CN202259357U - Copper-indium-selenium thin-film solar light-transmitting assembly - Google Patents
Copper-indium-selenium thin-film solar light-transmitting assembly Download PDFInfo
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- CN202259357U CN202259357U CN 201120321916 CN201120321916U CN202259357U CN 202259357 U CN202259357 U CN 202259357U CN 201120321916 CN201120321916 CN 201120321916 CN 201120321916 U CN201120321916 U CN 201120321916U CN 202259357 U CN202259357 U CN 202259357U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a copper-indium-selenium thin-film solar light-transmitting assembly, comprising a glass substrate, a glass cover-plate, and a back electrode layer, a thin-film light absorption layer, a buffer layer, an adaptation layer and a front electrode, which are sequentially laminated and packaged between the glass substrate and the glass cover-plate through packaging films, wherein the back electrode layer is arranged on the bottom side of the glass substrate; the thin-film light absorption layer is a copper-indium-selenium compound thin-film layer. The copper-indium-selenium thin-film solar light-transmitting assembly can overcome the higher production cost shortcoming of the crystalline silicon solar cell, and solve the lower stability and lower conversion rate shortcomings of the existing amorphous silicon thin film solar cell. The copper-indium-selenium thin-film solar light-transmitting assembly has advantages of low production cost, good stability, good absorption of solar spectrum and high photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of copper, indium and selenium film solar light-transmitting component, is applied to solar energy power generating and architecture-integral (BIPV) field especially.
Background technology
The raising that Along with people's is pursued comfortable building thermal environments, building and heating and air conditioning energy consumption are growing.In some developed countries, energy for building accounts for 1/3rd of national total energy consumption, so the solar photovoltaic building integrated conception is just arisen at the historic moment under this background.Solar photovoltaic building is integrated to be that solar power system organically combines with building; Different the two kinds of form of expression: BAPV (Building Attached Photovoltaic) are arranged according to what battery component and building combined; Be that solar photovoltaic generation system depends on building; Building roof or vertical plane wall surface fixed installation solar photovoltaic assembly, form the photovoltaic array that covers the existed building surface; BIPV (Building Integrated Photovoltaic), promptly usually said is solar building integrated, is to be applied to architectural as a kind of construction material solar photovoltaic assembly.Be in building and build or the design phase; Just solar photovoltaic generation system is attached in the building and goes; Combine the surfacing as building to solar module and general construction material (for example metallic plate etc.), the common mode of BIPV has photovoltaic roof, photovoltaic curtain wall and photovoltaic daylighting top etc.The utility model is applied to the latter, i.e. BIPV BIPV field.
BIPV such as photovoltaic curtain wall and photovoltaic daylighting top etc. require battery component that natural daylight is had certain light transmittance usually.For lighttight crystal silicon solar energy battery, when making assembly, adopt the double glazing encapsulation, light transmission capacity is adjusted in the space of adjusting simultaneously between the battery sheet; For amorphous silicon thin-film solar cell, mainly contain thin-film solar cells at present, adopt the method for laser grooving and scribing to make it reach certain light transmittance usually; The technology of non-crystal silicon solar energy light-transmitting component is comparatively ripe at home; General technological process is: after the back electrode of battery has deposited, utilize the laser beam of certain wavelength, the dorsum electrode layer of handle component and film light absorbed layer etch away; Expose preceding transparent conductive film, natural daylight just can see through assembly like this.Motion through the control laser head; On battery, produce the translucent construction of channel form structure with rule; The light transmittance of assembly can be adjusted through the live width and the density that change the scored groove structure; The light transmittance of assembly can be near 100% in theory, but considers cost and productive rate, and the light transmittance of assembly is usually between 1% to 20%.
The utility model content
The utility model technical problem to be solved provides a kind of copper, indium and selenium film solar light-transmitting component; Overcome the high shortcoming of crystal silicon solar energy battery cost; Solve existing amorphous silicon thin-film solar cell poor stability and the low shortcoming of transfer ratio, cost is low, good stability, high to solar spectrum good absorbing and electricity conversion.
For solving the problems of the technologies described above; The technical scheme of the utility model is: a kind of copper, indium and selenium film solar light-transmitting component; Comprise substrate of glass, glass cover-plate and stack gradually dorsum electrode layer, film light absorbed layer, resilient coating, adaptation layer, the preceding electrode that is encapsulated between said substrate of glass and the glass cover-plate through encapsulating film; Said dorsum electrode layer is located at said substrate of glass one side; Said film light absorbed layer is a CIS compound film layer, and said encapsulating film is the PVB encapsulating film, and said glass cover-plate is a toughened glass.
As a kind of embodiment preferred, said CIS compound film layer is to constitute by molybdenum layer, copper indium selenium layer, cadmium sulfide layer, intrinsic zinc oxide film and Al-Doped ZnO are folded layer by layer.
Make the processing step of the utility model:
1) sputter dorsum electrode layer on substrate of glass is along substrate of glass long side direction laser grooving and scribing P1 line;
2) sputter copper indium gallium metal preformed layer is with gas generation diffusion reaction film former light absorbing zone;
3) on the film light absorbed layer, deposit resilient coating, along substrate of glass long side direction delineation P2 line;
4) the transparent preceding electrode of sputter;
5) along substrate of glass long side direction delineation P3 line, along substrate of glass short side direction laser grooving and scribing P4 line;
6) sandblast, edging, hole, lay conduction band;
7) lay glass cover-plate;
8) prepare complete light-transmitting component through the lamination encapsulation technology.
Concrete steps are: the P1 delineation is to be inscribed into glass from face, and back electrode is divided into several zones, and the P2 delineation is to be inscribed into the back electrode molybdenum layer from face; Film light absorbed layer and resilient coating are crossed out, and P3 is inscribed into back electrode from face afterwards, and light absorbing zone, resilient coating and preceding electrode are crossed out; Several baby batteries are together in series; Last P4 delineation is that to carry out laser from the glass non-membrane surface anti-reflection, adopts laser in the direction perpendicular to first three step score, laterally marks the groove of certain width to last a slice baby battery from first baby battery; Remove all retes on the substrate of glass, thereby reach the purpose that light sees through assembly.
After having adopted technique scheme, the beneficial effect of the utility model is:
(1) copper, indium and selenium film solar light-transmitting component adopts the method preparation of laser grooving and scribing, with existing copper, indium and selenium film manufacture of solar cells process compatible, only adds one step of laser grooving and scribing at the front-end process end, and manufacture craft is simple;
(2) stepped construction of copper, indium and selenium film solar light-transmitting component, through the width and the density of control laser scoring, the accurate light transmittance of adjusting part is prepared the light-transmitting component of different light transmittances and different capacity easily;
(3) PVB encapsulating film, the glass cover-plate of toughened glass material has reduced the assembly cost, is convenient to promote.
Description of drawings
Fig. 1 is the utility model copper, indium and selenium film solar light-transmitting component structural representation;
Fig. 2 is the transverse sectional view of the utility model copper, indium and selenium film solar light-transmitting component;
Fig. 3 is the longitudinal sectional view of the utility model copper, indium and selenium film solar light-transmitting component;
Among the figure: the 1-substrate of glass; The 2-dorsum electrode layer; 3-film light absorbed layer; The 4-resilient coating; The 5-adaptation layer; Electrode before the 6-; The 7-encapsulating film; The 8-glass cover-plate; The 9-incident light; The 10-transmitted light; The 21-P1 scored groove; The 22-P2 scored groove; The 23-P3 scored groove; The 31-P4 scored groove.
Embodiment
Below in conjunction with accompanying drawing and embodiment, further set forth the utility model.Should be understood that these embodiment only to be used to the utility model is described and be not used in the restriction the utility model scope.Should understand in addition; After the content of having read the utility model instruction; Those skilled in the art can do various changes or modification to the utility model; These equivalent form of values fall within the application's appended claims institute restricted portion equally, and all are from the design of the utility model, and the reconfiguration of having done without creative work all drops within the protection range of the utility model.
A kind of copper, indium and selenium film solar light-transmitting component; As shown in Figure 1; Comprise substrate of glass 1, glass cover-plate 8 and stack gradually dorsum electrode layer 2, film light absorbed layer 3, resilient coating 4, adaptation layer 5, the preceding electrode 6 that is encapsulated between said substrate of glass 1 and the glass cover-plate 8 through encapsulating film 7; Said dorsum electrode layer 2 is located at said substrate of glass 1 side, and said film light absorbed layer 3 is CIS compound film layers.Film light absorbed layer 3 is that copper indium gallium metal preformed layer is behind over cure and selenylation reaction; The CIS compound film layer that generates, CIS compound film layer is by molybdenum layer, copper indium selenium layer, cadmium sulfide layer, intrinsic zinc oxide film and Al-Doped ZnO is range upon range of constitutes; Encapsulating film 7 is PVB encapsulating films, and glass cover-plate 8 is a toughened glass, and incident ray 9 becomes perspective light 10 after seeing through the copper, indium and selenium film solar light-transmitting component.
The utility model copper, indium and selenium film solar light-transmitting component, shown in Fig. 2 and Fig. 3 were common, P1 scored groove 21 was inscribed into substrate of glass 1 from face; Dorsum electrode layer 2 is divided into several zones, and P2 scored groove 22 is to delineate dorsum electrode layer 2 to molybdenum layer from face, and film light absorbed layer 3 and resilient coating 4 are crossed out; P3 scored groove 23 is to be inscribed into dorsum electrode layer 2 from face; Film light absorbed layer 3, resilient coating 4 and preceding electrode layer 6 are crossed out, several baby batteries are together in series, help improving the open circuit voltage of assembly; Improve the power of assembly, wherein P1 scored groove 21, P2 scored groove 22 and P3 scored groove 23 all can not printing opacities.
First three step P1 scored groove 21 of battery production, P2 scored groove 22 and 23 delineations of P3 scored groove are accomplished after the differentiation and series connection of baby battery; Adopt laser in direction, laterally mark the P4 scored groove 31 of certain width, remove all retes on the substrate of glass from first baby battery to last a slice baby battery perpendicular to first three step score; And natural daylight can see through P4 scored groove 31; Thereby reach the purpose that light sees through assembly, wherein will follow the effective ratio of glazed area and cell area, assembly is laterally delineated; The battery bar is cut; Become original a string battery strings and be the multi-string battery string, and realize the parallel connection of multi-string battery string, guarantee the unobstructed of battery circuit through original lead-in wire mode.Through this measure when realizing the assembly printing opacity; Also can effectively alleviate hot spot effect; The heat that the prevents laser battery of burning; The position, size of current, pulse frequency, the rate travel that change laser focusing through adjustment are adjusted the live width of P4 scored groove 31, thereby realize producing the light-transmitting component of different light transmittances and power output.
The copper, indium and selenium film solar light-transmitting component that the utility model disclosed; Overcome the high shortcoming of crystal silicon solar energy battery cost; Solved existing amorphous silicon thin-film solar cell poor stability and the low shortcoming of transfer ratio, cost is low, good stability, high to solar spectrum good absorbing and electricity conversion.
Claims (2)
1. copper, indium and selenium film solar light-transmitting component; It is characterized in that: comprise substrate of glass, glass cover-plate and stack gradually dorsum electrode layer, film light absorbed layer, resilient coating, adaptation layer, the preceding electrode that is encapsulated between said substrate of glass and the glass cover-plate through encapsulating film; Said dorsum electrode layer is located at said substrate of glass one side; Said film light absorbed layer is a CIS compound film layer, and said encapsulating film is the PVB encapsulating film, and said glass cover-plate is a toughened glass.
2. a kind of copper, indium and selenium film solar light-transmitting component as claimed in claim 1 is characterized in that: said CIS compound film layer constitutes by molybdenum layer, copper indium selenium layer, cadmium sulfide layer, intrinsic zinc oxide film and Al-Doped ZnO are folded layer by layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120321916 CN202259357U (en) | 2011-08-30 | 2011-08-30 | Copper-indium-selenium thin-film solar light-transmitting assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120321916 CN202259357U (en) | 2011-08-30 | 2011-08-30 | Copper-indium-selenium thin-film solar light-transmitting assembly |
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| Publication Number | Publication Date |
|---|---|
| CN202259357U true CN202259357U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120321916 Expired - Fee Related CN202259357U (en) | 2011-08-30 | 2011-08-30 | Copper-indium-selenium thin-film solar light-transmitting assembly |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102777000A (en) * | 2012-08-06 | 2012-11-14 | 上海龙人石业装饰有限公司 | CuInxGa(1-x)Se2 (CIGS) solar film attachment surface stone |
| CN104992996A (en) * | 2015-06-30 | 2015-10-21 | 南京汉能薄膜太阳能有限公司 | Double-glass photovoltaic assembly and packaging method thereof |
| CN105070218A (en) * | 2015-09-10 | 2015-11-18 | 上海和辉光电有限公司 | Solar display screen and solar mobile phone |
| CN109065650A (en) * | 2018-09-28 | 2018-12-21 | 北京铂阳顶荣光伏科技有限公司 | Light transmission film method for manufacturing solar battery and light transmission film solar battery |
| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
-
2011
- 2011-08-30 CN CN 201120321916 patent/CN202259357U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102777000A (en) * | 2012-08-06 | 2012-11-14 | 上海龙人石业装饰有限公司 | CuInxGa(1-x)Se2 (CIGS) solar film attachment surface stone |
| CN104992996A (en) * | 2015-06-30 | 2015-10-21 | 南京汉能薄膜太阳能有限公司 | Double-glass photovoltaic assembly and packaging method thereof |
| CN105070218A (en) * | 2015-09-10 | 2015-11-18 | 上海和辉光电有限公司 | Solar display screen and solar mobile phone |
| CN109065650A (en) * | 2018-09-28 | 2018-12-21 | 北京铂阳顶荣光伏科技有限公司 | Light transmission film method for manufacturing solar battery and light transmission film solar battery |
| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20140830 |
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| EXPY | Termination of patent right or utility model |