of the sensitive element first end pad 122g is close to the side of support 1231, and the end face of this vertical part 122g1 flushes with the end face of support 1231; And the vertical part 122h1 of the sensitive element second end pad 122h is close to support 1232; The end face of this vertical part 122h1 flushes with the end face of support 1232; The conductive layer role that vertically is arranged on the cradle in part 122g1,122h1 and the prior art is identical; Sensitive element 14 is arranged on 1231,1232 last times of this pair of brackets, and the two ends of sensitive element 14 can be electrically connected with vertical part 122g1 and vertical part 122h1 respectively through conducting resinl.
In another embodiment; Like Fig. 8 and shown in Figure 9; First conductive hole 1233 and second conductive hole 1234 are separately positioned on the end face of support 1231 and support 1232; First conductive hole 1233 exposes the sensitive element first end pad 122g, and second conductive hole 1234 exposes the sensitive element second end pad 122h.Needs with sensitive element 14 with the sensitive element first end pad 122g, when the sensitive element second end pad 122h is electrically connected; Can be in first conductive hole 1233 and second conductive hole 1234 filled conductive glue 80; This conducting resinl for example can be a scolding tin glue, and the two ends of sensitive element 14 are electrically connected with sensitive element first end pad 122g and the sensitive element second end pad 122h respectively through conducting resinl 80.In Fig. 8; First conductive hole 1233 and second conductive hole 1234 be shaped as circle; And be arranged at the center of support 1231 and support 1232 end faces respectively; Yet this first conductive hole 1233 and second conductive hole 1234 also can be other shapes such as square, ellipse, also can be arranged at the marginal position of cradle top surface.
Figure 10 is the inside schematic top plan view that the utility model is used for another embodiment of semiconductor package spare of pyroelectric infrared sensor.In this embodiment, sensitive element first end pad 122g and the sensitive element second end pad 122h are exposed to the plastic packaging outside through the mode that conductive hole is set, but directly are exposed at outside the plastic packaging housing, and upwards bending.Support is the pair of brackets 1235,1236 that is convexly equipped with on plastic packaging housing 123 upper surfaces; These pair of brackets 1235,1236 edges near the plastic packaging housing; The lateral surface 1235A of support 1235 and the lateral surface 123A of plastic packaging housing roughly are positioned at same plane, and the lateral surface 1236A of support 1236 and the lateral surface 123B of plastic packaging housing roughly are positioned at same plane.The sensitive element first end pad 122g of this bending and the sensitive element second end pad 122h are close to lateral surface 1235A, the 1236A of this pair of brackets 1235,1236 respectively, and end face flushes with the end face of this pair of brackets 1235,1236 respectively.When sensitive element 14 is arranged on 1235,1236 last times of this pair of brackets, the two ends of sensitive element can be electrically connected with the sensitive element first end pad and the sensitive element second end pad of this bending respectively through conducting resinl.
In another embodiment, support can be directly by being exposed to plastic packaging housing 123 outsides and being used for realizing that with sensitive element the partially conductive metal forming that is electrically connected constitutes, and need not be provided with support this moment on the plastic packaging housing.As shown in Figure 10 upwards the sensitive element first end pad 122g and the sensitive element second end pad 122h of bending if its top is higher than the surface of plastic packaging housing, can constitute the support of supporting sensitive element.In order to obtain support effects more stably, the top of sensitive element first end pad 122g and the sensitive element second end pad 122h can also be towards further bending relatively of horizontal direction.Sensitive element can be suspended on the support that is made up of sensitive element first end pad 122g and the sensitive element second end pad 122h, and the two ends of sensitive element are electrically connected with the sensitive element first end pad and the sensitive element second end pad of this bending respectively.
During assembling, semiconductor package spare 12 is arranged on the base 11.The top of the first pin 16a penetrates first pin perforation 123d2 and the first lead hole 122d1 successively, and is electrically connected with the first pin pad 122d; The top of the second pin 16b penetrates second pin perforation 123e2 and the second lead hole 122e1 successively, and is electrically connected with the second pin pad 122e; The top of the 3rd pin 16c penetrates perforation of the 3rd pin and the 3rd lead hole 122f1 successively, and is electrically connected with the 3rd pin pad 122f.Sensitive element 14 is arranged on this pair of brackets 1231,1232, and the two ends of sensitive element 14 are electrically connected with sensitive element first end pad and the sensitive element second end pad respectively.The pipe cap 15 that is provided with infrared fileter window 19 covers on the base 11, and is tightly connected with this base 11, and sensitive element 14, semiconductor package spare 12 are covered in pipe cap 15 and 11 spaces that limit jointly of base.
In another embodiment, plastic packaging housing upper surface offers groove, and these groove two opposed side edges constitute support.Sensitive element 14 is placed on the top of groove, and is supported on these groove two opposed side edges, thereby between the bottom surface of sensitive element and groove, forms the space.First conductive hole 1233 and second conductive hole are separately positioned on the plastic packaging surface of shell on the limit, two opposite sides of groove, and expose sensitive element first end pad 122g and the sensitive element second end pad 122h respectively.The two ends of sensitive element 14 are electrically connected with sensitive element first end pad 122g and the sensitive element second end pad 122h respectively through conducting resinl, and this conducting resinl for example can adopt scolding tin glue.
In the above embodiments; Be to illustrate with single sensitive element and monolithic FET nude film, the utility model also is applicable to single sensitive element and single operational amplifier nude film and two above sensitive elements is set and the situation of two above FET nude film exclusive disjunction amplifier nude films.Situation so that two sensitive elements and two FET nude film exclusive disjunction amplifier nude films to be set is an example, and these two FET nude film exclusive disjunction amplifier nude films all stick on the conductive metal foil 122, and are electrically connected with this conductive metal foil.Plastic packaging housing 123 encapsulation conductive metal foil 122 and two FET nude film exclusive disjunction amplifier nude films; Plastic packaging housing 123 expose portion conductive metal foils, this exposed portions conductive metal foil are used to realize being electrically connected of this conductive metal foil and two sensitive elements and base pin; Also be provided with the support that is used to support two sensitive elements on the plastic packaging housing.
The semiconductor package spare that is used for pyroelectric infrared sensor of the utility model can pass through the following steps manufacturing:
Step 1 provides a conductive metal foil, a plurality of FET nude films or a plurality of operational amplifier nude film is sticked on this conductive metal foil, and each FET nude film exclusive disjunction amplifier nude film is electrically connected with conductive metal foil.The conductive metal foil that in this step 1, uses is strip, and the conductive metal foil of this strip is provided with technology limit and pilot hole.
Conductive metal foil is furnished with circuit pattern, utilize between sensitive element that this circuit pattern can realize pyroelectric infrared sensor and the FET nude film exclusive disjunction amplifier nude film be electrically connected and sensitive element, FET nude film exclusive disjunction amplifier nude film and base pin between be electrically connected.Be provided with that grid is drawn pad and principal plane is provided with drain electrode and draws pad and source electrode and draw for the FET nude film of pad for the back side; Can the back side of FET nude film be sticked on through conducting resinl on the metal forming gate pads of conductive metal foil, source electrode drawn pad and drain electrode draw pad and be electrically connected with the metal forming source pad and the metal forming drain pad of conductive metal foil respectively through bonding line.
Step 2; Through a plurality of FET nude films of plastic package die plastic packaging or a plurality of operational amplifier nude film and conductive metal foil; Formation has exposed the plastic packaging housing of partially conductive metal forming; Be formed for supporting the support of sensitive element simultaneously, this exposed portions conductive metal foil is used for realizing being electrically connected with the sensitive element and the base pin of pyroelectric infrared sensor.
Want the exposed portions conductive metal foil can carry out preformed earlier, as bending or strike out the side direction protrusion of conductive metal forming 122, through the plastic package die plastic packaging time, it is exposed again, the material that plastic packaging adopts for example is an epoxy resin; The support of supporting sensitive element can be arranged on the plastic packaging housing, and is integrally formed with the plastic packaging housing, and perhaps, this support is by being exposed to the plastic packaging outside and being used for realizing that with sensitive element the partially conductive metal forming that is electrically connected constitutes.Through design, be easy to form the hole that exposes conductive metal foil and as the support and the groove of support to plastic package die.
Step 3 separates into the single semiconductor package spare that is used for pyroelectric infrared sensor with the conductive metal foil of accomplishing encapsulation, and removes unnecessary rim charge.
Claims (10)
1. semiconductor package spare that is used for pyroelectric infrared sensor, described pyroelectric infrared sensor comprises sensitive element and base pin; It is characterized in that this semiconductor package spare that is used for pyroelectric infrared sensor comprises:
Conductive metal foil;
FET nude film exclusive disjunction amplifier nude film sticks on the described conductive metal foil, and is electrically connected with this conductive metal foil;
The plastic packaging housing is used to encapsulate described conductive metal foil and FET nude film exclusive disjunction amplifier nude film; This plastic packaging housing has exposed the partially conductive metal forming, and this exposed portions conductive metal foil is used for realizing being electrically connected with said sensitive element and base pin;
Support is used to support said sensitive element.
2. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 1 is characterized in that,
Described base pin comprises the 3rd pin of first pin, second pin and ground connection;
The FET nude film sticks on the described conductive metal foil, and described FET nude film has that gate electrode is drawn pad, source electrode draws pad and drain electrode is drawn pad;
Described conductive metal foil comprises metal forming gate pads, metal forming drain pad, metal forming source pad, is used for the sensitive element first end pad that is electrically connected with an end of said sensitive element, the 3rd pin pad that is used for the sensitive element second end pad that is electrically connected with the other end of said sensitive element, the first pin pad that is used for being electrically connected with first pin, the second pin pad that is used for being electrically connected with second pin and is used for being electrically connected with the 3rd pin; The described first pin pad, the second pin pad and the 3rd pin pad are respectively equipped with first lead hole, second lead hole and the 3rd lead hole that supplies first pin, second pin and the 3rd pin to pass;
Said exposed portions conductive metal foil comprises the sensitive element first end pad, the sensitive element second end pad, the first pin pad, the second pin pad and the 3rd pin pad;
The 3rd pin perforation that described plastic packaging housing is provided with the first pin pad hole of the exposure first pin pad, the second pin pad hole that exposes the second pin pad, the 3rd pin pad hole that exposes the 3rd pin pad, second pin perforation that first pin is bored a hole, confession second pin penetrates that supplies first pin to penetrate and supplies the 3rd pin to penetrate; The first pin pad hole, the second pin pad hole and the 3rd pin pad hole are connected with said first pin perforation, the perforation of second pin and the 3rd pin perforation perforation respectively; The aperture of boring a hole greater than the perforation of first pin, the perforation of second pin and the 3rd pin respectively in the aperture in the first pin pad hole, the second pin pad hole and the 3rd pin pad hole;
Described gate electrode is drawn pad, source electrode and is drawn pad and drain electrode and draw pad and be electrically connected with described metal forming gate pads, metal forming source pad and metal forming drain pad respectively; The metal forming gate pads is electrically connected with the sensitive element first end pad, and the metal forming drain pad is electrically connected with the first pin pad, and the metal forming source pad is electrically connected with the second pin pad, and the sensitive element second end pad is electrically connected with the 3rd pin pad.
3. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 2 is characterized in that, said plastic packaging housing is provided with first conductive hole that exposes the sensitive element first end pad and second conductive hole that exposes the sensitive element second end pad;
Described support is the pair of brackets that is convexly equipped with on plastic packaging housing upper surface, and described first conductive hole and second conductive hole are separately positioned on the end face of this pair of brackets.
4. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 2 is characterized in that, said plastic packaging housing is provided with first conductive hole that exposes the sensitive element first end pad and second conductive hole that exposes the sensitive element second end pad;
Described support is the pair of brackets that is convexly equipped with on plastic packaging housing upper surface; Described first conductive hole and second conductive hole are separately positioned on the position of plastic packaging housing upper surface near this pair of brackets side, and first conductive hole and second conductive hole all connect the upper and lower surface of plastic packaging housing;
The upwards bending in described first conductive hole and second conductive hole respectively of described sensitive element first end pad and the sensitive element second end pad is formed on the first vertically part and the second vertical part that in second conductive hole, exposes and vertically extend that exposes in first conductive hole and vertically extend; Described first vertically part with second vertically part be close to the side of this pair of brackets respectively, and this first vertically part flush with the end face of this pair of brackets respectively with second vertical end face partly.
5. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 2 is characterized in that,
Described support is the pair of brackets that is convexly equipped with on plastic packaging housing upper surface, and the lateral surface of the lateral surface of this pair of brackets and plastic packaging housing roughly is positioned at same plane;
Described sensitive element first end pad and the sensitive element second end pad all are exposed to outside the plastic packaging housing, and upwards bending; The sensitive element first end pad of this bending and the lateral surface of being close to this pair of brackets respectively of the sensitive element second end pad, and end face flushes with the end face of this pair of brackets respectively.
6. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 1 is characterized in that, described plastic packaging housing upper surface offers groove, and these groove two opposed side edges constitute described support.
7. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 1; It is characterized in that; Described support is arranged on the said plastic packaging housing; Perhaps, this support is by being exposed to the plastic packaging outside and being used for realizing that with said sensitive element the partially conductive metal forming that is electrically connected constitutes.
8. the semiconductor package spare that is used for pyroelectric infrared sensor as claimed in claim 2; It is characterized in that described conductive metal foil also comprises a plurality of electric capacity pads that are used for a plurality of resistance pads that are electrically connected with outer meeting resistance and are used for being electrically connected with external capacitor; The plastic packaging housing also is provided with a plurality of resistance conductive holes that expose these a plurality of resistance pads correspondingly respectively and a plurality of electric capacity conductive holes that expose these a plurality of electric capacity pads correspondingly respectively;
Described a plurality of resistance pad and a plurality of electric capacity pad all protrude to a side direction of this conductive metal foil; And; These a plurality of resistance pads are exposed to the aperture of pairing resistance conductive hole respectively, and these a plurality of electric capacity pads are exposed to the aperture of pairing electric capacity conductive hole respectively.
9. pyroelectric infrared sensor; Comprise pipe cap, sensitive element, base that has the infrared fileter window and the base pin that passes this base; Described pipe cap is located on the described base, and is tightly connected with this base, it is characterized in that; This pyroelectric infrared sensor also comprises the semiconductor encapsulating structure spare that is arranged on the said base, and this semiconductor package spare comprises:
Conductive metal foil;
FET nude film exclusive disjunction amplifier nude film sticks on the described conductive metal foil, and is electrically connected with this conductive metal foil;
The plastic packaging housing is used to encapsulate described conductive metal foil and FET nude film exclusive disjunction amplifier nude film; This plastic packaging housing has exposed the partially conductive metal forming, and this exposed portions conductive metal foil is used for realizing being electrically connected with said sensitive element and base pin;
Support is used to support said sensitive element;
Wherein, described sensitive element is arranged on the described support; The two ends of this sensitive element and described base pin partly are electrically connected with the pairing conductive metal foil that is exposed respectively.
10. pyroelectric infrared sensor as claimed in claim 9 is characterized in that,
Described base pin comprises the 3rd pin of first pin, second pin and ground connection;
The FET nude film sticks on the described conductive metal foil, and described FET nude film has that gate electrode is drawn pad, source electrode draws pad and drain electrode is drawn pad;
Described conductive metal foil comprises metal forming gate pads, metal forming drain pad, metal forming source pad, is used for the sensitive element first end pad that is electrically connected with an end of said sensitive element, the 3rd pin pad that is used for the sensitive element second end pad that is electrically connected with the other end of said sensitive element, the first pin pad that is used for being electrically connected with first pin, the second pin pad that is used for being electrically connected with second pin and is used for being electrically connected with the 3rd pin; The described first pin pad, the second pin pad and the 3rd pin pad are respectively equipped with first lead hole, second lead hole and the 3rd lead hole that supplies first pin, second pin and the 3rd pin to pass;
Said exposed portions conductive metal foil comprises the sensitive element first end pad, the sensitive element second end pad, the first pin pad, the second pin pad and the 3rd pin pad;
The 3rd pin perforation that described plastic packaging housing is provided with the first pin pad hole of the exposure first pin pad, the second pin pad hole that exposes the second pin pad, the 3rd pin pad hole that exposes the 3rd pin pad, second pin perforation that first pin is bored a hole, confession second pin penetrates that supplies first pin to penetrate and supplies the 3rd pin to penetrate; The first pin pad hole, the second pin pad hole and the 3rd pin pad hole are connected with said first pin perforation, the perforation of second pin and the 3rd pin perforation perforation respectively; The aperture of boring a hole greater than the perforation of first pin, the perforation of second pin and the 3rd pin respectively in the aperture in the first pin pad hole, the second pin pad hole and the 3rd pin pad hole;
Described gate electrode is drawn pad, source electrode and is drawn pad and drain electrode and draw pad and be electrically connected with described metal forming gate pads, metal forming source pad and metal forming drain pad respectively; The metal forming gate pads is electrically connected with the sensitive element first end pad, and the metal forming drain pad is electrically connected with the first pin pad, and the metal forming source pad is electrically connected with the second pin pad, and the sensitive element second end pad is electrically connected with the 3rd pin pad;
The two ends of said sensitive element are electrically connected with sensitive element first end pad and the sensitive element second end pad respectively;
The top of described first pin penetrates the perforation of first pin and first lead hole successively, and is electrically connected with the first pin pad; The top of described second pin penetrates the perforation of second pin and second lead hole successively, and is electrically connected with the second pin pad; The top of described the 3rd pin penetrates perforation of the 3rd pin and the 3rd lead hole successively, and is electrically connected with the 3rd pin pad.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120374988XU CN202284971U (en) | 2011-10-08 | 2011-10-08 | Semiconductor packaging structural part for pyroelectric infrared sensor and sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120374988XU CN202284971U (en) | 2011-10-08 | 2011-10-08 | Semiconductor packaging structural part for pyroelectric infrared sensor and sensor |
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| CN202284971U true CN202284971U (en) | 2012-06-27 |
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| CN201120374988XU Expired - Fee Related CN202284971U (en) | 2011-10-08 | 2011-10-08 | Semiconductor packaging structural part for pyroelectric infrared sensor and sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033268A (en) * | 2011-10-08 | 2013-04-10 | 江苏科融电子技术有限公司 | Semiconductor packaging structural member for pyroelectric infrared sensor (PIR), production method thereof and sensor |
| WO2013049983A1 (en) * | 2011-10-08 | 2013-04-11 | 江苏科融电子技术有限公司 | Semiconductor encapsulation structure for pyroelectric infrared sensor and manufacturing method thereof and sensor |
| CN103413806A (en) * | 2013-08-23 | 2013-11-27 | 电子科技大学 | Pyroelectric sensor packaging structure |
| CN104458007A (en) * | 2014-12-12 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector |
| CN104870953A (en) * | 2012-12-14 | 2015-08-26 | 皇家飞利浦有限公司 | Wrist-worn device for sensing ambient light intensity |
| CN105793679A (en) * | 2013-12-09 | 2016-07-20 | 格立威***有限公司 | Motion detection |
| US10445998B2 (en) | 2016-02-24 | 2019-10-15 | Greenwave Systems Pte. Ltd. | Motion sensor for occupancy detection and intrusion detection |
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- 2011-10-08 CN CN201120374988XU patent/CN202284971U/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033268A (en) * | 2011-10-08 | 2013-04-10 | 江苏科融电子技术有限公司 | Semiconductor packaging structural member for pyroelectric infrared sensor (PIR), production method thereof and sensor |
| WO2013049983A1 (en) * | 2011-10-08 | 2013-04-11 | 江苏科融电子技术有限公司 | Semiconductor encapsulation structure for pyroelectric infrared sensor and manufacturing method thereof and sensor |
| CN103033268B (en) * | 2011-10-08 | 2016-04-27 | 昆山科融电子技术有限公司 | For the semiconductor package part of pyroelectric infrared sensor and manufacture method thereof and sensor |
| CN104870953A (en) * | 2012-12-14 | 2015-08-26 | 皇家飞利浦有限公司 | Wrist-worn device for sensing ambient light intensity |
| US9752930B2 (en) | 2012-12-14 | 2017-09-05 | Koninklijke Philips N.V. | Wrist-worn device for sensing ambient light intensity |
| CN103413806A (en) * | 2013-08-23 | 2013-11-27 | 电子科技大学 | Pyroelectric sensor packaging structure |
| CN105793679A (en) * | 2013-12-09 | 2016-07-20 | 格立威***有限公司 | Motion detection |
| US10055973B2 (en) | 2013-12-09 | 2018-08-21 | Greenwave Systems PTE Ltd. | Infrared detector |
| US10460594B2 (en) | 2013-12-09 | 2019-10-29 | Greenwave Systems Pte. Ltd. | Motion sensor |
| CN104458007A (en) * | 2014-12-12 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector |
| US10739190B2 (en) | 2016-02-03 | 2020-08-11 | Greenwave Systems Pte. Ltd. | Motion sensor using linear array of infrared detectors |
| US10445998B2 (en) | 2016-02-24 | 2019-10-15 | Greenwave Systems Pte. Ltd. | Motion sensor for occupancy detection and intrusion detection |
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Address after: 215325, Suzhou, Jiangsu province Kunshan Zhouzhuang Town Park Road South Patentee after: Jiangsu Kerong Electronic Technology Co., Ltd. Address before: 215325, Suzhou, Jiangsu province Kunshan Zhouzhuang Town Park Road South Patentee before: Jiangsu Kerong Electronic Technology Co.,Ltd. |
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